CN113264500A - Micro-electromechanical device, manufacturing method thereof and electronic equipment - Google Patents
Micro-electromechanical device, manufacturing method thereof and electronic equipment Download PDFInfo
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- CN113264500A CN113264500A CN202110461931.1A CN202110461931A CN113264500A CN 113264500 A CN113264500 A CN 113264500A CN 202110461931 A CN202110461931 A CN 202110461931A CN 113264500 A CN113264500 A CN 113264500A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 32
- 239000000758 substrate Substances 0.000 claims abstract description 92
- 238000000034 method Methods 0.000 claims abstract description 30
- 238000009966 trimming Methods 0.000 claims description 20
- 238000004806 packaging method and process Methods 0.000 claims description 5
- 239000012528 membrane Substances 0.000 claims description 4
- 230000001678 irradiating effect Effects 0.000 claims description 3
- 239000010408 film Substances 0.000 description 10
- 238000005459 micromachining Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 238000002161 passivation Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000011282 treatment Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 238000004873 anchoring Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00865—Multistep processes for the separation of wafers into individual elements
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00865—Multistep processes for the separation of wafers into individual elements
- B81C1/00904—Multistep processes for the separation of wafers into individual elements not provided for in groups B81C1/00873 - B81C1/00896
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- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
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Abstract
Disclosed herein are a micro-electromechanical device, a method of manufacturing the same, and an electronic apparatus. The manufacturing method comprises the following steps: forming a micro-electromechanical unit on a device substrate, wherein the device substrate is laser transparent; performing at least a portion of a subsequent wafer process on the micro-electromechanical unit; laser light is irradiated from the device substrate side to release the micro-electromechanical unit processed by at least a part of the subsequent wafer from the device substrate by selective laser lift-off to form the micro-electromechanical device.
Description
Technical Field
Embodiments disclosed herein relate to the field of micro-electromechanical (MEMS) device technology, and in particular, to a method of manufacturing a MEMS device, and an electronic apparatus.
Background
After forming a cell of a microelectromechanical device on a substrate, the cell is released to form a microelectromechanical device in which the mechanical structure is operable. In general, microelectromechanical devices may be released using surface micromachining or bulk micromachining processes. For example, a micro-electromechanical transducer may have a piezoelectric film. After the piezoelectric thin film of the micro-electromechanical transducer is formed, the piezoelectric thin film may be released from the substrate by a surface micro-machining or bulk micro-machining process. In this way, the piezoelectric film can be mechanically moved based on the applied physical quantity, thereby generating a signal of the micro-electromechanical transducer.
For the production of a large number of microelectromechanical devices, the microelectromechanical devices are usually released in the middle of the wafer process flow. After the release of the micro-electromechanical device, some downstream wafer process flows, such as wafer overlay, wafer level packaging, etc., also need to be performed.
For example, such microelectromechanical devices requiring release may include Bulk Acoustic Wave (BAW) filters/thin Film Bulk Acoustic Resonators (FBARs), Radio Frequency (RF) repeaters/switches, accelerometers, gyroscopes, absolute pressure sensors, microelectromechanical resonators, optical micromirrors, microbolometers, thermopiles, and the like.
Disclosure of Invention
It is an object of the present disclosure to provide a new solution for manufacturing microelectromechanical devices.
According to a first aspect of the present disclosure, there is provided a method of manufacturing a micro-electromechanical device, comprising: forming a micro-electromechanical unit on a device substrate, wherein the device substrate is laser transparent; performing at least a portion of a subsequent wafer process on the micro-electromechanical unit; laser light is irradiated from the device substrate side to release the micro-electromechanical unit processed by at least a part of the subsequent wafer from the device substrate by selective laser lift-off to form the micro-electromechanical device.
According to a second aspect of the present disclosure, there is provided a micro-electromechanical device manufactured using the manufacturing method according to the embodiment.
According to a third aspect of the present disclosure, there is provided an electronic device comprising the microelectromechanical device according to the embodiments.
According to the embodiment of the disclosure, the yield of manufacturing the micro-electromechanical device can be improved.
Other features of the present disclosure and advantages thereof will become apparent from the following detailed description of exemplary embodiments thereof, which proceeds with reference to the accompanying drawings.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of the specification, illustrate embodiments of the disclosure and together with the description, serve to explain the principles of the disclosure.
Fig. 1 shows a schematic flow diagram of a method of manufacturing a microelectromechanical device according to an embodiment of the present disclosure.
Fig. 2-6 schematically illustrate a process of manufacturing a microelectromechanical device according to one embodiment of the present disclosure.
Fig. 7-8 schematically show side views of schematic structures of microelectromechanical devices according to different embodiments of the present disclosure.
Fig. 9-17 show top views schematically illustrating schematic structures of microelectromechanical devices according to different embodiments of the present disclosure.
FIG. 18 shows a schematic diagram of an electronic device according to one embodiment of the present disclosure.
Detailed Description
Various exemplary embodiments of the present disclosure will now be described in detail with reference to the accompanying drawings. It should be noted that: the relative arrangement of the components and steps, the numerical expressions, and numerical values set forth in these embodiments do not limit the scope of the present disclosure unless specifically stated otherwise.
The following description of at least one exemplary embodiment is merely illustrative in nature and is in no way intended to limit the disclosure, its application, or uses.
Techniques, methods, and apparatus known to those of ordinary skill in the relevant art may not be discussed in detail but are intended to be part of the specification where appropriate.
In all examples shown and discussed herein, any particular value should be construed as merely illustrative, and not limiting. Thus, other examples of the exemplary embodiments may have different values.
It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, further discussion thereof is not required in subsequent figures.
Generally, in a wafer process flow of a micro-electromechanical device, after forming a micro-electromechanical unit of the micro-electromechanical device, the micro-electromechanical unit is released to form the micro-electromechanical device. Thereafter, subsequent wafer processing in the wafer process flow, such as wafer overlay, wafer level packaging, etc., is continued. In the case of a microelectromechanical device being executed in a wafer process flow, the released microelectromechanical device becomes relatively fragile after release. Subsequent wafer handling may damage the released microelectromechanical device. In this case, the subsequent wafer processing requires special care in the subsequent wafer process flow. In some cases, some subsequent wafer processing may be limited or even not applicable to the released micro-electromechanical device. This results in, on the one hand, a reduction in the production yield of the microelectromechanical device, and, on the other hand, may also increase the manufacturing costs.
Fig. 1 shows a schematic flow diagram of a method of manufacturing a microelectromechanical device according to an embodiment of the present disclosure.
As shown in fig. 1, at step S12, a microelectromechanical unit is formed on a device substrate, wherein the device substrate is laser transparent.
Here, the device substrate is a substrate that ultimately carries the microelectromechanical unit/device during wafer processing, rather than a production substrate and/or a transfer substrate during semiconductor processing. For example, the device substrate may be a sapphire substrate, a silicon carbide SiC substrate, a quartz substrate, a glass substrate, or the like. These device substrates may achieve high performance and/or may handle high frequency/radio frequency/high power processing.
At step S14, at least a portion of the subsequent wafer processing is performed on the micro-electromechanical unit. Here, the subsequent wafer processing refers to downstream wafer processing after forming the micro-electromechanical unit, for example, wafer covering processing, wafer level packaging processing, and the like. This portion of the subsequent wafer processing may be the portion of the processing that may have a major impact on the released microelectromechanical device.
In step S16, laser light is irradiated from the device substrate side to release the microelectromechanical unit processed by at least a part of the subsequent wafer from the device substrate by selective laser lift-off to form the microelectromechanical device.
Here, after the formation of the microelectromechanical unit, the microelectromechanical unit is released after at least a part of the subsequent wafer processing has been performed. In this way, the effect of subsequent wafer processing on the microelectromechanical device can be relatively reduced. As such, challenges in the manufacturing process may be reduced, production yield may be improved, and/or manufacturing costs may be reduced.
Here, a device substrate is employed which is laser transparent, and after at least a part of the subsequent wafer processing is performed, selective laser lift-off is used from the device substrate side. By this laser selective lift-off, release after subsequent wafer processing is made possible. In this respect, the subsequent wafer handling may be a subsequent wafer handling that affects or hinders and/or renders impossible the release of the microelectromechanical unit.
In one embodiment, the microelectromechanical unit may be released after the complete wafer processing is completed. In this way, the impact of subsequent wafer processing on the microelectromechanical device can be minimized.
The microelectromechanical device herein may include a stress-induced microelectromechanical film. Upon release of the stress-induced microelectromechanical film from the device substrate, the microelectromechanical film bends or deflects, thereby forming a free-standing structure. For example, the microelectromechanical unit may be a microelectromechanical transducer, and the microelectromechanical membrane is a piezoelectric membrane having a bottom electrode. The piezoelectric film can be used for various micro-electromechanical devices such as Bulk Acoustic Wave (BAW) filters and the like. And when the micro-electromechanical unit is formed on the device substrate, the bottom electrode is formed on the device substrate. Thus, the bottom electrode is formed on the device substrate, and the bottom electrode can be released from the device substrate.
Selective laser lift-off may be performed using an excimer laser to separate the microelectromechanical device from the device substrate. When selective laser lift-off is performed, material loss from the underlying layers of the microelectromechanical device is negligible. The region where the release is performed can be selected by selective laser lift-off, so that the release can be performed in a wafer processing process, and a subsequent process such as trimming can also be performed after the release. Selective laser lift-off may be used to irradiate laser light from the device substrate side to trim an underlying layer of the microelectromechanical device adjacent the device substrate. In this way, the microelectromechanical device can be more precisely tuned. Such more precise trimming is advantageous for microelectromechanical devices such as Bulk Acoustic Wave (BAW) filters, microelectromechanical resonators, etc., and may reduce process costs and/or process complexity and/or process steps.
In addition, in the existing wafer process, after the bottom layer of the micro-electromechanical device is trimmed, other wafer process treatments are needed, and the other wafer process treatments can affect the performance of the trimmed micro-electromechanical device. However, in embodiments herein, because the substrate of the microelectromechanical device is modified by the laser-transparent device substrate, the trimmed microelectromechanical device is able to maintain more accurate trimmed performance. In addition, since at least part of the subsequent wafer processing has already been performed prior to trimming the microelectromechanical device, the effect of the subsequent wafer processing on the microelectromechanical device is reduced, at least to some extent. In addition, the subsequent wafer processing can also protect the effect of trimming the micro-electromechanical device to a certain extent.
Typically, the underlayer is selectively laser ablated and/or trimmed to a thickness of 2nm or more and 200nm or less. In this case, selective laser lift-off and/or trimming does not substantially affect the structural performance of the microelectromechanical device, thereby ensuring the performance of the microelectromechanical device.
For example, the microelectromechanical device may be a single crystal piezoelectric device having a bottom electrode formed on an epitaxial growth substrate, such as a high performance radio frequency Bulk Acoustic Wave (BAW) resonator/filter, high performance or high power processing device, which may employ wafer level packaging. Furthermore, the microelectromechanical device may also be a polycrystalline piezoelectric device having a bottom electrode formed on a rigid substrate, and may be, for example, a high-performance on-board application such as chip-on-board COB, flip chip FC, wire bonding device, and the like, which may be applied to the fields of consumer electronics, automobiles, industry, medical treatment, and the like. The micro-electromechanical device may also have any other mechanical/electronic structure, such as the micro-electromechanical transducer described above.
For example, the perimeter of the microelectromechanical film is anchored to the device substrate. In this case, selective laser lift-off is used to release the microelectromechanical film of the microelectromechanical device without affecting the peripheral anchoring portion of the microelectromechanical film.
As indicated above, due to the differences in the processing processes, the microelectromechanical devices manufactured by the manufacturing methods embodied herein have different structures and/or differ in their material properties compared to the microelectromechanical devices of the prior art. For example, subsequent wafer processing has less impact on the released microelectromechanical device and thus on its material properties. In addition, the micro-electromechanical device realized here can have a structure difficult to realize by the surface micro-machining or bulk micro-machining process of the prior art. Accordingly, a microelectromechanical device manufactured by a method according to embodiments herein is also claimed herein.
A process of manufacturing a microelectromechanical device according to one embodiment of the present disclosure is described below with reference to fig. 2-6.
As shown in fig. 2, the microelectromechanical unit is formed on a laser transparent device substrate 21. For example, the device substrate 21 is transparent to ultraviolet light. The microelectromechanical unit comprises a bottom electrode 22, a diaphragm 23, a top electrode 24 and a passivation layer 25. The bottom electrode 22 is adjacent to the device substrate 21. In fig. 2, the bottom electrode 22 is not released from the device substrate 21, i.e., the bottom electrode 22 is bonded to the device substrate 21.
In fig. 2, the microelectromechanical device is wafer level packaged. A cover substrate 26 is provided over the micro-electromechanical devices 22, 23, 24, 25. The cover substrate 26 has a through-substrate via hole 31. Dielectric layer 29 covers the surface and periphery of via hole 31. A placing tray (landingpad)30 is also provided on the cover substrate 26. The cover substrate 26 is bonded to the microelectromechanical device/device substrate 21 by a bonding layer 28.
As shown in fig. 3, the device substrate 21 is irradiated with the laser light 32 from the device substrate 21 side at the selected region 33. Thereby, the micro-electromechanical device is released by selective laser lift-off.
As shown in fig. 4, the bottom layer (bottom electrode) 22 of the micro-electromechanical device adjacent to the device substrate 21 is peeled off from the device substrate 21 by the release process. Under the action of the film stress or stress gradient, the micro-electromechanical device is lifted from the device substrate 21.
As shown in fig. 5, the micro-electromechanical device, in particular the bottom electrode 21, is trimmed by irradiating the device substrate 21 with laser light 34 in selected areas 33. Although the release and trimming of the microelectromechanical device is described separately herein, in some embodiments, the release and trimming processes may be performed in one step using the same laser beam.
Fig. 6 shows the modified microelectromechanical device. As shown in fig. 6, the bottom electrode 21 of the microelectromechanical device is trimmed to a desired thickness.
By selective laser lift-off and/or trimming, the bottom layer of the micro-electromechanical device can be burned to a thickness of 2-200 nm. The burned-off underlying material may also be partially redeposited onto the device substrate during the trimming process.
In the structure shown in fig. 6, the micro-electromechanical device includes a bottom electrode 22, a diaphragm 23, a top electrode 24, and a passivation layer 25. The periphery of the micro-electromechanical device is clamped on the device substrate 21 and the middle of the micro-electromechanical device is raised. In this configuration, the total stress of the various layers of the microelectromechanical device is compressive, or due to the stress gradient, the upper layer is more compressive than the lower layer.
Fig. 7-8 schematically show side views of schematic structures of microelectromechanical devices according to different embodiments of the present disclosure.
In the structure shown in fig. 7, the micro-electromechanical device includes a bottom electrode 42, a diaphragm 43, a top electrode 44, and a passivation layer 45. One end of the micro-electromechanical device is clamped to the device substrate 21 and the other end of the micro-electromechanical device is free. The upper layer (passivation layer 45 and/or top electrode) of the microelectromechanical device is more tensile than the lower layer (bottom electrode 42 and/or diaphragm 43). In this way, the micro-electromechanical device is tilted at its free end.
In the structure shown in fig. 8, the micro-electromechanical device includes a bottom electrode 52, a diaphragm 53, a top electrode 54, and a passivation layer 55. The peripheral portion of the microelectromechanical device is a compliant spring portion that connects the central portion of the microelectromechanical device to an anchor portion on the device substrate 21. The stress gradient in the flexible spring portion causes the micro-electromechanical device to lift up in the middle, like a piston.
Fig. 9-17 show top views schematically illustrating schematic structures of microelectromechanical devices according to different embodiments of the present disclosure.
In fig. 9-17, the blank square portions represent the device substrate, the shaded portions represent the microelectromechanical device, and the portions surrounded by dashed lines represent the areas of laser lift-off and/or trimming.
In fig. 9, a square micro-electromechanical device 612 is formed on a device substrate 611 and laser lift-off/trimming is performed in region 613. The microelectromechanical device 612 thus formed is anchored all around on the device substrate 611 and has a square mechanically movable portion.
In fig. 10, a microelectromechanical device 622 is formed on a device substrate 621 and laser lift-off/trimming is performed at region 623. Two opposing sides of the thus formed microelectromechanical device 622 are anchored to the device substrate 621 and the other two sides are free.
In fig. 11, a microelectromechanical device 632 is formed on a device substrate 631, the microelectromechanical device 632 including two opposing separate portions. Laser lift-off/trimming is performed at area 633. The microelectromechanical device 632 thus formed has two cantilevers.
In fig. 12, a microelectromechanical device 642 is formed on the device substrate 641, the microelectromechanical device 642 including four opposing discrete portions. Laser lift-off/trimming is performed at region 643. The resulting micro-electromechanical device 642 has four cantilevers, each of which is triangular in shape.
In fig. 13, a microelectromechanical device 652 is formed on a device substrate 651, the microelectromechanical device 652 being square. Laser lift-off/trimming is performed at area 653. The microelectromechanical device 652 thus formed is anchored all around on the device substrate 651 and has a mechanically movable portion that is circular in shape.
In fig. 14, a micro-electromechanical device 662 is formed on a device substrate 661, the micro-electromechanical device 662 being circular. Laser lift-off/trimming is performed in region 663. The microelectromechanical device 662 thus formed is anchored all around on the device substrate 661 and has a mechanically movable part in the shape of a ring.
In fig. 15, a micro-electromechanical device 672 is formed on a device substrate 671, the micro-electromechanical device 672 being square. Laser lift-off/trimming is performed at region 673. The microelectromechanical device 672 thus formed is anchored on the device substrate 671 at all sides and has a regular pentagonal mechanically movable portion.
In fig. 16, a microelectromechanical device 682 is formed on a device substrate 681, and laser lift-off/trimming is performed in region 683. The microelectromechanical device 682 thus formed has a spring structure that connects the mechanically movable portion of the middle pentagon with the anchor portion on the device substrate 681.
In fig. 17, a micro-electromechanical device 692 is formed on a device substrate 691, and laser lift-off/trimming is performed at region 693. The microelectromechanical device 692 so formed has a spring structure connecting the intermediate mechanically movable portion and the anchor portion on the device substrate 691. Micro-electromechanical device 692 is similar to a piston structure.
As demonstrated above, the resulting microelectromechanical device has traces of laser burning at the bottom. Furthermore, in the existing manufacturing methods, subsequent wafer processes have an impact on the manufactured microelectromechanical device, whereas the microelectromechanical devices manufactured by the manufacturing methods of microelectromechanical devices disclosed herein are less affected and therefore have different structural and/or material characteristics.
FIG. 18 shows a schematic diagram of an electronic device according to one embodiment. As shown in fig. 18, an electronic device 70 includes a micro-electromechanical device 71 as described herein. The electronic device 70 may be, for example, a smartphone, a tablet computer, or the like. The microelectromechanical device 71 may be, for example, a microelectromechanical microphone, a Bulk Acoustic Wave (BAW) filter/thin Film Bulk Acoustic Resonator (FBAR), a Radio Frequency (RF) relay/switch, an accelerometer, a gyroscope, an absolute pressure sensor, a microelectromechanical resonator, an optical micromirror, a microbolometer, a thermopile, or the like.
Although some specific embodiments of the present disclosure have been described in detail by way of example, it should be understood by those skilled in the art that the foregoing examples are for purposes of illustration only and are not intended to limit the scope of the present disclosure.
Claims (10)
1. A method of manufacturing a microelectromechanical device, comprising:
forming a micro-electromechanical unit on a device substrate, wherein the device substrate is laser transparent;
performing at least a portion of a subsequent wafer process on the micro-electromechanical unit;
laser light is irradiated from the device substrate side to release the micro-electromechanical unit processed by at least a part of the subsequent wafer from the device substrate by selective laser lift-off to form the micro-electromechanical device.
2. Manufacturing method according to claim 1, wherein the microelectromechanical unit is released after the complete wafer processing.
3. The manufacturing method according to claim 1, wherein the subsequent wafer processing comprises a wafer cover processing or a wafer level packaging processing.
4. The manufacturing method according to any one of claims 1-3, wherein the microelectromechanical device includes a stress-induced microelectromechanical film,
wherein irradiating laser from the device substrate side to release the micro-electromechanical unit subjected to the subsequent wafer processing from the device substrate by selective laser lift-off to form the micro-electromechanical device comprises:
the stress-induced microelectromechanical film is released from the device substrate to cause the microelectromechanical film to bend or deflect, thereby forming a free-standing structure.
5. The manufacturing method according to claim 4,
the microelectromechanical unit is a microelectromechanical transducer, and the microelectromechanical membrane is a piezoelectric membrane with a bottom electrode,
wherein forming the microelectromechanical unit on the device substrate includes: the bottom electrode is formed on a device substrate,
wherein irradiating laser from the device substrate side to release the micro-electromechanical unit subjected to the subsequent wafer processing from the device substrate by selective laser lift-off to form the micro-electromechanical device comprises: releasing the bottom electrode from the device substrate.
6. The method of manufacturing of claim 4, wherein a perimeter of the microelectromechanical film is anchored on the device substrate.
7. The manufacturing method according to any one of claims 1 to 3, further comprising:
laser light is irradiated from the device substrate side to trim the underlying layer of the microelectromechanical device adjacent to the device substrate by selective laser lift-off.
8. The manufacturing method according to claim 6, wherein the thickness of the underlayer subjected to selective laser lift-off and/or trimming is 2nm or more and 200nm or less.
9. A micro-electromechanical device manufactured using the manufacturing method according to any one of claims 1 to 8.
10. An electronic device comprising the microelectromechanical device of claim 9.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114143687A (en) * | 2021-11-08 | 2022-03-04 | 歌尔微电子股份有限公司 | Piezoelectric microphone of micro electro mechanical system, manufacturing method thereof and electronic equipment |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114143687A (en) * | 2021-11-08 | 2022-03-04 | 歌尔微电子股份有限公司 | Piezoelectric microphone of micro electro mechanical system, manufacturing method thereof and electronic equipment |
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