CN114141657A - Substrate processing method, storage medium, and substrate processing apparatus - Google Patents

Substrate processing method, storage medium, and substrate processing apparatus Download PDF

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Publication number
CN114141657A
CN114141657A CN202110983823.0A CN202110983823A CN114141657A CN 114141657 A CN114141657 A CN 114141657A CN 202110983823 A CN202110983823 A CN 202110983823A CN 114141657 A CN114141657 A CN 114141657A
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CN
China
Prior art keywords
liquid
substrate
processing
temperature
holding portion
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Pending
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CN202110983823.0A
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Chinese (zh)
Inventor
野田朋宏
武内亮太
加藤宽三
高柳康治
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Publication of CN114141657A publication Critical patent/CN114141657A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C13/00—Means for manipulating or holding work, e.g. for separate articles
    • B05C13/02—Means for manipulating or holding work, e.g. for separate articles for particular articles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C9/00—Apparatus or plant for applying liquid or other fluent material to surfaces by means not covered by any preceding group, or in which the means of applying the liquid or other fluent material is not important
    • B05C9/08—Apparatus or plant for applying liquid or other fluent material to surfaces by means not covered by any preceding group, or in which the means of applying the liquid or other fluent material is not important for applying liquid or other fluent material and performing an auxiliary operation
    • B05C9/14—Apparatus or plant for applying liquid or other fluent material to surfaces by means not covered by any preceding group, or in which the means of applying the liquid or other fluent material is not important for applying liquid or other fluent material and performing an auxiliary operation the auxiliary operation involving heating or cooling
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • B05D3/002—Pretreatement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/3021—Imagewise removal using liquid means from a wafer supported on a rotating chuck
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Coating Apparatus (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)

Abstract

The invention provides a substrate processing method, a storage medium and a substrate processing apparatus, which can restrain the film thickness variation among substrates. The substrate processing method includes the following processes: performing a liquid treatment including supplying a treatment liquid to a surface of the substrate held at the treatment position using a liquid treatment unit that holds the substrate at a predetermined treatment position and supplies the treatment liquid to the surface of the substrate, and holding the substrate so that a coating of the treatment liquid can be formed on the surface of the substrate after supplying the treatment liquid; and performing temperature adjustment processing of adjusting the temperature of a member that affects the temperature of the substrate when performing the liquid processing in the liquid processing unit before the liquid processing.

Description

Substrate processing method, storage medium, and substrate processing apparatus
Technical Field
The present disclosure relates to a substrate processing method, a storage medium, and a substrate processing apparatus.
Background
Patent document 1 discloses a treatment method characterized by imparting a temperature distribution to a target object when a treatment liquid is applied to the target object.
Documents of the prior art
Patent document
Patent document 1: japanese laid-open patent publication No. 5-36597
Disclosure of Invention
Problems to be solved by the invention
The present disclosure provides a substrate processing method, a storage medium, and a substrate processing apparatus capable of suppressing film thickness variation between substrates.
Means for solving the problems
A substrate processing method according to an aspect of the present disclosure includes: performing a liquid treatment including supplying a treatment liquid to a surface of the substrate held at the treatment position using a liquid treatment unit that holds the substrate at a predetermined treatment position and supplies the treatment liquid to the surface of the substrate, and holding the substrate so that a coating film of the treatment liquid can be formed on the surface of the substrate after the treatment liquid is supplied; and performing, before the liquid treatment, temperature adjustment processing for adjusting a temperature of a member that affects a temperature of the substrate when the liquid treatment is performed, in the liquid treatment unit.
ADVANTAGEOUS EFFECTS OF INVENTION
According to the present disclosure, a substrate processing method, a storage medium, and a substrate processing apparatus capable of suppressing variation in film thickness between substrates are provided.
Drawings
Fig. 1 is a perspective view schematically showing an example of a substrate processing system according to a first embodiment.
Fig. 2 is a side view schematically showing an example of the coating and developing apparatus.
FIG. 3 is a schematic view showing an example of the liquid treatment unit.
Fig. 4 is a block diagram showing an example of the hardware configuration of the control device.
Fig. 5 is a flowchart showing an example of a substrate processing method.
Fig. 6 is a flowchart showing an example of the liquid treatment.
Fig. 7 is a flowchart showing an example of temperature adjustment processing.
Fig. 8 is a graph showing an example of the measurement result of the film thickness variation according to the comparative example.
Fig. 9 is a graph showing an example of the measurement result of the film thickness variation according to the first embodiment.
Fig. 10 is a schematic view showing an example of a liquid treatment unit according to the second embodiment.
Fig. 11 is a flowchart showing an example of a substrate processing method.
Fig. 12 is a flowchart showing an example of temperature adjustment processing.
Fig. 13 (a) is a graph showing an example of the measurement result of the film thickness variation according to the comparative example. Fig. 13 (b) and 13 (c) are graphs showing an example of the measurement result of the film thickness variation according to the second embodiment.
Fig. 14 is a schematic diagram showing an example of the liquid treatment unit according to the third embodiment.
Fig. 15 is a flowchart showing an example of a substrate processing method.
Fig. 16 is a flowchart showing an example of the temperature adjustment process.
Fig. 17 is a graph showing an example of a temperature change of the inner cup.
Fig. 18 is a flowchart showing an example of a substrate processing method.
Fig. 19 (a) is a graph showing an example of the measurement result of the film thickness variation according to the comparative example. Fig. 19 (b) is a graph showing an example of the measurement result of the film thickness variation according to the third embodiment.
Description of the reference numerals
2: a coating and developing device; 30: a rotation holding portion; 32: a holding section; 40: a treatment liquid supply unit; 50: a solvent supply section; 60: a gas supply unit; 70: a housing part; 82: an inner cup; 90: a solvent supply section; 100: a control device; u1: a liquid treatment unit; w: a workpiece; wa: a surface; wb: and a back surface.
Detailed Description
Various exemplary embodiments will be described below.
A substrate processing method according to an exemplary embodiment includes: performing a liquid treatment including supplying a treatment liquid to a surface of the substrate held at the treatment position using a liquid treatment unit that holds the substrate at a predetermined treatment position and supplies the treatment liquid to the surface of the substrate, and holding the substrate so that a coating film of the treatment liquid is formed on the surface of the substrate after supplying the treatment liquid; and performing, before the liquid treatment, a temperature adjustment treatment of adjusting a temperature of a member that affects a temperature of the substrate when the liquid treatment is performed, in the liquid treatment unit.
In the liquid treatment with the treatment liquid, a part of the liquid included in the treatment liquid evaporates with the formation of the coating film after the treatment liquid is supplied, and the temperature around the treatment position may be lowered by vaporization heat. Therefore, when the liquid processing is repeated, the temperature conditions around the processing position vary from liquid processing to liquid processing, and the film thickness of the coating film may vary. In contrast, in the substrate processing method, the liquid processing can be performed with the temperature variation around the processing position reduced by the temperature adjustment processing of adjusting the temperature of the member that affects the temperature of the substrate. Therefore, the variation in film thickness between the substrates can be suppressed.
The process conditions in the temperature adjustment process may be set according to the start timing of the liquid process. The temperature around the processing position may vary depending on the start timing of the liquid processing. Therefore, by setting the process conditions for the temperature adjustment process in accordance with the start timing of the liquid process, the ambient temperature at the process position at the start of the liquid process can be appropriately adjusted.
The member may include a holding portion that supports the back surface of the substrate so as to hold the substrate at the processing position. The temperature adjustment process may include cooling the holding part by supplying the first fluid to the holding part. In this case, the holding portion that affects the temperature of the substrate is cooled before the liquid processing, and the degree of decrease in the ambient temperature at the processing position accompanying the execution of the liquid processing is small. Therefore, variation in the temperature around the processing position per liquid processing is reduced, and variation in the film thickness between the substrates can be suppressed.
The supplying of the treatment liquid to the surface of the substrate may include supplying the treatment liquid to the surface of the substrate while rotating the holding portion in a state of supporting the substrate by a rotation holding portion connected to the holding portion. Supplying the first fluid to the holding portion may include supplying the first fluid to a central portion of the holding portion. The central portion of the holding portion is located in the vicinity of the driving portion for rotating the holding portion, and the heat capacity of the central portion tends to be larger than that of the other portions. Therefore, by cooling the central portion of the holding portion, the degree of temperature adjustment by the temperature adjustment process can be increased.
The member may include an inner cup which is a receiving portion disposed in a state of being close to an outer peripheral portion of the back surface of the substrate, among the receiving portions of the substrate held at the processing position, being surrounded. The tempering process may comprise cooling the inner cup by supplying a second fluid to the inner cup. In this case, the inner cup that affects the temperature of the substrate is cooled before the liquid processing, and the degree of decrease in the ambient temperature at the processing position accompanying the execution of the liquid processing is small. Therefore, the variation in the temperature around the processing position per liquid processing is reduced, and thus the variation in the film thickness between the substrates can be suppressed.
Cooling the inner cup by supplying the second fluid to the inner cup may include supplying a solvent to the inner cup, and maintaining a state in which the solvent is not supplied to the inner cup after supplying the solvent. In this case, the inner cup is cooled by the heat of vaporization of the solvent after the supply to the inner cup, and therefore the inner cup can be cooled while the amount of the solvent used is suppressed.
In the substrate processing method, the liquid processing may be started within a predetermined time from the cooling of the inner cup to the target temperature by supplying the second fluid to the inner cup. In this case, the liquid treatment can be started in a state where the ambient temperature at the treatment position is lowered.
The substrate processing method may further include: carrying out a liquid treatment and then carrying out a substrate from a treatment position; and supplying a second fluid to the inner cup during a period from completion of the supply of the processing liquid to the surface of the substrate to start carrying out the substrate from the processing position. In this case, variations in the temperature of the inner cup per liquid treatment can be suppressed.
The member may include a holding portion that supports the back surface of the substrate so as to hold the substrate at the processing position. The supplying of the treatment liquid to the surface of the substrate may include supplying the treatment liquid to the surface of the substrate while rotating the holding portion in a state of supporting the substrate. The temperature adjustment process may include increasing the temperature of the holding portion by rotating the holding portion in a state where the holding portion does not support the substrate. In this case, the temperature of the holding portion that affects the temperature of the substrate is increased before the liquid processing, and the ambient temperature at the processing position can be suppressed from decreasing with the execution of the liquid processing. Therefore, variation in temperature around the processing position per liquid processing can be reduced, and variation in film thickness between substrates can be suppressed.
A storage medium according to an exemplary embodiment is a computer-readable storage medium storing a program for causing an apparatus to execute the substrate processing method described above.
A substrate processing apparatus according to an exemplary embodiment includes: a liquid processing unit configured to supply a processing liquid to a surface of a substrate while holding the substrate at a predetermined processing position; and a control unit that controls the liquid processing unit. The control unit causes the liquid processing unit to execute a liquid process including supplying a processing liquid to a surface of the substrate held at the processing position, and holding the substrate so as to form a coating film of the processing liquid on the surface of the substrate after the supply of the processing liquid. The control unit causes the liquid processing unit to execute a temperature adjustment process in which a temperature of a member that affects a temperature of the substrate when the liquid processing is executed in the liquid processing unit, before the liquid processing. In the substrate processing apparatus, as in the substrate processing method described above, it is possible to suppress variations in film thickness between substrates.
The embodiments are described below with reference to the drawings. In the description, the same elements or elements having the same function are denoted by the same reference numerals, and redundant description thereof is omitted.
[ first embodiment ]
First, a substrate processing system 1 according to a first embodiment will be described with reference to fig. 1 to 7 as an example of a system including a substrate processing apparatus. The substrate processing system 1 shown in fig. 1 is a system for forming a photosensitive film on a workpiece W, exposing the photosensitive film, and developing the photosensitive film. The workpiece W to be processed is, for example, a substrate or a substrate in a state where a film, a circuit, or the like is formed by performing a predetermined process. An example of a substrate included in the workpiece W is a wafer including silicon. The workpiece W (substrate) may be formed in a circular shape. The workpiece W to be processed may be a glass substrate, a mask substrate, an FPD (Flat Panel Display), or the like, or may be an intermediate obtained by subjecting such a substrate or the like to a predetermined process. The photosensitive film is, for example, a resist film.
The substrate processing system 1 includes a coating and developing apparatus 2 and an exposure apparatus 3. The coating and developing apparatus 2 performs a process of applying a resist (chemical solution) to the surface of the workpiece W to form a resist film before the exposure process by the exposure apparatus 3, and the coating and developing apparatus 2 performs a process of developing the resist film after the exposure process. The exposure device 3 is a device that exposes a resist film (photosensitive coating film) formed on a workpiece W (substrate). Specifically, the exposure apparatus 3 irradiates the portion of the resist film to be exposed with an energy ray by a method such as immersion exposure.
Next, the configuration of the coating and developing apparatus 2 as an example of the substrate processing apparatus will be described. As shown in fig. 1 and 2, the coating and developing apparatus 2 includes a carrier block 4, a process block 5, an interface block 6, and a control device 100 (control unit).
The workpiece W is introduced into the coating and developing apparatus 2 from the carrier block 4, and is led out into the carrier block 4 from the coating and developing apparatus 2. For example, the carrier block 4 can support a plurality of carriers C for the workpiece W, and the carrier block 4 incorporates a transport device a1 including a transfer arm. The carrier C accommodates a plurality of circular workpieces W, for example. The transfer device a1 is used to take out the workpiece W from the carrier C, transfer the workpiece W to the processing block 5, receive the workpiece W from the processing block 5, and return the workpiece W to the carrier C. The processing block 5 has processing modules 11, 12, 13, 14.
The processing module 11 includes a liquid processing unit U1, a heat processing unit U2, and a conveyance device A3 for conveying the workpiece W to these units. The process module 11 forms an underlying film on the surface of the workpiece W through the liquid process unit U1 and the heat treatment unit U2. The liquid processing unit U1 applies a processing liquid for forming an underlayer film onto the workpiece W. The heat treatment unit U2 performs various heat treatments to be performed along with the formation of the underlayer film.
The processing module 12 incorporates a liquid processing unit U1, a heat processing unit U2, and a conveyance device A3 that conveys the workpiece W to these units. The process module 12 forms a resist film on the lower layer film through the liquid process unit U1 and the heat process unit U2. The liquid processing unit U1 applies a processing liquid for forming a resist film to the lower layer film to form a coating film of the processing liquid on the surface of the workpiece W. The heat treatment unit U2 performs various heat treatments to be performed along with the formation of the resist film.
The processing module 13 incorporates a liquid processing unit U1, a heat processing unit U2, and a conveyance device A3 that conveys the workpiece W to these units. The process module 13 forms an upper layer film on the resist film through the liquid process unit U1 and the heat process unit U2. The liquid treatment unit U1 applies a treatment liquid for forming an upper layer film onto the resist film. The heat treatment unit U2 performs various heat treatments to be performed along with the formation of the upper layer film.
The processing module 14 incorporates a liquid processing unit U1, a heat processing unit U2, and a conveyance device A3 that conveys the workpiece W to these units. The processing module 14 performs the developing process and the heat treatment to be performed along with the developing process on the resist film subjected to the exposure process by the liquid processing unit U1 and the heat treatment unit U2. The liquid processing unit U1 applies a developer to the surface of the exposed workpiece W, and then washes away the developer with a rinse liquid to perform a resist developing process. The heat treatment unit U2 performs various heat treatments to be performed along with the development treatment. Specific examples of the heat treatment include heat treatment before development (PEB: Post Exposure bakes), heat treatment after development (PB: Post bakes), and the like.
A rack unit U8 is provided on the carrier block 4 side in the process block 5. The rack unit U8 is divided into a plurality of shelves arranged in the up-down direction. A conveyance device a7 including a lift arm is provided in the vicinity of the rack unit U8. The conveyance device a7 moves the workpiece W up and down between the stages of the rack unit U8.
A rack unit U9 is provided on the side of the interface block 6 in the processing block 5. The rack unit U9 is divided into a plurality of shelves arranged in the up-down direction.
The interface block 6 transfers the wafer W to and from the exposure apparatus 3. For example, the interface block 6 incorporates a transfer device A8 including a transfer arm, and the interface block 6 is connected to the exposure device 3. The transfer device A8 transfers the wafer W placed in the rack unit U9 to the exposure device 3. The transfer device A8 receives the wafer W from the exposure device 3 and returns the wafer W to the rack unit U9.
The control device 100 controls the coating and developing device 2 to perform the coating and developing process according to the following procedure, for example. First, the controller 100 controls the transport device a1 to transport the workpiece W in the carrier C to the rack unit U8, and controls the transport device a7 to arrange the workpiece W in the stage for the process modules 11.
Next, the control device 100 controls the conveying device a3 to convey the workpiece W of the rack unit U8 to the liquid processing unit U1 and the heat processing unit U2 in the process module 11. Further, the control device 100 controls the liquid treatment unit U1 and the heat treatment unit U2 to form an underlayer film on the surface of the workpiece W. Thereafter, the controller 100 controls the transfer device A3 to return the work W with the underlying film formed thereon to the rack unit U8, and controls the transfer device a7 to arrange the work W in the layer grid for the process modules 12.
Next, the control device 100 controls the conveying device a3 to convey the workpiece W of the rack unit U8 to the liquid processing unit U1 and the heat processing unit U2 in the process module 12. In addition, the control device 100 controls the liquid treatment unit U1 and the heat treatment unit U2 to form a resist film on the surface of the workpiece W. Thereafter, the controller 100 controls the conveying device A3 to return the workpiece W to the rack unit U8, and controls the conveying device a7 to arrange the workpiece W in a layer lattice for the process modules 13.
Next, the control device 100 controls the conveying device a3 to convey the workpiece W in the rack unit U8 to each unit in the process module 13. Further, the controller 100 controls the liquid treatment unit U1 and the heat treatment unit U2 to form an upper layer film on the resist film of the workpiece W. Thereafter, the control device 100 controls the conveying device a3 to convey the workpiece W to the rack unit U9.
Next, the controller 100 controls the conveying device A8 to send the U9 workpiece W to the exposure device 3. Thereafter, the controller 100 controls the conveying device A8 to receive the workpiece W subjected to the exposure processing from the exposure device 3 and to arrange the workpiece W in the bay for the processing module 14 in the rack unit U9.
Next, the controller 100 controls the conveying device a3 to convey the workpiece W in the rack unit U9 to each unit in the process module 14, and controls the liquid processing unit U1 and the heat treatment unit U2 to perform the developing process of the resist film of the workpiece W. Thereafter, the control device 100 controls the conveying device A3 to return the workpiece W to the rack unit U8, and controls the conveying device a7 and the conveying device a1 to return the workpiece W to the carrier C. Through the above process, the coating and developing process of one workpiece W is completed. The controller 100 causes the coating and developing apparatus 2 to perform the coating and developing process on each of the plurality of works W in the same manner as described above.
Further, the specific configuration of the substrate processing apparatus is not limited to the configuration of the coating and developing apparatus 2 illustrated above. The substrate processing apparatus may be any substrate processing apparatus as long as it includes a liquid processing unit that forms a coating film of the processing liquid and a control device that can control the liquid processing unit.
(liquid treatment Unit)
Next, an example of the liquid processing unit U1 of the process module 12 will be described in detail with reference to fig. 3. The liquid treatment unit U1 holds the workpiece W at a predetermined treatment position and supplies a treatment liquid to the surface Wa of the workpiece W held at the treatment position, thereby performing liquid treatment on the workpiece W. By performing the liquid treatment on the workpiece W, a coating of the treatment liquid is formed on the surface Wa of the workpiece W. The processing position is a position at which the workpiece W as a processing target is held while the liquid processing is performed by the liquid processing unit U1. As shown in fig. 3, the liquid processing unit U1 includes, for example, a rotary holding unit 30 and a processing liquid supply unit 40.
The rotation holding portion 30 rotates the workpiece W while holding the workpiece W at the processing position. The rotation holding portion 30 includes, for example, a holding portion 32 and a rotation driving portion 34. The holding portion 32 supports the back surface of the workpiece W so as to hold the workpiece W at the processing position. The holding portion 32 supports the rear surface Wb of the workpiece W with the front surface Wa of the workpiece W directed upward, and may hold the workpiece W (the rear surface Wb) by, for example, vacuum suction. The holding portion 32 can support the central portion of the rear surface Wb of the workpiece W. The holding portion 32 has, for example, a mounting portion 33 and a shaft 36 supporting the mounting portion 33, and the mounting portion 33 includes a surface (hereinafter referred to as "mounting surface 33 a") for mounting a central portion of the rear surface Wb of the workpiece W. The mounting surface 33a has an area smaller than the area of the back surface Wb of the workpiece W. In one example, the mounting surface 33a is formed in a circular shape, and the radius of the mounting surface 33a is about 1/3 to 1/2 of the radius of the workpiece W. As described above, since the holding portion 32 (the placement surface 33a) is in contact with the back surface Wb of the workpiece W, the temperature of the holding portion 32 affects the temperature of the workpiece W when the liquid processing is performed. That is, the holding portion 32 is a member that affects the temperature of the workpiece W when the liquid processing is performed (hereinafter, referred to as "temperature-affecting member").
The rotation driving portion 34 is connected to the holding portion 32. For example, the rotation driving unit 34 is connected to the mounting unit 33 via a shaft 36. The rotation driving unit 34 rotates the shaft 36 (holding unit 32) around the vertical axis line Ax by a power source such as an electric motor. Thereby, the workpiece W rotates around the axis Ax. The holding portion 32 can hold the workpiece W so that the center of the workpiece W substantially coincides with the axis Ax (rotation center).
The treatment liquid supply unit 40 supplies the treatment liquid to the surface Wa of the workpiece W held by the holding unit 32. The processing liquid is a solution (resist liquid) for forming a resist film. The treatment liquid supply unit 40 includes, for example, a nozzle 42, a tank 44, a valve 46, and a nozzle drive unit 48.
The nozzle 42 ejects the treatment liquid from above the treatment position toward the surface Wa of the workpiece W held by the holding portion 32. The nozzle 42 is connected to the tank 44 via a line 49. The tank 44 stores a processing liquid and supplies the processing liquid to the nozzle 42. Valve 46 is disposed in line 49. The valve 46 is, for example, a pneumatic valve for adjusting the opening degree in the line 49. By controlling the valve 46, it is possible to switch between a state in which the treatment liquid is discharged from the nozzle 42 and a state in which the treatment liquid is not discharged from the nozzle 42. The nozzle drive section 48 adjusts the position of the nozzle 42. The nozzle drive unit 48 moves the nozzle 42 along the surface Wa of the workpiece W by a power source such as a motor.
(control device)
As shown in fig. 2, the control device 100 includes a storage unit 102 and a control unit 104 as functional components. The storage unit 102 stores a program for operating each unit of the coating and developing apparatus 2 including the liquid processing unit U1. The storage unit 102 also stores various data (for example, information on an instruction signal for operating the liquid processing unit U1) and information from sensors and the like provided in each unit. The storage unit 102 is, for example, a semiconductor memory, an optical recording disk, a magnetic recording disk, or an optical magnetic recording disk. The program may be included in an external storage device independent of the storage unit 102 or an intangible medium such as a propagation signal. The program may be installed in the storage unit 102 from another medium, and the storage unit 102 may store the program.
The control unit 104 controls the operations of the respective units of the coating and developing apparatus 2 based on the program read from the storage unit 102. The controller 104 causes the liquid processing unit U1 to perform liquid processing on the workpiece W. The liquid treatment includes supplying the treatment liquid to the surface Wa of the workpiece W held at the treatment position by the holding portion 32, and causing the holding portion 32 to hold the workpiece W so as to form a coating of the treatment liquid on the surface Wa of the workpiece W after the treatment liquid is supplied. For example, when supplying the treatment liquid to the surface Wa, the control unit 104 causes the treatment liquid supply unit 40 to supply the treatment liquid to the surface Wa of the workpiece W while rotating the holding unit 32 supporting the workpiece W by the rotation driving unit 34. When forming a coating film of the processing liquid, the control unit 104 rotates the holding unit 32 (workpiece W) by the rotation driving unit 34 in a state where the supply of the processing liquid is stopped.
The control unit 104 causes the liquid processing unit U1 to execute a temperature adjustment process for adjusting the temperature of a temperature-influencing member that influences the temperature of the workpiece W during the liquid processing, before the liquid processing is performed. When the temperature adjustment process is performed in the liquid processing unit U1, the control unit 104 increases the temperature of the holding unit 32 by, for example, rotating the holding unit 32 in a state where the workpiece W is not supported by the holding unit 32. In this case, the temperature of the holding part 32 after the temperature adjustment process is performed becomes higher than the temperature of the holding part 32 in the case where the temperature adjustment process is not performed. In one example, when the liquid processing is performed on each of the plurality of workpieces W, the control unit 104 causes the liquid processing unit U1 to perform the temperature adjustment processing between one liquid processing and the next liquid processing after the one liquid processing.
The control device 100 is constituted by one or more control computers. For example, the control device 100 has a circuit 120 shown in fig. 4. The circuit 120 includes one or more processors 121, a memory 124, a storage device 126, an input/output port 128, and a timer 132. The storage device 126 has a computer-readable storage medium such as a hard disk. The storage medium stores a program for causing the control device 100 to execute a substrate processing method described later. The storage medium may be a removable medium such as a nonvolatile semiconductor memory, a magnetic disk, and an optical disk. The memory 124 temporarily stores a program loaded from a storage medium of the storage device 126 and an operation result of the processor 122.
The processor 122 executes the above-described programs in cooperation with the memory 124. The input/output port 128 inputs and outputs electrical signals to and from the rotation holding portion 30, the treatment liquid supply portion 40, and the like in accordance with instructions from the processor 122. The timer 132 measures the elapsed time by, for example, counting a fixed period of reference pulses. The hardware configuration of the control device 100 may be constituted by a dedicated logic Circuit or an ASIC (Application Specific Integrated Circuit) obtained by integrating the logic Circuit.
(method of treating substrate)
Next, as an example of the substrate processing method, a series of processes including the liquid process and the temperature adjustment process performed in the liquid process unit U1 of the process module 12 will be described with reference to fig. 5 to 7. Fig. 5 is a flowchart showing a series of processes sequentially performed on a plurality of workpieces W in one liquid processing unit U1.
First, the controller 104 of the control device 100 controls the conveyance device a3 and the liquid processing unit U1 to convey the workpiece W to be processed into the liquid processing unit U1 (step S01). For example, the controller 104 controls the conveying device a3 and the liquid processing unit U1 such that the workpiece W to be processed is placed on the holding unit 32 of the rotary holding unit 30, and the controller 104 causes the holding unit 32 to hold the workpiece W at the processing position. This completes the carrying of the workpiece W into the processing position in the liquid processing unit U1. The temperature of the workpiece W to be processed can be adjusted to a predetermined set temperature by a temperature adjusting unit provided in the coating and developing apparatus 2 before (immediately before) the workpiece W to be processed is carried into the liquid processing unit U1.
Next, the controller 104 controls the liquid processing unit U1 to perform liquid processing on the workpiece W held at the processing position by the holding unit 32 (step S02). The temperature in the liquid processing unit U1 (the temperature around the processing position) may be adjusted so as to approach the set temperature at the time point when the liquid processing of the first workpiece W is started. Specific examples of the liquid treatment will be described later. Further, the temperature adjustment may be continued during the liquid treatment so that the temperature in the liquid treatment unit U1 does not (excessively) deviate from the set temperature.
Next, the controller 104 controls the conveying device a3 and the liquid processing unit U1 to carry the workpiece W after the liquid processing out of the liquid processing unit U1 (step S03). For example, the controller 104 controls the liquid processing unit U1 and the weaving carrier A3 to transfer the liquid-processed workpiece W from the holding portion 32 to the carrier A3 when the suction of the workpiece W by the holding portion 32 is released. This completes the carrying out of the workpiece W from the processing position in the liquid processing unit U1.
Next, the control unit 104 determines whether or not the processing of the predetermined set number of workpieces W is completed (step S04). If it is determined in step 04 that the processing of the set number of workpieces W has not been completed (no in step S04), the control unit 104 causes the liquid processing unit U1 to execute the temperature adjustment processing described above (step S05). For example, the control unit 104 rotates the holding unit 32, which is not holding the workpiece W, by the rotation driving unit 34 to increase the temperature of the holding unit 32. In one example, the control unit 104 rotates the holding unit 32 by the rotation driving unit 34 so that the temperature of the holding unit 32 approaches the target temperature. Specific examples of the temperature control treatment will be described later. After step S05 ends, control unit 104 executes the processing of steps S01 to S04 again.
On the other hand, when it is determined in step S04 that the processing for the set number of workpieces W is completed (step S04: yes), the control unit 104 ends the series of processing. In the above series of processes, the processes of steps S01 to S05 are repeated until the set number of workpieces W are processed. In this case, the temperature adjustment process of step S05 is performed after the liquid treatment is performed on one workpiece W and before the liquid treatment is performed on the subsequent workpiece W that is processed subsequent to the one workpiece W. In this example, the temperature adjustment process of step S05 is not performed before the liquid treatment is performed on the first workpiece W, but the control unit 104 may cause the liquid treatment unit U1 to perform the temperature adjustment process of step 05 before the liquid treatment is performed on the first workpiece W. Further, the controller 104 may cause the liquid processing unit U1 to perform the temperature adjustment processing in step S05 after performing the liquid processing on the last workpiece W, and then end the series of processing described above.
Fig. 6 is a flowchart showing an example of the liquid processing in step S02. In the liquid processing at step S02, first, the controller 104 controls the rotary holding unit 30 to start rotating the holding unit 32 holding the workpiece W carried into the processing position (step S11). For example, the control unit 104 controls the rotation holding unit 30 to rotate the workpiece W around the axis line Ax at a predetermined first rotation speed.
Next, the control unit 104 controls the treatment liquid supply unit 40 to start supplying the treatment liquid to the surface Wa of the workpiece W (step S12). For example, the controller 104 controls the nozzle driver 48 to place the nozzle 42 of the treatment liquid supplier 40 at a position facing the center of the workpiece W, and in this case, switches the valve 46 from the closed state to the open state. Thereby, the treatment liquid starts to be discharged from the nozzle 42 toward the center (rotation center) of the workpiece W rotated by the rotation holding portion 30.
Next, the control unit 104 waits until a predetermined supply time elapses after the start of the supply of the processing liquid (step S13). The supply period set to a degree that the treatment liquid can spread on the surface Wa of the workpiece W and the first rotation speed are stored in the storage unit 102. Next, the control unit 104 controls the treatment liquid supply unit 40 to stop supplying the treatment liquid to the surface Wa of the workpiece W (step S14). For example, the control unit 104 switches the valve 46 from the open state to the closed state to stop the discharge of the treatment liquid from the nozzle 42.
Next, the control unit 104 controls the rotation holding unit 30 to adjust the rotation speed of the workpiece W (step S15). For example, the control unit 104 controls the rotation holding unit 30 to decelerate the rotation of the workpiece W from the first rotation speed to the second rotation speed. The second rotation speed is predetermined to a value lower than the first rotation speed.
Next, the controller 104 waits until a predetermined drying time elapses after the rotation of the workpiece W is adjusted to the second rotation speed in step S15 (step S16). The drying time and the second rotation speed are stored in the storage unit 102, and are set to a level at which a coating film (coating film) of the treatment liquid is formed on the surface Wa of the workpiece W. Next, the control unit 104 controls the rotation holding unit 30 to stop the rotation of the workpiece W (step S17). Through the above process, the liquid treatment of one workpiece W is finished. In this liquid treatment, the control unit 104 holds the workpiece W so as to form a coating film of the treatment liquid on the surface Wa of the workpiece W by rotating the workpiece W at the second rotation speed for the drying time by the rotation holding unit 30. The liquid (solvent) contained in the treatment liquid supplied onto the surface Wa of the workpiece W evaporates, thereby forming a coating film of the treatment liquid. The temperature around the processing position (the temperature of the temperature-influencing member such as the holding portion 32) is lower than the set temperature due to vaporization heat generated by evaporation of the solvent in the processing liquid. Therefore, the temperature adjustment process of step S05 is performed.
Fig. 7 is a flowchart showing an example of the temperature adjustment process in step S05. In the temperature adjustment process of step S05, first, the control unit 104 controls the rotation holding unit 30 to start rotating the holding unit 32 that is not holding the workpiece W (step S21). For example, the control unit 104 controls the rotation holding unit 30 to rotate the holding unit 32 at the third rotation speed.
Next, the control unit 104 waits until the idle time elapses after the workpiece W starts rotating at the third rotational speed (step S22). Next, the control unit 104 controls the rotation holding unit 30 to stop the rotation of the holding unit 32 (step S23). This completes the first temperature control process. The idling time and the third rotational speed may be predetermined and may be stored in the storage unit 102. In this case, the idling time and the third rotation speed may be set so that the temperature of the holding portion 32 approaches the target temperature (approaches the target range). The third rotation speed may be higher than the second rotation speed when the coating film of the treatment liquid is formed, or may be higher than the first rotation speed when the treatment liquid is supplied (discharged).
The control unit 104 may set the process conditions in the temperature adjustment process according to the start timing of the liquid process performed subsequent to the temperature adjustment process. The processing conditions include the idling time and the third rotational speed, and the processing conditions are used to define the operation of the liquid processing unit U1 when the temperature adjustment process is performed. That is, the control unit 104 causes the liquid processing unit U1 to perform the temperature adjustment process according to the process conditions. The storage unit 102 may store information associating the idling time and the third rotation speed with the temperature rise of the holding unit 32, and the target temperature of the holding unit 32. The control unit 104 can set the processing conditions such that the temperature of the holding unit 32 approaches the target temperature, based on the time (hereinafter, referred to as "processing waiting time") between the start timing of the temperature adjustment processing and the start timing of the liquid processing performed subsequent to the temperature adjustment processing (the transfer timing of the workpiece W to which the next liquid processing is performed). In this case, control unit 104 may determine the third rotational speed after determining the idle time based on the processing wait time. The third rotation speed may be determined to be a value larger than the second rotation speed when the coating film of the treatment liquid is formed, or may be determined to be a value larger than the first rotation speed when the treatment liquid is supplied (discharged). The control unit 104 may acquire information on the start timing of the next liquid processing (the carrying-in timing of the next workpiece W) before the temperature adjustment processing is started, based on the state of the workpiece W to be processed before the liquid processing, and the like.
The above-described series of processes including the liquid treatment and the temperature adjustment treatment is an example, and can be appropriately changed. For example, a part of the above-described steps (processing) may be omitted, or the steps may be performed in another order. In addition, any two or more of the above-described steps may be combined, or a part of the steps may be modified or deleted. Alternatively, other steps may be performed in addition to the above-described steps. In the above example, the liquid processing is performed on each of the workpieces W one by one, and the temperature adjustment processing in step S05 is performed, but the liquid processing may be performed on each of the workpieces W a plurality of times, and the temperature adjustment processing may be performed once.
(Effect of the first embodiment)
The substrate processing method according to the first embodiment includes the steps of: performing a liquid treatment including supplying a treatment liquid to the surface Wa of the workpiece W held at a treatment position using a liquid treatment unit U1 that holds the workpiece W at a predetermined treatment position and supplies the treatment liquid to the surface Wa of the workpiece W, and holding the workpiece W so as to form a coating film of the treatment liquid on the surface Wa of the workpiece W after supplying the treatment liquid; and temperature adjustment processing of adjusting the temperature of the temperature-influencing member that influences the temperature of the workpiece W at the time of performing the liquid processing in the liquid processing unit U1 is performed before the liquid processing.
In the liquid treatment using the treatment liquid, a part of the liquid contained in the treatment liquid is evaporated with the formation of the coating film after the treatment liquid is supplied, and the temperature around the treatment position may be lowered by vaporization heat. Therefore, when the liquid processing is repeated, the temperature conditions around the processing position vary every time the liquid processing is performed, and the film thickness of the coating film may vary. In contrast, in the substrate processing method, the liquid processing can be performed with the temperature variation around the processing position reduced by the temperature adjustment processing of adjusting the temperature of the member that affects the temperature of the workpiece W. Therefore, the film thickness variation between the works W can be suppressed.
In the substrate processing method, the processing conditions for the temperature adjustment process are set according to the start timing of the liquid process. The temperature around the processing position may vary depending on the start timing of the liquid processing. Therefore, by setting the process conditions for the temperature adjustment process in accordance with the start timing of the liquid process, the ambient temperature at the process position at the start of the liquid process can be appropriately adjusted.
As an example of the temperature-influencing member, a holding portion 32 that supports the rear surface Wb of the workpiece W so as to hold the workpiece W at the processing position can be cited. In the substrate processing method, supplying the processing liquid to the front surface Wa of the workpiece W includes supplying the processing liquid to the front surface Wa of the workpiece W while rotating the holding portion 32 in a state of supporting the workpiece W. The temperature adjustment process includes increasing the temperature of the holding portion 32 by rotating the holding portion 32 in a state where the holding portion 32 does not support the workpiece W. In this case, the temperature of the holding portion 32 that affects the temperature of the workpiece W is increased before the liquid processing, and the ambient temperature at the processing position can be suppressed from decreasing with the execution of the liquid processing. Therefore, variations in the temperature around the processing position per liquid processing can be reduced, and thus variations in the film thickness among the workpieces W can be suppressed.
Here, the effects of the substrate processing method according to the first embodiment will be further described with reference to fig. 8 and 9. Fig. 8 shows the measurement result of the thickness (film thickness) of the coating film according to the comparative example in the case where the temperature adjustment process of step S05 is not performed. In the measurement of the film thickness according to the comparative example, the liquid treatment was continuously performed on five workpieces W, and the film thickness of the central portion of the coating film of the treatment liquid on the surface Wa of the workpiece W was measured. The center portion of the coating film to be measured corresponds to a portion where the workpiece W contacts the holding portion 32 (mounting surface 33a), and the film thicknesses at a plurality of portions in the center portion of the coating film are measured, and an average value is calculated as the film thickness at the center portion. In fig. 8, the vertical axis represents the measured value of the film thickness at the center of the coating film, and the horizontal axis "wafer No" represents the workpiece W that is the second few workpieces W of five workpieces that have been subjected to liquid treatment in sequence. In fig. 8, the circular marks indicate the measured values (average values) of the film thickness, and the broken lines indicate approximate straight lines calculated based on the measured values of the film thickness.
From the measurement results of fig. 8, it is understood that the film thickness at the center portion is decreased as the number of liquid treatments increases. The reason why the variation (decrease) in the film thickness occurs is considered to be: the temperature around the treatment site is lowered by vaporization heat generated when the solvent in the treatment liquid evaporates during the heat treatment. In the primary liquid treatment, when the workpiece W is rotated after the treatment liquid is supplied to form a coating film, the evaporation of the solvent in the treatment liquid progresses in the early stage of the period for forming the coating film, and therefore the temperature around the treatment position is lowered from the set temperature. In addition, at a later stage of the period of forming the coating film, the solvent hardly evaporates, and the temperature around the processing position gradually increases toward the set temperature. After the liquid treatment is completed (after the treatment liquid is supplied), the workpiece W may be carried out before the temperature around the treatment position is increased to the set temperature, and the next liquid treatment may be performed. In this case, the temperature around the processing position in the next liquid processing is lower than the temperature around the processing position in the previous liquid processing, and the thickness of the formed coating film varies. In contrast, in the substrate processing method according to the first embodiment, by increasing the temperature of the holding portion 32 before the liquid processing, it is possible to suppress a decrease in the temperature around the processing position, and as a result, it is possible to suppress a variation in the film thickness between the workpieces W.
The degree of film thickness variation between the works W can be represented by the slope of the approximate straight line in the measurement results shown in fig. 8. Fig. 9 shows measurement results of film thickness variations when the temperature adjustment process of step S05 is performed before the liquid processing is performed on each of the second to fifth workpieces W among the five workpieces W. In fig. 9, the vertical axis represents the slope of an approximate line (change in film thickness per workpiece W) based on the measurement results obtained for the film thicknesses at the central portions of the films of five workpieces W, and the horizontal axis represents the rotation time of the holding portion 32 in a state where no workpiece W is held. In the measurement of the film thickness variation in fig. 9, the rotation speed and the rotation time are changed in three stages. In fig. 9, "ω 1", "ω 2", and "ω 3" represent the rotation speed (rpm), and the values are from large to small in the order of ω 3, ω 2, and ω 1. The rotation time is changed in three stages of Rt1 (sec), 2 × Rt1 (sec), and 3 × Rt1 (sec). The measurement value Ft0 when the rotation time is zero shows the measurement result of the film thickness variation (the slope of the approximate straight line) in the comparative example. Note that the measurement results in the case where the rotation time is 2 × Rt1 (sec) and the rotation speed is ω 2 are not included in the measurement results in fig. 9.
The broken line, the one-dot chain line, and the two-dot chain line shown in fig. 9 indicate approximate straight lines calculated based on a plurality of measurement values of film thickness variation obtained for each rotation speed. As is clear from the measurement results in fig. 9, the film thickness variation is reduced when the temperature adjustment process of step S05 is performed, as compared with the measurement value Ft0 showing the film thickness variation according to the comparative example. It is also understood that in the range of variation in the rotation time in the measurement results of fig. 9, the value of the film thickness variation further decreases as the rotation time increases at any number of rotations. Further, as can be seen from a comparison of the approximate straight lines obtained for each rotation speed, in the variation range of the rotation speed in the measurement result of fig. 9, the larger the rotation speed, the larger the slope (absolute value) of the approximate straight line, and the further the value of the film thickness variation decreases with the rotation time. As described above, in the liquid processing performed successively, the temperature of the holding portion 32 (the temperature around the processing position) is increased by the rotation of the holding portion 32, and thus, the variation in the film thickness in the central portion between the works W can be suppressed.
[ second embodiment ]
In the temperature adjustment process according to the first embodiment, the temperature is adjusted so as to increase the temperature of the holding portion 32, but the temperature adjustment process may be performed so as to decrease the temperature of the holding portion 32 in order to reduce the variation in film thickness between the liquid processes of the workpieces W. The coating and developing apparatus 2 (process module 12) of the substrate processing system according to the second embodiment includes a liquid process unit U10 instead of the liquid process unit U1. Fig. 10 shows a liquid treatment unit U10 according to a second embodiment. As shown in fig. 10, the liquid processing unit U10 includes, for example, a rotary holding unit 30A, a processing liquid supply unit 40, a solvent supply unit 50, and a gas supply unit 60.
The rotation holding portion 30A further has an umbrella portion 38, which is different from the rotation holding portion 30. The umbrella portion 38 prevents the liquid from flowing to the rotation driving portion 34 via the bottom surface of the mounting portion 33 of the holding portion 32 and the side surface of the shaft 36. The umbrella portion 38 is formed in a ring shape so as to surround the shaft 36, and the umbrella portion 38 includes an inclined surface that extends vertically downward from the axis Ax to the outside. The outer edge of the inclined surface is located further outside than the rotation driving portion 34. This prevents the liquid from flowing through the bottom surface of the placement portion 33, the side surface of the shaft 36, and the inclined surface of the umbrella portion 38 and flowing into the motor of the rotation driving portion 34.
The liquid treatment unit U10 according to the second embodiment cools the holder 32 by supplying a fluid to the holder 32 through the solvent supply unit 50 and the gas supply unit 60. The fluid (hereinafter referred to as "first fluid") supplied to the holding portion 32 may be either a solvent (liquid) or a gas, and may be any type of solvent or gas as long as the holding portion 32 can be cooled.
The solvent supply unit 50 supplies a solvent (hereinafter referred to as a "cooling solvent") capable of cooling the holding unit 32 to the holding unit 32. The cooling solvent includes, for example, a diluent. The solvent supply unit 50 may supply the cooling solvent to the central portion of the holding unit 32. The central portion of the holding portion 32 is a portion located at the center with respect to the axis Ax. For example, the center of the holding portion 32 corresponds to a portion of the shaft 36 and the placement portion 33 having a center with a radius about 2 times the radius of the shaft 36. The solvent supply section 50 includes, for example, a nozzle 52, a tank 54, and a valve 56.
The nozzle 52 is disposed below the holding portion 32, and discharges the cooling solvent toward the holding portion 32 (e.g., the bottom surface of the placement portion 33). The nozzle 52 is arranged to supply the cooling solvent to the holding portion 32 so as not to come into contact with the back surface Wb of the workpiece W held by the holding portion 32. The nozzle 52 may be configured to eject the cooling solvent toward the center portion of the holding portion 32. For example, the ejection direction of the cooling solvent from the nozzle 52 intersects the axis Ax inside the holding portion 32. Nozzle 52 is connected to tank 54 via line 58. The tank 54 stores a cooling solvent and supplies the cooling solvent toward the nozzle 52. Valve 56 is disposed in line 58. The valve 56 is, for example, a pneumatic valve for adjusting the opening degree in the line 58. By controlling the valve 56, it is possible to switch between a state in which the cooling solvent is discharged from the nozzle 52 and a state in which the cooling solvent is not discharged from the nozzle 52.
The gas supply unit 60 supplies gas (hereinafter, referred to as "cooling gas") capable of cooling the holding unit 32 to the holding unit 32. The cooling gas includes, for example, nitrogen gas. The gas supply unit 60 may supply the cooling gas to the central portion of the holding unit 32. The gas supply section 60 includes, for example, a nozzle 62, a gas source 64, and a valve 66.
The nozzle 62 is disposed below the holding portion 32, and discharges the cooling gas toward the holding portion 32 (e.g., the bottom surface of the holding portion 32). The nozzle 62 may be configured to eject the cooling gas toward the center portion of the holding portion 32. For example, the ejection direction of the cooling gas from the nozzle 62 intersects the axis Ax inside the holding portion 32. Nozzle 62 is connected to gas source 64 via line 68. The gas source 64 supplies cooling gas toward the nozzle 62. Valve 66 is disposed in line 68. The valve 66 is, for example, a pneumatic valve for adjusting the opening degree in the line 68. The control line 68 can switch between a state in which the cooling gas is discharged from the nozzle 62 and a state in which the cooling gas is not discharged from the nozzle 62.
The liquid treatment unit U10 is also controlled by the control device 100, as in the liquid treatment unit U1 according to the first embodiment. The control unit 104 of the control device 100 causes the liquid processing unit U10 to execute a temperature adjustment process for adjusting the temperature of the holding unit 32 that affects the temperature of the workpiece W when the liquid processing is executed. When the temperature adjustment process is executed, the control unit 104 lowers the temperature of the holding unit 32 (cools the holding unit 32) by supplying the first fluid (the cooling solvent and the cooling gas) to the holding unit 32 through the solvent supply unit 50 and the gas supply unit 60, for example. In this case, the temperature of the holding part 32 after the temperature adjustment process is performed becomes lower than the temperature of the holding part 32 in the case where the temperature adjustment process is not performed. In one example, when the liquid processing is performed on each of the plurality of workpieces W, the control unit 104 causes the liquid processing unit U10 to perform the temperature adjustment processing once before the liquid processing is performed on the plurality of workpieces W a plurality of times.
Next, an example of a series of processes including the liquid process and the temperature control process performed by the liquid process unit U10 according to the second embodiment will be described with reference to fig. 11 and 12. Fig. 11 is a flowchart showing a series of processes sequentially performed on a plurality of workpieces W in one liquid processing unit U10. The temperature in the liquid treatment unit U10 (the temperature around the treatment position) may be adjusted to a predetermined set temperature before the series of treatments.
The controller 104 of the control device 100 first causes the liquid treatment unit U10 to perform a temperature control process for cooling the holder 32 (step S31). For example, the control unit 104 controls the liquid processing unit U10 to cool the holding portion 32 by supplying the first fluid to the holding portion 32. In one example, the control unit 104 supplies the cooling solvent and the cooling gas to the holding unit 32 through the solvent supply unit 50 and the gas supply unit 60 so that the temperature of the holding unit 32 approaches the target temperature. The target temperature of the holding portion 32 is set in advance to a value lower than the set temperature. A specific example of the temperature adjustment processing in step S31 will be described later.
Next, the controller 104 controls the conveying device a3 and the liquid processing unit U10 to convey the first workpiece W to be processed into the liquid processing unit U10 (step S32). For example, step S32 is performed in the same manner as step S01 shown in fig. 5. The temperature of the workpiece W to be processed can be adjusted to a predetermined set temperature by a temperature adjusting unit provided in the coating and developing apparatus 2 before the workpiece W to be processed is carried into the liquid processing unit U10.
Next, the controller 104 controls the liquid processing unit U10 to perform liquid processing on the workpiece W held at the processing position by the holding unit 32 (step S33). For example, step S32 is performed in the same manner as step S02 shown in fig. 5 and 6.
Next, the controller 104 controls the conveying device a3 and the liquid processing unit U10 to carry the workpiece W after the liquid processing out of the liquid processing unit U10 (step S34). For example, step S34 is performed in the same manner as step S03 shown in fig. 5. Next, the control unit 104 determines whether or not the processing of the predetermined set number of workpieces W is completed (step S35). If it is determined in step S35 that the processing of the set number of workpieces W has not been completed (no in step S35), the control unit 104 repeats the processing of steps S32 to S35.
On the other hand, when it is determined in step S35 that the processing of the set number of workpieces W is completed (step S35: "yes"), the control unit 104 ends a series of processing including liquid processing and temperature adjustment processing performed on the set number of workpieces W. As described above, unlike the first embodiment, the temperature control process (cooling of the holding portion 32) of step S31 is performed before the liquid processing of the plurality of workpieces W is performed.
Fig. 12 is a flowchart showing an example of the temperature adjustment process in step S31. In the temperature adjustment process of step S31, first, the controller 104 controls the rotation holding unit 30 to start rotating the holding unit 32 in a state where the workpiece W is not held (step S41). For example, the control unit 104 controls the rotation holding unit 30 to rotate the holding unit 32 at a predetermined fourth rotation speed. The fourth rotation speed may be a rotation speed that is substantially equal to the first rotation speed at the time of supply (discharge) of the processing liquid included in the liquid processing at step S33, or a rotation speed that is lower than the first rotation speed. The fourth rotation speed may be substantially equal to or lower than the second rotation speed in the film formation of the treatment liquid included in the liquid treatment in step S33.
Next, the controller 104 controls the liquid treatment unit U10 to start supplying the first fluid to the holder 32 (step S42). For example, the controller 104 causes the solvent supplier 50 to start spraying the cooling solvent included in the first fluid toward the holder 32, and causes the gas supplier 60 to start spraying the cooling gas included in the first fluid toward the holder 32. In one example, the controller 104 switches the valve 56 of the solvent supplier 50 from the closed state to the open state and switches the valve 66 of the gas supplier 60 from the closed state to the open state, thereby causing the solvent supplier 50 and the gas supplier 60 to start to eject the cooling solvent and the cooling gas, respectively.
Next, the control unit 104 waits until a predetermined supply time elapses from the start of the supply of the first fluid (step S43). The supply time is set to a degree that cooling of the holding portion 32 progresses by supplying the first fluid, and is set to, for example, several seconds or several tens of seconds.
Next, the controller 104 controls the liquid processing unit U10 to stop the supply of the first fluid to the holder 32 (step S44). For example, the controller 104 switches the valve 56 from the open state to the closed state and switches the valve 66 from the open state to the closed state, thereby stopping the ejection of the cooling solvent and the cooling gas from the solvent supplier 50 and the gas supplier 60, respectively. In the above process of supplying the first fluid to the holding portion 32, the cooling solvent from the nozzle 52 of the solvent supply portion 50 may be discharged toward the central portion of the holding portion 32, and the cooling gas from the nozzle 62 of the gas supply portion 60 may be discharged toward the central portion of the holding portion 32.
Next, the control unit 104 waits until a predetermined cooling time elapses after the supply of the first fluid is stopped (step S45). The cooling time is set to a degree that the cooling solvent supplied to the holding portion 32 is sufficiently evaporated (dried), and is set to, for example, several seconds or several tens of seconds. The cooling time may be equal to or shorter than the supply time in step S43, or may be longer than the supply time. During the cooling period from the stop of the supply of the first fluid to the elapse of the cooling time, the cooling of the holding portion 32 is further advanced by the vaporization heat generated along with the evaporation of the cooling solvent.
Next, the control unit 104 determines whether or not the supply of the first fluid has been completed a predetermined set number of times (step S46). If it is determined in step S46 that the set number of times of supply has not been completed (no in step S46), control unit 104 repeats steps S42 to S46. The set number of times indicates the number of times the cooling process including the supply of the first fluid and the cooling period after the supply is repeated, and is set to a degree that the temperature of the holding portion 32 can be cooled to the target temperature. The cooling process may be performed a plurality of times or may be performed once (step S46 may be omitted).
On the other hand, when determining in step S46 that the set number of times of supply has been completed (step S46: "YES"), control unit 104 controls rotation holding unit 30 to stop rotation of holding unit 32 (step S47). Through the above process, the temperature adjustment process of step S31 for cooling the holding portion 32 is completed. As described above, the process conditions for the temperature adjustment process in step S31 may be set in advance. The process conditions of the temperature control process include a supply time for supplying the first fluid, a cooling time for waiting after supplying the first fluid, the number of times of setting, and a start timing of the temperature control process.
Unlike the above example, the control unit 104 may set at least a part of the process conditions in the temperature adjustment process of step S31 in accordance with the start timing of the first liquid process of step S32 performed subsequent to the temperature adjustment process. For example, the control unit 104 may determine the start timing of the temperature adjustment process based on the start timing of the first liquid process in step S32, or may determine at least a part of the process conditions other than the start timing. In one example, the control unit 104 may determine the start timing of the temperature adjustment process in step S32 so that the temperature of the holding unit 32 approaches the target temperature (is included in the target range) based on the start timing of the first liquid process in step S32. The control unit 104 may acquire information on the start timing of the liquid treatment of the workpiece W (the carrying-in timing of the workpiece W) before the temperature adjustment treatment is started, based on the state of the first workpiece W before the liquid treatment, and the like.
Alternatively, when the start timing of the temperature adjustment process is already determined, the control unit 104 may determine the supply conditions (supply time, cooling time, number of times of setting, and the like) related to the supply of the first fluid among the process conditions so that the temperature of the holding unit 32 approaches the target temperature. In this case, the control unit 104 may set the processing conditions such that the temperature of the holding unit 32 approaches the target temperature, based on the time between the start timing of the temperature control process and the start timing of the first liquid process (the timing of carrying in the first workpiece W) performed subsequent to the temperature control process. The target temperature of the holding portion 32 may be set in advance to a value lower than the set temperature of the workpiece W before processing (set temperature in the liquid processing unit U10).
In the above example, the temperature control process for cooling the holding portion 32 is performed once before the liquid processes are performed a plurality of times, but the temperature control process for cooling the holding portion 32 may be performed before the liquid processes for each liquid process. Either one of the cooling solvent and the cooling gas may be supplied to the holding portion 32. In this case, the liquid processing unit U10 may not have any one of the solvent supply unit 50 and the gas supply unit 60. In the above example, the cooling solvent or the like is supplied to the central portion of the shaft 36 of the holding portion 32 and the mounting portion 33, but the cooling solvent or the like may be supplied to any one of the central portion of the holding portion 32, the central portion of the shaft 36 and the mounting portion 33.
(Effect of the second embodiment)
In the substrate processing method performed in the liquid processing unit U10 according to the second embodiment as well, the temperature adjustment process can perform the liquid processing with the variation in the ambient temperature at the processing position between the liquid processings reduced, as in the first embodiment. Therefore, the film thickness variation between the works W can be suppressed.
The temperature-influencing member may be a holding portion 32 that supports the rear surface Wb of the workpiece W so as to hold the workpiece W at the processing position. In the substrate processing method according to the second embodiment, the temperature adjustment process includes supplying the first fluid to the holding portion 32 to cool the holding portion 32. In this case, since the holding portion 32 that affects the temperature of the workpiece W is cooled before the liquid treatment, the degree of decrease in the ambient temperature at the treatment position accompanying the execution of the liquid treatment is small. Therefore, the variation in the temperature around the processing position between liquid processes is reduced, and thus the variation in the film thickness between the workpieces W can be suppressed.
In the substrate processing method according to the second embodiment, the supplying of the processing liquid to the front surface Wa of the workpiece W includes supplying the processing liquid to the front surface Wa of the workpiece W while rotating the holding portion 32 in a state of supporting the workpiece W by the rotation driving portion 34 connected to the holding portion 32. Supplying the first fluid to the holding portion 32 includes supplying the first fluid to a central portion of the holding portion 32. The central portion of the holding portion 32 is located in the vicinity of the rotation driving portion 34 for rotating the holding portion 32, and the heat capacity of the central portion tends to be larger than that of the other portions. Therefore, by cooling the central portion of the holding portion 32, the degree of temperature adjustment by the temperature adjustment process can be increased.
Here, the effects of the substrate processing method according to the second embodiment will be further described with reference to fig. 13 (a) to 13 (c). Fig. 13 (a) to 13 (c) show the measurement results of the coating at the center of the coating on the surface Wa of the workpiece W. The film thickness measurement shown in fig. 13 (a) to 13 (c) is performed in the same manner as the film thickness measurement shown in fig. 8, except for the method of executing the temperature control process. Fig. 13 (a) shows the measurement result of the film thickness according to the comparative example in the case where the temperature adjustment process of step S31 is not performed. Fig. 13 (b) shows the measurement result of the film thickness when the temperature adjustment process of step S31 shown in fig. 11 is performed and the number of times of setting in step S46 shown in fig. 12 is the first time. Fig. 13 (c) shows the film thickness measurement result when the temperature adjustment process of step S31 was performed and the number of times of setting in step S46 was five.
The slope (absolute value) of the approximate straight line indicating the degree of film thickness variation in the measurement result of fig. 13 (b) is reduced to about 2/3 compared to the slope (absolute value) of the approximate straight line in the measurement result of the comparative example of fig. 13 (a). The slope (absolute value) of the approximate straight line in the measurement result of fig. 13 (c) is reduced to about 1/4 compared to the slope (absolute value) of the approximate straight line in the measurement result of the comparative example of fig. 13 (a). As described above, it is understood from the measurement results in fig. 13 (a) to 13 (c) that the temperature adjustment process in step S31 is performed to suppress the variation in film thickness. In addition, by increasing the number of repetitions of supply of the first fluid and standby for cooling, variation in film thickness is further suppressed.
[ third embodiment ]
In the temperature adjustment processes according to the first and second embodiments described above, the temperature of the holding portion 32 (temperature-affecting member) in contact with the workpiece W is adjusted, but the temperature adjustment process may be performed on a temperature-affecting member disposed close to the workpiece W in order to reduce the variation in film thickness between liquid processes of the workpiece W. The coating and developing apparatus 2 (process module 12) of the substrate processing system according to the third embodiment includes a liquid process unit U20 instead of the liquid process unit U1. Fig. 14 shows a liquid treatment unit U20 according to a third embodiment. As shown in fig. 14, the liquid processing unit U20 includes, for example, a rotation holding portion 30, a processing liquid supply portion 40, and a storage portion 70.
The accommodating portion 70 surrounds the workpiece W held at the processing position by the holding portion 32. The receiving portion 70 is provided around the rotation holding portion 30. The accommodating portion 70 functions as a collecting container for receiving a part of the liquid supplied to the workpiece W during the liquid processing of the workpiece W (the processing liquid or the like thrown out of the workpiece W). The housing portion 70 includes, for example, a bottom wall 72, an outer peripheral wall 74, an inner peripheral wall 76, partition walls 78, 80, an inner cup 82, a drain pipe 84, and an exhaust pipe 86.
The bottom wall 72 is formed in an annular shape so as to surround the rotation holding portion 30. The outer peripheral wall 74 is formed in a cylindrical shape so as to surround the inner peripheral wall 76 and the inner cup 82. The outer peripheral wall 74 extends vertically upward from the outer peripheral edge of the bottom wall 72. The outer peripheral wall 74 is located outside the peripheral edge of the workpiece W held by the holding portion 32. Therefore, the outer peripheral wall 74 prevents the treatment liquid thrown off from the workpiece W rotated by the rotation holding portion 30 from scattering.
The inner circumferential wall 76 is formed in a cylindrical shape so as to surround the rotation holding portion 30. The inner peripheral wall 76 extends vertically upward from the inner peripheral edge of the bottom wall 72. The inner peripheral wall 76 is located inward of the peripheral edge of the workpiece W held by the holding portion 32. The upper end portion 76a of the inner circumferential wall 76 is closed by a partition wall 78. A through hole is provided in the center of the partition wall 78, and the shaft 36 passes through the through hole.
The partition wall 80 is formed in a cylindrical shape. The partition wall 80 is located between the outer peripheral wall 74 and the inner peripheral wall 76, and extends vertically upward from the bottom wall 72. As such, the partition wall 80 surrounds the inner circumferential wall 76. The upper end of the partition wall 80 is separated from the inner cup 82 located above the partition wall 80.
The inner cup 82 is formed in a cylindrical shape (ring shape). The inner cup 82 is attached to the upper end portion 76a of the inner peripheral wall 76 so as to protrude outward beyond the partition wall 78. The upper surface of the inner cup 82 is formed in an umbrella shape (mountain shape) protruding upward. The upper surface of the inner cup 82 includes an inclined surface S that is inclined downward outward in the radial direction along the axis Ax of the rotation holding portion 30. The inclined surface S faces the outer peripheral portion of the back surface Wb of the workpiece W held by the holding portion 32 in the vertical direction. When the surface Wa of the workpiece W is viewed from a direction along the axis Ax, the outer peripheral portion of the workpiece W overlaps at least a part of the inclined surface S. When the surface Wa of the workpiece W is viewed in the direction along the axis Ax, the central region of the workpiece W does not overlap the inner cup 82, and the outer peripheral portion of the workpiece W (the region other than the central region) overlaps the inner cup 82. Further, it can be said that the shortest distance between the upper surface of the inner cup 82 and the back surface of the workpiece W held by the holding portion 32 becomes shorter as going radially outward of the axis Ax of the holding portion 32.
The inner cup 82 is disposed in a state close to the workpiece W held at the processing position by the holding portion 32. As illustrated in fig. 14, the inner cup 82 may be disposed in a state close to the outer peripheral portion of the rear surface Wb of the workpiece W held at the processing position by the holding portion 32. In this case, the distance between the inner cup 82 and the central region of the back surface Wb of the workpiece W is larger than the distance between the inner cup 82 and the outer peripheral portion of the back surface Wb of the workpiece W. The upper surface of the inner cup 82 is close to the workpiece W at the processing position to the extent that the temperature of the workpiece W is affected. For example, the distance (shortest distance) between the inner cup 82 and the workpiece W at the processing position is about several mm. As described above, the inner cup 82 is a temperature-influencing member that influences the temperature of the workpiece W when the liquid processing is performed.
The liquid discharge pipe 84 is connected to the liquid discharge hole 72a formed between the outer peripheral wall 74 and the partition wall 80 in the bottom wall 72. The liquid thrown to the outside from the front surface Wa of the workpiece W flows through the outer peripheral wall 74 or a path CH between a bottom wall 186 described later and the inclined surface S of the inner cup 82, is guided between the outer peripheral wall 74 and the partition wall 80, and is discharged to the outside of the housing portion 70 through the liquid discharge hole 72a and the liquid discharge pipe 84.
The exhaust pipe 86 is connected to the gas discharge hole 72b in the bottom wall 72 at a portion formed between the inner peripheral wall 76 and the partition wall 80. The downward flow flowing around the periphery of the workpiece W is generated by exhausting the inside of the housing portion 70 through the exhaust pipe 86. The downward flow passes through the path CH, passes between the upper end of the partition wall 80 and the inner cup 82, is guided between the inner peripheral wall 76 and the partition wall 80, and is discharged to the outside of the housing portion 70 through the gas discharge holes 72b and the exhaust pipe 86.
The liquid processing unit U20 cools the inner cup 82 of the storage unit 70 by supplying a fluid to the inner cup 82. The fluid (hereinafter, referred to as "second fluid") supplied to the inner cup 82 may be any one of a solvent and a gas, and may be any kind of solvent or gas as long as the inner cup 82 can be cooled. For example, the liquid processing unit U20 further includes a solvent supply unit 90.
The solvent supply unit 90 supplies a solvent (hereinafter referred to as a "cooling solvent") capable of cooling the inner cup 82 to the inner cup 82. The cooling solvent supplied by the solvent supply portion 90 includes, for example, a diluent. The solvent supply portion 90 may supply the cooling solvent to the inclined surface S in the inner cup 82. The solvent supply section 90 includes, for example, a discharge member 180, a tank 92, and a valve 94.
The ejection member 180 ejects the cooling solvent toward the inner cup 82. Details of the ejection member 180 will be described later. The discharge member 180 is connected to the tank 92 via the pipe 96. The tank 92 contains a cooling solvent for supplying the cooling solvent to the ejection member 180. Valve 94 is disposed in line 96. The valve 94 is, for example, a pneumatic valve for adjusting the opening degree in the line 96. By controlling the valve 94, it is possible to switch between a state in which the cooling solvent is ejected from the ejection member 180 and a state in which the cooling solvent is not ejected from the ejection member 180.
The ejection member 180 is located above the housing portion 70 (outer peripheral wall 74). The discharge member 180 is formed so as to surround the periphery of the workpiece W held by the holding portion 32. The discharge member 180 may be formed in a cylindrical shape, for example, or may be formed in a substantially C-shape (arc shape). In this manner, the discharge member 180 may surround the entire peripheral edge of the workpiece W held by the holding portion 32, or may partially surround the peripheral edge of the workpiece W held by the holding portion 32. The ejection member 180 includes, for example, an outer peripheral wall 182, an inner peripheral wall 184, a bottom wall 186, and a top wall 188.
The outer peripheral wall 182 is formed to surround the inner peripheral wall 184, the bottom wall 186, and the top wall 188. The outer peripheral wall 182 may be formed in a cylindrical shape extending in the vertical direction. The lower end portion of the outer peripheral wall 182 is connected to the upper end portion of the outer peripheral wall 74. The outer peripheral wall 182 may be formed integrally with the outer peripheral wall 74 (a part of the receiving portion 70), or may be formed separately from the outer peripheral wall 74 (a part of the receiving portion 70). The inner peripheral wall 184 is formed to surround the periphery of the workpiece W held by the holding portion 32. The inner circumferential wall 184 may be formed in a cylindrical shape extending in the vertical direction.
The bottom wall 186 may be formed in such a manner as to connect the outer circumferential wall 182 with the inner circumferential wall 184. The bottom wall 186 may be inclined upward as going from the outer peripheral wall 182 to the inner peripheral wall 184. The bottom wall 186 may be formed in a circular ring shape (ring shape). The bottom wall 186 may be formed integrally with the outer circumferential wall 182 and the inner circumferential wall 184, or may be formed separately from the outer circumferential wall 182 and the inner circumferential wall 184.
The top wall 188 may be formed in a manner connecting the outer peripheral wall 182 with the inner peripheral wall 184. The top wall 188 is located above the bottom wall 186. The top wall 188 may be formed in an annular shape (ring shape), and the top wall 188 may be formed integrally with the outer circumferential wall 182 and the inner circumferential wall 184, or may be formed separately from the outer circumferential wall 182 and the inner circumferential wall 184.
The space defined by the outer peripheral wall 182, the inner peripheral wall 184, the bottom wall 186, and the top wall 188 functions as a reservoir chamber V capable of storing the cooling solvent therein. When the entire discharge member 180 is formed in an annular shape, the storage chamber V is also formed in an annular shape. An introduction hole 192 penetrating the outer peripheral wall 182 is formed in the outer peripheral wall 182 to connect the storage chamber V and a space outside the discharge member 180. The cooling solvent supplied from the tank 92 is introduced into the reservoir V through the introduction hole 192. The introduction hole 192 may be formed to extend in a horizontal direction.
A plurality of drip holes 194 are formed in the bottom wall 186 so as to communicate the space (path CH) between the discharge member 180 and the workpiece W with the reservoir chamber V. The plurality of dropping holes 194 may penetrate the bottom wall 186 so as to extend in the vertical direction. The plurality of dropping holes 194 are located, for example, vertically above the inclined surface S of the inner cup 82. The plurality of drip holes 194 are arranged along the circumferential direction around the axis Ax. The plurality of drip holes 194 may be arranged at substantially equal intervals in the circumferential direction. The cooling solvent flowing into the reservoir chamber V through the introduction hole 192 drops downward through the plurality of dropping holes 194. Thereby, the cooling solvent is discharged to the inclined surface S of the inner cup 82.
The liquid treatment unit U20 is also controlled by the control device 100, as in the liquid treatment unit U1 according to the first embodiment. The control unit 104 of the control device 100 causes the liquid processing unit U20 to execute a temperature adjustment process for adjusting the temperature of the inner cup 82 that affects the temperature of the workpiece W during the liquid processing. When the temperature adjustment process is executed, the control unit 104 lowers the temperature of the inner cup 82 by, for example, causing the solvent supply unit 90 to supply the second fluid (cooling solvent) to the inner cup 82. In this case, the temperature of the inner cup 82 after the temperature adjustment process is performed is lower than the temperature of the inner cup 82 in the case where the temperature adjustment process is not performed. In one example, when the liquid processing unit U20 performs the liquid processing on each of the plurality of workpieces W, the control unit 104 performs the temperature adjustment processing before performing the liquid processing on the plurality of workpieces W a plurality of times. Alternatively, the control unit 104 may cause the liquid processing unit U20 to periodically perform the temperature adjustment process.
Next, an example of a series of processes including the liquid process and the temperature control process performed by the liquid process unit U20 according to the third embodiment will be described with reference to fig. 15 to 17. Fig. 15 is a flowchart showing a series of processes sequentially performed on a plurality of workpieces W in one liquid processing unit U20. The temperature in the liquid treatment unit U20 may be adjusted to a predetermined set temperature before the series of treatments.
The controller 104 of the control device 100 first acquires the timing for carrying the first workpiece W to be processed into the liquid processing unit U20 (step S51). The controller 104 determines the timing of carrying the workpiece W into the liquid processing unit U20, for example, based on the state of the workpiece W before liquid processing and the operating state of the carrying device A3 which carries the workpiece W to the liquid processing unit U20. When the timing for carrying the workpiece W into the liquid processing unit U20 is determined, the start timing of the liquid processing performed after the carrying-in is determined.
Next, the control unit 104 waits until the cooling start timing is reached (step S52). For example, the cooling start timing is set so that the temperature of the inner cup 82 becomes the target temperature when the workpiece W is loaded into the liquid processing unit U20, in accordance with the loading timing of the workpiece W. In one example, the cooling start timing is set to a predetermined time before the carrying-in timing of the workpiece W into the liquid processing unit U20. In this case, the liquid processing by the liquid processing unit U20 is started within a predetermined time from the cooling of the inner cup 82 to the target temperature by supplying the second fluid (cooling solvent) to the inner cup 82. The cooling start timing will be described later.
Next, the controller 104 causes the liquid processing unit U20 to execute a temperature control process for cooling the inner cup 82 (step S53). For example, the controller 104 controls the liquid processing unit U20 to cool the inner cup 82 by supplying the second fluid to the inner cup 82. In one example, the control unit 104 supplies the cooling solvent to the inner cup 82 through the solvent supply unit 90 so that the temperature of the inner cup 82 becomes the target temperature. A specific example of the temperature adjustment processing in step S53 will be described later.
Next, the control unit 104 waits until the loading timing is reached (step S54). Before the carrying-in timing, the temperature of the workpiece W to be processed may be adjusted to a predetermined set temperature. Next, the controller 104 controls the conveying device a3 and the liquid processing unit U20 to convey the workpiece W into the liquid processing unit U20 (step S55). For example, step S55 is performed in the same manner as step S01 shown in fig. 5.
Next, the controller 104 controls the liquid processing unit U20 to perform liquid processing on the workpiece W held at the processing position by the holding unit 32 (step S56). For example, step S56 is performed in the same manner as step S02 shown in fig. 5 and 6. Next, the controller 104 controls the conveying device a3 and the liquid processing unit U20 to carry the workpiece W after the liquid processing out of the liquid processing unit U20 (step S57). For example, step S57 is performed in the same manner as step S03 shown in fig. 5.
Next, the control unit 104 determines whether or not the processing of the predetermined set number of workpieces W is completed (step S58). If it is determined in step S58 that the processing of the set number of workpieces W has not been completed (no in step S58), the control unit 104 repeats the processing of steps S54 to S58. On the other hand, when it is determined in step S58 that the processing of the set number of workpieces W is completed (step S58: "yes"), the control unit 104 ends a series of processing including liquid processing and temperature adjustment processing performed on the set number of workpieces W. As described above, unlike the first embodiment, the temperature control process (cooling of the inner cup 82) of step S53 is performed before the series of processes is performed on the plurality of workpieces W.
Fig. 16 is a flowchart showing an example of the temperature adjustment process in step S53. In the temperature adjustment process of step S53, first, the controller 104 controls the liquid processing unit U20 to start supplying the second fluid to the inner cup 82 (step S61). For example, the controller 104 causes the solvent supplier 90 to start ejecting the cooling solvent included in the second fluid toward the inner cup 82. In one example, the controller 104 switches the valve 94 of the solvent supplier 90 from the closed state to the open state to start the solvent supplier 90 from discharging the cooling solvent from the plurality of dropping holes 194.
Next, the control unit 104 waits until a predetermined supply time elapses after the start of the supply of the second fluid (step S62). The supply time is set to such an extent that the second fluid is supplied by an amount necessary for cooling the inner cup 82 by supplying the second fluid, and is set to, for example, several seconds or several tens of seconds. Next, the controller 104 controls the solvent supplier 90 to stop supplying the second fluid to the inner cup 82 (step S63). For example, the control unit 104 switches the valve 94 from the open state to the closed state to stop the ejection of the cooling solvent from the solvent supply unit 90. The supply of the cooling solvent is performed in a state where the holding portion 32 does not hold the workpiece W. Therefore, it is possible to suppress the direct influence of the supply of the cooling solvent to the inner cup 82 on the temperature of the workpiece W.
Next, the control unit 104 waits until a predetermined cooling time elapses after the supply of the second fluid is stopped (step S64). Thereby, the state where the second fluid is not supplied to the inner cup 82 is maintained for the cooling time. The cooling time is set to a degree that the cooling solvent supplied to the inner cup 82 is sufficiently evaporated (dried), and is set to, for example, several seconds or several tens of seconds. The cooling time may be equal to or shorter than the supply time in step S62, or may be longer than the supply time. During the period from the stop of the supply of the second fluid to the elapse of the cooling time, the cooling of the inner cup 82 further progresses due to the vaporization heat generated along with the evaporation of the cooling solvent.
Next, the control unit 104 determines whether or not the supply of the second fluid has been completed a predetermined set number of times (step S65). If it is determined in step S65 that the set number of times of supply has not been completed (no in step S65), control unit 104 repeats steps S61 to S65. The set number of times indicates the number of times of repeating the cooling process including the supply of the second fluid and the cooling after the supply. For example, the set number of times is set to a level at which the temperature of the inner cup 82 is cooled to the target temperature. In the temperature adjustment process of step S53, the cooling process may be performed a plurality of times, or may be performed once (step S65 may be omitted). As described above, the process conditions for the temperature adjustment process in step S53 may be determined in advance. The process conditions of the temperature control process include a supply time during which the second fluid is supplied, a cooling time during which the second fluid is kept on standby after being supplied, the number of times of setting, and a start timing of the temperature control process.
The control unit 104 may set at least a part of the processing conditions in the temperature adjustment processing based on the first timing of carrying in the workpiece W (the first timing of starting the liquid processing) performed subsequent to the temperature adjustment processing in step S53. For example, the controller 104 determines the supply time of step S62, the cooling time of step S64, and the number of times of setting of step S65 so that the temperature of the inner cup 82 approaches the target temperature (is included in the target range) based on the start timing of the first liquid treatment of step S56 shown in fig. 15. The controller 104 may set the start timing of the temperature control process in step S53, that is, the cooling start timing in step S52, based on the carrying-in timing of the first workpiece W (the start timing of the first liquid process).
Here, an example of a method of setting the cooling start timing will be described with reference to fig. 17. Fig. 17 is a graph showing the change with time in the temperature of the inner cup 82 along with the supply of the cooling solvent from the solvent supply portion 90. The horizontal axis represents time, and the vertical axis represents the temperature of the inner cup. In the graph of the temporal change in temperature shown in fig. 17, at time t1, the supply of the cooling solvent from the solvent supply portion 90 is stopped. Before time t1, the temperature of the inner cup 82 substantially matches the set temperature Ts in the liquid treatment unit U20. After time t1, the temperature of the inner cup 82 gradually decreases with the heat of vaporization of the cooling solvent. Then, at time t2, the temperature of the inner cup 82 is lower than the target temperature Ta. Thereafter, the temperature of the inner cup 82 is lowered to the minimum temperature, and then gradually raised. The temperature of the inner cup 82 exceeds the target temperature Ta at time t3, and then further rises.
In the temporal change in the temperature of the inner cup 82 shown in fig. 17, the time from the time t1 to the time t2 is a temperature decrease time from completion of the supply of the cooling solvent until the temperature decreases to the target temperature Ta. The time from the time t2 to the time t3 is a state maintaining time for maintaining the state in which the temperature of the inner cup 82 is lower than the target temperature Ta. The storage section 102 may store these temperature drop time and state maintenance time. The control unit 104 may determine the cooling start timing so that the timing of carrying in the workpiece W (the start timing of the liquid treatment) is included in the state maintaining time. In one example, the control unit 104 may determine the cooling start timing such that the time from the stop of the supply of the cooling solvent in the last step S63 to the timing of carrying in the workpiece W is greater than the temperature drop time and smaller than the total time of the temperature drop time and the state maintaining time. In this case, the control unit 104 starts the liquid processing in step S56 for a predetermined time (for the state maintaining time) after the inner cup 82 is cooled to the target temperature Ta. The control unit 104 may determine the supply time of step S62, the cooling time of step S64, and the number of times of setting at the same time when determining the cooling start timing, or may determine these processing conditions (supply time, cooling time, and number of times of setting) in advance.
In the above example, the temperature control process for cooling the inner cup 82 is performed once before the liquid treatments are performed a plurality of times, but the temperature control process for cooling the inner cup 82 may be performed before the liquid treatments for each liquid treatment. In the temperature adjustment process for cooling the inner cup 82, the cooling gas (second fluid) may be supplied to the inner cup 82 in addition to the cooling solvent, or the cooling gas (second fluid) may be supplied to the inner cup 82 instead of the cooling solvent. In this case, the liquid processing unit U20 may further include a gas supply unit that supplies a cooling gas to the inner cup 82. The gas supply unit can supply the cooling gas to the inner cup 82 through the discharge member 180 (storage chamber V). The cooling gas discharged from the discharge member 180 (storage chamber V) is guided to the exhaust pipe 86 through the path CH, thereby cooling the inner cup 82. Further, instead of the ejection member 180, the cooling gas may be supplied to the inner cup 82 from another nozzle.
The control unit 104 may cause the liquid processing unit U20 to execute a series of processes including a liquid process and a temperature adjustment process so that the temperature adjustment process is periodically (for example, at a predetermined cycle). Fig. 18 is a flowchart showing another example of a series of processes including a liquid process and a temperature adjustment process performed in the liquid process unit U20 according to the third embodiment.
The controller 104 first causes the liquid processing unit U20 to perform a temperature control process for cooling the inner cup 82 (step S81). The temperature adjustment processing in step S81 is performed in the same manner as in step S53 shown in fig. 15 and 16, for example. Next, the control unit 104 determines whether or not the liquid processing is executed in the liquid processing unit U20 (step S82). For example, the controller 104 determines whether or not to execute the liquid processing based on the state of the workpiece W before the liquid processing and the operating state of the conveying device A3 which conveys the workpiece W to the liquid processing unit U20.
When it is determined in step S82 that the liquid processing is to be executed (step S82: yes), the controller 104 controls the liquid processing unit U20 and the conveying device A3 to carry the workpiece W to be processed into the liquid processing unit U20 in the same manner as in step S55 shown in fig. 15 (step S83). Next, the controller 104 causes the liquid processing unit U20 to perform the liquid processing on the workpiece W to be processed (step S84) in the same manner as in step S56 shown in fig. 15 and 16. Next, the controller 104 controls the liquid processing unit U20 and the conveying device A3 in the same manner as in step S57 shown in fig. 15 to carry the workpiece W to be processed out of the liquid processing unit U20 (step S85).
On the other hand, when it is determined in step S82 that the liquid processing is not to be executed (step S82: NO), the control unit 104 does not execute steps S83 to S85. When it is determined in step S82 that the liquid processing is not to be executed or after step S85 is completed, the controller 104 determines whether or not the cooling start timing is reached (step S86). For example, the control unit 104 determines whether or not a predetermined standby time has elapsed from a reference time. For example, the reference time is set as the end time of the temperature control process after the temperature control process is performed, and when the liquid process is performed after the temperature control process, the reference time is set (updated) as the end time of the liquid process. The control unit 104 determines that the cooling start timing is present when the standby time has elapsed, and determines that the cooling start timing is not present when the standby time has not elapsed.
If it is determined in step S86 that the timing is not the cooling start timing, the process returns to step S82. On the other hand, when it is determined in step S86 that the timing is the cooling start timing and the reference time is reset, the process returns to step S81 (temperature adjustment process is executed again). By performing the series of processes described above, when the liquid process is not performed until the standby time elapses after the temperature adjustment process is performed, the temperature adjustment process of step S81 is performed again. In addition, when the liquid treatment is performed after the temperature adjustment treatment and the next liquid treatment is not performed until the standby time elapses, the temperature adjustment treatment of step S81 is performed again. Note that, the control unit 104 may be configured to cause the liquid processing unit U20 to continuously perform the temperature control process at a predetermined cycle (after a predetermined period of time has elapsed since the previous temperature control process was completed) regardless of whether or not the liquid process is performed.
The controller 104 may supply the second fluid (e.g., a cooling solvent) to the inner cup 82 through the solvent supplier 90 during a period between completion of the supply of the processing liquid and start of the carrying out of the workpiece W from the processing position in the liquid processing, in addition to the temperature adjustment processing for cooling the inner cup 82. In this case, the controller 104 may control the solvent supplier 90 to supply the cooling solvent to the inner cup 82 when the workpiece W for forming the coating film of the processing liquid is rotated after the processing liquid is supplied. The controller 104 may control the solvent supplier 90 to supply the cooling solvent to the inner cup 82 while waiting until the workpiece W subjected to the liquid processing is carried out after the coating film of the processing liquid is formed (after the rotation of the workpiece W is stopped).
(Effect of the third embodiment)
In the substrate processing method performed in the liquid processing unit U20 according to the third embodiment, as in the first and second embodiments, the temperature adjustment process can be performed to perform the liquid processing with the temperature variation around the processing position reduced. Therefore, the film thickness variation between the works W can be suppressed.
The temperature-influencing member may be an inner cup 82 disposed in the housing portion 70 surrounding the workpiece W held at the processing position in a state close to the outer peripheral portion of the rear surface Wb of the workpiece W. In the substrate processing method according to the third embodiment, the temperature control process includes supplying the second fluid to the inner cup 82 to cool the inner cup 82. In this case, the inner cup 82 that affects the temperature of the workpiece W is cooled before the liquid treatment, and therefore the degree of decrease in the ambient temperature at the treatment position accompanying the execution of the liquid treatment is reduced. Therefore, the variation in the temperature around the processing position between liquid processes is reduced, and thus the variation in the film thickness between the workpieces W can be suppressed.
In the substrate processing method according to the third embodiment, the step of supplying the second fluid to the inner cup 82 to cool the inner cup 82 includes supplying the solvent to the inner cup 82 and maintaining a state where the solvent is not supplied to the inner cup 82 after the solvent is supplied. In this case, the inner cup 82 can be cooled while suppressing the amount of the solvent used, because the cooling of the inner cup progresses due to the vaporization heat of the solvent supplied to the inner cup 82.
In the substrate processing method according to the third embodiment, the liquid processing is started within a predetermined time from the time when the inner cup 82 is cooled to the target temperature Ta by supplying the second fluid to the inner cup 82. In this case, the liquid treatment can be started in a state where the ambient temperature at the treatment position is lowered to the same extent as the target temperature Ta.
The substrate processing method according to the third embodiment may further include: carrying the workpiece W out of the treatment position after the liquid treatment; and supplying the second fluid to the inner cup 82 during a period from completion of the supply of the treatment liquid to the surface Wa of the workpiece W to start carrying out the workpiece W from the treatment position. In this case, the temperature of the inner cup 82 after the liquid treatment can be suppressed from varying between the liquid treatments.
Here, the effects of the substrate processing method according to the third embodiment will be further described with reference to fig. 19 (a) and 19 (b). Fig. 19 (a) and 19 (b) show the results of measuring the film thicknesses of the central portion and the outer peripheral portion of the coating on the surface Wa of the workpiece W. The film thickness at the center in fig. 19 (a) and 19 (b) is measured in the same manner as in fig. 8 except for the method of executing the temperature control process. The outer peripheral portion of the coating film, which is one of the objects to be measured for film thickness, corresponds to the portion of the workpiece W that faces the inner cup 82, and corresponds to the region from approximately half the radius of the workpiece W to the outer edge. The film thicknesses of a plurality of portions in the outer peripheral portion are measured, and the average value thereof is calculated as the film thickness of the outer peripheral portion. Fig. 19 (a) and 19 (b) show measurement results of the film thicknesses of the first, third, and fifth workpieces W and approximate straight lines based on the measurement results of the film thicknesses. Fig. 19 (a) shows the measurement result of the film thickness according to the comparative example in the case where the temperature adjustment process of step S53 is not performed. Fig. 19 (b) shows the measurement result of the film thickness when the series of processes shown in fig. 15 is executed.
When the measurement results of the central portion of the coating films in the two drawings are compared, the slope (absolute value) of the approximate line indicating the degree of the film thickness variation in the central portion in the measurement result in fig. 19 (b) is slightly lower than the slope (absolute value) of the approximate line indicating the degree of the film thickness variation in the central portion in the measurement result in fig. 19 (a). When the measurement results of the outer peripheral portions of the coatings in the two drawings are compared, the slope (absolute value) of the approximate line indicating the degree of the film thickness variation at the outer peripheral portion in the measurement result in fig. 19 (b) is reduced to about 1/3 of the slope (absolute value) of the approximate line indicating the degree of the film thickness variation at the outer peripheral portion in the measurement result in fig. 19 (a). As described above, it is understood from the measurement results in fig. 19 (a) and fig. 19 (b) that the temperature adjustment process in step S53 is performed to suppress the variation in the film thickness in the outer peripheral portion.
[ modified examples ]
The disclosure in this specification is to be considered in all respects as illustrative and not restrictive. Various omissions, substitutions, and changes may be made to the above examples (first to third embodiments) without departing from the scope of the claims and their spirit.
The control unit 104 may control the liquid processing unit U1 to perform both the temperature control process for cooling the holding part 32 in the second embodiment and the temperature control process for cooling the inner cup 82 in the third embodiment before the liquid processing. Instead of cooling the inner cup 82, the controller 104 may cause the liquid processing unit U1 to perform a temperature control process for raising the temperature of the inner cup 82. In this case, the control unit 104 may cause the liquid processing unit U1 to perform both the temperature adjustment process for increasing the temperature of the holding portion 32 by rotating the holding portion 32 and the temperature adjustment process for increasing the temperature of the inner cup 82.
The temperature-influencing member is a member that is in contact with or close to the workpiece W, and may be a member other than the holding portion 32 and the inner cup 82 as long as the temperature-influencing member influences the temperature of the workpiece W when the liquid processing is performed. In the above example, the liquid treatment for forming the coating film of the resist liquid is exemplified, but an arbitrary temperature adjustment treatment may be performed before the liquid treatment for forming the coating film of the treatment liquid other than the resist liquid (for example, the coating film of the treatment liquid for forming the lower layer film or the upper layer film).

Claims (12)

1. A method of processing a substrate, comprising the steps of:
performing a liquid treatment including supplying a treatment liquid to a surface of a substrate held at a predetermined treatment position using a liquid treatment unit that holds the substrate at the treatment position and supplies the treatment liquid to the surface of the substrate, and holding the substrate so that a coating of the treatment liquid can be formed on the surface of the substrate after supplying the treatment liquid; and
a temperature adjustment process of adjusting a temperature of a member that affects a temperature of the substrate when the liquid process is performed in the liquid process unit is performed before the liquid process.
2. The substrate processing method according to claim 1,
the processing conditions in the temperature adjustment processing are set according to the start timing of the liquid processing.
3. The substrate processing method according to claim 1,
the member includes a holding portion that supports a back surface of the substrate so as to hold the substrate at the processing position,
the temperature adjustment process includes cooling the holding portion by supplying a first fluid to the holding portion.
4. The substrate processing method according to claim 3,
supplying the processing liquid to the surface of the substrate includes supplying the processing liquid to the surface of the substrate while rotating the holding portion in a state in which the substrate is supported by a rotation driving portion connected to the holding portion,
supplying the first fluid to the holding portion includes supplying the first fluid to a central portion of the holding portion.
5. The substrate processing method according to claim 1,
the member includes an inner cup which is a receiving portion disposed in a state of surrounding an outer peripheral portion of a back surface of the substrate among the receiving portions of the substrate held at the processing position,
the tempering process includes cooling the inner cup by supplying a second fluid to the inner cup.
6. The substrate processing method according to claim 5,
cooling the inner cup by supplying the second fluid to the inner cup includes supplying a solvent to the inner cup and maintaining a state where the solvent is not supplied to the inner cup after the solvent is supplied.
7. The substrate processing method according to claim 5 or 6,
the liquid treatment is started within a predetermined time from the cooling of the inner cup to a target temperature by supplying the second fluid to the inner cup.
8. The substrate processing method according to claim 5 or 6, further comprising:
carrying out the liquid treatment and then carrying out the substrate from the treatment position; and
the second fluid is supplied to the inner cup during a period from completion of the supply of the processing liquid to the surface of the substrate to start carrying out the substrate from the processing position.
9. The substrate processing method according to claim 1 or 2,
the member includes a holding portion that supports a back surface of the substrate so as to hold the substrate at the processing position,
supplying the processing liquid to the surface of the substrate includes supplying the processing liquid to the surface of the substrate while rotating the holding portion in a state where the substrate is supported,
the temperature adjustment process includes increasing the temperature of the holding portion by rotating the holding portion in a state where the substrate is not supported by the holding portion.
10. The substrate processing method according to claim 3 or 4,
the member includes a holding portion that supports a back surface of the substrate so as to hold the substrate at the processing position,
the supplying of the liquid to the surface of the substrate includes supplying the processing liquid to the surface of the substrate while rotating the holding portion in a state where the substrate is supported,
the temperature adjustment treatment comprises the following steps: before the substrate to which the processing liquid is supplied is placed on the holding portion, rotating the holding portion in a state where the substrate is not supported by the holding portion to increase the temperature of the holding portion; and supplying the first fluid to the holding portion after raising the temperature of the holding portion.
11. A computer-readable storage medium storing a program for causing an apparatus to execute the substrate processing method according to any one of claims 1 to 10.
12. A substrate processing apparatus includes:
a liquid processing unit configured to supply a processing liquid to a surface of a substrate while holding the substrate at a predetermined processing position; and
a control unit that controls the liquid processing unit,
wherein the control unit causes the liquid processing unit to execute a liquid process including supplying the processing liquid to the surface of the substrate held at the processing position and holding the substrate so that a coating film of the processing liquid can be formed on the surface of the substrate after the supply of the processing liquid,
the control unit causes the liquid processing unit to execute a temperature adjustment process in which a temperature of a member that affects a temperature of the substrate when the liquid processing is executed, in the liquid processing unit, before the liquid processing.
CN202110983823.0A 2020-09-04 2021-08-25 Substrate processing method, storage medium, and substrate processing apparatus Pending CN114141657A (en)

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Publication number Priority date Publication date Assignee Title
JPH0536597A (en) 1991-07-26 1993-02-12 Tokyo Electron Ltd Treatment method
JP2005217251A (en) 2004-01-30 2005-08-11 Renesas Technology Corp Manufacturing method of semiconductor device and semiconductor manufacturing device
JP5216713B2 (en) 2009-08-03 2013-06-19 東京エレクトロン株式会社 Coating processing apparatus, coating processing method, program, and computer storage medium
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