CN114138128A - Transparent electrode assembly, device and transparent electrode assembly preparation method - Google Patents
Transparent electrode assembly, device and transparent electrode assembly preparation method Download PDFInfo
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- CN114138128A CN114138128A CN202010913139.0A CN202010913139A CN114138128A CN 114138128 A CN114138128 A CN 114138128A CN 202010913139 A CN202010913139 A CN 202010913139A CN 114138128 A CN114138128 A CN 114138128A
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- 238000002360 preparation method Methods 0.000 title abstract description 8
- 238000002834 transmittance Methods 0.000 claims abstract description 57
- 239000000463 material Substances 0.000 claims abstract description 45
- 238000001228 spectrum Methods 0.000 claims abstract description 37
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 230000001678 irradiating effect Effects 0.000 claims abstract description 6
- 230000009471 action Effects 0.000 claims abstract description 4
- 229910052751 metal Inorganic materials 0.000 claims description 38
- 239000002184 metal Substances 0.000 claims description 38
- 238000000034 method Methods 0.000 claims description 18
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 15
- 229910052709 silver Inorganic materials 0.000 claims description 15
- 239000004332 silver Substances 0.000 claims description 15
- 238000004891 communication Methods 0.000 claims description 14
- 239000010949 copper Substances 0.000 claims description 11
- 229910052782 aluminium Inorganic materials 0.000 claims description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 9
- 229910052802 copper Inorganic materials 0.000 claims description 9
- 239000010931 gold Substances 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 9
- KWOLFJPFCHCOCG-UHFFFAOYSA-N Acetophenone Chemical compound CC(=O)C1=CC=CC=C1 KWOLFJPFCHCOCG-UHFFFAOYSA-N 0.000 claims description 8
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 claims description 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 8
- 229910052737 gold Inorganic materials 0.000 claims description 8
- -1 aldehyde ketone Chemical class 0.000 claims description 7
- 239000007769 metal material Substances 0.000 claims description 7
- 239000000956 alloy Substances 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- 150000001993 dienes Chemical class 0.000 claims description 4
- 239000004973 liquid crystal related substance Substances 0.000 claims description 4
- 230000008030 elimination Effects 0.000 abstract description 8
- 238000003379 elimination reaction Methods 0.000 abstract description 8
- 230000000694 effects Effects 0.000 description 14
- 230000008569 process Effects 0.000 description 11
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 10
- 238000005516 engineering process Methods 0.000 description 8
- 238000005240 physical vapour deposition Methods 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- 239000012780 transparent material Substances 0.000 description 5
- 238000000231 atomic layer deposition Methods 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 239000011777 magnesium Substances 0.000 description 4
- 229910044991 metal oxide Inorganic materials 0.000 description 4
- 150000004706 metal oxides Chemical class 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 229910052593 corundum Inorganic materials 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 239000005350 fused silica glass Substances 0.000 description 3
- 229910010272 inorganic material Inorganic materials 0.000 description 3
- 239000011147 inorganic material Substances 0.000 description 3
- 238000010295 mobile communication Methods 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 229910001845 yogo sapphire Inorganic materials 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium dioxide Chemical compound O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 229920000123 polythiophene Polymers 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 238000002207 thermal evaporation Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229920000144 PEDOT:PSS Polymers 0.000 description 1
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910003069 TeO2 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910007709 ZnTe Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- JKQOBWVOAYFWKG-UHFFFAOYSA-N molybdenum trioxide Inorganic materials O=[Mo](=O)=O JKQOBWVOAYFWKG-UHFFFAOYSA-N 0.000 description 1
- 230000006855 networking Effects 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000004038 photonic crystal Substances 0.000 description 1
- 229920000172 poly(styrenesulfonic acid) Polymers 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 229920000128 polypyrrole Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 1
- LAJZODKXOMJMPK-UHFFFAOYSA-N tellurium dioxide Chemical compound O=[Te]=O LAJZODKXOMJMPK-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- FIXNOXLJNSSSLJ-UHFFFAOYSA-N ytterbium(III) oxide Inorganic materials O=[Yb]O[Yb]=O FIXNOXLJNSSSLJ-UHFFFAOYSA-N 0.000 description 1
Images
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/0412—Digitisers structurally integrated in a display
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/13338—Input devices, e.g. touch panels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/40—OLEDs integrated with touch screens
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- General Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Human Computer Interaction (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The invention relates to the technical field of electrodes, and provides a transparent electrode assembly, a device and a preparation method of the transparent electrode assembly, wherein the transparent electrode assembly comprises: a transparent substrate layer; the patterned transparent electrode is arranged on the surface of the substrate layer; the shadow eliminating layer is made of photochromic materials and comprises a first shadow eliminating area and a second shadow eliminating area, the first shadow eliminating area is arranged on the surface of the transparent electrode, which is back to the substrate layer, and the second shadow eliminating area is arranged between the etched transparent electrodes and is positioned on the surface of the substrate layer. The preparation method comprises the following steps: arranging a shadow eliminating layer on the surface of the patterned transparent electrode, wherein the shadow eliminating layer is made of photochromic materials; and irradiating one side of the transparent electrode, which is back to the shadow eliminating layer, by adopting a spectrum with a preset waveband, so that the shadow eliminating layer is discolored under the action of the spectrum to form a first shadow eliminating area and a second shadow eliminating area, and the transparent electrode assembly is obtained. The invention can make the transparent electrode component have the same transmittance to the spectrum, thereby achieving the purpose of shadow elimination.
Description
Technical Field
The invention relates to the technical field of electrodes, in particular to a transparent electrode assembly, a device and a preparation method of the transparent electrode assembly.
Background
With the rapid development of display technologies, the development of displays is also becoming more and more popular, for example, in a touch screen structure, a structure requiring electric conduction is further provided on the surface of a display screen to realize a touch function. These structures will absorb or reflect light more or less, affecting the luminous efficiency and even the display effect, and it is necessary to use a conductive material having a high transmittance. For example, a metal oxide thin film represented by an Indium Tin Oxide (ITO) film doped with tin is widely used in commercial applications.
However, in the process of manufacturing the touch screen, the electrode structure needs to be patterned to meet the design requirement, and the patterning may cause the light transmittance of each portion of the electrode structure to change, so that the light transmittance of each portion is different, and the bottom shadow of the electrode is likely to appear, which affects the overall transparent effect.
Disclosure of Invention
The invention aims to provide a transparent electrode assembly to solve the technical problem that the overall transparent effect is influenced by the background image of an electrode easily caused by patterning in the prior art.
To achieve the above object, a first aspect of the present invention provides a transparent electrode assembly comprising:
a transparent substrate layer;
the patterned transparent electrode is arranged on the surface of the substrate layer;
the shadow eliminating layer is made of photochromic materials and comprises a first shadow eliminating area and a second shadow eliminating area, the first shadow eliminating area is arranged on the surface, back to the substrate layer, of the transparent electrode, and the second shadow eliminating area is arranged between the etched transparent electrodes and located on the surface of the substrate layer.
In one embodiment, the second erasing region is formed by irradiating the photochromic material with a spectrum of a preset waveband.
In one embodiment, the spectrum is ultraviolet light.
In one embodiment, the second shadow region has a lower light transmittance than the first shadow region.
In one embodiment, the photochromic material is a conjugated organic molecular material.
In one embodiment, the conjugated organic molecular material comprises at least one of the following materials: conjugated diene, alpha, beta unsaturated aldehyde ketone, styrene and acetophenone.
In one embodiment, the thickness of the first shadow region is 200nm to 1000 nm;
the thickness of the second shadow area is 200-1000 nm.
In one embodiment, the light transmittance of the first shadow eliminating area is 86-90%;
the light transmittance of the second shadow eliminating area is 86-90%.
In one embodiment, the transparent electrode includes:
the first transparent medium layer is arranged on the surface of the substrate layer;
the second transparent medium layer is arranged between the first transparent medium layer and the vanishing layer;
and the conductive unit is arranged between the first transparent medium layer and the second transparent medium layer and comprises at least two transparent conductive layers and a third transparent medium layer, and the third transparent medium layer is arranged between every two adjacent conductive layers.
In one embodiment, the conductive layer is made of a metallic material including at least one of silver, gold, copper, aluminum;
or an alloy containing at least one metal selected from silver, gold, copper, and aluminum as a main component.
In one embodiment, the thickness of the conductive layer is in a range of 2 to 25 nanometers.
In one embodiment, the light transmittance of the transparent electrode is 40% -90%, and the resistance of the transparent electrode is 0.05-20 ohm/square.
In one embodiment, the transparent electrode further comprises a transparent outer conductive layer;
the surface of one side, back to the conductive unit, of the second transparent medium layer is provided with the outer conductive layer;
and/or the surface of one side of the first transparent medium layer, which is back to the conductive unit, is provided with the outer conductive layer.
The transparent electrode assembly provided by the invention has the beneficial effects that: according to the embodiment of the invention, the first and second shadow eliminating areas are respectively arranged, so that the transmittance of the whole transparent electrode assembly to a spectrum (such as visible light) is the same, and when the transparent electrode assembly is viewed from one side of the shadow eliminating layer, the bottom shadow of the transparent electrode cannot be viewed, and the purpose of shadow elimination is achieved.
In a second aspect of the invention, there is provided an apparatus comprising a transparent electrode assembly as described above.
In one embodiment, the device is a display device comprising a liquid crystal display, an OLED display, a projection display, a flat panel display, an eye-worn display, a transparent display, or a see-through display.
In one embodiment, the device is a touch device.
In one embodiment, the device is a transparent antenna, and the transparent antenna is suitable for a 4G communication band and/or a 5G communication band and/or a 6G communication band.
In a third aspect of the present invention, there is provided a transparent electrode assembly manufacturing method comprising:
arranging a shadow eliminating layer on the surface of the patterned transparent electrode, wherein the shadow eliminating layer is made of photochromic materials;
and irradiating one side of the transparent electrode, which is back to the shadow eliminating layer, by adopting a spectrum with a preset waveband so that the shadow eliminating layer changes color under the action of the spectrum to form a first shadow eliminating area and a second shadow eliminating area so as to obtain the transparent electrode assembly, wherein the first shadow eliminating area is arranged on the surface, which is back to the substrate layer, of the transparent electrode, and the second shadow eliminating area is arranged between the etched transparent electrodes and is positioned on the surface of the substrate layer.
In one embodiment, the spectrum is ultraviolet light.
In one embodiment, the photochromic material is a conjugated organic molecular material.
The preparation method of the transparent electrode assembly provided by the invention has the beneficial effects that at least: according to the embodiment of the invention, the shadow eliminating layer is arranged on the surface of the patterned transparent electrode, and is irradiated from the side back to the shadow eliminating layer through the spectrum of the preset waveband, so that the structure of the shadow eliminating layer is changed, the first shadow eliminating area and the second shadow eliminating area with different transmittances are formed, the transmittances of the whole transparent electrode assembly to the spectrum are the same, and the bottom shadow of the transparent electrode cannot be observed when the transparent electrode assembly is observed from the shadow eliminating layer side, so that the purpose of shadow eliminating is achieved.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed for the embodiments or the prior art descriptions will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings without creative efforts.
Fig. 1 is a schematic structural view of a transparent electrode assembly according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a first transparent electrode in a transparent electrode assembly according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of a second transparent electrode in a transparent electrode assembly according to an embodiment of the present invention;
FIG. 4 is a schematic structural view of a third transparent electrode in the transparent electrode assembly according to the embodiment of the present invention;
fig. 5 is a schematic structural view of a fourth transparent electrode in the transparent electrode assembly according to the embodiment of the present invention;
FIG. 6 is a schematic flow chart illustrating a method for manufacturing a transparent electrode assembly according to an embodiment of the present invention;
fig. 7 is a schematic view illustrating formation of a transparent electrode assembly in a method for manufacturing a transparent electrode assembly according to an embodiment of the present invention.
Detailed Description
In order to make the technical problems, technical solutions and advantageous effects to be solved by the present invention more clearly apparent, the present invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
It will be understood that when an element is referred to as being "secured to" or "disposed on" another element, it can be directly or indirectly secured to the other element. When an element is referred to as being "connected to" another element, it can be directly or indirectly connected to the other element. The terms "upper", "lower", "left", "right", "front", "rear", "vertical", "horizontal", "top", "bottom", "inner", "outer", and the like indicate orientations or positions based on the orientations or positions shown in the drawings, and are for convenience of description only and not to be construed as limiting the technical solution. The terms "first", "second" and "first" are used merely for descriptive purposes and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features. The meaning of "plurality" is two or more unless specifically limited otherwise.
Referring to fig. 1, an embodiment of the invention provides a transparent electrode assembly including a transparent substrate layer 10, a patterned transparent electrode 20, and a shadow layer 30. The patterned transparent electrode 20 is disposed on the surface of the substrate layer 10, the shadow eliminating layer 30 is made of a photochromic material and includes a first shadow eliminating area 301 and a second shadow eliminating area 302, the first shadow eliminating area 301 is disposed on the surface of the transparent electrode 20 opposite to the substrate layer 10, and the second shadow eliminating area 302 is disposed between the etched transparent electrodes 20 and on the surface of the substrate layer 10.
In this embodiment, the base layer 10 is made of a transparent material, which has a high light transmittance, thereby ensuring that the electromagnetic spectrum can be transmitted through the transparent electrode. During the patterning process, a part of the transparent electrode 20 is etched, so as to form a predetermined pattern; a layer of photochromic material is laid on the surface of the transparent electrode 20 to form a shadow eliminating layer, a part of the photochromic material is filled at the etching position of the transparent electrode 20, the part corresponding to the etching position is a second shadow eliminating area 302, and the part arranged on the surface of the non-etched transparent electrode 20 is a first shadow eliminating area 301.
In this embodiment, the first and second shadow areas 301 and 302 are respectively disposed, so that the transmittance of the entire transparent electrode assembly with respect to a spectrum (for example, visible light) is the same, and when viewed from the shadow eliminating layer 30 side, the bottom shadow of the transparent electrode 20 is not observed, thereby achieving the purpose of shadow elimination. The transparent electrode assembly provided by the embodiment can be applied to various fields, for example, the display field, and can ensure good display effect due to good shadow elimination.
Further, in order to ensure that the vanishing layer 30 can exert a good vanishing effect, it is necessary to adjust the transmittance of the vanishing layer 30. Because the vanishing layer 30 is made of photochromic material, when the vanishing layer 30 is irradiated by adopting a spectrum of a preset waveband, the irradiated part of the vanishing layer 30 is changed, the color of the irradiated part is deepened, and the transmittance of light passing through the part is reduced; while the non-illuminated portion is not changed. In this embodiment, the spectrum irradiating the vanishing layer 30 is ultraviolet light, and the transparent electrode 20 can effectively absorb the ultraviolet light, so that the ultraviolet light cannot penetrate through to reach the first vanishing layer 301; the etched portion of the transparent electrode 20 cannot absorb the ultraviolet rays, so that the ultraviolet rays can be irradiated to the second vanishing layer 302, so that the second vanishing layer 302 is changed. Of course, in other embodiments, the vanishing layer 30 can be irradiated by other wavelength bands of spectrum according to the photochromic material. It will be appreciated that, depending on the photochromic material, the particular wavelength range of the spectrum may be adjusted accordingly.
Further, the light transmittances of the first and second erasing regions 301 and 302 are different. In consideration of the absorption effect of the transparent electrode 20 on the spectrum, in the patterned transparent electrode 20, the light transmittance of the transparent electrode at the non-etched part is smaller than that of the transparent electrode at the etched part, so that the light transmittance of the transparent electrode needs to be adjusted, and by adjusting the light transmittance of the second erasing region 302 to be smaller than that of the first erasing region 301, the light transmittance of each part of the transparent electrode assembly tends to be consistent, thereby playing a role of eliminating the shadow.
Furthermore, the photochromic material is a conjugated organic molecular material, so that a good shadow eliminating effect can be achieved. The conjugated organic molecular material comprises at least one of the following materials: conjugated diene, alpha, beta unsaturated aldehyde ketone, styrene and acetophenone. When ultraviolet light meeting the conditions is absorbed by the conjugated organic molecular material, the molecular structure of the ultraviolet light is changed, so that the properties such as light transmittance and the like of the ultraviolet light are changed, and the purpose of adjusting the light transmittance is achieved. In this embodiment, the light transmittance of the first erasing region is 86 to 90%, and the light transmittance of the second erasing region is 86 to 90%. Of course, in other embodiments, the light transmittances of the first and second shadow areas may have other values, and are not limited to the above-mentioned cases.
In order to achieve a better shadow elimination effect, the thickness of the first shadow elimination region in this embodiment is 200nm to 1000nm, and the thickness of the second shadow elimination region is 200nm to 1000 nm. Of course, in other embodiments, the thickness of the first and second shadow areas may have other values, and is not limited to the above.
Referring to fig. 2, the transparent electrode 20 further includes a first transparent dielectric layer 21, a conductive unit 22 and a second transparent dielectric layer 23. The first transparent medium layer 21 is disposed on the surface of the substrate layer 10, the second transparent medium layer 23 is disposed between the first transparent medium layer 21 and the vanishing layer 30, and the conductive unit 22 is disposed between the first transparent medium layer 21 and the second transparent medium layer 23. The conductive unit 22 includes at least two transparent conductive layers 221 and a third transparent dielectric layer 222, and the third transparent dielectric layer 222 is disposed between two adjacent conductive layers 221.
In the present embodiment, the substrate layer 10, the dielectric layers of the transparent electrode (including the first transparent dielectric layer 21, the second transparent dielectric layer 23 and the third transparent dielectric layer 222) and the conductive layer 221 are made of transparent materials, which have high light transmittance, so as to ensure that the electromagnetic spectrum can transmit through the transparent electrode. Furthermore, at least two conductive layers 221 are disposed in the conductive unit 22, which can improve the transmittance and reduce the resistance of the transparent electrode, thereby facilitating the transmission of electrical signals.
The transparent electrode provided by the embodiment can meet the requirements of low resistance and high light transmittance. Specifically, in the present embodiment, a conductive unit is disposed between two transparent dielectric layers, at least two conductive layers are disposed in the conductive unit, and two adjacent conductive layers are electrically isolated from each other by a transparent dielectric layer. Because the conductive unit comprises a plurality of conductive layers, the conductive unit can be regarded as a special one-dimensional photonic crystal structure, partial reflection and partial transmission of light can occur at each interface, and constructive interference of the transmitted light can effectively enhance the overall transmission of the lamination in the whole transparent electrode, so that the light transmittance can be improved. Therefore, through setting up the multilayer conducting layer, can reduce the thickness of every layer of conducting layer, not only can guarantee transparent electrode's electric conductive property, can effectively reduce the loss when electromagnetic spectrum sees through the conducting element moreover, improve the luminousness.
It should be understood that the number of conductive layers 221 in the conductive element 22 can be set as desired, and several alternatives are given here.
Referring to fig. 2, in one embodiment, the number of the conductive layers 221 is two, the number of the third transparent dielectric layer 222 is one, the third transparent dielectric layer 222 is disposed between the two conductive layers 221, and the two conductive layers 221 are respectively connected to the first transparent dielectric layer 21 and the second transparent dielectric layer 23. The structure of the transparent electrode is a layered structure, and comprises the following components in sequential stacking arrangement: a first transparent dielectric layer 21, a conductive layer 221, a third transparent dielectric layer 222, a conductive layer 221, and a second transparent dielectric layer 23. When two conductive layers are used, the thickness of each conductive layer can be reduced as compared with when one conductive layer is used, and thus the overall light transmittance can be improved while ensuring low resistance.
Referring to fig. 3, in one embodiment, the number of the conductive layers 221 is three, the number of the third transparent dielectric layer 222 is two, the third transparent dielectric layer 222 is disposed between two adjacent conductive layers 221, and the two conductive layers 221 on two sides are respectively connected to the first transparent dielectric layer 21 and the second transparent dielectric layer 23. The structure of the transparent electrode is a layered structure, and comprises the following components in sequential stacking arrangement: a first transparent dielectric layer 21, a conductive layer 221, a third transparent dielectric layer 222, a conductive layer 221, and a second transparent dielectric layer 23. The thickness of each conductive layer can be further reduced when three conductive layers are used, as compared with when one conductive layer is used, so that the overall light transmittance is improved while ensuring low resistance.
Referring to fig. 4, in one embodiment, the number of the conductive layers 221 is four, the number of the third transparent dielectric layer 222 is three, a third transparent dielectric layer 222 is disposed between two adjacent conductive layers 221, and the two conductive layers 221 on two sides are respectively connected to the first transparent dielectric layer 21 and the second transparent dielectric layer 23. The structure of the transparent electrode is a layered structure, and comprises the following components in sequential stacking arrangement: a first transparent dielectric layer 21, a conductive layer 221, a third transparent dielectric layer 222, a conductive layer 221, and a second transparent dielectric layer 23. The thickness of each conductive layer can be further reduced when four conductive layers are used, as compared with when one conductive layer is used, so that the overall light transmittance is improved while ensuring low resistance.
Of course, in other embodiments, the number of the conductive layers 221 in the conductive unit 22 may also be more than four, and is not limited to the above case, and is not limited herein.
Further, the material for forming the conductive layer 221 may be selected as needed. In order to ensure the conductive performance of the conductive layer, the conductive layer 221 is made of a metal material in the present embodiment. The specific type of the metal material may be selected as needed, and may be, for example, silver (Ag), aluminum (Al), gold (Au), copper (Cu), titanium (Ti), nickel (Ni), chromium (Cr), magnesium (Mg), tantalum (Ta), etc., which may be a certain metal; the alloy may contain at least one metal selected from silver, gold, copper, and aluminum as a main component, and the alloy may further contain another metal (e.g., nickel, palladium, tungsten, etc.).
For example, the conductive layer 221 is made of a single metal such as metallic silver, and has good conductivity and light transmittance. It should be understood that the multiple conductive layers 221 in the conductive unit 22 may be made of the same metal material (for example, all made of metal silver), or may be made of different metal materials (for example, one conductive layer 221 is made of metal silver, another conductive layer 221 is made of metal aluminum, another conductive layer 221 is made of metal copper, etc.), and this is not limited herein. In consideration of the actual process, all the conductive layers 221 may be made of the same metal material.
For another example, the conductive layer 221 may further include two metals, for example, the conductive layer 221 may include a first metal and a second metal, where the first metal is silver, gold or copper, the second metal is aluminum (Al), titanium (Ti), nickel (Ni), chromium (Cr), magnesium (Mg), copper (Cu) or tantalum (Ta), and the ratio of the first metal to the second metal may be adjusted as needed to improve the grain size and the surface flatness, so that the light transmittance and the resistance of the transparent electrode may be further adjusted to meet the diversified performance requirements. It should be understood that the multiple conductive layers 221 in the conductive unit 22 may be made of the same metal combination (for example, the first metal is silver, and the second metal is aluminum), or may be made of different metal combinations (for example, the first metal of one conductive layer 221 is silver, the second metal is aluminum, the first metal of the other conductive layer 221 is silver, the second metal is titanium, the first metal of the other conductive layer 221 is silver, the second metal is nickel, etc.), which is not limited herein. In consideration of the actual process, all the conductive layers 221 may be selected to be made of the same metal combination.
Further, the material for manufacturing the dielectric layers (including the first transparent dielectric layer 21, the second transparent dielectric layer 23, and the third transparent dielectric layer 222) can be selected according to the requirement. For example, the dielectric layer may be made of an inorganic material, such as Si3N4、AlN、MoO3ZnSe, ZnS, ZnTe, IGZO, GaN, etc.; can also be made of metal oxides, e.g. Ta2O5、ZnO、ITO、AZO、TiO2、TeO2、WO3、NiO,HfO2、Al2O3、SiO2、VO2、V2O5、GeO2、SiO、ZrO2、Y2Os、Yb2O3And the like, and may contain one of them, or may contain a mixture of two or more thereof; can also be prepared byOrganic materials, such as conductive polymers, which include at least poly (3, 4-ethylenedioxythiophene): poly (styrenesulfonic acid) (PEDOT: PSS), Polyaniline (polyailine), polypyrrole (Poly (polypyrole)), and Polythiophene (Polythiophene).
It should be understood that the different dielectric layers may be made of the same type of material (e.g., the first transparent dielectric layer 21, the second transparent dielectric layer 23, and the third transparent dielectric layer 222 may each be made of an inorganic material, a metal oxide, or an organic material), or may be made of different materials (e.g., the first transparent dielectric layer 21 is made of an inorganic material, the second transparent dielectric layer 23 is made of a metal oxide, and the third transparent dielectric layer 222 is made of an organic material). When the number of the third transparent dielectric layers 222 is two or more, the multiple third transparent dielectric layers 222 can be made of the same material (for example, the multiple third transparent dielectric layers 222 are all made of ZnO), or can be made of different materials (for example, one third transparent dielectric layer 222 is made of ZnO, and the other third transparent dielectric layer 222 is made of Al2O3Made, etc.), not limited herein.
Further, the base layer 10 may be made of different types of transparent materials according to the use scenario. In one embodiment, the substrate layer 10 may be made of a rigid transparent material, for example, glass, fused silica, Al2O3And the transparent electrode can be applied to devices such as common displays and electronic devices, and the displays or electronic devices do not need to be bent, so that the substrate layer 10 can well support and fix the dielectric layer and the conductive layer thereon. Whereas when the transparent electrode is to be applied in a flexible device, the substrate layer 10 may be made of a flexible transparent material, such as PET, PEN, COP, CPI, PC, etc. At this time, the transparent electrode has good flexibility, and can be bent along with the bending of the flexible device, so that the use requirement of the flexible device is met.
In one embodiment, the thickness of the base layer 10 is: 5-500 microns (for example, 10-200 microns) can be achieved, so that the transparent electrode can play a good supporting role and a good fixing role for other layers in the transparent electrode, and has good light transmittance. For example, when the base layer 10 is Fused Silica (Fused Silica), the thickness thereof may be set to 50 to 500 μm.
Further, the thickness of each layer in the transparent electrode may be set as needed.
In one embodiment, the thickness of the conductive layer 221 is in a range of 2 to 25 nm (for example, 4 to 15 nm), so that the conductive layer 221 has good conductive performance and light transmittance. It is understood that as the number of conductive layers 221 increases, the thickness of each conductive layer 221 may be reduced. For example, when the number of the conductive layers 221 is two, the thickness of each conductive layer 221 may be set to 20 nm; when the number of the conductive layers 221 is increased to three, the thickness of each conductive layer 221 may be set to 13 nm; when the number of the conductive layers 221 is increased to four, the thickness of each conductive layer 221 may be set to 10 nm. Of course, in one transparent electrode, the thickness of each conductive layer 221 may be set to be the same or different, and is not limited herein.
In one embodiment, the thickness of the first transparent dielectric layer 21 is in a range of 30 to 120 nm, so that the first transparent dielectric layer 21 can ensure good protection and electrical isolation for the conductive layer 221, and has good light transmittance. It is understood that the thickness of the first transparent medium layer 21 may be different according to the conductive unit 22. For example, when the number of the conductive layers 221 is two, the thickness of the first transparent dielectric layer 21 may be set to 44 nm; when the number of the conductive layers 221 is three, the thickness of the first transparent dielectric layer 21 may be set to 42 nm; when the number of the conductive layers 221 is four, the thickness of the first transparent dielectric layer 21 may be set to 40 nm. Of course, in other embodiments, the thickness of the first transparent medium layer 21 may be the same for different conductive units 22, and is not limited herein.
In one embodiment, the thickness of the second transparent dielectric layer 23 is in a range of 30 to 120 nm, so that the second transparent dielectric layer 23 can be ensured to have good protection and electrical isolation effects on the conductive layer 221, and has good light transmittance. It will be appreciated that the thickness of the second transparent dielectric layer 23 may vary from conductive element 22 to conductive element. For example, when the number of the conductive layers 221 is two, the thickness of the second transparent dielectric layer 23 may be set to 45 nm; when the number of the conductive layers 221 is three, the thickness of the second transparent dielectric layer 23 may be set to 43 nm; when the number of the conductive layers 221 is four, the thickness of the second transparent dielectric layer 23 may be set to 41 nm. Of course, in other embodiments, the thickness of the second transparent medium layer 23 may be the same for different conductive units 22, and is not limited herein.
In one embodiment, the thickness of the third transparent dielectric layer 222 is in a range of 30 to 120 nm, so that the third transparent dielectric layer 222 can protect and electrically isolate the conductive layer 221, and has good light transmittance. It is understood that the thickness of the third transparent medium layer 222 may be different according to the conductive layer 221 in the conductive unit 22. For example, when the number of the conductive layers 221 is two, the number of the third transparent dielectric layers 222 is one, and the thickness thereof may be set to 101 nm; when the number of the conductive layers 221 is three, the number of the third transparent dielectric layers 222 is two, and the thickness of each layer may be set to 98 nm; when the number of the conductive layers 221 is four, the number of the third transparent dielectric layers 222 is three, and each layer may be set to be 90 nm in thickness.
It should be understood that when the number of the third transparent dielectric layers 222 is two or more, the thickness of each of the third transparent dielectric layers 222 may be set to be different. For example, when the number of the conductive layers 221 is three, the number of the third transparent dielectric layers 222 is two, wherein the thickness of one layer may be set to 98 nm, and the thickness of the other layer may be set to 101 nm; when the number of the conductive layers 221 is four, the number of the third transparent dielectric layers 222 is three, where one layer may be 88 nm thick, another layer may be 91 nm thick, and another layer may be 94 nm thick.
In the preparation of the conductive layer 221, the metal conductive layer 221 may be formed on the surface of the third transparent dielectric layer 222 by a Physical Vapor Deposition (PVD) process, a Chemical Vapor Deposition (CVD) process, a sputtering process, an Atomic Layer Deposition (ALD) process, or the like. When two or more metals are present in the conductive layer 221, the metal can be prepared by co-deposition, and the co-deposition is performed by PVD sputtering, such as magnetron sputtering, thermal evaporation, electron beam evaporation, and the like.
In the transparent electrode provided in this embodiment, the wavelength of the transmitted electromagnetic spectrum is preferably 380nm to 780nm, and the light transmittance range is 40% to 90%. For example, the optical transmittance may be greater than or equal to 40%, or greater than or equal to 50%, or greater than or equal to 55%, or greater than or equal to 60%, or greater than or equal to 65%, or greater than or equal to 70%, or greater than or equal to 75%, or greater than or equal to 80%, or greater than or equal to 85%, or greater than or equal to 90% for a selected target wavelength or range of wavelengths (which may be polarized or unpolarized) of the electromagnetic spectrum. Of course, in some embodiments, the transmittance may be higher for a selected target wavelength of the electromagnetic spectrum. The dielectric layer in the transparent electrode can absorb ultraviolet light, so that the ultraviolet light cannot penetrate through the dielectric layer. Of course, the electromagnetic spectrum transmitted by the transparent electrode can also be visible light + infrared light, and can be adjusted according to different application scenes.
The transparent electrode provided in this embodiment has a reflectance range of 50% to 90% for an electromagnetic spectrum outside a selected wavelength range. For example, the reflectivity may be greater than or equal to 50%, or greater than or equal to 55%, or greater than or equal to 60%, or greater than or equal to 65%, or greater than or equal to 70%, or greater than or equal to 75%, or greater than or equal to 80%, or greater than or equal to 85%, or greater than or equal to 90% for a target wavelength or range of wavelengths outside of the selected electromagnetic spectrum. Of course, in some embodiments, the reflectivity may be higher for target wavelengths outside of the selected electromagnetic spectrum.
The transparent electrode provided in this embodiment has a resistance range of 0.05 to 20 ohm/square (e.g., 0.5 to 20 ohm/square). For example, the transparent electrode has a Sheet Resistance (Sheet Resistance) of less than or equal to about 20 ohms/square, or less than or equal to about 15 ohms/square, or less than or equal to about 10 ohms/square, or less than or equal to about 5 ohms/square, or less than or equal to about 4 ohms/square, or less than or equal to about 3 ohms/square, or less than or equal to about 2 ohms/square, or less than or equal to about 1 ohms/square, or less than or equal to about 0.5 ohms/square, or less than or equal to about 0.1 ohms/square, or less than or equal to about 0.05 ohms/square.
Referring to fig. 5, in order to further improve the conductive performance of the transparent electrode, the transparent electrode further includes a transparent outer conductive layer 24, and the outer conductive layer 24 is disposed on a surface of the second transparent dielectric layer 23 facing away from the conductive unit 22, and can be used as the conductive layer 221 in the auxiliary conductive unit 22. Of course, the surface of the first transparent dielectric layer 20 facing away from the conductive unit 22 may also be provided with the outer conductive layer 24 to further assist the conductive layer 221 in the conductive unit 22.
In one embodiment, the outer conductive layer 24 may be made of a metal mesh material, and the metal may be gold, silver, or the like, and may include one metal, or may include two or more metals. In the preparation of the outer conductive layer 24, the metal outer conductive layer 24 may be formed on the surface of the second transparent dielectric layer 23 or the first transparent dielectric layer 20 by a Physical Vapor Deposition (PVD) process, a Chemical Vapor Deposition (CVD) process, an Atomic Layer Deposition (ALD) process, or the like. When two or more metals are present in the outer conductive layer 24, the metal can be prepared by co-deposition, which is performed by PVD sputtering, such as magnetron sputtering, thermal evaporation, e-beam evaporation, and the like. It can also be formed on the surface of the second transparent medium layer 23 or the first transparent medium layer 20 by coating.
In one embodiment, the outer conductive layer 24 may also be made of carbon nanotubes, which have good light transmittance and can also meet the requirement of electrical conductivity.
In other embodiments, the outer conductive layer 24 may be made of other materials, and is not limited to the above.
In one embodiment, the thickness of the outer conductive layer 24 is in a range of 0.1 to 5 μm, so that the outer conductive layer 24 has good conductive performance and light transmittance.
It is also an object of this embodiment to provide an apparatus comprising at least one transparent electrode assembly as described above. The transparent electrode assembly provided by the present embodiments may be used in a variety of optical and photonic applications where current transparent conductors, such as ITO, may be substituted. Compared with the device adopting the ITO electrode, the device adopting the transparent electrode component provided by the embodiment has the advantages of obviously improved bending capability and stability, and good shadow elimination, thereby having good display effect.
In one embodiment, the device is a display device, including a Liquid Crystal Display (LCD), an OLED display, a projection display (e.g., using digital mirror technology or liquid crystal on silicon (LCoS)), a flat panel display, an eyewear display, a transparent display, a see-through display, or the like, in which the transparent electrode assembly may be applied as a conductor. It is to be understood that the display may also be a display with touch functionality, such as a touch screen of an electronic device.
In one embodiment, the device is a touch device, such as a touch component of a touch display screen, and the transparent electrode component can be used in the touch component to improve the display effect of the touch display screen.
In one embodiment, the device is a transparent antenna. The transparent electrode assembly provided by the embodiment can be applied to a transparent antenna to replace the original conductive material, and has better light transmittance and conductive performance, so that the transparent antenna can be applied to other electronic equipment, and a better light transmittance effect is achieved.
The transparent antenna provided by the embodiment can be applied to any communication band, for example, at least one of a 4G communication band, a 5G communication band and a 6G communication band. With the development of communication technology, Mobile communication technology has been developed to the fifth Generation Mobile communication technology (5G or 5G technology for short), and the 5G technology is the latest Generation cellular Mobile communication technology, i.e. the extension behind the 4G (LTE-A, WiMax), 3G (UMTS, LTE) and 2G (gsm) systems. 5G helps achieve high data rates, reduced latency, energy savings, reduced cost, increased system capacity and large-scale device connectivity. The transparent antenna provided by the embodiment can be suitable for 5G communication wave bands, even suitable for 6G communication wave bands, so as to meet the communication requirements of electronic equipment adopting the transparent antenna. The electronic device may be a mobile terminal (e.g., a mobile phone, a tablet computer, etc.), or may be other types of smart devices (e.g., a smart television, etc.), which is not limited herein. The transparent antenna can also be applied to automobiles, and is beneficial to the realization of real-time networking and other functions of the automobiles. The transparent antenna can also be applied to other devices, and is not limited to the above situation, and is not limited herein.
Of course, in other embodiments, the above-mentioned device may be of other types, and is not limited herein.
Referring to fig. 6, the present embodiment is further directed to a method for manufacturing a transparent electrode assembly, and it is understood that the method for manufacturing a transparent electrode assembly provided by the present embodiment can be used to manufacture the transparent electrode assembly, but is not limited to the transparent electrode assembly.
The method of preparing the transparent electrode assembly includes:
step S10: and arranging a shadow eliminating layer on the surface of the patterned transparent electrode, wherein the shadow eliminating layer is made of photochromic materials.
After obtaining the transparent electrode, the transparent electrode is fixed on the base layer, and the transparent electrode is patterned according to a predetermined requirement, so that the patterned transparent electrode can be obtained (see fig. 7 (a)). The patterned transparent electrode is covered with a layer of vanishing layer, and the vanishing layer may be disposed on the surface of the patterned transparent electrode in a coating manner, or may be disposed in other manners, which is not limited herein.
Step S20: and (c) irradiating the side, opposite to the vanishing layer, of the transparent electrode by adopting a spectrum with a preset waveband (see fig. 7(b)), so that the vanishing layer changes color under the action of the spectrum, and a first vanishing area and a second vanishing area are formed to obtain the transparent electrode assembly (see fig. 7(c)), wherein the first vanishing area is arranged on the surface, opposite to the base layer, of the transparent electrode, and the second vanishing area is arranged between the etched transparent electrodes and is positioned on the surface of the base layer.
In this embodiment, the spectrum is ultraviolet light, and the photochromic material is a conjugated organic molecular material, so that a good shadow eliminating effect can be achieved. The conjugated organic molecular material comprises at least one of the following materials: conjugated diene, alpha, beta unsaturated aldehyde ketone, styrene and acetophenone. When ultraviolet light meeting the conditions is absorbed by the conjugated organic molecular material, the molecular structure of the ultraviolet light is changed, so that the properties such as light transmittance and the like of the ultraviolet light are changed, and the purpose of adjusting the light transmittance is achieved. In this embodiment, the light transmittance of the first erasing region is 86 to 90%, and the light transmittance of the second erasing region is 86 to 90%. Of course, in other embodiments, the light transmittances of the first and second shadow areas may have other values, and are not limited to the above-mentioned cases. The thicknesses of the first and second vanishing layers in the vanishing layer can be set as required, for example, the thickness of the first vanishing region is 200nm to 1000nm in this embodiment, and the thickness of the second vanishing region is 200nm to 1000 nm. Of course, in other embodiments, the thickness of the first and second shadow areas may have other values, and is not limited to the above.
In the embodiment, the shadow eliminating layer is arranged on the surface of the patterned transparent electrode, and the patterned transparent electrode is irradiated from the side back to the shadow eliminating layer through the spectrum of the preset waveband, so that the structure of the shadow eliminating layer is changed, a first shadow eliminating area and a second shadow eliminating area with different transmittances are formed, the transmittances of the whole transparent electrode assembly to the spectrum (such as visible light) are the same, and when the transparent electrode assembly is viewed from the shadow eliminating layer side, the bottom shadow of the transparent electrode cannot be viewed, so that the purpose of shadow eliminating is achieved.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are intended to be included within the scope of the present invention.
Claims (20)
1. A transparent electrode assembly, comprising:
a transparent substrate layer;
the patterned transparent electrode is arranged on the surface of the substrate layer;
the shadow eliminating layer is made of photochromic materials and comprises a first shadow eliminating area and a second shadow eliminating area, the first shadow eliminating area is arranged on the surface, back to the substrate layer, of the transparent electrode, and the second shadow eliminating area is arranged between the etched transparent electrodes and located on the surface of the substrate layer.
2. The transparent electrode assembly of claim 1, wherein the second shadow region is formed by the photochromic material after being irradiated with a predetermined wavelength band of spectrum.
3. The transparent electrode assembly of claim 2, wherein the spectrum of light is ultraviolet light.
4. The transparent electrode assembly of claim 1, wherein the second shadow region has a lower light transmittance than the first shadow region.
5. The transparent electrode assembly of claim 1, wherein the photochromic material is a conjugated organic molecular material.
6. The transparent electrode assembly of claim 5, wherein the conjugated organic molecule material comprises at least one of: conjugated diene, alpha, beta unsaturated aldehyde ketone, styrene and acetophenone.
7. The transparent electrode assembly of claim 1, wherein the first shadow region has a thickness of 200nm to 1000 nm;
the thickness of the second shadow area is 200-1000 nm.
8. The transparent electrode assembly of claim 1, wherein the first shadow region has a light transmittance of 86 to 90%;
the light transmittance of the second shadow eliminating area is 86-90%.
9. The transparent electrode assembly according to any one of claims 1 to 8, wherein the transparent electrode comprises:
the first transparent medium layer is arranged on the surface of the substrate layer;
the second transparent medium layer is arranged between the first transparent medium layer and the vanishing layer;
and the conductive unit is arranged between the first transparent medium layer and the second transparent medium layer and comprises at least two transparent conductive layers and a third transparent medium layer, and the third transparent medium layer is arranged between every two adjacent conductive layers.
10. The transparent electrode assembly of claim 9, wherein the conductive layer is made of a metal material including at least one of silver, gold, copper, aluminum;
or an alloy containing at least one metal selected from silver, gold, copper, and aluminum as a main component.
11. The transparent electrode assembly of claim 9, wherein the conductive layer has a thickness in a range of 2 to 25 nm.
12. The transparent electrode assembly according to claim 9, wherein the transparent electrode has a light transmittance of 40% to 90% and a resistance of 0.05 to 20 ohm/square.
13. The transparent electrode assembly of claim 9, wherein the transparent electrode further comprises a transparent outer conductive layer;
the surface of one side, back to the conductive unit, of the second transparent medium layer is provided with the outer conductive layer;
and/or the surface of one side of the first transparent medium layer, which is back to the conductive unit, is provided with the outer conductive layer.
14. A device comprising at least one transparent electrode assembly according to any one of claims 1 to 13.
15. The device of claim 14, wherein the device is a display device comprising a liquid crystal display, an OLED display, a projection display, a flat panel display, an eye-worn display, a transparent display, or a see-through display.
16. The apparatus of claim 14, wherein the apparatus is a touch-sensitive apparatus.
17. The apparatus according to claim 14, wherein the apparatus is a transparent antenna adapted for use in a 4G communication band and/or a 5G communication band and/or a 6G communication band.
18. A method of making a transparent electrode assembly, comprising:
arranging a shadow eliminating layer on the surface of the patterned transparent electrode, wherein the shadow eliminating layer is made of photochromic materials;
and irradiating one side of the transparent electrode, which is back to the shadow eliminating layer, by adopting a spectrum with a preset waveband so that the shadow eliminating layer changes color under the action of the spectrum to form a first shadow eliminating area and a second shadow eliminating area so as to obtain the transparent electrode assembly, wherein the first shadow eliminating area is arranged on the surface, which is back to the substrate layer, of the transparent electrode, and the second shadow eliminating area is arranged between the etched transparent electrodes and is positioned on the surface of the substrate layer.
19. The method of preparing a transparent electrode assembly according to claim 18, wherein the spectrum of light is ultraviolet light.
20. The method of preparing a transparent electrode assembly according to claim 18, wherein the photochromic material is a conjugated organic molecular material.
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