CN114123828A - Inverter circuit and modulation method - Google Patents
Inverter circuit and modulation method Download PDFInfo
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- CN114123828A CN114123828A CN202010887355.2A CN202010887355A CN114123828A CN 114123828 A CN114123828 A CN 114123828A CN 202010887355 A CN202010887355 A CN 202010887355A CN 114123828 A CN114123828 A CN 114123828A
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- 230000000151 anti-reflux effect Effects 0.000 claims description 35
- 230000000903 blocking effect Effects 0.000 claims description 30
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
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Abstract
According to the inverter circuit and the modulation method provided by the invention, the first energy storage unit is arranged between the inverter bridge and the direct current power supply, so that the inverter bridge can work in a direct-connection or non-direct-connection state, the bridge arm direct-connection signal which is regularly converted is inserted in the inversion working period of the circuit, the boost inductor and the energy storage capacitor in the system can simultaneously and alternately work, the parasitic parameters of a circuit lead are reduced by adopting an integrally packaged half-bridge module, the working frequency is improved, and the size of a filter element is reduced, so that the electric energy conversion from low-voltage direct current input to high-frequency alternating current output under the high-frequency conversion condition is realized. Compared with the traditional multi-stage boosting inverter circuit, the inverter circuit system provided by the embodiment has a simpler structure and is easy to realize.
Description
Technical Field
The invention relates to the technical field of inverter circuits, in particular to an inverter circuit and a modulation method.
Background
The inverter circuit is an electric energy conversion device which can convert input direct current electric energy into alternating current electric energy for output, and is widely applied to occasions such as new energy power generation, uninterruptible power supplies, motor drive and the like. In order to realize electric energy conversion, an input direct-current voltage of the existing voltage-type inverter circuit needs to be higher than a peak value of an output voltage.
Therefore, in the prior art, a first-stage boost circuit is added at the front stage of the inverter circuit, so that the lower direct-current input voltage is boosted to the high-voltage direct current meeting the inversion condition. The traditional technical scheme adopts two-stage electric energy conversion, so that the control scheme of the electric energy conversion system is more complex, the system stability is reduced, and meanwhile, the structure of an inverter circuit is complex, and the volume and the cost are increased.
Disclosure of Invention
The invention aims to provide an inverter circuit and a modulation method, which are used for solving the problems of complex structure, large space, higher cost and the like of the existing inverter circuit.
In a first aspect, the present invention provides an inverter circuit, which includes a first energy storage module, an inverter bridge, and an electromagnetic isolation module; one end of the inverter bridge is electrically connected with a direct current power supply through the first energy storage module; the other end of the inverter bridge is electrically connected with the electromagnetic isolation module; the first energy storage module is arranged between the inverter bridge and the positive electrode of the direct-current power supply; the first energy storage module is used for storing energy input by the direct-current power supply when the inverter bridge works in a direct-through state, and the first energy storage module is also used for releasing the stored energy when the inverter bridge works in a non-direct-through state; the inverter bridge comprises a plurality of half-bridge modules, and the half-bridge modules are used for switching between a direct-connection state and a non-direct-connection state under the driving of a driving signal so as to convert a direct-current electric signal into an alternating-current electric signal and boost the signal; the electromagnetic isolation module is used for outputting the alternating current signals converted by the inverter bridge and realizing the electrical isolation of the input voltage and current at the direct current side and the output voltage and current at the alternating current side.
Further, the first energy storage module comprises: the first boost inductor, the second boost inductor, the first diode, the second diode and the third diode; the anode of the first diode is electrically connected with the second end of the first boosting inductor; the cathode of the first diode is electrically connected with the second end of the second boosting inductor; the anode of the second diode is electrically connected with the first end of the first boosting inductor; the cathode of the second diode is electrically connected with the first end of the second boosting inductor; the anode of the third diode is electrically connected with the second end of the first boost inductor, and the cathode of the third diode is electrically connected with the first end of the second boost inductor.
Further, the inverter bridge comprises a first half-bridge module and a second half-bridge module; the first half-bridge module and the second half-bridge module respectively comprise an upper switch tube and a lower switch tube; the upper and lower switching tubes of the first half-bridge module are integrally arranged; and the upper and lower switching tubes of the second half-bridge module are integrally arranged.
Furthermore, the inverter circuit also comprises a first anti-reflux diode and a second anti-reflux diode; the anode of the first anti-reflux diode is electrically connected with the input end of the upper switching tube of the first half-bridge module; the negative electrode of the first anti-reflux diode is electrically connected with the input end of the upper switching tube of the second half-bridge module; the anode of the second anti-reflux diode is electrically connected with the output end of the lower switch tube of the first half-bridge module, and the cathode of the second anti-reflux diode is electrically connected with the output end of the lower switch tube of the second half-bridge module; the first anti-reflux diode and the second anti-reflux diode are used for preventing the current on the alternating current side from flowing backwards.
Furthermore, the inverter circuit further comprises an energy storage capacitor, and the energy storage capacitor comprises a first end and a second end; the first end of the energy storage capacitor is electrically connected with the cathode of the first anti-reflux diode; the second end of the energy storage capacitor is connected with the anode of the second anti-reflux diode; the energy storage capacitor is used for absorbing energy of the first energy storage module and the direct current power supply and outputting the absorbed energy to an alternating current side.
Further, the electromagnetic isolation module is a transformer; the inverter bridge is connected with the primary side of the transformer so as to output electric energy to an alternating current side through the transformer;
the inverter circuit further comprises a first blocking capacitor;
the first end of the first blocking capacitor is electrically connected with the middle node of the first half-bridge module; the second end of the first blocking capacitor is electrically connected with the middle node of the second half-bridge module through the primary side of the transformer; the middle node refers to a connection point of an upper switching tube and a lower switching tube of the bridge arm;
the first blocking capacitor is used for suppressing a direct current component in a pulse voltage signal output by an intermediate node of the first half-bridge module and the second half-bridge module.
Furthermore, the inverter circuit further comprises a filtering module; the filtering module is electrically connected with the secondary side of the transformer; the filtering module is used for filtering high-frequency harmonic components in the high-frequency pulse signals output by the transformer.
Furthermore, the inverter circuit further comprises an input capacitor, and a first end of the input capacitor is electrically connected with the anode of the input power supply; and the second end of the input capacitor is electrically connected with the negative electrode of the input power supply.
In a second aspect, the present invention further provides a modulation method, including:
comparing the first modulated wave input signal, the third modulated wave input signal and the fourth modulated wave input signal with the first carrier wave input signal respectively to generate a first sine pulse width signal, a first fixed pulse width signal and a second fixed pulse width signal; the third modulation wave input signal and the fourth modulation wave input signal are direct current signals with opposite amplitudes;
comparing the second modulated wave input signal, the third modulated wave input signal and the fourth modulated wave input signal with a second carrier signal respectively to generate a second sinusoidal pulse width signal, a third fixed pulse width signal and a fourth fixed pulse width signal; the first modulation wave input signal and the second modulation wave input signal are both sine wave signals, and the phase difference is 180 degrees;
generating a first half-bridge module upper switch tube driving signal Vgs1H and a first half-bridge module lower switch tube driving signal Vgs1L through a first combinational logic module according to the first sine pulse width signal, the first fixed pulse width signal and the second fixed pulse width signal;
generating a second half-bridge module upper switch tube driving signal Vgs2H and a second half-bridge module lower switch tube driving signal Vgs2L through a second combinational logic module according to the second sinusoidal pulse width signal, the third fixed pulse width signal and the fourth fixed pulse width signal;
and driving the switch tube to be switched on or switched off according to the first half-bridge module upper switch tube driving signal Vgs1H, the first half-bridge module lower switch tube driving signal Vgs1L, the second half-bridge module upper switch tube driving signal Vgs2H and the second half-bridge module lower switch tube driving signal Vgs2L so as to switch the first half-bridge module or the second half-bridge module between a through state and a non-through state.
Further, the boost factor of the modulation method is:
In a third aspect, the invention further provides an electrical apparatus, which includes the inverter circuit as described above.
Compared with the prior art, the inverter circuit and the modulation method provided by the invention have the advantages that the first energy storage unit is arranged between the inverter bridge and the direct-current power supply, so that the inverter bridge can work in a direct-connection or non-direct-connection state, the bridge arm direct-connection signals with regular conversion are inserted in the circuit inversion working period, the boost inductor and the energy storage capacitor in the system can work alternately at the same time, the parasitic parameters of a circuit lead are reduced by adopting an integrally packaged half-bridge module, the working frequency is improved, and the size of a filter element is reduced, so that the electric energy conversion from low-voltage direct current input to high-frequency alternating current output under the high-frequency conversion condition is realized. Compared with the traditional multi-stage boosting inverter circuit, the inverter circuit system provided by the embodiment has a simpler structure and is easy to realize.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained from the drawings without inventive effort.
FIG. 1 is a schematic diagram of an inverter circuit according to the present invention;
fig. 2A is a schematic diagram of an inverter circuit according to the present invention in a first through state;
fig. 2B is a schematic diagram of the inverter circuit according to the present invention in a second through state;
fig. 2C is a schematic diagram of the inverter circuit according to the present invention in a third through state;
fig. 2D is a schematic diagram of an inverter circuit according to a third through state of the present invention;
fig. 3A is a schematic diagram of an inverter circuit according to the present invention in a first non-pass state;
FIG. 3B is a schematic diagram of an inverter circuit according to the present invention in a second non-pass state;
FIG. 3C is a schematic diagram of an inverter circuit according to a third non-pass state of the present invention;
FIG. 3D is a schematic diagram of an inverter circuit according to a third non-pass state of the present invention;
FIG. 4 illustrates a schematic diagram of one logic block provided by the present invention;
FIG. 5 is a voltage gain diagram of the inverter circuit provided by the present invention;
FIG. 6 illustrates a control system schematic provided by the present invention;
fig. 7 shows a package schematic of a half-bridge module;
FIG. 8A shows a schematic diagram of a switching tube;
FIG. 8B shows a schematic view of another switching tube;
FIG. 8C shows a schematic view of another switching tube;
fig. 9 is a schematic flow chart of a modulation method provided in this embodiment;
FIG. 9A is a schematic diagram showing the input signal voltage and the output signal voltage of the inverter circuit provided by the present invention;
FIG. 9B is a voltage diagram of the DC blocking and energy storage capacitors provided by the present invention;
fig. 9C is a schematic diagram illustrating an input signal current and an output signal current of the inverter circuit according to the present invention.
Icon: LCD Unit-first energy storage module; bridge-inverter bridge; t1-electromagnetic isolation module; lin1 — first boost diode; lin 2-second boost diode; din1 — first diode; din 2-second diode; din 3-third diode; s1-a first half-bridge module; S1H-upper switch tube; S1L-lower switch tube; s2 — a second half-bridge module; S2H-upper switch tube; S2L-lower switch tube; cbus-energy storage capacitor; d1 — first anti-reflux diode; d2 — second anti-reflux diode; cdcoff-first blocking capacitance; a Filter module; cin — input capacitance.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all embodiments of the present invention. The components of embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the present invention, presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be obtained by a person skilled in the art without inventive step based on the embodiments of the present invention, are within the scope of protection of the present invention.
It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined and explained in subsequent figures.
Furthermore, the appearances of the terms "first," "second," and the like, if any, are used solely to distinguish one from another and are not to be construed as indicating or implying relative importance.
It should be noted that the features of the embodiments of the present invention may be combined with each other without conflict.
The inverter circuit is a conversion device capable of converting a direct current signal into an alternating current signal, and is widely applied to occasions such as new energy power generation, uninterruptible power supplies, motor driving and the like. In order to realize electric energy conversion, an input direct-current voltage of the existing voltage type inverter circuit needs to be higher than a peak value of an output voltage.
Therefore, the method adopted in the prior art generally adds a first-stage boosting circuit at the front stage of the inverter circuit, so that the lower direct-current input voltage is boosted to the high-voltage direct current meeting the inversion condition, and then the boosted high-voltage direct current is inverted.
The traditional technical scheme adopts two-stage electric energy conversion, so that the control scheme of the electric energy conversion system is more complex, the stability of the system is reduced, and the volume and the cost of an inverter circuit are increased.
In addition, in order to prevent the short circuit of the dc side power supply of the circuit, the conventional inverter scheme does not allow all the switching tubes in the same bridge arm to be turned on simultaneously, so that a certain dead time must be set for the upper and lower switching tubes between each bridge arm within the alternating on-time. However, the quality of the alternating current output power of the inverter circuit is reduced, the harmonic quality is increased, and especially in high-frequency application occasions, due to the increase of the switching frequency, the large dead time can cause the loss of part of the driving pulses of the power tube, so that the alternating current output by the circuit has serious zero-crossing distortion. To overcome this drawback, a more complicated compensation control scheme is required, which greatly increases the design difficulty of the system.
In order to overcome the application problem of single-stage direct current boosting-inversion and circuit direct connection, a Z-source inverter circuit or various Z-source inverter circuits derived from the Z-source inverter circuit can be adopted, but the inverter circuits at least need two direct current boosting inductors and two energy storage capacitors, the system is large in size and high in cost, the boosting capacity of the circuit is limited by Z-source impedance, and the quality of output waveforms also has certain defects.
In order to solve the above problem, the present invention provides an inverter circuit, please refer to fig. 1, in which fig. 1 shows a schematic diagram of the inverter circuit provided in this embodiment.
The inverter circuit provided by the embodiment comprises a first energy storage module, an inverter bridge and an electromagnetic isolation module. One end of the inverter bridge is electrically connected with the direct-current power supply through the first energy storage module; the other end of the inverter bridge is electrically connected with the electromagnetic isolation module.
The first energy storage module is arranged between the inverter bridge and the positive electrode of the direct-current power supply; in this embodiment, the inverter bridge may be switched between the direct-through state and the non-direct-through state by providing the first energy storage module. The direct connection state refers to a state that upper and lower switching tubes of a certain half bridge module of the inverter bridge are simultaneously conducted, in a traditional inverter circuit, if the upper and lower switching tubes are simultaneously conducted, a power supply is short-circuited, and the switching tubes are burnt out due to overlarge current.
The inverter bridge includes a plurality of half-bridge modules, and in this embodiment, the inverter bridge includes a first half-bridge module and a second half-bridge module, but is not limited thereto, and may further include a greater number of half-bridge modules. The half-bridge modules are used for switching between a through state and a non-through state under the driving of the driving signals so as to convert the direct current electric signals into alternating current electric signals and carry out boosting processing on the signals.
The other end of the inverter bridge is connected with the electromagnetic isolation module so as to send the inverted and boosted electric signals to the electromagnetic isolation module, and the electromagnetic isolation module is used for outputting the alternating current signals converted by the inverter bridge and realizing the electrical isolation of the direct current side input voltage and current and the alternating current side output voltage and current.
According to the inverter circuit, the first energy storage module is arranged, the inverter bridge is charged in a direct-connection state and discharged in a non-direct-connection state, the inverter bridge can be switched between the direct-connection state and the non-direct-connection state, inversion and boosting of signals are achieved, meanwhile, the converted signals are output to an alternating current side through the electromagnetic isolation module, voltage and current isolation between the direct current side and the alternating current side can be achieved, and the inverter circuit is protected; compared with the traditional multi-stage boosting inverter circuit, the inverter circuit system provided by the embodiment has a simpler structure and is easy to realize.
In a possible implementation manner, the first energy storage module includes at least one energy storage inductor, and the energy storage inductor is disposed between the positive electrode of the dc power supply and the inverter bridge, so as to implement charging and discharging functions.
The following provides a possible implementation manner of the first energy storage module, where the first energy storage module includes: the first boost inductor, the second boost inductor, the first diode, the second diode and the third diode.
The anode of the first diode is electrically connected with the second end of the first boosting inductor; the cathode of the first diode is electrically connected with the second end of the second boost inductor; the anode of the second diode is electrically connected with the first end of the first boosting inductor; the cathode of the second diode is electrically connected with the first end of the second boosting inductor; the anode of the third diode is electrically connected with the second end of the first boosting inductor, and the cathode of the third diode is electrically connected with the first end of the second boosting inductor.
It should be noted that the foregoing is only an example of the first energy storage module provided in this embodiment, and the first energy storage module provided in this embodiment may also be in other implementation forms, which is not limited in this embodiment.
In an embodiment, the inverter bridge includes a first half-bridge module and a second half-bridge module; the first half-bridge module comprises an upper switch tube and a lower switch tube; the second half-bridge module comprises an upper switch tube and a lower switch tube. The upper and lower switching tubes of the first half-bridge module and the second half-bridge module are used for conducting regular conduction or disconnection under the control of a driving signal, so that electric energy conversion from low-voltage direct current input to high-frequency alternating current output under the condition of high-frequency conversion is realized.
The inverter circuit further comprises an energy storage capacitor, wherein the first end of the energy storage capacitor is electrically connected with the input end of the upper switch tube of the second half-bridge module, and the second end of the energy storage capacitor is electrically connected with the output end of the lower switch tube of the first half-bridge module.
The energy storage capacitor is used for charging when the first energy storage module discharges, absorbing energy of the first energy storage module and the direct-current power supply, and releasing the absorbed energy to an alternating-current side when the first energy storage module charges so as to maintain voltage balance between the input end of the inverter bridge and a reference ground.
In order to prevent the electric energy on the ac side from flowing backward to the dc side, in this embodiment, the inverter circuit further includes a first anti-reflux diode and a second anti-reflux diode.
The anode of the first anti-reflux diode is electrically connected with the input end of the upper switch tube of the first half-bridge module; the negative electrode of the first anti-reflux diode is electrically connected with the input end of the upper switching tube of the second half-bridge module; and is also electrically connected to the first terminal of the energy storage capacitor.
The positive electrode of the second anti-reflux diode is electrically connected with the output end of the lower switching tube of the first half-bridge module and is also electrically connected with the second end of the energy storage capacitor; and the cathode of the second anti-reflux diode is electrically connected with the output end of the lower switching tube of the second half-bridge module.
In one possible implementation, the electromagnetic isolation module is a transformer; the inverter bridge is connected to the primary side of the transformer, and the secondary side of the transformer is connected to the load side (ac side), so that electric energy is output to the ac side through the transformer.
Because the inverter circuit generates a dc offset in the working process, the dc offset can be output to a load without a transformer, and cannot be superimposed, so that the dc offset can be ignored, but in the scheme provided in this embodiment, the electromagnetic isolation module is used to realize electrical isolation between the dc side and the ac side, the dc offset can be continuously superimposed on the primary side of the transformer, so that magnetic flux saturation occurs, and in order to avoid the above problem, the inverter circuit is further provided with a first dc blocking capacitor, and a first end of the first dc blocking capacitor is electrically connected to a middle node of the first half-bridge module; the second end of the first blocking capacitor is electrically connected with the middle node of the second half-bridge module through the primary side of the transformer; the middle node refers to a connection point of an upper switching tube and a lower switching tube of a bridge arm; the first blocking capacitor is used for suppressing a direct current component in a pulse voltage signal output by the middle node of the first half-bridge module and the middle node of the second half-bridge module.
In a possible implementation manner, the inverter circuit further includes a filtering module, an input end of the filtering module is electrically connected to a secondary side of the transformer, an output end of the filtering module is electrically connected to the load, and the filtering module is configured to filter a high-frequency harmonic component in a high-frequency pulse signal output by the transformer and output a regular sine wave electrical signal to the load.
In one possible implementation manner, the inverter circuit further includes an input capacitor, a first end of the input capacitor is electrically connected to a positive electrode of the input power supply, and a second end of the input capacitor is electrically connected to a negative electrode of the input power supply. The input capacitor is used for absorbing the peak voltage output by the direct current power supply, so that the waveform of the direct current signal output by the direct current power supply is smoother.
The operation principle of the inverter circuit provided in this embodiment is exemplarily described below with reference to the drawings. In this embodiment, the inverter bridge includes a first half-bridge module and a second half-bridge module, where the first half-bridge module and the second half-bridge module can operate in a pass-through state and a non-pass-through state, and the following describes the operating states in the pass-through state and the non-pass-through state respectively, please refer to fig. 2A to 2D, which show different operating states in four pass-through states respectively.
State 1: as shown in fig. 2A, in this stage, the first half-bridge module is in the through state, the upper switch transistor S1H and the lower switch transistor S1L of the first half-bridge module are turned on, and the lower switch transistor S2L of the second half-bridge module is turned on. At this time, the first boost inductor Lin1 and the second boost inductor Lin2 in the first energy storage module charge and store energy, and the terminal voltage of the first boost inductor Lin1 and the terminal voltage of the second boost inductor Lin2 are equal to the voltage Vin of the direct-current power supply. On the one hand, the current flows from the direct current power supply, and a voltage boosting loop is formed by the first energy storage module, the upper switch tube S1H of the first half-bridge module and the lower switch tube S1L of the first half-bridge module. On the other hand, the lower switch tube S1L of the first half-bridge module, the blocking capacitor Cdcoff and the lower switch tube S2L of the second half-bridge module form a freewheeling circuit on the primary side of the electromagnetic isolation module T1, and the current flows from the blocking capacitor Cdcoff to the lower switch tube S2L of the second half-bridge module through the primary side of the electromagnetic isolation module to form a freewheeling circuit.
State 2: as shown in fig. 2B, in this stage, the first half-bridge module is in the through state, the upper switch transistor S1H and the lower switch transistor S1L of the first half-bridge module are turned on, and the upper switch transistor S2H of the second half-bridge module is turned on. On the one hand, the first boost inductor Lin1 and the second boost inductor Lin2 in the first energy storage module charge and store energy, and the terminal voltages of the first boost inductor Lin1 and the second boost inductor Lin2 are equal to the voltage Vin of the direct current power supply. On the other hand, the first energy storage capacitor Cbus discharges energy from the electromagnetic isolation module T1 to the output side via the lower switching tube S1L of the first half-bridge module, the dc blocking capacitor Cdcoff and the upper switching tube S2H of the second half-bridge module. The current flows from the dc blocking capacitor Cdcoff through the lower switching tube S1L of the first half-bridge module, the energy storage capacitor Cbus, the upper switching tube S2H of the second half-bridge module, through the primary side of the electromagnetic isolation module T1, and back to the dc blocking capacitor Cdcoff.
State 3: as shown in fig. 2C, in this stage, the second half-bridge module is in the through state, in which the lower switch S1L of the first half-bridge module is turned on, and the upper switch S2H and the lower switch S2L of the second half-bridge module are turned on. The first boost inductor Lin1 and the second boost inductor Lin2 in the first energy storage module charge and store energy, and the voltage at the end of the first boost inductor Lin1 and the voltage at the end of the second boost inductor Lin2 are equal to the voltage Vin of the direct-current power supply. The current flows from the direct current power supply through the first energy storage module, the first anti-reflux diode D1, the upper switch tube S2H of the second half-bridge module and the lower switch tube S2L to the ground.
On the other hand, the first energy storage capacitor Cbus discharges energy from the electromagnetic isolation module T1 to the output side through the lower switch tube S1L of the first half-bridge module, the blocking capacitor Cdcoff and the upper switch tube S2H of the second half-bridge module.
And 4: as shown in fig. 2D, in this stage, the second half-bridge module is in the through state, in which the upper switch S1H of the first half-bridge module is turned on, and the upper switch S2H and the lower switch S2L of the second half-bridge module are turned on. On the one hand, the first boost inductor Lin1 and the second boost inductor Lin2 in the first energy storage module charge and store energy, and the terminal voltage of the first boost inductor Lin1 and the terminal voltage of the second boost inductor Lin2 are equal to the voltage Vin of the direct-current power supply.
On the other hand, the upper switch tube S1H of the first half-bridge module, the dc blocking capacitor Cdcoff and the upper switch tube S2H of the second half-bridge module form a freewheeling circuit on the primary side of the electromagnetic isolation module T1.
The above description describes the operation of the inverter circuit in the through state, and the following description describes the operation of the inverter circuit in the non-through state, and correspondingly, in the non-through state, the inverter circuit also includes four operation states, please refer to fig. 3A to 3D:
state 1: as shown in fig. 3A, during this phase, the upper switch S1H of the first half-bridge module is turned on, and the upper switch S2H of the second half-bridge module is turned on. On the one hand, the first boost inductor Lin1 and the second boost inductor Lin2 in the first energy storage module start to provide energy to the energy storage capacitor Cbus, and the energy storage capacitor Cbus stores energy. The current passes through the first energy storage module and the first anti-reflux diode from the direct current power supply and charges the energy storage capacitor Cbus.
On the other hand, the upper switch tube S1H of the first half-bridge module, the dc blocking capacitor Cdcoff and the upper switch tube S2H of the second half-bridge module form a freewheeling circuit on the primary side of the electromagnetic isolation module T1. The current passes through the first anti-reflux diode, the upper switch tube S2H of the second half-bridge module, the primary side of the electromagnetic isolation module T1, the blocking capacitor Cdcoff and then reaches the upper switch tube S1H of the first half-bridge module.
State 2: as shown in fig. 3B, during this phase, the upper switch S1H of the first half-bridge module is turned on, and the lower switch S2L of the second half-bridge module is turned on. On the one hand, the first boost inductor Lin1 and the second boost inductor Lin2 in the dc power supply and the first energy storage module start to provide energy to the energy storage capacitor Cbus, and the first energy storage capacitor Cbus stores energy. The current flows from the direct current power supply through the first energy storage module, the first anti-reflux diode, the energy storage capacitor Cbus and the second anti-reflux diode to form a loop reversely, and the energy storage capacitor Cbus is charged.
On the other hand, the first input dc power source Uin discharges energy from the electromagnetic isolation module T1 to the output side through the upper switch tube S1H of the first half-bridge module, the dc blocking capacitor Cdcoff, and the lower switch tube S2L of the second half-bridge module. The current passes through the energy storage capacitor Cbus, the second anti-reflux diode, the lower switch tube S2L of the second half-bridge module, the primary side of the electromagnetic isolation module T1, and the dc blocking capacitor Cdcoff from the first anti-reflux diode to the upper switch tube S1H of the first half-bridge module to form a discharge loop.
State 3: as shown in fig. 3C, during this phase, the lower switch S1L of the first half-bridge module is turned on, and the upper switch S2H of the second half-bridge module is turned on. On the one hand, the dc power supply and the first boost inductor Lin1 and the second boost inductor Lin2 in the first energy storage module start to provide energy to the energy storage capacitor Cbus, and the energy storage capacitor Cbus stores energy. On the other hand, the dc power supply discharges energy from the electromagnetic isolation module T1 to the output side through the lower switching tube S1L of the first half-bridge module, the dc blocking capacitor Cdcoff, and the upper switching tube S2H of the second half-bridge module.
And 4: as shown in fig. 3D, during this stage, the lower switch S1L of the first half-bridge module is turned on, and the lower switch S2L of the second half-bridge module is turned on. On the one hand, the first boost inductor Lin1 and the second boost inductor Lin2 in the first energy storage module provide energy to the energy storage capacitor Cbus, and the energy storage capacitor Cbus stores energy. On the other hand, the lower switch tube S1L of the first half-bridge module, the dc blocking capacitor Cdcoff and the lower switch tube S2L of the second half-bridge module form a freewheeling circuit on the primary side of the electromagnetic isolation module T1.
In this embodiment, the upper switch tube S1H and the lower switch tube S1L of the first half-bridge module, and the upper switch tube S2H and the lower switch tube S2L of the second half-bridge module are turned on or off regularly under the control of the driving signal, so as to achieve voltage boosting and inversion conversion.
The following provides one possible inverter circuit modulation scheme.
Modulating the inverter circuit comprises the following signals: the first and second half-bridge modules comprise a first carrier input signal Vtri1, a second carrier input signal Vtri2, a first modulated wave input signal Vsine1, a second modulated wave input signal Vsine2, a third modulated wave input signal Vshoot1, a fourth modulated wave input signal Vshoot2, first to sixth comparison modules Comp1 to Comp6, a first combinational logic module Log1, a second combinational logic module Log2, and first and second half-bridge modules up and down switching tube driving signals Vgs1H, Vgs1L, Vgs2H and Vgs 2L.
In one possible implementation, the first carrier input signal Vtri1 and the second carrier input signal Vtri2 are 90 ° out of phase, and the first carrier input signal Vtri1 and the second carrier input signal Vtri2 may be saw-tooth wave signals or left-right symmetric triangular waves; the first and second modulated wave input signals Vsine1 and Vsine2 are different in phase by 180 °, the first and second modulated wave input signals Vsine1 and Vsine2 are both sine wave signals, and the third and fourth modulated wave input signals Vshoot1 and Vshoot2 are direct current signals having opposite amplitudes.
The first modulated wave input signal Vsine1 and the first carrier input signal Vtri1 pass through a first comparison module Comp1 to generate a first sinusoidal pulse width signal Vspwm 1; the third modulated wave input signal Vshoot1 and the first carrier input signal Vtri1 pass through a second comparison module Comp2 to generate a first fixed pulse width signal Vpwm1, and the fourth modulated wave input signal Vshoot2 and the first carrier input signal Vtri1 pass through a third comparison module Comp3 to generate a second fixed pulse width signal Vpwm 2.
The second modulated wave input signal Vsine2 and the second carrier input signal Vtri2 are passed through a fourth comparison module Comp4 to generate a second sinusoidal pulse width signal Vspwm2, the third modulated wave input signal Vshoot1 and the second carrier input signal Vtri2 are passed through a fifth comparison module Comp5 to generate a third fixed pulse width signal Vpwm3, and the fourth modulated wave input signal Vshoot2 and the second carrier input signal Vtri2 are passed through a sixth comparison module Comp6 to generate a fourth fixed pulse width signal Vpwm 4.
In a possible implementation manner, the first to sixth comparing modules may be most common voltage comparators, such as LM339, LM311, and the like, which is not limited in this embodiment.
The first sinusoidal pulse width signal Vspwm1, the first fixed pulse width signal Vpwm1, and the second fixed pulse width signal Vpwm2 generate first half-bridge block upper and lower switch tube driving signals Vgs1H, Vgs1L through the first combinational logic block Log 1. The second sinusoidal pulse width signal Vspwm2, the third fixed pulse width signal Vpwm3, and the fourth fixed pulse width signal Vpwm4 generate the second half-bridge module upper and lower switching tube driving signals Vgs2H, Vgs2L through the second combinational logic module Log 2.
Referring to fig. 4, taking the second combinational logic module as an example, the second combinational logic module Log2 may adopt an implementation manner shown in fig. 4, which includes: a first logic input signal a, a second logic input signal B, a third logic input signal C, first and second logic output signals Dri1, Dri2, and a number of not gates and or gate units. The first logic input signal a is electrically connected to the second fixed pulse width signal Vpwm2 (or the fourth fixed pulse width signal Vpwm4), the second logic input signal B is connected to the first fixed pulse width signal Vpwm1 (or the third fixed pulse width signal Vpwm3), the third logic input signal C is connected to the first sinusoidal pulse width signal Vspwm1 (the second sinusoidal pulse width signal Vspwm2), and the first and second logic output signals Dri1 and Dri2 are connected to the first half-bridge block up and down switch driving signals Vgs1H and Vgs1L (or the second half-bridge block up and down switch driving signals Vgs2H and Vgs 2L).
According to the driving signal and the working characteristics of the upper and lower switch tubes of the first and second half-bridge modules of the inverter circuit, the inverter circuit comprises: referring to fig. 2A to 2D, when the dc power supply charges the first energy storage module, that is, when the first boost inductor Lin1 and the second boost inductor Lin2 are charged, vrin 1 is equal to vrin 2 is equal to Vin, where vrin 1 refers to the voltage across the first boost inductor Lin1, vrin 2 refers to the voltage across the second boost inductor Lin2, and Vin refers to the voltage of the dc power supply.
Referring to fig. 3A to 3D, when the first boost inductor Lin1 and the second boost inductor Lin2 are discharged in series, vLin1 is equal to vLin2 is equal to 0.5 (Vin-Vcbus), where Vcbus refers to the voltage of the energy storage capacitor Cbus.
By utilizing the voltage-second balance of the inductor, the voltage gain of the first energy storage capacitor is as follows:
in the above formula, dshootAnd when the switching tube is in a through state, the through duty ratios of the upper switching tube and the lower switching tube of the first half-bridge module and the second half-bridge module are respectively set.
If the voltage transfer ratio of the electromagnetic isolation module T1 is N, the transfer relationship between the voltage Vin of the dc power source and the output voltage Vo of the load end is as follows:
that is, the boost factor B of the inverter circuit provided in this embodiment is:
wherein M is the voltage modulation ratio of the first modulated wave input signal Vsine1 (or the second modulated wave input signal Vsine2), and M is less than or equal to 1-0.5dshoot。
Referring to fig. 5, fig. 5 shows that M is 1-0.5dshootWhen N is equal to 1, the input/output voltage gain at different through duty ratios is always greater than 1 when the through duty ratio changes, so the inverter circuit provided by this embodiment has a boost inversion function, and if M is adjusted at the same time, the inverter circuit has a boost-buck inversion function. In another possible implementation, the step-up or step-down adjustment may also be performed by changing the voltage transfer ratio N of the electromagnetic isolation module T1.
Referring to fig. 6, fig. 6 is a schematic diagram of a control system provided in the present embodiment, where the control system is used to implement driving and controlling of the inverter circuit provided in the present embodiment. The control system includes: a first input signal v1, a second input signal v2, a third input signal v3, a first output signal vsine, a second output signal vshoot and a micro control processor MicroCPU. The first input signal v1, the second input signal v2 and the third input signal v3 are inverter circuit voltage and current signals which are processed by a sampling-filtering unit and then output, the first output signal vsine and the second output signal vshoot are control signals sent to a modulation circuit, and the micro control processor micro CPU is responsible for outputting the control signals after the input signals are subjected to operation processing such as phase-locked loop, d-q conversion, active-reactive power compensation, adjusting unit and d-q inverse conversion.
In one possible implementation, the upper switching tube SnH and the lower switching tube SnL of each half-bridge module are integrally provided in a single package and connected as shown in fig. 7, with both the upper tube SnH and the lower tube SnL mounted within the package, with their respective insulating or semi-insulating substrates in contact with the package base 40. The source electrode 43' of the lower tube SnL is electrically connected to a conductive structural portion of the package, such as the package base 40, or may also be alternatively electrically connected to the source lead 103 of the package, such as by a conductive bond wire 31. The gate 41 of the top tube SnH is electrically connected to the gate lead 102 of the package, for example, by a conductive bond wire 32. The gate electrode 41' of the lower tube SnL may be electrically connected to the lead 101 of the package, such as by a conductive bond wire 33. The source electrode 43 of the top tube SnH is electrically connected to the drain electrode 42' of the bottom tube SnL, such as by a conductive bond wire 34. The source electrode 43 of the top tube SnH and the drain electrode 42' of the bottom tube SnL are both electrically connected to the middle lead 104 of the package, such as by wire bonding one or both of these electrodes to the middle lead, for example by conductive bond wire 35. The drain electrode 42 of the top tube SnH is electrically connected to the drain lead 105 of the package, such as by a conductive bond wire 36.
The half-bridge module adopting integrated packaging can reduce wiring, reduce parasitic parameters of circuit leads, improve working frequency and reduce the size of the filter module.
In one possible implementation, the upper switching tube SnH and the lower switching tube SnL of each half-bridge module are group III-N nitride transistors (III-N), which may be Field Effect Transistors (FETs), such as High Electron Mobility Transistors (HEMTs), Heterojunction Field Effect Transistors (HFETs), POLFETs, JFETs, MESFETs, CAVETs, or any other III-N transistor structure suitable for power switching applications.
In some embodiments, the III-N transistor is an enhancement mode (E-type) device, as shown in fig. 8A, i.e., a normally off device, such that the threshold voltage is greater than 0V, e.g., about 1.5V-2V or greater than 2V, without a reverse body diode when the enhancement mode (E-type) device is employed, which may reduce conduction losses of the power supply apparatus when the device continues to flow in the reverse direction. In other embodiments, the III-N transistor is formed by cascading a high voltage III-N depletion mode (D-mode) transistor and a low voltage enhancement mode (E-mode) transistor, as shown in fig. 8B, the depletion mode (D-mode) device, i.e., a normally-on device, such that the threshold voltage is less than 0V, and the low voltage enhancement mode (E-mode) transistor may be a low voltage Si MOS device, and in some embodiments, the III-N transistor of fig. 8B further includes an external anti-parallel diode for reducing the reverse recovery loss of the device, as shown in fig. 8C.
In some embodiments, the III-N transistor is a high voltage switching transistor. As used herein, a high voltage switching transistor is a transistor optimized for high voltage switching applications. That is, when the transistor is turned off, it is able to block high voltages, such as about 300V, or more about 600V, or more about 1200V, or more, and when the transistor is on, it has a sufficiently low on-resistance (Rdson) for the above-mentioned application, i.e., when a large amount of current is passed through the device, a lower on-loss is achieved.
Referring to fig. 9, fig. 9 shows a schematic flow chart of a modulation method provided in this embodiment.
The modulation method comprises the following steps:
step 110: and comparing the first modulated wave input signal, the third modulated wave input signal and the fourth modulated wave input signal with the first carrier wave input signal respectively to generate a first sinusoidal pulse width signal, a first fixed pulse width signal and a second fixed pulse width signal.
The third modulation wave input signal and the fourth modulation wave input signal are direct current signals with opposite amplitudes.
Step 120: and comparing the second modulated wave input signal, the third modulated wave input signal and the fourth modulated wave input signal with the second carrier signal respectively to generate a second sinusoidal pulse width signal, a third fixed pulse width signal and a fourth fixed pulse width signal.
The first modulation wave input signal and the second modulation wave input signal are both sine wave signals, and the phase difference is 180 degrees.
Step 130: and generating a first half-bridge module upper switch tube driving signal Vgs1H and a first half-bridge module lower switch tube driving signal Vgs1L through a first combinational logic module according to the first sinusoidal pulse width signal, the first fixed pulse width signal and the second fixed pulse width signal.
Step 140: and generating a second half-bridge module upper switch tube driving signal Vgs2H and a second half-bridge module lower switch tube driving signal Vgs2L through a second combinational logic module according to the second sinusoidal pulse width signal, the third fixed pulse width signal and the fourth fixed pulse width signal.
Step 150: and driving the switch tube to be switched on or switched off according to the first half-bridge module upper switch tube driving signal Vgs1H, the first half-bridge module lower switch tube driving signal Vgs1L, the second half-bridge module upper switch tube driving signal Vgs2H and the second half-bridge module lower switch tube driving signal Vgs2L so as to switch the first half-bridge module or the second half-bridge module between a through state and a non-through state.
It should be noted that the steps 110 to 120 have no logical precedence relationship, and the two steps can be executed simultaneously or any step is executed first; similarly, step 130 and step 140 have no logical precedence, and they may be executed simultaneously or any step may be executed first.
And modulating and driving the inverter circuit according to the modulation method, wherein the boost factor of the modulation method is as follows:
when the dsboot is in a through state, the through duty ratios of upper and lower switching tubes of the first half-bridge module and the second half-bridge module are respectively equal to or higher than the upper and lower switching tubes of the first half-bridge module and the second half-bridge module; n is the voltage transmission ratio of the electromagnetic isolation module; and M is the voltage modulation ratio of the first or second modulation wave input signal, wherein M is less than or equal to 1-0.5 dshoot.
Referring to fig. 9A, fig. 9A is a schematic diagram of the input voltage Vin of the dc power supply of the inverter circuit and the voltage Vo of the load Rl, and it can be seen that the input voltage is much lower than the output voltage, and the output voltage has good sine degree. Therefore, compared with the traditional two-stage boosting inversion, the inverter circuit can save one-stage power conversion under the same power grade, reduce the system volume and cost and improve the electric energy conversion efficiency.
Fig. 9B shows voltages of the energy storage capacitor Cbus and the blocking capacitor Cdcoff of the inverter circuit, and it can be seen that a terminal voltage vcdccoff of the blocking capacitor Cdcoff is far lower than the voltage Vcbus of the energy storage capacitor Cbus, so that the blocking capacitor Cdcoff can select a capacitor with a lower withstand voltage, and the system volume is reduced.
Fig. 9C shows the input current and the output current of the inverter circuit, and it can be seen that the current output by the inverter circuit has high sine degree and low harmonic content, and meets the application requirements.
The invention also provides electric equipment which comprises the inverter circuit.
In summary, compared with the conventional two-stage boost inverter, the inverter circuit and the modulation method provided by the invention have the advantages that the system component composition is greatly reduced, the system volume and the design cost can be reduced, and the power conversion efficiency is improved. In addition, a through state is allowed between the bridge arms, and the input side and the output side are electrically isolated, so that the system reliability is improved, and the EMI is reduced. The half-bridge module which is packaged integrally is adopted to reduce the parasitic parameters of the circuit lead, improve the working frequency and reduce the volume of the filter element; compared with a two-stage structure, the inverter circuit needs to realize the boosting and inverting functions of the front stage and the rear stage at the same time, the control structure is complex, the inverter circuit only needs to realize the control of one-stage power conversion, and the control structure is simple.
The above description is only an embodiment of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are included in the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the appended claims.
Claims (10)
1. An inverter circuit, comprising: the system comprises a first energy storage module, an inverter bridge and an electromagnetic isolation module;
one end of the inverter bridge is electrically connected with a direct current power supply through the first energy storage module; the other end of the inverter bridge is electrically connected with the electromagnetic isolation module;
the first energy storage module is arranged between the inverter bridge and the positive electrode of the direct-current power supply;
the first energy storage module is used for storing energy input by the direct-current power supply when the inverter bridge works in a direct-current state, and the first energy storage module is also used for releasing the stored energy when the inverter bridge works in a non-direct-current state;
the inverter bridge comprises a plurality of half-bridge modules, and the half-bridge modules are used for switching between a direct-connection state and a non-direct-connection state under the driving of a driving signal so as to convert a direct-current electric signal into an alternating-current electric signal and boost the signal;
the electromagnetic isolation module is used for outputting the alternating current signal converted by the inverter bridge and realizing the electrical isolation of the input voltage and current at the direct current side and the output voltage and current at the alternating current side.
2. The inverter circuit according to claim 1, wherein the first energy storage module comprises a first boost inductor, a second boost inductor, a first diode, a second diode, and a third diode;
the anode of the first diode is electrically connected with the second end of the first boosting inductor; the cathode of the first diode is electrically connected with the second end of the second boosting inductor;
the anode of the second diode is electrically connected with the first end of the first boosting inductor; the cathode of the second diode is electrically connected with the first end of the second boosting inductor;
the anode of the third diode is electrically connected with the second end of the first boost inductor, and the cathode of the third diode is electrically connected with the first end of the second boost inductor.
3. The inverter circuit according to claim 1, wherein the inverter bridge comprises a first half-bridge module and a second half-bridge module; the first half-bridge module and the second half-bridge module respectively comprise an upper switch tube and a lower switch tube;
the upper and lower switching tubes of the first half-bridge module are integrally arranged; and the upper and lower switching tubes of the second half-bridge module are integrally arranged.
4. The inverter circuit according to claim 3, further comprising a first anti-reflux diode and a second anti-reflux diode;
the anode of the first anti-reflux diode is electrically connected with the input end of the upper switching tube of the first half-bridge module; the negative electrode of the first anti-reflux diode is electrically connected with the input end of the upper switching tube of the second half-bridge module;
the anode of the second anti-reflux diode is electrically connected with the output end of the lower switching tube of the first half-bridge module, and the cathode of the second anti-reflux diode is electrically connected with the output end of the lower switching tube of the second half-bridge module;
the first anti-reflux diode and the second anti-reflux diode are used for preventing the current on the alternating current side from flowing backwards.
5. The inverter circuit according to claim 4, further comprising a storage capacitor, wherein the storage capacitor comprises a first terminal and a second terminal;
the first end of the energy storage capacitor is electrically connected with the cathode of the first anti-reflux diode; the second end of the energy storage capacitor is connected with the anode of the second anti-reflux diode;
the energy storage capacitor is used for absorbing energy of the first energy storage module and the direct current power supply and outputting the absorbed energy to an alternating current side.
6. The inverter circuit according to claim 4, wherein the electromagnetic isolation module is a transformer; the inverter bridge is connected with the primary side of the transformer so as to transmit electric energy to an alternating current side through the transformer;
the inverter circuit further comprises a first blocking capacitor;
the first end of the first blocking capacitor is electrically connected with the middle node of the first half-bridge module; the second end of the first blocking capacitor is electrically connected with the middle node of the second half-bridge module through the primary side of the transformer; the middle node refers to a connection point of an upper switching tube and a lower switching tube of the half-bridge module;
the first blocking capacitor is used for suppressing a direct current component in a pulse voltage signal output by an intermediate node of the first half-bridge module and the second half-bridge module.
7. The inverter circuit of claim 6, further comprising a filtering module;
the filtering module is electrically connected with the secondary side of the transformer;
the filtering module is used for filtering high-frequency harmonic components in the high-frequency pulse signals output by the transformer.
8. The inverter circuit according to claim 1, further comprising an input capacitor having a first terminal electrically connected to a positive terminal of an input power source; and the second end of the input capacitor is electrically connected with the negative electrode of the input power supply.
9. A modulation method applied to the inverter circuit according to any one of claims 1 to 8, the modulation method comprising:
comparing the first modulated wave input signal, the third modulated wave input signal and the fourth modulated wave input signal with the first carrier wave input signal respectively to generate a first sine pulse width signal, a first fixed pulse width signal and a second fixed pulse width signal; the third modulation wave input signal and the fourth modulation wave input signal are direct current signals with opposite amplitudes;
comparing the second modulated wave input signal, the third modulated wave input signal and the fourth modulated wave input signal with a second carrier signal respectively to generate a second sinusoidal pulse width signal, a third fixed pulse width signal and a fourth fixed pulse width signal; the first modulation wave input signal and the second modulation wave input signal are both sine wave signals, and the phase difference is 180 degrees;
generating a first half-bridge module upper switch tube driving signal Vgs1H and a first half-bridge module lower switch tube driving signal Vgs1L through a first combinational logic module according to the first sine pulse width signal, the first fixed pulse width signal and the second fixed pulse width signal;
generating a second half-bridge module upper switch tube driving signal Vgs2H and a second half-bridge module lower switch tube driving signal Vgs2L through a second combinational logic module according to the second sinusoidal pulse width signal, the third fixed pulse width signal and the fourth fixed pulse width signal;
and driving the switch tube to be switched on or switched off according to the first half-bridge module upper switch tube driving signal Vgs1H, the first half-bridge module lower switch tube driving signal Vgs1L, the second half-bridge module upper switch tube driving signal Vgs2H and the second half-bridge module lower switch tube driving signal Vgs2L so as to switch the first half-bridge module or the second half-bridge module between a through state and a non-through state.
10. The modulation method according to claim 9, wherein the boost factor of the modulation method is:
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