CN114122185A - Short-wave double-color infrared detector and preparation method thereof - Google Patents
Short-wave double-color infrared detector and preparation method thereof Download PDFInfo
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PIN type
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
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- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
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- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
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Abstract
The invention provides a short-wave double-color infrared detector, which comprises: the avalanche multiplication unit comprises a second N-type layer, an avalanche multiplication layer and a second P-type layer which are sequentially stacked on the surface of the first N-type layer, wherein the second N-type layer, the avalanche multiplication layer and the second P-type layer comprise materials of which the ratio of a material hole ionization coefficient to a material electron ionization coefficient is smaller than a preset value. The invention adopts a PINNIP type back-to-back double-diode structure, and can realize the functions of detecting short-wavelength infrared light and measuring distance by bias polarity modulation.
Description
Technical Field
The invention belongs to the field of infrared photoelectric materials and devices, and particularly relates to a short-wave double-color infrared detector and a preparation method thereof.
Background
The short wave infrared detector is widely applied in the military and national fields, and can enable people to carry out high-resolution observation and discrimination under the condition of near darkness or complete darkness in the military field, and implement target acquisition, monitoring and tracking; in the civil field, the unmanned aerial vehicle, the security monitoring and the like play an extremely important role. The short-wave infrared detection mode is divided into an active mode and a passive mode, the active mode uses laser and a detector as a core photoelectric device for distance measurement, communication and the like, and the passive mode uses the detector as a core photoelectric device for night vision and the like. In practical application, the active mode and the passive mode are often integrated together to form a total detection system to acquire different information of a target, so that the anti-interference performance and the recognition capability are improved, the false alarm rate is reduced, and the like. However, the existing detection system only splices devices with different functions together, so that the miniaturization of the device is difficult to realize, and the cost of the detection system is increased.
Disclosure of Invention
Technical problem to be solved
Aiming at the technical problems in the prior art, the invention provides a short-wave double-color infrared detector and a preparation method thereof, which are used for at least partially solving the technical problems.
(II) technical scheme
As an aspect of the present invention, there is provided a short-wave dual-color infrared detector including: the avalanche multiplication unit comprises a second N-type layer, an avalanche multiplication layer and a second P-type layer which are sequentially stacked on the surface of the first N-type layer, wherein the second N-type layer, the avalanche multiplication layer and the second P-type layer comprise materials of which the ratio of a material hole ionization coefficient to a material electron ionization coefficient is smaller than a preset value.
Optionally, the cutoff wavelength of the AlInAsSb and InGaAsSb quaternary alloy material is 1-3 μm.
Optionally, the preset value is 0.1.
Optionally, the material with the ratio of the hole ionization coefficient to the electron ionization coefficient smaller than the preset value includes at least one of an AlInAsSb digital alloy material, an AlInAsSb bulk material, an AlGaAsSb digital alloy material, and an AlGaAsSb bulk material.
Optionally, the band gap widths of the AlInAsSb digital alloy material and the AlInAsSb body material are 0.998-1.323eV, and the cut-off wavelength is 0.93-1.24 μm; the band gap widths of the A1GaAsSb digital alloy material and the A1GaAsSb material are 0.998-1.245eV, and the cut-off wavelength is 0.995-1.24 mu m.
Optionally, an annular metal lower electrode is arranged on the outer side of the first P-type layer, a P-type cover layer is arranged on the surface of the second P-type layer, and an annular metal upper electrode is arranged on the surface of the P-type cover layer.
Optionally, a vulcanized layer is arranged on the outer surfaces of the short wave infrared unit, the avalanche multiplication unit and the P-type cover layer and between the metal upper electrode and the metal lower electrode.
Optionally, a passivation layer is formed on the surface of the vulcanized layer.
The invention also provides a preparation method applied to the short-wave double-color infrared detector, which comprises the following steps: forming a buffer layer on a substrate, wherein the substrate and the buffer layer are made of GaSb materials, the surface of the buffer layer is sequentially laminated with a first P-type layer, a short-wave absorption layer and a first N-type layer to form a short-wave infrared unit, the materials of the first P-type layer, the short-wave absorption layer and the first N-type layer comprise at least one of AlInAsSb and InGaAsSb quaternary alloy materials, the surface of the first N-type layer is sequentially laminated with a second N-type layer, an avalanche multiplication layer and a second P-type layer to form an avalanche multiplication unit, and the materials of the second N-type layer, the avalanche multiplication layer and the second P-type layer comprise materials, the ratio of a material hole ionization coefficient to a material electron ionization coefficient is smaller than a preset value.
Optionally, the buffer layer formation, the short wave infrared unit preparation and the avalanche multiplication unit preparation are all performed in a molecular beam epitaxy device.
(III) advantageous effects
(1) The invention adopts a PINNIP type back-to-back double-diode structure, and can realize the functions of detecting short-wavelength infrared light and measuring distance by bias polarity modulation.
(2) The AlInAsSb and InGaAsSb quaternary alloy material in the short-wave infrared unit is matched with the GaSb material, the detection wavelength is continuously adjustable in a short-wave range when the short-wave infrared light is detected, and the quantum efficiency is high.
(3) The avalanche multiplication unit material has the characteristics of large difference between the hole ionization rate and the electron ionization rate and small excess noise factor, can better realize a high-gain effect and reduce noise in the distance measurement process, and can be used as an optical filter to absorb light waves below the cut-off wavelength and reduce the interference of visible light and near-infrared short waves on a short-wave infrared unit, wherein the cut-off wavelength range of the avalanche multiplication unit material is controllable.
(4) The method for preparing the short-wave two-color infrared detector by adopting the molecular beam epitaxy equipment can accurately control the growth precision, so that the finally obtained epitaxy structure is consistent with the design value and has good uniformity.
Drawings
FIG. 1 is a schematic cross-sectional view of a short-wave dual-color infrared detector according to an embodiment of the present invention;
fig. 2 schematically shows a flowchart of a manufacturing method applied to a short-wave two-color infrared detector according to an embodiment of the present invention.
[ reference numerals ]
The solar cell comprises a substrate 1, an epitaxial structure 2, a buffer layer 21, a shortwave infrared unit 22, a first P type layer 221, a shortwave absorption layer 222, a first N type layer 223, an avalanche multiplication unit 23, a second N type layer 231, an avalanche multiplication layer 232, a second P type layer 233, a 24-P type cover layer, a metal upper electrode 3, a light through hole 4, a passivation layer 5, a vulcanized layer 6 and a metal lower electrode 7.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to specific embodiments and the accompanying drawings.
In order that the objects, technical solutions and advantages of the present invention will be more clearly understood, the present invention will be further described in detail below with reference to the accompanying drawings. It is to be understood that the embodiments described are only a few embodiments of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments of the present invention without any inventive step, are within the scope of the present invention.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention; the terms "upper", "lower", "front", "rear", "left", "right", and the like, which indicate the orientation or positional relationship, are based on the orientation or positional relationship shown in the drawings, or the orientation or positional relationship that the claimed product is conventionally placed in use, and are used for convenience in describing and simplifying the description, but do not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and should not be construed as limiting the present application; the terms "comprises," "comprising," and the like, as used herein, specify the presence of stated features, steps, operations, and/or components, but do not preclude the presence or addition of one or more other features, steps, operations, or components.
Aiming at the defects of the prior art, the invention designs a short-wave double-color infrared detector, and the device adopts a PINNIP type back-to-back double-diode structure and can realize the functions of detecting short-wave infrared light and measuring distance by bias polarity modulation; the defects that the existing detection system only splices devices with different functions together, is difficult to realize the miniaturization of equipment and increases the cost of the detection system are overcome.
Fig. 1 schematically shows a schematic cross-sectional structure diagram of a short-wave two-color infrared detector provided by an embodiment of the invention.
As shown in fig. 1, the short-wave two-color infrared detector includes: the short-wave infrared unit 22 comprises a first P-type layer 221, a short-wave absorption layer 222 and a first N-type layer 223 which are sequentially stacked on the surface of the buffer layer 21, and the avalanche multiplication unit 23 comprises a second N-type layer 231, an avalanche multiplication layer 232 and a second P-type layer 233 which are sequentially stacked on the surface of the first N-type layer 223.
In the embodiment of the invention, the substrate 1 material comprises GaSb material, the substrate 1 can adopt an N-type GaSb substrate in the (001) direction, the double surfaces of the substrate are polished, the surface is a crystal plane, and the doping concentration is more than or equal to 1017cm-3The lattice constant of the substrate 1 determines the lattice constant of the other materials being epitaxial.
In the embodiment of the present invention, the buffer layer 21 may Be a P-type doped buffer layer, and the material includes GaSb doped with Be in P-type, wherein the doping concentration of Be is greater than or equal to 1018cm-3The buffer layer 21 has a thickness of 350-1000 nm. The buffer layer 21 acts to smooth the surface of the substrate 1 and to prevent defects of the substrate 1 from growing upward, which is beneficial to improving the epitaxial crystal quality.
In the embodiment of the invention, the shortwave infrared unit 22 is provided with the first P-type layer 221 and the shortwave absorption layer which are sequentially stacked on the surface of the buffer layer 21222. The first N-type layer 223 forms a P-I-N structure, the thickness of the first P-type layer 221 is 400-600nm, Be can Be used as a doping element, and the doping concentration of Be is more than or equal to 1018cm-3(ii) a The short wave absorbing layer 222 has a thickness of 1.5-3 μm. The short wavelength absorption layer 222 is an unintentional doped layer with an undoped carrier concentration of 1014-1016cm-3The thickness of the first N-type layer 223 is 200-600nm, Si can be used as doping, and the doping concentration is more than or equal to 1018cm-3。
The materials of the first P-type layer 221, the short-wave absorption layer 222 and the first N-type layer 223 include at least one of AlInAsSb and ingaasssb quaternary alloy materials. The AlInAsSb and InGaAsSb quaternary alloy material is In lattice matching with the GaSb material, so that the cut-off wavelength of the short-wave infrared unit 22 can be adjusted In a short-wave range by changing Al or In components In the quaternary alloy material, the whole range of 1-3 mu m of short-wave infrared is covered, the adjustment of the cut-off wavelength of the short-wave infrared unit 22 In the short-wave range can be continuously carried out, the quantum efficiency is high, and the detection of short-wave infrared light is more accurate.
In the embodiment of the invention, the second N-type layer 231, the avalanche multiplication layer 232 and the second P-type layer 233 which are sequentially stacked on the surface of the first N-type layer 223 in the avalanche multiplication unit 23 form an N-I-P structure, the thickness of the second N-type layer 231 is 200-600nm, Si can be used as a doping element, and the doping concentration of Si is more than or equal to 1018cm-3The avalanche multiplication layer 232 has a thickness of 1-2 μm, is unintentionally doped, and has a carrier concentration of 10 under undoped condition14-1016cm-3The thickness of the second P-type layer 233 is 200-600nm, and Be can Be used as doping with a doping concentration of not less than 1018cm-3。
The materials of the second N-type layer 231, the avalanche multiplication layer 232 and the second P-type layer 233 include materials having a large difference between the hole ionization coefficient and the electron ionization coefficient and a small excess noise factor, and the materials have multiplication characteristics and have a stable gain of more than 10. The present application defines the ratio of the hole ionization coefficient of a material to the electron ionization coefficient of the material as k, the excess noise increases with increasing gain, but for low k values this rate of increase will be slower, i.e. lower k values will bring lower excess noise, higher receiver sensitivity is obtained, weaker signals are detected, the gain-bandwidth product depends strongly on the k value and carrier transit time, the maximum avalanche set-up time is determined by the transit time of electrons and holes when k is 0, i.e. low k values help to obtain shorter avalanche set-up time, and low k values are also beneficial to obtain higher stable gain, therefore the gain-bandwidth product will necessarily increase. The avalanche multiplication unit 23 material of the embodiment includes at least one of AlInAsSb digital alloy, AlInAsSb bulk material, AlGaAsSb digital alloy, and A1GaAsSb bulk material, and the k value of the material is smaller than a preset value, which may be 0.1, on one hand, it is helpful to obtain a shorter avalanche set-up time, and on the other hand, it is helpful to obtain a higher stable gain.
The Al composition of the AlInAsSb digital alloy and AlInAsSb bulk material may be 0.6 to 0.8, the band gap width may be 0.998 to 1.323eV, the cutoff wavelength may be 0.93 to 1.24 μm (wavelength and band gap conversion formula: 1.24/band gap), and the band gap width of the AlGaAsSb digital alloy and AlGaAsSb bulk material may be 0.998 to 1.245eV, and the cutoff wavelength may be 0.995 to 1.24 μm. The avalanche multiplication element 23 can absorb incident light below the cut-off wavelength and block interference of light below the cut-off wavelength with the short-wave infrared element 22.
In the embodiment of the invention, the surface of the second P-type layer 233 is provided with the P-type cap layer 24, the P-type cap layer 24 is a metal electrode contact layer with a thickness of 20-50nm, and Be can Be doped with GaSb with a doping concentration of 2.0 × 1018-1.0×1019cm-3. The P-type doped cover layer 24 is used for preventing the avalanche multiplication unit 23 in contact with the P-type doped cover layer 24 from directly contacting with air to generate an oxidation reaction, and on the other hand, the P-type doped cover layer 24 is a contact layer of the upper metal electrode 3 of the infrared detector, so that the P-type doped cover layer 24 is also beneficial to the transportation of carriers, and in order to reduce the ineffective absorption of the GaSb material to light below 1.7 mu m, the thickness of the cover layer 24 should be between 20 and 50 nm.
In the embodiment of the invention, the annular metal lower electrode 7 is arranged on the outer side of the first P-type layer 221, the annular metal upper electrode 3 is arranged on the surface of the P-type cover layer 24, and the metal upper electrode 3 and the metal lower electrode 7 are both subjected to electron beam evaporation of Ti/Pt/Au, and the thicknesses of the metal upper electrode 3 and the metal lower electrode 7 can be respectively 50nm/50nm/300 nm. The Ti layer can form good ohmic contact with the metal contact electrode material, and the Au can keep good adhesion and firmness with the following packaging routing.
In an embodiment of the present invention, the short-wave dual-color infrared detector further includes: and the vulcanized layer 6 covers the outer side of the epitaxial structure 2 between the annular metal lower electrode 7 and the annular metal upper electrode 3, and has the thickness of 25-35 nm. The vulcanized layer 6 can fill unsaturated dangling bonds generated by etching the side wall of the back step, so that the surface state density is reduced, and the surface leakage current is reduced.
And the passivation layer 5 is formed on the outer side of the vulcanized layer 6 and has the thickness of 150-250 nm. The passivation layer 5 can isolate the vulcanized layer 6 from air, so that the vulcanized layer 6 has lasting stability, and the stability of the device is improved.
In the embodiment of the invention, the annular metal upper electrode 3 is hollowed to form the light through hole 4, the light through hole 4 penetrates through the passivation layer 5 and the vulcanized layer 6 and is used for receiving an external infrared signal input into the infrared detector, and the light through hole 4 can be any one of circular, oval, square, triangular or other polygonal structures.
Fig. 2 schematically shows a flow chart of a preparation method applied to a short-wave double-color infrared detector provided by the invention.
As shown in fig. 2, the method may for example comprise steps S101-S107.
In step S101, a buffer layer 21 is stacked on the surface of the substrate 1.
Specifically, the substrate 1 needs to be pretreated before preparing the buffer layer 21. The pre-processing procedure may include, for example: degassing and deoxidizing, wherein degassing comprises low temperature degassing and high temperature degassing. First, low-temperature degassing may be performed in a sample chamber of the molecular beam epitaxy system, and the low-temperature degassing may be performed, for example, under the following conditions: the temperature was 200 ℃ and the degassing time 150 minutes.
After the low-temperature degassing is completed, the substrate 1 is transferred into a buffer chamber of the molecular beam epitaxy system for high-temperature degassing, and the conditions of the high-temperature degassing can be, for example: the temperature was 420 ℃ and the degassing time was 120 minutes.
After the high-temperature degassing is completed, the substrate 1 is transferred to a growth chamber of a molecular beam epitaxy system for deoxidation treatment, and the deoxidation treatment conditions can be as follows: when the temperature of the substrate 1 is about 400 ℃, opening a Sb source furnace shutter to enable the substrate 1 to be in Sb2Under the protection of beam current atmosphere. Meanwhile, the deoxidation condition is observed in real time by using the reflection high-energy electron diffraction device, the deoxidation is started when bright spots or stripes appear on a receiving screen of the reflection high-energy electron diffraction device, the temperature is generally raised by 30-40 ℃ for deoxidation treatment when the deoxidation stripes appear, the deoxidation temperature is generally 650-690 ℃, and the deoxidation time is generally 30-90 minutes.
The substrate 1 determines a reconstruction temperature according to a reconstruction condition of the substrate 1 during heating, including: observing the substrate 1 by using a reflection high-energy electron diffraction device, wherein the substrate 1 presents X3 reconstruction at high temperature, reconstruction stripes are sparse, two reconstruction stripes are arranged between every two reconstruction points, the substrate 1 presents X5 reconstruction at low temperature, reconstruction stripes are dense, four reconstruction stripes are arranged between every two reconstruction points, the substrate 1 is cooled to present X5 reconstruction, the temperature of the substrate 1 is gradually increased, and the transition temperature of the substrate 1 when the substrate 1 is transformed from X5 reconstruction to X3 reconstruction is observed and is called reconstruction temperature TCDetermining the reconstruction temperature TC。
The buffer layer 21 may have a thickness of, for example, 400nm, and may Be made of a material doped with Be element in GaSb, and the doping concentration of Be element may Be, for example, 2.0 × 1018cm-3The temperature of the Be source furnace may Be 860 deg.C, and the growth temperature of the P-type doped buffer layer 21 may Be TCThe Sb/Ga beam ratio may be 11 at +90 ℃, and the growth rate may be Ga0.6ML/s (where ML represents an atomic layer).
Step S102, preparing the short-wave infrared unit 22 on the surface of the buffer layer 21 in a stacking mode.
Specifically, a first P-type layer 221, a short-wave absorption layer 222 and a first N-type layer 223 are sequentially stacked on the surface of the buffer layer 21 to form the short-wave infrared unit 22, wherein the materials of the first P-type layer 221, the short-wave absorption layer 222 and the first N-type layer 223 include at least one of AlInAsSb and InGaAsSb quaternary alloy materials. The first P-type layer 221 may have a thickness of 550nm and may be made of Al0.3In0.7Parameter of AsSb digital alloyThe doped concentration of the doped Be can Be 2.0 × 1018cm-3The temperature of the Be source furnace may Be 860 deg.C, and the growth temperature of the first P type layer 221 may Be TCThe As/In beam ratio may be 3, the Sb/Al beam ratio may be 5, and the growth rate may be In0.4ML/s, A10.4ML/s. The short wave absorption layer 222 may have a thickness of 1500nm and may be made of Al0.3In0.7The short wave absorption layer 222 of the AsSb digital alloy is doped unintentionally and the concentration of the undoped lower carrier can be 1015-1016cm-3The temperature for growing the short wave absorption layer 222 may be TCThe As/In beam current ratio can be 3, the Sb/Al beam current ratio can be 5, and the growth rate of the short-wave absorption layer 222 can be In0.4ML/s and Al0.4ML/s. The thickness of the first N-type layer 223 may be 200nm, and the material is Al0.3In0.7The AsSb digital alloy is doped with Si, and the doping concentration of the Si can be 2.0 multiplied by 1018em-3The temperature of the Si source furnace may be 1240 ℃ and the growth temperature of the first N type layer 223 may be TCThe As/In beam current ratio can be 3, the Sb/A1 beam current ratio can be 5, and the growth rate can be In0.4ML/s and Al0.4ML/s.
And step S103, superposing and preparing the avalanche multiplication unit 23 on the surface of the short wave infrared unit 22.
Specifically, a second N-type layer 231, an avalanche multiplication layer 232, and a second P-type layer 233 are sequentially stacked on the surface of the first N-type layer 223 to form the avalanche multiplication unit 23, and the materials of the second N-type layer 231, the avalanche multiplication layer 232, and the second P-type layer 233 include a material whose ratio of the hole ionization coefficient to the electron ionization coefficient is smaller than a predetermined value, which may be 0.1. The second N-type layer 231 may have a thickness of 200nm and may be made of Al0.7In0.3The AsSb digital alloy is doped with Si, and the doping concentration of the Si can be 2.0 multiplied by 1018cm-3The temperature of the Si source furnace may be 1240 ℃ and the growth temperature of second N-type layer 231 may be TCThe As/In beam current ratio can be 3, the Sb/Al beam current ratio can be 5, and the growth rate can be In0.4ML/s and Al0.4ML/s. The thickness of the avalanche multiplication layer 232 can be 1000nm, and the material can be Al0.7In0.4The AsSb digital alloy has unintentionally doped layer and concentrated carrier under undoped conditionThe degree may be 1015-1016cm-3The growth temperature of the avalanche multiplication layer 232 can be TCThe As/In beam current ratio can be 3, the Sb/Al beam current ratio can be 5, and the growth rate can be In0.4ML/s and Al0.4ML/s. The second P-type layer 233 may have a thickness of 200nm and may be made of Al0.7In0.3Be is doped in the AsSb digital alloy, and the doping concentration of Be can Be 2.0 multiplied by 1018cm-3The temperature of the Be source furnace may Be 860 deg.C, and the growth temperature of the second P-type layer 223 may Be TCThe As/In beam current ratio can be 3, the Sb/Al beam current ratio can be 5, and the growth rate can be In0.4ML/s and Al0.4ML/s.
In step S104, a P-type cap layer 24 is stacked on the surface of the second P-type layer 223.
Specifically, the thickness of the P-type cover layer 24 can Be 30nm, the material can Be doped Be in GaSb, and the doping concentration of Be can Be 5.0 multiplied by 1018em-3The temperature of the Be source furnace may Be 890 deg.C, and the growth temperature of the P-type doped cap layer 24 may Be TCThe Sb/Ga beam ratio may be 5.2 and the growth rate may be Ga0.6ML/s.
Step S105, etching the epitaxial structure 2 formed in steps S101-S104.
Specifically, the method may include: etching by Inductively Coupled Plasma (ICP) to form steps to make the remaining epitaxial structure 2 cylindrical, wherein the etching gas can be CH4：C12: ar, steps deep to the first P-type layer 221.
And step S106, vulcanizing and passivating the outside of the epitaxial structure 2.
Specifically, the vulcanization process may use 24g of Na2S·9H20 and 500ml of ethylene glycol are ultrasonically stirred to prepare a vulcanizing liquid, the vulcanizing liquid is connected with a negative electrode of a power supply, the back of the detector is adsorbed by a suction head and is connected with a positive electrode of the power supply, the voltage of the power supply is controlled to be 25V, the current is controlled to be 12mA, and the front of the detector is contacted with the vulcanizing liquid to finish the vulcanizing process. After the vulcanization process is completed, a passivation layer 5 is prepared outside the vulcanized layer 6 by using a plasma chemical vapor deposition method, wherein the passivation layer 5 can be SiO2The passivation layer may have a thickness of 200 nm.
Step S107, carrying out evaporation electrode treatment on the epitaxial structure 2 to form a metal upper electrode 3 and a metal lower electrode 7.
Specifically, the metal upper electrode 3 and the metal lower electrode 7 can be prepared by evaporating Ti/Pt/Au by electron beams, the thicknesses can be respectively 50nm/50nm/300nm, the deposition condition can be less than or equal to 100 ℃, wherein the metal upper electrode 3 is annular, the middle of the metal upper electrode is hollowed to form a light through hole 4, a Ti layer of the metal upper electrode 3 is in contact with the P-type doped cover layer 24, the metal lower electrode 7 is annular, and the Ti layer is in contact with the first P-type layer 221.
It should be understood that the numerical values of the various parameters of the above-described process are exemplary only and are not intended to limit the present disclosure.
The above-mentioned embodiments are intended to illustrate the objects, technical solutions and advantages of the present invention in further detail, and it should be understood that the above-mentioned embodiments are only exemplary embodiments of the present invention, and are not intended to limit the present invention, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. A short-wave dual-color infrared detector, comprising:
a substrate (1), the material of the substrate (1) comprising a GaSb material;
the buffer layer (21) is formed on the surface of the substrate (1), and the material of the buffer layer (21) comprises GaSb material;
the short-wave infrared unit (22) comprises a first P-type layer (221), a short-wave absorption layer (222) and a first N-type layer (223) which are sequentially stacked on the surface of the buffer layer (21), wherein the materials of the first P-type layer (221), the short-wave absorption layer (222) and the first N-type layer (223) comprise at least one of AlInAsSb and InGaAsSb quaternary alloy materials;
the avalanche multiplication unit (23) comprises a second N-type layer (231), an avalanche multiplication layer (232) and a second P-type layer (233) which are sequentially stacked on the surface of the first N-type layer (223), wherein the materials of the second N-type layer (231), the avalanche multiplication layer (232) and the second P-type layer (233) comprise materials of which the ratio of the material hole ionization coefficient to the material electron ionization coefficient is smaller than a preset value.
2. The short-wave bicolor infrared detector according to claim 1, characterized in that the AlInAsSb, InGaAsSb quaternary alloy material has a cutoff wavelength of 1-3 μm.
3. The short-wave dual-color infrared detector according to claim 1, characterized in that the preset value is 0.1.
4. The short wavelength bi-color infrared detector of claim 1, wherein the material having a ratio of a material hole ionization coefficient to a material electron ionization coefficient less than a predetermined value comprises at least one of an AlInAsSb digital alloy material, an AlInAsSb bulk material, an AlGaAsSb digital alloy material, and an AlGaAsSb bulk material.
5. The short-wave dual-color infrared detector of claim 4,
the band gap widths of the AlInAsSb digital alloy material and the AlInAsSb body material are 0.998-1.323eV, and the cut-off wavelength is 0.93-1.24 μm;
the band gap width of the AlGaAsSb digital alloy material and the AlGaAsSb body material is 0.998-1.245eV, and the cutoff wavelength is 0.995-1.24 mu m.
6. Short-wave bicolor infrared detector according to claim 1, characterized in that an annular metal lower electrode (7) is arranged outside the first P-type layer (221), a P-type cover layer (24) is arranged on the surface of the second P-type layer (233), and an annular metal upper electrode (3) is arranged on the surface of the P-type cover layer (24).
7. The short-wave bicolor infrared detector according to claim 6, characterized in that a vulcanized layer (6) is arranged on the outer surface of the short-wave infrared unit (22), the avalanche multiplication unit (23), the P-type cover layer (24) and between the metal upper electrode (3) and the metal lower electrode (7).
8. Short-wave bicolor infrared detector according to claim 7, characterized in that the surface of the vulcanized layer (6) is formed with a passivation layer (5).
9. A method of making a short wave dual color infrared detector of any one of claims 1 to 8, comprising:
forming a buffer layer (21) on a substrate (1), wherein the material of the substrate (1) and the buffer layer (21) comprises GaSb material;
sequentially stacking and preparing a first P type layer (221), a short-wave absorption layer (222) and a first N type layer (223) on the surface of the buffer layer (21) to form a short-wave infrared unit (22), wherein the materials of the first P type layer (221), the short-wave absorption layer (222) and the first N type layer (223) comprise at least one of AlInAsSb and InGaAsSb quaternary alloy materials;
and sequentially laminating a second N-type layer (231), an avalanche multiplication layer (232) and a second P-type layer (233) on the surface of the first N-type layer (223) to form an avalanche multiplication unit (23), wherein the materials of the second N-type layer (231), the avalanche multiplication layer (232) and the second P-type layer (233) comprise materials of which the ratio of the material hole ionization coefficient to the material electron ionization coefficient is smaller than a preset value.
10. The method for preparing a short-wave bi-color infrared detector according to claim 9, characterized in that the preparation of the buffer layer (21), the short-wave infrared unit (22) and the avalanche multiplication unit (23) is performed in a molecular beam epitaxy apparatus.
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