CN114121912A - Light emitter and light sensor - Google Patents

Light emitter and light sensor Download PDF

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Publication number
CN114121912A
CN114121912A CN202110357537.3A CN202110357537A CN114121912A CN 114121912 A CN114121912 A CN 114121912A CN 202110357537 A CN202110357537 A CN 202110357537A CN 114121912 A CN114121912 A CN 114121912A
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China
Prior art keywords
conductive
block
light emitter
conductive frame
frames
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CN202110357537.3A
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Chinese (zh)
Inventor
林贞秀
翁明堃
黄霈颖
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Lite On Technology Corp
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Lite On Technology Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
    • H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by at least one potential or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

The application discloses light emitter and optical sensor, the light emitter includes a first electrically conductive frame, a plurality of second electrically conductive frame, a casing, and at least one photoelectricity chip. The first conductive frame comprises a die bonding block; the plurality of second conductive frames comprise at least one routing block and are arranged at intervals with the first conductive frames. The shell covers the first conductive frames and the plurality of second conductive frames, at least part of top surfaces of the first conductive frames and at least part of top surfaces of any second conductive frames are exposed outside the shell to form the die bonding block and the routing block, and at least part of bottom surfaces of the first conductive frames and at least part of bottom surfaces of any second conductive frames are exposed outside the shell. The at least one photoelectric chip is fixed on the die bonding block of the first conductive frame and electrically coupled with the routing block of the at least one second conductive frame. Therefore, the problems of complicated manufacturing process, insufficient product yield and the like of the conventional optical sensor are solved by adopting the conductive frame.

Description

Light emitter and light sensor
Technical Field
The present disclosure relates to light emitters, and particularly to a light emitter and a light sensor.
Background
The conventional optical sensor has an emitting end and a receiving end, and the emitting end uses the circuit board as a substrate, however, this type of process is complicated and has low yield, which affects the reliability and cost of the product. The applicant considers that the above-mentioned defects can be improved, and therefore, the applicant is interested in studying the above-mentioned defects and applying the scientific principles, and finally proposes an application which is reasonably designed and effectively improves the above-mentioned defects.
Disclosure of Invention
Embodiments of the present invention provide a light emitter and a light sensor, which can effectively overcome the possible defects of the existing light emitter.
The embodiment of the present application also discloses an optical transmitter, including: a first conductive frame including a die bonding block; the second conductive frames comprise at least one routing block, and the second conductive frames and the first conductive frames are arranged at intervals; the shell covers the first conductive frames and the plurality of second conductive frames, at least part of top surfaces of the first conductive frames and at least part of top surfaces of any second conductive frames are exposed out of the shell to form the die bonding block and the routing block, and at least part of bottom surfaces of the first conductive frames and at least part of bottom surfaces of any second conductive frames are exposed out of the shell for external electrical connection; and at least one photoelectric chip which is fixed on the die bonding block of the first conductive frame and electrically coupled with the routing block of at least one of the second conductive frames.
Optionally, a separation groove is formed in the die bonding block on at least a part of the top surface of the first conductive frame in a recessed manner, so that at least a part of the top surface of the first conductive frame is divided into a plurality of sub-blocks by the separation groove; the number of at least one photoelectric chip is further limited to a plurality, and the plurality of photoelectric chips are respectively fixed on the plurality of sub-blocks.
Optionally, the separation groove penetrates from one of two opposite sides of the die bonding block to the other of the two opposite sides of the die bonding block, and the housing is filled in the separation groove.
Optionally, the first conductive frame further includes a first extending block and a second extending block, and the die bonding block extends diagonally to connect the first extending block and the second extending block.
Optionally, the plurality of second conductive frames include at least one first frame and at least one second frame, at least one first frame is arranged in a first row and adjacent to the die attach region and the first extension block, and at least one second frame is arranged in a second row and adjacent to the die attach region and the second extension block.
Optionally, the number of at least one of the first brackets and the number of at least one of the second brackets are each defined as a plurality, and the first column is parallel to the second column.
Optionally, the first conductive frame includes a third extending block, and at least one first second conductive frame is located between the first extending block and the third extending block.
Optionally, a T-shaped partition groove is formed in the die bonding block on at least a portion of the top surface of the first conductive frame in a recessed manner, so that at least a portion of the top surface of the first conductive frame is divided into three sub-blocks by the partition groove, one of the three sub-blocks is connected to the first extension block, and the other two of the three sub-blocks are respectively connected to the second extension block and the third extension block.
Optionally, the first conductive frame further includes a first extending block and a second extending block, the die bonding block extends diagonally to connect the first extending block and the second extending block, at least a portion of the bottom surface of the first conductive frame includes a main bonding surface, a first bonding surface, and a second bonding surface with the same polarity, the main bonding surface is located in the die bonding block, the first bonding surface is located in the first extending block, and the second bonding surface is located in the second extending block.
Optionally, the light emitter includes a lens layer disposed on the housing, and the lens layer includes at least one lens portion corresponding to the at least one optoelectronic chip; the photoelectric chip is located in a projection area formed by orthographic projection of the lens part towards the top surface of the first conductive frame.
Optionally, the projection area is circular and has a diameter, and the light-ejecting surface of at least one of the optoelectronic chips has a maximum outer diameter, and the diameter is 110% to 140% of the maximum outer diameter.
Optionally, a distance between a top end of at least one of the lens portions and at least one of the optoelectronic chips is 220% to 320% of a height of at least one of the optoelectronic chips.
Optionally, a receiving groove is formed in the housing in an enclosing manner, and at least one of the optoelectronic chips is located in the receiving groove; the light emitter comprises a filling body filled in the accommodating groove, and at least one part of the photoelectric chip is at least partially embedded in the filling body.
Optionally, the entire top surface of the first conductive frame and the entire top surface of any one of the second conductive frames are exposed and coplanar with the top surface of the housing, and the light emitter includes a lens layer; the lens layer is disposed on the top surface of the first conductive frame, the top surfaces of the plurality of second conductive frames, and the top surface of the housing, and at least one of the optoelectronic chips is embedded in the lens layer.
The embodiment of the present application also discloses a light sensor, the light sensor includes: the optical transmitter at least comprises a first conductive frame, a plurality of second conductive frames and at least one photoelectric chip, the second conductive frames and the first conductive frame are arranged at intervals, and the photoelectric chip is electrically coupled with the first conductive frame and at least one of the second conductive frames; and at least one light receiver which is arranged at a distance from the light emitter, and the center of the shape of the at least one light receiver is separated from the center of the shape of the light emitter by a configuration distance.
Optionally, the number of at least one of the light receivers is further limited to at least four, and the center of the shape of any one of the light receivers is located on a circular configuration path with the center of the shape of the light emitter as a center and the configuration distance as a radius.
Optionally, the centers of the shapes of any two adjacent light receivers form a chord length on the circular arrangement path, and the chord lengths formed by at least four light receivers are all equal.
To sum up, the light emitter and the light sensor disclosed in the embodiment of the present application solve the problems of complicated manufacturing process, insufficient product yield and the like of the existing light sensor by adopting the form of the conductive frame.
For a better understanding of the nature and technical content of the present application, reference should be made to the following detailed description and accompanying drawings, which are provided to illustrate the present application and are not intended to limit the scope of the present application.
Drawings
Fig. 1 is a schematic perspective view of a light emitter according to a first embodiment of the present application.
Fig. 2 is a perspective view of fig. 1 from another angle.
Fig. 3 is an exploded view of fig. 1.
Fig. 4 is a schematic top view of a first conductive frame and a second conductive frame according to a first embodiment of the present application.
Fig. 5 is a schematic bottom view of a first conductive frame and a second conductive frame according to a first embodiment of the present application.
Fig. 6 is a schematic cross-sectional view of fig. 1 along the sectional line VI-VI.
Fig. 7 is a schematic cross-sectional view of fig. 1 along the sectional line VII-VII.
Fig. 8 is a schematic perspective view of a light emitter according to a second embodiment of the present application.
Fig. 9 is a top view of fig. 8.
Fig. 10 is a schematic cross-sectional view of fig. 8 along the cross-sectional line X-X.
Fig. 11 is a schematic perspective view of a light emitter according to a third embodiment of the present application.
Fig. 12 is an exploded view of fig. 11.
Fig. 13 is a schematic perspective view of a light emitter according to a fourth embodiment of the present application.
Fig. 14 is an exploded view of fig. 13.
Fig. 15 is a schematic top view of a first conductive frame and a second conductive frame according to a fourth embodiment of the present application.
Fig. 16 is a bottom view of the first conductive frame and the second conductive frame according to the fourth embodiment of the present application.
Figure 17 is a schematic cross-sectional view of figure 13 taken along section line XVII-XVII.
Fig. 18 is a perspective view of another aspect of a light emitter according to a fourth embodiment of the present application.
Fig. 19 is an exploded view of fig. 18.
Fig. 20 is a schematic plan view of a reflective optical sensor according to a fifth embodiment of the present application.
Fig. 21 is a schematic plan view of another embodiment of a reflective optical sensor according to the fifth embodiment of the present application.
Fig. 22 is a schematic plan view of another embodiment of a reflective optical sensor according to the fifth embodiment of the present application.
Detailed Description
The following is a description of the embodiments of the "light emitter and light sensor" disclosed in the present application with reference to specific embodiments, and those skilled in the art can appreciate advantages and effects of the present application from the disclosure of the present application. The present application is capable of other and different embodiments and its several details are capable of modifications and variations in various respects, all without departing from the present application. The drawings in the present application are for illustrative purposes only and are not intended to be drawn to scale. The following embodiments will further explain the related art of the present application in detail, but the disclosure is not intended to limit the scope of the present application.
It will be understood that, although the terms "first," "second," "third," etc. may be used herein to describe various components or signals, these components or signals should not be limited by these terms. These terms are used primarily to distinguish one element from another element or from one signal to another signal. In addition, the term "or" as used herein should be taken to include any one or combination of more of the associated listed items as the case may be.
[ example one ]
Please refer to fig. 1 to 7, which illustrate a first embodiment of the present application. As shown in fig. 1 to 3, the present embodiment discloses a light emitter 100, which includes a first conductive frame 1, a plurality of second conductive frames 2 located outside (or around) the first conductive frame 1, a casing 3 covering the first conductive frame 1 and the plurality of second conductive frames 2, a plurality of optoelectronic chips 4 (for example, light emitting diode chips) mounted on the first conductive frame 1, and a filling body 5 formed in the casing 3.
In order to facilitate understanding of the light emitter 100 of the present embodiment, the distribution of the first conductive frame 1 and the plurality of second conductive frames 2 and the corresponding relationship between the first conductive frame 1 and the plurality of second conductive frames 2 and the housing 3 will be described first, and then detailed structural features of the first conductive frame 1 and the plurality of second conductive frames 2 will be described.
As shown in fig. 3 to 5, the first conductive frame 1 is a one-piece structure integrally formed in this embodiment, and the first conductive frame 1 includes a die bonding block 14, a first extending block 11, a second extending block 12, and a third extending block 13. The die bonding block 14 of the present embodiment is substantially rectangular, and the first extension block 11, the second extension block 12, and the third extension block 13 are formed by extending from three corners of the die bonding block 14.
That is, the first extension block 11 and the second extension block 12 are respectively formed by extending from two opposite sides of the die bonding block 14 (e.g., the upper side and the lower side of the die bonding block 14 in fig. 4), and the first extension block 11 and the third extension block 13 are located on the same side of the die bonding block 14 (e.g., the upper side of the die bonding block 14). Further, the first extension block 11 and the second extension block 12 are connected to two corners of the die bonding block 14 located at diagonal angles, and the second extension block 12 and the third extension block 13 are connected to two adjacent corners of the die bonding block 14.
The second conductive frames 2 are respectively disposed at intervals with the opposite sides of the die bonding block 14 (e.g., the upper side and the lower side of the die bonding block 14 in fig. 4). For convenience of describing the layout of the second conductive frames 2, the second conductive frames 2 can be divided into at least one first frame 2a and at least one second frame 2b respectively adjacent to the two opposite sides of the die bonding block 14.
In more detail, at least one of the first supports 2a, the first extension block 11, and the third extension block 13 is adjacent to the upper side of the die bonding block 14 and arranged in a first row (that is, the third extension block 13 is disposed on the first row), at least one of the first supports 2a is located between the first extension block 11 and the third extension block 13, and at least one of the second supports 2b and the second extension block 12 is adjacent to the lower side of the die bonding block 14 and arranged in a second row. In this embodiment, the number of the at least one first and second conductive frames 2a is one, the number of the at least one second conductive frame 2b is multiple (e.g., two), and the first row is parallel to the second row, but the application is not limited thereto.
Furthermore, the first extension block 11, the second extension block 12, the third extension block 13, and each of the second conductive frames 2 each include at least two broken arms 111, 121, 131, 21. Wherein at least two broken arms 111, 121, 131, 21 of the first extending block 11, the second extending block 12, and at least one second conductive frame 2 (e.g. the first conductive frame 2a and the second conductive frame 2b) respectively have an acute angle.
Accordingly, when a plurality of light emitters 100 are manufactured, the first conductive frame 1 and the second conductive frame 2 of any one of the light emitters 100 can be connected to the first conductive frame 1 and the second conductive frame 2 of another adjacent light emitter 100 by the breaking arms 111, 121, 131, 21 (not shown), so as to effectively improve the stability during the injection molding of the housing 3 and avoid the occurrence of the islanding effect.
The housing 3 covers the first conductive frame 1 and the plurality of second conductive frames 2, and surrounds and forms an accommodating groove 31. The bottom surface 10b and at least a portion of the top surface 10a of the first conductive frame 1 and the bottom surface 20b and at least a portion of the top surface 20a of any one of the second conductive frames 2 are exposed outside the housing 3 (see fig. 2, 3, 6, and 7), and the end surface of each of the broken arms 111, 121, 131, 21 is exposed and coplanar with the housing 3. In other words, as shown in fig. 2 and 3, at least a portion of the top surface 10a of the first conductive frame 1 and at least a portion of the top surface 20a of any one of the second conductive frames 2 are located at the bottom of the accommodating groove 31, and the bottom surface 10b of the first conductive frame 1 and the bottom surface 20b of any one of the second conductive frames 2 are coplanar with the bottom surface 30b of the housing 3.
In addition, in the embodiment, the entire bottom surfaces 10b and 20b of the first conductive frame 1 and any one of the second conductive frames 2 are exposed outside the housing 3, but the application is not limited thereto. For example, in other embodiments not shown in the present application, the first conductive frame 1 and any one of the second conductive frames 2 may also be exposed outside the housing 3 by at least a portion of the bottom surfaces 10b and 20b thereof.
Furthermore, the area of at least a portion of the top surface 10a of the first conductive frame 1 exposed outside the housing 3 is larger than the area of the bottom surface 10b of the first conductive frame 1, and the area of at least a portion of the top surface 20a of any one of the second conductive frames 2 exposed outside the housing 3 is larger than the area of the bottom surface 20b of any one of the second conductive frames 2.
As illustrated in fig. 5, when the sum of the areas of the first conductive frame 1 and the plurality of second conductive frames 2 is 1, the area of the first conductive frame 1 not covered by the housing 3 (i.e. the welding area) occupies 55 to 65%, in other words, the area of the first conductive frame 1 and the plurality of second conductive frames 2 covered by the housing 3 occupies 35 to 45%, so as to effectively increase the area of the first conductive frame 1 and the plurality of second conductive frames 2 combined with the housing 3, and further improve the combination between them.
In addition, as shown in fig. 3 to 5, the first conductive frame 1 is substantially y-shaped in the present embodiment, and the die bonding block 14 is fixed at the center of the housing 3 so as to transversely cross the housing 3 (e.g., the die bonding block 14 in fig. 3 extends from the left rear side to the right front side of the housing 3), while the first extending block 11, the second extending block 12, and the third extending block 13 are respectively fixed at three corners of the housing 3, so that the first conductive frame 1 can diagonally cross the housing 3 (e.g., the first conductive frame 1 in fig. 3 and 4 extends from the left upper corner to the right lower corner of the housing 3), thereby improving the overall structural stability.
At least a portion of the top surface 10a of the first conductive frame 1 is recessed in the die bonding block 14 to form a separation groove 141, so that at least a portion of the top surface 10a of the first conductive frame 1 is divided into a plurality of sub-blocks 142a, 142b by the separation groove 141. The separation groove 141 penetrates from one of the two opposite sides of the die bonding block 14 to the other, and the housing 3 is filled in the separation groove 141. In addition, the first extension block 11 has a first wire bonding region 113 exposed in the accommodating groove 31, and each of the second conductive frames 2 has a wire bonding region 22 exposed in the accommodating groove 31.
In this embodiment, the separating groove 141 of the first conductive frame 1 is substantially T-shaped, so that at least a portion of the top surface 10a of the first conductive frame 1 is divided into three sub-blocks 142a and 142b by the separating groove 141, one of the three sub-blocks 142a and 142b (e.g., the sub-block 142a) is connected to the first extension block 11, and the other two of the three sub-blocks 142a and 142b (e.g., the sub-block 142b) are respectively connected to the second extension block 12 and the third extension block 13. Further, the area of the sub-block 142a connected to the first extension block 11 is larger than the area of any one of the other sub-blocks 142b and is also larger than the sum of the areas of the other two sub-blocks 142 b.
Accordingly, the light emitter 100 can carry a plurality of optoelectronic chips 4 with different sizes or different functions through the plurality of sub-blocks 142a, 142b with different areas, thereby increasing the application range of the light emitter 100, but the present application is not limited thereto. Moreover, the separating groove 141 not only can effectively improve the bonding property between the first conductive frame 1 and the housing 3, but also the separating groove 141 can reduce mutual overflow interference of a plurality of die attach adhesives (not shown) for respectively fixing the plurality of optoelectronic chips 4 on the plurality of sub-blocks 142a, 142 b.
The bottom surface 10b of the first conductive frame 1 includes a main bonding surface 143, a first bonding surface 112, a second bonding surface 122, and a third bonding surface 132 with the same polarity. The main bonding surface 143 is located below the die bonding block 14, the first bonding surface 112 is located in the first extension block 11, the second bonding surface 122 is located in the second extension block 12, and the third bonding surface 132 is located in the third extension block 13. Further, the bottom surface 20b of each of the second conductive frames 2 defines a land 23.
The plurality of photoelectric chips 4 are located in the containing groove 31 and embedded in the filling body 5, and the plurality of photoelectric chips 4 are fixed on the die bonding block 14 of the first conductive frame 1 and electrically coupled to the first conductive frame 1 and the plurality of second conductive frames 2. Further, the plurality of optoelectronic chips 4 are respectively fixed to the plurality of sub-blocks 142a, 142b and wire-bonded to the first wire bonding region 113 and the plurality of wire bonding regions 22. The optoelectronic chips 4 fixed to the sub-block 142a with a larger area are wire-bonded to the first wire-bonding region 113 and one wire-bonding region 22 at the same time, and the other two optoelectronic chips 4 are wire-bonded to the other two wire-bonding regions 22 respectively. More specifically, the optoelectronic chip 4 in this embodiment includes a green led chip, a red led chip, and an infrared led chip; the green light emitting diode chip is fixed to the sub-block 142a and wire-bonded to the first wire bonding area 113 and one wire bonding area 22, and the red light emitting diode chip and the infrared light emitting diode chip are respectively fixed to the two sub-blocks 142b and wire-bonded to the other two wire bonding areas 22.
It should be noted that the number of the optoelectronic chips 4 is illustrated as a plurality in the present embodiment, but the present application is not limited thereto. For example, in other embodiments not shown in the present application, the number of the optoelectronic chips 4 may be at least one, and at least one of the optoelectronic chips 4 is fixed to the die bonding block 14 (e.g., at least one of the sub-blocks 142a, 142b) of the first conductive frame 1 and electrically coupled to at least one of the first conductive frame 1 and the second conductive frame 2.
Accordingly, the light emitter 100 carries a plurality of the optoelectronic chips 4 through the first conductive frame 1 with a larger size, so as to effectively improve the heat dissipation effect of the optoelectronic chips 4. Furthermore, since the main bonding surface 143, the first bonding surface 112, the second bonding surface 122, and the third bonding surface 132 of the first conductive frame 1 have the same polarity, any one of the second conductive frames 2 is electrically coupled to only one of the optoelectronic chips 4, and thus has a function of individually activating the corresponding optoelectronic chip 4.
[ example two ]
Please refer to fig. 8 to 10, which illustrate a second embodiment of the present application. Since the present embodiment is similar to the first embodiment, the same parts of the present embodiment as the first embodiment will not be repeated (for example, the first conductive frame 1, the plurality of second conductive frames 2, the housing 3, and the plurality of optoelectronic chips 4), and the differences between the present embodiment and the first embodiment are substantially as follows:
in the present embodiment, the height of the housing 3 and the height of the optoelectronic chip 4 are substantially equal to each other, the light emitter 100 includes a lens layer 6 disposed on the housing 3, and the lens layer 6 and the filling body 5 are integrally formed as a single piece (that is, the filling body 5 is located in the accommodating groove 31, and the portion located above the housing 3 is referred to as the lens layer 6), but the present application is not limited thereto. For example, in other embodiments not shown in the present application, the lens layer 6 and the filling body 5 may also be two separate members connected to each other.
The lens layer 6 includes a base layer 61 positioned on the housing 3 and a plurality of lens portions 62 connected to the base layer 61, and the positions of the plurality of lens portions 62 correspond to the plurality of photoelectric chips 4, respectively. Wherein each of the optoelectronic chips 4 is located in a projection area formed by orthographically projecting the corresponding lens portion 62 toward the top surface 10a of the first conductive frame 1; that is, each of the photoelectric chips 4 is located right below the corresponding lens portion 62 in the present embodiment.
Further, in order to enable any one of the lens portions 62 to effectively enhance the light emitting performance of the corresponding optoelectronic chip 4, each of the lens portions 62 and the corresponding optoelectronic chip 4 are preferably configured in the following manner, but the application is not limited thereto. In any one of the lens portions 62 and the corresponding optoelectronic chip 4, the projection area is circular and has a diameter D62, the light-ejecting surface 41 of the optoelectronic chip 4 has a maximum outer diameter D41, and the diameter D62 is 110% to 140% of the maximum outer diameter D41. Furthermore, a distance H62 between the top end of any one of the lens portions 62 and the corresponding optoelectronic chip 4 is 220% to 320% of the height H4 of the corresponding optoelectronic chip 4.
It should be noted that the number of the optoelectronic chips 4 is also illustrated as a plurality in the present embodiment, but the present application is not limited thereto. For example, in other embodiments not shown in the present application, the number of the optoelectronic chips 4 may be at least one, and the lens layer 6 includes at least one lens portion 62 corresponding to at least one of the optoelectronic chips 4.
Accordingly, in the present embodiment, the light emitter 100 utilizes the housing 3 having the same height as the optoelectronic chip 4 and the lens layer 6, so that the light emitting efficiency of the light emitter 100 of the present embodiment can be further demonstrated when the height of the rear end product using the light emitter 100 is limited.
[ third example ]
Please refer to fig. 11 and 12, which illustrate a third embodiment of the present application. Since the present embodiment is similar to the second embodiment, the same parts of the present embodiment and the second embodiment are not repeated (for example, the first conductive frame 1, the plurality of second conductive frames 2, the lens layer 6, and the plurality of optoelectronic chips 4), and the differences of the present embodiment compared to the above embodiments are roughly described as follows:
in this embodiment, the entire top surface 10a of the first conductive frame 1 and the entire top surface 20a of any one of the second conductive frames 2 are exposed and coplanar with the top surface 30a of the housing 3, and the bottom surface 10b of the first conductive frame 1 and the bottom surface 20b of any one of the second conductive frames 2 are exposed and coplanar with the bottom surface 30b of the housing 3 (as in the first and second embodiments). Accordingly, the first conductive frame 1, the plurality of second conductive frames 2, and the housing 3 together form a flat plate structure in the present embodiment (that is, the housing 3 is not formed with the accommodating groove 31, and the filling body 5 is omitted from the light emitter 100), so as to reduce the volume and height occupied by the light emitter 100.
Furthermore, the lens layer 6 is disposed on the top surfaces 10a of the first conductive frames 1, the top surfaces 20a of the second conductive frames 2, and the top surface 30a of the housing 3, and the plurality of optoelectronic chips 4 are embedded in the lens layer 6.
It should be noted that the number of the optoelectronic chips 4 is also illustrated as a plurality in the present embodiment, but the present application is not limited thereto. For example, in other embodiments not shown in the present application, the number of the optoelectronic chips 4 may be at least one, and at least one of the optoelectronic chips 4 is embedded within the lens layer 6.
[ example four ]
Please refer to fig. 13 to 19, which illustrate a fourth embodiment of the present application. Since this embodiment is similar to the second embodiment, the same parts of this embodiment as those of the second embodiment will not be repeated (e.g., the housing 3, the filling body 5, and the lens layer 6), and the differences between this embodiment and the second embodiment are roughly described as follows:
as shown in fig. 13 to 17, in the present embodiment, the number of the optoelectronic chips 4 included in the optical transmitter 100 is four, and the remaining structures of the optical transmitter 100 are correspondingly adjusted according to the number of the optoelectronic chips 4. For example: in the present embodiment, the light emitter 100 corresponds to a first support 2a instead of the third extension block 13 in the first embodiment.
In more detail, as shown in fig. 14 to 16, the first conductive frame 1 includes a die bonding block 14, a first extending block 11, and a second extending block 12. The die bonding block 14 of the present embodiment is substantially rectangular, and the first extension block 11 and the second extension block 12 are respectively formed by extending from two opposite sides of the die bonding block 14 (for example, the upper side and the lower side of the die bonding block 14 in fig. 15). The first extension block 11 and the second extension block 12 are preferably connected to two corners of the die bonding block 14 located at diagonal corners.
Accordingly, the die bonding block 14 of the first conductive frame 1 is fixed at the center of the housing 3 so as to transversely cross the housing 3 (e.g., the die bonding block 14 in fig. 14 extends from the left rear side to the right front side of the housing 3), and the first extending block 11 and the second extending block 12 are respectively fixed at two corners of the housing 3 located at diagonal angles, so that the first conductive frame 1 can improve the overall structural stability by diagonally crossing the housing 3 (e.g., the first conductive frame 1 in fig. 14 and 15 extends from the left upper corner to the right lower corner of the housing 3).
The second conductive frames 2 include a plurality of first frames 2a and a plurality of second frames 2b respectively adjacent to the opposite sides of the die bonding block 14, the first frames 2a and the first extension blocks 11 are arranged in a first row, the second frames 2b and the second extension blocks 12 are arranged in a second row, and the first row is parallel to the second row. In the embodiment, the number of the first brackets 2a and the number of the second brackets 2b are two in each case, but the application is not limited thereto.
The first conductive frame 1 is formed with a cross-shaped separating groove 141 in a concave manner at the die bonding block 14 exposed in the accommodating groove 31, so that the die bonding block 14 exposed in the accommodating groove 31 is divided into four sub-blocks 142a and 142b by the separating groove 141. The separation groove 141 penetrates from one of the two opposite sides of the die bonding block 14 to the other, and the housing 3 is filled in the separation groove 141.
Further, each of the sub-blocks 142a, 142b has substantially the same area, and two of the four sub-blocks 142a, 142b are connected to the first extension block 11, and the other two of the four sub-blocks 142a, 142b are connected to the second extension block 12. In addition, as shown in fig. 15, the first extension block 11 has a first wire bonding area 113 exposed in the accommodating groove 31, the second extension block 12 has a second wire bonding area 123 exposed in the accommodating groove 31, and each of the second conductive frames 2 has a wire bonding area 22 exposed in the accommodating groove 31.
The plurality of optoelectronic chips 4 are respectively fixed to the plurality of sub-blocks 142a, 142b, and wire-bonded to the first wire bonding region 113, the second wire bonding region 123, and the plurality of wire bonding regions 22. As shown in fig. 14 and fig. 15, the four optoelectronic chips 4 in this embodiment include two green led chips, one red led chip, and one infrared led chip; the two green light emitting diode chips are respectively fixed to the two sub-blocks 142a with slightly larger areas, and are respectively connected to the first wire bonding area 113 and the second wire bonding area 123 in a wire bonding manner, and are also respectively connected to the two adjacent wire bonding areas 22 in a wire bonding manner; the red light led chips and the infrared light led chips are respectively fixed to the two sub-blocks 142b with a slightly smaller area, and are respectively connected to the other two wire bonding areas 22 by wire bonding.
Furthermore, in the present embodiment, the lens layer 6 and the filling body 5 may be integrally formed as a single piece structure as shown in fig. 13 and 14; alternatively, the lens layer 6 and the filling body 5 may be two separate members connected to each other as shown in fig. 18 and 19. For example, the filling body 5 may be a reflective adhesive material, which is disposed around the plurality of optoelectronic chips 4 and exposes the top surfaces of the plurality of optoelectronic chips 4, wherein the number of the lens portions 62 included in the lens layer 6 is four in the present embodiment, and the positions of the lens portions correspond to the four optoelectronic chips 4 respectively.
It should be noted that the number of the optoelectronic chips 4 is also illustrated as a plurality in the present embodiment, but the present application is not limited thereto. For example, in other embodiments not shown in the present application, the number of the optoelectronic chips 4 may be at least one, and the lens layer 6 includes at least one lens portion 62 corresponding to at least one of the optoelectronic chips 4. In addition, the number and types of the optoelectronic chips 4 in fig. 18 and 19 can also be adjusted to three optoelectronic chips 4 according to the first embodiment according to design requirements, and the top surfaces thereof are exposed outside the filling body 5.
[ example five ]
Please refer to fig. 20 to 22, which illustrate a fifth embodiment of the present application. Since the present embodiment is similar to the first to fourth embodiments, the same parts of the present embodiment as the first to fourth embodiments are not repeated, and the differences of the present embodiment compared to the first to fourth embodiments are roughly described as follows:
as shown in fig. 20 and 21, the present embodiment discloses an optical sensor 1000, and more particularly, a reflective optical sensor 1000, which includes a carrier 300 (e.g., a circuit board), and an optical transmitter 100 and a plurality of optical receivers 200 disposed on the carrier 300. The light emitter 100 of the present embodiment is substantially as described in the first to fourth embodiments, and therefore, will not be described herein again. Any of the light receivers 200 can be used to receive a light beam emitted from the light emitter 100 and reflected. The optical receiver 200 may comprise a photodiode chip.
In more detail, the plurality of light receivers 200 are spaced apart from the light emitter 100, and a center of a shape of any one of the light receivers 200 is spaced apart from a center of a shape of the light emitter 100 by a disposition distance D200. The disposition distances D200 corresponding to the light receivers 200 are all equal, so as to effectively improve a Signal-to-Noise Ratio (SNR) of the reflective optical sensor 1000.
In this embodiment, the number of the plurality of optical receivers 200 is further limited to at least four, and the center of the shape of any one of the optical receivers 200 is located on a circular configuration path C with the center of the shape of the optical transmitter 100 as a center and the configuration distance D200 as a radius. Furthermore, the centers of the shapes of any two adjacent light receivers 200 form a chord length C1 on the circular arrangement path C, and the chord lengths C1 formed by at least four light receivers 200 are all equal.
It should be additionally noted that the number of the optical receivers 200 is also illustrated as a plurality in the present embodiment, but the present application is not limited thereto. For example, as shown in fig. 22, the number of the optical receivers 200 may be two. Alternatively, in other embodiments not shown in the present application, the number of the optical receivers 200 may be at least one, and the center of the shape of at least one of the optical receivers 200 is separated from the center of the shape of the optical transmitter 100 by the configuration distance D200 for receiving the reflected light emitted from the optical transmitter 100.
[ technical effects of the embodiments of the present application ]
To sum up, the light emitter and the light sensor disclosed in the embodiment of the present application solve the problems of complicated manufacturing process, insufficient product yield and the like of the existing light sensor by adopting the form of the conductive frame. The light emitter disclosed in the embodiment of the application is characterized in that the first conductive frame is structurally designed and matched with the plurality of second conductive frames to serve as a conductive framework of the light emitter, and the first extending block and the second extending block of the first conductive frame are respectively formed by extending from two opposite sides of the die bonding block, so that the first conductive frame can be stably connected with the shell. Furthermore, the die bonding block of the first conductive frame is fixed at the center of the housing so as to transversely cross the housing, and the first extension block and the second extension block are respectively fixed at two corners of the housing located at diagonal angles, so that the first conductive frame can cross the housing in a diagonal direction, thereby improving the overall structural stability.
The disclosure is only a preferred embodiment and is not intended to limit the scope of the claims, so that all equivalent variations using the teachings of the present specification and drawings are included in the scope of the claims.

Claims (17)

1. An optical transmitter, characterized in that the optical transmitter comprises:
a first conductive frame including a die bonding block;
the second conductive frames comprise at least one routing block, and the second conductive frames and the first conductive frames are arranged at intervals;
the shell covers the first conductive frames and the plurality of second conductive frames, at least part of top surfaces of the first conductive frames and at least part of top surfaces of any second conductive frames are exposed out of the shell to form the die bonding block and the routing block, and at least part of bottom surfaces of the first conductive frames and at least part of bottom surfaces of any second conductive frames are exposed out of the shell for external electrical connection; and
and the photoelectric chip is fixed on the die bonding block of the first conductive frame and is electrically coupled with the routing block of at least one second conductive frame.
2. The light emitter of claim 1, wherein at least a portion of the top surface of the first conductive frame is recessed into a separation groove in the die attach area, so that at least a portion of the top surface of the first conductive frame is divided into a plurality of sub-areas by the separation groove; the number of at least one photoelectric chip is further limited to a plurality, and the plurality of photoelectric chips are respectively fixed on the plurality of sub-blocks.
3. The light emitter of claim 2, wherein the separation groove penetrates from one of the two opposite sides of the die attach block to the other of the two opposite sides of the die attach block, and the housing is filled in the separation groove.
4. The light emitter of claim 1, wherein the first conductive frame further comprises a first extension block and a second extension block, the die attach block extending diagonally to connect the first extension block and the second extension block.
5. The light emitter of claim 4, wherein the plurality of second conductive frames comprises at least one first frame and at least one second frame, at least one of the first frames being arranged in a first row adjacent to the die attach region and the first extension block, and at least one of the second frames being arranged in a second row adjacent to the die attach region and the second extension block.
6. The light emitter of claim 5, wherein the number of at least one of the first supports and the number of at least one of the second supports are each defined as a plurality, and the first column is parallel to the second column.
7. The light emitter of claim 4, wherein the first conductive frame comprises a third extending section, and at least one first second conductive frame is located between the first extending section and the third extending section.
8. The light emitter of claim 7, wherein at least a portion of the top surface of the first conductive frame is recessed in the die attach area to form a T-shaped partition, such that at least a portion of the top surface of the first conductive frame is divided into three sub-areas by the partition, one of the three sub-areas is connected to the first extension area, and the other two of the three sub-areas are connected to the second extension area and the third extension area, respectively.
9. The light emitter of claim 1, wherein the first conductive frame further comprises a first extension block and a second extension block, the die attach block extending diagonally to connect the first extension block and the second extension block, at least a portion of the bottom surface of the first conductive frame comprises a main bonding surface, a first bonding surface, and a second bonding surface of the same polarity, the main bonding surface is located at the die attach block, the first bonding surface is located at the first extension block, and the second bonding surface is located at the second extension block.
10. The light emitter of claim 1, wherein the light emitter comprises a lens layer disposed on the housing, and the lens layer comprises at least one lens portion corresponding in position to at least one of the optoelectronic chips; the photoelectric chip is located in a projection area formed by orthographic projection of the lens part towards the top surface of the first conductive frame.
11. The light emitter of claim 10 wherein the projected area is circular and has a diameter, the light-exiting surface of at least one of the optoelectronic chips has a maximum outer diameter, and the diameter is between 110% and 140% of the maximum outer diameter.
12. The light emitter of claim 11, wherein a distance between a top end of at least one of the lens portions and at least one of the optoelectronic chips is 220% to 320% of a height of at least one of the optoelectronic chips.
13. The light emitter of claim 1, wherein the housing is surrounded by a receiving cavity, and at least one of the optoelectronic chips is located in the receiving cavity; the light emitter comprises a filling body filled in the accommodating groove, and at least one part of the photoelectric chip is at least partially embedded in the filling body.
14. The light emitter of claim 1, wherein the entire top surface of the first conductive frame and the entire top surface of any of the second conductive frames are exposed and coplanar with the top surface of the housing, and the light emitter comprises a lens layer; the lens layer is disposed on the top surface of the first conductive frame, the top surfaces of the plurality of second conductive frames, and the top surface of the housing, and at least one of the optoelectronic chips is embedded in the lens layer.
15. A light sensor, comprising:
the optical transmitter at least comprises a first conductive frame, a plurality of second conductive frames and at least one photoelectric chip, the second conductive frames and the first conductive frame are arranged at intervals, and the photoelectric chip is electrically coupled with the first conductive frame and at least one of the second conductive frames; and
at least one light receiver spaced apart from the light emitter, and at least one light receiver having a center of shape spaced apart from the center of shape of the light emitter by a configuration distance.
16. The optical sensor as defined in claim 15, wherein the number of at least one of said optical receivers is further defined as at least four, and the center of the shape of any one of said optical receivers is located on a circular arrangement path centered on the center of the shape of said optical transmitter and having a radius of said arrangement distance.
17. The optical sensor as claimed in claim 16, wherein the shape center of any two adjacent light receivers forms a chord length on the circular disposition path, and the chord lengths of at least four light receivers are equal.
CN202110357537.3A 2020-06-29 2021-04-01 Light emitter and light sensor Pending CN114121912A (en)

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