CN114121770A - 一种taiko取环固定装置及固定方法 - Google Patents

一种taiko取环固定装置及固定方法 Download PDF

Info

Publication number
CN114121770A
CN114121770A CN202111344949.XA CN202111344949A CN114121770A CN 114121770 A CN114121770 A CN 114121770A CN 202111344949 A CN202111344949 A CN 202111344949A CN 114121770 A CN114121770 A CN 114121770A
Authority
CN
China
Prior art keywords
ring
wafer
taiko
adsorption platform
iron
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202111344949.XA
Other languages
English (en)
Inventor
蔡永慧
蔡靖凯
谭秀文
苏亚青
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hua Hong Semiconductor Wuxi Co Ltd
Original Assignee
Hua Hong Semiconductor Wuxi Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hua Hong Semiconductor Wuxi Co Ltd filed Critical Hua Hong Semiconductor Wuxi Co Ltd
Priority to CN202111344949.XA priority Critical patent/CN114121770A/zh
Publication of CN114121770A publication Critical patent/CN114121770A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68721Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833Details of electrostatic chucks
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

本申请公开了一种TAIKO环固定装置,包括:取环工作台;吸附平台,设置在取环工作台上,晶圆吸附在吸附平台的表面,晶圆与吸附平台之间设置有膜;铁环,固定在膜的周边,通过与膜的作用力承载所述晶圆;夹爪,设置在铁环上,用于向铁环施加压力。本发明还提供了一种TAIKO环固定方法。在进行环切工艺时,仅使用吸附平台不使用垫圈吸附晶圆,利用吸附平台四周的夹爪固定铁环达到对整个晶圆的固定,实现了不同高度的支撑环均可用一套TAIKO取环固定装置进行环切,提高了产能,降低了作业成本和人力成本。

Description

一种TAIKO取环固定装置及固定方法
技术领域
本申请涉及半导体制造技术领域,具体涉及一种TAIKO取环固定装置及固定方法。
背景技术
Taiko减薄工艺是由日本DISCO公司开发的一种超薄减薄工艺,Taiko减薄工艺并不是对晶圆(wafer)即硅片的整个平面都减薄,而是仅对晶圆的中间部分进行减薄,晶圆的边缘部分不进行研磨减薄,不进行减薄的边缘部分的宽度约为2毫米~5毫米,并由该不进行减薄的边缘部分形成支撑环。
一般当硅片薄到一定程度,且面积较大时,其机械强度大大下降,以8英寸硅片为例,当硅片厚度<200微米时,硅片会发生卷曲,因此无法继续进行搬送、转移和加工。而采用Taiko减薄工艺之后,仅硅片的中间部分减薄,利用硅片的中间部分形成集成电路的器件;利用较厚的支撑环来保持整个硅片的机械强度,防止硅片发生卷曲,有利于后续工艺中对硅片的搬送、转移和加工。
Taiko减薄工艺主要包含贴膜,减薄,揭膜,背面工艺,切割膜(Dicing tape)贴附,环切等步骤。
在其中的环切工艺步骤一般采用机械切割或激光切割将支撑环切除或采用研磨的方法将所述支撑环去除。
环切工艺采用环切设备实现,图1a为现有的环切固定装置剖面结构示意图;图1b为现有的环切固定装置俯视结构示意图。参照图1a以及图1b,环切设备包括用于放置晶圆的吸附平台11(Chuck table),吸附平台11放置在取环工作台10上,在环切工艺中,吸附平台11通过真空或静电的方式将晶圆12吸附在吸附平台11表面,按照图1b所示的晶圆切割位置12A将支撑环121进行切除,进行切环之前需要将晶圆12的表面吸附在切割胶带13如紫外线照射胶带(UV膜)上,采用向上抬取的方式取环,晶圆12位于切割胶带13的顶部,即在吸附平台11和晶圆之12间具有一切割胶带13,切割胶带13通过设置在取环工作台10上的铁环14承载晶圆12,铁环14置于切割胶带13上,用于向切割胶带13施加压力,将压力传递给切割胶带13应用于承载晶圆12。为了更好地承载晶圆12,会在晶圆12的支撑环121处设置垫圈15,承载晶圆12向下的压力。在作业过程中,晶圆12正面朝上,背面扣在吸附平台11上面,支撑环121与垫圈15接触,晶圆12的减薄区域与吸附平台11表面接触,吸附平台11的高度固定,然而由于不同工艺产生的支撑环121的高度不尽相同,在环切固定过程中,需要替换不同高度的垫圈15以匹配不同高度的支撑环121,增加制程的繁琐度,运行成本增加。
发明内容
本申请提供了一种TAIKO取环固定装置及固定方法,以解决晶圆在环切固定中替换不同高度的垫圈增加制程繁琐度的问题。
一方面,本申请实施例提供了一种TAIKO环固定装置,包括:取环工作台;吸附平台,设置在所述取环工作台上,晶圆吸附在所述吸附平台的表面,所述晶圆与所述吸附平台之间设置有膜;铁环,固定在所述膜的周边,通过与所述膜的作用力承载所述晶圆;夹爪,设置在所述铁环上,用于向所述铁环施加压力。
进一步地,所述晶圆的厚度在20um~250um之间。
进一步地,所述夹爪通过旋转或上下移动的方式固定设置在所述铁环上。
进一步地,所述夹爪的数量为四个,匀布在所述铁环的四周。
进一步地,所述吸附平台的横截面为圆形。
进一步地,所述膜包括紫外线照射胶带或热敏胶带。
进一步地,所述晶圆经过TAIKO减薄,所述晶圆的中间部分减薄到需要的厚度,所述晶圆的边缘部分不被减薄而形成所述支撑环,所述支撑环悬空。
为解决上述技术问题,本发明提供一种TAIKO环固定方法,设置在取环工作台上的吸附平台上吸附有晶圆,在所述吸附平台和所述晶圆之间设置有膜,在所述膜的周边固定铁环,设置在铁环上的夹爪向铁环施加压力。
进一步地,在TAIKO环固定方法中,所述夹爪通过旋转或上下移动的方式固定设置在所述铁环上。
进一步地,在TAIKO环固定方法中,所述晶圆经过TAIKO减薄,所述晶圆的中间部分减薄到需要的厚度,所述晶圆的边缘部分不被减薄而形成所述支撑环,所述支撑环悬空。
本申请技术方案,至少包括如下优点:
在进行环切工艺时,仅使用吸附平台不使用垫圈吸附晶圆,利用吸附平台四周的夹爪固定铁环达到对整个晶圆的固定,实现了不同高度的支撑环均可用一套TAIKO取环固定装置进行环切,提高了产能,降低了作业成本和人力成本。
附图说明
为了更清楚地说明本申请具体实施方式或现有技术中的技术方案,下面将对具体实施方式或现有技术描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图是本申请的一些实施方式,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。
图1a为现有的环切固定装置剖面结构示意图
图1b为现有的环切固定装置俯视结构示意图;
图2a为本发明实施例提供的TAIKO取环固定装置剖面结构示意图;
图2b为本发明实施例提供的TAIKO取环固定装置俯视结构示意图。
具体实施方式
下面将结合附图,对本申请中的技术方案进行清楚、完整的描述,显然,所描述的实施例是本申请的一部分实施例,而不是全部的实施例。基于本申请中的实施例,本领域普通技术人员在不做出创造性劳动的前提下所获得的所有其它实施例,都属于本申请保护的范围。
在本申请的描述中,需要说明的是,术语“中心”、“上”、“下”、“左”、“右”、“竖直”、“水平”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系,仅是为了便于描述本申请和简化描述,而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作,因此不能理解为对本申请的限制。
在本申请的描述中,需要说明的是,除非另有明确的规定和限定,术语“安装”、“相连”、“连接”应做广义理解,例如,可以是固定连接,也可以是可拆卸连接,或一体地连接;可以是机械连接,也可以是电气连接;可以是直接相连,也可以通过中间媒介间接相连,还可以是两个元件内部的连通,可以是无线连接,也可以是有线连接。对于本领域的普通技术人员而言,可以具体情况理解上述术语在本申请中的具体含义。
此外,下面所描述的本申请不同实施方式中所涉及的技术特征只要彼此之间未构成冲突就可以相互结合。
图2a为本发明实施例提供的TAIKO取环固定装置剖面结构示意图;图2b为本发明实施例提供的TAIKO取环固定装置俯视结构示意图。参照图2a以及图2b,一种TAIKO环固定装置,包括:取环工作台20;吸附平台21,设置在所述取环工作台20上,晶圆22吸附在所述吸附平台21的表面,所述晶圆22与所述吸附平台21之间设置有膜23;铁环24,固定在所述膜23的周边,通过与所述膜23的作用力承载所述晶圆22;夹爪25,设置在所述铁环24上,用于向所述铁环24施加压力。
本发明实施例适用于晶圆22的厚度在20um~250um之间,在环切工艺中,按照图2b所示的晶圆切割位置22A将支撑环221进行切除。
进一步地,通过在铁环24上设置夹爪25向铁环24施加压力,进一步将施加的压力传递至膜23,使膜23获得更多的支撑力以便承载晶圆22,在本发明实施例中,所述膜包括紫外线照射胶带或热敏胶带。夹爪25通过旋转或上下移动的方式固定设置在所述铁环24上,夹爪25的数量为四个,匀布在铁环24的四周,吸附平台21的横截面为圆形。设置有夹爪25的TAIKO取环固定装置中的晶圆22处于悬空状态,去掉了传统TAIKO取环固定装置中设在晶圆22的支撑环221下的垫圈。处于悬空状态的晶圆22即使在支撑环221处没有垫圈,由于夹爪25施加的压力使膜23获得了足够的支撑力承载晶圆22。
本发明还提供一种TAIKO环固定方法,设置在取环工作台20上的吸附平台21上吸附有晶圆22,在所述吸附平台21和所述晶圆22之间设置有膜23,在所述膜23的周边固定铁环24,设置在铁环24上的夹爪25向铁环24施加压力。所述晶圆22的中间部分减薄到需要的厚度,所述晶圆22的边缘部分不被减薄而形成所述支撑环221,所述支撑环221悬空。支撑环221不再需要如背景技术中描述的垫圈的支撑力作用,支撑环221悬空也能使整个晶圆22固定,实现了不同厚度支撑环221的晶圆22都能使用同一套TAIKO取环固定装置进行环切。
综上所述,本申请实施例中,在进行环切工艺时,仅使用吸附平台不使用垫圈吸附晶圆,利用吸附平台四周的夹爪固定铁环达到对整个晶圆的固定,实现了不同高度的支撑环均可用一套TAIKO取环固定装置进行环切,提高了产能,降低了作业成本和人力成本。
显然,上述实施例仅仅是为清楚地说明所作的举例,而并非对实施方式的限定。对于所属领域的普通技术人员来说,在上述说明的基础上还可以做出其它不同形式的变化或变动。这里无需也无法对所有的实施方式予以穷举。而由此所引伸出的显而易见的变化或变动仍处于本申请创造的保护范围之中。

Claims (10)

1.一种TAIKO环固定装置,其特征在于,包括:
取环工作台;
吸附平台,设置在所述取环工作台上,晶圆吸附在所述吸附平台的表面,所述晶圆与所述吸附平台之间设置有膜;
铁环,固定在所述膜的周边,通过与所述膜的作用力承载所述晶圆;
夹爪,设置在所述铁环上,用于向所述铁环施加压力。
2.根据权利要求1所述的TAIKO环固定装置,其特征在于,所述晶圆的厚度在20um~250um之间。
3.根据权利要求1所述的TAIKO环固定装置,其特征在于,所述夹爪通过旋转或上下移动的方式固定设置在所述铁环上。
4.根据权利要求1所述的TAIKO环固定装置,其特征在于,所述夹爪的数量为四个,匀布在所述铁环的四周。
5.根据权利要求1所述的TAIKO环固定装置,其特征在于,所述吸附平台的横截面为圆形。
6.根据权利要求1所述的TAIKO环固定装置,其特征在于,所述膜包括紫外线照射胶带或热敏胶带。
7.根据权利要求1所述的TAIKO环固定装置,其特征在于,所述晶圆经过TAIKO减薄,所述晶圆的中间部分减薄到需要的厚度,所述晶圆的边缘部分不被减薄而形成所述支撑环,所述支撑环悬空。
8.一种TAIKO环固定方法,其特征在于,设置在取环工作台上的吸附平台上吸附有晶圆,在所述吸附平台和所述晶圆之间设置有膜,在所述膜的周边固定铁环,设置在铁环上的夹爪向铁环施加压力。
9.根据权利要求8所述的一种TAIKO环固定方法,其特征在于,所述夹爪通过旋转或上下移动的方式固定设置在所述铁环上。
10.根据权利要求8所述的一种TAIKO环固定方法,其特征在于,所述晶圆经过TAIKO减薄,所述晶圆的中间部分减薄到需要的厚度,所述晶圆的边缘部分不被减薄而形成所述支撑环,所述支撑环悬空。
CN202111344949.XA 2021-11-15 2021-11-15 一种taiko取环固定装置及固定方法 Pending CN114121770A (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202111344949.XA CN114121770A (zh) 2021-11-15 2021-11-15 一种taiko取环固定装置及固定方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202111344949.XA CN114121770A (zh) 2021-11-15 2021-11-15 一种taiko取环固定装置及固定方法

Publications (1)

Publication Number Publication Date
CN114121770A true CN114121770A (zh) 2022-03-01

Family

ID=80395426

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202111344949.XA Pending CN114121770A (zh) 2021-11-15 2021-11-15 一种taiko取环固定装置及固定方法

Country Status (1)

Country Link
CN (1) CN114121770A (zh)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114260907A (zh) * 2022-03-03 2022-04-01 江苏京创先进电子科技有限公司 一种取环装置、晶圆加工设备及取环方法
CN114536215A (zh) * 2022-04-27 2022-05-27 绍兴中芯集成电路制造股份有限公司 取环装置及方法
CN114582713A (zh) * 2022-03-11 2022-06-03 江苏京创先进电子科技有限公司 晶圆加工方法及晶圆加工装置
CN115338993A (zh) * 2022-08-12 2022-11-15 华虹半导体(无锡)有限公司 Taiko取环装置及取环方法

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114260907A (zh) * 2022-03-03 2022-04-01 江苏京创先进电子科技有限公司 一种取环装置、晶圆加工设备及取环方法
CN114260907B (zh) * 2022-03-03 2022-06-17 江苏京创先进电子科技有限公司 一种取环装置、晶圆加工设备及取环方法
CN114582713A (zh) * 2022-03-11 2022-06-03 江苏京创先进电子科技有限公司 晶圆加工方法及晶圆加工装置
CN114582713B (zh) * 2022-03-11 2023-01-24 江苏京创先进电子科技有限公司 晶圆加工方法及晶圆加工装置
CN114536215A (zh) * 2022-04-27 2022-05-27 绍兴中芯集成电路制造股份有限公司 取环装置及方法
CN115338993A (zh) * 2022-08-12 2022-11-15 华虹半导体(无锡)有限公司 Taiko取环装置及取环方法

Similar Documents

Publication Publication Date Title
CN114121770A (zh) 一种taiko取环固定装置及固定方法
TWI280630B (en) Semiconductor substrate jig and method of manufacturing a semiconductor device
US7294531B2 (en) Wafer level chip stack method
KR100996842B1 (ko) 고체 촬상 소자 모듈의 제조 방법
US5476566A (en) Method for thinning a semiconductor wafer
US7520309B2 (en) Method for adhering protecting tape of wafer and adhering apparatus
US7129118B2 (en) Protective tape removing apparatus and method of assembling semiconductor package using the same
CN110802509B (zh) 保护部件形成装置
KR20170132558A (ko) 웨이퍼 분리 장치
KR20140138898A (ko) 초박막 웨이퍼의 임시 본딩을 위한 방법 및 장치
US7960247B2 (en) Die thinning processes and structures
KR102654506B1 (ko) 웨이퍼 분리 방법 및 웨이퍼 분리 장치
US20110189928A1 (en) Wafer mount tape, wafer processing apparatus and method of using the same for use in thinning wafers
CN109417045A (zh) 调准夹具、调准方法及转移粘接方法
WO2019013022A1 (ja) 搬送装置、基板処理システム、搬送方法、および基板処理方法
TWI703670B (zh) 支撐體分離裝置及支撐體分離方法
TW201921545A (zh) 基板處理系統及基板處理方法
US20150056727A1 (en) Method of inspecting semiconductor device, method of fabricating semiconductor device, and inspection tool
US10964597B2 (en) Element chip manufacturing method
TWI722206B (zh) 支撐體分離裝置、及支撐體分離方法
CN113380613A (zh) 晶圆减薄加工方法
US9199396B2 (en) Substrate carrier for molding electronic devices
JP2001319905A (ja) バキュームチャック
JP2008016751A (ja) 半導体チップの保護テープ貼付方法
JPS6323334A (ja) 半導体素子処理方法

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination