CN114121730B - High-temperature ozone oxidation device for silicon wafer production - Google Patents

High-temperature ozone oxidation device for silicon wafer production Download PDF

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Publication number
CN114121730B
CN114121730B CN202111397626.7A CN202111397626A CN114121730B CN 114121730 B CN114121730 B CN 114121730B CN 202111397626 A CN202111397626 A CN 202111397626A CN 114121730 B CN114121730 B CN 114121730B
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side wall
lateral wall
lamp cavity
ozone
fixedly connected
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CN114121730A (en
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常亮
居建华
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Wuxi Sirui Electronic Equipment Technology Co ltd
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Wuxi Sirui Electronic Equipment Technology Co ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67098Apparatus for thermal treatment
    • H01L21/67109Apparatus for thermal treatment mainly by convection
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67098Apparatus for thermal treatment
    • H01L21/67115Apparatus for thermal treatment mainly by radiation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67706Mechanical details, e.g. roller, belt

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

The invention discloses a high-temperature ozone oxidation device for silicon wafer production, which comprises a workbench and a shell, wherein a feed inlet and a discharge outlet are formed in the shell, a conveying mechanism for conveying silicon wafers is arranged on the upper side wall of the workbench and is driven by a driving mechanism, and a plurality of groups of heating mechanisms for heating the silicon wafers and oxidation mechanisms for oxidizing the surfaces of the silicon wafers are arranged in the shell. This kind of high temperature ozone oxidation device is used in silicon chip production, adopt ceramic roll axis to carry the silicon chip, better high temperature resistance has, and simultaneously, set up a plurality of built-in runners in lamp chamber group, to letting in recirculated cooling water in the built-in runner, thereby lower lamp chamber and last lamp chamber are cooled down and are handled, avoid the high temperature to cause the damage to conveying mechanism, and, be provided with the sealing washer between ceramic roll axis and transmission shaft, play the bradyseism effect, can avoid the influence that vibrations caused in the transportation process, guarantee its life and conveying efficiency.

Description

High-temperature ozone oxidation device for silicon wafer production
Technical Field
The invention relates to the technical field of silicon wafer production, in particular to a high-temperature ozone oxidation device for silicon wafer production.
Background
Ozone is a strong oxidant with environmental protection, is widely applied to the fields of disinfection, sterilization, organic pollutant removal, decoloration and deodorization, food preservation, air purification and the like, and has the effectiveness which is well accepted by people. The existing high-temperature ozone oxidation device for producing the silicon wafer mainly comprises a conveying mechanism, a heating mechanism and an ozone oxidation mechanism, and when the device is used, ozone with certain concentration is adopted to oxidize the surface of the silicon wafer at high temperature through the ozone oxidation mechanism, so that a layer of oxidation film is formed to protect the silicon wafer.
However, when the high-temperature ozone oxidation device for silicon wafer production is used, the conveying mechanism is easily damaged due to high temperature and vibration, frequent maintenance and replacement are needed, manpower and material resources are wasted, and meanwhile, the production efficiency of the silicon wafer is affected.
Disclosure of Invention
In order to realize the purpose, the invention adopts the following technical scheme: a high-temperature ozone oxidation device for silicon wafer production comprises a workbench and a shell, wherein a feed inlet and a discharge outlet are formed in the shell, a conveying mechanism used for conveying silicon wafers is arranged on the upper side wall of the workbench and is driven by a driving mechanism, a plurality of groups of heating mechanisms used for heating the silicon wafers and oxidation mechanisms used for oxidizing the surfaces of the silicon wafers are arranged in the shell, and the heating mechanisms and the oxidation mechanisms are located above the conveying mechanism;
the conveying mechanism comprises two fixed plates which are fixedly connected to the upper side wall of the workbench and symmetrically arranged, the two opposite side walls of the fixed plates are rotatably connected with a plurality of ceramic rolling shafts arranged in an array through transmission shafts, the ceramic rolling shafts are sleeved on the side walls of the transmission shafts, a cushioning component is arranged between each ceramic rolling shaft and each transmission shaft, and a baffle is fixedly sleeved on the side wall of each transmission shaft;
each group heating mechanism includes lamp cavity group, and lamp cavity group includes lamp cavity and last lamp cavity down, lamp cavity fixed connection is on the last lateral wall of workstation down, and goes up the lamp cavity setting on the last lateral wall of fixed plate, the pottery roll axis is inserted and is established in lamp cavity down, and the both ends fixedly connected with lamp housing in lamp cavity, it is provided with the heating fluorescent tube to go up the lamp cavity, and is provided with the cooling subassembly in the lamp cavity group.
Preferably, the cushioning component comprises a plurality of annular grooves formed in the side wall of each transmission shaft, sealing rings are sleeved in the annular grooves, and the sealing rings are abutted to the inner side wall of the ceramic rolling shaft.
Preferably, actuating mechanism includes fixed connection the driving motor on the workstation lateral wall, driving motor's output runs through the lateral wall and the fixedly connected with drive pulley of workstation, and lies in the lateral wall and the fixedly connected with driven pulley of the fixed plate of running through with the one end of the transmission shaft of one side, the lateral wall of workstation is provided with a plurality of take-up pulleys, and passes through belt transmission between driven pulley, take-up pulley and the drive pulley.
Preferably, the cooling component comprises a built-in flow channel arranged in the lamp cavity group, a water inlet pipe and a water outlet pipe are arranged on the side wall of the built-in flow channel, and the other ends of the water inlet pipe and the water outlet pipe penetrate through the side wall of the lamp cavity group.
Preferably, a plurality of first heat dissipation grooves arranged in an array are formed in the side wall of each built-in flow channel.
Preferably, a plurality of second heat dissipation grooves arranged in an array are formed in the side wall of the lamp cavity shell group.
Preferably, each group the oxidation mechanism includes the first section bar that two symmetries set up on two relative lateral walls of fixed plate of fixed connection, and the last lateral wall fixedly connected with ozone frame of first section bar, the second section bar that two symmetries of the last lateral wall fixedly connected with of ozone frame set up, and the last lateral wall fixedly connected with roof of second section bar, the below of ozone frame is provided with the spraying board of U-shaped, and sprays the lower lateral wall of board and spray the panel through support bar fixedly connected with, the lateral wall that sprays the panel is provided with a plurality of gas pockets, the lateral wall of ozone frame is provided with a plurality of ozone shower nozzles, and ozone shower nozzle runs through the lower lateral wall setting that sprays the board.
The technical scheme provided by the invention has the beneficial effects that:
1. according to the high-temperature ozone oxidation device for silicon wafer production, the buffering component and the like are arranged, when silicon wafers are conveyed, the driving motor is started, the driving motor rotates to drive the driving belt pulley to rotate, the driven belt pulleys are driven to rotate through the tensioning pulley and the belt, the driving shaft and the ceramic rolling shaft are driven to synchronously rotate through the rotation of the driven belt pulley, so that the silicon wafers are conveyed, the ceramic rolling shaft has better high-temperature resistance, in addition, in the conveying process, the sealing ring is arranged between the ceramic rolling shaft and the driving shaft, the buffering effect is achieved, the influence caused by vibration in the conveying process can be avoided, the damage of the conveying mechanism is avoided, the service life of the conveying mechanism is ensured, and the conveying efficiency is ensured;
2. according to the high-temperature ozone oxidation device for silicon wafer production, the cooling component and the like are arranged, when the silicon wafer is heated at a high temperature, the heating lamp tube is started to heat the silicon wafer, the built-in runners are arranged in the lamp cavity group, circulating cooling water is ensured to be introduced into the built-in runners through the arrangement of the water inlet pipe and the water outlet pipe, so that the lower lamp cavity and the upper lamp cavity are cooled, the side wall of the built-in runner is provided with the first heat dissipation grooves, the side wall of the lamp cavity group is provided with the second heat dissipation grooves, the heat dissipation area is increased, the cooling effect is ensured, the conveying mechanism is prevented from being damaged by the high temperature, and the service life and the conveying efficiency of the conveying mechanism are ensured.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
FIG. 1 is a schematic perspective view of the present invention;
FIG. 2 is a schematic view of the internal structure of the present invention;
FIG. 3 is a schematic diagram of the upper lamp chamber of the present invention;
FIG. 4 is a schematic view of a shock absorption assembly of the present invention;
FIG. 5 is a schematic cross-sectional structural view of the present invention;
FIG. 6 is a schematic view of another perspective of the cross-sectional structure of the present invention;
FIG. 7 is an enlarged schematic view of the structure at A in FIG. 2;
FIG. 8 is an enlarged schematic view of the structure at B in FIG. 4;
FIG. 9 is an enlarged schematic view of the structure at C in FIG. 5;
fig. 10 is an enlarged schematic view of the structure at D in fig. 6.
In the figure: 101. a work table; 102. a housing; 103. a feed inlet; 104. a discharge port; 201. a fixing plate; 202. a drive shaft; 203. a ceramic rolling shaft; 204. a baffle plate; 301. a driven pulley; 302. a drive motor; 303. a drive pulley; 304. a tension wheel; 305. a belt; 401. a lower lamp cavity; 402. an upper lamp cavity; 403. a lamp housing; 404. heating the lamp tube; 501. a flow passage is arranged inside; 502. a water inlet pipe; 503. a water outlet pipe; 6. a second heat sink; 701. a first profile; 702. an ozone frame; 703. a second profile; 704. a top plate; 705. a spray plate; 706. spraying the panel; 707. an ozone spray head; 708. a supporting strip; 709. air holes; 801. an annular groove; 802. a seal ring; 9. a first heat sink.
Detailed Description
In order to make the technical solutions of the present invention better understood, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the following description, for clarity and conciseness of description, not all of the various components shown in the figures are described. The various components shown in the figures provide those skilled in the art with a fully enabling disclosure of the invention. The operation of many of the components is familiar and obvious to those skilled in the art.
Example (b):
as shown in fig. 1-10, this embodiment provides a high temperature ozone oxidation apparatus for silicon wafer production, which includes a worktable 101 and a casing 102, a feed inlet 103 and a discharge outlet 104 are disposed on the casing 102, a conveying mechanism for conveying silicon wafers is disposed on an upper side wall of the worktable 101, and the conveying mechanism is driven by a driving mechanism, a plurality of sets of heating mechanisms for heating silicon wafers and oxidation mechanisms for oxidizing surfaces of silicon wafers are disposed in the casing 102, and the heating mechanisms and the oxidation mechanisms are located above the conveying mechanism, and the silicon wafers are conveyed by using a ceramic rolling shaft 203, which has better high temperature resistance, meanwhile, a plurality of built-in flow channels 501 are disposed in a lamp chamber set, circulating cooling water is introduced into the built-in flow channels 501, and a plurality of first heat dissipation grooves 9 are disposed on a side wall of the built-in flow channels 501, a plurality of second heat dissipation grooves 6 are disposed on a side wall of the lamp chamber set, the heat dissipation area is increased, so that the lower lamp cavity 401 and the upper lamp cavity 402 are cooled, the conveying mechanism is prevented from being damaged by high temperature, the sealing ring 802 is arranged between the ceramic rolling shaft 203 and the transmission shaft 202, the cushioning effect is achieved, the influence caused by vibration in the conveying process can be avoided, and the service life and the conveying efficiency of the conveying mechanism are guaranteed;
the conveying mechanism comprises two fixing plates 201 which are fixedly connected to the upper side wall of the workbench 101 and symmetrically arranged, two opposite side walls of the fixing plates 201 are rotatably connected with a plurality of ceramic rolling shafts 203 which are arranged in an array mode through a transmission shaft 202, the ceramic rolling shafts 203 are sleeved on the side walls of the transmission shaft 202, a shock absorption assembly is arranged between each ceramic rolling shaft 203 and the corresponding transmission shaft 202, a baffle plate 204 is fixedly sleeved on the side wall of each transmission shaft 202, the transmission shaft 202 and the ceramic rolling shafts 203 are driven to synchronously rotate by rotation of a driven belt pulley 301, so that silicon wafers are conveyed, and the ceramic rolling shafts 203 have better high-temperature resistance;
each group of heating mechanism includes lamp chamber group, and lamp chamber group includes lamp chamber 401 and last lamp chamber 402 down, lamp chamber 401 fixed connection is on workstation 101's last lateral wall down, and go up lamp chamber 402 and set up on the last lateral wall of fixed plate 201, pottery roll axis 203 inserts and establishes in lamp chamber 401 down, and the both ends fixedly connected with lamp housing 403 of going up lamp chamber 402, upward be provided with heating fluorescent tube 404 in the lamp chamber 402, and lamp chamber group is provided with the cooling subassembly, when carrying out high temperature heating to the silicon chip, start heating fluorescent tube 404 and heat the silicon chip, dispel the heat to lamp chamber 401 and last lamp chamber 402 down through the cooling subassembly.
Preferably, the cushioning component comprises a plurality of annular grooves 801 formed in the side wall of each transmission shaft 202, sealing rings 802 are sleeved in the annular grooves 801, the sealing rings 802 abut against the inner side wall of the ceramic rolling shaft 203, in the conveying process, the sealing rings 802 are arranged between the ceramic rolling shaft 203 and the transmission shaft 202, the cushioning effect is achieved, the influence caused by vibration in the conveying process can be avoided, the damage to the conveying mechanism is avoided, and the service life and the conveying efficiency are guaranteed.
Preferably, actuating mechanism includes driving motor 302 of fixed connection on the workstation 101 lateral wall, driving motor 302's output runs through the lateral wall and the fixedly connected with drive pulley 303 of workstation 101, and lie in the lateral wall and the fixedly connected with driven pulley 301 of fixed plate 201 of the one end of transmission shaft 202 with one side, the lateral wall of workstation 101 is provided with a plurality of take-up pulleys 304, and driven pulley 301, through the transmission of belt 305 between take-up pulley 304 and the drive pulley 303, when carrying the silicon chip, start driving motor 302, driving motor 302's rotation drives the rotation of drive pulley 303, and then drive each driven pulley 301 through take-up pulley 304 and belt 305 and rotate.
Preferably, the cooling component includes built-in runner 501 arranged in the lamp cavity group, and the side wall of the built-in runner 501 is provided with a water inlet pipe 502 and a water outlet pipe 503, the other ends of the water inlet pipe 502 and the water outlet pipe 503 penetrate through the side wall of the lamp cavity group, a plurality of built-in runners 501 are arranged in the lamp cavity group, and through the arrangement of the water inlet pipe 502 and the water outlet pipe 503, the circulation cooling water is ensured to be introduced into the built-in runners 501, so that the cooling treatment is performed on the lower lamp cavity 401 and the upper lamp cavity 402.
Preferably, the side wall of each built-in flow channel 501 is provided with a plurality of first heat dissipation grooves 9 arranged in an array, so that the heat dissipation area is increased, and the cooling effect is ensured.
Preferably, the side wall of the lamp cavity shell group is provided with a plurality of second radiating grooves 6 arranged in an array, so that the radiating area is increased, and the cooling effect is ensured.
Preferably, each group of oxidation mechanisms comprises two first section bars 701 which are symmetrically arranged and fixedly connected on two opposite side walls of the fixing plate 201, an ozone frame 702 is fixedly connected to an upper side wall of each first section bar 701, two second section bars 703 which are symmetrically arranged and fixedly connected to an upper side wall of each ozone frame 702, a top plate 704 is fixedly connected to an upper side wall of each second section bar 703, a U-shaped spraying plate 705 is arranged below the ozone frame 702, a spraying panel 706 is fixedly connected to a lower side wall of each spraying plate 705 through a supporting bar 708, a plurality of air holes 709 are arranged on a side wall of each spraying panel 706, a plurality of ozone nozzles 707 are arranged on a side wall of each ozone frame 702, each ozone nozzle 707 penetrates through the lower side wall of each spraying plate 705, each ozone nozzle 707 is connected with an external ozone generator through a connecting pipe, and ozone is sprayed on the surface of the silicon wafer after passing through the ozone nozzles 707 and the air holes 709 on the side wall of each spraying panel 706, the ozone gas can be uniformly sprayed on the surface of the silicon wafer, and the uniformity of the surface oxidation of the silicon wafer is ensured.
The working principle is as follows: when the silicon wafer conveying device is used, firstly, when a silicon wafer is conveyed, the driving motor 302 is started, the driving pulley 303 is driven to rotate by the rotation of the driving motor 302, and then the driven pulleys 301 are driven to rotate by the tensioning pulley 304 and the belt 305, the driving shaft 202 and the ceramic rolling shaft 203 are driven to synchronously rotate by the rotation of the driven pulleys 301, so that the silicon wafer is conveyed, the ceramic rolling shaft 203 has better high-temperature resistance, in addition, in the conveying process, the sealing ring 802 is arranged between the ceramic rolling shaft 203 and the driving shaft 202, a cushioning effect is realized, the influence caused by vibration in the conveying process can be avoided, the damage of the conveying mechanism is avoided, the service life of the conveying mechanism is ensured, and the conveying efficiency is ensured;
and, when carrying out high temperature heating to the silicon chip, start heating fluorescent tube 404 and heat the silicon chip, through set up a plurality of built-in runners 501 in the lamp chamber group, and, through the setting of inlet tube 502 and outlet pipe 503, guarantee to let in recirculated cooling water in built-in runner 501, thereby lower lamp chamber 401 and last lamp chamber 402 carry out the cooling treatment, and, the lateral wall of built-in runner 501 is provided with a plurality of first radiating grooves 9, the lateral wall of lamp chamber group is provided with a plurality of second radiating grooves 6, increase heat radiating area, guarantee the cooling effect, avoid high temperature to cause the damage to conveying mechanism, guarantee its life and conveying efficiency.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and amendments can be made without departing from the principle of the present invention, and these modifications and amendments should also be considered as the protection scope of the present invention.

Claims (2)

1. A high-temperature ozone oxidation device for silicon wafer production comprises a workbench (101) and a shell (102), wherein a feed inlet (103) and a discharge outlet (104) are formed in the shell (102), and the high-temperature ozone oxidation device is characterized in that a conveying mechanism for conveying silicon wafers is arranged on the upper side wall of the workbench (101), the conveying mechanism is driven by a driving mechanism, a plurality of groups of heating mechanisms for heating the silicon wafers and oxidation mechanisms for oxidizing the surfaces of the silicon wafers are arranged in the shell (102), and the heating mechanisms and the oxidation mechanisms are located above the conveying mechanism;
the conveying mechanism comprises two fixing plates (201) which are fixedly connected to the upper side wall of the workbench (101) and symmetrically arranged, two opposite side walls of the fixing plates (201) are rotatably connected with a plurality of ceramic rolling shafts (203) arranged in an array through transmission shafts (202), the ceramic rolling shafts (203) are sleeved on the side walls of the transmission shafts (202), a shock absorption assembly is arranged between each ceramic rolling shaft (203) and each transmission shaft (202), and a baffle (204) is fixedly sleeved on each side wall of each transmission shaft (202); the shock absorption assembly comprises a plurality of annular grooves (801) formed in the side wall of each transmission shaft (202), sealing rings (802) are sleeved in the annular grooves (801), and the sealing rings (802) are abutted to the inner side wall of the ceramic rolling shaft (203);
each group of heating mechanisms comprises a lamp cavity group, the lamp cavity group comprises a lower lamp cavity (401) and an upper lamp cavity (402), the lower lamp cavity (401) is fixedly connected to the upper side wall of the workbench (101), the upper lamp cavity (402) is arranged on the upper side wall of the fixing plate (201), the ceramic rolling shaft (203) is inserted into the lower lamp cavity (401), two ends of the upper lamp cavity (402) are fixedly connected with lamp shade shells (403), a heating lamp tube (404) is arranged in the upper lamp cavity (402), and a cooling assembly is arranged in the lamp cavity group; the cooling assembly comprises built-in runners (501) arranged in the lamp cavity group, a water inlet pipe (502) and a water outlet pipe (503) are arranged on the side wall of each built-in runner (501), the other ends of the water inlet pipe (502) and the water outlet pipe (503) penetrate through the side wall of the lamp cavity group, and a plurality of first heat dissipation grooves (9) arranged in an array mode are formed in the side wall of each built-in runner (501);
each group the oxidation mechanism includes first section bar (701) that fixed connection two symmetries set up on two relative lateral walls of fixed plate (201), and the last lateral wall fixedly connected with ozone frame (702) of first section bar (701), second section bar (703) that the last lateral wall fixedly connected with of ozone frame (702) two symmetries set up, and the last lateral wall fixedly connected with roof (704) of second section bar (703), the below of ozone frame (702) is provided with the spray board (705) of U-shaped, and the lower lateral wall that sprays board (705) passes through support bar (708) fixedly connected with spray panel (706), the lateral wall that sprays panel (706) is provided with a plurality of gas pockets (709), the lateral wall of ozone frame (702) is provided with a plurality of ozone shower nozzles (707), and ozone shower nozzle (707) run through the lower lateral wall setting that sprays board (705).
2. The high-temperature ozone oxidation device for silicon wafer production according to claim 1, wherein: actuating mechanism includes driving motor (302) of fixed connection on workstation (101) lateral wall, the output of driving motor (302) runs through the lateral wall and the fixedly connected with drive pulley (303) of workstation (101), and lies in the lateral wall and the fixedly connected with driven pulley (301) of fixed plate (201) are run through to the one end of transmission shaft (202) with one side, the lateral wall of workstation (101) is provided with a plurality of take-up pulleys (304), and passes through belt (305) transmission between driven pulley (301), take-up pulley (304) and drive pulley (303).
CN202111397626.7A 2021-11-23 2021-11-23 High-temperature ozone oxidation device for silicon wafer production Active CN114121730B (en)

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CN117019715B (en) * 2023-10-10 2023-12-22 泰州市胤鸿机械设备有限公司 Cleaning device for waste silicon wafer recovery

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CN202840810U (en) * 2012-10-09 2013-03-27 浙江胜华波电器股份有限公司 Transmission buffer device for motor
CN111916506A (en) * 2020-08-26 2020-11-10 苏州昊建自动化系统有限公司 High-temperature oxidation process for silicon wafer

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CN204067313U (en) * 2014-07-11 2014-12-31 湖南红太阳光电科技有限公司 A kind of continuous vacuum ultraviolet light ozone surface clean and oxidation modification equipment
CN207572340U (en) * 2017-10-24 2018-07-03 苏州阿特斯阳光电力科技有限公司 A kind of silicon chip drying oxidation unit
JP7304768B2 (en) * 2019-08-16 2023-07-07 株式会社Screenホールディングス Heat treatment equipment and method for cleaning heat treatment equipment

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Publication number Priority date Publication date Assignee Title
CN202840810U (en) * 2012-10-09 2013-03-27 浙江胜华波电器股份有限公司 Transmission buffer device for motor
CN111916506A (en) * 2020-08-26 2020-11-10 苏州昊建自动化系统有限公司 High-temperature oxidation process for silicon wafer

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