CN114121575A - Sine-shaped slotted staggered sine waveguide - Google Patents

Sine-shaped slotted staggered sine waveguide Download PDF

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Publication number
CN114121575A
CN114121575A CN202111474401.7A CN202111474401A CN114121575A CN 114121575 A CN114121575 A CN 114121575A CN 202111474401 A CN202111474401 A CN 202111474401A CN 114121575 A CN114121575 A CN 114121575A
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China
Prior art keywords
sine
sinusoidal
grid
sub
waveguide
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CN202111474401.7A
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Chinese (zh)
Inventor
朱俊宛
路志刚
段景瑞
刘子璇
钟宝辉
王泽川
陈海峰
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Yangtze River Delta Research Institute of UESTC Huzhou
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Yangtze River Delta Research Institute of UESTC Huzhou
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J23/00Details of transit-time tubes of the types covered by group H01J25/00
    • H01J23/16Circuit elements, having distributed capacitance and inductance, structurally associated with the tube and interacting with the discharge
    • H01J23/24Slow-wave structures, e.g. delay systems

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Abstract

The invention relates to the field of terahertz waves, and discloses a sine-shaped slotted staggered sine waveguide, which penetrates through the wave crests of an upper sub sine grid and the wave crests of a lower sub sine grid along the periodic direction to form a sine-shaped slot, then moves the lower sub sine grid upwards or descends to enable the wave crests of the upper sub sine grid and the wave crests of the lower sub sine grid to be arranged in a staggered mode in the direction perpendicular to the periodic direction, and a plurality of slots are formed into an electron beam channel after being staggered. The sine-shaped slotted staggered sine waveguide has higher coupling resistance value, and simultaneously improves the dispersion characteristic, namely the interaction capacity of electron beams and electromagnetic waves is increased, so that the output power, the gain and the interaction efficiency of the traveling wave tube are improved.

Description

Sine-shaped slotted staggered sine waveguide
Technical Field
The invention relates to the field of terahertz waves, in particular to a sine-shaped slotted staggered sine waveguide.
Background
The development of the electromagnetic spectrum of the terahertz waveband is a hot subject in the field of electronics at present, and the terahertz waveband has very important application value in multiple fields of military equipment, scientific research, national economy and the like. Vacuum electronics is used as an important technology tool to develop high power electromagnetic radiation sources in these wavebands. Traveling wave tubes and return wave tubes are two widely used high power radiation sources. With the continuous improvement of the working frequency band, the slow wave structure serving as a core component of a device meets two key scientific and technical problems of large transmission loss and strong reflection.
At present, slow-wave structures researched in terahertz waveband traveling-wave tubes mainly have structures such as folded waveguides and rectangular staggered double gates. Due to the fact that the working wavelength of the terahertz waveband is short, and the structure size of the slow wave structure is small, machining difficulty is high, and machining precision is low. Although the conventional sine waveguide high-frequency system has very small reflection and very low transmission loss, the electric field intensity of the structure in the transmission direction of electromagnetic waves is relatively weak, so that the coupling impedance is small, and the output power, the interaction efficiency and the saturation interaction length of the sine waveguide traveling wave tube are low.
Disclosure of Invention
The invention provides a sine-shaped slotted staggered sine waveguide, which solves the problem of small coupling resistance of the existing sine waveguide slow wave structure and has better dispersion characteristic.
The invention is realized by the following technical scheme:
a sine-shaped slotted staggered sine waveguide comprises a sine grid, wherein the sine grid consists of a plurality of sub-sine grids which are arranged periodically, each sub-sine grid comprises an upper sub-sine grid and a lower sub-sine grid which are arranged oppositely, the phase difference between the upper sub-sine grid and the lower sub-sine grid of each sub-sine grid is zero, the length of the wide side of each sub-sine grid is a1, the distance between the wave crest of each upper sub-sine grid and the wave trough of each lower sub-sine grid is b1, the height of the periodic band fluctuation of a sine line is h, the period length of the periodic band fluctuation of the sine line is p, the wave crests of the upper sub-sine grids and the wave crests of the lower sub-sine grids penetrate through the periodic direction to form sine-shaped slots, the lower sub-sine grids are moved upwards or lowered, so that the wave crests of the upper sub-sine grids and the wave crests of the lower sub-sine grids are arranged in a staggered manner perpendicular to the periodic direction, and a plurality of the slots are staggered to form an electron beam channel.
Preferably, the distance between the wave crest of the upper sub-sine grid and the wave trough of the lower sub-sine grid after the lower sub-sine grid is moved upwards or downwards is b 2.
Preferably, the electron beam channel is arranged in the center of the sine grid and penetrates through the sine grid.
Preferably, the two sinusoids are 180 ° out of phase.
Preferably, the width of the cross section sinusoidal curve of the electron beam channel is consistent with the length of the wide side of the sub-sinusoidal grid.
For optimization, the difference between the lowest point and the highest point of an upper sinusoidal curve or a lower sinusoidal curve of the cross section of the electron beam channel is hx, and the maximum value of the distance between the upper sinusoidal curve and the lower sinusoidal curve of the cross section of the electron beam channel is as follows: 2 × hx- (h-b2), and 2 × hx- (h-b2) ═ b 1-h.
Preferably, the electron beam channel is a vacuum channel.
Preferably, the electromagnetic wave is a terahertz wave.
Preferably, the sinusoidal grating is made of metal copper.
Preferably, the surface roughness of the metal copper is 1 μm.
Compared with the prior art, the invention has the following advantages and beneficial effects:
the invention is based on the slow wave structure of the conventional sine wave guide, reduce the distance b1 between the wave crest of the upper sub sine grid and the wave trough of the lower sub sine grid of the original conventional sine wave guide, make the upper and lower two sine lines of the original conventional sine wave guide stagger, abandon the original natural electron beam channel, change to establish the electron beam channel with the cross section boundary of the sine line stagger of the upper and lower two half cycles along the cycle direction, through the sine-shaped slotted staggered sine wave guide of the invention has higher coupling resistance value, and the dispersion characteristic is improved, namely the interaction ability of the electron beam and the electromagnetic wave is increased, and then the output power, gain and interaction efficiency of the traveling wave tube are improved.
Drawings
In order to more clearly illustrate the technical solutions of the exemplary embodiments of the present invention, the drawings that are required to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and that for those skilled in the art, other related drawings can be obtained from these drawings without inventive effort. In the drawings:
FIG. 1 is a schematic structural diagram of a vacuum model of an original conventional sine waveguide;
FIG. 2 is a grid schematic of a sinusoidal slotted staggered sinusoidal waveguide according to the present invention;
FIG. 3 is a schematic structural view of a vacuum model of a sinusoidal slotted staggered sinusoidal waveguide according to the present invention;
FIG. 4 is a graph comparing dispersion curves of a sinusoidal slotted staggered sinusoidal waveguide and a conventional sinusoidal waveguide slow-wave structure according to the present invention;
FIG. 5 is a graph showing the coupling impedance comparison of a sinusoidal slotted staggered sinusoidal waveguide according to the present invention and a conventional sinusoidal waveguide slow wave structure.
Reference numbers and corresponding part names in the drawings:
100-sub sine grid, 110-upper sub sine grid, and 120-lower sub sine grid.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail below with reference to examples and accompanying drawings, and the exemplary embodiments and descriptions thereof are only used for explaining the present invention and are not meant to limit the present invention.
Examples
A sine-shaped slotted staggered sine waveguide comprises a sine waveguide, wherein the sine waveguide is composed of a plurality of sub sine grids 100 which are arranged periodically, each sub sine grid 100 comprises an upper sub sine grid 110 and a lower sub sine grid 120 which are arranged oppositely, the phase difference between the upper sub sine grid 110 and the lower sub sine grid 120 is zero, the length of the wide side of each sub sine grid 1 is a1, the distance between the wave crest of each sub sine grid and the wave trough of the lower sub sine grid is b1, a1 and b1 are the sizes of a conventional sine waveguide, the height of a sine line periodic band-shaped fluctuation is h, the period length of the sine line periodic band-shaped fluctuation is p, the wave crest of each sub sine grid penetrates through the upper sub sine grid and the wave crest of the lower sub sine grid along the period direction to form a sine-shaped slot, the lower sub sine grid is moved upwards or the sine grid is lowered, so that the wave crest of the upper sub sine grid and the wave crest of the lower sub sine grid are arranged in a staggered mode perpendicular to the period direction, and a plurality of the slots are staggered to form an electron beam channel. It should be noted that the peak of the upper sub-sine grid refers to the lowest end of the downward protrusion of the upper sub-sine grid, and the peak of the lower sub-sine grid refers to the highest end of the upward protrusion of the lower sub-sine grid.
In this embodiment, a distance between a peak of the upper sub-sine wave grid and a trough of the lower sub-sine wave grid after the lower sub-sine wave grid is moved up or down is b 2.
In this embodiment, the electron beam channel is disposed at the center of the sine grid and penetrates through the sine grid.
In this embodiment, the phase difference between the two sinusoids is 180 °.
In this embodiment, the width of the cross-sectional sinusoidal curve of the electron beam channel is consistent with the length of the wide side of the sub-sinusoidal grid.
In this embodiment, the difference between the lowest point and the highest point of the upper sinusoidal curve or the lower sinusoidal curve of the cross section of the electron beam channel is hx, and the maximum value of the distance between the upper sinusoidal curve and the lower sinusoidal curve of the cross section of the electron beam channel is: 2 × hx- (h-b2), and 2 × hx- (h-b2) ═ b 1-h.
In this embodiment, the electron beam channel is a vacuum channel.
In this embodiment, the electromagnetic wave is a terahertz wave.
In this embodiment, the material of the sinusoidal grid is copper.
In this embodiment, the surface roughness of the metal copper is 1 μm.
As shown in fig. 1, a is a conventional sine waveguide slow wave structure, a1 is the length of the waveguide broadside, b1 is the distance between the wave crest of the upper sub-sine grid and the wave trough of the lower sub-sine grid; h is the height of the sinusoidal periodic band and p is the period length of the structure. a 1-0.77, b 1-0.58, h-0.43, p-0.46, and electron beam channel height 0.15.
2-3, a2 is the length of the wide side of the waveguide, b2 is the distance between the wave trough of the upper sub-sine grid and the wave trough of the lower sub-sine grid; h is the height of the sinusoidal periodic band and p is the period length of the structure. The distance b1 between the wave crest of the original upper sub-sine grid and the wave trough of the lower sub-sine grid is reduced, so that the upper and lower sine lines of the waveguide are staggered, an electron beam channel with the cross section being the staggered sine lines of the upper and lower half cycles is established in the center of the waveguide along the cycle direction, the difference from the lowest point to the highest point of the upper sine curve or the lower sine curve of the cross section of the electron beam channel is hx, and the maximum value of the distance between the upper and lower sine curves of the cross section of the electron beam channel is as follows: 2 × hx- (h-b2), and 2 × hx- (h-b2) ═ b1-h, width a2, (unit: mm).
a 2-0.88, b 2-0.33, h-0.43, p-0.46, hx-0.125, and electron beam channel height 0.15.
A strip electron beam channel is arranged between an upper sine periodic strip fluctuation and a lower sine periodic strip fluctuation of the conventional sine waveguide, and the upper sine line and the lower sine line are staggered by reducing b1, so that the strip electron beam channel does not exist between the upper sine periodic strip fluctuation and the lower sine periodic strip fluctuation. The staggering is specifically that the top of the lower sinusoidal periodic band undulation is above the bottom of the upper sinusoidal periodic band undulation, and the distance that is raised is the staggering distance 2 x hx- (h-b 2).
The conventional sine waveguide and the sine waveguide are respectively calculated by using three-dimensional electromagnetic simulation software HFSS, so that the dispersion characteristics and the coupling impedance of the conventional sine waveguide and the conventional sine waveguide are obtained, and the results are compared, and are shown in fig. 4 and 5. FIG. 4 is a comparison of dispersion characteristics of the slow wave structure of the present invention and a conventional sine waveguide, and FIG. 5 is a comparison of coupling impedance curves of the slow wave structure of the present invention and a conventional sine waveguide.
As can be seen from FIG. 4, the normalized phase velocity of the present invention is substantially the same as that of the conventional sine waveguide slow-wave structure in a relatively wide frequency band (194GHz-250GHz), while the dispersion curve of the present invention is more gradual in a high frequency band higher than 250GHz, has a wider frequency band, and shows better dispersion characteristics.
As can be seen from FIG. 5, the present invention has higher coupling impedance than the conventional sinusoidal waveguide slow wave structure in a relatively wide frequency band (190-240 GHz). Meanwhile, the combination of fig. 4 shows that the invention has good improvement in coupling impedance under the condition of keeping consistent dispersion characteristics with the conventional sine waveguide slow wave structure. Compared with the conventional sine waveguide slow wave structure, the invention has stronger interaction capability between the electron beam and the electromagnetic wave in a required frequency band, and further improves the output power, the gain and the interaction efficiency of the traveling wave tube.
The above-mentioned embodiments are intended to illustrate the objects, technical solutions and advantages of the present invention in further detail, and it should be understood that the above-mentioned embodiments are merely exemplary embodiments of the present invention, and are not intended to limit the scope of the present invention, and any modifications, equivalent substitutions, improvements and the like made within the spirit and principle of the present invention should be included in the scope of the present invention.

Claims (10)

1. A sine-shaped slotted staggered sine waveguide comprises a sine grid, wherein the sine grid consists of a plurality of sub-sine grids which are arranged periodically, each sub-sine grid comprises an upper sub-sine grid and a lower sub-sine grid which are arranged oppositely, the phase difference between the upper sub-sine grid and the lower sub-sine grid is zero, the length of the wide side of each sub-sine grid is a1, the distance between the wave crest of each upper sub-sine grid and the wave trough of each lower sub-sine grid is b1, the height of the periodic band-shaped fluctuation of a sine line is h, and the period length of the periodic band-shaped fluctuation of the sine line is p, and the sine-shaped slotted staggered sine waveguide is characterized in that the wave crests of the upper sub-sine grids and the wave crests of the lower sub-sine grids are penetrated in the period direction to form sine-shaped slots, then the lower sub-sine grids are moved upwards or downwards to enable the upper sub-sine grids to be arranged in a mode perpendicular to the period direction, and a plurality of the slots are staggered to form an electron beam channel.
2. The sinusoidal waveguide of claim 1, wherein the distance between the peak of the upper sub-sine wave grating and the trough of the lower sub-sine wave grating after shifting up or down the lower sub-sine wave grating is b 2.
3. A sinusoidal waveguide with sinusoidal slots staggered according to claim 2, wherein said electron beam channel is disposed in the center of and through said sinusoidal grid.
4. A sinusoidal slotted staggered sinusoidal waveguide according to claim 2, wherein said two sinusoids are 180 ° out of phase.
5. A sinusoidal waveguide with sinusoidal slots staggered according to claim 2, wherein the width of the cross-sectional sinusoid of the electron beam channel coincides with the broadside length of the sub-sinusoidal grids.
6. A sinusoidal waveguide with sinusoidal slots staggered according to claim 2, wherein the difference between the lowest point and the highest point of the upper or lower sinusoids of the cross section of the electron beam channel is hx, and the maximum value of the distance between the upper and lower sinusoids of the cross section of the electron beam channel is: 2 × hx- (h-b2), and 2 × hx- (h-b2) ═ b 1-h.
7. A sinusoidal slotted staggered sinusoidal waveguide according to claim 1, wherein said electron beam channels are vacuum channels.
8. The sinusoidal waveguide of claim 1, wherein the electromagnetic wave is a terahertz wave.
9. The sinusoidal waveguide of claim 1, wherein the sinusoidal grating is made of copper.
10. A sinusoidal waveguide with sinusoidal slotting staggered according to claim 9 wherein the metallic copper surface roughness is 1 μm.
CN202111474401.7A 2021-12-03 2021-12-03 Sine-shaped slotted staggered sine waveguide Pending CN114121575A (en)

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Citations (5)

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US20150119972A1 (en) * 2012-04-26 2015-04-30 Tryton Medical, Inc. Support for treating vascular bifurcations
US20160174420A1 (en) * 2013-03-15 2016-06-16 Paul Douglas Cochrane Formed channels providing electromagnetic shielding in electronics
CN105869971A (en) * 2016-05-23 2016-08-17 电子科技大学 Flap-topped sine waveguide slow wave structure
CN110706992A (en) * 2019-10-22 2020-01-17 电子科技大学 Double-electron-beam-channel sine waveguide slow wave structure
CN113113279A (en) * 2021-04-15 2021-07-13 电子科技大学 Cosine grid loading sine-like waveguide slow wave structure

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150119972A1 (en) * 2012-04-26 2015-04-30 Tryton Medical, Inc. Support for treating vascular bifurcations
US20160174420A1 (en) * 2013-03-15 2016-06-16 Paul Douglas Cochrane Formed channels providing electromagnetic shielding in electronics
CN105869971A (en) * 2016-05-23 2016-08-17 电子科技大学 Flap-topped sine waveguide slow wave structure
CN110706992A (en) * 2019-10-22 2020-01-17 电子科技大学 Double-electron-beam-channel sine waveguide slow wave structure
CN113113279A (en) * 2021-04-15 2021-07-13 电子科技大学 Cosine grid loading sine-like waveguide slow wave structure

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
韩天成: "皱纹波导和皱纹槽波导的慢波特性分析", 《中国优秀硕士学位论文全文数据库(电子期刊)》, no. 12, 31 December 2008 (2008-12-31), pages 136 - 1 *

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