CN114121466A - Production and manufacturing method of magnetic thin film inductor - Google Patents
Production and manufacturing method of magnetic thin film inductor Download PDFInfo
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- CN114121466A CN114121466A CN202111183284.9A CN202111183284A CN114121466A CN 114121466 A CN114121466 A CN 114121466A CN 202111183284 A CN202111183284 A CN 202111183284A CN 114121466 A CN114121466 A CN 114121466A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 34
- 239000010409 thin film Substances 0.000 title claims abstract description 30
- 239000000758 substrate Substances 0.000 claims abstract description 72
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 67
- 230000003647 oxidation Effects 0.000 claims abstract description 56
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 56
- 229910052802 copper Inorganic materials 0.000 claims abstract description 55
- 239000010949 copper Substances 0.000 claims abstract description 55
- 238000002955 isolation Methods 0.000 claims abstract description 46
- 239000010408 film Substances 0.000 claims abstract description 34
- 229910052751 metal Inorganic materials 0.000 claims abstract description 30
- 239000002184 metal Substances 0.000 claims abstract description 30
- 238000000034 method Methods 0.000 claims abstract description 22
- 239000002994 raw material Substances 0.000 claims abstract description 5
- 238000011049 filling Methods 0.000 claims abstract description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 40
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 22
- 238000009713 electroplating Methods 0.000 claims description 22
- 239000001301 oxygen Substances 0.000 claims description 22
- 229910052760 oxygen Inorganic materials 0.000 claims description 22
- 235000012239 silicon dioxide Nutrition 0.000 claims description 20
- 239000000377 silicon dioxide Substances 0.000 claims description 20
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid Substances OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 19
- 239000010936 titanium Substances 0.000 claims description 19
- 229910052719 titanium Inorganic materials 0.000 claims description 19
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 17
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 11
- 229910052710 silicon Inorganic materials 0.000 claims description 11
- 239000010703 silicon Substances 0.000 claims description 11
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 8
- 239000003292 glue Substances 0.000 claims description 5
- 238000009835 boiling Methods 0.000 claims description 4
- 230000001590 oxidative effect Effects 0.000 claims description 4
- 238000004070 electrodeposition Methods 0.000 claims description 3
- 239000002105 nanoparticle Substances 0.000 claims description 3
- 238000001259 photo etching Methods 0.000 claims description 3
- 238000002791 soaking Methods 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 155
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 17
- 239000000243 solution Substances 0.000 description 13
- 229910052786 argon Inorganic materials 0.000 description 8
- 229920002120 photoresistant polymer Polymers 0.000 description 7
- 238000007747 plating Methods 0.000 description 7
- 150000002500 ions Chemical class 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 238000001755 magnetron sputter deposition Methods 0.000 description 4
- 239000013077 target material Substances 0.000 description 4
- 238000004804 winding Methods 0.000 description 4
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 3
- 229910001431 copper ion Inorganic materials 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 241000252506 Characiformes Species 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000000306 component Substances 0.000 description 2
- 229910000365 copper sulfate Inorganic materials 0.000 description 2
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000005674 electromagnetic induction Effects 0.000 description 2
- 238000004146 energy storage Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 230000005415 magnetization Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910021645 metal ion Inorganic materials 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
- 239000005751 Copper oxide Substances 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000000861 blow drying Methods 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001879 copper Chemical class 0.000 description 1
- 229910000431 copper oxide Inorganic materials 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000012217 deletion Methods 0.000 description 1
- 230000037430 deletion Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000002500 effect on skin Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/02—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets
- H01F41/0206—Manufacturing of magnetic cores by mechanical means
- H01F41/0233—Manufacturing of magnetic circuits made from sheets
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/02—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets
- H01F41/04—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets for manufacturing coils
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Coils Or Transformers For Communication (AREA)
- Semiconductor Integrated Circuits (AREA)
- Manufacturing Cores, Coils, And Magnets (AREA)
Abstract
The application relates to a production and manufacturing method of a magnetic thin film inductor, which comprises the following steps: s1, selecting a substrate raw material and preparing a substrate; s2, preparing a lower layer lead and a lower oxidation isolation layer on the substrate in sequence from inside to outside; s3, preparing a magnetic film layer on the side of the lower oxidation isolation layer, which is far away from the substrate; s4, preparing an upper oxidation isolation layer and an upper layer lead on the magnetic film layer, wherein the method also comprises preparing a through hole for communicating the upper layer lead and the lower layer lead, and filling a copper lead in the through hole. In the method, a substrate is prepared, a lower layer lead, a lower oxidation isolation layer, a magnetic film layer, an upper oxidation isolation layer and an upper layer lead are sequentially prepared from bottom to top on the basis of the substrate, the upper layer lead is connected with the lower layer lead through a through hole, and a layered film structure is adopted, so that the size of the inductor is reduced; the upper layer wire and the lower layer wire are connected by metal copper in the through hole, so that the induced current directions generated by the upper layer wire and the lower layer wire are kept consistent, the inductance value is improved, and the performance of the inductor is effectively improved.
Description
Technical Field
The application relates to the technical field of inductor manufacturing, in particular to a production and manufacturing method of a magnetic thin film inductor.
Background
With the development of scientific technology, the size of a processor can be reduced significantly in the integrated circuit manufacturing process, but some core components such as an integrated inductor, a noise suppressor and the like have difficulties in high frequency, miniaturization, integration and the like. Therefore, a soft magnetic thin film material having a high magnetization, a high magnetic permeability, a high resonance frequency, and a high electrical resistivity is attracting increasing attention.
The inductor is an important passive device for realizing the functions of filtering, tuning, amplifying, impedance coupling and the like. At present, electronic components such as resistors and capacitors are integrated, and only magnetic devices including inductors are not completely integrated. With the development of miniaturization and integration of radio frequency circuits, a system on chip (SoC) becomes the mainstream of radio frequency devices, which requires that inductors have to be optimized continuously for their own performance, reduce the volume and reduce the cost, can be well matched with the circuits, and most importantly, can be compatible with semiconductor processes.
Thin film inductors are classified into two categories according to the coil structure: a planar coil type and a three-dimensional solenoid winding type. The inductor with the planar coil structure is an inductor with a spiral coil structure, and the structure is relatively simple; but the inductance is low because the magnetic circuit cannot be closed. The three-dimensional solenoid winding type inductor is a three-dimensional structure inductor and is formed by vertically winding a coil and a magnetic film, and because a magnetic circuit is parallel to a substrate, the eddy current loss can be reduced, but the three-dimensional solenoid winding type inductor also has the problems of unclosed magnetic circuit, low inductance value and the like.
With respect to the related art in the above, the inventors found that the performance of the related inductor is general.
Disclosure of Invention
In order to improve the performance of the inductor, the application provides a production and manufacturing method of a magnetic thin film inductor.
The production and manufacturing method of the magnetic thin film inductor adopts the following technical scheme:
a production and manufacturing method of a magnetic thin film inductor comprises the following steps:
s1, selecting a substrate raw material and preparing a substrate;
s2, preparing a lower layer lead and a lower oxidation isolation layer on the substrate in sequence from inside to outside;
s3, preparing a magnetic film layer on the side of the lower oxidation isolation layer, which is far away from the substrate;
s4, preparing an upper oxidation isolation layer and an upper layer lead on the side of the magnetic film layer departing from the substrate, wherein the method also comprises preparing a through hole for communicating the upper layer lead and the lower layer lead, and the through hole is filled with a copper lead.
By adopting the technical scheme, the step S1 is used for manufacturing the substrate containing the substrate, the step S2 plates the lower-layer lead at the vertical upper end of the substrate, then the lower oxidation isolation layer is plated at the vertical upper end of the lower-layer lead, the step S3 plates the magnetic film layer at the vertical upper end of the lower oxidation isolation layer, the step S4 plates the oxidation isolation layer at the vertical upper end of the magnetic film layer, then the through hole is prepared, the upper-layer lead is plated at the upper end of the upper oxidation isolation layer, and the metal copper filled in the through hole is used for communicating the lower-layer lead with the upper-layer lead. In the method, a substrate is prepared, a lower layer wire, a lower oxidation isolation layer, a magnetic film layer, an upper oxidation isolation layer and an upper layer wire are prepared in sequence from bottom to top on the basis of the substrate, and the upper layer wire is connected with the lower layer wire through a through hole; and after the through-hole is filled with copper wires, the upper layer wires are connected with the lower layer wires, after the through-hole is electrified, the current of the upper layer wires and the current of the lower layer wires are in the same direction, and induced current generated on the upper layer wires and the lower layer wires are in the same direction, so that the inductance value is effectively improved, and the performance of the magnetic film inductor is further improved.
Preferably, the step S1 includes the step S11 of selecting an N-type silicon wafer as a substrate, and boiling the N-type silicon wafer for 20 to 25 minutes by concentrated sulfuric acid and hydrogen peroxide at the temperature of 120 ℃ and 130 ℃; and S12, introducing oxygen, and oxidizing the substrate to obtain a substrate.
By adopting the technical scheme, in the step S11, the N-type silicon wafer is firstly placed into concentrated sulfuric acid and hydrogen peroxide for boiling, cleaning and impurity removal are carried out, and in the step S12, silicon is oxidized to obtain silicon dioxide which is an insulating layer and is used as a substrate.
Preferably, in step S12, the method for oxidizing the substrate by oxygen comprises: and introducing dry oxygen, wet oxygen and dry oxygen in sequence towards the substrate.
By adopting the technical scheme, dry oxygen is adopted in the front and the back to ensure the quality of an oxidation layer, and wet oxygen is adopted in the middle to improve the oxidation rate, so that the contradiction between the oxidation quality and the oxidation rate is solved.
Preferably, the step S2 includes a step S21 of applying glue and photolithography to the substrate to form the lower layer conductive trace on the substrate; s22, electrodepositing metallic titanium and copper, and soaking the substrate plated with the metal in acetone for 5-8 minutes; s23, electroplating copper to prepare a copper wire, wherein the copper wire is used as a lower layer wire; and S24, adhering a lower oxidation isolation layer on the lower layer of wire.
By adopting the technical scheme, the step S21 is used for preparing a die of metal titanium and copper, the equal size of the space of the lower layer of conducting wires is in accordance with the design standard, the step S22 is used for sputtering metal titanium and metal copper to the lower conducting wire pattern, the metal titanium has the function of increasing the adhesion between the metal copper and the substrate, and the metal copper is used as a seed in electroplating; the metal copper has low resistivity, is convenient for reduce the transmission loss of passive device, and then improves the quality factor value of inductor, and the quality factor value has decided the energy storage and the conversion efficiency of inductance, and lower oxidation isolation layer is used for keeping apart lower floor's wire, and the non-metallic property of lower oxidation isolation layer can separate the contact between most of metal ion, and electronic motion receives the resistance increase to the realization is to the isolation of lower floor's wire.
Preferably, in step S22, the thickness of the titanium metal is smaller than that of the copper metal during the electrodeposition.
By adopting the technical scheme, the thickness of the metal titanium is smaller than that of the metal copper, so that the contact area between the copper seed layer and the electroplating solution is large during electroplating, and copper ions in the electroplating solution can be conveniently separated out on the copper seed layer after getting electrons.
Preferably, in the step S2, the lower oxidation isolation layer is a silicon dioxide dielectric layer, in the step S4, the upper oxidation isolation layer is also a silicon dioxide dielectric layer, and the thickness of the lower oxidation isolation layer is equal to that of the upper oxidation isolation layer.
By adopting the technical scheme, the nonmetal performance of the silicon dioxide can separate most of metal ions from each other, so that the current is isolated and is only transmitted along the lower layer wire or the upper layer wire. The upper and lower oxide isolation layers separate the upper and lower conductor lines, and the upper and lower oxide isolation layers are equal in thickness, which facilitates further suppression of the skin effect of current transmission.
Preferably, in step S3, the magnetic film layer is FeCo-Si
A nanoparticle film layer.
By adopting the technical scheme, FeCo-Si
The nano-particle film has high resistivity, is convenient for reducing eddy current loss and has higher magnetization intensity.
Preferably, in step S23, before the copper electroplating, the base substrate is soaked in dilute sulfuric acid.
By adopting the technical scheme, the copper is easily oxidized in the air, and the oxide formed by oxidation is attached to the surface of the copper seed layer, so that copper ions in the electroplating solution are not easily contacted with the copper in the copper seed layer after getting electrons during electroplating operation, and the electroplating operation is further influenced.
In summary, the present application includes at least one of the following beneficial technical effects: in the method, a substrate is prepared, a lower layer lead, a lower oxidation isolation layer, a magnetic film layer, an upper oxidation isolation layer and an upper layer lead are sequentially prepared from bottom to top on the basis of the substrate, the upper layer lead is connected with the lower layer lead through a through hole, and a layered film structure is adopted, so that the size of the inductor is reduced; and the upper layer wire and the lower layer wire are connected by the metal copper in the through hole, so that the current directions in the upper layer wire and the lower layer wire are kept consistent, the induced current directions generated by the upper layer wire and the lower layer wire are kept consistent, the inductance value is improved, and the performance of the inductor is effectively improved.
Drawings
Fig. 1 is a flowchart of a method for manufacturing a magnetic thin film inductor according to an embodiment of the present disclosure.
Fig. 2 is a flowchart illustrating detailed steps of an embodiment of the present application.
Fig. 3 is a cross-sectional view of a magnetic thin film inductor in an embodiment of the present application.
Fig. 4 is a top view of a magnetic thin film inductor in an embodiment of the present application.
Description of reference numerals: 1. a substrate; 11. a base substrate; 2. a lower layer wire; 3. a lower oxidation isolation layer; 4. a magnetic film layer; 5. an upper oxidation isolation layer; 6. an upper layer of conductive lines; 7. and a through hole.
Detailed Description
The present application is described in further detail below with reference to figures 1-4.
The embodiment of the application discloses a production and manufacturing method of a magnetic thin film inductor. Referring to fig. 1 and 2, the method for manufacturing the magnetic thin film inductor mainly comprises four major steps: step S1, selecting raw materials and preparing a base substrate 11; step S2, preparing a lower layer wire 2 and a lower oxide isolation layer 3 on the vertical upper end of the base substrate 11; step S3, preparing a magnetic film layer 4 on the vertical upper end of the oxidation isolation layer 3; step S4, preparing an upper oxidation isolation layer 5 and an upper layer lead 6 on the vertical upper end of the magnetic film layer 4, wherein, the method also comprises the steps of photoetching and opening a through hole 7 for communicating the upper layer lead 6 and the lower layer lead 2, and filling a copper lead in the through hole 7.
Referring to fig. 2 and 3, in the manufacturing process of the magnetic thin film inductor, a substrate 11 is prepared, a lower layer wire 2, a lower oxidation isolation layer 3, a magnetic film layer 4, an upper oxidation isolation layer 5 and an upper layer wire 6 are prepared in sequence from bottom to top on the basis of the substrate 11, and the upper layer wire 6 is connected with the lower layer wire 2 through a through hole 7. The magnetic thin film inductor in the application adopts a layered film structure, compared with a mainstream three-dimensional solenoid wound inductor, the thickness of each layer of film can be controlled according to requirements, the minimum thickness of the three-dimensional solenoid wound inductor is the diameter of a solenoid, namely the thickness of the three-dimensional solenoid wound inductor is fixed, and the magnetic thin film inductor in the application can reduce the space volume of the magnetic thin film inductor by properly reducing the thickness of each layer of film structure; and after the through-hole 7 is filled with copper wires, the upper layer wire 6 is connected with the lower layer wire 2, after the power is switched on, the current of the upper layer wire 6 and the current of the lower layer wire 2 are in the same direction, and induced currents generated on the upper layer wire 6 and the lower layer wire 2 are in the same direction, so that the inductance value is effectively improved, and the performance of the magnetic film inductor is further improved.
Referring to fig. 2 and 3, the step S1 of selecting raw materials and preparing the base substrate 11 is divided into two small steps: and step S11, selecting an N-type silicon wafer as a substrate 1, and boiling the N-type silicon wafer for 22 minutes at 125 ℃ by using concentrated sulfuric acid and hydrogen peroxide. Concentrated sulfuric acid and hydrogen peroxide are prepared into a piranha solution, and the N-type silicon wafer is put into the piranha solution to be boiled for a period of time, so that impurities on the N-type silicon wafer can be removed conveniently. In step S12, oxidation is performed by introducing dry oxygen for 25 minutes, wet oxygen for 50 minutes, and dry oxygen for 25 minutes in this order.
The introduction of dry oxygen and wet oxygen is carried out on the N-type silicon wafer, and because the oxidation rate of the dry oxygen is low but the quality of the oxidation layer is good, and the oxidation rate of the wet oxygen is high but the quality of the oxidation layer is poor, the steps of dry oxygen-wet oxygen-dry oxygen are adopted, so that the contradiction between the oxidation quality and the oxidation rate is conveniently solved. Dry oxygen is used before and after the oxidation layer, so that the quality of the oxidation layer is ensured, and wet oxygen is used in the middle to improve the oxidation rate, so that the oxidation is carried out on the surface layer of the N-type silicon to obtain a silicon dioxide layer, and the silicon dioxide layer is used as the substrate 11.
Referring to fig. 2 and 3, the step S2 of preparing the lower conductive line 2 and the lower oxide isolation layer 3 is divided into two small steps: step S21, glue is applied and photo-etched to form the pattern of the lower layer conductor 2. In the embodiment of the present application, the adopted photoresist is AZ5214, and the flow of manufacturing the lower layer conductive line 2 pattern by gluing and photolithography is as follows:
(1) cleaning the substrate 11 with acetone and alcohol, followed by blow-drying with nitrogen;
(2) coating AZ5214 photoresist on a substrate 11 in a rotating manner at a rotating speed of 3000r/min for 30 seconds in a spinning manner to ensure the uniformity of a glue film;
(3) baking the substrate 11 on a hot plate at 100 ℃ for 1 minute to fully volatilize the organic solvent in the photoresist, and performing first exposure on the substrate 11 by using an ultraviolet exposure machine after baking is finished; the photoresist AZ5214 irradiated by the ultraviolet exposure machine is modified, and the area covered by the modified part is the shape of the lower layer wire 2;
(4) placing the substrate 11 subjected to the first exposure on a hot plate for turning and baking, wherein the baking temperature is 120 ℃ and the baking time is 100 seconds;
(5) carrying out overturning exposure on the substrate 11 for 45 seconds;
(6) and developing by using positive photoresist for 40 seconds to dissolve the modified photoresist AZ5214, and exposing the pattern for plating the lower layer wire 2 in the process (3) on the substrate 11.
Referring to fig. 2 and 3, in step S22, metal titanium and metal copper are electrodeposited on the substrate 11, the substrate 1 plated with metal titanium and metal copper is placed in acetone, after five minutes of soaking, the AZ5214 photoresist of the non-modified part is cut off, and a titanium bonding layer and a copper seed layer are sequentially obtained on the substrate 11 from inside to outside.
Referring to fig. 2 and 3, copper is electroplated and new copper forms a copper wire on the copper seed layer, the copper wire serving as the lower wire 2, step S23. In the embodiment of the application, since the copper metal has a low resistivity, which is convenient for reducing the transmission loss of the passive device, and further improves the quality factor value of the inductor (the quality factor value determines the energy storage and conversion efficiency of the inductor), and the copper metal is economical and has a high cost performance, the copper metal is selected as the material of the conducting wire. The above-described flow of manufacturing the lower layer wire 2 is as follows:
(1) sequentially plating metal titanium and metal copper on the substrate 11 from inside to outside by an electrodeposition method, wherein the thickness of the metal titanium is smaller than that of the metal copper, the titanium plating is used for increasing the adhesion between the copper and the substrate 11, and the copper layer is used as a seed layer of electroplating, so that a titanium bonding layer and a copper seed layer are obtained on the substrate 11.
(2) A thick paste AZ4620 was used to form a plating mold with a paste thickness of about 5 μm. The thick glue AZ4620 has high stability in the electroplating solution, is not easy to decompose or chemically change in the electroplating solution, thereby reducing the pollution to the electroplating solution.
(3) Since copper is easily oxidized in air, the base substrate is soaked with dilute sulfuric acid for 11 fifteen minutes to remove oxides before electroplating copper, followed by electroplating. The main components of the plating solution are copper sulfate and sulfuric acid, wherein the copper sulfate provides copper ions for electroplating, and the sulfuric acid is used for preventing the copper salt from being hydrolyzed and is convenient for improving the conductive capability of the plating solution. The electroplating temperature is 24 ℃, the current density is 18 milliamperes per square centimeter, the time is 12 minutes, and finally a copper wire with the thickness of 2 micrometers is obtained, wherein the copper wire is the lower layer wire 2.
Referring to fig. 2 and 3, after the plating is completed, the seed layer needs to be etched away. In the embodiment of the application, the etching of the copper seed layer selects a mixed solution of sulfuric acid and hydrogen peroxide, the hydrogen peroxide firstly oxidizes copper, and then the sulfuric acid dissolves the copper oxide; since the copper wire is simultaneously exposed to the corrosive liquid, the wire is plated thicker during electroplating. And for the titanium seed layer, hydrofluoric acid solution is used, and the etching time is controlled at the same time, so that the hydrofluoric acid is prevented from corroding the silicon dioxide below the lower layer wire 2.
Referring to fig. 2 and 3, in step S24, an oxide isolation layer 3 is bonded over the copper wire. Specifically, a silicon dioxide dielectric layer with a thickness of 500 nm is disposed on the copper wire, and the silicon dioxide dielectric layer is the lower oxidation isolation layer 3.
Referring to fig. 2 and 3, step S3, a magnetic film layer 4 is prepared. In the embodiment of the application, the magnetic film layer is prepared by adopting a magnetron sputtering method, namely, the magnetic film layer with the purity of 99 percent is selected
The alloy is used as a target material and has high purity
A certain number of silicon dioxide small pieces are placed on the surface of the alloy, the silicon dioxide small pieces are symmetrically placed at the position of an etching track of the target material, and sputtering is carried out in a pure argon environment. Argon is a simple gas composed of monoatomic molecules, and argon is a rare gas and has the largest content in air, and is suitable for ionization.
In a magnetron sputtering apparatus, electrons are directed towards the substrate due to the action of an electric field1, the argon atoms are ionized to generate argon positive ions, the argon positive ions are accelerated in an electric field of the magnetron sputtering instrument, and the argon positive ions change directions in a magnetic field of the magnetron sputtering instrument. After being accelerated and turned, the argon positive ions finally collide with the silicon dioxide small pieces on the target material, partial momentum is transferred to silicon dioxide molecules by the argon positive ions, the silicon dioxide molecules collide with other silicon dioxide molecules to form a cascade process, and the silicon dioxide molecules enter the target material after being sputtered
And alloying to obtain a magnetic film layer 4 having a thickness of 500 nm.
Step S4 is divided into step S41, a silicon dioxide dielectric layer with the thickness of 500 nanometers is bonded on the magnetic film layer 4, the silicon dioxide dielectric layer is the upper oxidation isolation layer 5, and the preparation process is the same as step S24; step S42, photoetching through holes 7, wherein the through holes 7 are provided with two through holes 7, the two through holes 7 are distributed on the substrate 1 in a diagonal manner, the lower ends of the through holes 7 are connected with the lower-layer lead 2, and the through holes 7 are plated with metal copper; step S43, electrodepositing metallic titanium and metallic copper on the upper oxidation isolation layer 5, wherein the metallic titanium is used as a titanium adhesion layer for electroplating the upper conductor 6, and the metallic copper is used as a copper seed layer of the upper conductor 6; and electroplating an upper layer lead 6 on the copper seed layer to obtain a copper lead with the thickness of 2 microns, wherein the copper lead is the upper layer lead 6, and the preparation process is the same as the steps S22 and S23. The resulting magnetic thin film inductor is shown in fig. 4.
The working principle of the production and manufacturing method of the magnetic thin film inductor in the embodiment of the application is as follows: the magnetic thin film inductor is connected into a circuit, namely one end of a lower layer lead 2 is coupled with an anode, the other end of the lower layer lead 2 is coupled with a cathode, current enters the magnetic thin film inductor along the anode input end of the lower layer lead 2, then the current is shunted, and a part of current is transmitted along the lower layer lead 2; another part of the current is transmitted along the upper layer lead 6 through the copper lead in the through hole, and after the part of the current reaches the tail end of the upper layer lead 6, the part of the current is continuously converged to the lower layer lead 2 along the copper lead in the other through hole, and then the negative pole output end of the lower layer lead 2 is connected into a circuit.
When the current is transmitted by the upper layer wire 6 and the lower layer wire 2, the current transmission directions of the two parts are from one end of the substrate 11 to the other end of the substrate 11, the current directions of the two parts are consistent, the direction of the electromotive force in the electromagnetic induction law can be determined by Lenz law or right-hand rule, namely, the directions of the induced currents generated by the electromagnetic induction phenomenon in the upper layer wire 6 and the lower layer wire 2 are kept consistent, and therefore the inductance performance is improved.
The above examples are only used to illustrate the technical solutions of the present application, and do not limit the scope of the present application. It is to be understood that the embodiments described are only some of the embodiments of the present application and not all of them. Although the present application has been described in detail with reference to the above embodiments, those skilled in the art may still make various combinations, additions, deletions or other modifications of the features of the embodiments of the present application without conflict, and thus, different technical solutions that do not substantially depart from the spirit of the present application may be obtained.
Claims (8)
1. A production method of a magnetic thin film inductor is characterized by comprising the following steps: the method comprises the following steps:
s1, selecting a raw material of a substrate (1) and preparing a substrate (11);
s2, preparing a lower layer lead (2) and a lower oxidation isolation layer (3) on the substrate (11) from inside to outside in sequence;
s3, preparing a magnetic film layer (4) on the side of the lower oxidation isolation layer (3) departing from the substrate (11);
s4, preparing an upper oxidation isolation layer (5) and an upper layer lead (6) on one side of the magnetic film layer (4) departing from the substrate (11), wherein the method further comprises preparing a through hole (7) for communicating the upper layer lead (6) and the lower layer lead (2), and filling copper leads in the through hole (7).
2. The method for manufacturing a magnetic thin film inductor according to claim 1, wherein: the step S1 comprises a step S11 of selecting an N-type silicon wafer as a substrate (1), and boiling the substrate for 20 to 25 minutes by concentrated sulfuric acid and hydrogen peroxide at the temperature of 120 ℃ and 130 ℃; and S12, introducing oxygen, and oxidizing the substrate (1) to obtain a substrate (11).
3. The method for manufacturing a magnetic thin film inductor according to claim 2, wherein: in the step S12, the method for oxidizing the substrate (1) by oxygen comprises: dry oxygen, wet oxygen, and dry oxygen are sequentially introduced toward the substrate (1).
4. The method for manufacturing a magnetic thin film inductor according to claim 1, wherein: the step S2 includes a step S21 of applying glue and photo-etching to the base substrate (11) to form the shape of the lower layer wire (2) on the base substrate (11); s22, electrodepositing metallic titanium and metallic copper, and soaking the substrate (11) plated with the metal in acetone for 5-8 minutes; s23, electroplating copper to prepare a copper wire, wherein the copper wire is used as a lower layer wire (2); and S24, bonding a lower oxidation isolation layer (3) on the lower layer lead (2).
5. The manufacturing method of a magnetic thin film inductor according to claim 4, wherein: in step S22, the thickness of the titanium metal is smaller than the thickness of the copper metal during electrodeposition.
6. The method for manufacturing a magnetic thin film inductor according to claim 1, wherein: in the step S2, the lower oxidation isolation layer (3) is a silicon dioxide dielectric layer, in the step S4, the upper oxidation isolation layer (5) is also a silicon dioxide dielectric layer, and the thickness of the lower oxidation isolation layer (3) is equal to that of the upper oxidation isolation layer (5).
7. The method for manufacturing a magnetic thin film inductor according to claim 1, wherein: in the step S3, the magnetic film layer (4) is FeCo-Si
A nanoparticle film layer.
8. The manufacturing method of a magnetic thin film inductor according to claim 4, wherein: in step S23, before the copper electroplating, the base substrate (11) is soaked in dilute sulfuric acid.
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