CN114114375B - Plasma hot electron measurement system and measurement method - Google Patents
Plasma hot electron measurement system and measurement method Download PDFInfo
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/24—Measuring radiation intensity with semiconductor detectors
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
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- G—PHYSICS
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- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/36—Measuring spectral distribution of X-rays or of nuclear radiation spectrometry
- G01T1/366—Measuring spectral distribution of X-rays or of nuclear radiation spectrometry with semi-conductor detectors
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Abstract
The invention belongs to a plasma hot electron measurement technology, and particularly relates to a plasma hot electron measurement system and a measurement method. The system comprises a data server, an acquisition display, a VME case, a pulse data statistics analysis module, an FPGA counter, a detector signal processing module and a cadmium telluride hot electron detector; the measuring method comprises the steps of measuring plasma hot electrons by using a cadmium telluride hot electron detector, amplifying and anti-stacking signals obtained by the detector, counting and collecting data of hot electron pulses in parallel, separating the hot electron pulses, and obtaining a thermal electron energy spectrum distribution curve in the plasma discharging process. The system and the method realize real-time detection and analysis of electron energy distribution of the hot electron measurement system, and the cadmium telluride device completes measurement of hot electrons, so that measurement accuracy and operation efficiency of the hot electron measurement system are improved.
Description
Technical Field
The invention belongs to a plasma hot electron measurement technology, and particularly relates to a plasma hot electron measurement system and a measurement method.
Background
In the tokamak device discharge experiment, a large amount of hyperthermia electrons are generated in the conventional ohmic discharge, and in addition, a large amount of hyperthermia electrons exist in the auxiliary heating process, particularly in the experiment process of wave heating and low clutter current driving. The energy of the X-ray bremsstrahlung generated by the interaction of the hyperthermostable electrons in the plasma with the electrons and ions in the plasma ranges from tens to hundreds of keV, so that the analysis of plasma parameters can be performed by measuring different energy distributions. In general, by measuring the thermal electron distribution of 20Kev to 160Kev of the plasma by using a detector, the space-time distribution of the X-ray radiation intensity in the plasma radiation under the auxiliary heating condition can be obtained by measuring and analyzing the radiation intensity and the energy spectrum of the medium-energy X-rays, the thermal electron energy deposition range and region of the plasma can be obtained by analyzing the intensity distribution of the X-rays, and parameters such as accessibility of external waves and the position of a cyclotron resonance layer, the velocity distribution of the super-thermal electrons and the space-time variation of the distribution can be obtained. Meanwhile, the measurement distribution of the hot electrons can also be used for researching a series of plasma physical phenomena such as internal rupture of plasma current, large rupture, transportation of hot electrons and super-hot electrons, instability caused by resonance with mode waves, auxiliary heating, electron avalanche escape induction and the like, and is an extremely important diagnosis means of a plasma physical experiment, and a set of diagnosis measurement system capable of well completing measurement tasks needs to be developed for completing measurement of the hot electrons.
Conventional thermionic measurement systems do not measure the thermionic radiant energy distribution in all directions of the plasma well due to the adoption of a method perpendicular to the plasma. In addition, due to the limitation of the acquisition rate, the time resolution, the spatial resolution and the energy resolution cannot be simultaneously combined, so that the space-time resolution of the plasma hot electron measurement is poor, and the energy distribution of the hot electrons cannot be accurately measured. Therefore, a set of more accurate measuring system is designed and developed to solve the defects of small measuring range, low measuring precision, low data processing speed and the like of the traditional system.
Disclosure of Invention
The invention aims to provide a plasma hot electron measurement system and a measurement method, which solve the defects of small measurement range, low measurement precision, low data processing speed and the like of the traditional system.
The technical scheme of the invention is as follows:
a plasma hot electron measurement system comprises a data server, an acquisition display, a VME case, a pulse data statistics analysis module, an FPGA counter, a detector signal processing module and a cadmium telluride hot electron detector;
the cadmium telluride thermionic detector is used for measuring plasma thermions;
the cadmium telluride is adopted to generate pulse signal waves with different intensity voltages according to the radiation intensity so as to realize electron energy detection of hot electrons;
the detector signal processing module is used for amplifying the detector signals and performing anti-accumulation processing on the signals, and meanwhile, a denoising circuit is designed to realize noise suppression;
the FPGA counter realizes data acquisition and pulse counting of the hot electron detector signals;
and the pulse data analysis module is used for analyzing and counting the data to obtain the hot electron distribution condition of the 20Kev-160Kev energy section in real time.
A plasma hot electron measurement method comprises the following steps:
step 2, amplifying and anti-stacking the signals obtained by the detector;
step 3, performing data parallel counting and collection of hot electron pulse;
step 4, separating the hot electron pulse;
and step 5, obtaining a thermal electron energy spectrum distribution curve in the plasma discharge process.
Each cadmium telluride thermionic detector is arranged with a measuring angular orientation differing by 1.9 degrees, respectively.
The step 2 is realized by an amplifying and anti-stacking circuit, and comprises three inverting amplifiers and capacitors and resistors connected with the inverting amplifiers; the inverting input end of the first inverting amplifier is connected with the electron R1, the non-inverting input end of the first inverting amplifier is connected with the resistor R3 and is grounded; a resistor R2 and a capacitor C1 are connected in parallel at the inverting input end and the output end; the inverting input end of the second inverting amplifier is connected with the electronic R6 and grounded, and a resistor R5 and a capacitor C2 are sequentially connected between the non-inverting input end and the output end of the first inverting amplifier; the resistor R7 is connected in parallel with the non-inverting input end and the output end; the resistors R9 and R8 are sequentially connected in series between the inverting input end of the third inverting amplifier and the output end of the second inverting amplifier, and a lead wire between R9 and R8 is connected with the capacitor C3 and grounded; the inverting input end and the output end of the third inverting amplifier are connected with the electronic R11 in parallel, and the non-inverting input end of the third inverting amplifier is connected with the resistor R10 and grounded; the input end of the whole circuit is the current input end of the resistor R1, and the output end is the output end parallel circuit junction end of the third inverting amplifier.
The resistance values of R1 and R2 are adjusted to realize the adjustment of the voltage signal, and the capacitor C1 is used for compensating the phase of the detector signal and suppressing high-frequency noise.
And C2 and R4 are differential circuits, which detect the peak change of the signal in the detector signal, and R4 is smaller than the pulse width of all the detector outputs.
All the inverting amplifiers are connected with the differentiating circuit and the integrating circuit, and the resistance values of R5 and R7 are the same.
The integrating circuit where R8 and C3 are located realizes the restoration and separation of differential signals, and the time constant is consistent with the pulse signal frequency.
And when the standard cadmium telluride module is used for calibrating the level output of the circuit, the resistance values of R9 and R11 are adjusted and calibrated.
The step 3 completes the data acquisition and pulse height counting of 19 hot electron pulses in a parallel counting and acquisition mode of FPGA, and is particularly that
3.1 The voltage amplitude discriminator is adopted to discriminate the level amplitude of the hot electron pulse in real time and generate pulse signals with different levels according to the amplitude signals;
3.2 The real-time counter collects the pulses with different levels and performs the separation treatment of the hot electron pulses.
In the step 4, the voltage amplitude of the hot electron pulse is designed to be 1V, 1.5V, 2V, 2.5V, 3V, 3.5V, 4V, 4.5V, and the separation process of the hot electron pulse is performed according to the voltage amplitude setting.
In the step 5, the thermal electron energy range is defined to be 20Kev-160Kev.
The invention has the following remarkable effects: the functions of real-time detection and real-time analysis of electron energy distribution of the hot electron measurement system are realized, and the measurement of hot electrons is completed by adopting a cadmium telluride device. Meanwhile, the real-time processing of the detector signal is finished through the signal conditioning circuit and screening, and finally, the real-time acquisition and statistical analysis of the pulse signal are realized through the data acquisition system taking the FPGA as a core, the energy distribution diagram of the plasma hot electrons is obtained in real time, and the measurement precision and the operation efficiency of the hot electron measurement system are improved.
The hot electron measurement system comprises a cadmium telluride detector, a data server, an acquisition display, a VME case, a pulse data statistics analysis module, an FPGA counter, a detector signal processing module and the like, and achieves signal pre-amplification, signal driving, high-precision linear amplification and anti-accumulation processing, pulse identification and counting statistics are carried out simultaneously, the detector and the collector are arranged coaxially, and the acquisition device and the data processing system are connected by adopting a bridge card and an optical fiber so as to meet the precision requirement of hot electron measurement.
The thermal electron detector adopts cadmium telluride as a core, and adopts a reasonable pre-amplifying circuit, a differential driving circuit, a linear amplifying circuit and a reverse accumulation circuit to carry out signal processing design of the detector, so that the measurement precision of plasma thermal electrons is further improved.
The data processing system adopts an FPGA counter, takes the FPGA as a core to design, mainly comprises a pulse acquisition card, a VME acquisition case and a data processing computer, and adopts optical fibers to carry out connection communication between the acquisition case and the data processing computer so as to realize the anti-interference connection between the detector and the acquisition analysis and the computer;
the cadmium telluride detector completes measurement of hot electrons, the pulse signal amplifying circuit and the anti-accumulation circuit complete processing of detector signals, and the data acquisition and analysis system completes statistical analysis of energy distribution of the hot electrons so as to realize accurate measurement of the hot electrons of the plasma.
The design of the anti-accumulation circuit can realize the automatic anti-accumulation of the pulse signal of the hot electron detector to remove repeated signals, and ensure the singleness of the pulse signal of the hot electron detector.
Drawings
FIG. 1 is a schematic diagram of a plasma hot electron measurement system;
FIG. 2 is a schematic diagram of a layout measurement channel of an electron energy detector measuring range and measuring direction;
FIG. 3 is a schematic diagram of a detector pulse singleness amplification and anti-pile-up circuit;
FIG. 4 is a measurement waveform signal test after processing by the detector signal amplification and anti-pile-up circuitry;
FIG. 5 is a graph showing the distribution and display of the measurement statistics of the distribution of different energy segments of the plasma hyperthermostable electrons.
Detailed Description
The invention is further illustrated by the following figures and detailed description.
The plasma hot electron measurement system comprises a data server, an acquisition display, a VME case, a pulse data statistics analysis module, an FPGA counter, a detector signal processing module and a cadmium telluride hot electron detector;
the cadmium telluride thermionic detector is used for measuring plasma thermions;
the adoption of cadmium telluride can generate pulse signal waves with different intensity voltages according to the radiation intensity so as to realize the electron energy detection of hot electrons.
The detector signal processing module is used for amplifying the detector signals and performing anti-accumulation processing on the signals, and meanwhile, a denoising circuit is designed to realize noise suppression;
the FPGA counter realizes data acquisition and pulse counting of the hot electron detector signals;
and the pulse data analysis module is used for analyzing and counting the data to obtain the hot electron distribution condition of the 20Kev-160Kev energy section in real time.
The plasma hot electron measurement method is implemented according to the following steps
as shown in fig. 2, the arrangement of the detector at an angle of 1.9 degrees ensures a large plasma hot electron measurement range.
Step 2, processing the detector signals
Comprises signal amplification processing and anti-accumulation circuit processing, and specifically comprises
2.1 Firstly, designing a signal amplifying and anti-stacking circuit;
the amplifying and anti-stacking circuit shown in fig. 3 comprises three operational amplifiers and capacitors and resistors connected with the operational amplifiers;
the inverting input end of the first inverting amplifier is connected with the electron R1, the non-inverting input end of the first inverting amplifier is connected with the resistor R3 and is grounded; a resistor R2 and a capacitor C1 are connected in parallel at the inverting input end and the output end;
the inverting input end of the second inverting amplifier is connected with the electronic R6 and grounded, and a resistor R5 and a capacitor C2 are sequentially connected between the non-inverting input end and the output end of the first inverting amplifier; the resistor R7 is connected in parallel with the non-inverting input end and the output end;
the resistors R9 and R8 are sequentially connected in series between the inverting input end of the third inverting amplifier and the output end of the second inverting amplifier, and a lead wire between R9 and R8 is connected with the capacitor C3 and grounded; the inverting input end and the output end of the third inverting amplifier are connected with the electronic R11 in parallel, and the non-inverting input end of the third inverting amplifier is connected with the resistor R10 and grounded;
the input end of the whole circuit is the current input end of the resistor R1, and the output end is the output end parallel circuit junction end of the third inverting amplifier;
2.2 Detector signal amplification)
The voltage signal is regulated by regulating the resistance values of R1 and R2, and the capacitor C1 is used for compensating the phase of the detector signal and simultaneously playing roles of preventing oscillation and inhibiting high-frequency noise so as to ensure the quality of the detector signal.
2.3 The differential circuit where C2 and R4 are located detects the signal peak variation in the detector signal. The parameters of C2 and R4 need to ensure that R4 x C2 is smaller than the pulse width of all the detector outputs, so that the circuit can ensure that the real-time change of the hot electron signal can be correctly and quickly detected.
2.4 The separation of the differential circuit and the integral circuit is realized by adopting an active homodromous amplifier, and the coupling interference between the circuits is removed.
R5 and R7 are set to have the same resistance value, signals are not processed at all, and R6 is a grounding resistor, so that the influence of high-frequency ground noise on the signal quality of the detector is prevented, and the accuracy of measuring signals is ensured.
2.5 The reduction and separation of differential signals are realized by adopting an integrating circuit where R8 and C3 are positioned. The time constant is consistent with the frequency of the pulse signals, so that the automatic separation of each pulse signal is realized, and the singleness of the hot electron pulse signals of the detector is ensured.
2.6 A third inverting amplifier restores the phase and amplitude of the hot electron pulse signal
The third inverting amplifier with the added rear end can restore the phase and amplitude of the hot electron pulse signal, and meanwhile, when the standard cadmium telluride module is adopted to calibrate the circuit level output, the resistance values of R9 and R11 are adjusted and calibrated, so that the accurate output of the electronic pulse amplitude is realized.
The whole signal processing circuit realizes accurate measurement and processing of the hot electron pulse signal, and meets the requirements of the hot electron measurement on the pulse width and the signal-to-noise ratio of the detector pulse signal.
Step 3, completing data acquisition and pulse height counting of 19 hot electron pulses in a FPGA parallel counting and acquisition mode, and realizing acquisition of amplitude of hot electron pulse signals and pulse height counting
3.1 Using voltage amplitude discriminator to discriminate the level amplitude of hot electron pulse in real time and generating pulse signals of different levels according to the amplitude signal
3.2 The real-time counter collects pulses with different levels and sends the obtained data to the upper computer data processing center for processing through the VME case and the bus protocol;
step 4, separating the hot electron pulse
As shown in FIG. 1, after the upper computer data processing computer obtains the hot electron data, the hot electron data are separated according to the voltage amplitudes (1V, 1.5V, 2V, 2.5V, 3V, 3.5V, 4V and 4.5V) of the hot electron pulse in real time, so as to count and distribute the plasma hot electron pulse amplitudes of different voltages.
And 5, obtaining an energy spectrum distribution curve of 20Kev-160Kev of thermal electron energy in the plasma discharging process according to the thermal electron pulse voltage amplitude statistical result in the step 4 as shown in fig. 5, counting the distribution condition and the distribution characteristic of thermal electrons in different energy segments, and finally storing the obtained measurement analysis result into a database.
Claims (10)
1. The plasma hot electron measurement method is characterized by comprising the following steps of:
step 1, measuring plasma hot electrons by using a cadmium telluride hot electron detector;
step 2, amplifying and anti-stacking the signals obtained by the detector;
step 3, performing data parallel counting and collection of hot electron pulse;
step 4, separating the hot electron pulse;
step 5, obtaining a thermal electron energy spectrum distribution curve in the plasma discharge process;
the step 2 is realized by an amplifying and anti-stacking circuit, and comprises three inverting amplifiers and capacitors and resistors connected with the inverting amplifiers; the inverting input end of the first inverting amplifier is connected with the electron R1, the non-inverting input end of the first inverting amplifier is connected with the resistor R3 and is grounded; a resistor R2 and a capacitor C1 are connected in parallel at the inverting input end and the output end; the inverting input end of the second inverting amplifier is connected with the electronic R6 and grounded, and a resistor R5 and a capacitor C2 are sequentially connected between the non-inverting input end and the output end of the first inverting amplifier; the resistor R7 is connected in parallel with the non-inverting input end and the output end; the resistors R9 and R8 are sequentially connected in series between the inverting input end of the third inverting amplifier and the output end of the second inverting amplifier, and a lead wire between R9 and R8 is connected with the capacitor C3 and grounded; the inverting input end and the output end of the third inverting amplifier are connected with the electronic R11 in parallel, and the non-inverting input end of the third inverting amplifier is connected with the resistor R10 and grounded; the input end of the whole circuit is the current input end of the resistor R1, and the output end is the output end parallel circuit junction end of the third inverting amplifier.
2. A method of plasma hot electron measurement according to claim 1, wherein: each cadmium telluride thermionic detector is arranged with a measuring angular orientation differing by 1.9 degrees, respectively.
3. A method of plasma hot electron measurement according to claim 1, wherein: the resistance values of R1 and R2 are adjusted to realize the adjustment of the voltage signal, and the capacitor C1 is used for compensating the phase of the detector signal and suppressing high-frequency noise.
4. A method of plasma hot electron measurement according to claim 1, wherein: and C2 and R4 are differential circuits, which detect the peak change of the signal in the detector signal, and R4 is smaller than the pulse width of all the detector outputs.
5. A method of plasma hot electron measurement according to claim 1, wherein: all the inverting amplifiers are connected with the differentiating circuit and the integrating circuit, and the resistance values of R5 and R7 are the same.
6. A method of plasma hot electron measurement according to claim 1, wherein: the integrating circuit where R8 and C3 are located realizes the restoration and separation of differential signals, and the time constant is consistent with the pulse signal frequency.
7. A method of plasma hot electron measurement according to claim 1, wherein: and when the standard cadmium telluride module is used for calibrating the level output of the circuit, the resistance values of R9 and R11 are adjusted and calibrated.
8. A method of plasma hot electron measurement according to claim 1, wherein: the step 3 completes the data acquisition and pulse height counting of 19 hot electron pulses in a parallel counting and acquisition mode of FPGA, and is particularly that
3.1 The voltage amplitude discriminator is adopted to discriminate the level amplitude of the hot electron pulse in real time and generate pulse signals with different levels according to the amplitude signals;
3.2 The real-time counter collects the pulses with different levels and performs the separation treatment of the hot electron pulses.
9. A method of plasma hot electron measurement according to claim 8, wherein: in the step 4, the voltage amplitude of the hot electron pulse is designed to be 1V, 1.5V, 2V, 2.5V, 3V, 3.5V, 4V, 4.5V, and the separation process of the hot electron pulse is performed according to the voltage amplitude setting.
10. A method of plasma hot electron measurement according to claim 8, wherein: in the step 5, the thermal electron energy range is defined to be 20Kev-160Kev.
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Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106772540A (en) * | 2016-11-29 | 2017-05-31 | 华中科技大学 | A kind of hard X ray flux detecting system of J TEXT tokamak devices |
CN109143306A (en) * | 2018-07-10 | 2019-01-04 | 上海大学 | Nuclear radiation field imaging device based on cadmium-zinc-teiluride array |
CN110476086A (en) * | 2017-04-06 | 2019-11-19 | 皇家飞利浦有限公司 | Pulse shaper |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07174860A (en) * | 1993-12-17 | 1995-07-14 | Fuji Electric Co Ltd | Differential type counting rate meter circuit |
JP2001337168A (en) * | 2000-05-29 | 2001-12-07 | Jeol Ltd | Ad converter for measuring radiation |
US7564039B1 (en) * | 2004-06-17 | 2009-07-21 | Integrated Sensors, Llc | Dual substrate plasma panel based ionizing radiation detector |
FR2951036A1 (en) * | 2009-10-01 | 2011-04-08 | Commissariat Energie Atomique | DEVICE FOR PROCESSING A SIGNAL DELIVERED BY A RADIATION DETECTOR |
CN105549064B (en) * | 2016-01-05 | 2018-10-02 | 成都理工大学 | A kind of high-resolution X-ray energy disperse spectroscopy based on Si-PIN detector arrays |
JP7041079B6 (en) * | 2016-06-16 | 2022-05-30 | コーニンクレッカ フィリップス エヌ ヴェ | Improved photon counting in spectral radiation detectors |
CN206057219U (en) * | 2016-08-31 | 2017-03-29 | 同方威视技术股份有限公司 | Detector and the detection system for intelligence division energy area |
US10422896B1 (en) * | 2016-10-24 | 2019-09-24 | Triad National Security, Llc | High count rate thermal neutron detectors and electronics |
CN106597519B (en) * | 2016-11-29 | 2018-10-09 | 华中科技大学 | A kind of J-TEXT tokamak devices foreign particle concentration measurement system |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106772540A (en) * | 2016-11-29 | 2017-05-31 | 华中科技大学 | A kind of hard X ray flux detecting system of J TEXT tokamak devices |
CN110476086A (en) * | 2017-04-06 | 2019-11-19 | 皇家飞利浦有限公司 | Pulse shaper |
CN109143306A (en) * | 2018-07-10 | 2019-01-04 | 上海大学 | Nuclear radiation field imaging device based on cadmium-zinc-teiluride array |
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