CN114095674B - Active pixel image sensor, image processing method and storage medium - Google Patents
Active pixel image sensor, image processing method and storage medium Download PDFInfo
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- CN114095674B CN114095674B CN202111365752.4A CN202111365752A CN114095674B CN 114095674 B CN114095674 B CN 114095674B CN 202111365752 A CN202111365752 A CN 202111365752A CN 114095674 B CN114095674 B CN 114095674B
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- H—ELECTRICITY
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- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
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- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
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Abstract
The embodiment of the application provides an active pixel image sensor, an image processing method and a storage medium, wherein the active pixel image sensor comprises the following components: a photodiode PD column; a field effect transistor connected with the PD column; the PD column is used for absorbing RGB monochromatic light and converting corresponding optical signals into electric signals; and the field effect transistor is used for reading out the electric signal and resetting.
Description
Description of the division
The application is based on a Chinese patent application with the application number 201910415214.8 and the application date 2019, 05 and 17, and the application name is an active pixel image sensor, an image processing method and a storage medium, and the application is divided into a plurality of cases within the scope of the description of the Chinese patent application, and the whole content of the Chinese patent application is incorporated by reference.
Technical Field
The present application relates to the field of image processing, and in particular, to an active pixel image sensor, an image processing method, and a storage medium.
Background
The pixel circuits of CMOS image sensors can be divided into two types, passive pixel sensors (Passive Pixel Sensor, PPS) and active pixel sensors (Active Pixel Sensor, APS), where each pixel has more than 3 transistors for implementing amplified readout and reset of signals within the pixel, as shown in fig. 1, taking a 4T pixel image sensor as an example, the workflow of the APS is: electron-hole pairs generated by light irradiation are separated by a Photodiode (PD) electric field, so that electrons move to an n-region and holes move to a p-region; activating a reset tube, resetting the read-out area to a high level, and reading out the reset level; thereafter, a transfer gate is activated to transfer charge from the photosensitive region to the n+ region and read out a signal level from the n+ region; and obtaining the actual effective amplitude corresponding to the signal level by carrying out correlated double sampling on the reset level and the signal level.
However, the existing APS require more than three transistors, and the area occupied by the transistors is large, so that the size of the active pixel sensor is large, and when the size of the active pixel sensor needs to be reduced, the processing requirement on the transistors is increased.
Disclosure of Invention
The embodiment of the application provides an active pixel image sensor, an image processing method and a storage medium, which can reduce the size of the active pixel image sensor.
The technical scheme of the application is realized as follows:
an embodiment of the present application provides an active pixel image sensor, including:
A photodiode PD column;
A field effect transistor connected to the PD column;
the PD column is used for absorbing RGB monochromatic light and converting corresponding optical signals into electric signals;
The field effect transistor is used for reading out the electric signal and resetting.
In the above active pixel image sensor, the size of the PD column is determined based on the resonant wavelength of RGB monochromatic light and the refractive index of the optical signal.
In the above active pixel image sensor, the PD column has a shape including at least a rectangle, a circle, a parallelogram, and a diamond.
In the active pixel image sensor, the field effect transistor comprises a control gate and a floating gate, an isolation belt is arranged between the control gate and the floating gate, and the control gate is connected with the gate of the field effect transistor.
In the above active pixel image sensor, the control gate is configured to aggregate the electric signal into an n+ region by applying a forward bias; when the forward bias voltage is higher than a first voltage, transferring an electric signal of an n+ region into the floating gate, wherein the first voltage is a voltage when tunneling occurs between the n+ region and the floating gate; applying a forward bias to the drain electrode, and recording the voltage of the control gate; and reading out the signal level of the electric signal when the voltage of the control gate is higher than the threshold voltage of the floating gate, wherein the threshold voltage is determined by the signal strength of the optical signal.
In the above active pixel image sensor, the control gate is further configured to apply a reverse bias, and when the reverse bias is greater than a preset voltage threshold, transfer the electrical signal from the floating gate to an n+ region for a reset operation.
In the active pixel image sensor, the field effect transistor is a floating gate metal-oxide semiconductor field effect transistor MOSFET.
In the active pixel image sensor, an n region of the PD column is connected with a p-type substrate of the field effect transistor.
The embodiment of the application provides an image processing method which is applied to an active pixel image sensor, wherein the active pixel image sensor comprises a PD column and a field effect transistor connected with the PD column, and the method comprises the following steps:
Absorbing RGB monochromatic light by using the PD column and converting a corresponding optical signal into an electric signal;
And reading out the electric signal by using the field effect transistor, and performing reset operation by using the field effect transistor so as to perform image processing on the electric signal to obtain a corresponding image, wherein the field effect transistor is used for reading out the electric signal and resetting.
In the above method, the field effect transistor includes a control gate and a floating gate, and the reading the electrical signal by using the field effect transistor includes:
Aggregating the electrical signal into an n+ region by forward biasing the control gate;
When the forward bias voltage is higher than a first voltage, transferring an electric signal of an n+ region into the floating gate, wherein the first voltage is a voltage when tunneling occurs between the n+ region and the floating gate;
applying a forward bias to the drain electrode, and recording the voltage of the control gate;
And reading out the signal level of the electric signal when the voltage of the control gate is higher than the threshold voltage of the floating gate, wherein the threshold voltage is determined by the signal strength of the optical signal.
In the above method, the resetting operation using the fet includes:
applying a reverse bias to the control gate;
And when the reverse bias voltage is larger than a preset voltage threshold value, transferring the electric signal from the floating gate to an n+ region so as to perform reset operation.
An embodiment of the application provides a storage medium having stored thereon a computer program for application to an active pixel image sensor, which computer program, when executed by a processor, implements a method as claimed in any one of the preceding claims.
The embodiment of the application provides an active pixel image sensor, an image processing method and a storage medium, wherein the active pixel image sensor comprises the following components: a photodiode PD column; a field effect transistor connected with the PD column; the PD column is used for absorbing RGB monochromatic light and converting corresponding optical signals into electric signals; and the field effect transistor is used for reading out the electric signal and resetting. By adopting the implementation scheme, each pixel unit in the active pixel image sensor comprises a PD column and a field effect tube vertically connected with the PD column, and the PD column and the field effect tube are utilized to realize the process of carrying out image processing on the collected RGB monochromatic light, so that the size of the active pixel image sensor can be reduced.
Drawings
Fig. 1 is a circuit configuration diagram of a 4T active pixel image sensor according to the prior art;
fig. 2 is a schematic structural diagram of an active pixel image sensor according to an embodiment of the present application;
FIG. 3 is a block diagram of an exemplary active pixel image sensor according to an embodiment of the present application;
FIG. 4 (a) is a top view of a single pixel of an exemplary active pixel image sensor provided by an embodiment of the present application;
FIG. 4 (b) is a top view of a single pixel of an exemplary active pixel image sensor as proposed in the prior art;
Fig. 5 is a flowchart of an image processing method according to an embodiment of the present application.
Detailed Description
It should be understood that the specific embodiments described herein are merely illustrative of the application. And are not intended to limit the application.
Example 1
An embodiment of the present application provides an active pixel image sensor, as shown in fig. 2, including:
A photodiode PD column;
A field effect transistor connected to the PD column;
the PD column is used for absorbing RGB monochromatic light and converting corresponding optical signals into electric signals;
The field effect transistor is used for reading out the electric signal and resetting.
The active pixel image sensor provided by the embodiment of the application is suitable for image processing of the acquired optical signals to obtain images corresponding to the optical signals.
In the embodiment of the application, RGB monochromatic light absorbed by the PD column is subjected to photoelectric conversion in a PD column depletion region, a corresponding optical signal is converted into an electric signal, then the electric signal is transferred and read by a field effect transistor, and reset operation is performed after the electric signal is read.
Optionally, the size of the PD column is determined based on the resonant wavelength of the RGB monochromatic light and the refractive index of the optical signal.
In the embodiment of the present application, each pixel of the active pixel image sensor includes a PD column with a diameter, where the diameter of the PD column is determined based on the resonant wavelength of RGB monochromatic light and the refractive index of the optical signal, or is obtained through optical simulation, and specifically selected according to the actual situation, and the embodiment of the present application is not limited specifically.
In the embodiment of the application, the size of the PD column is determined by using the formula (1)
Size of PD column= (resonance wavelength-preset constant)/refractive index (1)
Exemplary, the PD column has a diameter of 70nm, and its absorbance for blue light is highest, with absorbance up to 95% or more; the diameter of the PD column is 90nm, and the absorption rate of the PD column to green light is highest; the diameter of the PD column is 120nm, and the absorption rate of the PD column to red light is highest.
In the embodiment of the application, the active pixel image sensor realizes resonance absorption of RGB monochromatic light by utilizing the optical resonance of the PD column.
Optionally, the shape of the PD column at least includes rectangle, circle, parallelogram and diamond, and the PD column is specifically selected according to practical situations, which is not specifically limited in the embodiment of the present application.
Optionally, the field effect transistor includes control gate and floating gate, the control gate with set up the median between the floating gate, the control gate with the grid connection of field effect transistor.
Optionally, the n region of the PD column is connected with the p-type substrate of the field effect transistor.
In the embodiment of the application, as shown in fig. 3, a schematic structure diagram of an active pixel image sensor is shown, wherein an n region of a PD column is connected with a p-type substrate of a field effect transistor, a control gate and a floating gate are isolated by an isolation belt, and the control gate is connected with a gate of the field effect transistor.
Optionally, the control gate is configured to concentrate the electrical signal into an n+ region by applying a forward bias; when the forward bias voltage is higher than a first voltage, transferring an electric signal of an n+ region into the floating gate, wherein the first voltage is a voltage when tunneling occurs between the n+ region and the floating gate; applying a forward bias to the drain electrode, and recording the voltage of the control gate; and reading out the signal level of the electric signal when the voltage of the control gate is higher than the threshold voltage of the floating gate, wherein the threshold voltage is determined by the signal strength of the optical signal.
In the embodiment of the application, by applying forward bias to the control gate of the field effect transistor, an electric signal is gathered in the n+ region channel, and when the forward bias is higher than a first voltage during tunneling between the floating gate and the n+ region, the electric signal of the n+ region is transferred to the floating gate, and at the moment, the threshold voltage in the floating gate is increased, wherein the threshold voltage in the floating gate is in direct proportion to the signal intensity of an optical signal.
In the embodiment of the application, after an electric signal is transferred to a floating gate, the source electrode of a field effect transistor is grounded, the drain electrode is positively biased, the voltage of a control gate is recorded in real time, and when the voltage of the control gate is higher than the threshold voltage of the floating gate, the drain electrode flows out current, and at the moment, the signal level of the electric signal is read out through an amplifier.
Optionally, the control gate is further configured to apply a reverse bias, and when the reverse bias is greater than a preset voltage threshold, transfer the electrical signal from the floating gate to an n+ region for performing a reset operation.
In the embodiment of the application, after the signal level of the electric signal is read out, the floating gate needs to be reset, specifically, the control gate is reversely biased, when the reverse bias voltage is larger than the preset voltage threshold value, the electric signal in the floating gate can tunnel out and be neutralized with the hole of the n+ region, so that the threshold voltage in the floating gate is reduced, and at the moment, the reset operation on the floating gate is completed.
Optionally, the field effect transistor is a device such as a floating gate metal-oxide semiconductor field effect transistor MOSFET, which has functions of reading out an electrical signal and resetting, and the embodiment of the application is not specifically limited, and specifically selected according to practical situations.
Thus, a vertical charge transfer active pixel image sensor is generated, as shown in fig. 4 (a), and each pixel only comprises one PD column in the vertical direction, while the top view of the single pixel of the current active pixel image sensor is shown in fig. 4 (b), and each pixel comprises 4 transistors in the vertical direction, so that the area of the whole active pixel image sensor is increased, while the active pixel image sensor in the application only occupies the space of one PD column in the vertical direction, and further the size of the active pixel image sensor is reduced.
It can be understood that each pixel unit in the active pixel image sensor comprises a PD column and a field effect transistor vertically connected with the PD column, and the PD column and the field effect transistor are utilized to implement a process of performing image processing on the collected RGB monochromatic light, so that the size of the active pixel image sensor can be reduced.
Example two
The embodiment of the application provides an image processing method, which is applied to an active pixel image sensor, wherein the active pixel image sensor comprises a PD column and a field effect transistor connected with the PD column, as shown in FIG. 5, the method can comprise the following steps:
s101, utilizing the PD column to absorb RGB monochromatic light and converting a corresponding optical signal into an electric signal.
The image processing method provided by the embodiment of the application is suitable for image processing of the collected optical signals to obtain the scene of the image corresponding to the optical signals.
In the embodiment of the application, the RGB monochromatic light absorbed by the PD column is subjected to photoelectric conversion in the PD column depletion region, and the corresponding optical signal is converted into an electric signal.
In the embodiment of the present application, each pixel of the active pixel image sensor includes a PD column with a diameter, where the diameter of the PD column is determined based on the resonant wavelength of RGB monochromatic light and the refractive index of the optical signal, or is obtained through optical simulation, and specifically selected according to the actual situation, and the embodiment of the present application is not limited specifically.
In the embodiment of the application, the size of the PD column is determined by using the formula (1)
Size of PD column= (resonance wavelength-preset constant)/refractive index (1)
Exemplary, the PD column has a diameter of 70nm, and its absorbance for blue light is highest, with absorbance up to 95% or more; the diameter of the PD column is 90nm, and the absorption rate of the PD column to green light is highest; the diameter of the PD column is 120nm, and the absorption rate of the PD column to red light is highest.
In the embodiment of the application, the active pixel image sensor realizes resonance absorption of RGB monochromatic light by utilizing the optical resonance of the PD column.
Optionally, the shape of the PD column at least includes rectangle, circle, parallelogram and diamond, and the PD column is specifically selected according to practical situations, which is not specifically limited in the embodiment of the present application.
S102, reading out the electric signal by using a field effect transistor, and resetting the electric signal by using the field effect transistor to perform image processing on the electric signal to obtain a corresponding image, wherein the field effect transistor is used for reading out the electric signal and resetting.
After the active pixel image sensor converts the optical signals into the electric signals by using the PD column, the active pixel image sensor reads out the electric signals by using the field effect transistor and performs reset operation by using the field effect transistor so as to perform image processing on the electric signals to obtain corresponding images.
In the embodiment of the application, the process of reading out the electric signal by the active pixel image sensor by utilizing the field effect transistor specifically comprises the following steps: the active pixel image sensor gathers electrical signals to an n+ region by forward biasing the control gate; when the forward bias voltage is higher than a first voltage, the active pixel image sensor transfers an electric signal of the n+ region into the floating gate, wherein the first voltage is a voltage when tunneling occurs between the n+ region and the floating gate; and applying a forward bias to the drain electrode to record the voltage of the control gate; the active pixel image sensor senses a signal level of the electrical signal when a voltage of the control gate is higher than a threshold voltage of the floating gate, wherein the threshold voltage is determined by a signal strength of the optical signal.
In the embodiment of the application, the threshold voltage in the floating gate is in direct proportion to the signal strength of the optical signal.
In the embodiment of the application, after an electric signal is transferred to a floating gate, the source electrode of a field effect transistor is grounded, the drain electrode is positively biased, the voltage of a control gate is recorded in real time, and when the voltage of the control gate is higher than the threshold voltage of the floating gate, the drain electrode flows out current, and at the moment, the signal level of the electric signal is read out through an amplifier.
In the embodiment of the application, the resetting operation of the active pixel image sensor by using the field effect transistor specifically comprises the following steps: the active pixel image sensor reverse biases the control gate; when the reverse bias voltage is greater than a preset voltage threshold, the active pixel image sensor transfers an electrical signal from the floating gate to the n+ region for a reset operation.
In the embodiment of the application, after the signal level of the electric signal is read out, the floating gate needs to be reset, specifically, the control gate is reversely biased, when the reverse bias voltage is larger than the preset voltage threshold value, the electric signal in the floating gate can tunnel out and be neutralized with the hole of the n+ region, so that the threshold voltage in the floating gate is reduced, and at the moment, the reset operation on the floating gate is completed.
In the embodiment of the application, after the active pixel image sensor reads out the electric signal by using the field effect transistor, the active pixel image sensor performs image processing on the electric signal to obtain a corresponding image.
It can be understood that each pixel unit in the active pixel image sensor comprises a PD column and a field effect transistor vertically connected with the PD column, and the PD column and the field effect transistor are utilized to implement a process of performing image processing on the collected RGB monochromatic light, so that the size of the active pixel image sensor can be reduced.
Example III
An embodiment of the present application provides a storage medium having stored thereon a computer program, where the computer readable storage medium stores one or more programs, where the one or more programs are executable by one or more processors and applied to an active pixel image sensor, where the computer program implements the image processing method according to the second embodiment.
Specifically, when a program instruction corresponding to an image processing method in the present embodiment is read or executed by an electronic device, the method includes the following steps:
Absorbing RGB monochromatic light by using the PD column and converting a corresponding optical signal into an electric signal;
And reading out the electric signal by using the field effect transistor, and performing reset operation by using the field effect transistor so as to perform image processing on the electric signal to obtain a corresponding image, wherein the field effect transistor is used for reading out the electric signal and resetting.
In an embodiment of the present invention, further, the field effect transistor includes a control gate and a floating gate, the electric signal is read out by using the field effect transistor, the one or more programs are executed by the one or more processors, and specifically implement the following steps:
Aggregating the electrical signal into an n+ region by forward biasing the control gate;
When the forward bias voltage is higher than a first voltage, transferring an electric signal of an n+ region into the floating gate, wherein the first voltage is a voltage when tunneling occurs between the n+ region and the floating gate;
applying a forward bias to the drain electrode, and recording the voltage of the control gate;
And reading out the signal level of the electric signal when the voltage of the control gate is higher than the threshold voltage of the floating gate, wherein the threshold voltage is determined by the signal strength of the optical signal.
In an embodiment of the present invention, further, the substrate type includes a dielectric material or a metal thin film having a refractive index greater than a preset refractive index.
In an embodiment of the present invention, further, the reset operation is performed by using the fet, and the one or more programs are executed by the one or more processors, so as to specifically implement the following steps:
applying a reverse bias to the control gate;
And when the reverse bias voltage is larger than a preset voltage threshold value, transferring the electric signal from the floating gate to an n+ region so as to perform reset operation.
The foregoing description is only of the preferred embodiments of the present application, and is not intended to limit the scope of the present application.
Claims (11)
1. An active pixel image sensor, the active pixel image sensor comprising:
a photodiode PD column; the PD column is used for absorbing RGB monochromatic light and converting corresponding optical signals into electric signals; the size of the PD column is determined based on the resonant wavelength of the RGB monochromatic light and the refractive index of the optical signal;
A field effect transistor connected to the PD column; the field effect transistor is used for reading out the electric signal and resetting.
2. The active pixel image sensor of claim 1, wherein the PD column shape includes at least a rectangle, a circle, a parallelogram, and a diamond.
3. The active pixel image sensor of claim 1, wherein the field effect transistor comprises a control gate and a floating gate, a separator is disposed between the control gate and the floating gate, and the control gate is connected to the gate of the field effect transistor.
4. An active pixel image sensor as claimed in claim 3, wherein,
The control gate is used for gathering the electric signal into an n+ region by applying forward bias; when the forward bias voltage is higher than a first voltage, transferring an electric signal of an n+ region into the floating gate, wherein the first voltage is a voltage when tunneling occurs between the n+ region and the floating gate; applying a forward bias to the drain electrode, and recording the voltage of the control gate; and reading out the signal level of the electric signal when the voltage of the control gate is higher than the threshold voltage of the floating gate, wherein the threshold voltage is determined by the signal strength of the optical signal.
5. An active pixel image sensor as claimed in claim 3, wherein,
The control gate is further used for applying a reverse bias voltage, and when the reverse bias voltage is greater than a preset voltage threshold value, the electric signal is transferred from the floating gate to the n+ region so as to perform reset operation.
6. The active pixel image sensor of claim 1, wherein the field effect transistor is a floating gate metal-oxide semiconductor field effect transistor MOSFET.
7. The active pixel image sensor of claim 1, wherein the n-region of the PD column is connected to a p-type substrate of a field effect transistor.
8. An image processing method, applied to an active pixel image sensor, the active pixel image sensor comprising a PD column and a field effect transistor connected to the PD column, the method comprising:
Absorbing RGB monochromatic light by using the PD column and converting a corresponding optical signal into an electric signal; the size of the PD column is determined based on the resonant wavelength of the RGB monochromatic light and the refractive index of the optical signal;
And reading out the electric signal by using the field effect transistor, and performing reset operation by using the field effect transistor so as to perform image processing on the electric signal to obtain a corresponding image, wherein the field effect transistor is used for reading out the electric signal and resetting.
9. The method of claim 8, wherein the field effect transistor comprises a control gate and a floating gate, and wherein the reading the electrical signal with the field effect transistor comprises:
Aggregating the electrical signal into an n+ region by forward biasing the control gate;
When the forward bias voltage is higher than a first voltage, transferring an electric signal of an n+ region into the floating gate, wherein the first voltage is a voltage when tunneling occurs between the n+ region and the floating gate;
applying a forward bias to the drain electrode, and recording the voltage of the control gate;
And reading out the signal level of the electric signal when the voltage of the control gate is higher than the threshold voltage of the floating gate, wherein the threshold voltage is determined by the signal strength of the optical signal.
10. The method of claim 9, wherein the resetting with the fet comprises:
applying a reverse bias to the control gate;
And when the reverse bias voltage is larger than a preset voltage threshold value, transferring the electric signal from the floating gate to an n+ region so as to perform reset operation.
11. A storage medium having stored thereon a computer program for application to an active pixel image sensor, which computer program, when executed by a processor, implements the method of any of claims 8-10.
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