CN114093940A - GaN composite substrate and preparation method thereof - Google Patents
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- CN114093940A CN114093940A CN202111401980.2A CN202111401980A CN114093940A CN 114093940 A CN114093940 A CN 114093940A CN 202111401980 A CN202111401980 A CN 202111401980A CN 114093940 A CN114093940 A CN 114093940A
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- 239000000758 substrate Substances 0.000 title claims abstract description 67
- 239000002131 composite material Substances 0.000 title claims abstract description 29
- 238000002360 preparation method Methods 0.000 title claims abstract description 9
- 229910003460 diamond Inorganic materials 0.000 claims abstract description 79
- 239000010432 diamond Substances 0.000 claims abstract description 79
- 238000000034 method Methods 0.000 claims abstract description 12
- 238000005530 etching Methods 0.000 claims abstract description 10
- 238000005498 polishing Methods 0.000 claims abstract description 7
- 238000006243 chemical reaction Methods 0.000 claims description 21
- 229920002120 photoresistant polymer Polymers 0.000 claims description 15
- 238000007740 vapor deposition Methods 0.000 claims description 15
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 14
- 238000004140 cleaning Methods 0.000 claims description 13
- 238000005229 chemical vapour deposition Methods 0.000 claims description 10
- 239000000843 powder Substances 0.000 claims description 10
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 claims description 10
- 238000004528 spin coating Methods 0.000 claims description 9
- 239000002245 particle Substances 0.000 claims description 8
- 229910021529 ammonia Inorganic materials 0.000 claims description 4
- 150000002902 organometallic compounds Chemical class 0.000 claims description 3
- 238000000259 microwave plasma-assisted chemical vapour deposition Methods 0.000 claims 1
- 230000009286 beneficial effect Effects 0.000 abstract description 3
- 239000013078 crystal Substances 0.000 abstract description 3
- 230000002708 enhancing effect Effects 0.000 abstract 1
- 239000012530 fluid Substances 0.000 description 3
- 238000000227 grinding Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 241000408659 Darpa Species 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/107—Substrate region of field-effect devices
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
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- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3732—Diamonds
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- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
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- H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
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Abstract
The invention discloses a GaN composite substrate and a preparation method thereof, the GaN composite substrate comprises a diamond substrate, wherein a SiN adhesion layer and Al are epitaxially grown on the upper surface of the diamond substratexGa1‑xThe N buffer layer, the GaN layer, be provided with the recess in the SiN adhesion layer, the recess is filled with the diamond layer. Growing a SiN adhesion layer on the upper surface of the diamond substrate; etching the SiN adhesion layer to form a groove; growing a diamond layer in the groove, and thinning and polishing the diamond layer to enable the diamond layer to be flush with the upper surface of the SiN adhesion layer; growing Al on the upper surface of the SiN adhesion layerxGa1‑xN buffer layer; in AlxGa1‑xAnd growing a GaN layer on the N buffer layer to form the GaN composite substrate. The method is beneficial to enhancing the thermal property of the GaN HEMT device on the diamond substrate and improving the crystal quality of the GaN layer.
Description
Technical Field
The invention belongs to the technical field of semiconductors, relates to a GaN composite substrate, and further relates to a preparation method of the GaN composite substrate.
Background
GaN, as a representative third-generation semiconductor, has excellent material characteristics such as a wide band gap, a high electron saturation velocity, a high breakdown electric field, and the like, and the GaN-based HEMT device prepared therefrom is widely used in the fields of high frequency, high voltage, high temperature, and high power. However, due to the self-heating effect, when the GaN-based HEMT device is operated at a high bias voltage and a high operating temperature for a long time, the device characteristics are degraded, such as reduced output leakage current, reduced transconductance, increased gate leakage current, poor gate control capability, and the microwave and switching performance of the device are affected. The substrate material with high thermal conductivity is expected to improve the heat dissipation performance of the device (adv. funct. mater.22(2012)1525), the DARPA starts a near-junction heat transport project in 2011, and the output power of the GaN HEMT device prepared on the diamond substrate per unit area reaches 3.6 times of that of the device on the SiC substrate by improving the heat transfer capacity of the device in the range of hundreds of micrometers near the active region.
However, the lattice mismatch and thermal mismatch between diamond and GaN is large, it is difficult to directly grow a GaN layer on a diamond substrate, and it is easy to generate large stress in the GaN layer, which hinders the performance and stability of the resulting device.
Disclosure of Invention
The invention aims to provide a GaN composite substrate, which solves the problem of poor performance of a GaN-based HEMT device in the prior art.
The technical scheme adopted by the invention is that the GaN composite substrate comprises a diamond substrate, wherein a SiN adhesion layer and Al are epitaxially grown on the upper surface of the diamond substratexGa1-xThe N buffer layer, the GaN layer, be provided with the recess in the SiN adhesion layer, the recess is filled with the diamond layer.
The invention is also characterized in that:
the diamond substrate is 0.3-1mm polycrystalline diamond.
The thickness of the SiN adhesion layer is 40-55 nm.
AlxGa1-xThe thickness of the N buffer layer is 50-110 nm.
The thickness of the GaN layer is 500-1000 nm.
Another object of the present invention is to provide a GaN composite substrate.
The invention adopts another technical scheme that the preparation method of the GaN composite substrate comprises the following steps:
step 1, growing a SiN adhesion layer on the upper surface of a diamond substrate;
step 2, etching the SiN adhesion layer to form a groove;
step 3, growing a diamond layer in the groove, and thinning and polishing the diamond layer to enable the diamond layer to be flush with the upper surface of the SiN adhesion layer;
step 4, growing Al on the upper surface of the SiN adhesion layerxGa1-xN buffer layer;
step 5, in AlxGa1-xAnd growing a GaN layer on the N buffer layer to form the GaN composite substrate.
The specific process of the step 2 is as follows: and spin-coating a positive photoresist on the surface of the SiN adhesion layer, developing according to a preset pattern to form a patterned photoresist layer, corroding the exposed SiN adhesion layer by using an etching solution to form a groove, and cleaning the residual photoresist.
The step 3 specifically comprises the following steps:
step 3.1, carrying out spin coating pretreatment on the groove area by using a diamond micro powder solution with the particle size of 1-100 nm and a spin coater;
3.2, dropwise adding a diamond micro powder solution into the groove area at the rotating speed of 6000 r/min;
and 3.3, putting the product processed in the step 3.2 into a reaction chamber of a microwave plasma chemical vapor deposition device, and preparing a diamond layer in the groove by an MPCVD method.
The step 5 specifically comprises the following steps:
step 5.1, placing the product obtained in the step 4 in a vapor deposition reaction chamber, and introducing trimethyl gallium serving as a Ga source and ammonia serving as an N source into the vapor deposition reaction chamber;
step 5.2, the pressure of the vapor deposition reaction chamber is 40-60 Torr, the substrate temperature is 900-1000 ℃, the flow of ammonia gas is 3000-5000 sccm, the flow of trimethyl gallium is 100-200 sccm, and the metal organic compound chemical vapor deposition technology is used to deposit Al on the substratexGa1-xAnd a GaN layer is grown on the upper surface of the N buffer layer.
The invention has the beneficial effects that: according to the GaN composite substrate, the SiN adhesion layer on the diamond substrate is etched, and the diamond film in the shape of an inserted finger is grown on the SiN adhesion layer, so that the thermal resistance of the SiN adhesion layer is reduced, and the thermal property of a GaN HEMT device on the diamond substrate is enhanced; by introducing a graded Al in which the Al composition x varies linearly from 1 to 0 between the SiN adhesion layer and the GaN layerxGa1-xAnd the N buffer layer enables the lattice misdistribution property between the SiN adhesion layer and the GaN layer to be transited to 0% of the lattice mismatching between the GaN and the GaN, and is beneficial to improving the crystal quality of the GaN layer. The preparation method of the GaN composite substrate is easy to operate and realize.
Drawings
FIG. 1 is a schematic structural view of a GaN composite substrate of the invention;
FIG. 2 is a process diagram of the method of fabricating a GaN composite substrate according to the invention.
In the figure, 1 is a diamond substrate, 2 is a SiN adhesion layer, and 3 is AlxGa1-xN buffer layer, 4.GaN layer, 5. diamond layer.
Detailed Description
The present invention will be described in detail below with reference to the accompanying drawings and specific embodiments.
A GaN composite substrate, as shown in FIG. 1, comprises a diamond substrate 1, wherein a SiN adhesion layer 2 and Al are epitaxially grown on the upper surface of the diamond substrate 1xGa1-xThe N buffer layer 3, the GaN layer 4 and the SiN adhesion layer 2 are internally provided with grooves, diamond layers 5 are filled in the grooves, and the diamond substrate 1 and the diamond layers 5 form an inserted-finger-shaped diamond film. The diamond substrate 1 is polycrystalline diamond of 0.3 to 1 mm. The thickness of the SiN adhesion layer 2 is 40-55 nm. Al (Al)xGa1-xThe thickness of the N buffer layer 3 is 50-110 nm, and Al with the Al component x gradually changing from 1 to 0 linearly is arranged between the SiN adhesion layer 2 and the GaN layer 4xGa1-xAnd an N buffer layer 3. The thickness of the GaN layer 4 is 500-1000 nm.
The preparation method of the GaN composite substrate, as shown in FIG. 2, comprises the following steps:
step 1, growing a SiN adhesion layer 2 on the upper surface of a diamond substrate 1;
step 2, etching the SiN adhesion layer 2 to form a groove;
specifically, a positive photoresist is spin-coated on the surface of the SiN adhesion layer 2, development is performed according to a predetermined pattern to form a patterned photoresist layer, then etching is performed on the exposed SiN adhesion layer 2 by using an etching solution to form a groove, and meanwhile, the remaining photoresist is cleaned.
Step 3, growing a diamond layer 5 in the groove, and thinning and polishing the diamond layer 5 to enable the diamond layer 5 to be flush with the upper surface of the SiN adhesion layer 2;
step 3.1, carrying out spin coating pretreatment on the groove area by using a diamond micro powder solution with the particle size of 1-100 nm and a spin coater;
3.2, dropwise adding a diamond micro powder solution into the groove area at the rotating speed of 5000-7000 r/min;
and 3.3, putting the product obtained in the step 3.2 into a reaction chamber of a Microwave Plasma Chemical Vapor Deposition (MPCVD) device, and preparing a diamond layer 5 in the groove by an MPCVD method. And then, carrying out fine polishing treatment on the diamond layer 5 by using grinding fluid with the particle size of 0.2-10 microns to enable the upper surface of the diamond layer 5 to be flush with the upper surface of the SiN adhesion layer 2, and cleaning the surface of the diamond layer 5, wherein the cleaning mode can be at least one of plasma cleaning, organic solvent cleaning and deionized water cleaning.
Step 4, growing Al on the upper surface of the SiN adhesion layer 2xGa1-xAn N buffer layer 3;
step 5, in AlxGa1-xAnd a GaN layer 4 grows on the N buffer layer 3 to form a GaN composite substrate.
Step 5.1, placing the product obtained in the step 4 in a vapor deposition reaction chamber, and introducing trimethyl gallium serving as a Ga source and ammonia serving as an N source into the vapor deposition reaction chamber;
step 5.2, the pressure of the vapor deposition reaction chamber is 40-60 Torr, the substrate temperature is 900-1000 ℃, the flow of ammonia gas is 3000-5000 sccm, the flow of trimethyl gallium is 100-200 sccm, and the metal organic compound chemical vapor deposition technology is used to deposit Al on the substratexGa1-xA GaN layer 4 is grown on the upper surface of the N buffer layer 3.
Through the mode, the GaN composite substrate provided by the invention has the advantages that the SiN adhesion layer on the diamond substrate is etched, and the diamond film in the shape of an inserted finger is grown on the SiN adhesion layer, so that the thermal resistance of the SiN adhesion layer is reduced, and the thermal property of a GaN HEMT device on the diamond substrate is enhanced; by introducing a graded Al in which the Al composition x varies linearly from 1 to 0 between the SiN adhesion layer and the GaN layerxGa1-xThe N buffer layer enables lattice misdistribution between the SiN adhesion layer and the GaN layer to be transited to the GaN, and the crystal quality of the GaN layer is improved. The preparation method of the GaN composite substrate is easy to operate and realize.
Example 1
Step 1, selecting polycrystalline diamond with the thickness of 0.5mm as a diamond substrate 1, and growing a 40nm SiN adhesion layer 2 on the upper surface of the diamond substrate 1;
and 2, spin-coating a positive photoresist on the surface of the SiN adhesion layer 2, developing according to a preset pattern to form a patterned photoresist layer, corroding the exposed SiN adhesion layer 2 by using an etching solution to form a groove, and cleaning the residual photoresist.
Step 3, carrying out spin coating pretreatment on the groove area by using a diamond micro powder solution with the particle size of 50nm and a spin coater; dripping 8 drops of diamond micro powder solution into the groove area at the rotating speed of 5000/min; the processed product is placed in a reaction chamber of a Microwave Plasma Chemical Vapor Deposition (MPCVD) device, and the diamond layer 5 is prepared in the groove by an MPCVD method. And then, carrying out fine polishing treatment on the diamond layer 5 by adopting grinding fluid with the particle size of 1 mu m so as to enable the upper surface of the diamond layer 5 to be flush with the upper surface of the SiN adhesion layer 2, and cleaning the surface of the diamond layer 5 by adopting a plasma cleaning mode.
Step 4, growing Al with the thickness of 50nm and the linear gradual change of Al component x from 1 to 0 on the upper surface of the SiN adhesion layer 2xGa1-xAn N buffer layer 3;
step 5, placing the product obtained in the step 4 in a vapor deposition reaction chamber, and introducing trimethyl gallium serving as a Ga source and ammonia serving as an N source into the vapor deposition reaction chamber; setting the pressure in the vapor deposition reaction chamber at 40Torr, the substrate temperature at 900 deg.C, the ammonia gas flow at 3000sccm, and the trimethyl gallium flow at 100sccm, and performing chemical vapor deposition on Al by using metal organic compoundxGa1-xA GaN layer 4 having a thickness of 500nm is grown on the upper surface of the N buffer layer 3.
Example 2
Step 1, selecting polycrystalline diamond with the thickness of 1mm as a diamond substrate 1, and growing a 55nm SiN adhesion layer 2 on the upper surface of the diamond substrate 1;
and 2, spin-coating a positive photoresist on the surface of the SiN adhesion layer 2, developing according to a preset pattern to form a patterned photoresist layer, corroding the exposed SiN adhesion layer 2 by using an etching solution to form a groove, and cleaning the residual photoresist.
Step 3, carrying out spin coating pretreatment on the groove area by using a diamond micro powder solution with the particle size of 80nm and a spin coater; dripping 9 drops of diamond micro powder solution into the groove area at the rotating speed of 7000/min; the processed product is placed in a reaction chamber of a Microwave Plasma Chemical Vapor Deposition (MPCVD) device, and the diamond layer 5 is prepared in the groove by an MPCVD method. And then, carrying out fine polishing treatment on the diamond layer 5 by adopting grinding fluid with the particle size of 3 mu m so as to enable the upper surface of the diamond layer 5 to be flush with the upper surface of the SiN adhesion layer 2, and cleaning the surface of the diamond layer 5 by adopting a plasma cleaning mode.
Step 4, growing Al with the thickness of 60nm and the linear gradual change of Al component x from 1 to 0 on the upper surface of the SiN adhesion layer 2xGa1-xAn N buffer layer 3;
step 5, placing the product obtained in the step 4 in a vapor deposition reaction chamber, simultaneously introducing trimethyl gallium serving as a Ga source and ammonia gas serving as an N source into the vapor deposition reaction chamberIn the gas phase precipitation reaction chamber; setting the pressure in the vapor deposition reaction chamber at 60Torr, the substrate temperature at 950 deg.C, the ammonia gas flow at 4500sccm, and the trimethyl gallium flow at 150sccm, and performing chemical vapor deposition on Al by using metal organic compoundxGa1-xA GaN layer 4 having a thickness of 800nm is grown on the upper surface of the N buffer layer 3.
Claims (9)
- The GaN composite substrate is characterized by comprising a diamond substrate (1), wherein a SiN adhesion layer (2) and Al are epitaxially grown on the upper surface of the diamond substrate (1)xGa1-xThe N buffer layer (3) and the GaN layer (4), wherein a groove is formed in the SiN adhesion layer (2), and a diamond layer (5) is filled in the groove.
- 2. The GaN composite substrate according to claim 1, wherein the diamond substrate (1) is 0.3-1mm polycrystalline diamond.
- 3. The GaN composite substrate according to claim 1, wherein the thickness of the SiN adhesion layer (2) is 40-55 nm.
- 4. The GaN composite substrate of claim 1, wherein the Al isxGa1-xThe thickness of the N buffer layer (3) is 50-110 nm.
- 5. The GaN composite substrate according to claim 1, characterized in that the GaN layer (4) has a thickness of 500-1000 nm.
- The preparation method of the GaN composite substrate is characterized by comprising the following steps of:step 1, growing a SiN adhesion layer (2) on the upper surface of a diamond substrate (1);step 2, etching the SiN adhesion layer (2) to form a groove;step 3, growing a diamond layer (5) in the groove, and thinning and polishing the diamond layer (5) to enable the diamond layer (5) to be flush with the upper surface of the SiN adhesion layer (2);step 4, growing Al on the upper surface of the SiN adhesion layer (2)xGa1-xAn N buffer layer (3);step 5, in the AlxGa1-xAnd growing a GaN layer (4) on the N buffer layer (3) to form a GaN composite substrate.
- 7. The method for preparing a GaN composite substrate according to claim 6, wherein the specific process of step 2 is as follows: and spin-coating a positive photoresist on the surface of the SiN adhesion layer (2), developing according to a preset pattern to form a patterned photoresist layer, corroding the exposed SiN adhesion layer (2) by using an etching solution to form a groove, and cleaning the residual photoresist.
- 8. The method of claim 6, wherein step 3 comprises the steps of:step 3.1, using a diamond micro powder solution with the particle size of 1-100 nm and performing spin coating pretreatment on the groove area by using a spin coater;3.2, dropwise adding a diamond micro powder solution into the groove area at the rotating speed of 6000 r/min;and 3.3, putting the product processed in the step 3.2 into a reaction chamber of a microwave plasma chemical vapor deposition device, and preparing a diamond layer (5) in the groove by an MPCVD method.
- 9. The method of claim 6, wherein step 5 comprises the steps of:step 5.1, placing the product obtained in the step 4 in a vapor deposition reaction chamber, and introducing trimethyl gallium serving as a Ga source and ammonia serving as an N source into the vapor deposition reaction chamber;step 5.2, the pressure of the vapor deposition reaction chamber is 40-60 Torr, the temperature of the substrate is 900-1000 ℃, the flow of ammonia gas is 3000-5000 sccm, the flow of trimethyl gallium is 100-200 sccm, and the metal organic compound chemical vapor deposition technology is utilized to deposit Al on the substratexGa1-xN bufferAnd growing a GaN layer (4) on the upper surface of the buffer layer (3).
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