CN114078716A - 半导体器件及其制造方法 - Google Patents

半导体器件及其制造方法 Download PDF

Info

Publication number
CN114078716A
CN114078716A CN202110879321.3A CN202110879321A CN114078716A CN 114078716 A CN114078716 A CN 114078716A CN 202110879321 A CN202110879321 A CN 202110879321A CN 114078716 A CN114078716 A CN 114078716A
Authority
CN
China
Prior art keywords
semiconductor die
conductive core
electrical connector
solder layer
disposed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202110879321.3A
Other languages
English (en)
Inventor
R·克尼佩尔
A·海因里希
T·沙夫
S·施瓦布
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies AG
Original Assignee
Infineon Technologies AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies AG filed Critical Infineon Technologies AG
Publication of CN114078716A publication Critical patent/CN114078716A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L24/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
    • H01L24/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/005—Soldering by means of radiant energy
    • B23K1/0056—Soldering by means of radiant energy soldering by means of beams, e.g. lasers, E.B.
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L24/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L24/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/77—Apparatus for connecting with strap connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05624—Aluminium [Al] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05647—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05655—Nickel [Ni] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
    • H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
    • H01L2224/37001—Core members of the connector
    • H01L2224/3701—Shape
    • H01L2224/37012—Cross-sectional shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
    • H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
    • H01L2224/37001—Core members of the connector
    • H01L2224/37025—Plural core members
    • H01L2224/3703—Stacked arrangements
    • H01L2224/37033—Three-layer arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
    • H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
    • H01L2224/37001—Core members of the connector
    • H01L2224/37099—Material
    • H01L2224/371—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/37117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/37124—Aluminium [Al] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
    • H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
    • H01L2224/37001—Core members of the connector
    • H01L2224/37099—Material
    • H01L2224/371—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/37138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/37147—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
    • H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
    • H01L2224/3754—Coating
    • H01L2224/37599—Material
    • H01L2224/376—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/37601—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/37611—Tin [Sn] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
    • H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
    • H01L2224/3754—Coating
    • H01L2224/37599—Material
    • H01L2224/376—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/37638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/37655—Nickel [Ni] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
    • H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
    • H01L2224/3754—Coating
    • H01L2224/37599—Material
    • H01L2224/37686—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
    • H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
    • H01L2224/3754—Coating
    • H01L2224/37599—Material
    • H01L2224/3769—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/4005—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/4005—Shape
    • H01L2224/4009—Loop shape
    • H01L2224/40091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/401—Disposition
    • H01L2224/40135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/40137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H01L2224/40139—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate with an intermediate bond, e.g. continuous strap daisy chain
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/401—Disposition
    • H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/40225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/405—Material
    • H01L2224/40505—Material at the bonding interface
    • H01L2224/40507—Material at the bonding interface comprising an intermetallic compound
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H01L2224/45014—Ribbon connectors, e.g. rectangular cross-section
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H01L2224/45015—Cross-sectional shape being circular
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H01L2224/45016—Cross-sectional shape being elliptic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45025—Plural core members
    • H01L2224/4503—Stacked arrangements
    • H01L2224/45033—Three-layer arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45565—Single coating layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45601—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/45611—Tin (Sn) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H01L2224/45686—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H01L2224/4569—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H01L2224/48139—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate with an intermediate bond, e.g. continuous wire daisy chain
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48507—Material at the bonding interface comprising an intermetallic compound
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/77—Apparatus for connecting with strap connectors
    • H01L2224/7725—Means for applying energy, e.g. heating means
    • H01L2224/77261—Laser
    • H01L2224/77263—Laser in the upper part of the bonding apparatus, e.g. in the wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/77—Apparatus for connecting with strap connectors
    • H01L2224/7725—Means for applying energy, e.g. heating means
    • H01L2224/773—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/77343—Means for applying energy, e.g. heating means by means of pressure by ultrasonic vibrations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/78261—Laser
    • H01L2224/78263—Laser in the upper part of the bonding apparatus, e.g. in the capillary or wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78343—Means for applying energy, e.g. heating means by means of pressure by ultrasonic vibrations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7855—Mechanical means, e.g. for severing, pressing, stamping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
    • H01L2224/84053—Bonding environment
    • H01L2224/84054—Composition of the atmosphere
    • H01L2224/84055—Composition of the atmosphere being oxidating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
    • H01L2224/84053—Bonding environment
    • H01L2224/84054—Composition of the atmosphere
    • H01L2224/84065—Composition of the atmosphere being reducing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
    • H01L2224/842—Applying energy for connecting
    • H01L2224/84201—Compression bonding
    • H01L2224/84205—Ultrasonic bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
    • H01L2224/842—Applying energy for connecting
    • H01L2224/8421—Applying energy for connecting with energy being in the form of electromagnetic radiation
    • H01L2224/84214—Applying energy for connecting with energy being in the form of electromagnetic radiation using a laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
    • H01L2224/848—Bonding techniques
    • H01L2224/84801—Soldering or alloying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
    • H01L2224/848—Bonding techniques
    • H01L2224/84801—Soldering or alloying
    • H01L2224/8482—Diffusion bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
    • H01L2224/848—Bonding techniques
    • H01L2224/84801—Soldering or alloying
    • H01L2224/8482—Diffusion bonding
    • H01L2224/84825—Solid-liquid interdiffusion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85053—Bonding environment
    • H01L2224/85054—Composition of the atmosphere
    • H01L2224/85055—Composition of the atmosphere being oxidating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85053—Bonding environment
    • H01L2224/85054—Composition of the atmosphere
    • H01L2224/85065—Composition of the atmosphere being reducing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85205—Ultrasonic bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/8521—Applying energy for connecting with energy being in the form of electromagnetic radiation
    • H01L2224/85214—Applying energy for connecting with energy being in the form of electromagnetic radiation using a laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/858—Bonding techniques
    • H01L2224/85801—Soldering or alloying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/858—Bonding techniques
    • H01L2224/85801—Soldering or alloying
    • H01L2224/8582—Diffusion bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/858—Bonding techniques
    • H01L2224/85801—Soldering or alloying
    • H01L2224/8582—Diffusion bonding
    • H01L2224/85825—Solid-liquid interdiffusion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Mechanical Engineering (AREA)
  • Laser Beam Processing (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Die Bonding (AREA)

Abstract

本公开内容涉及半导体器件及其制造方法。一种用于制造半导体器件的方法包括：提供半导体管芯；在半导体管芯上方布置电连接器，电连接器包括导电芯、布置在导电芯的第一侧上的吸收特征、以及布置在导电芯的与第一侧相对且面向半导体管芯的第二侧上的焊料层；以及通过用激光加热焊料层将电连接器焊接到半导体管芯上，其中，激光照射吸收特征，并且吸收的能量从吸收特征通过导电芯传递到焊料层。

Description

半导体器件及其制造方法
技术领域
本公开内容总体上涉及半导体器件以及制造半导体器件的方法。
背景技术
用于制造半导体器件的方法可以例如包括将半导体管芯和电连接器彼此耦接的操作。这种耦接操作可以包括通过使用例如超声激励(ultrasonic excitation)来加热电连接器，以便形成熔接接头或焊接接头。此外，电连接器可以具有相对高的厚度，以便提供高载流量和/或高鲁棒性。这可能使得将电连接器焊接或熔接到半导体管芯成为问题，因为为了形成焊接接头或熔接接头，可能需要相对大量的能量。过热(例如熔接所需的温度)和/或过大的机械应力(例如由超声激励引起)可能损坏半导体管芯。改进的半导体器件和改进的制造半导体器件的方法可以帮助解决这些和其他问题。
通过独立权利要求的特征来解决本发明所基于的问题。在从属权利要求中描述了另外的有利示例。
发明内容
各个方面涉及一种用于制造半导体器件的方法，该方法包括：提供半导体管芯；在半导体管芯上方布置电连接器，电连接器包括导电芯、布置在导电芯的第一侧上的吸收特征(absorbing feature)、以及布置在导电芯的第二侧上的焊料层，第二侧与第一侧相对并且面向半导体管芯；以及通过用激光加热焊料层将电连接器焊接到半导体管芯上，其中，激光照射吸收特征，并且吸收的能量从吸收特征通过导电芯传递到焊料层。
各个方面涉及一种半导体器件，包括：半导体管芯和布置在半导体管芯上方的电连接器，电连接器包括导电芯、布置在导电芯的第一侧上并且背对半导体管芯的吸收特征、以及布置在导电芯的与第一侧相对的第二侧上并且将电连接器耦接到半导体管芯的焊接接头。
附图说明
附图示出了示例，并且与说明书一起用于解释本公开内容的原理。将易于理解本公开内容的其他示例和许多预期优点，因为通过参考以下的具体实施方式它们变得更好理解。附图中的元件不一定相对于彼此成比例。相同的附图标记标明相应的类似部件。
图1示出了包括半导体管芯和耦接到半导体管芯的电连接器的半导体器件的侧视图。
图2示出了另一半导体器件的侧视图，其中半导体管芯被布置在载体上，并且其中电连接器将半导体管芯耦接到载体。
图3A和图3B示出了图1和图2的电连接器的示例的截面图。
图4A至图4F示出了在根据用于制造半导体器件的示例性方法进行的制造的各个阶段的半导体器件。
图5是用于制造半导体器件的示例性方法的流程图。
具体实施方式
在以下具体实施方式中，可以参考所描述的(一个或多个)附图的取向来使用诸如“顶部”、“底部”、“左”、“右”、“上”、“下”等方向性术语。因为本公开内容的部件可以以多个不同的取向进行定位，所以方向性术语仅用于说明的目的。应当理解，可以利用其他示例，并且可以进行结构或逻辑改变。
另外，虽然可以仅参照若干实施方式中的一个实施方式公开了示例的特定特征或方面，但是除非另外具体指出或者除非技术上有限制，否则这些特征或方面可以与其他实施方式的一个或多个其他特征或方面组合，只要这种组合对于任何给定或特定应用可能是期望的和有利的。此外，就在具体实施方式或权利要求中使用术语“包括”、“具有”、“带有”或其其他变型而言，这些术语旨在以类似于术语“包括”的方式为包含性的。可以使用术语“耦接”和“连接”及其派生词。应当理解，这些术语可以用于指示两个元件彼此协作或交互，而不管它们是直接物理接触或者电接触，还是它们彼此不直接接触；在“接合”、“附接”或“连接”的元件之间可以提供中间元件或中间层。然而，也有可能“接合”、“附接”或“连接”的元件彼此直接接触。此外，术语“示例性”仅表示作为示例，而不是最佳或最优的。
半导体器件的示例可以使用各种类型的半导体管芯或结合在半导体管芯中的电路，在它们当中包括AC/DC或DC/DC转换器电路、功率MOS晶体管、功率肖特基二极管、JFET(结型栅极场效应晶体管)、功率双极晶体管、逻辑集成电路、模拟集成电路、混合信号集成电路、传感器电路、功率集成电路、具有集成无源器件的芯片等。示例还可以使用包括以下结构的半导体管芯：MOS晶体管结构或垂直晶体管结构等，例如IGBT(绝缘栅双极晶体管)结构，或者一般性的以下晶体管结构，其中至少一个电接触焊盘布置在半导体管芯的第一主面上，并且至少一个其他电接触焊盘布置在与半导体管芯的第一主面相对的半导体管芯的第二主面上。半导体器件的示例还可以使用半导体管芯，其中所有接触焊盘被布置在同一侧上。
(一个或多个)半导体管芯可以由特定的半导体材料(例如Si、SiC、SiGe、GaAs、GaN)或任何其他半导体材料制造。
以下描述的半导体器件可以包括一个或多个半导体管芯。作为示例，可以包括一个或多个功率半导体管芯。此外，一个或多个逻辑集成电路可以包括在半导体器件中。逻辑集成电路可以被配置为控制其他半导体管芯的集成电路，例如功率半导体管芯的集成电路。
图1示出了包括半导体管芯110和电连接器120的半导体器件100。例如，电连接器120被布置在半导体管芯110上方，使得半导体管芯110的第一侧111面向电连接器120的第二侧122。半导体管芯110的与第一侧111相对的第二侧112可以背对电连接器120。电连接器120的与第二侧122相对的第一侧121可以背对半导体管芯110。
电连接器120包括：导电芯130；布置在导电芯130的第一侧131上的吸收特征140，其中，第一侧131背对半导体管芯110；以及布置在导电芯130的与第一侧相对的第二侧132上的焊接接头150，其中，焊接接头150将电连接器120耦接到半导体管芯110。
根据示例，电连接器120包括布置在导电芯130的第二侧132上的焊料层160，其中，焊接接头150是焊料层160的一部分(即，焊接接头150由焊料层160的材料形成)。可能的是，焊接接头150还包括来自半导体管芯110的一些材料和/或来自导电芯130和/或来自吸收特征140的一些材料(特别地，如果电连接器120在激光加工期间附接到半导体管芯110，那么就可以是这种情况：可能发生部分熔化或至少相互扩散，因此最终焊接接头150在一些情况下可以包括焊料材料、芯材料、吸收特征材料和芯片正面材料)。
根据示例，吸收特征140包括布置在导电芯130的第一侧131上的吸收层或抗反射层，或者由布置在导电芯130的第一侧131上的吸收层或抗反射层组成。根据另一示例，吸收特征140是导电芯130自身的第一侧131的特征，例如特定的表面粗糙度、曲率、材料成分等，其促进导电芯130和/或焊接接头150对激光能量的吸收。吸收特征140可以完全覆盖导电芯的第一侧131。然而，吸收特征140也可以仅覆盖第一侧131的一部分。焊接接头150和/或焊料层160单独地或组合地可以完全覆盖导电芯的第二侧132。然而，第二侧132的一部分也可以从焊接接头150和/或焊料层160暴露。
半导体管芯110例如可以是被配置为以高电压和/或高电流操作的功率半导体管芯。半导体管芯110可以是例如二极管或IGBT。半导体管芯110可以具有在第一侧111和第二侧112之间测量的任何合适的厚度，例如1mm或更小、500μm或更小、200μm或更小、100μm或更小、或50μm或更小的厚度。
半导体管芯110可以包括布置在第一侧111上的第一功率电极，其中电连接器120通过焊接接头150耦接到第一功率电极。半导体管芯110可以包括布置在第二侧112上的第二功率电极。第一和第二功率电极可以例如是源电极、漏电极、发射极电极或集电极电极。
半导体管芯110的第一功率电极可以包括一个或多个金属化层，其中焊接接头150被布置在一个或多个金属化层的最外面。最外金属化层可以例如包括Al或Cu或由Al或Cu组成。
半导体管芯110还可以包括控制电极，例如栅电极，其可以例如在第一侧111上横向地布置在第一功率电极旁边。半导体器件100可以包括耦接到控制电极的另外的电连接器，例如接合线。
根据示例，电连接器120的导电芯130包括带、线或接触夹。导电芯130可以例如具有150μm或更大、200μm或更大、250μm或更大、300μm或更大、或500μm或更大的厚度t。
根据示例，导电芯130包括Al或Cu或由Al或Cu组成。导电芯130和第一功率电极的最外金属化层可以包括相同的金属或金属合金或由相同的金属或金属合金组成，或者它们可以包括不同的金属或金属合金或由不同的金属或金属合金组成。
吸收特征140和/或焊料层160可以具有任何合适的厚度，例如500μm或更小、200μm或更小、100μm或更小、50μm或更小、10μm或更小、1μm或更小、或者500nm或更小的厚度。吸收特征140和焊料层160可以具有相同的厚度或不同的厚度。此外，焊接接头150的厚度可以与焊料层160的厚度相同或相似。
导电芯130可以主要被配置为电导体。吸收特征140可以主要被配置为对激光束具有良好的吸收特性。特别地，吸收特征140对激光束的吸收率可以高于导电芯130对激光束的吸收率。
可以通过使用激光束加热焊料层160的材料来完全地或至少部分地形成焊接接头150。如下面进一步更详细地描述的，激光束可以被引导到吸收特征140处，并且吸收的能量可以从吸收特征140通过导电芯130传递到焊料层160，或者吸收特征140可以至少改善焊料层160对激光能量的吸收，并且由此促进焊接接头150的形成。与例如使用超声作为热源相比，使用激光来制造焊接接头150可能是有利的。使用例如从超声焊头(bondhead)发射的超声可能在半导体管芯110上施加相对高的机械压力和/或机械应力，并因此可能损坏半导体管芯110。另一方面，通过使用激光作为热源，可以避免这种高压力和/或应力。
此外，通过提供包括熔点低于导电芯的材料的熔点的材料的焊料层160，可以减少制造半导体管芯110和电连接器120之间的接合所需的热量。例如，如果省略焊料层160并且要将导电芯130焊接到半导体管芯110，则将必须将导电芯130加热到例如1085℃(Cu的熔点)。然而，由于电连接器120焊接到半导体管芯110，所以可能仅需要将焊料层160加热到例如180℃至430℃范围内的温度。即，吸收的能量可能足以熔化焊料层160的材料，但不足以熔化导电芯130的材料。由于这些原因，可以避免由于过热损坏半导体管芯110。
根据示例，吸收特征140包括聚合物或由聚合物组成。根据另一示例，吸收特征140包括诸如SnO之类的氧化物层(例如，天然氧化物层或沉积的氧化物层)、焊料层(例如，Sn层)或Ni层，或由诸如SnO之类的氧化物层(例如，天然氧化物层或沉积的氧化物层)、焊料层(例如，Sn层)或Ni层组成。根据示例，吸收特征140和焊料层160是相同的层(即，它们包括相同的材料)。根据另一示例，它们是包括不同材料(例如用于吸收特征140的聚合物和用于焊料层160的焊料材料)的不同层。根据示例，吸收特征140和/或焊料层160被溅射、印刷、浸涂(通过将导电芯130浸入熔融材料中)或电镀沉积在导电芯130上。
根据示例，焊料层160包括Sn、In、Bi、Sb、Zn、Pb或这些金属中的一种或多种的合金，或者由Sn、In、Bi、Sb、Zn、Pb或这些金属中的一种或多种的合金组成。焊料层160可以包括软焊料材料、扩散焊料材料或硬焊料材料。
在焊接接头150是扩散焊接接头的情况下，焊接接头150可以包括一种或多种金属间化合物(IMC)，例如包括Cu和Sn的IMC(如Cu3Sn)。可以通过用激光束熔化焊料层160来形成扩散焊接接头。一旦材料熔化，焊料层160的组分以及导电芯130的材料和半导体管芯110的金属化层的材料可以扩散到彼此中，从而形成具有不同成分的新合金。新合金(即IMC)可以具有比原始焊料层160更高的熔化温度。
图2示出了可以与半导体器件100相似或相同的另一半导体器件200。半导体器件200包括参照图1描述的所有部件，并且它另外包括载体210。
载体210可以例如包括DCB(直接铜接合)、DAB(直接铝接合)、AMB(活性金属钎焊)或引线框架。半导体管芯110可以布置在载体210上并且电耦接到载体210，例如电耦接到载体210的第一焊盘211。电连接器120可以例如耦接到载体210的第二焊盘212，并且可以被配置为将半导体管芯110的第一功率电极与第二焊盘212电连接。第二焊接接头220可用于将电连接器耦接到第二焊盘212。第二焊接接头220可以在结构上与焊接接头150相同，或者它可以具有与焊接接头150不同的结构和/或材料成分。特别地，也可以通过使用激光束加热焊料层160来制造第二焊接接头220。然而，也可以不使用激光来制造第二焊接接头220，例如通过使用超声激励来加热焊料层160来制造第二焊接接头220。
半导体器件200可以可选地包括第二半导体管芯230。第二半导体管芯230可以是例如功率半导体管芯或功率二极管。半导体管芯110和第二半导体管芯230可以通过电连接器120和/或第一焊盘211彼此电耦接。
电连接器120可以通过第三焊接接头240耦接到第二半导体管芯230。第三焊接接头240可以具有与焊接接头150和/或第二焊接接头220相同的结构和相同的材料成分。特别地，也可以通过使用激光束加热焊料层160来制造第三焊接接头240。
根据示例，第二半导体管芯230是被配置为充当半导体管芯110的保护二极管的二极管。在这种情况下，半导体管芯110可以例如包括IGBT。根据另一示例，第二半导体管芯230包括功率晶体管电路。在这种情况下，半导体管芯110、230可以通过电连接器120耦接在一起以形成类似半桥电路的电路。
半导体管芯110可以包括布置在第一侧111上的金属化物113。金属化物113可以是半导体管芯110的第一功率电极的一部分。金属化物113可以对应于第一功率电极的最外金属化层。金属化物113可以例如包括Al、Cu或Ni或由Al、Cu或Ni组成。金属化物113可以例如具有20μm或更小、15μm或更小、或10μm或更小的厚度(垂直于第一侧111测量)。如图2所示，电连接器120可以通过焊接接头150耦接到金属化物113。
半导体器件200可以可选地包括封装半导体管芯110的封装250。封装250可以进一步封装电连接器120和/或第二半导体管芯230。然而，电连接器120也可以至少部分地从封装250暴露。载体210可以完全被封装250封装，或者它可以至少部分地从封装250暴露。封装250可以例如包括塑料框架和/或模制体。
半导体器件200可以可选地包括布置在载体210的下表面213上的基板。基板可以例如通过另外的焊接接头耦接到载体。此外，半导体器件200可以可选地包括布置在基板下方的热沉。热界面材料(TIM)层可以布置在基板和热沉之间。根据另一示例，半导体器件200不包括基板，并且替代地将热沉布置在载体210上。
图3A和图3B示出了电连接器120的两个不同示例的截面图。根据这些示例，电连接器120基本上具有矩形截面。然而，任何其他合适的形状也是可能的，例如，方形(quadratic)、圆形、椭圆形等截面。电连接器120不必具有长方形形状。电连接器120可以具有任何合适的宽度w，例如100μm或更大、200μm或更大、500μm或更大、或者1mm或更大的宽度。
在图3A所示的示例中，吸收特征140布置在导电芯130的第一侧131上，但不布置在侧面(lateral side)133上。同样地，焊接接头150(相应地，焊料层160)布置在导电芯130的第二侧132上，但不布置在侧面133上。
根据另一示例，侧面133至少部分地被吸收特征140和/或焊料层160覆盖。侧面133还可以被不同于吸收特征140和焊料层160的另外的层覆盖，例如被天然氧化物层覆盖。
在图3B所示的示例中，吸收特征140覆盖导电芯130的第一侧131以及还覆盖导电芯130的侧面133的至少部分。同样地，焊接接头150(相应地，焊料层160)覆盖导电芯130的第二侧132以及还覆盖导电芯130的侧面133的至少部分。吸收特征140和焊接接头150(或焊料层160)可以在沿着界面170的侧面处彼此直接接触。界面170可以例如基本上垂直于侧面133布置，或者它可以相对于侧面133倾斜。在吸收特征140和焊料层160由相同材料构成的情况下，可能不存在界面170。
根据图3B中所示的示例，吸收特征140和焊接接头150或焊料层160在侧面133处可以基本上具有相同的厚度。然而，两层中的一层比另一层厚也是可能的。
图4A至图4F示出了在根据用于制造半导体器件的示例性方法进行的制造的各个阶段的半导体器件400。半导体器件400可以与半导体器件100和200相似或相同。
如图4A所示，提供半导体管芯110。这可以包括从半导体晶圆单个切分出半导体管芯110。半导体管芯110可以包括金属化物113。
如图4B所示，将半导体管芯110布置在载体210上。这可以包括将半导体管芯110焊接、胶合、熔接或烧结到载体210。
如图4C所示，将电连接器120焊接到半导体管芯110，例如焊接到金属化物113。这包括用激光束410照射吸收特征140。根据示例，该工艺在环境气氛中或在还原气氛(抑制天然氧化物可以改善焊接接头形成的结果)中执行。根据示例，使用例如引线接合设备的焊头420将电连接器120布置在半导体管芯110上。电连接器120例如可以被提供为条带的一部分，其中通过切穿条带而单个切分出电连接器120，如下面进一步描述的。根据图4C所示的示例，当电连接器120布置在半导体管芯110上时，已经将焊料层160布置在导电芯130上。根据另一示例，替代地，将焊料材料布置在半导体管芯110上(例如，以焊料沉积物或预制件的形式)，并且将电连接器120(没有焊料层160)布置在焊料材料上。
此外，当电连接器120布置在半导体管芯110上时，它可能已经包括结构。这样的结构可以例如包括比在半导体管芯110上方或载体210上方形成跨度的那些部分更厚的、电连接器120的布置在焊接接头上方的那些部分。此外，这样的结构可以例如包括结构化的焊料层160，其不完全覆盖导电芯的第二侧132，而是仅覆盖第二侧132的将要形成焊接接头的那些部分。
根据示例，激光束410通过焊头420被引导到吸收特征140上。为此目的，焊头410可以配备有激光光纤。根据另一个示例，激光光纤不是焊头420的一部分。
激光束410的能量可以部分或完全被吸收特征140吸收，并且从吸收特征140通过导电芯130传递到焊料层160，焊料层160因此变热。一旦吸收了来自激光束410的足够量的能量，焊料层160的材料就可以熔化，或者可以开始至少材料扩散和金属间相形成(intermetallic phase formation)，并且形成焊接接头150。例如，为了在焊料层160的材料中达到300℃的温度，大约25J/cm2的能量密度可能是必要的，并且激光束410的每个脉冲可以提供1和1.5J/cm2之间的能量密度(使用例如kHz脉冲速率激光器设置)。在这种情况下，需要大约20个脉冲来形成焊接接头150(由于高脉冲速率，散热不成为问题)。导电芯130可以充当“散热器”，并且焊料层160可以充当激光束410的能量的“热缓冲器”。因此，可以保护半导体管芯110免受过量的热。
激光束410的能量可以在吸收特征140和/或导电芯130和/或焊料层160中产生形态变化(即，晶体结构的改变)。这些变化可明显地偏离超声激励将在电连接器120中产生的形态变化。通过分析焊接接头150上方的电连接器120中的形态变化，因此可以明确地确定是否使用激光束来制造焊接接头150。
根据示例，没有向下压力或几乎没有向下压力由焊头420施加在电连接器120和半导体管芯110上。例如，焊头420仅轻轻地压下，使得电连接器120和半导体管芯110直接接触，并且确保表面一致性。然而，由于使用激光束410来熔化焊料层160，所以焊头420不必为了便于焊接接头150的制造而施加相对高的压力，而这在使用超声激励代替激光束410的情况下可能是必要的。
根据示例，除了激光束410之外，还可以使用超声激励以便制造焊接接头150。在这种情况下，焊头420可以被配置为将激光束410引导到电连接器120上，并且另外将超声引导到电连接器120上。然而，用于熔化焊料层160的能量仍然可以主要由激光束410提供，而超声仅充当支持焊接接头150的形成的附加能量源。
如图4D所示，电连接器可以焊接到载体210。焊头420可以用于以与上面关于焊接接头150所述的相同方式形成第二焊接接头220。电连接器120也可以不焊接到载体210，而是改为焊接到半导体器件400的不同部件，例如焊接到第二半导体管芯或焊接到任何其他适合的导电元件。
如图4E所示，通过用切割刀片430切割来单个切分出电连接器。切割刀片430可以是焊头420的一部分。在电连接器120不包括带或线而是例如包括接触夹的情况下，可能不必在该点处单个切分出电连接器120，因为它可能已经是单件了。
如图4F所示，半导体器件400可以可选地包括封装250。可以在已经将电连接器120焊接到半导体管芯110和载体210之后提供封装250。
图5是用于制造半导体器件的方法500的流程图。方法500可以例如用于制造半导体器件100、200和400。
方法500包括：在501，提供半导体管芯的操作；在502，在半导体管芯上方布置电连接器的操作，电连接器包括导电芯、布置在导电芯的第一侧上的吸收特征、以及布置在导电芯的与第一侧相对且面向半导体管芯的第二侧上的焊料层；以及在503，通过用激光加热焊料层将电连接器焊接到半导体管芯上的操作，其中，激光照射吸收特征，并且吸收的能量从吸收特征通过导电芯传递到焊料层。
根据方法500的示例，焊料层的材料具有比导电芯的材料的熔点低的熔点，并且吸收的能量足以熔化焊料层的材料但不足以熔化导电芯的材料。即，电连接器被焊接到半导体管芯，但电连接器不被熔接到半导体管芯。
根据方法500的示例，在将电连接器布置在半导体管芯上方之前，将吸收特征和/或焊料层沉积在导电芯上。例如可以通过溅射、印刷或电镀沉积(galvanic deposition)来执行该沉积。
示例
下面，使用具体示例进一步解释半导体器件和用于制造半导体器件的方法。
示例1是一种用于制造半导体器件的方法，该方法包括：提供半导体管芯；在半导体管芯上方布置电连接器，电连接器包括导电芯、布置在导电芯的第一侧上的吸收特征、以及布置在导电芯的与第一侧相对且面向半导体管芯的第二侧上的焊料层；以及通过用激光加热焊料层将电连接器焊接到半导体管芯上，其中，激光照射吸收特征，并且吸收的能量从吸收特征通过导电芯传递到焊料层。
示例2是示例1的方法，其中，焊料层的材料具有比导电芯的材料的熔点低的熔点，并且其中，吸收的能量足以熔化焊料层的材料但不足以熔化导电芯的材料。
示例3是示例1或2的方法，其中，吸收特征对激光束的吸收率高于导电芯对激光束的吸收率。
示例4是前述示例之一的方法，其中，吸收特征包括吸收层或抗反射层，并且其中，吸收层或抗反射层包括聚合物、金属或金属氧化物。
示例5是前述示例之一的方法，其中，焊接包括将电连接器扩散焊接到半导体管芯上。
示例6是前述示例之一的方法，其中，所述电连接器包括线或带。
示例7是前述示例之一的方法，其中，将吸收特征和/或焊料层溅射、印刷、冷轧、浸涂或电镀沉积在导电芯上。
示例8是前述示例之一的方法，其中，除了激光之外还使用超声激励来加热焊料层。
示例9是前述示例之一的方法，其中，将电连接器加热至不超过430℃的温度。
示例10是前述示例之一的方法，其中，电连接器通过焊头布置在半导体管芯上方，并且其中，将激光引导通过焊头。
示例11是前述示例之一的方法，还包括：提供作为条带的一部分的电连接器；以及在焊接之后，通过切穿条带来单个切分出电连接器。
示例12是一种半导体器件，包括：半导体管芯和布置在半导体管芯上方的电连接器，电连接器包括导电芯、布置在导电芯的第一侧上并且背对半导体管芯的吸收特征、以及布置在导电芯的与第一侧相对的第二侧上并且将电连接器耦接到半导体管芯的焊接接头。
示例13是示例12的半导体器件，其中，导电芯具有在第一侧和第二侧之间测量的150μm或更大的厚度。
示例14是示例12或13的半导体器件，其中，半导体管芯包括金属化物，其中，电连接器被焊接到金属化物，并且其中，金属化物具有10μm或更小的厚度。
示例15是示例12至14之一的半导体器件，还包括：导电的衬底，其中，所述半导体管芯布置在所述衬底上，并且其中，所述电连接器将所述半导体管芯电耦接到所述衬底。
示例16是一种装置，包括用于执行根据示例1至11中任一项所述的方法的模块。
虽然已经参照一个或多个实施方式说明和描述了本公开内容，但是可以在不脱离所附权利要求的精神和范围的情况下对所示的示例进行更改和/或修改。特别地，关于由上述部件或结构(组件、设备、电路、系统等)执行的各种功能，除非另外指出，否则用于描述这些部件的术语(包括对“模块”的引用)旨在对应于执行所述部件的指定功能的任何部件或结构(例如，功能上等同)，即使结构上不等同于执行本公开内容的所示示例性实施方式中的功能的所公开的结构。

Claims (15)

1.一种用于制造半导体器件的方法，所述方法包括：
提供半导体管芯，
在所述半导体管芯上方布置电连接器，所述电连接器包括导电芯、布置在所述导电芯的第一侧上的吸收特征、以及布置在所述导电芯的与所述第一侧相对且面向所述半导体管芯的第二侧上的焊料层，以及
通过用激光加热所述焊料层将所述电连接器焊接到所述半导体管芯上，
其中，所述激光照射所述吸收特征，并且吸收的能量从所述吸收特征通过所述导电芯传递到所述焊料层。
2.根据权利要求1所述的方法，其中，所述焊料层的材料具有比所述导电芯的材料的熔点低的熔点，并且其中，所述吸收的能量足以熔化所述焊料层的材料但不足以熔化所述导电芯的材料。
3.根据权利要求1或2所述的方法，其中，所述吸收特征对激光束的吸收率高于所述导电芯对所述激光束的吸收率。
4.根据前述权利要求中任一项所述的方法，其中，所述吸收特征包括吸收层或抗反射层，并且其中，所述吸收层或所述抗反射层包括聚合物、金属或金属氧化物。
5.根据前述权利要求中任一项所述的方法，其中，所述焊接包括将所述电连接器扩散焊接到所述半导体管芯上。
6.根据前述权利要求中任一项所述的方法，其中，所述电连接器包括线或带或片状金属。
7.根据前述权利要求中任一项所述的方法，其中，将所述吸收特征和/或所述焊料层溅射、印刷、冷轧、浸涂或电镀沉积在所述导电芯上。
8.根据前述权利要求中任一项所述的方法，其中，除了所述激光之外还使用超声激励以便加热所述焊料层。
9.根据前述权利要求中任一项所述的方法，其中，所述电连接器被加热至不超过430℃的温度。
10.根据前述权利要求中任一项所述的方法，其中，所述电连接器通过焊头布置在所述半导体管芯上方，并且其中，将所述激光引导通过所述焊头。
11.根据前述权利要求中任一项所述的方法，还包括：
提供作为条带的一部分的所述电连接器，以及
在所述焊接之后，通过切穿所述条带来单个切分出所述电连接器。
12.一种半导体器件，包括：
半导体管芯，以及
布置在所述半导体管芯上方的电连接器，所述电连接器包括导电芯、布置在所述导电芯的第一侧上并且背对所述半导体管芯的吸收特征、以及布置在所述导电芯的与所述第一侧相对的第二侧上并且将所述电连接器耦接到所述半导体管芯的焊接接头。
13.根据权利要求12所述的半导体器件，其中，所述导电芯具有在所述第一侧和所述第二侧之间测量的150μm或更大的厚度。
14.根据权利要求12或13所述的半导体器件，其中，所述半导体管芯包括金属化物，其中，所述电连接器被焊接到所述金属化物，并且其中，所述金属化物具有10μm或更小的厚度。
15.根据权利要求12至14中任一项所述的半导体器件，还包括：
导电的衬底，其中，所述半导体管芯布置在所述衬底上，并且其中，所述电连接器将所述半导体管芯电耦接到所述衬底。
CN202110879321.3A 2020-08-10 2021-08-02 半导体器件及其制造方法 Pending CN114078716A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP20190296.2A EP3955277A1 (en) 2020-08-10 2020-08-10 Semiconductor device and method for fabricating the same
EP20190296.2 2020-08-10

Publications (1)

Publication Number Publication Date
CN114078716A true CN114078716A (zh) 2022-02-22

Family

ID=72046687

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202110879321.3A Pending CN114078716A (zh) 2020-08-10 2021-08-02 半导体器件及其制造方法

Country Status (3)

Country Link
US (1) US12027490B2 (zh)
EP (1) EP3955277A1 (zh)
CN (1) CN114078716A (zh)

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4534811A (en) * 1983-12-30 1985-08-13 International Business Machines Corporation Apparatus for thermo bonding surfaces
KR20000057810A (ko) * 1999-01-28 2000-09-25 가나이 쓰토무 반도체 장치
JP2011101894A (ja) * 2009-11-11 2011-05-26 Toyota Motor Corp 接合構造及び接合方法
US9683278B2 (en) * 2015-06-08 2017-06-20 Infineon Technologies Ag Diffusion solder bonding using solder preforms
JP6860334B2 (ja) 2016-12-06 2021-04-14 株式会社東芝 半導体装置
DE102017213170A1 (de) * 2017-07-31 2019-01-31 Infineon Technologies Ag Löten eines leiters an eine aluminiummetallisierung

Also Published As

Publication number Publication date
US20220045031A1 (en) 2022-02-10
EP3955277A1 (en) 2022-02-16
US12027490B2 (en) 2024-07-02

Similar Documents

Publication Publication Date Title
US10147671B2 (en) Semiconductor device and method for manufacturing same
CN102044451B (zh) 半导体器件的制造方法和电子器件的制造方法
US8298867B2 (en) Method for fabricating a circuit substrate assembly and a power electronics module comprising an anchoring structure for producing a changing temperature-stable solder bond
US7955954B2 (en) Method of making semiconductor devices employing first and second carriers
US20060027900A1 (en) Semiconductor device
CN103035601A (zh) 在烧结银层上包括扩散焊接层的半导体器件
US8637379B2 (en) Device including a semiconductor chip and a carrier and fabrication method
US10236230B2 (en) Electronic device and method for manufacturing the same
JP3627591B2 (ja) パワー半導体モジュールの製造方法
JP4023032B2 (ja) 半導体装置の実装構造及び実装方法
US11682644B2 (en) Semiconductor device with a heterogeneous solder joint and method for fabricating the same
CN107527827B (zh) 通过无焊剂焊接制造的半导体器件
US7646089B2 (en) Semiconductor package, method for manufacturing a semiconductor package, an electronic device, method for manufacturing an electronic device
US20220278026A1 (en) Method for Fabricating a Substrate with a Solder Stop Structure, Substrate with a Solder Stop Structure and Electronic Device
CN111433910B (zh) 半导体装置以及半导体装置的制造方法
EP4064329A2 (en) Method to connect power terminal to substrate within semiconductor package
CN114078716A (zh) 半导体器件及其制造方法
CN110729199A (zh) 半导体封装引线的选择性镀敷
US10236244B2 (en) Semiconductor device and production method therefor
JP3446829B2 (ja) 半導体装置
JP7390826B2 (ja) 半導体装置および半導体装置の製造方法
WO2023157522A1 (ja) 半導体装置
EP4145495A1 (en) Method of manufacturing an electrical interconnect for a semiconductor device as well as the corresponding device having the same
WO2022249806A1 (ja) 半導体装置
WO2022249812A1 (ja) 半導体装置

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination