CN114070242A - AT cutting temperature compensation crystal oscillator of comb-shaped metal film - Google Patents
AT cutting temperature compensation crystal oscillator of comb-shaped metal film Download PDFInfo
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- CN114070242A CN114070242A CN202111303988.5A CN202111303988A CN114070242A CN 114070242 A CN114070242 A CN 114070242A CN 202111303988 A CN202111303988 A CN 202111303988A CN 114070242 A CN114070242 A CN 114070242A
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- 239000013078 crystal Substances 0.000 title claims abstract description 94
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 88
- 239000002184 metal Substances 0.000 title claims abstract description 88
- 239000010453 quartz Substances 0.000 claims abstract description 92
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 92
- 239000000463 material Substances 0.000 claims abstract description 12
- 239000003292 glue Substances 0.000 claims description 6
- 230000000694 effects Effects 0.000 abstract description 7
- 230000003071 parasitic effect Effects 0.000 abstract description 3
- 238000007747 plating Methods 0.000 abstract 1
- 230000035882 stress Effects 0.000 description 11
- 238000000034 method Methods 0.000 description 5
- 230000008602 contraction Effects 0.000 description 4
- 230000018109 developmental process Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical group [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 230000008646 thermal stress Effects 0.000 description 3
- 230000032683 aging Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 238000012888 cubic function Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000012886 linear function Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/19—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator consisting of quartz
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Abstract
The temperature compensation crystal oscillator of the comb-shaped metal film comprises a cuboid quartz wafer, wherein the upper surface and the lower surface of the quartz wafer are rectangular, and two rectangular bosses are arranged on the upper surface; plating a central electrode on the upper and lower surfaces of the quartz wafer, wherein one corner of the central electrode is provided with an extension layer; two ends of the comb-shaped metal film are respectively placed on the two rectangular bosses on the upper surface of the quartz wafer, and the comb-shaped metal film is separated from the central electrode; the comb-shaped metal film is formed by arranging a plurality of metal strips at equal intervals, the metal strips are symmetrically arranged about a y axis, the length direction of the metal strips is consistent with the x axis direction of the rectangular quartz wafer, and the midpoint of the metal strips is on the z axis; the coefficient of thermal expansion of the material of the metal strip is greater than the coefficient of thermal expansion of the quartz wafer 1. The comb-shaped metal film does not increase the overall mass of the electrode area and does not increase the loading effect of the area. And the comb-shaped structure can reduce the force applied by the compensation strips in the z direction, thereby reducing the influence on the working mode of the crystal oscillator or avoiding other parasitic modes.
Description
Technical Field
The invention relates to a quartz crystal resonator, in particular to an AT cutting temperature compensation crystal oscillator of a comb-shaped metal film
Technical Field
The quartz crystal resonator is a core component of a frequency reference source in a modern electronic communication information system, and the requirement on the precision of the quartz crystal resonator is higher and higher along with the development of related technologies in the fields of aviation, aerospace, electronics, communication, machinery and the like. Improving the frequency stability of quartz crystal resonators has become an important issue.
The temperature-frequency characteristic of the quartz crystal oscillator can cause the resonant frequency to change when the working temperature changes, the temperature-frequency characteristic is mainly related to the cut type of the quartz crystal, the common cut types include AT cut, BT cut, SC cut and the like, wherein the relation between the resonant frequency of the AT cut quartz crystal oscillator and the temperature is a cubic function relation, so that the AT cut quartz crystal oscillator has a zero temperature coefficient point and the zero temperature coefficient point falls within the range of the environmental temperature, and the excellent frequency-temperature characteristic enables the AT cut to be one of the most widely applied cut types AT present.
Although the phenomenon that the resonance frequency of the crystal oscillator is changed due to temperature cannot be avoided, frequency difference generated by temperature change can be compensated through some measures, and therefore frequency stability of the quartz crystal oscillator is improved. The existing crystal oscillator temperature compensation technology mainly comprises two types: the first method is to compensate by using a line processing method according to the frequency-temperature characteristics of the quartz crystal oscillator, for example, processing by using an analog, digital or microcomputer to generate a compensation voltage for the quartz crystal oscillator to compensate the frequency variation; the second method is to keep the working temperature of the quartz crystal oscillator at a constant value through a constant temperature device. Although the mode of adjusting through plus control voltage is high in precision and good in temperature compensation effect, the mode is complex in manufacturing and high in cost, and is not favorable for the miniaturization development trend of the crystal oscillator due to the influence of the volumes of some electronic elements, so that the requirements of the current scientific and technological development, particularly the mobile communication field such as mobile phones, are not sufficiently met. The temperature compensation technology is basically only applied to fundamental frequency quartz crystal oscillators but not harmonic overtone quartz crystal oscillators, and the reason is that the fundamental frequency quartz crystal oscillators have good drawability, but poor stability and aging characteristics; the stability and aging characteristic of the harmonic overtone quartz crystal oscillator are superior to those of a fundamental frequency quartz crystal oscillator, but the temperature compensation technology is difficult to realize the pulling of the harmonic overtone quartz crystal oscillator in a wider frequency range and solve the technical problem of the temperature compensation of the harmonic overtone quartz crystal oscillator. The constant temperature device such as a constant temperature bath can keep the working temperature of the quartz crystal oscillator constant, but the mode has high cost, large volume and high power consumption, and is generally only applied to specific occasions.
When the quartz crystal oscillator is stressed, the resonant frequency of the quartz crystal oscillator is changed, which is called as the force-frequency characteristic of the quartz crystal oscillator, and the relationship between the frequency change of the quartz crystal oscillator and the stress change is as follows:
In the formula: l is the length of the quartz crystal oscillator; f. of0Is the resonance frequency of the quartz crystal oscillator; f is the force applied to the quartz crystal oscillator; kfIs the force-frequency coefficient of the quartz crystal oscillator.
At present, some quartz crystal oscillators apply a stress to the crystal oscillator based on the expansion with heat and contraction with cold of the metal when the working temperature of the metal film changes, and compensate the temperature-frequency characteristic by using the force-frequency characteristic of the quartz crystal oscillator. According to the force-frequency characteristic of the crystal, when a pressure force is applied to the x-axis direction of the quartz crystal oscillator, the frequency of the crystal is raised and deviates upwards from the resonance frequency; when a pulling force is applied to the x-axis direction of the central electrode, the frequency of the crystal is pulled down, and the resonance frequency is shifted downwards; when the acting force is larger, the caused frequency offset is larger, and the force magnitude and the frequency offset are in a direct proportion relation; therefore, when the temperature is increased, the expansion amplitude of the metal film is larger than that of the quartz crystal oscillator because the thermal expansion coefficient of the metal film is larger than that of the quartz material, and similarly, when the temperature is reduced, the contraction amplitude of the compensation film is larger than that of the quartz crystal oscillator. Therefore, a part of the variation of the resonant frequency of the quartz crystal oscillator caused by the variation of the working temperature can be offset.
A crystal resonator (application number: 202010238766.9) adopting stress compensation of a strip-shaped compensation film utilizes the method to carry out temperature compensation based on a metal film by utilizing the force frequency characteristic of a quartz crystal oscillator, has the advantages of relatively simple structure, small volume, low power consumption, low cost and the like, but because the compensation strip is placed on an electrode and is contacted with the electrode, the metal film generates stress in the x direction and also generates larger stress in the z direction when the working temperature changes, thereby causing the occurrence of some parasitic modes; but also increases the overall quality of the electrode area, causing a more severe loading effect and thus affecting the performance of the crystal oscillator.
Disclosure of Invention
The present invention provides an AT cut temperature compensation crystal oscillator of a comb-shaped metal film to overcome the above disadvantages of the prior art.
The invention aims to innovate a temperature compensation method of a quartz crystal oscillator, and compensate frequency difference generated by the quartz crystal oscillator when the temperature changes by utilizing the force frequency characteristic of the quartz crystal oscillator through a comb-shaped metal film, thereby being beneficial to the development of the quartz crystal oscillator towards miniaturization.
The invention discloses a temperature compensation method of a quartz crystal oscillator, and provides an AT cutting temperature compensation crystal oscillator of a comb-shaped metal film. The frequency difference generated by the crystal oscillator when the temperature changes is adjusted based on the stress generated by the metal film when the temperature changes, the influence of the temperature on the change of the working frequency of the crystal oscillator is compensated by utilizing the characteristic that the working frequency of the crystal oscillator changes along with the magnitude and the direction of the stress applied to the crystal oscillator, and meanwhile, the change of the resonant frequency caused by the change of the working temperature can be effectively reduced by adopting a plurality of rectangular metal strips so as to improve the frequency stability of the crystal oscillator.
Temperature compensation crystal oscillator of comb-shaped metal film, including quartz chip 1, its characterized in that: the quartz wafer 1 is a cuboid, the upper surface and the lower surface of the quartz wafer 1 are rectangular, and two rectangular bosses are arranged on the upper surface; the upper surface and the lower surface of the quartz wafer 1 are respectively plated with a central electrode 2, one corner of the central electrode 2 is provided with an extension layer 3, the tail end of the extension layer 3 is connected with a glue point 5, and the glue point 5 is a leading-out end of the central electrode 2; setting the vertical axis direction of the upper surface of the quartz wafer 1 as an X axis, setting the horizontal axis direction as a Z axis, and setting the direction which is vertical to the upper surface of the quartz wafer 1 and passes through the intersection point of the X axis and the Z axis as a Y axis; the projections of the central electrodes 2 on the upper surface and the lower surface in the Y-axis direction are overlapped, and the extension layers 3 of the central electrodes 2 on the upper surface and the lower surface are respectively deviated to two sides of the X-axis; the comb-shaped metal film 4 is arranged along the X axis, two ends of the comb-shaped metal film 4 are respectively placed on two rectangular bosses on the upper surface of the quartz wafer 1, and the comb-shaped metal film 4 is separated from the central electrode 2; the comb-shaped metal film 4 is formed by arranging a plurality of metal strips at equal intervals, the metal strips are symmetrically arranged about a y axis, the length direction of the metal strips is consistent with the x axis direction of the rectangular quartz wafer, and the midpoint of the metal strips is on the z axis; the coefficient of thermal expansion of the material of the metal strip is greater than that of the quartz wafer 1.
Preferably, the cross section of the metal strip is rectangular.
Furthermore, the length of the side of the rectangle of the cross section of the metal strip in the Z axis direction is less than that in the X axis direction.
According to the force frequency characteristics of the crystal, when the comb-shaped metal film exerts the pressure in the x-axis direction, the resonance frequency of the crystal oscillator is increased and is higher than the resonance frequency designed in advance; when the metal strip exerts a pulling force in the x-axis direction, the resonance frequency of the crystal oscillator is reduced to be lower than the designed resonance frequency. And the magnitude of the deviation of the resonance frequency is related to the magnitude of the applied force, and when the pulling force (pressure force) is larger, the caused deviation is larger, and the magnitude of the deviation is in a linear function relationship with the applied force. Therefore, when the operating temperature of the crystal oscillator rises, since the thermal expansion coefficient of the metal strip material is larger than that of the rectangular quartz wafer, the comb-shaped metal film expands to a greater extent than the rectangular quartz wafer, and a pulling force can be applied thereto, thereby offsetting a part of the amount of decrease in the crystal oscillator frequency due to the temperature rise. And in the same reason, when the working temperature is reduced, the contraction degree of the comb-shaped metal film is greater than that of the rectangular quartz wafer, and a pressure can be applied to the comb-shaped metal film, so that the increase of the crystal oscillation frequency due to the temperature reduction is counteracted. Therefore, when the temperature changes, the comb-shaped metal film generates corresponding deformation to realize frequency deviation compensation caused by the crystal oscillator along with the temperature change.
The metal strip adopted by the invention has small size in the z direction, so that the generated stress can be intensively applied in the x direction, but the stress generated by a single metal wire is not enough in the x direction to ensure that the temperature compensation achieves the optimal effect, so the comb-shaped metal wire structure consisting of a plurality of metal wires is adopted to achieve the optimal effect;
the boss is arranged on the upper surface of the quartz wafer and used for connecting the comb-shaped metal wire with the quartz wafer, so that the contact between the central electrode and the comb-shaped metal wire is avoided, and the negative adding quality of the central electrode area cannot be increased.
The invention has the advantages that: the comb-shaped metal film is additionally arranged on the upper surface of the traditional quartz crystal resonator, when the temperature changes, the comb-shaped metal film and the quartz crystal have different thermal expansion coefficients, so the expansion and contraction degrees are different, a mutual extrusion acting force is generated at the contact position of the comb-shaped metal film and the quartz crystal, and the larger the working temperature change is, the larger the generated thermal stress is, so the frequency change caused by the temperature can be compensated by using the force-frequency characteristic of the rectangular quartz crystal chip. The thermal expansion coefficient of the comb-shaped metal film material is larger than that of the rectangular quartz wafer, and the comb-shaped metal film 4 is not in contact with the central electrode 2. Since the thickness shear vibration of the crystal oscillator is mainly concentrated in the electrode region, this region also determines the magnitude of the resonance frequency. Contact with the electrode area is avoided, the overall mass of the electrode area is not increased, and the load effect of the area is not increased. And the comb-shaped structure can reduce the force applied by the compensation strips in the z direction, thereby reducing the influence on the working mode of the crystal oscillator or avoiding other parasitic modes.
Description of the drawings:
FIG. 1 is a schematic structural diagram of a comb-shaped metal film temperature compensated crystal oscillator;
FIG. 2 is a graph showing the variation of the frequency of the AT crystal oscillator with temperature;
FIG. 3 is a stress-frequency characteristic curve of a quartz crystal oscillator;
fig. 4 is a temperature-frequency characteristic curve after compensation.
Detailed Description
The technical scheme of the invention is further explained by combining the attached drawings.
As shown in fig. 1, an AT temperature compensated crystal oscillator with a comb-shaped metal film mainly comprises a 1-quartz wafer, wherein the quartz wafer is a cuboid, the upper surface and the lower surface of the quartz wafer are rectangular, and the upper surface (for placing the comb-shaped metal film) is provided with two rectangular bosses; the upper surface and the lower surface of the rectangular quartz wafer are respectively plated with a central electrode 2, one corner of the central electrode 2 is provided with an extension layer 3, the tail end of the extension layer 3 is connected with a glue point 5, and the glue point 5 is a leading-out end of the central electrode 2; setting the vertical axis direction of the upper surface of the quartz wafer 1 as an X axis, setting the horizontal axis direction as a Z axis, and setting the direction which is vertical to the upper surface of the quartz wafer 1 and passes through the intersection point of the X axis and the Z axis as a Y axis; the projections of the central electrodes 2 on the upper surface and the lower surface in the Y-axis direction are overlapped, and the extension layers 3 of the central electrodes 2 on the upper surface and the lower surface are respectively deviated to two sides of the X-axis; the comb-shaped metal film 4 is arranged along the X axis, two ends of the comb-shaped metal film 4 are placed on two bosses on the upper surface of the quartz wafer 1, and the comb-shaped metal film 4 is separated from the central electrode 2. The comb-shaped metal film 4 is formed by arranging a plurality of metal strips with rectangular cross sections at equal intervals, the metal strips are symmetrically arranged about a y axis, the length direction of the metal strips is consistent with the x axis direction of the rectangular quartz wafer, and the middle points of the metal strips are on the z axis.
The back surface of the quartz wafer is also plated with electrodes, and the electrodes on the front surface and the electrodes on the back surface have different extending directions and respectively extend to the dispensing positions of the electrodes.
For convenience of explanation of the following example, we will assume that the material of the comb-shaped metal film is silver, and the length a, thickness b, width c; the width d and the thickness e of the rectangular metal strip; and the material properties of the quartz material and the silver material are explained as follows:
a＝2mm；b＝0.1mm；c＝0.1mm；d＝0.02mm；e＝0.0002mm
silver material:
modulus of elasticity: e ═ 7.32 × 1010N/m；
Coefficient of thermal expansion: α ═ 7.32 × 10-5/℃
Quartz crystal material:
elastic coefficient matrix:
system of thermal expansionNumber: 1.371X 10-5/℃
Force-frequency coefficient Kf：20×10-8
When the working temperature of the comb-shaped metal film temperature compensation crystal oscillator is changed, the generated thermal stress is as large as
Wherein: alpha is alpha1Is the thermal expansion coefficient of the quartz crystal; alpha is alpha2The coefficient of thermal expansion of the rectangular metal strip; a. the1Is the cross-sectional area of the quartz wafer; a. the2Is the cross-sectional area of a rectangular metal strip; e1Is the elastic modulus of the quartz crystal; e2The elastic modulus of the rectangular metal strip; t is the actual temperature; t is0Is the initial temperature.
From the above equation, it can be seen that the magnitude of the generated thermal stress becomes larger as the temperature change amount increases.
The magnitude of the force applied to the rectangular quartz crystal plate in the X-axis direction should be:
F＝nσA2＝-1.84×10-6n(T-T0)
wherein n is the number of the rectangular metal strips.
The working frequency of the crystal oscillator is calculated as follows:
the frequency of the AT crystal cutting oscillator changes along with the force, and the frequency is as follows:
wherein KfF is the working frequency of the crystal oscillator, and a is the length of the rectangular quartz crystal wafer.
When the slope of the power frequency characteristic slope is-0.3, the temperature compensation effect is best, so that the following steps are provided:
thus using ten rectangular metal strips, then
That is, the ten stress metal strips can make the resonance frequency of the crystal oscillator decrease (increase) by 0.3ppm at every increase (decrease) of 1 ℃, as shown in fig. 3.
The frequency variation with temperature after the completion of stress compensation is shown in FIG. 4, and the frequency difference is within 8 ppm.
The embodiments described in this specification are merely illustrative of implementations of the inventive concept and the scope of the present invention should not be considered limited to the specific forms set forth in the embodiments but rather by the equivalents thereof as may occur to those skilled in the art upon consideration of the present inventive concept.
Claims (3)
1. Temperature compensation crystal oscillator of comb-shaped metal film, including quartz chip (1), its characterized in that: the quartz crystal wafer (1) is a cuboid, the upper surface and the lower surface of the quartz crystal wafer (1) are rectangular, and two rectangular bosses are arranged on the upper surface; the upper surface and the lower surface of the quartz wafer (1) are respectively plated with a central electrode (2), one corner of the central electrode (2) is provided with an extension layer (3), the tail end of the extension layer (3) is connected with a glue point (5), and the glue point (5) is a leading-out end of the central electrode (2); setting the vertical axis direction of the upper surface of the quartz wafer (1) as an X axis, setting the horizontal axis direction as a Z axis, and setting the direction which is vertical to the upper surface of the quartz wafer (1) and passes through the intersection point of the X axis and the Z axis as a Y axis; the projections of the central electrodes (2) on the upper surface and the lower surface in the Y-axis direction are overlapped, and the extension layers (3) of the central electrodes (2) on the upper surface and the lower surface are respectively deviated to two sides of the X-axis; the comb-shaped metal film (4) is arranged along the X axis, two ends of the comb-shaped metal film (4) are respectively placed on two rectangular bosses on the upper surface of the quartz wafer (1), and the comb-shaped metal film (4) is separated from the central electrode (2); the comb-shaped metal film (4) is formed by arranging a plurality of metal strips at equal intervals, the metal strips are symmetrically arranged about a y axis, the length direction of the metal strips is consistent with the x axis direction of the rectangular quartz wafer, and the middle points of the metal strips are on the z axis; the coefficient of thermal expansion of the material of the metal strip is greater than that of the quartz wafer (1).
2. The temperature compensated crystal oscillator of comb-shaped metal films as claimed in claim 1, wherein: the cross section of the metal strip is rectangular.
3. The temperature compensated crystal oscillator of comb-shaped metal films as claimed in claim 1, wherein: the side length of the rectangular cross section of the metal strip in the Z-axis direction is smaller than that in the X-axis direction.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114749802A (en) * | 2022-04-26 | 2022-07-15 | 浙江雅晶电子有限公司 | Laser slitter edge removing machine |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114749802A (en) * | 2022-04-26 | 2022-07-15 | 浙江雅晶电子有限公司 | Laser slitter edge removing machine |
| CN114749802B (en) * | 2022-04-26 | 2024-03-12 | 浙江雅晶电子有限公司 | Laser slitter edge removing machine |
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