CN219436962U - Resonator electrode capable of reducing parasitism - Google Patents
Resonator electrode capable of reducing parasitism Download PDFInfo
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- CN219436962U CN219436962U CN202320915157.1U CN202320915157U CN219436962U CN 219436962 U CN219436962 U CN 219436962U CN 202320915157 U CN202320915157 U CN 202320915157U CN 219436962 U CN219436962 U CN 219436962U
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
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Abstract
本实用新型涉及一种电极,具体涉及一种降低寄生的谐振器电极,包括晶片本体、以及设置在晶片本体表面的电极层,所述的电极层采用椭圆型电极或多边形电极,优选地,所述晶片本体采用方形晶片,所述的电极层呈正六边形,设置在晶片本体表面的中心位置。本实用新型的谐振器电极可以降低谐振器的寄生振荡峰值,使之满足生产需要。
The utility model relates to an electrode, in particular to a resonator electrode for reducing parasitics, including a wafer body and an electrode layer arranged on the surface of the wafer body. The electrode layer adopts an elliptical electrode or a polygonal electrode. Preferably, the The wafer body adopts a square wafer, and the electrode layer is in the shape of a regular hexagon, and is arranged at the center of the surface of the wafer body. The resonator electrode of the utility model can reduce the parasitic oscillation peak value of the resonator, so as to meet the production requirement.
Description
技术领域technical field
本实用新型涉及一种电极,具体涉及一种降低寄生的谐振器电极。The utility model relates to an electrode, in particular to a resonator electrode for reducing parasitic.
背景技术Background technique
石英晶体谐振器在应用中,需要解决非预期振荡模式导致的寄生问题,在理论中是可以通过计算非预期振荡模式的耦合尺寸而避免的,但在实践中,因产品尺寸的小型化和理论模型的不准确,导致经常会有非预期寄生振荡模式的产生,尤其是石英谐振器用于过滤信号时,对寄生振荡的要求更高,利用现有理论设计的谐振器振子难以避免会产生寄生振荡。In the application of quartz crystal resonators, it is necessary to solve the parasitic problem caused by the unexpected oscillation mode. In theory, it can be avoided by calculating the coupling size of the unexpected oscillation mode, but in practice, due to the miniaturization of the product size and the theoretical The inaccuracy of the model often leads to the generation of unexpected parasitic oscillation modes, especially when quartz resonators are used to filter signals, the requirements for parasitic oscillations are higher, and it is difficult to avoid parasitic oscillations in resonator oscillators designed with existing theories .
石英谐振器的寄生振荡主要取决于石英谐振器谐振子(石英晶片)的外形尺寸(长、宽、厚),其如果与其它非预期振荡模式的尺寸相近或相等,就会在产品中形成耦合振荡,从而导致在非预期的频率点产生信号传输,导致行业内称之为寄生的信号传输通路。这在石英谐振器作为滤波使用中是致命的缺陷。在产品加工中,因传输信号的需要,需要在石英晶片的厚度方向蒸镀或溅射镀导电膜,作为电极,这层导电膜在设计谐振器时,需要等效为石英晶片的厚度,从而改变了谐振子的实际外形尺寸,会使谐振器产生了非预期的寄生振荡模式。The parasitic oscillation of a quartz resonator mainly depends on the dimensions (length, width, thickness) of the resonator (quartz wafer) of the quartz resonator. If it is similar to or equal to the size of other unintended oscillation modes, it will form a coupling in the product Oscillation, which leads to signal transmission at unexpected frequency points, leading to a signal transmission path called parasitic in the industry. This is a fatal flaw in the use of quartz resonators as filters. In product processing, due to the need for signal transmission, a conductive film needs to be evaporated or sputtered in the thickness direction of the quartz wafer as an electrode. When designing a resonator, this conductive film needs to be equivalent to the thickness of the quartz wafer, so that Changing the actual size of the resonator will cause the resonator to produce an unexpected spurious oscillation mode.
实用新型内容Utility model content
为解决上述问题,本实用新型提供了一种降低寄生的谐振器电极,可以降低谐振器的寄生振荡峰值,使之满足生产需要。In order to solve the above problems, the utility model provides a resonator electrode with reduced parasitics, which can reduce the parasitic oscillation peak value of the resonator to meet production needs.
为实现上述目的,本实用新型采取的技术方案为:In order to achieve the above object, the technical scheme that the utility model takes is:
一种降低寄生的谐振器电极,包括晶片本体、以及设置在晶片本体表面的电极层,所述的电极层采用椭圆型电极或多边形电极。A resonator electrode for reducing parasitics includes a wafer body and an electrode layer arranged on the surface of the wafer body, and the electrode layer adopts an elliptical electrode or a polygonal electrode.
进一步地,所述的电极层采用多边形电极,优选地,所述的电极层采用正六边形。Further, the electrode layer adopts a polygonal electrode, preferably, the electrode layer adopts a regular hexagon.
进一步地,所述晶片本体采用方形晶片,电极层设置在晶片本体表面的中心位置。Further, the wafer body adopts a square wafer, and the electrode layer is arranged at the center of the surface of the wafer body.
本实用新型的谐振器电极,通过电极层外形结构的优化,可以降低谐振器的寄生振荡峰值,使之满足生产需要。The resonator electrode of the utility model can reduce the parasitic oscillation peak value of the resonator through the optimization of the shape structure of the electrode layer, so as to meet the production requirement.
附图说明Description of drawings
通过阅读参照以下附图对非限制性实施例所作的详细描述,本实用新型的其它特征、目的和优点将会变得更明显:Other characteristics, objects and advantages of the present invention will become more apparent by reading the detailed description of non-limiting embodiments with reference to the following drawings:
图1为本实用新型一个具体实施例的结构示意图。Fig. 1 is a structural schematic diagram of a specific embodiment of the present invention.
图2为本实用新型另一个具体实施例的结构示意图。Fig. 2 is a structural schematic diagram of another specific embodiment of the present invention.
具体实施方式Detailed ways
下面将结合本实用新型实施例中的附图,对本实用新型实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本实用新型一部分实施例,而不是全部的实施例。基于本实用新型中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本实用新型保护的范围。The technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of them. example. Based on the embodiments of the present utility model, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the scope of protection of the present utility model.
实施例1Example 1
如图1所示,一种降低寄生的谐振器电极,包括晶片本体1、以及设置在晶片本体1表面的电极层2,所述的晶片本体1呈方形,所述的电极层2呈正六边形,位于晶片本体1的中心处。As shown in Figure 1, a resonator electrode for reducing parasitics includes a wafer body 1 and an electrode layer 2 arranged on the surface of the wafer body 1, the wafer body 1 is square, and the electrode layer 2 is a regular hexagon Shape, located at the center of the wafer body 1.
实施例2Example 2
如图2所示,一种降低寄生的谐振器电极,包括晶片本体1、以及设置在晶片本体1表面的电极层2,所述的晶片本体1呈椭圆形,所述的电极层2呈正六边形,位于晶片本体1的中心处。As shown in Figure 2, a resonator electrode that reduces parasitics includes a wafer body 1 and an electrode layer 2 disposed on the surface of the wafer body 1, the wafer body 1 is elliptical, and the electrode layer 2 is positive six. The polygon is located at the center of the wafer body 1.
如下表所示,为本实用新型实施例1、实施例2及常规电极的寄生振荡峰值的测试实验结果数据,可见,本实施例1和实施例2通过电极层外形结构的优化,可以降低谐振器的寄生振荡峰值,使之满足生产需要。As shown in the following table, it is the test result data of the parasitic oscillation peak value of the utility model embodiment 1, embodiment 2 and conventional electrodes. It can be seen that the embodiment 1 and embodiment 2 can reduce the resonance by optimizing the shape structure of the electrode layer The peak value of the parasitic oscillation of the device, so that it can meet the production needs.
以上显示和描述了本实用新型的基本原理、主要特征和本实用新型的优点。本行业的技术人员应该了解,本实用新型不受上述实施例的限制,上述实施例和说明书中描述的仅为本实用新型的优选例,并不用来限制本实用新型,在不脱离本实用新型精神和范围的前提下,本实用新型还会有各种变化和改进,这些变化和改进都落入要求保护的本实用新型范围内。本实用新型要求保护范围由所附的权利要求书及其等效物界定。The basic principles, main features and advantages of the present utility model have been shown and described above. Those skilled in the industry should understand that the utility model is not limited by the above-mentioned embodiments. The above-mentioned embodiments and descriptions are only preferred examples of the utility model, and are not used to limit the utility model. Without departing from the utility model Under the premise of the spirit and scope, the utility model also has various changes and improvements, and these changes and improvements all fall within the scope of the claimed utility model. The scope of protection required by the utility model is defined by the appended claims and their equivalents.
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Effective date of registration: 20250320 Address after: No.16, Wenhui East Road, Weicheng District, Xianyang City, Shaanxi Province Patentee after: Shaanxi Huajing Beichuan Electronic Technology Co.,Ltd. Country or region after: China Address before: No.16, Wenhui East Road, Weicheng District, Xianyang City, Shaanxi Province Patentee before: Shaanxi Huihua Electronic Technology Co.,Ltd. Country or region before: China |