CN219436962U

CN219436962U - Resonator electrode capable of reducing parasitism

Info

Publication number: CN219436962U
Application number: CN202320915157.1U
Authority: CN
Inventors: 郭军平; 徐向阳; 丁子阳; 刘永泉
Original assignee: Shaanxi Huihua Electronic Technology Co ltd
Current assignee: Shaanxi Huihua Electronic Technology Co ltd
Priority date: 2023-04-21
Filing date: 2023-04-21
Publication date: 2023-07-28
Anticipated expiration: 2033-04-21

Abstract

The utility model relates to an electrode, in particular to a resonator electrode for reducing parasitism, which comprises a wafer body and an electrode layer arranged on the surface of the wafer body, wherein the electrode layer adopts an elliptic electrode or a polygonal electrode, preferably, the wafer body adopts a square wafer, and the electrode layer is in a regular hexagon shape and is arranged at the center of the surface of the wafer body. The resonator electrode can reduce parasitic oscillation peak value of the resonator, so that the resonator electrode meets production requirements.

Description

Resonator electrode capable of reducing parasitism

Technical Field

The present utility model relates to an electrode, and more particularly to a resonator electrode with reduced parasitics.

Background

In application, the quartz crystal resonator needs to solve the parasitic problem caused by the unexpected oscillation mode, which can be avoided in theory by calculating the coupling size of the unexpected oscillation mode, but in practice, due to miniaturization of the product size and inaccuracy of the theoretical model, the unexpected parasitic oscillation mode is often generated, especially when the quartz resonator is used for filtering signals, the requirement on the parasitic oscillation is higher, and the parasitic oscillation is difficult to avoid by using the resonator oscillator designed by the prior theory.

The parasitic oscillations of a quartz resonator are mainly dependent on the physical dimensions (length, width, thickness) of the quartz resonator (quartz wafer), which if close to or equal to the dimensions of other undesired oscillation modes, form coupled oscillations in the product, resulting in signal transmission at undesired frequency points, which is referred to in the industry as parasitic signal transmission paths. This is a fatal defect in the use of quartz resonators as filtering. In product processing, a conductive film needs to be evaporated or sputtered in the thickness direction of a quartz wafer as an electrode due to the requirement of signal transmission, and the thickness of the conductive film needs to be equivalent to that of the quartz wafer when designing a resonator, so that the actual outline dimension of a resonator is changed, and an unexpected parasitic oscillation mode of the resonator can be generated.

Disclosure of Invention

In order to solve the problems, the utility model provides a resonator electrode capable of reducing parasitic oscillation peak value of a resonator so as to meet production requirements.

In order to achieve the above purpose, the technical scheme adopted by the utility model is as follows:

a resonator electrode for reducing parasitism comprises a wafer body and an electrode layer arranged on the surface of the wafer body, wherein the electrode layer adopts an elliptic electrode or a polygonal electrode.

Further, the electrode layer adopts a polygonal electrode, preferably, the electrode layer adopts a regular hexagon.

Further, the wafer body is a square wafer, and the electrode layer is arranged at the center of the surface of the wafer body.

According to the resonator electrode, through optimization of the outer shape structure of the electrode layer, parasitic oscillation peak values of the resonator can be reduced, so that the resonator electrode meets production requirements.

Drawings

Other features, objects and advantages of the present utility model will become more apparent upon reading of the detailed description of non-limiting embodiments, given with reference to the accompanying drawings in which:

fig. 1 is a schematic structural diagram of an embodiment of the present utility model.

Fig. 2 is a schematic structural diagram of another embodiment of the present utility model.

Detailed Description

The following description of the embodiments of the present utility model will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present utility model, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the utility model without making any inventive effort, are intended to be within the scope of the utility model.

Example 1

As shown in fig. 1, a resonator electrode for reducing parasitic comprises a wafer body 1 and an electrode layer 2 arranged on the surface of the wafer body 1, wherein the wafer body 1 is square, and the electrode layer 2 is in a regular hexagon shape and is positioned at the center of the wafer body 1.

Example 2

As shown in fig. 2, a resonator electrode for reducing parasitic comprises a wafer body 1 and an electrode layer 2 arranged on the surface of the wafer body 1, wherein the wafer body 1 is elliptical, and the electrode layer 2 is in a regular hexagon shape and is positioned at the center of the wafer body 1.

As shown in the following table, test experimental results of parasitic oscillation peaks of the embodiment 1, the embodiment 2 and the conventional electrode of the present utility model show that the parasitic oscillation peak of the resonator can be reduced to meet the production requirement by optimizing the external structure of the electrode layer in the embodiment 1 and the embodiment 2.

The foregoing has shown and described the basic principles, principal features and advantages of the utility model. It will be understood by those skilled in the art that the present utility model is not limited to the above-described embodiments, and that the above-described embodiments and descriptions are only preferred embodiments of the present utility model, and are not intended to limit the utility model, and that various changes and modifications may be made therein without departing from the spirit and scope of the utility model as claimed. The scope of the utility model is defined by the appended claims and equivalents thereof.

Claims

1. A parasitic resonator electrode comprising a wafer body (1) and an electrode layer (2) arranged on the surface of the wafer body (1), characterized in that: the electrode layer (2) adopts an elliptic electrode or a polygonal electrode.

2. A parasitic reduced resonator electrode as claimed in claim 1, wherein: the electrode layer (2) adopts polygonal electrodes.

3. A parasitic reduced resonator electrode as claimed in claim 2, wherein: the electrode layer (2) adopts a regular hexagon.

4. A parasitic reduced resonator electrode as claimed in claim 3, wherein: the wafer body (1) adopts a square wafer, and the electrode layer (2) is arranged at the center of the surface of the wafer body (1).