CN114068764A - Method for improving stability of ZnO nanowire ultraviolet detector through nitrogen packaging - Google Patents
Method for improving stability of ZnO nanowire ultraviolet detector through nitrogen packaging Download PDFInfo
- Publication number
- CN114068764A CN114068764A CN202111448069.7A CN202111448069A CN114068764A CN 114068764 A CN114068764 A CN 114068764A CN 202111448069 A CN202111448069 A CN 202111448069A CN 114068764 A CN114068764 A CN 114068764A
- Authority
- CN
- China
- Prior art keywords
- metal tube
- ultraviolet detector
- zno nanowire
- base
- tube base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002070 nanowire Substances 0.000 title claims abstract description 69
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 title claims abstract description 60
- 229910052757 nitrogen Inorganic materials 0.000 title claims abstract description 30
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 21
- 238000000034 method Methods 0.000 title claims abstract description 20
- 239000002184 metal Substances 0.000 claims abstract description 118
- 229910052751 metal Inorganic materials 0.000 claims abstract description 118
- 238000003466 welding Methods 0.000 claims abstract description 42
- 238000004146 energy storage Methods 0.000 claims abstract description 23
- 239000000853 adhesive Substances 0.000 claims abstract description 22
- 230000001070 adhesive effect Effects 0.000 claims abstract description 22
- 239000007788 liquid Substances 0.000 claims abstract description 22
- 238000005538 encapsulation Methods 0.000 claims abstract description 8
- 238000005516 engineering process Methods 0.000 claims abstract description 8
- 238000007789 sealing Methods 0.000 claims abstract description 6
- 238000000825 ultraviolet detection Methods 0.000 claims abstract description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 28
- 238000001035 drying Methods 0.000 claims description 25
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 11
- 238000012360 testing method Methods 0.000 claims description 11
- SQGYOTSLMSWVJD-UHFFFAOYSA-N silver(1+) nitrate Chemical compound [Ag+].[O-]N(=O)=O SQGYOTSLMSWVJD-UHFFFAOYSA-N 0.000 claims description 10
- 238000004140 cleaning Methods 0.000 claims description 8
- 239000011248 coating agent Substances 0.000 claims description 8
- 238000000576 coating method Methods 0.000 claims description 8
- 238000012986 modification Methods 0.000 claims description 8
- 230000004048 modification Effects 0.000 claims description 7
- 239000001267 polyvinylpyrrolidone Substances 0.000 claims description 6
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 claims description 6
- 229920000036 polyvinylpyrrolidone Polymers 0.000 claims description 6
- 229910001961 silver nitrate Inorganic materials 0.000 claims description 5
- 238000011049 filling Methods 0.000 claims description 4
- 239000004745 nonwoven fabric Substances 0.000 claims description 4
- 238000007664 blowing Methods 0.000 claims description 3
- 238000003825 pressing Methods 0.000 claims description 3
- 238000002791 soaking Methods 0.000 claims description 3
- 238000003756 stirring Methods 0.000 claims description 3
- 239000012780 transparent material Substances 0.000 claims description 3
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 2
- 239000012790 adhesive layer Substances 0.000 claims 3
- 239000002086 nanomaterial Substances 0.000 abstract description 2
- 230000007774 longterm Effects 0.000 abstract 1
- 238000001514 detection method Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 238000005286 illumination Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 238000012858 packaging process Methods 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 101710134784 Agnoprotein Proteins 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 238000007600 charging Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000004100 electronic packaging Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000004519 grease Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000009516 primary packaging Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
The invention relates to the technical field of ultraviolet detection and the technical field of nano materials, in particular to a method for improving the stability of a ZnO nanowire ultraviolet detector by nitrogen encapsulation, which comprises the following steps: fixing the ZnO nanowire ultraviolet detector on a metal tube base by using a conductive adhesive, and then modifying by using a modifying liquid; putting the ZnO nanowire ultraviolet detector fixed on the metal tube base into energy storage welding equipment filled with dry nitrogen; and packaging the metal pipe cap and the metal pipe base by using an energy storage welding technology, and sealing nitrogen between the metal pipe cap and the metal pipe base. Aiming at the problem of surface stability of ZnO nanowires, the invention adopts energy storage welding to weld N2Sealed in the packaging structure of the ultraviolet detector, not only ensures the high gain characteristic of the ZnO nanowire ultraviolet detector, but also improves the long-term stability of the device performance。
Description
The application is that the application date is 2018, the application number is 201810013522.3, and the name of the application is that the ZnO nanowire ultraviolet detector is arranged in N2Division application of encapsulation method under atmosphere.
Technical Field
The invention relates to the technical field of ultraviolet detection and the technical field of nano materials, in particular to a method for improving the stability of a ZnO nanowire ultraviolet detector by nitrogen encapsulation.
Background
The ultraviolet photoelectric detector is a photoelectric device for detecting ultraviolet radiation, and is widely applied to the fields of aerospace, environmental monitoring, communication, automotive electronics, oil exploration and the like. With the development of science and technology, the material performance is continuously improved, the structural strength is also continuously improved, and the requirements on the reliability and the stability of the material applied in extreme environments for a long time are higher and higher. The ultraviolet detector based on ZnO has many advantages, such as small background noise, high responsiveness, high internal gain, easy manufacture and the like. However, the high stability involved in the practical application of the devices after the devices are manufactured is only reported, and because the reliability and stability of the ultraviolet detector depend on the stability of the surface characteristics of the nanowires, how to maintain the stability of the surface characteristics of the ultraviolet detector is a key problem for the ZnO nano ultraviolet detector to be really put into practical use.
In the IC industry, the IC design, IC manufacture, IC packaging and testing aspects that have been developed constitute three major pillars of the IC industry, and with the miniaturization and high performance of electronic systems, the influence of electronic packaging on the systems becomes as important as the chip design and manufacture aspects. Because many parameters of semiconductor devices and circuits, and the stability and reliability of the devices are directly and closely related to the surface state of the semiconductor, the microelectronic package can provide firm and reliable mechanical support for a chip and can adapt to the change of various working environments and conditions, and the microelectronic package not only directly influences the electrical property, the thermal property, the optical property and the mechanical property of the devices, influences the reliability and the cost of the devices, but also determines the miniaturization, the reliability and the cost of an electronic whole system to a great extent.
The ZnO nanowire has active surface properties, so that the device has high sensitivity, but the performance stability of the device is poor, the manufactured ultraviolet detector is exposed in air, the surface properties of the nanowire are easily affected due to surface adsorption and bonding of oxygen and water vapor, and the device properties greatly depend on the surface properties of the nanowire, so that the detector must be isolated from the external environment through packaging. At present, the conventional packaging methods for ZnO nanowire devices are surface passivation and organic spin coating. In both methods, a solid substance with inert function is coated on the surface of the nano device to achieve the isolation function from the external environment. However, passivation needs to be performed at a high temperature, which changes the characteristics of the surface of the nanowire, and isolation of solid substances affects the transmission of ultraviolet rays, thereby affecting the sensitivity of the detection device.
Disclosure of Invention
In order to solve the problems, the invention adopts inert gas N2The ZnO nanowire ultraviolet photoelectric detector is packaged, and the problems of reliability and stability of the ZnO nanowire ultraviolet photoelectric detector are solved.
The invention provides a method for improving the stability of a ZnO nanowire ultraviolet detector by nitrogen encapsulation, which is characterized by comprising the following steps of:
fixing the ZnO nanowire ultraviolet detector on a metal tube base by using a conductive adhesive, and then modifying by using a modifying liquid;
putting the ZnO nanowire ultraviolet detector fixed on the metal tube base into energy storage welding equipment filled with dry nitrogen;
and packaging the metal pipe cap and the metal pipe base by using an energy storage welding technology, and sealing nitrogen between the metal pipe cap and the metal pipe base.
Preferably, the method for improving the stability of the ZnO nanowire ultraviolet detector by nitrogen encapsulation comprises the following steps:
a. cleaning the metal pipe cap and the metal pipe base, and drying after cleaning; a window made of transparent material is arranged at the top end of the metal tube base;
b. fixing the ZnO nanowire ultraviolet detector in the middle of the metal tube base by using conductive adhesive, and performing pressure welding;
c. dropping the modified liquid on the ZnO nanowire ultraviolet detector, completely covering the ZnO nanowire ultraviolet detector, and placing the metal tube base in an oven for baking;
d. in N2In the atmosphere, packaging the metal tube cap dried in the step a on the metal tube base baked in the step c by adopting an energy storage welding technology, and sealing nitrogen between the metal tube cap and the metal tube base;
the step a comprises the following steps:
(a1) putting the metal pipe cap and the metal pipe base into a container, pouring absolute ethyl alcohol into the container to enable the absolute ethyl alcohol to completely submerge the metal pipe cap and the metal pipe base, and soaking the metal pipe cap and the metal pipe base for 3-5 min;
(a2) cleaning the container in an ultrasonic cleaning machine for 5 min;
(a3) wrapping the cleaned metal tube cap and metal tube base in non-woven fabric, and using N2Blowing for 1min by using a gun, then putting the gun and the high-low temperature environment test box together for drying, and taking out the dried gun and the high-low temperature environment test box after drying, wherein the drying temperature is 60-70 ℃, and the drying time is 5 min;
the step b comprises the following steps:
(b1) b, placing the metal tube base dried in the step a on a tray;
(b2) coating conductive adhesive on the central position of the metal tube base by using a dropper to form a conductive adhesive coating;
(b3) pressing the ZnO nanowire ultraviolet detector on the conductive adhesive coating, and placing the ZnO nanowire ultraviolet detector into a nitrogen cabinet for curing, wherein the curing temperature is room temperature, and the curing time is 24 hours;
(b4) welding the cured ZnO nanowire ultraviolet detector on a pressure welding point of a metal tube base by using one end of a first gold wire, and welding the other end of the first gold wire on the ZnO nanowire ultraviolet detector; one end of a second gold wire is welded on a pressure welding point of the metal tube base, and the other end of the second gold wire is welded on the ZnO nanowire ultraviolet detector;
the step c comprises the following steps:
(c1) dissolving silver nitrate and polyvinylpyrrolidone in absolute ethyl alcohol, and uniformly stirring by using a magnetic stirrer to prepare a modification liquid; 0.2g polyvinylpyrrolidone and 50mL absolute ethanol per 0.17g silver nitrate.
(c2) Dripping the modified liquid on the ZnO nanowire ultraviolet detector by using a dropper to completely cover the ZnO nanowire ultraviolet detector;
(c3) putting the metal tube base dripped with the modifying liquid in the step (c2) into an oven for drying, and taking out the metal tube base after drying, wherein the drying temperature of the oven is 100 ℃, and the drying time is 3-4 min;
the step d comprises the following steps:
(d1) opening the energy storage welding equipment and filling dry nitrogen;
(d2) and taking the modified device into energy storage welding equipment to finish energy storage welding packaging, so that the metal tube cap and the metal tube base are tightly connected together, and the ZnO nanowire ultraviolet detection device is packaged in the cavities of the metal tube cap and the metal tube base.
The invention also provides a ZnO nanowire ultraviolet detector N2The packaging structure is characterized by comprising a metal tube base 1, a pressure welding point 2, a conductive adhesive 3, a ZnO nanowire ultraviolet detector 4, a metal tube cap 5, a modification liquid 6, a first gold wire 7 and a second gold wire 8;
the pressure welding points 2 are positioned on the metal pipe base 1;
the conductive adhesive 3 is coated at the central position of the metal tube base 1;
the ZnO nanowire ultraviolet detector 4 is fixed on the conductive adhesive 3;
the modifying liquid 6 completely covers the ZnO nanowire ultraviolet detector 4;
one end of the first gold wire 7 is welded on the pressure welding point 2, and the other end of the first gold wire is welded on the ZnO nanowire ultraviolet detector 4;
one end of the second gold wire 8 is welded at any position on the metal tube seat without conductive adhesive, and the other end is welded at the other end of the ZnO nanowire ultraviolet detector 4;
the metal pipe cap 5 is connected with the metal pipe base 1;
and nitrogen is packaged between the metal tube cap 5 and the metal tube base 1.
After the process steps are adopted, the invention has the beneficial effects that: the ZnO nanowire ultraviolet photoelectric detector works under the protection of a nitrogen environment by using an energy storage welding technology, the sealing property is good, the firmness is good, the gain characteristic of the detector is not influenced, the stability of the detector in long-time working can be kept, and the service life of the detector is prolonged. The conductive adhesive is used as a material for adhering the device and the metal tube seat, and can be cured at room temperature without a thermosetting process, so that the possibility of failure of the device due to high temperature is avoided; can be compatible with ZnO nanowire surface modification technology, and improves the gain performance of the device.
The invention utilizes metal packaging in the primary packaging of the integrated circuit and aims at the situation that the ZnO nanowire ultraviolet photoelectric detector is positioned at N2And (3) packaging under the atmosphere, wherein a fixed metal tube base with a window and a tube cap are adopted, and an energy storage welding process and a modifying liquid are simultaneously utilized to ensure the high gain characteristic of the ZnO nanowire ultraviolet detector and the integral stability of the packaged device.
Drawings
FIG. 1 shows a ZnO nanowire ultraviolet detector N according to the present invention2A cap in the package structure;
FIG. 2 shows a ZnO nanowire ultraviolet detector N in the invention2A top view of the modified tube seat in the packaging structure;
FIG. 3 shows a ZnO nanowire ultraviolet detector N according to the present invention2A flow diagram of a packaging process;
FIG. 4 shows the results of the gain test after packaging 10 devices in example 1;
FIG. 5 shows the results of 7 gain tests over 9 months for 1 device in example 2;
in the figure: 1-metal tube base 2-pressure welding point 3-conductive adhesive 4-detector 5-metal tube cap 6-modification liquid 7-first gold wire 8-second gold wire.
Detailed Description
In order to make the packaging structure of the present invention clearer, the method for improving the stability of the ZnO nanowire ultraviolet detector by nitrogen packaging according to the present invention is further described in detail with reference to the accompanying drawings and specific embodiments, but the present invention is not limited to the following embodiments.
Example one
As shown in fig. 1, fig. 2 and fig. 3, the method for improving the stability of the ZnO nanowire ultraviolet detector by nitrogen encapsulation comprises the following specific steps:
(1) putting a metal pipe cap (provided with a skylight made of transparent materials) 5 and a metal pipe base 1 into a big beaker, pouring absolute ethyl alcohol into the beaker, enabling the absolute ethyl alcohol to completely submerge the metal pipe cap 5 and the metal pipe base 1, soaking the metal pipe cap 5 and the metal pipe base 1 for 3-5 min, then putting the beaker into an ultrasonic cleaner for cleaning, wherein the cleaning time is 5min, and after residual metal dust and grease are cleaned off, wrapping the cleaned metal pipe cap 5 and the metal pipe base 1 into non-woven fabrics, and using N to wrap the non-woven fabrics2And blowing for 1min by using a gun, then putting the gun and the test box together into a high-low temperature environment test box for drying, and taking out the dried product after drying, wherein the drying temperature is 60-70 ℃, and the drying time is 5 min.
(2) The metal tube base 1 obtained in the step (1) is placed on a suitable tray, and the tray is used for stably placing the metal tube base and is convenient for subsequent processes. Firstly, a dropper is used for coating a proper amount of conductive adhesive 3 on the central position of the metal tube base 1, the area of the coated conductive adhesive 3 needs to exceed or be close to the area of the detection device 4, but the coated conductive adhesive can not contact the pressure welding point 2 on the metal tube base 1. Pressing detecting device 4 gently with tweezers on conducting resin coating 3, can not be too big hard, prevent to damage the device, then will be stained with detecting device 4's tubular metal resonator base 1 and put into the curing process together with the tray in the nitrogen cabinet together, curing temperature is the room temperature, and curing time is 24h, and the conducting resin carries out the normal atmospheric temperature solidification, can avoid the influence of high temperature to detecting device 4 performance, prevents that the device from becoming invalid. And (3) carrying out a pressure welding process on the solidified detecting device 4, connecting one end of the detecting device 4 into the pressure welding point 2 on the metal tube base 1 by using a first gold wire 7, and then connecting the other end of the detecting device 4 to any position of the metal tube base which is not coated with the conductive adhesive by using a second gold wire 8, wherein the position is preferably that the first gold wire 7 and the second gold wire 8 do not interfere with each other.
(3) First, 0.17g of silver nitrate (AgNO) was weighed3) And 0.4g of polyvinylpyrrolidone (PVP) in 100mL of absolute ethanol, and stirring the mixture uniformly by using a magnetic stirrer to prepare a modifying solution. And (3) dripping the prepared modified liquid on the metal tube base 1 obtained in the step (2) by using a dropper, wherein the amount of the modified liquid is required to completely cover the detection device 4 so as to ensure that the modified liquid can act and ensure the uniformity of the characteristics of the detection device 4. The metal tube base 1 with the decorative liquid dripped is placed on a tray and is placed in an oven for drying, the metal tube base is taken out after being dried, the temperature of the oven is 100 ℃, the drying time is 3min, the purpose of decorating and drying the detector 4 is to improve the sensitivity of the detector 4 to ultraviolet light, the performance is characterized by optical gain, the surface of the detector 4 can turn yellow after being dried, and the decorative liquid is shown to play a role.
(4) And opening the energy storage welding equipment, wherein the energy storage welding equipment is an HA-8 system, and filling dry nitrogen into the equipment. Putting the detection device 4 obtained in the step (3) into energy storage welding equipment, enabling the metal tube base 1 and the metal tube cap 2 to be tightly connected together through the charging and discharging process of an energy storage capacitor in the equipment, filling dry nitrogen into the inner space of the metal tube base 1 and the inner space of the metal tube cap at the moment, and completing the N of the ZnO nanowire ultraviolet detector2And (5) packaging process flow. After the four steps, 10 devices which are packaged by the nitrogen energy storage welding are respectively tested, under the same ultraviolet illumination, the dark current, the photocurrent and the optical gain parameters of each device are obtained, the test results are shown in table 1 and fig. 4, and the gain of the packaged 10 devices is not lower than the 4-power magnitude of 10.
Table 1 example 1 testing of probing device performance parameters under the same uv illumination
Example 2:
after the four steps of the embodiment 1, the device 3 which is packaged by the nitrogen energy storage welding is tested, the device is tested for 7 times in 9 months under the same ultraviolet illumination, and the service life characterization result of the detection device is shown in fig. 5.
The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (3)
1. A method for improving the stability of a ZnO nanowire ultraviolet detector by nitrogen encapsulation is characterized by comprising the following steps:
fixing the ZnO nanowire ultraviolet detector on a metal tube base by using a conductive adhesive, and then modifying by using a modifying liquid;
putting the ZnO nanowire ultraviolet detector fixed on the metal tube base into energy storage welding equipment filled with dry nitrogen;
and packaging the metal pipe cap and the metal pipe base by using an energy storage welding technology, and sealing nitrogen between the metal pipe cap and the metal pipe base.
2. The method for improving the stability of the ZnO nanowire ultraviolet detector by nitrogen encapsulation according to claim 1, characterized by comprising the following steps:
a. cleaning the metal pipe cap and the metal pipe base, and drying after cleaning; a window made of transparent material is arranged at the top end of the metal tube base;
b. fixing the ZnO nanowire ultraviolet detector in the middle of the metal tube base dried in the step a by using conductive adhesive, and performing pressure welding;
c. dropping the modified liquid on the ZnO nanowire ultraviolet detector, completely covering the ZnO nanowire ultraviolet detector, and placing the metal tube base in an oven for baking;
d. in N2In the atmosphere, packaging the metal tube cap dried in the step a on the metal tube base baked in the step c by adopting an energy storage welding technology, and sealing nitrogen between the metal tube cap and the metal tube base;
the step a comprises the following steps:
(a1) putting the metal pipe cap and the metal pipe base into a container, pouring absolute ethyl alcohol into the container to enable the absolute ethyl alcohol to completely submerge the metal pipe cap and the metal pipe base, and soaking the metal pipe cap and the metal pipe base for 3-5 min;
(a2) cleaning the container in an ultrasonic cleaning machine for 5 min;
(a3) wrapping the cleaned metal tube cap and metal tube base in non-woven fabric, and using N2Blowing for 1min by using a gun, then putting the gun and the high-low temperature environment test box together for drying, and taking out the dried gun and the high-low temperature environment test box after drying, wherein the drying temperature is 60-70 ℃, and the drying time is 5 min;
the step b comprises the following steps:
(b1) b, placing the metal tube base dried in the step a on a tray;
(b2) coating conductive adhesive on the central position of the metal tube base by using a dropper to form a conductive adhesive coating;
(b3) pressing the ZnO nanowire ultraviolet detector on the conductive adhesive coating, and placing the ZnO nanowire ultraviolet detector into a nitrogen cabinet for curing, wherein the curing temperature is room temperature, and the curing time is 24 hours;
(b4) welding the cured ZnO nanowire ultraviolet detector on a pressure welding point of a metal tube base by using one end of a first gold wire, and welding the other end of the first gold wire on the ZnO nanowire ultraviolet detector; one end of a second gold wire is welded on a pressure welding point of the metal tube base, and the other end of the second gold wire is welded on the ZnO nanowire ultraviolet detector;
the step c comprises the following steps:
(c1) dissolving silver nitrate and polyvinylpyrrolidone in absolute ethyl alcohol, and uniformly stirring by using a magnetic stirrer to prepare a modification liquid; 0.2g polyvinylpyrrolidone and 50mL absolute ethanol per 0.17g silver nitrate.
(c2) Dripping the modified liquid on the ZnO nanowire ultraviolet detector by using a dropper to completely cover the ZnO nanowire ultraviolet detector;
(c3) putting the metal tube base dripped with the modifying liquid in the step (c2) into an oven for drying, and taking out the metal tube base after drying, wherein the drying temperature of the oven is 100 ℃, and the drying time is 3-4 min;
the step d comprises the following steps:
(d1) opening the energy storage welding equipment and filling dry nitrogen;
(d2) and taking the modified device into energy storage welding equipment to finish energy storage welding packaging, so that the metal tube cap and the metal tube base are tightly connected together, and the ZnO nanowire ultraviolet detection device is packaged in the cavities of the metal tube cap and the metal tube base.
3. ZnO nanowire ultraviolet detector N2The packaging structure is characterized by comprising a metal tube base (1), a pressure welding point (2), a conductive adhesive layer (3), a ZnO nanowire ultraviolet detector (4), a metal tube cap (5), a modification liquid (6), a first gold wire (7) and a second gold wire (8);
the pressure welding points (2) are positioned on the metal tube base (1);
the conductive adhesive layer (3) is coated at the central position of the metal tube base (1);
the ZnO nanowire ultraviolet detector (4) is fixed on the conductive adhesive layer (3);
the modifying liquid (6) completely covers the ZnO nanowire ultraviolet detector (4);
one end of the first gold wire (7) is welded on the pressure welding point (2), and the other end of the first gold wire is welded on the ZnO nanowire ultraviolet detector (4);
one end of the second gold wire (8) is welded at any position without conductive adhesive on the metal tube seat, and the other end is welded at the other end of the ZnO nanowire ultraviolet detector (4);
the metal pipe cap (5) is connected with the metal pipe base (1);
and nitrogen is packaged between the metal pipe cap (5) and the metal pipe base (1).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111448069.7A CN114068764A (en) | 2018-01-07 | 2018-01-07 | Method for improving stability of ZnO nanowire ultraviolet detector through nitrogen packaging |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810013522.3A CN108231955A (en) | 2018-01-07 | 2018-01-07 | A kind of ZnO nano-wire ultraviolet detector is in N2Packaging method under atmosphere |
| CN202111448069.7A CN114068764A (en) | 2018-01-07 | 2018-01-07 | Method for improving stability of ZnO nanowire ultraviolet detector through nitrogen packaging |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810013522.3A Division CN108231955A (en) | 2018-01-07 | 2018-01-07 | A kind of ZnO nano-wire ultraviolet detector is in N2Packaging method under atmosphere |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN114068764A true CN114068764A (en) | 2022-02-18 |
Family
ID=62643133
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810013522.3A Pending CN108231955A (en) | 2018-01-07 | 2018-01-07 | A kind of ZnO nano-wire ultraviolet detector is in N2Packaging method under atmosphere |
| CN202111448069.7A Pending CN114068764A (en) | 2018-01-07 | 2018-01-07 | Method for improving stability of ZnO nanowire ultraviolet detector through nitrogen packaging |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810013522.3A Pending CN108231955A (en) | 2018-01-07 | 2018-01-07 | A kind of ZnO nano-wire ultraviolet detector is in N2Packaging method under atmosphere |
Country Status (1)
| Country | Link |
|---|---|
| CN (2) | CN108231955A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109616529A (en) * | 2018-12-07 | 2019-04-12 | 中国科学院长春光学精密机械与物理研究所 | A kind of ultraviolet detector and preparation method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102359821A (en) * | 2011-08-23 | 2012-02-22 | 郑州炜盛电子科技有限公司 | Pyroelectric infrared-sensitive element and pyroelectric infrared detector |
| CN105070733A (en) * | 2015-07-28 | 2015-11-18 | 昆明物理研究所 | Airtight packaging method of non-refrigeration infrared focal plane detector |
| CN105445871A (en) * | 2015-12-28 | 2016-03-30 | 中国电子科技集团公司第八研究所 | Ultra-wide temperature active optical device packaging process |
| CN106768389A (en) * | 2017-01-16 | 2017-05-31 | 北立传感器技术（武汉）有限公司 | One kind is based on current type relaxor ferroelectric monocrystal pyroelectric detector and preparation method thereof |
| CN106932104A (en) * | 2015-12-30 | 2017-07-07 | 上海新微技术研发中心有限公司 | Double-element flame detection sensor |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102148281B (en) * | 2010-02-05 | 2012-09-05 | 中国科学院物理研究所 | Ultraviolet light detector with fast response, high sensitivity and low noise |
| CN102983245A (en) * | 2011-09-06 | 2013-03-20 | 青岛杰生电气有限公司 | Packaging structure for ultraviolet luminous diode |
-
2018
- 2018-01-07 CN CN201810013522.3A patent/CN108231955A/en active Pending
- 2018-01-07 CN CN202111448069.7A patent/CN114068764A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102359821A (en) * | 2011-08-23 | 2012-02-22 | 郑州炜盛电子科技有限公司 | Pyroelectric infrared-sensitive element and pyroelectric infrared detector |
| CN105070733A (en) * | 2015-07-28 | 2015-11-18 | 昆明物理研究所 | Airtight packaging method of non-refrigeration infrared focal plane detector |
| CN105445871A (en) * | 2015-12-28 | 2016-03-30 | 中国电子科技集团公司第八研究所 | Ultra-wide temperature active optical device packaging process |
| CN106932104A (en) * | 2015-12-30 | 2017-07-07 | 上海新微技术研发中心有限公司 | Double-element flame detection sensor |
| CN106768389A (en) * | 2017-01-16 | 2017-05-31 | 北立传感器技术（武汉）有限公司 | One kind is based on current type relaxor ferroelectric monocrystal pyroelectric detector and preparation method thereof |
Non-Patent Citations (1)
| Title |
|---|
| 孙建明: "高取向性Zn0纳米阵列紫外探测器制备与性能研究", 《工程科技Ⅰ辑》, pages 43 - 44 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN108231955A (en) | 2018-06-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR101944128B1 (en) | Method for manufacturing a sensor chip comprising a device for testing it | |
| US4426769A (en) | Moisture getter for integrated circuit packages | |
| CN107144609A (en) | The manufacture method of moisture sensor and the moisture sensor manufactured using this method | |
| Emami et al. | Development of hermetic glass frit encapsulation for perovskite solar cells | |
| CN105236343A (en) | Dielectric isolation type pressure sensor encapsulating structure | |
| US11435310B2 (en) | Humidity sensor | |
| CN114068764A (en) | Method for improving stability of ZnO nanowire ultraviolet detector through nitrogen packaging | |
| WO2013170648A1 (en) | Varistor and production method | |
| CN103943713A (en) | Quantum dot and graphene photosensitive field-effect transistor and manufacturing method thereof | |
| CN111628088A (en) | Simple perovskite solar cell packaging structure and manufacturing method thereof | |
| AU2020103402A4 (en) | A packaging method of ZnO nanowire ultraviolet detector in N2 atmosphere | |
| CN104283406B (en) | MCM packaging type power module and method for manufacturing MCM packaging type power module | |
| CN110095522B (en) | Organic transistor chemical sensor for monitoring lithium battery electrolyte and preparation method thereof | |
| CN109580077B (en) | Pressure sensor structure and manufacturing method thereof | |
| CN107481944B (en) | A kind of semiconductor devices hybrid package method | |
| KR101613412B1 (en) | Method for manufacturing wafer Level Packaging Device | |
| CN204302142U (en) | A kind of sensor construction with selective absorption QCM | |
| Reese et al. | A simple miniature controlled-atmosphere chamber for optoelectronic characterizations | |
| CN106510678B (en) | Folded nerve electrode array system and preparation method thereof | |
| CN107727246A (en) | The infrared ray sensor and its method for packing of high vacuum | |
| CN110987218A (en) | High-temperature-resistant and quick-response thin film platinum resistance sensitive element and manufacturing method thereof | |
| CN111137850B (en) | Method for realizing low-stress sensitive structure surface mounting technology | |
| CN206321348U (en) | A kind of pyroelectric infrared sensor | |
| CN104112676B (en) | SIP lead-tin packaging method and packaging structure thereof | |
| CN204103744U (en) | A kind of power module of MCM encapsulation |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |