CN114062831B - Fault self-detection method and device suitable for single photon detector - Google Patents
Fault self-detection method and device suitable for single photon detector Download PDFInfo
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Abstract
The invention discloses a fault self-detection method and a fault self-detection device suitable for a single photon detector, wherein the fault self-detection method comprises a picosecond pulse light source, a variable optical attenuator, a sampling circuit, a power supply topology protection circuit and an upper computer; the picosecond pulse light source generates a light pulse signal and an electric signal which is homologous with the light pulse, the electric signal is used as a trigger signal of the single photon detector, and the single photon light pulse is obtained after the obtained light pulse signal is processed by the adjustable optical attenuator and is used as a test signal of the single photon detector; the power supply topology protection circuit is used for realizing continuous reliability process detection of a power supply module in the single photon detector, and the sampling circuit acquires a sampling value of a part to be detected of the single photon detector; the upper computer is used for setting a test procedure instruction, reading test data, analyzing the data and generating a test report. According to the scheme, a plurality of circuit structures and components of the single photon detector are detected through an automatic testing process, and the fault detection efficiency and the positioning accuracy are obviously improved.
Description
Technical Field
The invention relates to the technical field of single-photon detector performance test and fault diagnosis, in particular to a fault self-detection method and a fault self-detection device suitable for a single-photon detector.
Background
Single photon detectors are the most sensitive devices to perform low-light detection. Besides being used as a core device in quantum communication, the single photon detector has extremely wide application in many fields. Such as basic quantum mechanical research, star observation in astronomy, radar in meteorology, single molecule detection in life science, fiber optic detection in communication, radiometry in metrology, hyperspectral imaging, etc. Since the birth of the 20 th century, quantum mechanics has rapidly developed, greatly changing physical appearance. Information security has been highly valued since ancient times. At present, the fierce international competition in the field of quantum communication has evolved into the competition between key devices and key technology research and development, in the research and development of the key devices, a single-photon detector is a device in a core position, and the performance of a quantum communication system is directly restricted by parameter indexes of the single-photon detector.
For a single-photon detector, a plurality of important performance indexes are provided for judging the performance, such as detection efficiency, dark counting, rear pulse probability, maximum counting rate and time resolution. The performance of the single photon detector is closely related to the performance of key devices. For example, chinese patent with publication number CN106197692B, entitled single photon detector testing device and testing method thereof, discloses a single photon detector testing device, which includes a main control circuit, a narrow pulse light source, and an upper computer, and mainly tests the performance (dark count, back pulse, detection efficiency) of the single photon detector by means of positive coincidence and negative coincidence, and tests the performance of different single photon detectors by replacing different single photon detectors, and the device is mainly characterized in performance test, and cannot perform fault diagnosis and fault location on various circuit components inside the single photon detector; as another example, chinese patent application with publication number CN101387658A discloses a measuring circuit and method for automatically testing avalanche voltage value of avalanche photodiode, which can obtain the bias voltage of avalanche diode by designing a voltage regulating circuit capable of accurately modulating, and performing bias voltage and bias current tests on avalanche diode through accurate voltage regulation, thereby greatly improving the precision and efficiency of obtaining bias voltage; however, the performance parameters of the avalanche diode are not detected, and it cannot be determined whether the avalanche diode is faulty or not.
In the existing scheme, when the performance of the single-photon detector is reduced or a fault occurs, operation and maintenance personnel are required to perform fault location according to the abnormity, the location time and the location result are closely related to the working experience of the operation and maintenance personnel, and in most cases, the fault reason can only be preliminarily analyzed according to the abnormity location, the fault root cause cannot be confirmed, and the abnormal data cannot be quantized and displayed. In addition, in order not to influence the use of a client, the client can select to replace a single photon detector with good performance on site, and the single photon detector with a fault is returned to the factory for maintenance, but the fault location also needs experienced maintenance personnel to locate in the maintenance process, and more single photon detectors are involved in the disassembly, assembly and detection processes in the maintenance process, so that a large amount of manpower is input, the maintenance period is long, the efficiency is low, and the maintenance cost is high. For example, components and circuits in the single photon detector are complex, different circuits need different power supply voltages to ensure normal operation of the single photon detector, so that a plurality of power modules are involved, the circuit components are connected in a tree topology, and the abnormality or the fault of one power module inevitably affects the subsequent circuit test. Therefore, various difficulties are faced when testing and fault positioning are carried out on each circuit structure in the single photon detector, and a set of barrier-free fault self-detection method and device are needed to be designed, so that the maintenance efficiency is higher and the fault positioning is more accurate when the single photon detector is maintained.
Disclosure of Invention
Aiming at the problems, the invention provides a method and a device suitable for one-key fault detection of a single-photon detector, which can improve the fault detection efficiency and fault positioning accuracy of the single-photon detector and the fault detection normalization of the detector, and reduce the detection cost and the labor cost.
In order to achieve the technical purpose, the invention provides a technical scheme that the fault self-detection method suitable for the single photon detector comprises the following steps:
s1, establishing hardware connection among a picosecond pulse light source, a variable optical attenuator and the single photon detector to be detected, and establishing data connection between an upper computer and the single photon detector to be detected;
step S2, sequentially acquiring the measurement data of each component of the single photon detector according to a test procedure instruction preset by an upper computer, analyzing the acquired data and generating a test report;
the testing procedure comprises the following sub-steps:
step S201, an upper computer sets the lowest bias voltage of an avalanche photodiode, and a power supply voltage and key signal amplitude detection circuit respectively detects whether the output voltage amplitude of a power supply module and the amplitude of a dead time control signal are in a normal value interval; if yes, go to step S202; if not, the power supply topology protection circuit is started, after the fault power supply module is replaced, the detection of the rear-level power supply module is continued, and meanwhile, the position of the fault power supply module is positioned and a corresponding fault report is generated;
step S202, the upper computer obtains an output voltage value of the bias control circuit collected by the bias current detection circuit, compares the output voltage value with a preset value and judges whether the difference value is larger than a preset error value or not; if so, generating a corresponding fault report; if not, executing step S203;
step S203, starting avalanche photodiode fault detection, collecting real-time test values of the avalanche photodiodes by a bias current detection circuit, and drawing a V-I performance curve of the avalanche photodiodes according to the real-time test values by an upper computer; judging whether the avalanche photodiode has faults or not according to a dark current curve, a photocurrent curve and responsivity characteristics in the V-I performance curve; if so, generating a corresponding fault report; if not, executing step S204;
step S204, detecting the real-time temperature value of the TEC module by the temperature detection circuit, controlling the temperature rise and the temperature drop of the TEC module according to the target temperature set by the upper computer, obtaining the real-time temperature value, comparing the real-time temperature value with the target value, and judging whether the deviation of the temperature value is greater than a preset temperature difference value or not; if so, generating a corresponding fault report; if not, go to step S205;
s205, starting the avalanche signal amplification circuit to detect faults, wherein the avalanche signal screening circuit screens a threshold scanning process according to an avalanche signal set by an upper computer, and compares the detected avalanche threshold with a reference threshold to judge whether the amplification chip has faults or not; if so, generating a corresponding fault report; if not, the detection is finished.
In the scheme, after the picosecond pulse light source, the variable optical attenuator, the single photon detector to be detected and the upper computer are sequentially connected, the upper computer sends detection logic to a logic controller of the single photon detector, and sequentially acquires acquired information, wherein the acquired information comprises a voltage amplitude value of a power module, a dead time control signal amplitude value, a bias voltage value of a bias voltage control circuit, a performance parameter of an avalanche photodiode, a temperature value of a TEC module and an output value of the avalanche signal amplification circuit, and is respectively used for detecting and positioning faults of each power module, bias voltage control circuit, performance loss or faults of the avalanche photodiode and temperature control faults of the TEC module or the TEC control circuit; because the faults of the components or the circuit structures detected in advance can influence the detection of the components or the circuit structures behind, the detection logic and fault diagnosis method can accurately identify and accurately position the faults, and the detection and maintenance efficiency is improved.
Preferably, step S201 includes the steps of:
step S2011, a topological structure tree of the power supply modules is constructed according to the voltage levels of the power supply modules and the circuit connection relation, each power supply module is used as a child node in the topological structure tree, the child nodes are correspondingly provided with standby child node circuits, and the plurality of standby child node circuits form a power supply topological protection circuit;
s2012, the upper computer sequentially collects the actually measured voltage values output by the sub nodes in the topological structure tree according to the hierarchy; calculating the voltage deviation value between the measured voltage value and the theoretical voltage value
If the voltage deviation value is small
Is greater than
Locking the position of the fault child node, and executing step S2013, wherein
Is an allowable voltage error range; if the power supply module has no fault, detecting the next-level power supply module;
step S2013, the relay switch of the standby sub-node circuit corresponding to the fault sub-node acts, so that standby power modules of the same type as the fault sub-node are connected to two ends of the power module of the fault sub-node in parallel, meanwhile, the circuit of the output end of the power module of the fault sub-node is opened, and step S2012 is continuously executed; the standby sub-node circuit comprises a standby power supply module and a relay switch, wherein the standby power supply module and the relay switch are of the same type as the fault sub-node; wherein the voltage deviation value
Then, the relay switch acts; deviation value of voltage
When the relay switch is not operated, the output end circuit of the tested power supply module keeps a path.
In the scheme, components and circuits in the single photon detector are complex, different circuits need different voltages to ensure normal work of the single photon detector, the related power modules are numerous, the circuit components are connected in a tree topology, and one abnormal power module or fault inevitably affects the subsequent circuit test. Therefore, the power supply topology protection circuit is designed for ensuring that the detection of each circuit structure in the single photon detector can be carried out smoothly, the power supply of each power supply module can be ensured to be normal, even if some power supply modules have faults, the subsequent detection process can be carried out smoothly, meanwhile, the abnormal power supply module can be accurately positioned, and the replacement or the maintenance is convenient.
Step S201 further includes the steps of:
after the power module verifies and eliminates faults, the upper computer sets dead time, the dead time control circuit outputs pulse signals with pulse width equal to the dead time according to the set dead time, and the pulse signals are amplified by the amplification chip to obtain dead time signals;
the upper computer obtains the dead time signal obtained by collection, draws a real-time dead time signal curve, and if the deviation of the high level voltage theoretical value of the dead time signal and the actual collection value is larger than
Judging that the corresponding amplification chip is damaged, and generating a fault report;
and synchronously, drawing a dead time signal curve by the upper computer, calculating the half-height width of the dead time, and if the half-height width of the dead time control signal is inconsistent with the set dead time, judging that the dead time control circuit has a fault and generating a fault report.
Preferably, the determining whether the avalanche photodiode is damaged or not based on the dark current curve includes the steps of:
under the condition of no illumination, reverse voltage is applied to the avalanche photodiode, and the current value is stabilized to
Obtaining the breakdown voltage
And drawing a dark current curve, wherein in the real-time drawn dark current curve, the current
The corresponding voltage value is
Will break down voltage
Comparing the actual breakdown voltage with the actual breakdown voltage of the avalanche photodiode preset in the upper computer, and if the difference value of the breakdown voltages is larger than the inherent error value of the component, indicating that the avalanche photodiode is damaged; generating a fault report;
under the condition of no illumination, the upper computer collects the reverse voltage of the avalanche photodiode to be Vb=Vbr-2V, at which time the dark current IdIf I isd＞2IoA fault is considered to be likely and further determination is required from the photocurrent curve.
Preferably, the determining whether the avalanche photodiode is damaged or not based on the photocurrent curve includes the steps of:
obtaining the breakdown voltage V of the avalanche photodiodebrThen, the upper computer sets the bias voltage value from 0-VbrPerforming V-I performance scanning test to obtain a photocurrent curve of the avalanche photodiode;
performing three-segment linear fitting on the photocurrent according to typical characteristic values of the avalanche photodiode to obtain the slope and intercept of each segment,
standard slope thresholds corresponding to the avalanche photodiodes in the three stages are set in the upper computer, and whether the avalanche photodiodes are damaged or not is judged according to comparison of the standard slope thresholds;
and when the photocurrent curve drawn according to the acquisition value cannot be subjected to three-stage linear fitting, judging that the avalanche photodiode is damaged.
In the scheme, as a first method for judging whether the avalanche photodiode is in fault, according to performance test of the avalanche photodiode without fault, a performance curve is divided into three sections, and the upper computer performs piecewise linear fitting on the photocurrent curve to obtain the slope and intercept of each section. The slope of the 1 st region is close to 0; the 2 nd section area is a linear area, the slope range of the area can be set and defined according to the actually measured slope range, and whether the performance is normal is judged by comparing the slope range with the threshold value of the slope range; the slope of the 3 rd region tends to be infinite, and the slope threshold value is a slope judgment threshold value obtained through a bottom-of-touch test. Setting slope threshold values of all stages in the upper computer, judging whether a V-I curve of the APD accords with the characteristics of the APD by the upper computer according to the slope, if the slope of all stages exceeds the threshold value range or a photocurrent curve cannot be subjected to three-stage partition according to a normal APD (as the damaged APD curve cannot be obviously segmented into 3 areas), considering that breakdown problems possibly occur in the APD, and judging that the APD is damaged.
Preferably, the determining whether the avalanche photodiode is damaged or not according to the photocurrent curve further includes the steps of:
the upper computer obtains the area of a performance curve enclosed by the standard photocurrent curve according to the standard photocurrent curve fitted by the typical characteristic values of the normally undamaged avalanche photodiodes in batches by integrating the standard photocurrent curve
；
The upper computer draws a photocurrent curve of the avalanche photodiode to be tested according to the collected value, and the area of a performance curve enclosed by the photocurrent curve is obtained by integrating the tested photocurrent curve
I.e. by
；
If it is
Determining the avalanche photodiode is damaged, wherein
Maximum performance loss rate allowed for avalanche photodiode。
In the scheme, as a second method for judging whether the avalanche photodiode is in fault, because the photocurrent curves of the fault-free avalanche photodiodes are in three-section type, the function relationship between the area enclosed by the photocurrent curves of the fault-free avalanche photodiodes and the performance thereof is obtained by fitting according to the curves of a plurality of groups of fault-free avalanche photodiodes, and when the function relationship is used, the function relationship between the area enclosed by the photocurrent curves of the fault-free avalanche photodiodes and the performance of the fault-free avalanche photodiodes is obtained
Indicating excessive loss of performance, an avalanche photodiode determines a fault, wherein
An empirical value between the area of the performance curves and the measured performance parameter is obtained.
Preferably, the determining whether the avalanche photodiode is damaged or not based on the responsivity characteristic includes the steps of:
the upper computer sets the avalanche photodiode to obtain the average power w of the continuous light;
obtaining reverse voltage V according to photocurrent curvebCorresponding current Id；
Calculating the responsivity Re = I of the avalanche photodioded / w；
If the responsivity Re is more than Re0, judging that the performance of the avalanche photodiode is normal; otherwise, judging that the avalanche photodiode is damaged; wherein Re0 is the standard parameter of responsivity when the avalanche photodiode is normal in performance.
In the scheme, as a third method for judging whether the avalanche photodiode fails, the avalanche photodiode has high sensitivity to a single photon, and the detection efficiency and accuracy of the single photon detector are directly determined by the performance of the avalanche photodiode; therefore, it is necessary to design various methods for judging the performance of the device and to perform comprehensive diagnosis.
The fault self-detection device suitable for the single photon detector comprises a picosecond pulse light source, a variable optical attenuator, a sampling circuit, a power supply topology protection circuit and an upper computer; the picosecond pulse light source generates an optical pulse signal and an electric signal which is homologous with the optical pulse signal, the electric signal is used as a trigger signal of the single photon detector, the obtained optical pulse signal is processed by the adjustable optical attenuator to obtain a single photon optical pulse, and the single photon optical pulse is used as a test signal of the single photon detector; the power supply topology protection circuit is used for realizing continuous reliability process detection of a power supply module in the single-photon detector, and the sampling circuit acquires a sampling value of a part to be detected of the single-photon detector; the upper computer is used for setting a test procedure instruction, reading test data, analyzing the data and generating a test report, and is in communication connection with the single-photon detector.
In the scheme, the sampling circuit and the power supply topology protection circuit can be used as an internal circuit structure of the single photon detector and connected with an FPGA controller in the single photon detector to realize signal acquisition, and can also be used as an independent external circuit device and connected with an expansion interface of the FPGA controller to realize the control and acquisition functions during maintenance; the FPGA controller and each circuit structure or module to be detected are respectively provided with a signal acquisition or control interface, so that the expansion and control of peripheral circuits are facilitated, and the maintenance and the repair of a subsequent single photon detector are facilitated.
Preferably, the sampling circuit comprises a bias current detection circuit, an avalanche signal screening circuit, a temperature detection circuit, a power supply voltage and key signal amplitude detection circuit, and the single photon detector comprises an FPGA controller, a bias control circuit, an avalanche signal amplification circuit, an avalanche photodiode, a dead time control circuit, a TEC control circuit, a USB interface circuit and a gate control and trigger input screening circuit;
the bias current detection circuit is connected with the FPGA controller and is used for detecting bias voltage and the bias current value of the avalanche photodiode;
the avalanche signal screening circuit is connected with the FPGA controller and is used for screening the amplified avalanche signal and outputting the amplified avalanche signal in a monostable manner;
the temperature detection circuit is connected with the FPGA controller and used for monitoring the real-time temperature of the TEC module;
the power supply voltage and key signal amplitude detection circuit is connected with the FPGA controller and is used for detecting the output voltage of each power supply module and the amplitude of a key signal, wherein the key signal amplitude comprises a dead time control signal amplitude;
the bias control circuit is connected with the FPGA controller and provides reverse bias voltage for the avalanche photodiode;
the avalanche signal amplification circuit amplifies weak avalanche signals and inputs the amplified weak avalanche signals into the avalanche signal discrimination circuit to discriminate the avalanche signals;
the dead time control circuit is used for amplifying a dead time signal output by the FPGA control circuit and then inputting the amplified dead time signal to the anode of the avalanche photodiode to control the working state of the avalanche photodiode;
the TEC control circuit is connected with the FPGA controller and used for controlling the refrigerating power of the TEC module so that the refrigerating temperature of the avalanche photodiode reaches a set target value; the gate control and trigger input discrimination circuit is used for discriminating an externally input gate control signal and a trigger signal and then respectively inputting the signals into the FPGA controller to realize the working state control of the avalanche photodiode and the TDC Start triggering;
the FPGA controller realizes various analog-digital logic control functions for the single-photon detector;
the USB interface circuit realizes data transmission between the FPGA controller and the upper computer through a USB interface protocol.
Preferably, the power supply topology protection circuit comprises standby sub-node circuits matched with the number of the single photon detector power supply modules, the standby sub-node circuits comprise standby power supply modules of the same type as the corresponding matched power supply modules and relay switches, and the relay switches are respectively connected with the power supply modules and the voltage output ends of the standby power supply modules in series; when the power module breaks down, the relay switch acts to enable the standby power module to be connected to two ends of the fault power module in parallel, and meanwhile, the circuit at the output end of the fault power module is opened.
The invention has the beneficial effects that:
1. the invention is suitable for the method and the device for detecting the one-key fault of the single photon detector.A detection logic is set through an upper computer, the voltage amplitude value of a power module, the dead time control signal amplitude value, the bias voltage value of a bias control circuit, the performance parameter of an avalanche photodiode, the temperature value of a TEC module and the output value of the avalanche signal amplification circuit are respectively and sequentially obtained and are respectively used for detecting and positioning the fault of each power module, the fault of the bias control circuit, the performance loss or the fault of the avalanche photodiode and the temperature control fault of the TEC module or the TEC control circuit; the single photon detector is automatically detected at key parts, so that the detection efficiency is improved;
2. the designed power supply topology protection circuit can ensure that each power supply module supplies power normally, even if some power supply modules are in failure, the subsequent detection process can still be carried out smoothly, and meanwhile, the abnormal power supply module can be accurately positioned, so that the replacement or the maintenance is convenient;
3. the avalanche photodiode has high sensitivity to single photons, the performance of the avalanche photodiode directly determines the detection efficiency and accuracy of the single photon detector, and three detection methods are designed to comprehensively analyze the performance of the avalanche photodiode and judge faults, so that the fault identification accuracy is improved.
4. The technical scheme of the invention can be applied to other photoelectric detection fields, and the development of the related industry is promoted.
Drawings
FIG. 1 is a simplified flow chart of a single photon detector one-key failure detection method of the present invention.
Fig. 2 is a schematic diagram of a topology tree structure of the power module of the present invention.
FIG. 3 is a schematic diagram of the power topology protection circuit and the circuit connection of the sub-nodes in the topology tree according to the present invention.
FIG. 4 is a graph showing the magnitude of the dead time signal of the present invention.
Figure 5 is a graph of the V-I performance of the avalanche photodiode of the present invention.
FIG. 6 is a schematic structural diagram of one-photon detector one-key fault detection according to the present invention.
The notation in the figure is: the device comprises a 1-picosecond pulse light source, a 2-variable optical attenuator, a 31-FPGA controller, a 32-avalanche photodiode, a 33-dead time control circuit, a 34-avalanche signal amplification circuit, a 35-bias control circuit, a 36-TEC control circuit, a 361-TEC module, a 37-USB interface circuit, a 38-gating and triggering input screening circuit, a 51-bias current detection circuit, a 52-avalanche signal screening circuit, a 53-temperature detection circuit, a 54-supply voltage and key signal amplitude detection circuit, a D-power supply topology protection circuit and a P-power supply module topology structure tree.
Detailed Description
For the purpose of better understanding the objects, technical solutions and advantages of the present invention, the following detailed description of the present invention with reference to the accompanying drawings and examples should be understood that the specific embodiment described herein is only a preferred embodiment of the present invention, and is only used for explaining the present invention, and not for limiting the scope of the present invention, and all other embodiments obtained by a person of ordinary skill in the art without making creative efforts shall fall within the scope of the present invention.
Example (b): as shown in fig. 6, the structural schematic diagram of the fault self-detection device suitable for the single-photon detector is that the fault self-detection device is composed of a picosecond pulse light source 1, an adjustable optical attenuator 2, a sampling circuit, a power supply topology protection circuit D and an upper computer; the picosecond pulse light source generates a light pulse signal and an electric signal which is homologous with the light pulse, the electric signal is used as a trigger signal of the single photon detector, and the single photon light pulse is obtained after the obtained light pulse signal is processed by the adjustable optical attenuator and is used as a test signal of the single photon detector; the picosecond pulse light source can generate an optical pulse signal with the pulse width of picosecond magnitude on one hand, and can output an electric signal trigger signal which is homologous with the optical pulse signal to be connected with the detector to be detected as an input signal of the detector. The adjustable optical attenuator attenuates the received light pulse, outputs a stable single photon pulse light signal, and is connected to a detector to be detected through an optical fiber. The power supply topology protection circuit is used for realizing continuous reliability process detection of a power supply module in the single photon detector, and the sampling circuit acquires a sampling value of a part to be detected of the single photon detector; the upper computer is used for setting a test procedure instruction, reading test data, analyzing the data and generating a test report, and is in communication connection with the single-photon detector.
The sampling circuit consists of a bias current detection circuit 51, an avalanche signal screening circuit 52, a temperature detection circuit 53, a power supply voltage and key signal amplitude detection circuit 54, and the single photon detector comprises an FPGA controller 31, a bias control circuit 35, an avalanche signal amplification circuit 34, an avalanche photodiode 32, a dead time control circuit 33, a TEC control circuit 36, a USB interface circuit 37 and a gate control and trigger input screening circuit 38; the bias current detection circuit is used for detecting bias voltage and the bias current value of the avalanche photodiode; is connected with the FPGA control controller; the avalanche signal screening circuit is used for screening the amplified avalanche signal and outputting the amplified avalanche signal in a monostable manner; is connected with the FPGA controller; the temperature detection circuit is used for monitoring the real-time temperature of the TEC module 361; is connected with the FPGA controller; the power supply voltage and key signal amplitude detection circuit is used for detecting the output voltage of each power supply module and the amplitude of a key signal, wherein the key signal amplitude comprises a dead time control signal amplitude; the FPGA controller is connected; the bias control circuit provides reverse bias voltage for the avalanche photodiode; is connected with the FPGA control circuit; the avalanche signal amplification circuit amplifies weak avalanche signals and inputs the amplified weak avalanche signals into the avalanche signal discrimination circuit to discriminate the avalanche signals; the dead time control circuit is used for amplifying a dead time signal output by the FPGA control circuit and then inputting the amplified dead time signal to the anode of the avalanche photodiode to control the working state of the avalanche photodiode; the TEC control circuit is used for controlling the refrigerating power of the TEC module, so that the refrigerating temperature of the avalanche photodiode reaches a set target value; the FPGA controller is connected; the gate control and trigger input discrimination circuit is used for discriminating an externally input gate control signal and a trigger signal and then respectively inputting the signals into the FPGA controller to realize the working state control of the avalanche photodiode and the TDC Start triggering; the FPGA controller is used for realizing various analog-digital logic control functions for the single-photon detector; the USB interface circuit realizes data transmission between the FPGA controller and the upper computer through a USB interface protocol.
Constructing a power supply module topological structure tree P according to the voltage grade and the circuit connection relation of each power supply module, wherein each power supply module is used as a child node in the topological structure tree, the child nodes are correspondingly provided with standby child node circuits, and the standby child node circuits form a power supply topological protection circuit; the power supply topology protection circuit comprises standby sub-node circuits matched with the number of the single-photon detector power supply modules, wherein the standby sub-node circuits comprise standby power supply modules of the same type as the corresponding power supply modules and relay switches, the relay switches are single-pole double-throw relay switches independently controlled by the FPGA controller, and the relay switches are respectively connected with the power supply modules and the voltage output ends of the standby chips in series; when the power module breaks down, the relay switch acts to enable the standby power module to be connected to two ends of the fault power module in parallel, and meanwhile, the circuit at the output end of the fault power module is opened.
In this embodiment, the sampling circuit and the power supply topology protection circuit can be used as an internal circuit structure of the single photon detector, connected with an FPGA controller in the single photon detector to realize signal acquisition, and can also be used as an independent external circuit device, connected with an expansion interface of the FPGA controller, and realizing control and acquisition functions during maintenance; the FPGA controller and each circuit structure or module to be detected are respectively provided with a signal acquisition or control interface, so that the expansion and control of peripheral circuits are facilitated, and the maintenance and the repair of a subsequent single photon detector are facilitated.
As shown in fig. 1, the fault self-detection method suitable for the single-photon detector includes the following steps:
s1, establishing hardware connection among a picosecond pulse light source, a variable optical attenuator and a single photon detector to be tested; and establishing data connection between the upper computer and the single photon detector to be detected.
S2, sequentially acquiring measurement data of each component of the single photon detector according to a test procedure instruction preset by an upper computer, analyzing the acquired data and generating a test report;
the testing procedure comprises the following sub-steps:
step S201, the upper computer sets the lowest bias voltage of the avalanche photodiode, the power supply voltage and key signal amplitude detection circuit respectively detects whether the output voltage amplitude and the dead time control signal amplitude of the power supply module are in a normal value interval, and if yes, S202 is executed; if not, the power supply topology protection circuit starts to replace the fault power supply module and then continues to detect the rear-level power supply module to generate a corresponding fault report;
step S202, the upper computer obtains an output voltage value of the bias control circuit collected by the bias current detection circuit, compares the output voltage value with a preset value, and judges whether the difference value is larger than a preset error value or not; if so, generating a corresponding fault report; if not, executing S203;
step S203, starting avalanche photodiode fault detection, and drawing a V-I performance curve of the avalanche photodiode according to the real-time test value of the avalanche photodiode collected by the bias current detection circuit by the upper computer; as shown in fig. 5, whether the avalanche photodiode is malfunctioning is determined according to a dark current curve, a photocurrent curve, and responsivity characteristics in the V-I performance curve; if so, generating a corresponding fault report; if not, executing S204;
step S204, detecting the real-time temperature value of the TEC module by the temperature detection circuit, controlling the temperature rise and the temperature drop of the TEC module according to the target temperature set by the upper computer, obtaining an actual temperature value and comparing the actual temperature value with the target value, judging whether the deviation of the temperature value is greater than a preset temperature difference value, and if so, generating a corresponding fault report; if not, go to step S205;
s205, starting the avalanche signal amplification circuit to detect faults, setting an avalanche signal screening threshold scanning process by the avalanche signal screening circuit according to an upper computer, and comparing the detected avalanche threshold with a reference threshold to judge whether the amplification chip has faults or not; and generating a corresponding fault report, and finishing the detection.
In this embodiment, because components and circuits in the single photon detector are complex, different circuits need different voltages to ensure normal operation thereof, the related power modules are numerous, and the circuit components are connected in a tree topology, and an abnormality or a fault of one power module inevitably affects subsequent circuit tests. Therefore, the power supply topology protection circuit is designed for ensuring that the detection of each circuit structure in the single photon detector can be carried out smoothly, the power supply of each power supply module can be ensured to be normal, even if some power supply modules have faults, the subsequent detection process can be carried out smoothly, meanwhile, the abnormal power supply module can be accurately positioned, and the replacement or the maintenance is convenient.
Step S201 includes the steps of:
step S2011, a topological structure tree of the power supply modules is constructed according to the voltage levels of the power supply modules and the circuit connection relation, each power supply module is used as a child node in the topological structure tree, the child nodes are correspondingly provided with standby child node circuits, and the plurality of standby child node circuits form a power supply topological protection circuit;
s2012, the upper computer sequentially collects the actually measured voltage values output by the power module nodes in the topological structure tree according to the hierarchy; voltage deviation value between measured voltage value and theoretical voltage value
If it is greater than
If so, locking the fault position of the power supply module, and executing a step S2013, wherein alpha is an allowable voltage error range; if the power supply module has no fault, detecting the next-level power supply module;
step S2013, the relay switching action of the standby sub-node circuit corresponding to the fault sub-node enables the standby power supply modules of the same type as the sub-node to be connected to the two ends of the power supply module of the fault sub-node in parallel, meanwhile, the circuit of the output end of the fault power supply module is opened, and step S2012 is continuously executed; the standby sub-node circuit comprises a standby power supply module and a relay switch, wherein the standby power supply module and the relay switch are of the same type as the sub-node, and the voltage deviation value
The relay switch acts; deviation value of voltage
When the relay switch does not act, the circuit access of the output end of the tested power supply module is ensured.
In this embodiment, because components and parts and circuit in the single photon detector constitute complicacy, different circuits need different voltages in order to guarantee its normal work, consequently, the power module that relates is numerous, and be the tree topology between each circuit constitution and connect, one of them power module is unusual or the trouble must produce the influence to following circuit test, consequently, in order to guarantee going on smoothly of the detection of each circuit structure in the single photon detector, consequently, the power topology protection circuit of design can guarantee that each power module supplies power normally, even some power module trouble, subsequent detection process still can go on smoothly, can pinpoint unusual power module simultaneously, be convenient for change or maintenance.
The specific embodiment applicable to the topology tree of the power module is as follows:
fig. 2 shows a power module topology tree, which includes eleven power modules, which are respectively denoted as P1, P2, P3, P4, P5, P6, P7, P8, P9, P10 and P11; the power modules P1, P2, P3 and P4 are connected in parallel, P5, P6, P7 and P8 are connected in parallel, P8, P9 and P10 are connected in series, P3 and P9 are connected in series, and the conventional detection mode is as follows: detect P1-P11 in proper order, power module's output is provided with electric potential collection port B1, B2, B3, B4, B5, B6, B7, B8, B9, B10, B11, supply voltage and key signal amplitude detection circuit gather the voltage of position collection port respectively and send to the FPGA controller and solve, judge whether power module is unusual, if power module damages, then stop subsequent detection, need to carry out the maintenance after accomplishing to the trouble at present, just can carry out the detection of follow-up circuit module, maintenance efficiency has seriously been reduced. If power module P2 fails, the detection of power modules on the same line as P2 is suspended. As shown in fig. 3, for the application of the power topology protection circuit in the power module detection process, a single-pole double-throw relay switch that can be controlled by an FPGA controller is disposed on an output end line of each power module, and is recorded as: k1, K2, K3, K4, K5, K6, K7, K8, K9, K10, and K11; the control ends of the single-pole double-throw relay switch are respectively as follows: a1, a2, A3, a4, a5, a6, a7, A8, a9, a10, and a 11; the control ends of the single-pole double-throw relay switches are respectively and independently controlled by corresponding control pins of the FPGA controller; after the standby power supply module is connected with the single-pole double-throw relay switch to enable the switch to act, the standby power supply module is connected with the power supply module in parallel, and the output end of the power supply module is disconnected, so that the standby power supply module replaces the function of a fault power supply module, and the reliability of the subsequent power supply module is conveniently detected; the standby power supply module is noted as: d1, D2, D3, D4, D5, D6, D7, D8, D9, D10 and D11. When this scheme is used specifically: the power supply voltage and key signal amplitude detection circuit respectively collects the voltages of the point position collection port and sends the voltages to the FPGA controller for resolving, if the FPGA controller detects that the voltage of the power supply module is abnormal (such as the power supply module P2 fails), the test is stopped, and the fault position of the power supply module test is recorded; and in other circuit test power-off operation, the FPGA controller controls the single-pole double-throw relay switch K2 to act, so that the output end of the power supply module P2 is open, the standby power supply module D2 is connected to provide normal working voltage for subsequent power supply module tests, and the tests of other power supply modules and the connection of the standby power supply modules follow the above rules.
Step S201 further includes the steps of:
after the power module finishes detection and eliminates faults, the upper computer sets dead time, the dead time control circuit outputs a pulse signal with the pulse width equal to the dead time according to the set dead time, and the pulse signal is amplified by the amplification chip to obtain a dead time signal;
the upper computer acquires the acquired dead time signal, draws a real-time dead time signal curve, and judges that a corresponding amplification chip is damaged if the deviation of the high level voltage theoretical value of the dead time signal and the actual acquisition value is larger than alpha to generate a fault report;
synchronously, drawing a dead time signal curve by the upper computer, calculating the half-height width of the dead time, and judging that the dead time control circuit has a fault if the half-height width of the dead time control signal is inconsistent with the set dead time; and generating a fault report.
The specific implementation is as follows: and after the power supply chip is verified, detecting a dead time control signal. Dead time signal as shown in fig. 4, the dead time control signal generation process is as follows: setting dead time by an upper computer, outputting a pulse signal of pulse width = dead time by the FPGA according to the set dead time, wherein the high level is 3.3V, obtaining a final dead time control signal by an amplifying chip, and finally outputting the high level to be 6V; collecting dead time signal amplitude through an ADC chip after resistance voltage division and ADC chip collection, drawing a real-time dead time signal curve by upper computer software, and judging whether an amplification chip of a corresponding dead time signal is damaged or not by judging whether the difference between a high level voltage of the dead time signal and a collection value is larger than 10%; adjusting the dead time, drawing a dead time signal curve by the upper computer, calculating the half-dead-time full width at half maximum (T2-T1), and judging whether the dead time control circuit is effective for dead time function control by judging whether the half-dead-time width of the dead time control signal is consistent with the set dead time; further, the flow of calculating the half-height width of the dead time is that the upper computer scans the amplitude of the dead time signal, scans and draws an amplitude curve of the dead time signal, the abscissa is time, the ordinate is the dead time amplitude, and two time position differences of half of the maximum amplitude of the dead time signal are taken as the half-height width of the dead time signal.
The method for judging whether the avalanche photodiode is damaged or not according to the dark current curve comprises the following steps:
firstly, a dark current testing process is carried out, an upper computer sends a voltage of 0-75V, a detector reports a bias current real-time testing value through a bias current collecting circuit, a V-I curve of an APD (avalanche photo diode) is synchronously drawn, light signal input is closed when dark current is tested, and light signal input is opened when photocurrent is tested;
under the condition of no illumination, reverse voltage is applied to the avalanche photodiode, the current value is stabilized to be Io, breakdown voltage Vbr is obtained, a dark current curve is drawn, in the dark current curve drawn in real time (as shown in a dotted line part in figure 5), the voltage value corresponding to the current Io is Vbr which is compared with the actual breakdown voltage of the avalanche photodiode preset in an upper computer, and if the calculated difference value is larger than the inherent error value of the component, the avalanche photodiode is damaged; generating a fault report;
under the condition of no illumination, the upper computer collects reverse voltage of the avalanche photodiode to be Vb = Vbr-2V, at the moment, dark current Id is judged to be possible to have faults if Id is larger than 2Io, and further judgment is needed according to a photocurrent curve; the method is used as a prejudgment basis for judging whether the avalanche photodiode is in fault or not; and cannot be used as a final basis for determining whether the avalanche photodiode is in failure.
The method for judging whether the avalanche photodiode is damaged or not according to the photocurrent curve comprises the following steps:
after the breakdown voltage Vbr of the avalanche photodiode is obtained, the upper computer sets a bias voltage value to carry out V-I performance scanning test from 0-Vbr, and a photocurrent curve (shown as a solid line part in figure 5) of the avalanche photodiode is obtained;
performing three-segment linear fitting on the photocurrent according to typical characteristic values of the avalanche photodiode to obtain the slope and intercept of each segment,
standard slope threshold values corresponding to the avalanche photodiodes in three stages are set in the upper computer, and whether the avalanche photodiodes are damaged or not is judged according to comparison of the slope threshold values;
and when the photocurrent curve drawn according to the acquisition value cannot be subjected to three-stage linear fitting, judging that the avalanche photodiode is damaged.
In this embodiment, as a first determination method for determining whether the avalanche photodiode is faulty, according to a performance test of the fault-free avalanche photodiode, a performance curve of the avalanche photodiode is divided into three sections, and the upper computer performs piecewise linear fitting on the photocurrent curve to obtain a slope and an intercept of each section. The slope of the 1 st region is close to 0; the 2 nd section area is a linear area, the slope range of the area can be set and defined according to the actually measured slope range, and whether the performance is normal is judged by comparing the slope range with the threshold value of the slope range; the slope of the 3 rd region tends to be infinite, and the slope threshold value is a slope judgment threshold value obtained through a bottom-of-touch test. Setting slope threshold values of all stages in the upper computer, judging whether a V-I curve of the APD accords with the characteristics of the APD by the upper computer according to the slope, if the slope of all stages exceeds the threshold value range or a photocurrent curve cannot be subjected to three-stage partition according to a normal APD (as the damaged APD curve cannot be obviously segmented into 3 areas), considering that breakdown problems possibly occur in the APD, and judging that the APD is damaged.
Determining whether the avalanche photodiode is damaged or not according to the photocurrent curve further comprises the steps of:
the upper computer obtains the area of a performance curve enclosed by the standard photocurrent curve according to the standard photocurrent curve fitted by the typical characteristic values of the normally undamaged avalanche photodiodes in batches by integrating the standard photocurrent curve
；
The upper computer draws a photocurrent curve of the avalanche photodiode to be tested according to the collected value, and obtains the area of a performance curve enclosed by the photocurrent curve by integrating the tested photocurrent curve, namely
；
If it is
Determining the avalanche photodiode is damaged, wherein
The maximum performance loss rate allowed for the avalanche photodiode.
In this embodiment, as a second method for determining whether an avalanche photodiode is faulty, since the photocurrent curves of fault-free avalanche photodiodes are all in three-stage form, fitting is performed according to the curves of multiple sets of fault-free avalanche photodiodes to obtain a functional relationship between the area surrounded by the photocurrent curves of fault-free avalanche photodiodes and the performance of the fault-free avalanche photodiodes, and when the fault-free avalanche photodiodes are faulty, the function of the area surrounded by the photocurrent curves of fault-free avalanche photodiodes is determined
Indicating excessive loss of performance, an avalanche photodiode determines a fault, wherein
An empirical value between the area of the performance curves and the measured performance parameter is obtained.
The determination of whether the avalanche photodiode is damaged or not based on the responsivity characteristic includes the steps of:
the upper computer sets the avalanche photodiode to obtain the average power w of the continuous light;
obtaining a current Id corresponding to the reverse voltage Vb according to the photocurrent curve;
calculating the responsivity Re = Id/w of the avalanche photodiode;
if the responsivity Re is more than Re0, judging that the performance of the avalanche photodiode is normal; otherwise, judging that the avalanche photodiode is damaged; wherein Re0 is the standard parameter of responsivity when the avalanche photodiode is normal in performance.
In this embodiment, as a third method for determining whether the avalanche photodiode is faulty, since the avalanche photodiode has high sensitivity to a single photon, the performance of the avalanche photodiode directly determines the detection efficiency and accuracy of the single photon detector; therefore, it is necessary to design various methods for judging the performance of the device and to perform comprehensive diagnosis.
The above-mentioned embodiments are preferred embodiments of the method and apparatus for self-detecting faults of single-photon detectors, and the scope of the invention is not limited thereto, and the invention includes any equivalent variations in shape and structure according to the invention.
Claims (10)
1. The fault self-detection method suitable for the single-photon detector is characterized by comprising the following steps of:
s1, establishing hardware connection among a picosecond pulse light source, a variable optical attenuator and a single photon detector to be tested; establishing data connection between an upper computer and a single photon detector to be detected;
s2, sequentially acquiring measurement data of each component of the single photon detector according to a test procedure instruction preset by an upper computer, analyzing the acquired data and generating a test report;
the testing procedure comprises the following sub-steps:
step S201, the upper computer sets the lowest bias voltage of the avalanche photodiode, the power supply voltage and key signal amplitude detection circuit respectively detects whether the output voltage amplitude and the dead time control signal amplitude of the power supply module are in a normal value interval, and if yes, the step S202 is executed; if not, the power supply topology protection circuit starts to replace the fault power supply module and then continues to detect the rear-level power supply module, positions the position of the fault power supply module and generates a corresponding fault report;
step S202, the upper computer obtains an output voltage value of the bias control circuit collected by the bias current detection circuit, compares the output voltage value with a preset value, and judges whether the difference value is larger than a preset error value or not; if so, generating a corresponding fault report; if not, executing step S203;
step S203, starting avalanche photodiode fault detection, and drawing a V-I performance curve of the avalanche photodiode according to the real-time test value of the avalanche photodiode collected by the bias current detection circuit by the upper computer; judging whether the avalanche photodiode has faults or not according to a dark current curve, a photocurrent curve and responsivity characteristics in the V-I performance curve; if so, generating a corresponding fault report; if not, executing step S204;
step S204, detecting the real-time temperature value of the TEC module by the temperature detection circuit, controlling the temperature rise and the temperature drop of the TEC module according to the target temperature set by the upper computer, obtaining an actual temperature value and comparing the actual temperature value with the target value, judging whether the deviation of the temperature value is greater than a preset temperature difference value, and if so, generating a corresponding fault report; if not, go to step S205;
s205, starting the avalanche signal amplification circuit to detect faults, setting an avalanche signal screening threshold scanning process by the avalanche signal screening circuit according to an upper computer, and comparing the detected avalanche threshold with a reference threshold to judge whether the amplification chip has faults or not; and generating a corresponding fault report, and finishing the detection.
2. The method for self-detection of faults for single-photon detectors according to claim 1, characterized in that it comprises the following steps:
step S201 includes the steps of:
step S2011, a power supply module topological structure tree is constructed according to the voltage grade and the circuit connection relation of each power supply module, each power supply module is used as a sub-node in the topological structure tree, the sub-nodes are correspondingly provided with standby sub-node circuits, and the plurality of standby sub-node circuits form a power supply topological protection circuit;
s2012, the upper computer sequentially collects the actually measured voltage values output by the power module nodes in the topological structure tree according to the hierarchy; voltage deviation value between measured voltage value and theoretical voltage value
If the voltage is larger than alpha, locking the fault position of the power supply module, and executing a step S2013, wherein the alpha is an allowable voltage error range; if the power supply module has no fault, detecting the next-level power supply module;
step S2013, the relay switching action of the standby sub-node circuit corresponding to the fault sub-node enables the standby power supply modules of the same type as the sub-node to be connected to the two ends of the power supply module of the fault sub-node in parallel, meanwhile, the circuit of the output end of the fault power supply module is opened, and step S2012 is continuously executed; the standby sub-node circuit comprises a standby power supply module and a relay switch, wherein the standby power supply module and the relay switch are of the same type as the sub-node, and the voltage deviation value
>Alpha, relay switch action; deviation value of voltage
When the relay switch does not act, the circuit access of the output end of the tested power supply module is ensured.
3. Method for the self-detection of faults applicable to single-photon detectors according to claim 1 or 2, characterized in that it comprises the following steps:
step S201 further includes the steps of:
after the power module verifies and eliminates faults, the upper computer sets dead time, the dead time control circuit outputs pulse signals with pulse width equal to the dead time according to the set dead time, and the pulse signals are amplified by the amplification chip to obtain dead time signals;
the upper computer acquires the acquired dead time signal, draws a real-time dead time signal curve, and judges that a corresponding amplification chip is damaged if the deviation of the high level voltage theoretical value of the dead time signal and the actual acquisition value is larger than alpha to generate a fault report;
synchronously, drawing a dead time signal curve by the upper computer, calculating the half-height width of the dead time, and judging that the dead time control circuit has a fault if the half-height width of the dead time control signal is inconsistent with the set dead time; and generating a fault report.
4. The method for self-detection of faults for single-photon detectors according to claim 1,
the method for judging whether the avalanche photodiode is damaged or not according to the dark current curve comprises the following steps:
under the condition of no illumination, reverse voltage is applied to the avalanche photodiode, the current value is stabilized to be Io, breakdown voltage Vbr is obtained, a dark current curve is drawn, in the dark current curve drawn in real time, the voltage value corresponding to the current Io is the Vbr, the Vbr is compared with the actual breakdown voltage of the avalanche photodiode preset in the upper computer, and if the calculated difference value is larger than the inherent error value of the component, the avalanche photodiode is damaged; generating a fault report;
under the condition of no illumination, the upper computer collects reverse voltage of the avalanche photodiode to be Vb = Vbr-2V, at the moment, dark current Id is judged to be possible to have faults if Id is larger than 2Io, and further judgment is needed according to a photocurrent curve.
5. The method for self-detection of faults for single-photon detectors according to claim 4,
the method for judging whether the avalanche photodiode is damaged or not according to the photocurrent curve comprises the following steps:
after the breakdown voltage Vbr of the avalanche photodiode is obtained, the upper computer sets a bias voltage value to carry out V-I performance scanning test from 0-Vbr, and a photocurrent curve of the avalanche photodiode is obtained;
performing three-segment linear fitting on the photocurrent according to typical characteristic values of the avalanche photodiode to obtain the slope and intercept of each segment,
standard slope threshold values corresponding to the avalanche photodiodes in three stages are set in the upper computer, and whether the avalanche photodiodes are damaged or not is judged according to comparison of the slope threshold values;
and when the photocurrent curve drawn according to the acquisition value cannot be subjected to three-stage linear fitting, judging that the avalanche photodiode is damaged.
6. Method for self-detection of faults applicable to single-photon detectors according to claim 4 or 5,
determining whether the avalanche photodiode is damaged or not according to the photocurrent curve further comprises the steps of:
the upper computer obtains the area of a performance curve enclosed by the standard photocurrent curve according to the standard photocurrent curve fitted by the typical characteristic values of the normally undamaged avalanche photodiodes in batches by integrating the standard photocurrent curve
；
The upper computer draws a photocurrent curve of the avalanche photodiode to be tested according to the collected value, and the area of a performance curve enclosed by the photocurrent curve is obtained by integrating the tested photocurrent curve
I.e. by
；
If it is
Determining the avalanche photodiode is damaged, wherein
Is the maximum loss rate of the performance of the avalanche photodiode.
7. Method for self-detection of faults applicable to single-photon detectors according to claim 4 or 5,
the determination of whether the avalanche photodiode is damaged or not based on the responsivity characteristic includes the steps of:
the upper computer sets the avalanche photodiode to obtain the average power w of the continuous light;
obtaining a current Id corresponding to the reverse voltage Vb according to the photocurrent curve;
calculating the responsivity Re = Id/w of the avalanche photodiode;
if the corresponding degree Re is more than Re0, judging that the performance of the avalanche photodiode is normal; otherwise, judging that the avalanche photodiode is damaged; wherein Re0 is the standard parameter of responsivity when the avalanche photodiode is normal in performance.
8. Fault self-detection device suitable for use in the method for fault self-detection of single-photon detectors according to any of claims 1 to 7, characterized in that it comprises: the system comprises a picosecond pulse light source, a variable optical attenuator, a sampling circuit, a power supply topology protection circuit and an upper computer; the picosecond pulse light source generates a light pulse signal and an electric signal which is homologous with the light pulse, the electric signal is used as a trigger signal of the single photon detector, and the single photon light pulse is obtained after the obtained light pulse signal is processed by the adjustable optical attenuator and is used as a test signal of the single photon detector; the power supply topology protection circuit is used for realizing continuous reliability process detection of a power supply module in the single-photon detector, and the sampling circuit acquires a sampling value of a part to be detected of the single-photon detector; the upper computer is used for setting a test procedure instruction, reading test data, analyzing the data and generating a test report, and is in communication connection with the single-photon detector.
9. The self-fault detection arrangement for single-photon detectors according to claim 8,
the single photon detector comprises an FPGA controller, a bias control circuit, an avalanche signal amplification circuit, an avalanche photodiode, a dead time control circuit, a TEC control circuit, a USB interface circuit and a gate control and trigger input discrimination circuit;
the bias current detection circuit is used for detecting bias voltage and the bias current value of the avalanche photodiode; is connected with the FPGA control controller;
the avalanche signal screening circuit is used for screening the amplified avalanche signal and outputting the amplified avalanche signal in a monostable manner; is connected with the FPGA controller;
the temperature detection circuit is used for monitoring the real-time temperature of the TEC module; is connected with the FPGA controller;
the power supply voltage and key signal amplitude detection circuit is used for detecting the output voltage of each power supply module and the amplitude of a key signal, wherein the key signal amplitude comprises a dead time control signal amplitude; the FPGA controller is connected;
the bias control circuit provides reverse bias voltage for the avalanche photodiode; is connected with the FPGA control circuit;
the avalanche signal amplification circuit amplifies weak avalanche signals and inputs the amplified weak avalanche signals into the avalanche signal discrimination circuit to discriminate the avalanche signals;
the dead time control circuit is used for amplifying a dead time signal output by the FPGA control circuit and then inputting the amplified dead time signal to the anode of the avalanche photodiode to control the working state of the avalanche photodiode;
the TEC control circuit is used for controlling the refrigerating power of the TEC module, so that the refrigerating temperature of the avalanche photodiode reaches a set target value; the FPGA controller is connected;
the gate control and trigger input discrimination circuit is used for discriminating an externally input gate control signal and a trigger signal and then respectively inputting the signals into the FPGA controller to realize the working state control of the avalanche photodiode and the TDC Start triggering;
the FPGA controller realizes various analog-digital logic control functions for the single-photon detector;
the USB interface circuit realizes data transmission between the FPGA controller and the upper computer through a USB interface protocol.
10. The apparatus of claim 8 or 9 for self-detecting faults of single photon detectors in which the power topology protection circuit includes backup sub-node circuits with the number matching the number of power modules of single photon detectors, the backup sub-node circuits include backup power modules of the same type as the corresponding power modules and relay switches, and the relay switches are respectively connected in series with the power modules and the voltage output terminals of the backup chips; when the power module breaks down, the relay switch acts to enable the standby power module to be connected to two ends of the fault power module in parallel, and meanwhile, the circuit at the output end of the fault power module is opened.
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| CN114966360B (en) * | 2022-07-27 | 2022-10-25 | 成都光创联科技有限公司 | System and method for testing avalanche voltage of optical device |
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