CN114062736A - Broadband coaxial probe structure for microwave near-field test - Google Patents
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- CN114062736A CN114062736A CN202111196276.8A CN202111196276A CN114062736A CN 114062736 A CN114062736 A CN 114062736A CN 202111196276 A CN202111196276 A CN 202111196276A CN 114062736 A CN114062736 A CN 114062736A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
- G01R1/06711—Probe needles; Cantilever beams; "Bump" contacts; Replaceable probe pins
- G01R1/06733—Geometry aspects
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
- G01R1/06772—High frequency probes
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Abstract
The invention belongs to the field of electrical characteristic test of semiconductor devices, and particularly relates to a broadband coaxial probe structure for microwave near-field test, which is characterized in that: the coaxial adapter comprises an outer conductor, a dielectric material, an inner conductor, a test needle, a coaxial adapter outer conductor and a coaxial adapter center dielectric, wherein the dielectric material comprises an upper dielectric and a lower dielectric; the inner conductor is wrapped by an upper medium, and the outer conductor wraps the upper medium of the medium material; the test needle is wrapped by the lower medium, the connecting surface of the upper medium and the lower medium and the bottom layer surface of the outer conductor are on the same horizontal plane, the top layer surface of the outer conductor and the connecting surfaces of the coaxial switching center medium and the upper medium are on the same horizontal plane, and the coaxial switching center medium is wrapped by the coaxial switching outer conductor. The invention expands the measurement bandwidth of the coaxial probe by designing the materials and the radiuses of the inner conductor and the outer conductor of the probe, so that the whole device can meet various test conditions when performing microwave near-field test.
Description
Technical Field
The invention belongs to the field of electrical characteristic testing of semiconductor devices, and particularly relates to a broadband coaxial probe structure for microwave near-field testing.
Background
Higher and lower integration and smaller chip size place higher demands on chip design. The testing, as an important part of the chip design process, must follow the rapid development of microwave integrated circuits and semiconductor chips. When the same material is processed, packaged and integrated and then works in a wider microwave frequency band, the performance of the same material is changed due to different frequencies. The electrical parameters of the semiconductor chip under the working condition play an important role in the design of the integrated circuit, and the overall non-uniformity also increases the difficulty of the test of the integrated circuit under the action of the processes such as doping, etching and the like.
As microwave frequencies increase, integrated circuits become larger in size but smaller in size. The improvement of the integration degree can lead the volume of the chip to be smaller, and the power consumption to be reduced, but the test difficulty is improved along with the improvement. The method realizes precise test and improves design by the method to form a complete feedback flow, and has important significance for the development of semiconductor chips. The non-contact semiconductor testing method based on the microwave near field provides a new testing idea for the semiconductor device testing. Microwave probes are important in testing as a module that functions directly with a semiconductor chip integrated circuit during testing. The microwave probe transmits information of a semiconductor chip or an integrated circuit in a test, can scan the surface of the whole device, can acquire the information of the whole device under the cooperation of a mechanical device, analyzes possible problems of the device and improves the production efficiency of the device. The currently used method for testing the integrated circuit of the semiconductor chip is an on-chip test, which judges the reliability of the device by testing the electrical performance of the integrated circuit or tests a certain specific frequency by using a microwave near-field microscope. There are three main limitations to these approaches: firstly, when a semiconductor chip integrated circuit is subjected to on-chip testing, the testing of a contact mode can damage a device to a certain extent, so that the service life of the device is influenced; secondly, probes used by the microwave near-field microscope type test method are mostly point-frequency probes, and the test requirements under various conditions cannot be met; thirdly, when the semiconductor chip integrated circuit is tested, the cost can be greatly reduced by accurately judging the problem, and the problem can not be accurately positioned in chip testing and common dot frequency testing.
Disclosure of Invention
The invention provides a device to be tested which can carry out nondestructive and broadband test in the semiconductor chip integrated circuit test, and solves the problems that the device is damaged, different test requirements cannot be met, and the device problem can be accurately positioned.
The invention aims to realize the structure of the broadband coaxial probe for the microwave near-field test, and is characterized in that: the coaxial switching test device comprises an outer conductor (1), a dielectric material (2), an inner conductor (3), a test needle (4), a coaxial switching outer conductor (5) and a coaxial switching central medium (6), wherein the dielectric material (2) comprises an upper medium (21) and a lower medium (22); the inner conductor (3) is wrapped by an upper medium (21), and the outer conductor (1) is wrapped by the upper medium (21) of the medium material (2); the test needle (4) is wrapped by a lower medium (22), the connecting surface of an upper medium (21) and the lower medium (22) and the bottom layer surface of the outer conductor (1) are on the same horizontal plane, the top layer surface of the outer conductor (1) and the connecting surfaces of the coaxial switching center medium (6) and the upper medium (21) are on the same horizontal plane, and the coaxial switching center medium (6) is wrapped by a coaxial switching outer conductor (5); the sizes of the outer conductor (1), the upper medium (21) and the inner conductor (3) are gradually increased from top to bottom, the size of the upper end of the testing needle (4) is equal to the size of the shape of the lower end of the inner conductor (3), the inner part of the coaxial switching center medium (6) is of a hollow structure, and the central line of the hollow structure, the central line of the inner conductor (3) and the central line of the testing needle (4) are overlapped; when the probe is used, microwave signals are transmitted to the needle point of the test needle (4) through the coaxial cable, the microwave signals are radiated by the needle point, a semiconductor integrated circuit sample to be tested is placed in the field intensity radiation range of the needle point, the information of the semiconductor device is displayed in the form of microwave parameters through the electric signal coupling of the field intensity, and the information of the semiconductor device is obtained through analyzing the parameters.
The outer conductor (1), the medium material upper medium (21) and the inner conductor (3) are of tapered gradual change structures from top to bottom, and the outer conductor (1), the upper medium (21) and the inner conductor (3) form seamless wrapping from outside to inside in sequence.
The outer conductor (1), the upper medium (21) and the inner conductor (3) are of a curved surface gradual change structure from top to bottom, and the outer conductor (1), the upper medium (21) and the inner conductor (3) form seamless wrapping from outside to inside in sequence.
The upper medium (21) and the lower medium (22) in the medium material (2) are of an integral structure, and the lower medium (22) is an extending part of the lower end face of the outer conductor (1).
The shape of the lower medium (22) and the shape of the test needle (4) are reduced from top to bottom; the material of the test needle is tungsten.
The lower medium (22) and the test needle (4) are of a central symmetrical structure.
The test needle (4) penetrates out of the bottom of the central line of the lower medium (22), the needle point (41) is exposed and extends out of the lower bottom surface of the lower medium (22), and the upper end surface of the test needle (4) is in contact with the lower end surface of the inner conductor (3).
The coaxial switching outer conductor (5) and the coaxial switching central medium (6) are of coaxial structures and have the same height.
The outer diameter of the coaxial switching center medium (6) is smaller than or equal to the inner diameter of the coaxial switching outer conductor (5), the outer diameter and the inner diameter of the coaxial switching outer conductor (5) are the same as the outer diameter and the inner diameter of the small end of the outer conductor (1), and the outer diameter of the coaxial switching center medium (6) is the same as the diameter of the small end of the upper medium (21).
The coaxial switching outer conductor (5) is made of copper materials and coaxial materials of the coaxial cable, the outer wall of the coaxial switching outer conductor is a circle of threads and is used for being connected with a standard coaxial line, a central coaxial switching central medium (6) in the coaxial switching outer conductor is made of polytetrafluoroethylene which is the same as the coaxial line, and a hollow structure which is the same as the coaxial line inner conductor and the coaxial line upper end inner conductor in size is formed in the polytetrafluoroethylene in a hollow mode.
Compared with the prior art, the invention has the advantages that:
the novel broadband coaxial probe structure acts on a microwave near field, radiates an electric field through the needle point, forms electric field coupling between the needle point part and a semiconductor device, feeds back a result after a signal radiated by the needle point and device information are coupled to a receiving device, keeps the needle point and the semiconductor device in a non-contact state in the whole test process, and effectively solves the problem of damage to the semiconductor device caused by contact type test.
2 this novel coaxial probe structure of wide band includes outer conductor, dielectric material, inner conductor for the upper dielectric through designing overall structure and be the toper, expands the available frequency of probe, even semiconductor device's performance can change because of the difference of frequency, and this probe can both satisfy semiconductor device's frequency test demand in the frequency range of broad, can satisfy the test of the semiconductor chip integrated circuit of multiple different materials and different frequency characteristics.
3 this novel coaxial probe structure of wide band is the same with the coaxial line size through designing its top structure to add the interface that links to each other with the coaxial line in the upper end of probe, can directly be connected with SMA public head in actual application, made things convenient for being connected of probe and circuit, make whole test more simple and convenient.
4 this novel coaxial probe structure of wide band is through the part of its needle point of design, the needle point portion is introduced to the inside field of coaxial structure, in needle point portion alright carry out electric field coupling with the semiconductor chip integrated circuit of being surveyed, because semiconductor chip's high integration, the material of selecting its needle point to use is tungsten, tungsten can reach less radius in the processing, but the manual regulation of radius size, the needle point is littleer with the electric field scope of control radiation-out, also can satisfy to wherein less device test to highly integrated circuit, higher spatial resolution has.
Drawings
FIG. 1 is a schematic cross-sectional view of a novel broadband coaxial probe for microwave near-field testing according to the present invention;
FIG. 2 is a three-dimensional schematic view of the structure of example 1 of the present invention;
FIG. 3 is a schematic view of the field radiation at the tip of the needle of the present invention;
FIG. 4 is a schematic diagram of the signal transmission and signal reflection effects of a probe of a certain size according to the present invention;
FIG. 5 is a three-dimensional schematic diagram of the structure of example 1 of the present invention.
In the figure: 1-probe outer conductor, 2-dielectric material, 21-upper dielectric, 22-lower dielectric, 3-probe inner conductor, 4-test needle, 41-needle point, 5-coaxial switching outer conductor and 6-coaxial switching center dielectric.
Detailed Description
In order to make the objects, technical approaches and advantages of the present invention more objective and clear, the present invention is further described in detail below with reference to examples. It is to be understood that the described embodiments are merely a few embodiments of the invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example 1
As shown in fig. 1 and fig. 2, a broadband coaxial probe structure for microwave near-field testing is characterized in that: the coaxial adapter comprises an outer conductor 1, a dielectric material 2, an inner conductor 3, a test needle 4, a coaxial adapter outer conductor 5 and a coaxial adapter central medium 6, wherein the dielectric material 2 comprises an upper medium 21 and a lower medium 22; the inner conductor 3 is wrapped by an upper medium 21, and the outer conductor 1 is wrapped by the upper medium 21 of the medium material 2; the test needle 4 is wrapped by a lower medium 22, the connecting surface of the upper medium 21 and the lower medium 22 and the bottom layer surface of the outer conductor 1 are on the same horizontal plane, the top layer surface of the outer conductor 1 and the connecting surfaces of the central medium 6 and the upper medium 21 are on the same horizontal plane, and the central medium 6 is wrapped by a coaxial switching outer conductor 5; the sizes of the outer conductor 1, the dielectric material upper medium 21 and the inner conductor 3 are gradually increased from top to bottom, the size of the upper end of the test needle 4 is equal to the size of the shape of the lower end of the inner conductor 3, the inside of the central medium 6 is of a hollow structure, and the central line of the hollow structure, the central line of the inner conductor 3 and the central line of the test needle 4 are overlapped; when the probe is used, microwave signals are transmitted to the needle point of the test needle 4 through the coaxial cable, the microwave signals are radiated by the needle point, a semiconductor integrated circuit sample to be tested is placed in the field intensity radiation range of the needle point, the information of the semiconductor device is displayed in the form of microwave parameters through the electric signal coupling of the field intensity, and the information of the semiconductor device is obtained through analyzing the parameters; the outer conductor 1, the dielectric material upper medium 21 and the inner conductor 3 are of a tapered gradual change structure, and the outer conductor 1, the dielectric material upper medium 21 and the inner conductor 3 are sequentially wrapped in a seamless manner from outside to inside.
The upper dielectric 21 and the lower dielectric 22 in the dielectric material 2 are of an integral structure, and the lower dielectric 22 is an extension of the lower end face of the outer conductor 1.
The lower medium 22 and the test needle 4 have their shapes converging from top to bottom to reduce.
The lower medium 22 and the test needle 4 are in a central symmetrical structure.
The test needle 4 penetrates out of the bottom of the central line of the lower medium 22, the needle point 41 is exposed and extends out of the lower bottom surface of the lower medium 22, and the upper end surface of the test needle 4 is in contact with the lower end surface of the inner conductor 3.
The coaxial switching outer conductor 5 and the central medium 6 are coaxial structures and have the same height.
The outer diameter of the central medium 6 is less than or equal to the inner diameter of the coaxial switching outer conductor 5, the outer diameter and the inner diameter of the coaxial switching outer conductor 5 are the same as the outer diameter and the inner diameter of the small end of the outer conductor 1, and the outer diameter of the central medium 6 is the same as the diameter of the small end of the upper medium 21.
The material of the outer conductor 5 is the same as the coaxial line material of the coaxial cable, the outer wall of the outer conductor is a circle of threads and is used for connecting with a standard coaxial line, the inner central medium material 6 of the outer conductor is made of polytetrafluoroethylene which is the same as the coaxial line, and a hollow structure with the same size of the coaxial line inner conductor and the inner conductor at the upper end of the probe is formed in the polytetrafluoroethylene.
Example 2
As shown in fig. 1 and 5, a broadband coaxial probe structure for microwave near-field testing is characterized in that: the coaxial adapter comprises an outer conductor 1, a dielectric material 2, an inner conductor 3, a test needle 4, a coaxial adapter outer conductor 5 and a coaxial adapter central medium 6, wherein the dielectric material 2 comprises an upper medium 21 and a lower medium 22; the inner conductor 3 is wrapped by an upper medium 21, and the outer conductor 1 is wrapped by the upper medium 21 of the medium material 2; the test needle 4 is wrapped by a lower medium 22, the connecting surface of the upper medium 21 and the lower medium 22 and the bottom layer surface of the outer conductor 1 are on the same horizontal plane, the top layer surface of the outer conductor 1 and the connecting surfaces of the central medium 6 and the upper medium 21 are on the same horizontal plane, and the central medium 6 is wrapped by a coaxial switching outer conductor 5; the sizes of the outer conductor 1, the dielectric material upper medium 21 and the inner conductor 3 are gradually increased from top to bottom, the size of the upper end of the test needle 4 is equal to the size of the shape of the lower end of the inner conductor 3, the inside of the central medium 6 is of a hollow structure, and the central line of the hollow structure, the central line of the inner conductor 3 and the central line of the test needle 4 are overlapped; when the probe is used, microwave signals are transmitted to the needle point of the test needle 4 through the coaxial cable, the microwave signals are radiated by the needle point, a semiconductor integrated circuit sample to be tested is placed in the field intensity radiation range of the needle point, the information of the semiconductor device is displayed in the form of microwave parameters through the electric signal coupling of the field intensity, and the information of the semiconductor device is obtained through analyzing the parameters; the structure of the outer conductor 1, the medium material upper medium 21 and the inner conductor 3 is gradually increased from top to bottom and is a curved surface gradual change structure, and the outer conductor 1, the medium material upper medium 21 and the inner conductor 3 are sequentially wrapped in a seamless mode from outside to inside.
The upper dielectric 21 and the lower dielectric 22 in the dielectric material 2 are of an integral structure, and the lower dielectric 22 is an extension of the lower end face of the outer conductor 1.
The lower medium 22 and the test needle 4 have their shapes converging from top to bottom to reduce.
The lower medium 22 and the test needle 4 are in a central symmetrical structure.
The test needle 4 penetrates out of the bottom of the central line of the lower medium 22, the needle point 41 is exposed and extends out of the lower bottom surface of the lower medium 22, and the upper end surface of the test needle 4 is in contact with the lower end surface of the inner conductor 3.
The coaxial switching structure connects the probe structure with the coaxial line, the size of the inner hole is equal to that of the inner conductor of the SMA connecting line male head, the middle filling material is polytetrafluoroethylene, the size of the middle filling material is the same as that of the coaxial line, and the copper thread is arranged outside the coaxial line and connected with the coaxial line. The coaxial switching outer conductor 5 and the central medium 6 are coaxial structures and have the same height.
The outer diameter of the central medium 6 is less than or equal to the inner diameter of the coaxial switching outer conductor 5, the outer diameter and the inner diameter of the coaxial switching outer conductor 5 are the same as the outer diameter and the inner diameter of the small end of the outer conductor 1, and the outer diameter of the central medium 6 is the same as the diameter of the small end of the upper medium 21.
The outer conductor is made of copper, the outer conductor 5 is made of the same material as the coaxial wire of the coaxial cable, the outer wall of the outer conductor is provided with a circle of threads for connecting with a standard coaxial wire, the inner central medium material 6 of the outer conductor is made of polytetrafluoroethylene which is the same as the coaxial wire, and a hollow structure with the same size as the inner conductor of the coaxial wire and the inner conductor at the upper end of the probe is formed in the polytetrafluoroethylene.
The material of the test needle is selected from tungsten which has higher hardness, so that the test needle is easy to process smaller tip size, and the test needle is hard and not easy to damage in the using process so as to influence the test result. The test needle is divided into two parts in the whole probe structure, one part is wrapped in an external medium material, the other part is exposed to serve as an information transmission structure of the whole probe and a semiconductor chip integrated circuit, the test needle conducts the field intensity in the upper medium conical structure to the lower medium and radiates the field intensity through the needle point, and due to the fact that the distance of the field intensity function is small, a microwave near field is formed and the semiconductor device is tested in the range.
As shown in fig. 3 and 4, the result is obtained by performing electromagnetic simulation on the probe structure in simulation software, and as can be seen from the simulation result, the fields radiated by the probe structure are all concentrated on the tip portion. The variation of the field intensity is gradually reduced from the center to the outside according to the simulation result, and the semiconductor device to be tested has to be controlled within the electric field radiation range of the needle point in order to ensure that the corresponding information can be tested.
The coaxial switching part is used for switching the probe main body structure and an external coaxial line, the outer conductor 5 is made of copper material and is the same as the coaxial line, and the outer wall of the coaxial switching part is provided with a circle of threads for connecting with a standard coaxial line. The inner central medium material 6 is made of polytetrafluoroethylene which is the same as the coaxial line, a hollow structure with the same size of the coaxial line inner conductor and the inner conductor at the upper end of the probe is formed in the polytetrafluoroethylene, the coaxial line is connected with the coaxial switching structure in an experiment, and the inner conductor of the SMA male connector is connected with the probe inner conductor through the hollow structure.
The working principle is as follows: when the probe is used, a signal source is externally connected, microwave signals are transmitted to the probe through a coaxial cable, the coaxial switching part at the upper end transfers the signals from the coaxial cable to the probe structure at the lower end, the microwave signals are radiated out by the needle point, a semiconductor integrated circuit sample to be tested is placed in the field intensity radiation range of the needle point, the information of the semiconductor device is displayed in the form of microwave parameters through the electric signal coupling of the field intensity, and the information of the semiconductor device is obtained through analyzing the parameters.
The components and structures of the present embodiments that are not described in detail are well known in the art and do not constitute essential structural elements or elements.
Claims (10)
1. A broadband coaxial probe structure for microwave near field test is characterized in that: the coaxial switching test device comprises an outer conductor (1), a dielectric material (2), an inner conductor (3), a test needle (4), a coaxial switching outer conductor (5) and a coaxial switching central medium (6), wherein the dielectric material (2) comprises an upper medium (21) and a lower medium (22); the inner conductor (3) is wrapped by an upper medium (21), and the outer conductor (1) is wrapped by the upper medium (21) of the medium material (2); the test needle (4) is wrapped by a lower medium (22), the connecting surface of an upper medium (21) and the lower medium (22) and the bottom layer surface of the outer conductor (1) are on the same horizontal plane, the top layer surface of the outer conductor (1) and the connecting surfaces of the coaxial switching center medium (6) and the upper medium (21) are on the same horizontal plane, and the coaxial switching center medium (6) is wrapped by a coaxial switching outer conductor (5); the sizes of the outer conductor (1), the upper medium (21) and the inner conductor (3) are gradually increased from top to bottom, the size of the upper end of the testing needle (4) is equal to the size of the shape of the lower end of the inner conductor (3), the inner part of the coaxial switching center medium (6) is of a hollow structure, and the central line of the hollow structure, the central line of the inner conductor (3) and the central line of the testing needle (4) are overlapped; when the probe is used, microwave signals are transmitted to the needle point of the test needle (4) through the coaxial cable, the microwave signals are radiated by the needle point, a semiconductor integrated circuit sample to be tested is placed in the field intensity radiation range of the needle point, the information of the semiconductor device is displayed in the form of microwave parameters through the electric signal coupling of the field intensity, and the information of the semiconductor device is obtained through analyzing the parameters.
2. The novel broadband coaxial probe structure for microwave near-field testing according to claim 1, wherein: the outer conductor (1), the medium material upper medium (21) and the inner conductor (3) are of tapered gradual change structures from top to bottom, and the outer conductor (1), the upper medium (21) and the inner conductor (3) form seamless wrapping from outside to inside in sequence.
3. The novel broadband coaxial probe structure for microwave near-field testing according to claim 1, wherein: the outer conductor (1), the upper medium (21) and the inner conductor (3) are of a curved surface gradual change structure from top to bottom, and the outer conductor (1), the upper medium (21) and the inner conductor (3) form seamless wrapping from outside to inside in sequence.
4. The novel broadband coaxial probe structure for microwave near-field testing according to claim 1, wherein: the upper medium (21) and the lower medium (22) in the medium material (2) are of an integral structure, and the lower medium (22) is an extending part of the lower end face of the outer conductor (1).
5. The novel broadband coaxial probe structure for microwave near-field testing according to claim 1, wherein: the shape of the lower medium (22) and the shape of the test needle (4) are reduced from top to bottom; the material of the test needle is tungsten.
6. The novel broadband coaxial probe structure for microwave near-field testing according to claim 1, wherein: the lower medium (22) and the test needle (4) are of a central symmetrical structure.
7. The novel broadband coaxial probe structure for microwave near-field testing according to claim 1, wherein: the test needle (4) penetrates out of the bottom of the central line of the lower medium (22), the needle point (41) is exposed and extends out of the lower bottom surface of the lower medium (22), and the upper end surface of the test needle (4) is in contact with the lower end surface of the inner conductor (3).
8. The novel broadband coaxial probe structure for microwave near-field testing according to claim 1, wherein: the coaxial switching outer conductor (5) and the coaxial switching central medium (6) are of coaxial structures and have the same height.
9. The novel broadband coaxial probe structure for microwave near-field testing according to claim 1, wherein: the outer diameter of the coaxial switching center medium (6) is smaller than or equal to the inner diameter of the coaxial switching outer conductor (5), the outer diameter and the inner diameter of the coaxial switching outer conductor (5) are the same as the outer diameter and the inner diameter of the small end of the outer conductor (1), and the outer diameter of the coaxial switching center medium (6) is the same as the diameter of the small end of the upper medium (21).
10. The novel broadband coaxial probe structure for microwave near-field testing according to claim 1, wherein: the coaxial switching outer conductor (5) is made of copper materials and coaxial materials of the coaxial cable, the outer wall of the coaxial switching outer conductor is a circle of threads and is used for being connected with a standard coaxial line, a central coaxial switching central medium (6) in the coaxial switching outer conductor is made of polytetrafluoroethylene which is the same as the coaxial line, and a hollow structure which is the same as the coaxial line inner conductor and the coaxial line upper end inner conductor in size is formed in the polytetrafluoroethylene in a hollow mode.
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| CN1095483A (en) * | 1994-03-15 | 1994-11-23 | 吉林大学 | Microwave probe for coplanar integrated circuit chip |
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| CN1869711A (en) * | 2005-02-04 | 2006-11-29 | 捷讯研究有限公司 | Probe assembly with multi-directional freedom of motion and mounting assembly therefor |
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| CN107315098A (en) * | 2017-05-27 | 2017-11-03 | 中国电子科技集团公司第十三研究所 | Coplanar test probe of microwave and preparation method thereof |
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- 2021-10-14 CN CN202111196276.8A patent/CN114062736B/en active Active
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|---|---|---|---|---|
| CN1095483A (en) * | 1994-03-15 | 1994-11-23 | 吉林大学 | Microwave probe for coplanar integrated circuit chip |
| US20030030449A1 (en) * | 2000-09-20 | 2003-02-13 | Moreland Robert L. | Apertured probes for localized measurements of a material's complex permittivity and fabrication method |
| CN1869711A (en) * | 2005-02-04 | 2006-11-29 | 捷讯研究有限公司 | Probe assembly with multi-directional freedom of motion and mounting assembly therefor |
| CN102133454A (en) * | 2011-04-25 | 2011-07-27 | 高必有 | Probe for micro-wave and minimally invasive radiator |
| CN107315098A (en) * | 2017-05-27 | 2017-11-03 | 中国电子科技集团公司第十三研究所 | Coplanar test probe of microwave and preparation method thereof |
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