CN114059044A - Film layer growth equipment and film layer growth method - Google Patents
Film layer growth equipment and film layer growth method Download PDFInfo
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- CN114059044A CN114059044A CN202111320299.5A CN202111320299A CN114059044A CN 114059044 A CN114059044 A CN 114059044A CN 202111320299 A CN202111320299 A CN 202111320299A CN 114059044 A CN114059044 A CN 114059044A
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
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Abstract
The embodiment of the application provides a film layer growth device and a film layer growth method, the film layer growth device comprises a reaction chamber and a controller, a base station and a plasma forbidden zone ring are arranged in the reaction chamber, the base station is used for placing a wafer to be processed and the plasma forbidden zone ring, the plasma forbidden zone ring comprises at least one movable part capable of changing in length, the diameter of the wafer to be processed is larger than that of the plasma forbidden zone ring, so that a protective film layer is formed on the edge of the wafer to be processed, the controller adjusts the diameter of the plasma forbidden zone ring through controlling the movable part to change in length, and therefore the range of the wafer surrounded by the plasma forbidden zone ring is changed to change the coverage range of the protective film layer. Therefore, the range of the protective film layer covering the edge of the wafer is adjusted by using the plasma forbidden zone ring with the adjustable diameter, the chamber of the film layer growing equipment does not need to be opened frequently, the plasma forbidden zone rings with different diameters are replaced, and the cost of the semiconductor manufacturing process can be reduced.
Description
Technical Field
The invention relates to the field of semiconductors, in particular to film layer growth equipment and a film layer growth method.
Background
Currently, during a semiconductor manufacturing process, a protective film is usually formed at the edge of a wafer to protect the edge of the wafer from being affected in the following processes. In order to ensure that the protective film is formed only on the edge of the wafer, a Plasma Exclusion Zone Ring (PEZ Ring) is usually used to prevent the protective film from covering the upper and lower surface of the wafer to form the device region, i.e., the Plasma Exclusion Zone Ring is used to protect the middle region of the upper and lower surfaces of the wafer, the middle region will not form the protective film, and the edge of the wafer not protected by the Plasma Exclusion Zone Ring will form the protective film.
When a protective film is formed on the edge of a wafer by using a plasma forbidden zone ring, the problem that a chamber of film growth equipment is frequently opened and plasma forbidden zone rings with different diameters are replaced exists, so that the cost of a semiconductor manufacturing process is increased.
Disclosure of Invention
In view of the above, an object of the present invention is to provide a film layer growth apparatus and a film layer growth method, which utilize a plasma forbidden zone ring with an adjustable diameter to solve the problem of frequently opening a chamber of the film layer growth apparatus and replacing the plasma forbidden zone ring with different diameters.
The embodiment of the application provides a film growth equipment, includes: the plasma processing device comprises a reaction chamber and a controller, wherein the reaction chamber comprises a base station and a plasma forbidden zone ring; the plasma forbidden zone ring comprises at least one movable part with changeable length;
the base station is used for placing a wafer to be processed and the plasma forbidden zone ring, and the diameter of the wafer to be processed is larger than that of the plasma forbidden zone ring;
the controller is used for adjusting the diameter of the plasma forbidden zone ring by controlling the movable part to change the length.
Optionally, the movable portion comprises a first end and a second end, the first end is a hollow end, the diameter of the first end is larger than that of the second end, and the second end extends into the first end;
the controller is used for controlling the length change of the movable part by controlling the distance of the second end extending into the first end.
Optionally, the method further comprises: a sensor;
the sensor is positioned in the reaction chamber and used for detecting the diameter of the plasma forbidden zone ring.
Optionally, the plasma exclusion zone ring comprises a first exclusion zone ring and a second exclusion zone ring;
the first forbidden zone ring is positioned above the first surface of the wafer to be processed, and the distance between the first forbidden zone ring and the first surface of the wafer to be processed is a preset distance; the first surface is provided with a storage unit;
the second forbidden zone ring is located below a second face of the wafer to be processed and is in contact with the wafer to be processed, and the second face is a surface opposite to the first face.
Optionally, the diameter of the plasma exclusion zone ring varies in a range from 290 mm to 300 mm.
Optionally, the plasma confinement zone ring is a hollow structure.
Optionally, the material of the plasma exclusion zone ring is ceramic or alumina.
The embodiment of the present application further provides a film layer growth method, where the film layer growth apparatus according to any one of the above embodiments is used, including:
acquiring a diameter value of a plasma forbidden zone ring input by a user;
adjusting the diameter of the plasma forbidden zone ring according to the diameter value;
and introducing reaction gas into the reaction chamber to form a protective film layer on the edge of the wafer to be processed, wherein the edge of the wafer to be processed comprises the side wall of the wafer to be processed, the outer edge area of the first surface of the wafer to be processed and the outer edge area of the second surface of the wafer to be processed, and the first surface and the second surface are opposite surfaces of the wafer to be processed.
Optionally, before adjusting the diameter of the plasma exclusion zone ring according to the diameter value, the method further includes:
detecting a current diameter of the plasma exclusion zone ring with a sensor;
and if the current diameter is different from the diameter value of the plasma forbidden zone ring input by a user, executing the subsequent step of adjusting the diameter of the plasma forbidden zone ring.
Optionally, after adjusting the diameter of the plasma exclusion zone ring according to the diameter value, the method further includes:
detecting a current diameter of the plasma exclusion zone ring with a sensor;
and if the current diameter is the same as the diameter value of the plasma forbidden zone ring input by a user, performing the subsequent step of introducing reaction gas into the reaction chamber.
Optionally, the material of the protective film layer is an insulating material.
The embodiment of the present application also provides a computer-readable storage medium, which includes instructions, when executed on a computer, cause the computer to perform the method according to any one of the above embodiments.
The embodiment of the application provides a film layer growth device, including reaction chamber and controller, including base station and plasma forbidden zone ring in the reaction chamber, the base station is used for placing pending wafer and plasma forbidden zone ring, plasma forbidden zone ring includes at least one movable part that can carry out length variation, the diameter of pending wafer is greater than the diameter of plasma forbidden zone ring, so that form the protection rete at the edge of pending wafer, the controller carries out length variation through controlling the movable part and adjusts the diameter of plasma forbidden zone ring, thereby change the scope that plasma forbidden zone ring surrounds the wafer and change the coverage of protection rete. Therefore, the range of the protective film layer covering the edge of the wafer is adjusted by using the plasma forbidden zone ring with the adjustable diameter, the chamber of the film layer growing equipment does not need to be opened frequently, the plasma forbidden zone rings with different diameters are replaced, and the cost of the semiconductor manufacturing process can be reduced.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly introduced below, and it is obvious that the drawings in the following description are some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a wafer according to an embodiment of the present disclosure;
FIG. 2 is a schematic structural diagram of a film layer growth apparatus according to an embodiment of the present disclosure;
FIG. 3 is a schematic diagram of a plasma confinement zone ring according to an embodiment of the present disclosure;
FIG. 4 is a schematic diagram of another embodiment of a plasma confinement zone ring;
FIG. 5 is a diagram illustrating a position relationship of a ring of a plasma confinement zone according to an embodiment of the present application;
FIG. 6 is a schematic structural diagram of another film growth apparatus according to an embodiment of the present disclosure;
fig. 7 is a schematic flow chart illustrating a film layer growth method according to an embodiment of the present disclosure.
Detailed Description
In order to make the aforementioned objects, features and advantages of the present application more comprehensible, embodiments accompanying the present application are described in detail below with reference to the accompanying drawings.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present application, but the present application may be practiced in other ways than those described herein, and it will be apparent to those of ordinary skill in the art that the present application is not limited by the specific embodiments disclosed below.
The present application will be described in detail with reference to the drawings, wherein the cross-sectional views illustrating the structure of the device are not enlarged partially in general scale for convenience of illustration, and the drawings are only examples, which should not limit the scope of the present application. In addition, the three-dimensional dimensions of length, width and depth should be included in the actual fabrication.
Referring to fig. 1, a cross-sectional view of a wafer according to an embodiment of the present invention is provided, in which an edge of a wafer 100 includes a wafer sidewall 101, a peripheral edge region 102 of a first side of the wafer, and a peripheral edge region 103 of a second side of the wafer, the first side and the second side being opposite surfaces of the wafer, the peripheral edge region of the wafer being a region beyond a predetermined value from a center of the wafer, for example, a diameter of the wafer is 300 mm, and a region beyond 145 mm from the center of the wafer is the peripheral edge region of the wafer.
In fig. 1, the areas outside the dotted lines represent the outer edge area of the wafer, the area in the middle of the dotted lines represents the middle area of the wafer, and the subsequent structural diagrams are represented in the same way, and since fig. 1 is a cross-sectional view, the outer edge area of the wafer is actually located on both sides of the middle area of the wafer, and an annular area surrounding the middle area, such as an annular area, can be formed.
When the protective film 110 is formed on the edge of the wafer 100, the protective film 110 generally covers all of the sidewall 101 of the wafer, the protective film 110 also covers the outer edge 102 of the first side of the wafer and the outer edge 103 of the second side of the wafer, namely, the protective film layer extends to the middle area of the first surface and the second surface of the wafer to a certain extent, the extension distance of the protective film layer is calculated from the side wall of the wafer until the area which is not covered by the protective film layer stops, the extension distance of the protective film layer is too short, this may result in insufficient protection at the edge of the wafer, and the protective film layer extending over too long a distance may result in the protective film layer covering the middle areas of the first and second sides of the wafer, the device region is adversely affected, for example, when the protective film layer covers the region where the channel hole is located, the etching of the channel hole is difficult, the subsequent preparation is affected, and the yield of the semiconductor device is reduced.
The extension distance of the current protective film varies according to different product requirements, and therefore the size of the Plasma Exclusion Zone Ring 120 (PEZ Ring) needs to be changed accordingly. In the related art, a protective film is formed on the edge of a wafer to protect the edge of the wafer, and when the extension distance of the protective film needs to be changed, a reaction chamber of a film growth device needs to be opened, a plasma forbidden zone ring with a corresponding size needs to be replaced, then the replaced plasma forbidden zone ring is used for protecting the middle areas of the first surface and the second surface of the wafer, and the protective film is formed on the edge of the wafer. The extension distance of the protective film layer can be adjusted to meet the requirements of different wafers in this way, but the cost of the semiconductor manufacturing process is increased in this way.
Based on this, the embodiment of the application provides a film layer growth device, which comprises a reaction chamber and a controller, wherein the reaction chamber comprises a base station and a plasma forbidden zone ring, the base station is used for placing a wafer to be processed and the plasma forbidden zone ring, the plasma forbidden zone ring comprises at least one movable part capable of changing in length, the diameter of the wafer to be processed is larger than that of the plasma forbidden zone ring so as to form a protective film layer on the edge of the wafer to be processed, and the controller adjusts the diameter of the plasma forbidden zone ring by controlling the movable part to change in length, so that the range of the plasma forbidden zone ring surrounding the wafer is changed to change the coverage range of the protective film layer. Therefore, the range of the protective film layer covering the edge of the wafer is adjusted by using the plasma forbidden zone ring with the adjustable diameter, the chamber of the film layer growing equipment does not need to be opened frequently, the plasma forbidden zone rings with different diameters are replaced, and the cost of the semiconductor manufacturing process can be reduced.
For a better understanding of the technical solutions and effects of the present application, specific embodiments will be described in detail below with reference to the accompanying drawings.
Referring to fig. 2, which is a block diagram of a film growth apparatus according to an embodiment of the present disclosure, a film growth apparatus 200 according to an embodiment of the present disclosure includes a reaction chamber 210 and a controller 220, where the reaction chamber 210 is a chamber for processing a wafer 230 to be processed, and the reaction chamber 210 according to an embodiment of the present disclosure may be a chamber for forming a protective film on an edge of the wafer 230 to be processed. The controller 220 may be located outside the reaction chamber 210.
In the embodiment of the present application, the reaction chamber 210 includes a base 211 and a plasma exclusion zone ring 212, and the base 211 is used for placing the wafer 230 to be processed and the plasma exclusion zone ring 212. The diameter of the plasma exclusion zone ring 212 is smaller than that of the wafer 230 to be processed, so that the middle region of the wafer 230 to be processed is protected by the plasma exclusion zone ring 212 from being covered with the protective film layer, and the protective film layer is covered only on the edge region of the wafer 230 to be processed. The plasma exclusion zone ring 212 is an annular structure that includes an inner annular diameter and an outer annular diameter, typically the outer annular diameter of the plasma exclusion zone ring 212 is smaller than the diameter of the wafer 230 to be processed. The diameter of the plasma exclusion zone ring 212 is primarily based on the inner ring diameter when actually adjusting.
With continued reference to fig. 1, the edge of the wafer 230 to be processed includes a sidewall 101 of the wafer 230 to be processed, a peripheral edge region 102 of a first side of the wafer 230 to be processed, and a peripheral edge region 103 of a second side of the wafer 230 to be processed, the first side and the second side being opposite surfaces of the wafer 230 to be processed, the peripheral edge region of the wafer 230 to be processed being a region beyond a predetermined value from the center of the wafer 230 to be processed, for example, the wafer 230 to be processed has a diameter of 300 mm, and the region beyond 145 mm from the center of the wafer 230 to be processed is the peripheral edge region of the wafer 230 to be processed.
In the embodiment of the present application, the plasma confinement zone ring 212 includes at least one movable portion 212-1 with a variable length, i.e., when the length of the movable portion 212-1 is varied, the diameter of the plasma confinement zone ring 212 is correspondingly varied. The number of the movable portions 212-1 may be one or multiple, and referring to fig. 3, a schematic view of a plasma confinement zone ring provided in the embodiment of the present application is shown, in which one movable portion 212-1 is taken as an example. Referring to fig. 4, which is a schematic view of another plasma exclusion zone ring provided in the embodiment of the present application, the schematic view takes 3 moving parts 212-1 as an example, and it can be seen from the figure that when the number of the moving parts 212-1 is multiple, the multiple moving parts 212-1 can be uniformly distributed in the plasma exclusion zone ring 212, the diameter of the plasma exclusion zone ring 212 can be adjusted by simultaneously changing the lengths of the multiple moving parts 212-1, and the diameter of the plasma exclusion zone ring 212 can also be adjusted by adjusting the length of one or more of the multiple moving parts 212-1. Thus, the diameter of the plasma exclusion zone ring 212 is adjusted by the plurality of movable portions 212-1, so that the plasma exclusion zone ring 212 has a better roundness at any adjustable diameter.
In practical applications, the length adjustment ranges of the plurality of movable portions 212-1 may be the same, and the length adjustment of each movable portion 212-1 may also be the same, so as to finally achieve a uniform diameter adjustment for the plasma exclusion zone ring 212.
As a possible implementation manner, the movable portion 212-1 includes a first end 10 and a second end 20, the first end 10 may be a hollow end, the second end 20 may be a hollow end, or a solid end, when the cross section of the plasma exclusion zone ring 212 is circular, the diameter of the first end 10 is larger than that of the second end 20, so that the second end 20 extends into the first end 10. When the distance that the second end 20 extends into the first end 10 changes, the length of the movable portion 212-1 changes accordingly, and the diameter of the plasma confinement zone ring 212 changes accordingly. That is, it is the change in the diameter of the plasma exclusion zone ring 212 that is achieved by extending the second end 20 into the first end 10, and therefore, at least the first end 10 of the movable portion 212-1 is a hollow structure.
In the embodiment of the present application, the portion of the plasma confinement zone ring 212 other than the movable portion 212-1 may be a solid structure or a hollow structure.
As an example, the first end 10 of the movable portion 212-1 is a hollow end, the second end 20 is also a hollow end, and the portions of the plasma exclusion zone ring 212 other than the movable portion 212-1 may also be hollow structures, that is, each portion of the plasma exclusion zone ring 212 is a hollow structure, and the manufacturing mold of the plasma exclusion zone ring 212 with a hollow structure is easier to form than the manufacturing mold of the plasma exclusion zone ring 212 with a partially hollow structure and a partially solid structure, which is beneficial to forming the plasma exclusion zone ring 212 and saving the manufacturing cost of the plasma exclusion zone ring 212.
In the embodiment of the present application, the controller 220 is configured to adjust the diameter of the plasma exclusion zone ring 212 by controlling the length of the movable portion 212-1 to change, for example, the controller 220 can control the length of the movable portion 212-1 to change by controlling the distance that the second end 20 extends into the first end 10, so as to finally adjust the diameter of the plasma exclusion zone ring 212. The greater the distance that the second end 20 extends into the first end 10, the smaller the diameter of the plasma confinement zone ring 212, and conversely, the smaller the distance that the second end 20 extends into the first end 10, the larger the diameter of the plasma confinement zone ring 212.
In practical applications, a movement control device may be disposed on the first end 10, and the movement control device receives a command sent by the controller 220 to adjust the diameter of the plasma exclusion zone ring 212, and can drive the first end 10 to move, and in the process of moving the first end 10, the distance that the second end 20 extends into the first end 10 can be changed, and finally the diameter of the plasma exclusion zone ring 212 is changed. After the predetermined diameter of the plasma exclusion zone ring 212 is obtained by the movement control device, the movement control device can also fix the position of the first end 10, so as to fix the distance that the second end 20 extends into the first end 10, and the diameter of the plasma exclusion zone ring 212 is not changed in the process, so as to avoid affecting the process effect.
In an embodiment of the present invention, the plasma exclusion zone ring 212 includes a first exclusion zone ring 212a and a second exclusion zone ring 212b, and referring to fig. 5, the plasma exclusion zone ring is a position relationship diagram of the plasma exclusion zone ring provided in the embodiment of the present invention, the first exclusion zone ring 212a is located above a first surface of the wafer 230 to be processed, a distance between the first surface of the wafer 230 to be processed and the first surface of the wafer 230 to be processed is a predetermined distance, the predetermined distance may range from 5 mm to 6 mm, and the second exclusion zone ring 212b is located below a second surface of the wafer 230 to be processed and contacts the wafer 230 to be processed, wherein the first surface and the second surface are opposite surfaces of the wafer 230 to be processed, and the first surface may be a side surface on which a memory cell is to be formed subsequently.
That is, the first exclusion zone ring 212a is not in close contact with the wafer 230 to be processed, and is located above the wafer 230 to be processed, and the wafer 230 to be processed is placed on the second exclusion zone ring 212 b. In practical applications, the diameters of the first forbidden zone ring 212a and the second forbidden zone ring 212b are generally the same, and the centers of the first forbidden zone ring 212a, the second forbidden zone ring 212b and the wafer 230 to be processed are located on the same straight line.
In the embodiment of the present application, the plasma exclusion zone ring 212 may protect the central region of the wafer 230 to be processed from being covered by the protection film layer, and the protection film layer only covers the edge of the wafer 230 to be processed, so when the diameter of the plasma exclusion zone ring 212 changes, the extension distance of the protection film layer covering the outer edge region of the wafer 230 to be processed also changes correspondingly. When the diameter of the plasma exclusion zone ring 212 is smaller, the middle area of the wafer 230 to be processed protected by the plasma exclusion zone ring 212 becomes smaller, the extension distance of the protective film layer covering the outer edge area of the wafer 230 to be processed becomes larger, and when the diameter of the plasma exclusion zone ring 212 becomes larger, the middle area of the wafer 230 to be processed protected by the plasma exclusion zone ring 212 becomes larger, and the extension distance of the protective film layer covering the outer edge area of the wafer 230 to be processed becomes smaller. The diameter of the plasma exclusion zone ring may range from 290 mm to 300 mm. The diameter of the plasma exclusion zone ring can be set to 300 mm at the maximum, and the diameter of the wafer used in the semiconductor manufacturing process is usually 300 mm, so if the diameter of the plasma exclusion zone ring is larger than the diameter of the wafer, the protective film layer cannot be formed on the edge of the wafer. The minimum diameter of the plasma forbidden zone ring can be set to 290 mm, since the diameter of the wafer used at present is usually 300 mm, the region within 145 mm from the center of the wafer is the region where devices are formed, and the region beyond 145 mm from the center of the wafer is the non-device region, if the diameter of the plasma forbidden zone ring is less than 290 mm, the protective film layer will cover the region where devices are formed on the wafer, which results in the reduction of the yield of semiconductor devices.
In an embodiment of the present application, referring to fig. 6, which is a schematic structural diagram of another film growth apparatus provided in an embodiment of the present application, the film growth apparatus 200 further includes a sensor 610, the sensor 610 is located in the reaction chamber 210, and the sensor 610 is connected to the controller 220 for detecting a diameter of the plasma confinement zone 212. In particular, the sensor 610 may be a distance sensor.
The purpose of the sensor 610 in the film layer growth apparatus 200 is to provide timely feedback on the diameter of the plasma exclusion zone ring 212 to avoid the situation where the diameter of the plasma exclusion zone ring 212 is not adjusted or is not adjusted completely. The sensor 610 may be positioned in the reaction chamber 210 at a location that facilitates detection of the diameter of the plasma exclusion zone ring 212, such as may be located at the top of the reaction chamber 210.
As an example, a sensor 610 is located at the top of the reaction chamber 210 opposite the wafer 230 to be processed to facilitate detection of the diameter of the plasma exclusion zone ring 212.
In the embodiment of the present application, the material of the plasma exclusion zone ring 212 may be ceramic or alumina, and when the diameter adjustment range of the plasma exclusion zone ring 212 is small, the ceramic material or alumina material may be selected, and when the diameter adjustment range of the plasma exclusion zone ring 212 is large, the alumina material may be selected.
The above detailed description is made on the film layer growth apparatus provided in the embodiment of the present application, and in addition, the embodiment of the present application also provides a method for growing a film layer by using the film layer growth apparatus, which is shown with reference to fig. 7, and the method includes:
s101, acquiring a diameter value of the plasma forbidden zone ring input by a user.
In the embodiment of the present application, a user may set the diameter value of the plasma exclusion zone ring 212 according to the actual process condition, and the controller 220 of the film growth apparatus 200 obtains the diameter value input by the user, so that the plasma exclusion zone ring 212 can protect the middle area of the wafer 230 to be processed, and only the edge of the wafer 230 to be processed is covered with the protective film.
In practical application, the diameter of the wafer 230 to be processed may be determined, the extending distance of the protective film layer covering the edge of the wafer to be processed may be determined, the range of the middle area protected by the plasma exclusion zone ring 212 may be obtained according to the diameter of the wafer 230 to be processed and the extending distance of the protective film layer covering the edge of the wafer to be processed, that is, the diameter value of the plasma exclusion zone ring 212 may be obtained, and then the diameter value of the plasma exclusion zone ring 212 may be input by a user.
In practical applications, the area of the protective film layer covering the edge of the wafer to be processed may overlap the middle area protected by the plasma exclusion zone ring 212 by 1 mm to 2 mm, so to ensure that the middle area protected by the plasma exclusion zone ring 212 does not cover the protective film layer, the diameter of the plasma exclusion zone ring 212 may be slightly larger than the middle area by 1 mm to 2 mm.
S102, adjusting the diameter of the plasma forbidden zone ring according to the diameter value.
In the embodiment of the present application, after acquiring the diameter value of the plasma exclusion zone ring 212 input by the user, the controller 230 performs a length change by controlling the movable portion 212-1 according to the diameter value to adjust the diameter of the plasma exclusion zone ring 212.
In practical applications, before the diameter of the plasma exclusion zone ring 212 is adjusted according to the diameter value, the current diameter of the plasma exclusion zone ring 212 may be detected by the sensor 610, if the current diameter is the same as the diameter value of the plasma exclusion zone ring 212 input by the user, the step S103 is directly performed without adjusting the diameter of the plasma exclusion zone ring 212, and if the current diameter is different from the diameter value of the plasma exclusion zone ring 212 input by the user, the step S of subsequently adjusting the diameter of the plasma exclusion zone ring 212 is performed.
In the embodiment of the present application, after the diameter of the plasma exclusion zone ring 212 is adjusted according to the diameter value, the sensor 610 may be further used to detect the current diameter of the plasma exclusion zone ring 212, if the current diameter is the same as the diameter value of the plasma exclusion zone ring 212 input by the user, it indicates that the diameter of the plasma exclusion zone ring 212 has been adjusted, the process directly proceeds to step S103, and a subsequent step of introducing a reaction gas into the reaction chamber is performed, and if the current diameter is different from the diameter value of the plasma exclusion zone ring 212 input by the user, the process of adjusting the diameter of the plasma exclusion zone ring 212 is performed repeatedly until the sensor 610 detects that the current diameter of the plasma exclusion zone ring 212 is the same as the diameter value of the plasma exclusion zone ring 212 input by the user.
S103, introducing reaction gas into the reaction chamber to form a protective film layer on the edge of the wafer to be processed.
In the embodiment of the present application, after the diameter of the plasma confinement zone ring 212 is adjusted, the reaction gas is introduced into the reaction chamber, so that the reaction gas forms a protective film on the edge of the wafer 230 to be processed. As described above, the edge of the wafer 230 to be processed includes the sidewall 101 of the wafer 230 to be processed, the peripheral edge region 102 of the first side of the wafer 230 to be processed, and the peripheral edge region 103 of the second side of the wafer 230 to be processed, the first side and the second side being opposite surfaces of the wafer 230 to be processed, and the peripheral edge region of the wafer 230 to be processed being a region more than a predetermined value from the center of the wafer 230 to be processed, for example, the diameter of the wafer 230 to be processed is 300 mm, and the region more than 145 mm from the center of the wafer 230 to be processed is the peripheral edge region of the wafer 230 to be processed.
In an embodiment of the present application, the processing of the wafer to be processed includes a plurality of process steps, the step of forming the film layer on the edge of the wafer to be processed at least includes a step of detecting a diameter of the plasma exclusion zone ring, a step of adjusting the diameter of the plasma exclusion zone ring, a step of introducing a reaction gas into the reaction chamber, and the like, and each process step is a recipe (recipe). The programs may be procedures of corresponding process steps, which are executed by the controller so as to smoothly form a protective film on the edge of the wafer to be processed.
In an embodiment of the present application, a material of the protective film layer formed on the edge of the wafer to be processed may be an insulating material, such as silicon oxide, and a process of forming the protective film layer may be a Chemical Vapor Deposition (CVD) process.
The embodiment of the application provides a film layer growth device and a film layer growth method, the film layer growth device comprises a reaction chamber and a controller, a base station and a plasma forbidden zone ring are arranged in the reaction chamber, the base station is used for placing a wafer to be processed and the plasma forbidden zone ring, the plasma forbidden zone ring comprises at least one movable part with the length capable of being changed, the diameter of the wafer to be processed is larger than that of the plasma forbidden zone ring, so that a protective film layer is formed on the edge of the wafer to be processed, the controller adjusts the diameter of the plasma forbidden zone ring by controlling the movable part to change the length, and therefore the range of the wafer surrounded by the plasma forbidden zone ring is changed to change the coverage range of the protective film layer. Therefore, the range of the protective film layer covering the edge of the wafer is adjusted by using the plasma forbidden zone ring with the adjustable diameter, the chamber of the film layer growing equipment does not need to be opened frequently, the plasma forbidden zone rings with different diameters are replaced, and the cost of the semiconductor manufacturing process can be reduced.
The foregoing is merely a preferred embodiment of the present application and, although the present application discloses the foregoing preferred embodiments, the present application is not limited thereto. Those skilled in the art can now make numerous possible variations and modifications to the disclosed embodiments, or modify equivalent embodiments, using the methods and techniques disclosed above, without departing from the scope of the claimed embodiments. Therefore, any simple modification, equivalent change and modification made to the above embodiments according to the technical essence of the present application still fall within the protection scope of the technical solution of the present application without departing from the content of the technical solution of the present application.
Claims (12)
1. A film layer growth apparatus, comprising: the plasma processing device comprises a reaction chamber and a controller, wherein the reaction chamber comprises a base station and a plasma forbidden zone ring; the plasma forbidden zone ring comprises at least one movable part with changeable length;
the base station is used for placing a wafer to be processed and the plasma forbidden zone ring, and the diameter of the wafer to be processed is larger than that of the plasma forbidden zone ring;
the controller is used for adjusting the diameter of the plasma forbidden zone ring by controlling the movable part to change the length.
2. The apparatus of claim 1, wherein the movable portion comprises a first end and a second end, the first end being a hollow end, the first end having a diameter greater than a diameter of the second end, the second end extending into the first end;
the controller is used for controlling the length change of the movable part by controlling the distance of the second end extending into the first end.
3. The apparatus of claim 1, further comprising: a sensor;
the sensor is positioned in the reaction chamber and used for detecting the diameter of the plasma forbidden zone ring.
4. The apparatus of claim 1, wherein the plasma exclusion zone ring comprises a first exclusion zone ring and a second exclusion zone ring;
the first forbidden zone ring is positioned above the first surface of the wafer to be processed, and the distance between the first forbidden zone ring and the first surface of the wafer to be processed is a preset distance; the first surface is provided with a storage unit;
the second forbidden zone ring is located below a second face of the wafer to be processed and is in contact with the wafer to be processed, and the second face is a surface opposite to the first face.
5. The apparatus of any of claims 1-4, wherein the diameter of the plasma exclusion zone ring varies in a range from 290 mm to 300 mm.
6. The apparatus of any of claims 1-4, wherein the plasma confinement zone ring is a hollow structure.
7. The apparatus of any of claims 1-4, wherein the material of the plasma exclusion zone ring is ceramic or alumina.
8. A film layer growing method using the film layer growing apparatus of any one of claims 1 to 7, comprising:
acquiring a diameter value of a plasma forbidden zone ring input by a user;
adjusting the diameter of the plasma forbidden zone ring according to the diameter value;
and introducing reaction gas into the reaction chamber to form a protective film layer on the edge of the wafer to be processed, wherein the edge of the wafer to be processed comprises the side wall of the wafer to be processed, the outer edge area of the first surface of the wafer to be processed and the outer edge area of the second surface of the wafer to be processed, and the first surface and the second surface are opposite surfaces of the wafer to be processed.
9. The method of claim 8, further comprising, prior to adjusting the diameter of the plasma exclusion zone ring based on the diameter value:
detecting a current diameter of the plasma exclusion zone ring with a sensor;
and if the current diameter is different from the diameter value of the plasma forbidden zone ring input by a user, executing the subsequent step of adjusting the diameter of the plasma forbidden zone ring.
10. The method of claim 8, further comprising, after adjusting the diameter of the plasma exclusion zone ring according to the diameter value:
detecting a current diameter of the plasma exclusion zone ring with a sensor;
and if the current diameter is the same as the diameter value of the plasma forbidden zone ring input by a user, performing the subsequent step of introducing reaction gas into the reaction chamber.
11. The method according to any one of claims 8 to 10, wherein the material of the protective film layer is an insulating material.
12. A computer-readable storage medium comprising instructions that, when executed on a computer, cause the computer to perform the method of any one of claims 8-11.
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