CN114054447B - Single crystal furnace isolation cavity cleaning device and cleaning method - Google Patents
Single crystal furnace isolation cavity cleaning device and cleaning method Download PDFInfo
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- CN114054447B CN114054447B CN202010758571.7A CN202010758571A CN114054447B CN 114054447 B CN114054447 B CN 114054447B CN 202010758571 A CN202010758571 A CN 202010758571A CN 114054447 B CN114054447 B CN 114054447B
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- isolation cavity
- air
- air inlet
- silicon powder
- isolation
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- 238000002955 isolation Methods 0.000 title claims abstract description 119
- 238000004140 cleaning Methods 0.000 title claims abstract description 49
- 239000013078 crystal Substances 0.000 title claims abstract description 33
- 238000000034 method Methods 0.000 title claims abstract description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 75
- 239000011863 silicon-based powder Substances 0.000 claims abstract description 72
- 238000010521 absorption reaction Methods 0.000 claims abstract description 25
- 238000001914 filtration Methods 0.000 claims abstract description 18
- 238000007664 blowing Methods 0.000 claims abstract description 8
- 239000007921 spray Substances 0.000 claims description 31
- 238000009423 ventilation Methods 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 239000000428 dust Substances 0.000 description 5
- 235000013312 flour Nutrition 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 210000003437 trachea Anatomy 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B9/00—Cleaning hollow articles by methods or apparatus specially adapted thereto
- B08B9/08—Cleaning containers, e.g. tanks
- B08B9/093—Cleaning containers, e.g. tanks by the force of jets or sprays
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D46/00—Filters or filtering processes specially modified for separating dispersed particles from gases or vapours
- B01D46/10—Particle separators, e.g. dust precipitators, using filter plates, sheets or pads having plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B13/00—Accessories or details of general applicability for machines or apparatus for cleaning
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B15/00—Preventing escape of dirt or fumes from the area where they are produced; Collecting or removing dirt or fumes from that area
- B08B15/04—Preventing escape of dirt or fumes from the area where they are produced; Collecting or removing dirt or fumes from that area from a small area, e.g. a tool
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention provides a cleaning device and a cleaning method for an isolation cavity of a single crystal furnace, which are used for cleaning silicon powder in a sealed isolation cavity and are characterized by comprising the following steps: an air inlet unit capable of blowing air to the isolation cavity in a reciprocating rotation mode so that the silicon powder attached to the inner wall of the isolation cavity is blown off and floats in the isolation cavity; and an absorption unit that absorbs the silicon powder blown off by the air intake unit and causes the silicon powder to be collected by filtration; wherein the position of the air inlet unit is higher than the position of the absorption unit; the area of the air inlet cross section of the air inlet unit is smaller than the area of the air outlet cross section of the absorption unit. The cleaning device and the cleaning method provided by the invention have the advantages of simple structure, small occupied space and convenient operation, can completely cover the inner cavity of the isolation cavity, can rapidly clean the silicon powder in the isolation cavity, and have good cleaning effect and short cleaning time.
Description
Technical Field
The invention belongs to the technical field of single crystal furnace cleaning, and particularly relates to a single crystal furnace isolation cavity cleaning device and a single crystal furnace isolation cavity cleaning method.
Background
The isolation cavity is positioned at the lower end part of the auxiliary chamber of the single crystal furnace and is used for connecting the main furnace and the auxiliary furnace, in the crystal pulling process, because the re-cast silicon material contains a lot of silicon powder and dust, the isolation cavity is closer to the quartz crucible, the air temperature in the main furnace is higher, the air temperature in the auxiliary furnace is lower, and the hot air flows from the place with high air temperature to the place with low air temperature to diffuse, so that the silicon powder enters the isolation cavity along with the air flow in the re-cast process, and the silicon powder dust remains on the inner wall of the isolation cavity, especially on the step surface of the lower section of the isolation cavity, and the accumulated silicon powder dust is more. Therefore, before each crystal pulling, dust in the isolation cavity needs to be cleaned in time, so that the silicon powder is prevented from falling into the quartz crucible, and the quality of single crystal pulling is ensured.
Therefore, how to design a cleaning device and a cleaning method for an isolation cavity of a single crystal furnace solves the technical problem of residual silicon powder on the inner wall of the isolation cavity, and is one of the keys for ensuring the single crystal drawing quality, improving the purity of molten silicon and reducing the production cost.
Disclosure of Invention
The invention provides a cleaning device and a cleaning method for a single crystal furnace isolation cavity, which are suitable for single crystal furnace isolation cavities drawn by single crystal silicon rods with various sizes, and solve the technical problem that the inner wall of the isolation cavity contains silicon powder in the prior art.
In order to solve the technical problems, the invention adopts the following technical scheme:
a single crystal furnace isolation cavity cleaning device for cleaning silicon powder in a sealed isolation cavity, comprising:
an air inlet unit capable of blowing air to the isolation cavity in a reciprocating rotation mode so that the silicon powder attached to the inner wall of the isolation cavity is blown off and floats in the isolation cavity;
And an absorption unit that absorbs the silicon powder blown off by the air intake unit and causes the silicon powder to be collected by filtration;
wherein the position of the air inlet unit is higher than the position of the absorption unit;
The area of the air inlet cross section of the air inlet unit is smaller than the area of the air outlet cross section of the absorption unit.
Further, the air inlet unit comprises a swinging spray head assembly, an air inlet pipe and an air pump, wherein,
The spray head component is arranged on the inner side of the isolation cavity and connected with the air inlet pipe;
The air pump supplies air to the spray head assembly through the air inlet pipe so as to enter the isolation cavity;
one end of the spray head component, which is far away from the air inlet pipe, is provided with a plurality of spray nozzles;
The automatic reversing control ring is arranged at one end, close to the air inlet pipe, of the spray head assembly, and drives the spray nozzle to axially and reciprocally rotate along the spray head assembly.
Furthermore, the nozzles extend outwards in an inclined manner along the axial direction of the air inlet pipe and are uniformly arranged at one side far away from the air inlet pipe, a plurality of spray holes are formed in the periphery of the nozzles, and the inclination angle of the nozzles is 30-60 degrees.
Further, the nozzle is inclined at 45 °.
Further, the spray head assembly further comprises an inverted cone-shaped body and an inverted cone-shaped supporting table arranged on the inner side of the body;
One end of the body is connected with the control ring, and the other end of the body is communicated with the nozzle;
The body and the small end face of the supporting table are arranged on the same side and close to one side of the control ring;
an air flow channel for ventilation is arranged between the body and the supporting table.
Further, a spherical plug is arranged between the body and the small-diameter end of the supporting table; the center of the supporting table is provided with a spring, and the spring is propped against the spherical plug and is contacted with the small-diameter end of the body.
Further, the absorption unit comprises an air suction pipe, a vacuum pump and a filtering component arranged between the air suction pipe and the vacuum pump, wherein the air suction pipe is arranged on one side of a stepped surface of the joint of the isolation cavity and the main furnace of the single crystal furnace, and the diameter of the air suction pipe is larger than that of the air inlet pipe.
Further, the filtering assembly comprises a bracket and a filtering tank arranged on the upper end surface of the bracket, and two ends of the filtering tank are respectively communicated with the air suction pipe and the vacuum pump; the inner side of the filter tank is provided with a filter screen for isolating the silicon powder, and the filter screen is matched with the inner wall of the filter tank.
The method for cleaning the isolation cavity of the single crystal furnace, which adopts the cleaning device as set forth in any one of the above steps, comprises the following steps:
A certain speed of air flow enters the isolation cavity from one end of the isolation cavity so as to blow off the silicon powder in the isolation cavity;
The blown silicon powder is discharged from the other end of the isolation cavity along with the airflow and is collected uniformly.
Further, the inlet position of the air flow in the isolation cavity is higher than the discharge position of the air flow in the isolation cavity; and the inlet cross-sectional flow rate of the air flow in the isolation chamber is smaller than the outlet cross-sectional flow rate of the air flow in the isolation chamber.
Compared with the prior art, by adopting the technical scheme, the cleaning device has the advantages of simple structure, small occupied space and convenient operation, and the upper air inlet and the lower air outlet are arranged to be easier to absorb and discharge; meanwhile, the spray head component arranged in the isolation cavity is of an automatic reciprocating and reversing rotary structure, so that the inner cavity of the isolation cavity is completely covered, and particularly, for gathering more silicon powder at the lower section, the air flow pressure of the spray head component is high and the spray head component is precisely covered, the silicon powder in the isolation cavity can be quickly cleaned, the cleaning effect is good, the cleaning time is short, and the cleaned silicon powder is sucked away by the strong suction force in the lower exhaust port; the discharged silicon powder enters the filtering unit to be filtered and collected, so that the discharged air is pure.
Drawings
FIG. 1 is a schematic view of a cleaning apparatus according to an embodiment of the present invention;
Fig. 2 is a schematic view of a showerhead assembly according to an embodiment of the present invention.
In the figure:
100. Isolation chamber 110, upper isolation valve 120, lower isolation valve
200. Air inlet unit 210, nozzle assembly 211, and body
212. Control ring 213, nozzle 214, support table
215. Air flow channel 216, spherical plug 217, spring
220. Intake pipe 300, suction unit 310, and intake pipe
320. Vacuum pump 330, filter assembly 331, and stand
332. Filter tank 333 and filter screen
Detailed Description
The invention will now be described in detail with reference to the drawings and specific examples.
The isolation chamber 100 is a hollow cavity, and is isolated from the lower single crystal furnace main furnace and the upper single crystal furnace auxiliary furnace by an upper isolation valve 110 and a lower isolation valve 120, which are arranged as shown in fig. 1, so as to form an internal closed cavity. Because the silicon powder feeding device is closer to the lower main furnace, when the silicon material is fed again, the silicon powder carried by the re-feeding cylinder is easily driven by hot air flow to move into the isolation cavity 100, and is retained and adhered on the inner wall of the isolation cavity 100, particularly on the step surface of the lower section of the isolation cavity 100, and more silicon powder and dust are accumulated. This embodiment is to clean the silicon powder adhered to the inner wall of the isolation chamber 100, and specifically includes the following steps:
The embodiment provides a single crystal furnace isolation cavity cleaning device, as shown in fig. 1, for cleaning silicon powder in a sealed isolation cavity 100, including: an air inlet unit 200 that blows air to the isolation chamber 100 in a reciprocating rotation manner so that silicon powder attached to the inner wall of the isolation chamber 100 is blown off and floats in the isolation chamber; and an absorbing unit 300 that absorbs the silicon powder blown off by the air intake unit 200 and allows the silicon powder to be collected by filtration. Wherein the position of the air intake unit 200 is higher than the position of the absorption unit 300, it is preferable that the air intake unit 200 is disposed near the upper end surface side of the isolation chamber 100, and the absorption unit 300 is disposed near the lower end surface side of the isolation chamber 100. The area of the inlet cross section of the inlet unit 200 is smaller than the area of the outlet cross section of the absorption unit 300, which is advantageous in that the air flow in the isolation chamber 100 is discharged together with the silicon powder.
Specifically, the air intake unit 200 includes a swing type showerhead assembly 210, an air intake pipe 220, and an air pump (not shown) connected to the air intake pipe 220, wherein the showerhead assembly 210 is disposed inside the isolation chamber 100 and connected to the air intake pipe 220, and the showerhead assembly 210 is disposed perpendicular to an inner wall of the isolation chamber 100; the air pump supplies air to the head assembly 210 through the air inlet pipe 220 to enter the isolation chamber 100, and a control valve for controlling the flow rate is provided on the air inlet pipe 220.
As shown in fig. 2, the spray head assembly 210 includes a body 211 with an inverted cone structure and a support table 214 with an inverted cone structure disposed inside the body 211, wherein one end of the body 211 far away from the air inlet pipe 220 is provided with a plurality of nozzles 213 communicated with the body 211, one end of the body near the air inlet pipe 220 is provided with a control ring 212 capable of automatically reversing, one end of the body 211 is movably connected with the control ring 212, and the other end is fixedly communicated with the nozzles 213; the control ring 212 may reciprocate the body 211 and the nozzle 213 together in an axial direction of the showerhead assembly 210. The connection control of the control ring 212 and the body 211 is a common knowledge in the art, and the drawings are omitted here.
Further, the main body 211 and the small end face of the support table 214 are both on the same side and are arranged close to the control ring 212; an air flow channel 215 for ventilation is arranged between the body 211 and the support table 214, the air flow channel 215 is arranged along the periphery of the outer wall of the support table 214, and the body 211 and the support table 214 are arranged in a small end diameter one-side gap. A spherical plug 216 is arranged between the small diameter end close to the body 211 and the supporting table 214, the supporting table 214 is coaxially arranged with the body 211, a spring 217 is arranged at the center of the supporting table 214, one end of the spring 217 is fixed in a central hole of the supporting table 214, and the other end is connected with the spherical plug 216 and is contacted with the small diameter end face of the body 211 against the spherical plug 216. That is, the air flow entering from the air inlet pipe 220 firstly contacts with the spherical plug 216, the air flow pressure at a distance pushes the spherical plug 216 and the spherical plug 216 pushes the spring 217 to move towards one end of the nozzle 213, so that the air flow channel 215 is opened, the air enters the body 211 through the air flow channel 215, flows through the nozzle 213 and is sprayed from the nozzle 213 to the inner wall of the isolation cavity 100, the strong air flow blows or suspends the silicon powder adhered to the inner wall of the isolation cavity 100, after 4-5 minutes of blowing, the absorption unit 300 is opened, and the air flow is discharged from the absorption unit 300 together with the silicon powder.
Further, in order to ensure that the air flow ejected from the nozzles 213 entirely covers the inner wall of the isolation chamber 100, the nozzles 213 are uniformly arranged along the outer edge of the large end diameter surface of the body 211, preferably, the number of the nozzles 213 is at least three, and the nozzles 213 are all arranged to extend obliquely outward toward the side away from the air inlet pipe 220 along the axial direction of the air inlet pipe 220, that is, the axial direction of the body 211; meanwhile, a plurality of evenly arranged spray holes are required to be arranged along the periphery of the nozzle 213 along the length direction, air flows are evenly dispersed to all directions of the isolation cavity 100 through the spray holes, and meanwhile, the cross section of the air inlet pipe 220 and the isolation cavity 100 is required to be larger than the cross section of the air inlet of the air suction pipe 310 and the air outlet of the isolation cavity 100 in the absorption unit 300, so that under the condition that the air flow entering the isolation cavity 100 can enable silicon powder to be removed, the flow of the discharged air flow is larger than the flow of the air inlet flow, and the silicon powder can be further ensured to be discharged along with the air flow.
Further, the inclination angle θ of the nozzle 213 with respect to the axis of the body 211 is 30 to 60 °, because if the inclination angle θ is greater than 60 °, the isolation chamber 100 near the lower section cannot be blown, that is, the blowing intensity to the inner wall of the isolation chamber 100 is limited, so that the blowing effect is reduced. If the inclination angle θ is smaller than 30 °, the blank span between the nozzles 213 is larger, the inner walls of the isolation chamber 100 on the opposite sides cannot radiate, and silicon powder in the middle of the isolation chamber 100 cannot be completely cleaned, so that many blind areas appear in cleaning. Therefore, preferably, when the inclination angle θ of the nozzle 213 is 45 °, the jet effect is good, and particularly, the jet effect can cover the step surface where the main furnace of the single crystal furnace contacts the isolation chamber 100, and the silicon powder adhered to the step surface is more and the blown silicon powder sinks to the lower end surface, so that the absorption unit 300 provided at the step surface is facilitated to absorb the cleaned silicon powder more easily. Meanwhile, the nozzle 213 can be driven to rotate by the control ring 212 which is automatically reversed, so that the spraying area of the nozzle 213 is wider, and the silicon powder cleaning effect is better.
The suction unit 300 includes a suction pipe 310, a vacuum pump 320, and a filter assembly 330 between the suction pipe 310 and the vacuum pump 320, the suction pipe 310 is disposed at one side of a stepped surface near a junction of the isolation chamber 100 and the main furnace of the single crystal furnace, and the suction pipe 310 has a diameter larger than that of the suction pipe 220.
As shown in fig. 1, the filter assembly 330 includes a bracket 331 and a filter tank 332 disposed on an upper end surface of the bracket 331, the bracket 331 is of a table structure, the upper end surface is provided with a through hole for placing the filter tank 332, and the filter tank 332 is of an oblong structure and is fixedly disposed through the upper end surface of the bracket 331. Both ends of the filter tank 332 are respectively communicated with the air suction pipe 310 and the vacuum pump 320; a filter screen 333 for isolating silicon powder is arranged on the inner side of the filter tank 332, the filter screen 333 is matched with the inner wall of the filter tank 332, preferably, the filter screen 333 is positioned at one end of the filter tank 332 close to the air suction pipe 310, and a control valve for controlling the flow is arranged on the air suction pipe 310.
The air flow is discharged through the air suction pipe 310 with the silicon powder by the power provided by the vacuum pump 320, the discharged air flow and the silicon powder firstly enter the upper bin in the filter tank 332, then the silicon powder larger than the mesh of the filter screen 333 is blocked and collected on the filter screen 333, and the filtered air flow passes through the filter screen 333 and is discharged into the air through the air exhaust pipe. The setting of the absorption unit 300 not only can discharge the air current with silica flour fast, can filter the silica flour of being handled moreover, on being collected the filter screen 333 in unison, the filter screen 333 is commonly used, and can be easily changed, the air current that is filtered off is discharged along with the trachea and is got into in the air, avoids polluting the environment, and is low in cost and easy operation, and occupation space is little.
The cleaning method for the isolation cavity of the single crystal furnace adopts the cleaning device, and comprises the following steps:
during cleaning, a certain speed of air flow enters the isolation cavity 100 from the upper end of the isolation cavity 100 through the air inlet unit 200, so that silicon powder in the isolation cavity 100 is blown off.
The air flow entering from the air inlet pipe 220 firstly contacts with the spherical plug 216, the air flow pressure at a distance pushes the spherical plug 216 and enables the spherical plug 216 to push the spring 217 to move towards one end of the nozzle 213, so that the air flow channel 215 is opened, the air enters the body 211 through the air flow channel 215, then flows through the nozzle 213 and is sprayed to the inner wall of the isolation cavity 100 from the nozzle 213, a plurality of spray holes are formed in the inclined nozzles 213, the air flow is uniformly dispersed to all directions of the isolation cavity 100 through the spray holes, and can be driven to rotate by the control ring 212 which is automatically reversed, so that the spray area of the nozzle 213 is wider, the effect of cleaning silicon powder is better, and especially, the silicon powder adhered at the step surface is more and the blown silicon powder sinks to the lower end surface, so that the absorption unit 300 arranged at the step surface is beneficial to absorb the cleaned silicon powder more easily. The strong air flow blows or suspends the silicon powder adhered to the inner wall of the isolation chamber 100, and opens the absorption unit 300 after blowing for 4-5 minutes. In the absorption unit 300, the air flow is discharged through the suction pipe 310 with the silicon powder by the power provided by the vacuum pump 320, the discharged air flow and the silicon powder enter the upper bin in the filtering tank 332, then the silicon powder larger than the mesh of the filtering screen 333 is blocked and collected on the filtering screen 333, the air flow after back filtering passes through the filtering screen 333 and is discharged into the air through the exhaust pipe, namely, the blown silicon powder is discharged from the lower end face of the isolation cavity 100 along with the air flow and is uniformly collected.
In order to ensure that the flow of the exhaust gas flow is greater than the flow of the inlet gas flow under the condition that the gas flow entering the isolation chamber 100 can enable the silicon powder to be cleaned during operation, the silicon powder can be further ensured to be completely discharged along with the gas flow. The inlet position of the air flow in the isolation chamber 100 is higher than the exhaust position thereof in the isolation chamber 100; and the air flow has a smaller inlet cross-sectional flow rate in the isolation chamber 100 than its outlet cross-sectional flow rate in the isolation chamber 100.
1. The cleaning device and the cleaning method provided by the invention have the advantages of simple structure, small occupied space and convenience in operation, and the arrangement of the upper air inlet structure and the lower air outlet structure is adopted, so that the air flow blowing and the isolation cavity inner wall are facilitated, and the blown suspended silicon powder is more easily sucked by the high-speed absorption unit when the speed of the blown suspended silicon powder in the lower end part is reduced and the suspended silicon powder is free.
2. Meanwhile, in the air inlet unit, the spray head component arranged in the isolation cavity is rotated by the automatically-reversed control ring to drive the nozzles at multiple angles, so that the inner cavity of the isolation cavity is completely covered, and especially, more silicon powder is gathered at the lower section part, the spray head component can accurately and quickly clean the silicon powder, and the cleaning effect is good and the cleaning time is short.
3. The absorption unit is arranged, so that the air flow with silicon powder can be rapidly discharged, the treated silicon powder can be filtered out, the treated silicon powder is uniformly collected on the filter screen which can be easily replaced, the filtered air flow is discharged into the air along with the air pipe, the environment is prevented from being polluted, the cost is low, the operation is easy, and the occupied space is small.
The foregoing detailed description of the embodiments of the invention has been presented only to illustrate the preferred embodiments of the invention and should not be taken as limiting the scope of the invention. All equivalent changes and modifications within the scope of the present invention are intended to be covered by the present invention.
Claims (10)
1. A single crystal growing furnace isolation chamber cleaning device for cleaning silicon powder in a sealed isolation chamber, which is characterized by comprising:
an air inlet unit capable of blowing air to the isolation cavity in a reciprocating rotation mode so that the silicon powder attached to the inner wall of the isolation cavity is blown off and floats in the isolation cavity;
And an absorption unit that absorbs the silicon powder blown off by the air intake unit and causes the silicon powder to be collected by filtration;
wherein the position of the air inlet unit is higher than the position of the absorption unit;
The area of the air inlet cross section of the air inlet unit is smaller than the area of the air outlet cross section of the absorption unit;
The air inlet unit comprises a swinging spray head assembly, an air inlet pipe and an air pump, wherein,
The spray head component is arranged on the inner side of the isolation cavity and connected with the air inlet pipe;
The air pump supplies air to the spray head assembly through the air inlet pipe so as to enter the isolation cavity;
one end of the spray head component, which is far away from the air inlet pipe, is provided with a plurality of spray nozzles;
The periphery of the nozzle is provided with a plurality of spray holes, and the inclination angle of the nozzle is 30-60 degrees;
The air inlet unit is arranged on one side close to the upper end face of the isolation cavity, and the absorption unit is arranged on one side close to the lower end face of the isolation cavity;
The spray head assembly is arranged perpendicular to the inner wall of the isolation cavity.
2. The device for cleaning the isolation cavity of the single crystal furnace according to claim 1, wherein an automatic reversing control ring is arranged at one end of the spray head assembly, which is close to the air inlet pipe, and the control ring drives the spray nozzle to axially reciprocate along the spray head assembly.
3. The single crystal furnace isolation cavity cleaning device according to claim 2, wherein the nozzles are uniformly arranged and extend outwards in an inclined manner along the axis direction of the air inlet pipe towards the side far away from the air inlet pipe.
4. A single crystal furnace isolation chamber cleaning apparatus according to claim 3, wherein the nozzle is inclined at 45 °.
5. The apparatus according to any one of claims 2 to 4, wherein the shower head assembly further comprises an inverted cone-shaped body and an inverted cone-shaped supporting table disposed inside the body;
One end of the body is connected with the control ring, and the other end of the body is communicated with the nozzle;
The body and the small end face of the supporting table are arranged on the same side and close to one side of the control ring;
an air flow channel for ventilation is arranged between the body and the supporting table.
6. The isolation cavity cleaning device of the single crystal furnace of claim 5, wherein a spherical plug is arranged between the body and the small diameter end of the supporting table; the center of the supporting table is provided with a spring, and the spring is propped against the spherical plug and is contacted with the small-diameter end of the body.
7. The isolation cavity cleaning device of a single crystal furnace according to any one of claims 2-4 and 6, wherein the absorption unit comprises an air suction pipe, a vacuum pump and a filtering component arranged between the air suction pipe and the vacuum pump, the air suction pipe is arranged on one side of a stepped surface close to a joint of the isolation cavity and the main furnace of the single crystal furnace, and the diameter of the air suction pipe is larger than that of the air inlet pipe.
8. The isolation cavity cleaning device of the single crystal furnace according to claim 7, wherein the filtering assembly comprises a bracket and a filtering tank arranged on the upper end surface of the bracket, and two ends of the filtering tank are respectively communicated with the air suction pipe and the vacuum pump; the inner side of the filter tank is provided with a filter screen for isolating the silicon powder, and the filter screen is matched with the inner wall of the filter tank.
9. A method for cleaning an isolation cavity of a single crystal furnace, characterized in that a cleaning device as claimed in any one of claims 1 to 8 is used, comprising the steps of:
A certain speed of air flow enters the isolation cavity from one end of the isolation cavity so as to blow off the silicon powder in the isolation cavity;
The blown silicon powder is discharged from the other end of the isolation cavity along with the airflow and is collected uniformly.
10. The method for cleaning the isolation cavity of the single crystal furnace according to claim 9, wherein the inlet position of the airflow in the isolation cavity is higher than the discharge position of the airflow in the isolation cavity; and the inlet cross-sectional flow rate of the air flow in the isolation chamber is smaller than the outlet cross-sectional flow rate of the air flow in the isolation chamber.
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| CN202010758571.7A CN114054447B (en) | 2020-07-31 | 2020-07-31 | Single crystal furnace isolation cavity cleaning device and cleaning method |
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| CN202010758571.7A CN114054447B (en) | 2020-07-31 | 2020-07-31 | Single crystal furnace isolation cavity cleaning device and cleaning method |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102551599A (en) * | 2010-12-23 | 2012-07-11 | 莱克电气股份有限公司 | Pneumatic ground brush of dust collector |
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