CN114054447A - Cleaning device and cleaning method for isolation cavity of single crystal furnace - Google Patents
Cleaning device and cleaning method for isolation cavity of single crystal furnace Download PDFInfo
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- CN114054447A CN114054447A CN202010758571.7A CN202010758571A CN114054447A CN 114054447 A CN114054447 A CN 114054447A CN 202010758571 A CN202010758571 A CN 202010758571A CN 114054447 A CN114054447 A CN 114054447A
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- silicon powder
- isolation cavity
- single crystal
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- 238000002955 isolation Methods 0.000 title claims abstract description 93
- 238000004140 cleaning Methods 0.000 title claims abstract description 50
- 239000013078 crystal Substances 0.000 title claims abstract description 35
- 238000000034 method Methods 0.000 title claims abstract description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 72
- 239000011863 silicon-based powder Substances 0.000 claims abstract description 69
- 238000010521 absorption reaction Methods 0.000 claims abstract description 27
- 239000007921 spray Substances 0.000 claims description 22
- 238000001914 filtration Methods 0.000 claims description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 235000013312 flour Nutrition 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 238000009423 ventilation Methods 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 7
- 238000005204 segregation Methods 0.000 description 9
- 238000007664 blowing Methods 0.000 description 6
- 239000000428 dust Substances 0.000 description 5
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 238000007599 discharging Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 210000003437 trachea Anatomy 0.000 description 1
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B9/00—Cleaning hollow articles by methods or apparatus specially adapted thereto
- B08B9/08—Cleaning containers, e.g. tanks
- B08B9/093—Cleaning containers, e.g. tanks by the force of jets or sprays
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D46/00—Filters or filtering processes specially modified for separating dispersed particles from gases or vapours
- B01D46/10—Particle separators, e.g. dust precipitators, using filter plates, sheets or pads having plane surfaces
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B13/00—Accessories or details of general applicability for machines or apparatus for cleaning
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B15/00—Preventing escape of dirt or fumes from the area where they are produced; Collecting or removing dirt or fumes from that area
- B08B15/04—Preventing escape of dirt or fumes from the area where they are produced; Collecting or removing dirt or fumes from that area from a small area, e.g. a tool
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention provides a cleaning device and a cleaning method for an isolation cavity of a single crystal furnace, which are used for cleaning silicon powder in the sealed isolation cavity and are characterized by comprising the following steps: the air inlet unit can blow air to the isolation cavity in a reciprocating and rotating mode, so that the silicon powder attached to the inner wall of the isolation cavity is blown off and floats in the isolation cavity; and an absorption unit which absorbs the silicon powder blown off by the air inlet unit and filters and collects the silicon powder; wherein the position of the air intake unit is higher than the position of the absorption unit; the area of the cross section of the air inlet unit is smaller than that of the cross section of the air outlet of the absorption unit. The cleaning device and the cleaning method provided by the invention have the advantages of simple structure, small occupied space and convenience in operation, can completely cover the inner cavity of the isolation cavity, can quickly clean silicon powder in the isolation cavity, and are good in cleaning effect and short in cleaning time.
Description
Technical Field
The invention belongs to the technical field of single crystal furnace cleaning, and particularly relates to a single crystal furnace isolation cavity cleaning device and a single crystal furnace isolation cavity cleaning method.
Background
The isolation cavity is positioned at the lower end part of the auxiliary chamber of the single crystal furnace and used for connecting the main furnace and the auxiliary furnace, in the crystal pulling process, as the re-feeding silicon material contains a plurality of silicon powder and dust, as the isolation cavity is closer to the quartz crucible, the temperature in the main furnace is higher, the temperature in the auxiliary furnace is lower, the hot air flow can diffuse from the place with high temperature to the place with low temperature, the silicon powder can enter the isolation cavity along with the air flow in the re-feeding process, the silicon powder dust is remained on the inner wall of the isolation cavity, and particularly on the stepped surface of the lower section of the isolation cavity, more silicon powder dust is gathered. Therefore, before crystal pulling, dust in the isolation cavity needs to be cleaned in time, and silicon powder is prevented from falling into the quartz crucible, so that the quality of pulling the single crystal is guaranteed.
Therefore, how to design a cleaning device and a cleaning method for an isolation cavity of a single crystal furnace, solving the technical problem of residual silicon powder on the inner wall of the isolation cavity is one of the keys of ensuring the pulling quality of a single crystal, improving the purity of molten silicon and reducing the production cost.
Disclosure of Invention
The invention provides a cleaning device and a cleaning method for an isolation cavity of a single crystal furnace, which are suitable for the isolation cavity of the single crystal furnace for pulling silicon rods with various sizes and solve the technical problem that the inner wall of the isolation cavity contains silicon powder in the prior art.
In order to solve the technical problems, the invention adopts the technical scheme that:
a single crystal growing furnace separates chamber cleaning device for the silica flour in the sealed chamber of keeping apart of clearance, includes:
the air inlet unit can blow air to the isolation cavity in a reciprocating and rotating mode, so that the silicon powder attached to the inner wall of the isolation cavity is blown off and floats in the isolation cavity;
and an absorption unit which absorbs the silicon powder blown off by the air inlet unit and filters and collects the silicon powder;
wherein the position of the air intake unit is higher than the position of the absorption unit;
the area of the cross section of the air inlet unit is smaller than that of the cross section of the air outlet of the absorption unit.
Further, the air inlet unit comprises a swinging type spray head assembly, an air inlet pipe and an air pump, wherein,
the spray head assembly is arranged on the inner side of the isolation cavity and is connected with the air inlet pipe;
the air pump supplies air to the spray head assembly through the air inlet pipe so as to enter the isolation cavity;
one end of the spray head assembly, which is far away from the air inlet pipe, is provided with a plurality of nozzles;
the automatic reverse rotation control ring is arranged at one end, close to the air inlet pipe, of the spray head assembly, and the control ring drives the spray nozzle to axially rotate in a reciprocating mode along the spray head assembly.
Furthermore, the nozzles are inclined and extend outwards and are uniformly arranged towards one side far away from the air inlet pipe along the axial direction of the air inlet pipe, a plurality of spray holes are formed in the periphery of the nozzles, and the inclination angle of the nozzles is 30-60 ℃.
Further, the nozzle inclination angle is 45 ℃.
Furthermore, the spray head assembly also comprises an inverted cone-shaped body and an inverted cone-shaped support platform arranged on the inner side of the body;
one end of the body is connected with the control ring, and the other end of the body is communicated with the nozzle;
the body and the small end face of the support platform are arranged on the same side and close to one side of the control ring;
an airflow channel for ventilation is arranged between the body and the support platform.
Further, a spherical plug is arranged between the body and the small-diameter end of the support platform; and a spring is arranged in the center of the supporting platform and props against the spherical plug to be in contact with the small-diameter end of the body.
Furthermore, the absorption unit comprises an air suction pipe, a vacuum pump and a filtering assembly positioned between the air suction pipe and the vacuum pump, the air suction pipe is arranged close to one side of a stepped surface at the joint of the isolation cavity and the main furnace of the single crystal furnace, and the diameter of the air suction pipe is larger than that of the air inlet pipe.
Furthermore, the filtering component comprises a bracket and a filtering tank arranged on the upper end surface of the bracket, and two ends of the filtering tank are respectively communicated with the air suction pipe and the vacuum pump; and a filter screen for isolating the silicon powder is arranged on the inner side of the filter tank, and the filter screen is matched with the inner wall of the filter tank.
A method for cleaning an isolation cavity of a single crystal furnace adopts the cleaning device, and comprises the following steps:
a gas flow with a certain speed enters the isolation cavity from one end of the isolation cavity, so that the silicon powder in the isolation cavity is blown off;
and the blown silicon powder is discharged from the other end of the isolation cavity along with the airflow and is uniformly collected.
Further, the position of the air inlet in the isolation cavity is higher than the position of the air outlet in the isolation cavity; and the cross-sectional flow rate of the air flow at the inlet in the isolation cavity is smaller than that at the air outlet in the isolation cavity.
Compared with the prior art, the cleaning device has the advantages that by adopting the technical scheme, the cleaning device is simple in structure, small in occupied space and convenient to operate, and the upper air inlet and the lower air outlet are easy to absorb and discharge; meanwhile, the nozzle assembly placed in the isolation cavity is of a rotary structure capable of automatically reversing in a reciprocating mode, the inner cavity of the isolation cavity is completely covered, especially for silicon powder gathered at the lower section part, the airflow pressure of the nozzle assembly is large and the nozzle assembly is accurately covered, the silicon powder in the isolation cavity can be quickly cleaned, the cleaning effect is good, the cleaning time is short, and the cleaned silicon powder is sucked away by strong suction force in the lower exhaust port; the discharged silicon powder enters a filtering unit to be filtered and collected, so that the discharged air is pure.
Drawings
FIG. 1 is a schematic structural diagram of a cleaning apparatus according to an embodiment of the present invention;
FIG. 2 is a schematic structural diagram of a showerhead assembly according to an embodiment of the invention.
In the figure:
100. isolation chamber 110, upper isolation valve 120, lower isolation valve
200. Gas inlet unit 210, head assembly 211, and body
212. Control ring 213, nozzle 214, support table
215. Airflow channel 216, spherical plug 217 and spring
220. Intake pipe 300, absorption unit 310, and intake pipe
320. Vacuum pump 330, filter assembly 331 and bracket
332. Filter tank 333, filter screen
Detailed Description
The invention is described in detail below with reference to the figures and specific embodiments.
The isolation chamber 100 is a hollow chamber body, and is structured as shown in fig. 1, and is isolated from the lower single crystal furnace main furnace and the upper single crystal furnace auxiliary furnace by an upper isolation valve 110 and a lower isolation valve 120, so as to form an internally closed chamber body. Because the silicon powder feeding device is close to the main furnace at the lower part, when silicon materials are fed again, the silicon powder carried by the feeding cylinder is easy to be driven by hot air flow to move into the isolation cavity 100, and is retained and adhered to the inner wall of the isolation cavity 100, particularly on the step surface at the lower section part of the isolation cavity 100, and more silicon powder dust is gathered. In this embodiment, the specific steps for cleaning the silicon powder adhered to the inner wall of the isolation chamber 100 are as follows:
the embodiment provides a cleaning device for an isolated cavity of a single crystal furnace, as shown in fig. 1, for cleaning silicon powder in a sealed isolated cavity 100, including: an air inlet unit 200 blowing air to the segregation chamber 100 in a reciprocating and rotating manner so that the silicon powder attached to the inner wall of the segregation chamber 100 is blown off and floats in the segregation chamber; and an absorption unit 300 absorbing the silicon powder blown off by the gas inlet unit 200 and allowing the silicon powder to be filtered and collected. Wherein, the position of the air inlet unit 200 is higher than that of the absorption unit 300, and preferably, the air inlet unit 200 is disposed near the upper end surface side of the isolation chamber 100, and the absorption unit 300 is disposed near the lower end surface side of the isolation chamber 100. The area of the cross section of the air inlet unit 200 is smaller than that of the cross section of the air outlet of the absorption unit 300, which is beneficial to discharging the airflow and the silicon powder together in the isolation cavity 100.
Specifically, the air inlet unit 200 includes a swing type showerhead assembly 210, an air inlet pipe 220, and an air pump (not shown) connected to the air inlet pipe 220, wherein the showerhead assembly 210 is disposed inside the isolation chamber 100 and connected to the air inlet pipe 220, and the showerhead assembly 210 is disposed perpendicular to an inner wall of the isolation chamber 100; the air pump supplies air to the spray head assembly 210 through the air inlet pipe 220 to enter the isolation chamber 100, and the air inlet pipe 220 is provided with a control valve for controlling the flow rate.
As shown in fig. 2, the nozzle assembly 210 includes a body 211 having an inverted conical structure and a support 214 having an inverted conical structure and disposed inside the body 211, wherein a plurality of nozzles 213 are disposed at one end of the body 211 away from the air inlet pipe 220 and are communicated with the body 211, an automatically reversing control ring 212 is disposed at one end of the body 211 close to the air inlet pipe 220, one end of the body 211 is movably connected to the control ring 212, and the other end is fixedly communicated with the nozzles 213; the control ring 212 may drive the body 211 and the nozzle 213 to rotate reciprocally along the axial direction of the showerhead assembly 210. Here, the connection control of the control ring 212 to the body 211 is conventional knowledge in the art, and the drawings are omitted.
Further, the small end faces of the main body 211 and the support platform 214 are arranged on the same side and close to the control ring 212; an air flow channel 215 for ventilation is arranged between the body 211 and the support platform 214, the air flow channel 215 is arranged along the periphery of the outer wall of the support platform 214, and the body 211 and the support platform 214 are arranged in a clearance way on the small end diameter side. A spherical plug 216 is arranged between the body 211 and the small-diameter end of the support platform 214, the support platform 214 is arranged coaxially with the body 211, a spring 217 is arranged at the center of the support platform 214, one end of the spring 217 is fixed in the central hole of the support platform 214, and the other end of the spring 217 is connected with the spherical plug 216 and is arranged in a manner of propping against the spherical plug 216 to be in contact with the small-diameter end face of the body 211. That is, the airflow entering from the air inlet pipe 220 contacts the spherical plug 216, the pressure of the airflow pushes the spherical plug 216 and causes the spherical plug 216 to push the spring 217 to move towards one end of the nozzle 213, so that the airflow channel 215 is opened, the air enters the body 211 through the airflow channel 215, then flows through the nozzle 213 and is sprayed to the inner wall of the isolation chamber 100 from the nozzle 213, the strong airflow blows off or suspends the silicon powder adhered to the inner wall of the isolation chamber 100, after the blowing for 4-5 minutes, the absorption unit 300 is opened again, and the airflow carries the silicon powder to be discharged from the absorption unit 300.
Further, in order to ensure that the air flow sprayed from the nozzles 213 can completely cover the inner wall of the isolation chamber 100, the nozzles 213 are uniformly arranged along the outer edge of the large-end-diameter surface of the body 211, preferably, the number of the nozzles 213 is at least three, and the nozzles 213 are all obliquely and outwardly extended along the axial direction of the air inlet pipe 220, i.e., the axial direction of the body 211 towards the side far away from the air inlet pipe 220; meanwhile, a plurality of uniformly arranged spray holes are required to be arranged along the periphery of the nozzle 213 in the length direction, air flow is uniformly dispersed to all directions of the isolation cavity 100 through the spray holes, and the cross section of the air inlet pipe 220 and the isolation cavity 100 is required to be larger than the cross section area of the air outlet of the air suction pipe 310 and the isolation cavity 100 in the absorption unit 300, so that the flow rate of the discharged air flow is larger than that of the air inlet flow under the condition that the air flow entering the isolation cavity 100 can enable silicon powder to be removed, and the silicon powder can be further ensured to be completely discharged along with the air flow.
Further, the inclination angle θ of the nozzle 213 relative to the axis of the body 211 is 30-60 ℃, because if the inclination angle θ is greater than 60 °, the isolation chamber 100 near the lower section cannot be blown, that is, the blowing strength capable of blowing the isolation chamber 100 to the inner wall of the isolation chamber is limited, so that the blowing effect is reduced. If the inclination angle theta is smaller than 30 degrees, the blank span between the nozzles 213 is large, the inner walls of the isolation cavity 100 on the opposite surfaces cannot radiate, and silicon powder in the middle of the isolation cavity 100 cannot be completely cleaned, so that a plurality of blind areas appear in cleaning. Therefore, preferably, when the inclination angle θ of the nozzle 213 is 45 ℃, the jet flow effect is good, and particularly, the nozzle can be covered on the step surface where the main furnace of the single crystal furnace contacts the isolation chamber 100, so that a large amount of silicon powder adheres to the step surface and the blown silicon powder sinks to the lower end surface, which is beneficial for the absorption unit 300 arranged on the step surface to absorb the removed silicon powder more easily. Meanwhile, the nozzle 213 can be driven to rotate by the control ring 212 which automatically rotates reversely, so that the injection area of the nozzle 213 is wider, and the effect of cleaning silicon powder is better.
The absorption unit 300 comprises an air suction pipe 310, a vacuum pump 320 and a filter assembly 330 between the air suction pipe 310 and the vacuum pump 320, wherein the air suction pipe 310 is arranged at one side of a stepped surface near the connection part of the isolation chamber 100 and the main furnace of the single crystal furnace, and the diameter of the air suction pipe 310 is larger than that of the air inlet pipe 220.
As shown in fig. 1, the filter assembly 330 includes a bracket 331 and a filter canister 332 disposed on an upper end surface of the bracket 331, the bracket 331 has a table structure, the upper end surface is provided with a through hole for placing the filter canister 332, and the filter canister 332 has an oblong structure and is fixedly disposed through the upper end surface of the bracket 331. Both ends of the filter tank 332 are respectively communicated with the air suction pipe 310 and the vacuum pump 320; a filter screen 333 for isolating the silicon powder is arranged inside the filter tank 332, the filter screen 333 is adapted to the inner wall of the filter tank 332, preferably, the filter screen 333 is arranged at one end of the filter tank 332 close to the air suction pipe 310, and a control valve for controlling the flow rate is arranged on the air suction pipe 310.
The airflow is exhausted through the air suction pipe 310 with the silicon powder by the power provided by the vacuum pump 320, the exhausted airflow and the silicon powder firstly enter the upper bin in the filter tank 332, then the silicon powder larger than the meshes of the filter screen 333 is blocked and collected on the filter screen 333, and the airflow after back filtration passes through the filter screen 333 and is exhausted into the air through the exhaust pipe. The absorption unit 300 is arranged to rapidly discharge the airflow with the silicon powder, filter the processed silicon powder, collect the filtered silicon powder on the filter screen 333 uniformly, wherein the filter screen 333 is a common part and is easy to replace, and the filtered airflow enters the air along with the air pipe discharge, so that the environment pollution is avoided, the cost is low, the operation is easy, and the occupied space is small.
A method for cleaning an isolation cavity of a single crystal furnace adopts the cleaning device, and comprises the following steps:
during cleaning, a gas flow with a certain speed enters the segregation chamber 100 from the upper end part of the segregation chamber 100 through the gas inlet unit 200, so that the silicon powder in the segregation chamber 100 is blown off.
The air flow entering from the air inlet pipe 220 contacts with the spherical plug 216 first, the pressure of the air flow pushes the spherical plug 216 and causes the spherical plug 216 to push the spring 217 to move towards one end of the nozzle 213, thus, the airflow channel 215 is opened, air enters the body 211 through the airflow channel 215, then flows through the nozzles 213 and is sprayed from the nozzles 213 to the inner wall of the isolation chamber 100, a plurality of spray holes are arranged on the inclined groups of nozzles 213, the air flow is uniformly dispersed to all directions of the isolation chamber 100 through the spray holes and can be driven to rotate by the control ring 212 which automatically rotates reversely, thereby the spraying area of the nozzle 213 is wider, the effect of cleaning silicon powder is better, especially the nozzle can cover the step surface of the main furnace of the single crystal furnace, which is contacted with the isolation cavity 100, the silicon powder adhered to the stepped surface is more and the blown-up silicon powder sinks to the lower end surface, so that the absorption unit 300 arranged at the stepped surface is favorable for absorbing the removed silicon powder more easily. The strong airflow blows off or suspends the silicon powder adhered to the inner wall of the segregation chamber 100, and the absorption unit 300 is opened after blowing for 4-5 minutes. In the absorption unit 300, the air flow is exhausted through the air suction pipe 310 with the silicon powder by the power provided by the vacuum pump 320, the exhausted air flow and the silicon powder firstly enter the upper bin in the filter tank 332, then the silicon powder larger than the meshes of the filter screen 333 is blocked and collected on the filter screen 333, the air flow after back filtration passes through the filter screen 333 and is exhausted into the air through the exhaust pipe, namely, the blown silicon powder is exhausted from the lower end surface of the isolation cavity 100 along with the air flow and is collected uniformly.
In the operation process, in order to ensure that the flow of the exhaust gas is greater than that of the inlet gas under the condition that the silicon powder can be removed by the gas flow entering the isolation chamber 100, the silicon powder can be further ensured to be completely discharged along with the gas flow. The inlet position of the gas flow in the segregation chamber 100 is higher than the exhaust position of the gas flow in the segregation chamber 100; and the cross-sectional flow rate of the air flow at the air inlet in the isolation chamber 100 is smaller than that at the air outlet in the isolation chamber 100.
1. The cleaning device and the cleaning method provided by the invention have the advantages of simple structure, small occupied space and convenience in operation, and the arrangement of the upper air inlet structure and the lower air outlet structure is adopted, so that the air flow is favorably blown to shoot the inner wall of the isolation cavity, and the blown suspended silicon powder is favorably absorbed by the strong-speed absorption unit when the blown suspended silicon powder is decelerated and dissociated in the lower end part.
2. Simultaneously, in the air inlet unit, the nozzle assembly placed into the isolation cavity is rotated by the nozzle driven by the control ring capable of automatically reversing to drive multiple angles, the inner cavity of the isolation cavity is completely covered, more silicon powder is gathered at the lower section part, the nozzle assembly can accurately and quickly clean the silicon powder, the cleaning effect is good, and the cleaning time is short.
3. The setting of absorption unit not only can be fast with the air current discharge that has the silica flour, can filter the silica flour of being handled moreover, and on the unified filter screen that is collected can easily be changed, the air current that is filtered gets into the air along with the trachea discharge, avoids the polluted environment, and is not only with low costs and easily operation, and occupation space is little.
The embodiments of the present invention have been described in detail, and the description is only for the preferred embodiments of the present invention and should not be construed as limiting the scope of the present invention. All equivalent changes and modifications made within the scope of the present invention shall fall within the scope of the present invention.
Claims (10)
1. The utility model provides a single crystal growing furnace keeps apart chamber cleaning device for the silica flour in the sealed chamber of keeping apart of clearance, its characterized in that includes:
the air inlet unit can blow air to the isolation cavity in a reciprocating and rotating mode, so that the silicon powder attached to the inner wall of the isolation cavity is blown off and floats in the isolation cavity;
and an absorption unit which absorbs the silicon powder blown off by the air inlet unit and filters and collects the silicon powder;
wherein the position of the air intake unit is higher than the position of the absorption unit;
the area of the cross section of the air inlet unit is smaller than that of the cross section of the air outlet of the absorption unit.
2. The single crystal furnace isolation chamber cleaning device of claim 1, wherein the gas inlet unit comprises a swinging nozzle assembly, a gas inlet pipe and a gas pump, wherein,
the spray head assembly is arranged on the inner side of the isolation cavity and is connected with the air inlet pipe;
the air pump supplies air to the spray head assembly through the air inlet pipe so as to enter the isolation cavity;
one end of the spray head assembly, which is far away from the air inlet pipe, is provided with a plurality of nozzles;
the automatic reverse rotation control ring is arranged at one end, close to the air inlet pipe, of the spray head assembly, and the control ring drives the spray nozzle to axially rotate in a reciprocating mode along the spray head assembly.
3. The cleaning device for the isolated cavity of the single crystal furnace as claimed in claim 2, wherein the nozzles are uniformly arranged along the axial direction of the gas inlet pipe and extend obliquely outwards towards the side away from the gas inlet pipe, a plurality of spray holes are arranged on the periphery of the nozzles, and the inclination angle of the nozzles is 30-60 ℃.
4. The cleaning device for the isolated cavity of the single crystal furnace as claimed in claim 3, wherein the inclination angle of the nozzle is 45 ℃.
5. The cleaning device for the isolated cavity of the single crystal furnace as claimed in any one of claims 2 to 4, wherein the spray head assembly further comprises an inverted cone-shaped body and an inverted cone-shaped support platform arranged on the inner side of the body;
one end of the body is connected with the control ring, and the other end of the body is communicated with the nozzle;
the body and the small end face of the support platform are arranged on the same side and close to one side of the control ring;
an airflow channel for ventilation is arranged between the body and the support platform.
6. The cleaning device for the isolated cavity of the single crystal furnace as claimed in claim 5, wherein a spherical plug is arranged between the body and the small diameter end of the support platform; and a spring is arranged in the center of the supporting platform and props against the spherical plug to be in contact with the small-diameter end of the body.
7. The cleaning device for the isolated cavity of the single crystal furnace as claimed in any one of claims 2 to 4 and 6, wherein the absorption unit comprises an air suction pipe, a vacuum pump and a filtering assembly between the air suction pipe and the vacuum pump, the air suction pipe is arranged close to one side of the stepped surface where the isolated cavity is connected with the main furnace of the single crystal furnace, and the diameter of the air suction pipe is larger than that of the air suction pipe.
8. The cleaning device for the isolated cavity of the single crystal furnace as claimed in claim 7, wherein the filtering assembly comprises a bracket and a filtering tank arranged on the upper end surface of the bracket, and two ends of the filtering tank are respectively communicated with the air suction pipe and the vacuum pump; and a filter screen for isolating the silicon powder is arranged on the inner side of the filter tank, and the filter screen is matched with the inner wall of the filter tank.
9. A method for cleaning an isolated cavity of a single crystal furnace, which is characterized by adopting the cleaning device as claimed in any one of claims 1 to 8, and comprises the following steps:
a gas flow with a certain speed enters the isolation cavity from one end of the isolation cavity, so that the silicon powder in the isolation cavity is blown off;
and the blown silicon powder is discharged from the other end of the isolation cavity along with the airflow and is uniformly collected.
10. The method for cleaning the isolated cavity of the single crystal furnace as claimed in claim 9, wherein the inlet position of the gas flow in the isolated cavity is higher than the exhaust position of the gas flow in the isolated cavity; and the cross-sectional flow rate of the air flow at the inlet in the isolation cavity is smaller than that at the air outlet in the isolation cavity.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010758571.7A CN114054447B (en) | 2020-07-31 | 2020-07-31 | Single crystal furnace isolation cavity cleaning device and cleaning method |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202010758571.7A CN114054447B (en) | 2020-07-31 | 2020-07-31 | Single crystal furnace isolation cavity cleaning device and cleaning method |
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| CN114054447A true CN114054447A (en) | 2022-02-18 |
| CN114054447B CN114054447B (en) | 2024-08-02 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
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