CN114050198B - Radiation heat flow regulating device based on semiconductor material and application thereof - Google Patents
Radiation heat flow regulating device based on semiconductor material and application thereof Download PDFInfo
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Classifications
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- H01L31/08—
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- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The invention relates to a radiation heat flow regulating device based on semiconductor materials and application thereof, comprising a first radiator and a second radiator which are oppositely arranged, wherein the first radiator is provided with a semiconductor material layer, and the semiconductor material layer contains one or two of intrinsic semiconductor materials and doped semiconductor materials with carrier doping concentration less than 10 16cm‑3; the first radiator is arranged in a suspending way, or comprises a first substrate containing a metal material layer. The technical scheme of the invention mainly utilizes the change of the local electromagnetic state density caused by the change of the carrier concentration in the semiconductor material along with the temperature to realize the large-amplitude regulation of the radiant heat flow. The radiation heat flow regulating device provided by the invention can realize the functions of a thermal diode, a thermal triode, a thermal switch and the like by changing a trigger mechanism or combining with other components.
Description
Technical Field
The invention relates to the technical field of heat radiation, in particular to a radiation heat flow regulating device based on a semiconductor material and application thereof.
Background
Heat transfer is one of the most fundamental physical phenomena in nature, and is widely found in scientific research and production and life. Over 90% of global energy production is related to heat, so that effective regulation and control of the heat transfer process is important for developing novel thermal devices, developing advanced heat management technology, improving energy utilization efficiency and the like. The daily life of people is closely related to heat, and the clothes, food, living and running aspects are covered from clothes wearing, warming, water boiling and cooking, indoor temperature control and in-car air conditioning. And the continuous development of heat transfer regulation and control technology is expected to further improve the living standard of people.
The nonlinear electrical element can realize flexible regulation and control of current, is a foundation stone of a modern electronic information technology building, and thoroughly changes the life of people. However, the regulation of the heat flow is much more difficult, and the research of a nonlinear thermal device capable of flexibly regulating the heat flow is not mature, so that the research of a heat transfer mechanism and the effective regulation of a heat transfer process are of great significance to the scientific research and technical application in the thermal field.
Thermal radiation is one of three basic heat transport mechanisms, and is essentially electromagnetic waves caused by random thermal motion of charges inside an object, including propagation waves and evanescent waves. Electromagnetic waves can be classified into propagation modes, frustration modes, and surface modes according to propagation characteristics of these electromagnetic waves. Wherein the amplitude of the evanescent wave decays exponentially with distance from the object surface. When the distance between the radiators is close to or smaller than the thermal characteristic wavelength, evanescent waves start to gradually participate in and even dominate radiation heat exchange, and classical heat radiation law is broken, which is called near-field heat radiation.
The heat flow regulating device based on near-field heat radiation often has two ends, namely two radiators, and heat flow is transmitted between the two radiators in the form of electromagnetic waves. Because the thermal rectification based on near-field thermal radiation can utilize richer electromagnetic modes to realize the regulation and control of heat flow, the thermal rectification is expected to realize larger regulation and control capability, and is widely focused on various nonlinear thermal devices such as thermal diodes, thermal triodes, thermal switches and the like.
The physical mechanisms underlying different nonlinear thermal devices such as thermal diodes, thermal transistors and thermal switches are relatively similar and can be generalized in near field thermal radiation to: different electromagnetic waves in near-field thermal radiation are regulated and controlled through different triggering mechanisms such as heat, light and electricity, so that the purpose of changing the radiation heat flow is achieved. Taking a thermal diode as an example, a thermal diode based on thermal rectification effect is a very typical heat flow regulation mode, and under the same temperature difference, the magnitude of heat flow in a thermal rectification device is related to the bias direction of temperature. When the temperature direction changes, the change in dielectric constant will cause a difference in radiant heat flow to form thermal rectification. The core performance parameter of thermal rectification is the rectification ratio, which is defined as the ratio of the difference between the forward and reverse heat flows to the smaller reverse heat flow.
To sum up, in order to better realize the regulation in the heat transportation process, those skilled in the art want to develop a new technical scheme to effectively improve the heat flow regulation capability of the near-field radiation heat flow regulation device.
Disclosure of Invention
The invention aims to provide a radiation heat flow regulating device based on a semiconductor material and application thereof, wherein the device mainly utilizes the change of local electromagnetic state density caused by the change of carrier concentration in the semiconductor material along with the temperature to realize the large-amplitude regulation of radiation heat flow. The radiation heat flow regulating device can realize the functions of heat rectification, a heat triode, a heat switch and the like by changing a trigger mechanism or combining with other components.
To this end, in a first aspect, the present invention provides a radiant heat flow regulating device based on a semiconductor material, comprising a first radiator and a second radiator arranged opposite to each other;
the first radiator is provided with a semiconductor material layer, and the semiconductor material layer contains one or two of an intrinsic semiconductor material and a doped semiconductor material with a carrier doping concentration of less than 10 16cm-3;
The first radiator is arranged in one of the following modes:
(a) The first radiator is formed by the semiconductor material layer and is suspended;
(b) The first radiator also comprises a first substrate, the first substrate is made of a nonmetallic material, the semiconductor material layer covers the first substrate, and the first radiator is arranged in a suspending way;
(c) The first radiator further comprises a first substrate, the first substrate comprises a first metal material layer, and the semiconductor material layer covers the first substrate.
Further, the first and second radiators have a spacing of 1nm to 10mm, preferably 10nm to 100 μm, more preferably 10nm to 1 μm. For example, the first radiator and the second radiator have a spacing 1nm、10nm、20nm、50nm、80nm、100nm、200nm、300nm、400nm、500nm、600nm、700nm、800nm、900nm、1μm、2μm、3μm、4μm、5μm、6μm、7μm、8μm、9μm、10μm、100μm、500μm、1mm、2mm、5mm、10mm or the like.
Further, in the semiconductor material layer, the volume ratio of the semiconductor material is 30% -100% (V/V); preferably, the semiconductor material is present in the form of a regularly or irregularly distributed discrete component, or the semiconductor material layer contains a regularly or irregularly distributed non-semiconductor material component.
In some embodiments, the semiconductor material layer is comprised of one or both of an intrinsic semiconductor material and a doped semiconductor material having a carrier doping concentration of less than 10 16cm-3.
In some embodiments, the semiconductor material layer has a volume ratio of the semiconductor material of 30% or more and less than 100%; preferably, the semiconductor material is present in the form of a regularly or irregularly distributed discrete component, or the semiconductor material layer contains a regularly or irregularly distributed non-semiconductor material component.
Further, in the semiconductor material layer, the semiconductor is selected from one or a combination of two or more of the following groups: silicon (Si), germanium (Ge), gallium phosphide (GaP), gallium arsenide (GaAs), indium arsenide (InAs), boron (B), tellurium (Te), selenium (Se), gallium nitride (GaN), indium nitride (InN), aluminum nitride (AlN), aluminum oxide (Al 2O3), silicon carbide (SiC), zinc oxide (ZnO), silicon nitride (Si 3N4), gallium antimonide (GaSb), zinc sulfide (ZnS), cadmium telluride (CdTe), mercury telluride (HgTe), cuprous bromide (CuBr), cuprous iodide (CuI), bismuth telluride (Bi 2Te3), bismuth selenide (Bi 2Se3), bismuth sulfide (Bi 2S3), arsenic telluride (As 2Te3); silicon (Si), germanium (Ge), gallium phosphide (GaP), gallium arsenide (GaAs), indium arsenide (InAs), and the like are preferable.
Further, the thickness of the semiconductor material layer is 1nm to 100mm, preferably 1nm to 1mm, more preferably 1nm to 100 μm; such as 1nm、10nm、20nm、50nm、80nm、100nm、200nm、300nm、400nm、500nm、600nm、700nm、800nm、900nm、1μm、2μm、3μm、4μm、5μm、6μm、7μm、8μm、9μm、10μm、100μm、500μm、1mm、2mm、5mm、10mm、50mm、100mm, etc.
According to the radiant heat flow regulating device provided by the invention, when the temperature changes, the carrier concentration of the semiconductor material layer in the first radiator can be caused to change drastically, so that the intensity of a high-k mode in a low-frequency region is caused to change drastically, which is a key element of the radiant heat flow regulating device provided by the invention capable of realizing excellent heat rectification performance. While the intensity of the low-k modes in the high-frequency region hardly changes with temperature, since these electromagnetic modes are mainly affected by the real part epsilon 'of the dielectric constant of the semiconductor material layer, and epsilon' hardly changes with temperature, these low-k modes have a great negative effect on the performance of thermal rectification. Preferably, when the thickness of the semiconductor material layer is 1nm-1mm, the low-k modes are significantly weakened, while the high-k modes in the low-frequency region are hardly affected, so that the thermal rectification performance of the radiant heat flow regulating device can be significantly improved.
Further, the thickness of the first substrate is 1nm to 100mm, for example 1nm、10nm、20nm、50nm、80nm、100nm、200nm、300nm、400nm、500nm、600nm、700nm、800nm、900nm、1μm、2μm、3μm、4μm、5μm、6μm、7μm、8μm、9μm、10μm、100μm、500μm、1mm、2mm、5mm、10mm、50mm、100mm and the like.
In some embodiments, the first radiator includes a semiconductor material layer and a first substrate composed of a non-metallic material, the first substrate having a thickness of 1nm-1 μm, such as 1nm, 10nm, 20nm, 50nm, 80nm, 100nm, 200nm, 300nm, 400nm, 500nm, 600nm, 700nm, 800nm, 900nm, 1 μm, and the like.
Further, the nonmetallic material is preferably a polar material.
In some embodiments, the first radiator comprises a semiconductor material layer and a first substrate, the semiconductor material layer overlying the first substrate, the first substrate comprising a first metal material layer; in the first metal material layer, the volume ratio of the metal material is more than 20% (V/V); preferably, the thickness of the first metal material layer is 1nm-100mm, such as 1nm、10nm、20nm、50nm、80nm、100nm、200nm、300nm、400nm、500nm、600nm、700nm、800nm、900nm、1μm、2μm、3μm、4μm、5μm、6μm、7μm、8μm、9μm、10μm、100μm、500μm、1mm、2mm、5mm、10mm、50mm、100mm;
preferably, the distance between the point in the vertical line between the first radiator and the second radiator and the first metal material layer is 10nm-100mm; such as 10nm、20nm、50nm、80nm、100nm、200nm、300nm、400nm、500nm、600nm、700nm、800nm、900nm、1μm、2μm、3μm、4μm、5μm、6μm、7μm、8μm、9μm、10μm、100μm、500μm、1mm、2mm、5mm、10mm、50mm、100mm, etc.
In some embodiments, the first metal material layer is composed of a metal material.
In some embodiments, the first substrate is comprised of a first layer of metallic material.
In other embodiments, the first substrate includes a first layer of metallic material and a layer of non-metallic material; the nonmetallic material is preferably a polar material.
Further, the second radiator is provided with one or a combination of two of a polar material layer and a doped semiconductor material layer.
Further, in the polar material layer, the volume ratio of the polar material is 30% -100% (V/V); preferably, the polar material is present in the form of a regularly or irregularly distributed discrete component, or the polar material layer contains a regularly or irregularly distributed non-polar material component.
In some embodiments, the layer of polar material is comprised of a polar material.
In some embodiments, the polar material layer has a volume ratio of polar material of 30% or more and less than 100%; preferably, the polar material is present in the form of a regularly or irregularly distributed discrete component, or the polar material layer contains a regularly or irregularly distributed non-polar material component.
Further, the polar material is selected from sodium chloride (NaCl), potassium bromide (KBr), potassium chloride (KCl), barium fluoride (BaF 2), cesium fluoride (SrF 2), calcium fluoride (CaF 2), lithium fluoride (LiF), gallium nitride (GaN), magnesium oxide (MgO), cesium bromide (CsBr), cesium iodide (CsI), zinc sulfide (ZnS), silver bromide (AgBr), silver chloride (AgCl), cubic boron nitride (cBN), silicon carbide (SiC), silicon dioxide (SiO 2), hexagonal boron nitride (hBN), zinc selenide (ZnSe), sapphire, cadmium telluride (CdTe), silicon dioxide (SiO 2), and the like; preferably sodium chloride (NaCl), potassium bromide (KBr), potassium chloride (KCl), barium fluoride (BaF 2), cesium fluoride (SrF 2), calcium fluoride (CaF 2), lithium fluoride (LiF), gallium nitride (GaN), magnesium oxide (MgO), cesium bromide (CsBr), cesium iodide (CsI), zinc sulfide (ZnS), silver bromide (AgBr) or silver chloride (AgCl).
Further, the thickness of the polar material layer is 1nm-100mm, preferably 1nm-10mm; such as 1nm、10nm、20nm、50nm、80nm、100nm、200nm、300nm、400nm、500nm、600nm、700nm、800nm、900nm、1μm、2μm、3μm、4μm、5μm、6μm、7μm、8μm、9μm、10μm、100μm、500μm、1mm、2mm、5mm、10mm、50mm、100mm, etc.
Further, the doped semiconductor layer is made of a doped semiconductor material with a carrier doping concentration of more than 10 15cm-3; preferably, the doping concentration is 10 15-1020cm-3; more preferably, the doping concentration is 10 16-1020cm-3; further preferably, the doping concentration is 10 17-1019cm-3; wherein the semiconductor is selected from silicon (Si), germanium (Ge), gallium phosphide (GaP), gallium arsenide (GaAs), indium arsenide (InAs), boron (B), tellurium (Te), selenium (Se), gallium nitride (GaN), indium nitride (InN), aluminum nitride (AlN), aluminum oxide (Al 2O3), silicon carbide (SiC), zinc oxide (ZnO), silicon nitride (Si 3N4), gallium antimonide (GaSb), zinc sulfide (ZnS), cadmium telluride (CdTe), mercury telluride (HgTe), cuprous bromide (CuBr), cuprous iodide (CuI), bismuth telluride (Bi 2Te3), bismuth selenide (Bi 2Se3), bismuth sulfide (Bi 2S3), arsenic telluride (As 2Te3); preferably silicon (Si), germanium (Ge), gallium phosphide (GaP), gallium arsenide (GaAs) or indium arsenide (InAs).
The thickness of the doped semiconductor layer is 1nm-100mm, preferably 1nm-10mm; such as 1nm、10nm、20nm、50nm、80nm、100nm、200nm、300nm、400nm、500nm、600nm、700nm、800nm、900nm、1μm、2μm、3μm、4μm、5μm、6μm、7μm、8μm、9μm、10μm、100μm、500μm、1mm、2mm、5mm、10mm、50mm、100mm, etc.
Further, the second radiator further comprises a second substrate, the polar material layer or the doped semiconductor material layer covers the second substrate, and the second substrate contains a metal material layer; in the metal material layer, the volume ratio of the metal material is more than 20% (V/V);
Preferably, the thickness of the second metal material layer is 1nm-100mm, such as 1nm、10nm、20nm、50nm、80nm、100nm、200nm、300nm、400nm、500nm、600nm、700nm、800nm、900nm、1μm、2μm、3μm、4μm、5μm、6μm、7μm、8μm、9μm、10μm、100μm、500μm、1mm、2mm、5mm、10mm、50mm、100mm;
Preferably, the distance between the point in the vertical line between the first radiator and the second metal material layer is 10nm-100mm, such as 10nm、20nm、50nm、80nm、100nm、200nm、300nm、400nm、500nm、600nm、700nm、800nm、900nm、1μm、2μm、3μm、4μm、5μm、6μm、7μm、8μm、9μm、10μm、100μm、500μm、1mm、2mm、5mm、10mm、50mm、100mm or the like.
According to the radiant heat flow regulating device, when the radiant heat flow regulating device comprises a substrate containing a metal material layer, the distance between the vertical line middle point between the first radiator and the second radiator and the metal material layer is 10nm-100mm. The present invention has been studied to find that, for example, too close (e.g., less than 10 nm) of a metal material layer contributes more radiant heat flows, which are insensitive to changes in the temperature bias direction (because the dielectric constant of the metal is insensitive to temperature changes), and therefore impair the heat flow regulation performance; if the metal material layer is too far (for example, more than 100 mm), it means that there is a larger volume of radiator above the metal layer, resulting in more low-k modes, which also impair the heat flow regulation performance.
In some embodiments, the second metal material layer is composed of a metal material.
In some embodiments, the second substrate is comprised of a second layer of metallic material.
In other embodiments, the second substrate includes a second layer of metallic material and a layer of non-metallic material; the nonmetallic material is preferably a polar material.
Further, the metal material is selected from one or a combination of two or more of the following groups: silver (Ag), gold (Au) and aluminum (Al).
According to the radiation heat flow regulating device, the first substrate and the second substrate mainly serve to support and improve the mechanical strength of the device, the metal material layer is mainly used for shielding heat radiation on the back surface of the device, and when the thickness of the metal material layer is greater than or equal to 10nm, effective shielding can be achieved; when the thickness of the metal material layer is more than or equal to 100nm, high-efficiency shielding can be realized; when the thickness of the metal material layer is more than or equal to 1000nm, nearly complete shielding can be realized, and the radiation heat flow regulating device is placed on any object at the moment, so that the heat flow regulating performance of the device is not affected. Even when the thickness of the metal material layer is only 1nm, a certain shielding effect can be achieved. The thickness of the layer of metal material may be chosen to be between 10nm and 100mm, depending on the actual situation, a common thickness being for example 100nm to 10 μm.
In some embodiments, the second radiator includes a doped semiconductor material layer, a polar material layer, and a second substrate stacked in this order.
According to the radiant heat flow regulating device of the invention, if a coating layer with the thickness not exceeding 1 μm is added on the surface of one side of the second radiator close to the first radiator (for example, a coating layer with pores or nonmetallic material accounting for more than 20 percent is added); and/or if a coating layer with a thickness of not more than 1 μm is added to the surface of the side of the first radiator close to the second radiator (e.g. a coating layer with pores or a nonmetallic material accounting for > 20%) is still within the scope of the invention.
The radiation heat flow regulating device at least comprises a first radiator and a second radiator, and on the basis, more radiators can be arranged by stacking a plurality of first radiators and second radiators, which is also within the protection scope of the invention.
In some embodiments, in the radiant heat flow regulating device, one or more radiators are further disposed between the first radiator and the second radiator.
In some embodiments, in the radiant heat flow regulating device, one or more first and/or second radiators are further disposed between the first and second radiators.
In a second aspect of the invention, there is provided the use of a radiant heat flow regulating device according to the invention for regulating heat flow.
In a third aspect of the invention, a heat flow regulator comprising the radiant heat flow regulating device is provided.
Further, the heat flow regulator is a thermal diode, a thermal triode, or a thermal switch.
Compared with the prior art, the invention has the following advantages:
The invention provides a radiant heat flux modulating device comprising a first radiator and a second radiator, the first radiator comprising a layer of semiconductor material so that it is capable of providing as large a localized electromagnetic state density difference as possible; the second radiator contains a polar material layer and/or a doped semiconductor material layer, so that proper frequency bands can be selectively screened to guide radiation heat exchange, and the local electromagnetic state density difference provided by the first radiator as large as possible can be converted into the radiation heat flow difference, thereby realizing efficient regulation and control of the radiation heat flow.
Drawings
Various other advantages and benefits will become apparent to those of ordinary skill in the art upon reading the following detailed description of the preferred embodiments. The drawings are only for purposes of illustrating the preferred embodiments and are not to be construed as limiting the invention. In the drawings:
fig. 1: schematic diagram of thermal diode based on thermal radiation;
fig. 2: a change rule of a real part and an imaginary part of the dielectric constant of the intrinsic silicon at different temperatures;
fig. 3: local electromagnetic state densities of the intrinsic silicon with the semi-infinite plane structure at different temperatures;
Fig. 4: local electromagnetic state density change proportion of intrinsic silicon layered materials with different thicknesses; wherein the ratio of the change in the local electromagnetic state density=the local electromagnetic state density at 1000K/the local electromagnetic state density at 300K;
Fig. 5: the local electromagnetic state density change proportion of the intrinsic silicon emptying film and the local electromagnetic state density of the polar material layer with the infinite plane structure; wherein the ratio of the change in the local electromagnetic state density=the local electromagnetic state density at 1000K/the local electromagnetic state density at 300K;
Fig. 6: the local electromagnetic state density change proportion of the intrinsic silicon emptying film and the local electromagnetic state density of the doped silicon films with different thicknesses under 300K and 1000K respectively; wherein the ratio of the change in the local electromagnetic state density=the local electromagnetic state density at 1000K/the local electromagnetic state density at 300K;
Fig. 7: the first radiator of the radiant heat flow regulating device provided by the invention is structurally schematic;
fig. 8: the invention provides a structural schematic diagram of a second radiator of a radiant heat flow regulating device;
fig. 9: the second radiator of the radiant heat flow regulating device is provided with another structural schematic diagram;
fig. 10: the structure schematic diagram of the thermal diode provided by the invention;
fig. 11: the invention provides a structural schematic diagram of a thermal triode;
fig. 12: under the condition of different radiator spacing, the change condition of the rectification ratio of the thermal diode provided by the invention;
Fig. 13: a local electromagnetic state density map of a first radiator composed of intrinsic silicon under a temperature variation condition;
Fig. 14: a local electromagnetic state density variation ratio of a first radiator composed of intrinsic silicon and silver; wherein the ratio of the change in the local electromagnetic state density=the local electromagnetic state density at 1000K/the local electromagnetic state density at 300K;
Fig. 15: a graph of radiative heat exchange coefficients of the intrinsic silicon and potassium bromide combined thermal diode under forward and reverse temperature bias conditions, respectively;
fig. 16: the rectification ratio of the thermal diode combined by intrinsic silicon and potassium bromide changes with the thickness of the film;
Fig. 17: a graph of radiative heat exchange coefficients for the intrinsic silicon and doped silicon combined thermal diode under forward and reverse temperature bias conditions, respectively;
Fig. 18: the rectification ratio of the intrinsic silicon and doped silicon combined thermal diode changes with the thickness of the film;
fig. 19: schematic of the structure of a thermal diode comprising a combination of intrinsic silicon and potassium bromide of the substrate;
Fig. 20: the rectification ratio of the thermal diode containing the combination of the intrinsic silicon of the substrate and the potassium bromide changes along with the thickness of the film;
Fig. 21: a schematic structural diagram of a thermal diode comprising a combination of intrinsic silicon and doped silicon of a substrate;
fig. 22: the rectification ratio of the thermal diode combined by intrinsic silicon and doped silicon containing substrate varies with the thickness of the film;
Fig. 23: a schematic structural diagram of a thermal diode comprising a combination of intrinsic silicon, doped silicon and potassium bromide of a substrate;
Fig. 24: the rectification ratio of the thermal diode containing the combination of the intrinsic silicon of the substrate, the doped silicon and the potassium bromide changes along with the thickness of the film;
fig. 25: a schematic of the structure of a thermal diode comprising a combination of intrinsic silicon and cubic boron nitride of a nonmetallic substrate.
Detailed Description
Exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. While exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure may be embodied in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art.
Fig. 1 shows a schematic diagram of a thermal diode based on heat radiation, which is a very typical way of regulating the heat flow, and the magnitude of the heat flow in a thermal rectifying device is related to the bias direction of the temperature under the same temperature difference. When the temperature direction changes, the change in dielectric constant will cause a difference in radiant heat flow to form thermal rectification. The core performance parameter of thermal rectification is the rectification ratio, which is defined as the ratio of the difference between the forward and reverse heat flows to the smaller reverse heat flow.
Based on the wave electrodynamic theory framework, the radiant heat flow between two parallel planar radiators, a first radiator (at temperature T 1) and a second radiator (at temperature T 2), can be calculated by the following equation:
Where d is the spacing between the two radiators, ω is the angular frequency, and κ is the transverse wave vector. For far-field heat radiation under a macroscopic scale, only electromagnetic waves with transverse wave vectors smaller than omega/c 0 participate in radiation heat exchange (c 0 is the speed of light in vacuum); when the distance between the two radiators is smaller than the thermal wavelength (about 10 μm at room temperature), evanescent waves with transverse wave vectors k larger than ω/c 0 start to participate in or even dominate radiation heat exchange, and especially when some transverse wave vectors k are large, the participation of electromagnetic modes (called high-k electromagnetic modes) can enhance radiation heat exchange capacity by several orders of magnitude over far-field thermal radiation. Therefore, by reasonably utilizing the high-kappa modes, the efficient regulation and control of the radiant heat flow are expected to be realized.
The invention enables the near-field radiation heat flow regulating device to have the heat flow regulating capability as large as possible by enabling the first radiator to provide the difference of the local electromagnetic state density as large as possible. And because the difference of the local electromagnetic state densities in different frequency bands is different, the invention selectively screens the proper frequency band to lead radiation heat exchange by applying the second radiator, thereby converting the difference of the local electromagnetic state densities provided by the first radiator into the difference of radiation heat flow as large as possible, and realizing the efficient regulation and control of the radiation heat flow.
The local electromagnetic state density is defined as the number of electromagnetic modes in unit space and unit frequency in a certain area above the radiator. For a planar radiator, the local density of electromagnetic states at location z above it can be calculated using the following formula:
In formula (2), r s、rp is the interfacial fresnel reflection coefficient of s and p polarization states, and k 0 and γ 0 are the transverse wave vector and the longitudinal wave vector (perpendicular to the interface) in vacuum, respectively. The local electromagnetic state density is selected as the reference physical quantity, because the local electromagnetic state density can represent the near-field radiation capability of a radiator, and in general, the larger the local electromagnetic state density is, the larger the near-field radiation heat flow can be realized.
From the above, one key to realizing efficient thermal radiation regulation is to design a radiator to realize a larger change of the local electromagnetic state density under the control of the external environment (such as temperature, electric field, magnetic field, pressure, etc.). In order to obtain the largest possible change in the local electromagnetic state density, the invention adopts layered semiconductor materials, and causes a large difference in the local electromagnetic state density by utilizing the dielectric constant change caused by the change of the internal carriers. For semiconductor materials, the dielectric constant thereof can be generally written as the following expression:
Wherein ε ', ε' are the real and imaginary parts of the dielectric constant, respectively, ε bl represents contributions from inter-band transitions and lattice absorption of electrons within the material, N e, Τ e is the concentration, equivalent mass and relaxation time of electrons in the conduction band, N h,/>, respectivelyΤ h is the concentration of holes in the valence band, equivalent mass and relaxation time, respectively, ε 0 is the vacuum dielectric constant.
Taking the dielectric constant characteristics of semiconductor materials at different temperatures as an example, when the temperature increases, the concentration of free carriers increases due to thermal excitation, resulting in a significant increase in the imaginary part epsilon 'of the dielectric constant, while the real part epsilon' of the dielectric constant is almost unchanged. Taking intrinsic silicon as an example, the change rule of the real part and the imaginary part of the dielectric constant with temperature is shown in fig. 2; fig. 3 shows the local electromagnetic state density characteristics of the intrinsic silicon of semi-infinite large planar structure at different temperatures.
As can be seen from fig. 3, when the temperature of the intrinsic silicon with the semi-infinite planar structure increases from 300K to 1000K, the local electromagnetic state density in the low frequency region can be changed by more than 4 orders of magnitude at maximum. The reason for this is mainly due to the emissivity of the high kappa mode for the p-polarization stateIt is this increase in high κ modes that causes a sharp rise in the local density of electromagnetic states above the radiator as ε' increases. So far, it is known that temperature can cause an increase in the carrier concentration of the semiconductor, leading to a characteristic change in its dielectric constant and ultimately to a significant difference in the density of local electromagnetic states.
In order to further improve the difference of the local electromagnetic state densities of the semiconductor layered material at different temperatures, the invention researches the local electromagnetic state density characteristics of the semiconductor layered material with different thicknesses. According to the invention, the semiconductor material is thinned and suspended, so that the contribution of electromagnetic waves with smaller transverse wave vector kappa propagating in the material to heat radiation can be reduced, and a larger difference of local electromagnetic state densities can be obtained in a wider frequency range. Taking intrinsic silicon as an example, fig. 4 shows the characteristic of the change of the local electromagnetic state density of the intrinsic silicon layered material at different thicknesses.
In order to provide a first radiator with as large a local variation in the density of electromagnetic states as possible, in some embodiments of the invention, the semiconductor material in the first radiator is intrinsic silicon; in other embodiments of the present invention, the semiconductor material in the first radiator is a low-doped semiconductor (carrier doping concentration is less than 10 16cm-3), and when the low-doped semiconductor material is adopted, the change of external environment (such as temperature, electric field, magnetic field, pressure, etc.) is easier to generate larger carrier concentration change due to the lower carrier concentration, so as to help to realize larger local electromagnetic state density difference and corresponding radiant heat flow regulation capability.
In order to fully exploit and convert the difference in local electromagnetic state density constructed of layered semiconductor material in a first radiator into a difference in radiant heat flow, the present invention provides a second radiator that is oriented to match the first radiator. In some embodiments of the invention, the second radiator is a narrowband radiator consisting essentially of a polar material; in other embodiments of the invention, the second radiator is a broadband radiator consisting essentially of a doped semiconductor material.
In some embodiments of the invention, the second radiator is a narrowband radiator, which is primarily characterized by peaks that can support localized electromagnetic state densities within a narrower frequency band. In some embodiments, the second radiator comprises a layer of polar material selected from one or a combination of two or more of the following: sodium chloride (NaCl), potassium bromide (KBr), potassium chloride (KCl), barium fluoride (BaF 2), cesium fluoride (SrF 2), calcium fluoride (CaF 2), lithium fluoride (LiF), gallium nitride (GaN), magnesium oxide (MgO), cesium bromide (CsBr), cesium iodide (CsI), zinc sulfide (ZnS), silver bromide (AgBr), silver chloride (AgCl), cubic boron nitride (cBN), silicon carbide (SiC), silicon dioxide (SiO 2), hexagonal boron nitride (hBN), zinc selenide (ZnSe), sapphire, cadmium telluride (CdTe), silicon dioxide (SiO 2), and the like; preferred are sodium chloride (NaCl), potassium bromide (KBr), potassium chloride (KCl), barium fluoride (BaF 2), cesium fluoride (SrF 2), calcium fluoride (CaF 2), lithium fluoride (LiF), gallium nitride (GaN), magnesium oxide (MgO), cesium bromide (CsBr), cesium iodide (CsI), zinc sulfide (ZnS), silver bromide (AgBr), silver chloride (AgCl).
The invention provides the polar material for the second radiator, and the frequency band with larger difference of local electromagnetic state density constructed by the semiconductor layered material can be screened by adopting the proper polar material, so that the effective regulation and control of radiation heat flow are realized.
By way of example, fig. 5 shows five different polar materials, potassium bromide (KBr), potassium chloride (KCl), barium fluoride (BaF 2), silicon carbide (SiC), and cubic boron nitride (cBN), respectively, and shows the local electromagnetic state density characteristics of these five polar material layers having a semi-infinite planar structure; the ratio of local electromagnetic state density changes of the intrinsic silicon void films is also shown for ease of comparison and comparison.
As can be seen from fig. 5, the five polar materials can form a very sharp local electromagnetic state density peak in a specific frequency range, and when the difference of the local electromagnetic state densities which can be induced by the semiconductor layered material is larger in the frequency range corresponding to the peaks, the radiation heat flow regulating capability which can be formed is larger. Thus, for intrinsic silicon films, a greater radiant heat flux modulating capability is achieved by matching these five materials, with potassium bromide matching the intrinsic silicon film being optimal.
In some embodiments of the present invention, the second radiator is a broadband radiator, which is mainly characterized by having a larger local electromagnetic state density in a wider low-frequency range, and the local electromagnetic state density in the low-frequency range does not change significantly with changes of external environments (such as temperature, electric field, magnetic field, pressure, etc.). In some embodiments, the second radiator includes a doped semiconductor material layer, where the doped semiconductor material has a carrier doping concentration greater than 10 15cm-3, and the local electromagnetic state density is easy to change significantly with the change of the external environment due to the higher doped carrier concentration.
By way of example, fig. 6 shows the local electromagnetic state densities of doped silicon (n-type doping, doping concentration of 10 18cm-3) films of different thicknesses at 300K and 1000K, respectively; the ratio of local electromagnetic state density changes of the intrinsic silicon void films is also shown for ease of comparison and comparison.
As can be seen from fig. 6, the doped silicon with semi-infinite planar structure and the doped silicon film with different thickness can support a large local electromagnetic state density in the low frequency region, which makes it possible to fully utilize the large difference of the local electromagnetic state density generated by the semiconductor layered material in the low frequency region. Meanwhile, as the doped silicon film is thinned, the local electromagnetic state density of the doped silicon film in a high-frequency region is continuously reduced, and the surface can weaken electromagnetic waves with smaller transverse wave vector kappa propagating in the doped silicon film by thinning the doped silicon film, so that the change of a high-kappa electromagnetic mode dominates the change of radiation heat flow, and more efficient heat flow regulation and control are realized.
In an embodiment, referring to fig. 7, the first radiator is disposed in one of the following three manners:
(a) The first radiator is formed by a semiconductor material layer and is arranged in a suspending way;
(b) The first radiator comprises a semiconductor material layer and a first substrate, wherein the first substrate is made of a nonmetallic material, the semiconductor material layer covers the first substrate, and the first radiator is arranged in a suspending manner;
(c) The first radiator comprises a semiconductor material layer and a first substrate, wherein the first substrate comprises a first metal material layer, and the semiconductor material layer covers the first substrate.
In an embodiment, referring to fig. 8, the second radiator is disposed in one of the following three manners:
(a) The second radiator is formed by a polar material layer and is arranged in a suspending way;
(b) The second radiator comprises a polar material layer and a second substrate, the second substrate is made of a nonmetallic material, the polar material layer covers the second substrate, and the second radiator is arranged in a suspending manner;
(c) The second radiator comprises a polar material layer and a second substrate, wherein the second substrate comprises a first metal material layer, and the polar material layer covers the second substrate.
In an embodiment, referring to fig. 9, the second radiator is disposed in one of the following two manners:
(a) The second radiator is formed by a doped semiconductor material layer and is arranged in a suspending way;
(b) The second radiator comprises a doped semiconductor material layer and a second substrate, the second substrate is made of a nonmetallic material, the doped semiconductor material layer covers the second substrate, and the second radiator is arranged in a suspending manner;
(c) The second radiator comprises a doped semiconductor material layer and a second substrate, wherein the second substrate comprises a first metal material layer, and the doped semiconductor material layer covers the second substrate.
In the present invention, an important factor in achieving large heat flow regulation performance is to attenuate the contribution of low-k modes propagating inside the radiator, which are related to the volume of the radiator, in general, the larger the radiator volume, the more low-k modes, and the worse the heat flow regulation performance. Therefore, the radiator used in the present invention is arranged in one of the following ways: one of the substrates is a substrate containing a metal material layer, and the metal material layer has higher reflectivity, so that the heat radiation on the back of the radiator can be shielded, namely, other materials on the back of the radiator can not influence radiation heat exchange, and the volume of the radiator corresponding to the low-k mode can only be the volume of the radiator on the metal layer, so that the quantity of the low-k mode is effectively limited; however, if a substrate comprising a metal layer is not used, the radiator cannot be too thick and needs to be suspended (i.e. there cannot be any other radiator on the back of the radiator) in order to avoid introducing too much low-k mode, and under the condition of suspended arrangement, the radiator may not comprise a substrate or comprise a substrate made of a non-metal material, such as a polar material, and this arrangement can also limit the contribution of the low-k mode. In practical use, the suspending mode can be a cantilever supporting mode.
According to the present invention, when the semiconductor material layer covers the first substrate including the metal material layer, the first radiator may be suspended or not suspended, which is within the scope of the present invention.
According to the present invention, the term "semiconductor material" includes both intrinsic semiconductor material and doped semiconductor material, a generic concept of both.
In an embodiment, the layer of semiconductor material is comprised of a semiconductor material.
In an embodiment, the semiconductor material layer has a volume ratio of 30% -100% (V/V), such as 30%, 40%, 50%, 60%, 70%, 80%, 90%, 100%, etc.
In one embodiment, the semiconductor material is porous or non-metallic (e.g., polar) when the semiconductor material is less than 100% by weight.
In some embodiments, the semiconductor material layer is not entirely formed of semiconductor material, which may be due to unavoidable impurities introduced during device fabrication, or due to the inclusion of voids in the semiconductor material layer or the filling of other non-semiconductor materials for cost reasons, and such technical adaptations and modifications are within the scope of the invention. According to the technical scheme, when the volume ratio of the semiconductor material in the semiconductor material layer is more than or equal to 30%, a large contribution can be formed on the local electromagnetic state density of the first radiator, so that the semiconductor material layer has remarkably excellent heat flow regulation performance.
The filled material can be a nonmetallic material, in particular a polar material, because the metallic material can induce surface plasmon polaritons with wide spectrum which are not easy to regulate and control, so that the change of the local electromagnetic state density is weakened, the polar material only has surface phonon polaritons which are not easy to regulate and control in an extremely narrow frequency band, and the local electromagnetic state density is not greatly influenced in a wider frequency band, so that the first radiator can still form a larger difference of the local electromagnetic state density.
In one embodiment, the layer of polar material is comprised of a polar material.
In one embodiment, the polar material layer has a volume ratio of polar material of 30% -100% (V/V); for example, 30%, 40%, 50%, 60%, 70%, 80%, 90%, 100%, etc.
In one embodiment, the first substrate or the second substrate contains not only a metallic material layer but also a nonmetallic material layer.
In one embodiment, the first substrate or the second substrate comprises a plurality of metallic material layers and non-metallic material layers.
In an embodiment, referring to fig. 10, the radiant heat flow regulating device is a thermal diode, which includes a first radiator and a second radiator disposed opposite to each other.
In an embodiment, referring to fig. 11, the radiant heat flow regulating device is a radiant heat tertiary tube, which includes a first radiator and two second radiators, and the first radiator is sandwiched between the two second radiators.
In one embodiment, the radiant heat flux regulating device (denoted as i-Si-KBr in FIG. 12) comprises a first radiator and a second radiator, wherein the first radiator is composed of an intrinsic silicon film with the thickness of 10nm, and the second radiator is composed of a potassium bromide film with the thickness of 10 nm; in another embodiment, the radiant heat flux regulating device (denoted as i-Si-d-Si in fig. 12) comprises a first radiator consisting of an intrinsic silicon film having a thickness of 10nm and a second radiator consisting of a doped silicon (doping concentration 10 18cm-3) film having a thickness of 10 nm. The change of the rectification ratio when the distance between the two radiators is changed is calculated and analyzed, and the result is shown in fig. 12. As can be seen from fig. 12, when the distance between the two radiators is 1 μm, the rectification ratio of three orders of magnitude or more can be still achieved.
In the following, the radiant heat flux regulating device of the present invention will be described typically as a thermal diode, but this is not meant to limit the radiant heat flux regulating device of the present invention to be used only as a thermal diode, which may be used to implement the functions of a thermal transistor, a thermal switch, etc. by changing the triggering mechanism or by combining with other components.
Example 1
The present embodiment provides a first radiator composed of an intrinsic silicon material layer, and calculates and analyzes a local electromagnetic state density at 100nm above the first radiator, where relevant parameters include: the high temperature end temperature was 1000K, the low temperature end temperature was 300K, and the analysis results are shown in FIG. 13.
In fig. 13, (a) the intrinsic silicon material layer is bulk, equivalently a semi-infinite plane in thermal radiation analysis; (d) the intrinsic silicon material layer has a thickness of 10nm; in the graph below (a) (d), the local electromagnetic state densities of the intrinsic silicon material layer under the condition of temperature change are shown, respectively. Each point in the graph corresponds to a specific frequency and a local electromagnetic state density of transverse wave vectors, and the brighter the local electromagnetic state density, the more electromagnetic modes representing the mode.
In the radiation heat flow regulating device provided by the invention, the key point for realizing heat rectification is that when the temperature bias direction is changed, the carrier concentration in the semiconductor material layer of the first radiator is changed drastically, so that the intensity of the high-k mode in the low-frequency region is changed drastically. As can be seen from fig. 13, the intensity of low- κ modes (electromagnetic modes that can propagate inside the intrinsic silicon material) in the high-frequency region hardly changes with temperature, because these electromagnetic modes are mainly affected by the real part ε 'of the dielectric constant of intrinsic silicon, while ε' hardly changes with temperature, and thus these low- κ modes have a great negative effect on the performance of thermal rectification. When the semi-infinite intrinsic silicon block is changed into the intrinsic silicon film with the limited thickness, the low-k modes are obviously weakened, and the high-k modes in the low-frequency region are hardly influenced, so that the thermal rectification performance is obviously improved.
Example 2
The present embodiment provides a first radiator composed of an intrinsic silicon material layer and a first substrate composed of silver. The local electromagnetic state densities at 10nm and 100nm above the first radiator are calculated and analyzed, and relevant parameters include: the high temperature end temperature was 1000K, the low temperature end temperature was 300K, and the analysis results are shown in FIG. 14.
Although a suspended membrane structure may be implemented (e.g., by cantilever support, etc.), the present embodiment provides the first radiator with a base for easier processing and assembly. In order to shield the influence of the back side radiation and to improve the mechanical strength of the device at the same time, the present embodiment provides a metal substrate with high reflectivity under the intrinsic silicon thin film. As can be seen from fig. 14, when a bulk (equivalent to a semi-infinite planar structure) silver substrate is added, a large difference in local electromagnetic state density can still be formed at low frequency regions at a suitable intrinsic silicon film thickness.
According to the invention, the calculation analysis shows that the metal layer in the substrate can also contribute to the local electromagnetic state density above the radiator, and the local electromagnetic state density formed by the metal layer at different temperatures has small change, so that if the semiconductor material layer is too thin, the metal layer in the substrate is closer to the surface of the radiator, so that the metal layer can greatly contribute to the total local electromagnetic state density, and the difference of the local electromagnetic state density above the semiconductor material layer at different temperatures is reduced, thereby being unfavorable for realizing large heat flow regulation performance. If an excessively thick layer of semiconductor material is used in order to separate the metal layer from the radiator surface, more low-k modes are introduced, which also do not contribute to the radiant heat flow regulation. Therefore, according to the radiant heat flow regulating device provided by the invention, when the first radiator comprises the first substrate comprising the metal layer, the thickness of the semiconductor material layer needs to be moderate (10 nm-10 mm), and cannot be too thin or too thick.
Example 3
The embodiment provides a radiant heat flow regulating device without a substrate, which comprises a first radiator and a second radiator, wherein the first radiator is made of an intrinsic silicon material, and the second radiator is made of a potassium bromide material; the first radiator is arranged in a suspending manner; the distance between the first radiator and the second radiator is 100nm. The present embodiment analyzes the thermal rectification performance of the radiant heat flow regulating device when the first radiator and the second radiator have different thicknesses.
The thermal rectification performance of the radiation heat flow regulating device with the following three typical structures is analyzed in the embodiment, and related parameters include: the high temperature end temperature was 1000K, the low temperature section temperature was 300K, and the analysis results are shown in Table 1 and FIG. 15.
Table 1 performance of thermal diodes based on combinations of intrinsic silicon and potassium bromide of different structures
In Table 1, the thickness of the thin film is 10nm, and the bulk means that the thickness is set to be semi-infinite in calculation (a layered planar structure of a sufficient thickness, which is equivalent to a plane of semi-infinite in the thermal radiation analysis).
In fig. 15, (a) (b) (c) shows the structure types of the radiant heat flow regulating device, respectively, (a) shows the structure type as "intrinsic silicon bulk-potassium bromide bulk" in table 1, (b) shows the structure type as "intrinsic silicon thin film-potassium bromide bulk" in table 1, and (c) shows the structure type as "intrinsic silicon thin film-potassium bromide thin film" in table 1; in the figures below (a) (b) (c), the radiant heat exchange coefficient diagrams of the thermal diode of the structure under forward and reverse temperature bias conditions are shown, respectively. Each point in the graph corresponds to an energy transmission channel at a specific frequency and transverse wave vector, and the brighter the energy transmission channel, the stronger the energy transmission capability of the channel.
As can be seen from fig. 15, when the intrinsic silicon and the potassium bromide are both in semi-infinite bulk structures, the thermal diode has more low-k modes in both forward and reverse conditions, so that there is little difference in forward and reverse heat flows, and the rectification ratio is only 0.03; when the intrinsic silicon block material is changed into a suspended 10nm film, the rectification ratio is increased to 1.67 multiplied by 10 3, which is mainly beneficial to the low-k mode to be obviously weakened; when the semi-infinite potassium bromide bulk material is also changed into a suspended 10nm film structure, the rectification ratio can be further improved to 2.52 multiplied by 10 3, which is mainly beneficial to the coupling of phonon polaritons on two sides of the potassium bromide film, so that the peak of the local electromagnetic state density of the potassium bromide film is subjected to red shift (namely, low-frequency shift), and at the moment, the intrinsic silicon semiconductor in the corresponding frequency section can form larger difference of the local electromagnetic state density along with temperature change, so that the rectification ratio is further improved.
The present example also analyzed the change in the rectification ratio of the intrinsic silicon and potassium bromide combined thermal diode under a suspended film structure with film thickness. The analysis results are shown in FIG. 16. As can be seen from fig. 16, the thermal diode formed by combining the intrinsic silicon thin film and the potassium bromide thin film provided by the invention still has better thermal rectification performance in a larger thin film thickness range: when the thickness of the intrinsic silicon film is 1-1000nm and the thickness of the potassium bromide film is 1-1000nm, the rectification ratio of the radiation heat flow regulating device is 1.67 multiplied by 10 3-3.07×103.
Example 4
The embodiment provides a radiation heat flow regulating device without a substrate, which comprises a first radiator and a second radiator, wherein the first radiator is made of an intrinsic silicon material, and the second radiator is made of a doped silicon (doping concentration is 10 18cm-3) material; the first radiator is arranged in a suspending manner; the distance between the first radiator and the second radiator is 100nm. The present embodiment analyzes the thermal rectification performance of the radiant heat flow regulating device when the first radiator and the second radiator have different thicknesses.
The thermal rectification performance of the radiation heat flow regulating device with the following three typical structures is analyzed in the embodiment, and related parameters include: the high temperature end temperature was 1000K, the low temperature section temperature was 300K, and the analysis results are shown in Table 2 and FIG. 17.
Table 2 performances of intrinsic silicon and doped silicon based thermal diodes of different structures
In Table 2, the thickness of the thin film is 10nm, and the bulk means that the thickness is set to be semi-infinite in calculation (a layered planar structure of a sufficient thickness, which is equivalent to a plane of semi-infinite in the thermal radiation analysis).
In fig. 17, (a) (b) (c) shows the structure types of the radiant heat flow regulating device, respectively, (a) indicates the structure type as "intrinsic silicon bulk-doped silicon bulk" in table 2, (b) indicates the structure type as "intrinsic silicon thin film-doped silicon bulk" in table 2, and (c) indicates the structure type as "intrinsic silicon thin film-doped silicon thin film" in table 2; in the figures below (a) (b) (c), the radiant heat exchange coefficient diagrams of the thermal diode of the structure under forward and reverse temperature bias conditions are shown, respectively. Each point in the graph corresponds to an energy transmission channel at a specific frequency and transverse wave vector, and the brighter the energy transmission channel, the stronger the energy transmission capability of the channel.
As can be seen from fig. 17, when the intrinsic silicon and the doped silicon are both semi-infinite bulk structures, the thermal diode has more low-k modes in both forward and reverse conditions, so that there is little difference in forward and reverse heat flows, and the rectification ratio is only 0.005; when the intrinsic silicon block material is changed into a suspended 10nm film, the rectification ratio is increased to 4.66 multiplied by 10 3, which is mainly beneficial to the low-k mode to be obviously weakened; when the semi-infinite doped silicon block material is also changed into a suspended 10nm film structure, the rectification ratio can be further improved to 1.27 multiplied by 10 4, which is mainly beneficial to the coupling of surface plasma polaritons on two sides of the doped silicon film, so that the peak of the local electromagnetic state density of the doped silicon film is subjected to red shift (namely, low-frequency shift), and at the moment, the intrinsic silicon semiconductor in the corresponding frequency section can form larger difference of the local electromagnetic state density along with temperature change, so that the rectification ratio is further improved.
The present example also analyzed the change in the rectification ratio of the intrinsic silicon and doped silicon combined thermal diode under a suspended film structure with film thickness. The analysis results are shown in FIG. 18. As can be seen from fig. 18, the thermal diode formed by combining the intrinsic silicon thin film and the doped silicon thin film provided by the invention can still have better thermal rectification performance in a larger thin film thickness range: when the thickness of the intrinsic silicon film is 1-1000nm and the thickness of the doped silicon film is 1-1000nm, the rectification ratio of the radiation heat flow regulating device is 2 multiplied by 10 3-4.67×103.
Example 5
The embodiment provides a radiation heat flow regulating device comprising a substrate, which comprises a first radiator and a second radiator, wherein the first radiator is composed of an intrinsic silicon film and the first substrate, and the second radiator is composed of a potassium bromide film and the second substrate; the first substrate and the second substrate are both composed of silver; the distance between the first radiator and the second radiator is 10nm; the schematic structure of the radiant heat flow regulating device is shown in fig. 19. The embodiment analyzes the thermal rectification performance of the radiant heat flow regulating device when the intrinsic silicon film and the potassium bromide film have different thicknesses, and the related parameters include: the high temperature end temperature was 1000K, the low temperature end temperature was 300K, and the analysis results are shown in FIG. 20.
As can be seen from fig. 20, for the thermal diode of the silver-containing substrate, the thickness of both intrinsic silicon and potassium bromide cannot be too thin, otherwise the rectification ratio is small due to the excessive participation of the silver substrate in the radiative heat transfer; when the thickness of the intrinsic silicon film is 10nm-1mm and the thickness of the potassium bromide film is 1 mu m-1mm, the rectification ratio of the radiation heat flow regulating device can reach more than 200.
Example 6
The embodiment provides a radiation heat flow regulating device comprising a substrate, which comprises a first radiator and a second radiator, wherein the first radiator is formed by an intrinsic silicon film and the first substrate, and the second radiator is formed by a doped silicon (doping concentration is 10 18cm-3) film and the second substrate; the first substrate and the second substrate are both composed of silver; the distance between the first radiator and the second radiator is 10nm; the schematic structure of the radiant heat flow regulating device is shown in fig. 21. The embodiment analyzes the thermal rectification performance of the radiant heat flow regulating device when the intrinsic silicon film and the doped silicon film have different thicknesses, and the related parameters include: the high temperature end temperature was 1000K, the low temperature end temperature was 300K, and the analysis results are shown in FIG. 22.
As can be seen from fig. 22, for the thermal diode of the silver-containing substrate, the thickness of both intrinsic silicon and doped silicon cannot be too thin, otherwise the rectification ratio is small due to the silver substrate taking excessive part in radiative heat transfer; when the thickness of the intrinsic silicon film is 10 mu m-100 mu m and the thickness of the doped silicon film is 100 mu m-1mm, the rectification ratio of the radiation heat flow regulating device can reach about 80. The thermal diode of this embodiment can achieve a smaller rectification ratio than the thermal diode of embodiment 3, mainly due to the larger kappa mode resulting from the separation of the metal substrate with the doped semiconductor material compared to the polar material.
Example 7
The embodiment provides a radiation heat flow regulating device comprising a nonmetallic substrate, which comprises a first radiator and a second radiator, wherein the first radiator is composed of an intrinsic silicon film and a first substrate, and the second radiator is composed of a doped silicon (doping concentration is 6 multiplied by 10 18cm-3) film, a potassium bromide film and a second substrate; the first substrate and the second substrate are both composed of silver; the distance between the first radiator and the second radiator is 10nm; the schematic structure of the radiant heat flow regulating device is shown in fig. 23. The embodiment analyzes the thermal rectification performance of the radiant heat flow regulating device when the thickness of the doped silicon film is 1nm, and the intrinsic silicon film and the doped silicon film have different thicknesses, and the related parameters include: the high temperature end temperature was 1000K, the low temperature end temperature was 300K, and the analysis results are shown in FIG. 24.
In comparison with the thermal diode provided in embodiment 4, the thermal diode of this embodiment incorporates a layer of polar material as a gap between the doped semiconductor material layer and the second substrate. Since the real part of the dielectric constant epsilon' of potassium bromide is smaller than doped silicon, the use of potassium bromide to separate silver substrates does not introduce excessive low-k modes. As can be seen from FIG. 24, when the thickness of the intrinsic silicon film is 10nm-1mm and the thickness of the potassium bromide film is 1 μm-1mm, the rectification ratio of the radiant heat flow regulating device can reach more than 400; when the thickness of the intrinsic silicon film is 20nm-1mm and the thickness of the potassium bromide film is 1 mu m-1mm, the rectification ratio of the radiation heat flow regulating device can reach about 700.
Example 8
The present embodiment provides a radiant heat flow regulating device including a substrate, which includes a first radiator composed of an intrinsic silicon thin film (thickness of 10 nm) and a first substrate, and a second radiator composed of cubic boron nitride; the first substrate is composed of potassium bromide, the thickness of the intrinsic silicon film is 10nm, and the first radiator is arranged in a suspending way; the second radiator is a block material; the distance between the first radiator and the second radiator is 100nm; the schematic structure of the radiant heat flow regulating device is shown in fig. 25.
The present embodiment analyzes the thermal rectification performance of the radiant heat flow regulating device when the first substrates have different thicknesses, and the related parameters include: the high temperature end temperature was 1000K, the low temperature end temperature was 300K, and the analysis results are shown in Table 3. For comparison, the results of the performance analysis are also listed in table 3, where the first substrate is absent, i.e., the first substrate has a thickness of 0.
TABLE 3 thermal diode Performance for Potassium bromide substrates of different thicknesses
According to the results shown in table 3, when the first radiator adopts a suspended arrangement, the semiconductor material layer can be covered on the nonmetallic substrate, and such a configuration can also obtain a larger thermal rectification performance. However, as the thickness of the non-metallic substrate layer increases, its contribution to the near field thermal radiation increases, while the radiant heat flow contributed by the non-metallic substrate is insensitive to changes in the temperature bias direction of the thermal diode, thus resulting in a gradual decrease in rectifying performance.
In addition, it was found by analysis that a similar situation is also found when a second substrate made of a non-metal is used for the second radiator. When the second radiator is suspended, the polar material layer or the doped semiconductor material layer in the second radiator is covered on the second substrate made of nonmetallic materials, and good thermal rectification performance can be obtained.
The present invention is not limited to the above-mentioned embodiments, and any changes or substitutions that can be easily understood by those skilled in the art within the technical scope of the present invention are intended to be included in the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (26)
1. A radiation heat flow regulating device based on a semiconductor material, which is characterized by comprising a first radiator and a second radiator, wherein the first radiator and the second radiator are oppositely arranged;
The second radiator is provided with one or a combination of two of a polar material layer and a doped semiconductor material layer;
the first radiator is provided with a semiconductor material layer, and the semiconductor material layer contains one or two of an intrinsic semiconductor material and a doped semiconductor material with a carrier doping concentration of less than 10 16 cm-3; the thickness of the semiconductor material layer is more than 10 nm and less than or equal to 1000 nm;
The first radiator is arranged in one of the following modes:
(a) The first radiator is formed by the semiconductor material layer and is suspended;
(b) The first radiator also comprises a first substrate, the first substrate is made of a nonmetallic material, the semiconductor material layer covers the first substrate, and the first radiator is arranged in a suspending way;
(c) The first radiator further comprises a first substrate, the first substrate comprises a first metal material layer, and the semiconductor material layer covers the first substrate.
2. The radiant heat flux regulating device of claim 1, wherein the first and second radiators are spaced between 1 nm and 10mm.
3. The radiant heat flux regulating device of claim 1, wherein the first and second radiators are spaced between 10 nm μm and 100 μm apart.
4. The radiant heat flux modulating device of claim 1, wherein the semiconductor material layer comprises between 30% and 100% by volume semiconductor material.
5. The radiant heat flux regulating device of claim 1, wherein the semiconductor material in the layer of semiconductor material is selected from one or more of silicon, germanium, gallium phosphide, gallium arsenide, indium arsenide, boron, tellurium, selenium, gallium nitride, indium nitride, aluminum oxide, silicon carbide, zinc oxide, silicon nitride, gallium antimonide, zinc sulfide, cadmium telluride, mercury telluride, cuprous bromide, cuprous iodide, bismuth telluride, bismuth selenide, bismuth sulfide, arsenic telluride.
6. The radiant heat flux modulating device of claim 1, wherein the first layer of metal material comprises a volume fraction of metal material of 20% or more.
7. The radiant heat flux modulating device of claim 1, wherein the first layer of metallic material is selected from the group consisting of silver, gold, and aluminum.
8. The radiant heat flux regulating device of claim 1, wherein a distance between a midpoint of a vertical line between the first and second radiators and the first metal material layer is from 10 nm to 100 mm.
9. The radiant heat flux modulating device of claim 1, wherein the first substrate has a thickness of from 1nm to 100 mm.
10. The radiant heat flux modulating device of claim 1, wherein the first layer of metal material has a thickness of from 1nm to 100 mm.
11. The radiant heat flux modulating device of claim 1, wherein the polar material layer comprises a volume fraction of polar material in the range of 30% to 100%.
12. The radiant heat flux modulating device of claim 1, wherein the polar material in the layer of polar material is selected from one or more of sodium chloride, potassium bromide, potassium chloride, barium fluoride, cesium fluoride, calcium fluoride, lithium fluoride, gallium nitride, magnesium oxide, cesium bromide, cesium iodide, zinc sulfide, silver bromide, silver chloride, cubic boron nitride, silicon carbide, silicon dioxide, hexagonal boron nitride, zinc selenide, sapphire, cadmium telluride, silicon dioxide.
13. The radiant heat flux modulating device of claim 1, wherein the layer of polar material has a thickness of from 1 nm to 100 mm.
14. The radiant heat flux modulating device of claim 1, wherein the layer of polar material has a thickness of from 1 nm to 10 mm.
15. The radiant heat flux regulating device of claim 1, wherein in the second radiator, the doped semiconductor material layer is comprised of a doped semiconductor material having a carrier doping concentration greater than 10 15 cm-3.
16. The radiant heat flux regulating device of claim 1, wherein in the second radiator, the doped semiconductor material is selected from one or more of silicon, germanium, gallium phosphide, gallium arsenide, indium arsenide, boron, tellurium, selenium, gallium nitride, indium nitride, aluminum oxide, silicon carbide, zinc oxide, silicon nitride, gallium antimonide, zinc sulfide, cadmium telluride, mercury telluride, cuprous bromide, cuprous iodide, bismuth telluride, bismuth selenide, bismuth sulfide, arsenic telluride.
17. The radiant heat flux regulating device of claim 1, wherein the doped semiconductor material body layer has a thickness in the range of from 1 nm to 100 mm in the second radiator.
18. The radiant heat flux regulating device of claim 1, wherein the doped semiconductor material body layer has a thickness of from 1 nm to 10mm in the second radiator.
19. The radiant heat flux modulating device of claim 1, wherein the second radiator further comprises a second substrate, one or a combination of two of the polar material layer and the doped semiconductor material layer overlying the second substrate;
The second substrate comprises a second metal material layer, wherein the metal material in the second metal material layer accounts for more than 20% (V/V).
20. The radiant heat flux modulating device of claim 19, wherein in the second layer of metal material, the metal material is selected from one or a combination of two or more of silver, gold and aluminum.
21. The radiant heat flux regulating device of claim 19, wherein a vertical line midpoint between the first and second radiators is at a distance of from 10 nm to 100 mm from the second layer of metal material.
22. The radiant heat flux modulating device of claim 19, wherein the layer of second metal material has a thickness of from 1 nm to 100 mm.
23. The radiant heat flux regulating device of claim 1, wherein one or more radiators are further disposed between the first radiator and the second radiator.
24. Use of a radiant heat flux modulating device according to any one of claims 1-23 for heat flux modulation.
25. A heat flow regulator comprising the radiant heat flow regulating device of any one of claims 1-23.
26. The heat flow regulator of claim 25, wherein the heat flow regulator is a thermal diode, a thermal triode, or a thermal switch.
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