CN115377693A - Superstructure with simultaneously adjustable temperature and infrared spectral band emissivity and design method thereof - Google Patents
Superstructure with simultaneously adjustable temperature and infrared spectral band emissivity and design method thereof Download PDFInfo
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Abstract
The invention provides a superstructure with simultaneously adjustable temperature and infrared spectral band emissivity and a design method thereof, wherein the superstructure comprises: pyroelectric structures and thermochromic thin films; the thermoelectric structure realizes the regulation and control of the temperature of the superstructure through the thermoelectric effect of the semiconductor; the thermotropic phase change material of the thermotropic color changing film can generate phase change in the process of the temperature change of the superstructure. The temperature of the thermochromic film is changed by the current loaded on the thermoelectric structure, so that the optical parameters of the thermochromic material are changed, and the surface emissivity of the whole structure is changed. Therefore, the effect of simultaneously and dynamically adjusting the temperature and the infrared emissivity can be realized. In addition, the superstructure has simple manufacturing process, low manufacturing cost and convenient use, and provides an effective technical approach for developing electromagnetic materials dynamically regulated and controlled by wide-range infrared radiation.
Description
Technical Field
The invention belongs to the technical field of dynamic regulation and control of electromagnetic waves, and particularly relates to a superstructure with simultaneously adjustable temperature and infrared spectral band emissivity and a design method thereof.
Background
With the rapid development of detection technology, infrared detection, night vision and other technologies are more and more widely applied to related fields, so that the development of electromagnetic materials capable of adjusting infrared radiation characteristics is urgently needed. Therefore, researchers at home and abroad carry out a large amount of research and obtain a series of research results. For example, in a publication of "design, preparation and characterization of infrared low-radiation film" in journal of "infrared technology" of 3 rd issue in 2022, a one-dimensional photonic crystal structure is designed by using Ge and ZnS materials to realize infrared low-radiation characteristics; chinese invention patent CN103614058B discloses an infrared stealth coating and a preparation method and application thereof, and lanthanum-based rare earth compound is used as a filler to realize low infrared emissivity. However, with the switching of the environment, different infrared radiation characteristics are required under different environmental backgrounds, and at this time, the static infrared low-radiation material is difficult to meet the requirements of multiple scenes, so that an electromagnetic material with dynamically adjustable infrared radiation characteristics is required to be further developed. The existing electromagnetic material can only be used for independently and dynamically regulating and controlling the emissivity or the temperature which influences the infrared radiation characteristic, so that the regulation and control range of the infrared radiation characteristic is limited.
Disclosure of Invention
In order to solve the technical problems, the invention provides the superstructure with the temperature and the infrared spectrum emissivity being simultaneously adjustable and the design method thereof.
In order to achieve the above object, one aspect of the present invention provides a superstructure with adjustable temperature and emissivity in the infrared spectrum, comprising:
pyroelectric structures and thermochromic thin films; the thermoelectric structure realizes the regulation and control of the temperature of the superstructure through the thermoelectric effect of a semiconductor; the thermotropic phase change material of the thermotropic color changing film generates phase change in the process of temperature change of the superstructure.
Further, the thermochromic thin film is an FP resonant cavity, and the FP resonant cavity comprises: the thermotropic phase change material structure comprises a medium material structure, a first metal structure, a first substrate and a second metal structure which are arranged below the thermotropic phase change material structure in sequence.
Furthermore, the thermochromic thin film comprises a particle coating layer of thermotropic phase change material particles, and a first metal structure, a first substrate and a second metal structure are arranged below the thermochromic thin film in sequence.
Further, in the infrared band [ lambda ] min ,λ max ]Within the range, when the thermotropic phase change material structure is in a metal state and an insulation state respectively, the superstructure is in a high emission state and a low emission state respectively, and the difference value between the high emission rate and the low emission rate is more than or equal to 0.2.
Furthermore, the material of the thermotropic phase change material structure is VO 2 Or a GST alloy; the dielectric material structure is an infrared transparent material, the first metal structure is an infrared band high-reflection material, the thickness is 30-100 nm, the second metal structure is a conductor, and the first substrate is a high-thermal-conductivity material.
Further, the thermotropic phase change material particles are VO 2 Particles, wherein the substrate material is an infrared transparent material; the first metal structure is made of an infrared band high-reflection material, the second metal structure is a conductor, and the first substrate is made of a high-thermal-conductivity material.
Further, the infrared transparent material is infrared nondestructive resin; the first metal structure is Ag or Al or Au or Cu; the second metal structure is Cu, and the first substrate is a ceramic substrate or Rogers TC350 TM Plus laminates.
Further, the thermoelectric structure includes: the third metal structure is connected with the thermochromic film, the P-type semiconductor crystal grain and the N-type semiconductor crystal grain of the third metal structure, and the second substrate; the second metal structure of the thermochromic film, the P-type semiconductor crystal grain, the N-type semiconductor crystal grain and the third metal structure form a complete circuit with a thermoelectric structure, wherein the second metal structure or the third metal structure is optionally connected with an external circuit, and current for regulating and controlling the thermoelectric structure is introduced.
Furthermore, the third metal structure is a conductor, the second substrate is made of a high-thermal-conductivity material, and the P-type semiconductor crystal grains and the N-type semiconductor crystal grains are made of materials with good thermoelectric properties.
Further, the third metal structure is Cu; the second substrate is a ceramic substrate or Rogers TC350 TM A Plus laminate; the P-type semiconductor crystal grain and the N-type semiconductor crystal grain are Bi 2 Te 3 。
Furthermore, the thermochromic film is manufactured by adopting a magnetron sputtering process, the thermoelectric structure is manufactured by adopting a refrigerating sheet processing process, and the thermochromic film and the refrigerating sheet are bonded together by adopting heat-conducting glue.
The invention also provides a design method of the superstructure with simultaneously adjustable temperature and infrared spectral band emissivity, which comprises the following steps:
s1, selecting materials of a thermoelectric structure and a thermochromic thin film;
s2, optimizing geometric parameters and arrangement mode of the superstructure, and enabling the difference between high emissivity and low emissivity to be larger than or equal to 0.2 at high temperature and low temperature.
Has the beneficial effects that:
the superstructure of the invention is based on the existing thermoelectric structure, and further utilizes the properties of low-loss insulation state and high-loss metal state before and after the phase change of the thermotropic phase change material to construct a thermotropic color changing film to regulate and control the radiance of an infrared spectrum section. The temperature of the thermochromism film is changed by controlling the current loaded on the thermoelectric structure, the superstructure has low infrared emissivity when the temperature is lower than the phase change temperature of the thermochromism phase change material, and the superstructure has high infrared emissivity when the temperature is higher than the phase change temperature of the thermochromism phase change material. In addition, the superstructure of the invention has simple manufacturing process, low manufacturing cost and convenient use, and provides an effective technical approach for developing electromagnetic materials dynamically regulated and controlled by wide-range infrared radiation.
Drawings
The above and other objects and features of the present invention will become more apparent from the following description taken in conjunction with the accompanying drawings which illustrate, by way of example, the present invention in which:
FIG. 1 is a schematic diagram of a superstructure with adjustable temperature and emissivity in the infrared spectrum in accordance with example 1 of the present disclosure;
FIG. 2 is a schematic diagram of a superstructure comprised of a thermochromic film and a thermoelectric structure in accordance with example 1 of the present disclosure;
FIG. 3 is a schematic diagram of a superstructure with adjustable temperature and emissivity in the infrared spectrum in accordance with example 2 of the present disclosure;
FIG. 4 shows the simulation results of thermochromic thin films in example 1 of the present disclosure;
FIG. 5 is a graph of superstructure surface emissivity as a function of temperature in accordance with disclosed example 1;
FIG. 6 is a graph showing the variation of the surface temperature of the superstructure in accordance with embodiment 1 of the present disclosure;
fig. 7 is a radiation exitance contrast curve of a superstructure with a low emissivity, high emissivity sample in disclosed example 1.
Wherein, 11-P type semiconductor crystal grain; a 12-N type semiconductor die; 21-thermotropic phase change material structure; 21-1-thermotropic phase change material particles; 22-dielectric material structure; 22-1-infrared transparent material; 23-a first metal structure; 24-a second metal structure; 25-a third metal structure; 31-a first substrate; 32-second substrate.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention. In addition, the technical features involved in the embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.
Fig. 1 schematically illustrates a superstructure schematic diagram with simultaneously adjustable temperature and emissivity in the infrared spectrum, according to an embodiment of the disclosure. The above and below positional relationships are illustrated for convenience in description with reference to the drawings, and do not limit the positions thereof, and the relative positions of the layers may be set as described above during the design, manufacture or use.
Referring to fig. 1 and 2, a superstructure of embodiment 1 of the present invention, in which temperature and emissivity in the infrared spectrum are simultaneously adjustable, comprises a thermochromic thin film and a thermoelectric structure. The thermochromic film is an FP resonant cavity, the uppermost layer of the FP resonant cavity is a thermotropic phase-change material structure 21, and a dielectric material structure 22, a first metal structure 23, a first substrate 31 and a second metal structure 24 are arranged below the FP resonant cavity in sequence.
The thermochromic thin film may be provided in a structure as shown in fig. 3, including an infrared transparent material 22-1 doped with thermotropic phase change material particles 21-1, and the thermotropic phase change material particles 21-1 may be VO, in addition to the layered structure as shown in fig. 1 2 A particle coating, under which a first metal structure 23, a first substrate 31 and a second metal structure 24 are arranged in sequence; the thermochromic film is an infrared transparent material doped with thermochromic material particles. The phase transition temperature can be controlled by controlling the type and amount of the particles of the thermotropic phase change material added.
The thermoelectric structure includes a third metal structure 25, P-type and N-type semiconductor dies 11 and 12 connecting the second and third metal structures 24 and 25, and a second substrate 32. The second metal structure 24, the P-type semiconductor crystal grain 11, the N-type semiconductor crystal grain 12 and the third metal structure 25 form a complete circuit of the thermoelectric structure, wherein optionally the second metal structure 24 or the third metal structure 25 is connected with an external circuit, and current for regulating the thermoelectric structure is introduced.
The manufacturing of the thermochromic film can be completed by adopting a magnetron sputtering process, the manufacturing of the thermoelectric structure is completed by adopting a refrigerating sheet processing process, and finally the two are bonded together by the heat-conducting glue, so that the whole superstructure is completely manufactured.
In embodiment 1, by changing the above current value, the temperatures of the superstructure and the FP resonator can be controlled due to the thermoelectric effect of the P-type semiconductor crystal grain 11 and the N-type semiconductor crystal grain 12. When the temperature of the FP resonant cavity changes, the infrared absorption rate of the FP resonant cavity changes, so that the control of the superstructure emissivity is realized. In infrared atmospheric windowOral wave band lambda min ,λ max ]In the range, when the FP resonant cavity is at a high temperature, the thermotropic phase change material structure 21 in embodiment 1 is in a metal state, and the superstructure is in an infrared high emission state; when the FP resonant cavity is at a low temperature, the thermotropic phase change material structure 21 is in an insulation state, and the superstructure is in an infrared low emission state, so that positive correlation regulation and control of the superstructure emissivity and the temperature are realized.
In example 2, by changing the above current values, the superstructure and VO can be controlled due to the thermoelectric effect of the P-type semiconductor crystal grains 11 and the N-type semiconductor crystal grains 12 2 The temperature of the particle coating. When VO is present 2 VO when the temperature of the particle coating changes 2 The infrared absorptivity of the particle coating is changed, so that the control of the superstructure emissivity is realized. In the infrared atmospheric window band lambda min ,λ max ]In the range of VO 2 When the particle coating is at a high temperature, that is, the thermotropic phase change material particles 21-1 in embodiment 2 are in a metal state, and the superstructure is in an infrared high emission state; VO (vacuum vapor volume) 2 When the particle coating is at low temperature, namely the thermally induced phase change material particles 21-1 are in an insulation state, and the superstructure is in an infrared low emission state, so that positive correlation regulation and control of the superstructure emissivity and the temperature are realized.
The method for designing the superstructure with simultaneously adjustable temperature and infrared spectral band emissivity comprises the following steps:
s1, selecting materials of a thermoelectric structure and a thermochromic thin film;
in example 1: the thermotropic phase-change material structure 21 may be a VO material 2 GST alloy, which is in an insulating state and a metal state before and after a phase transition temperature, respectively, and can regulate and control the phase transition temperature of the thermotropic phase transition material structure 21 by doping substances such as W; dielectric material structure 22 in the wavelength band lambda min ,λ max ]Is an infrared transparent material, such as Ge, znS, al 2 O 3 Etc.; the first metal structure 23 is made of an infrared band high-reflection material, such as Au, ag, al, cu, etc.; the second metal structure 24 and the third metal structure 25 are preferably made of a material with good conductivity, such as copper; the first substrate 31 and the second substrate 32 are preferably made of a material having good thermal conductivity, such as a ceramic substrate, rogers TC350 TM Plus laminates and the like; p-type semiThe conductor crystal grain 11 and the N-type semiconductor crystal grain 12 have excellent thermoelectric properties, and are preferably made of a material having a Seebeck coefficient of more than 200uV/K, such as Bi 2 Te 3 And the like.
In example 2: the material of the thermotropic phase change material particles 21-1 of the thermotropic color change film can be VO 2 GST alloy, etc., the infrared transparent material 22-1 is Ge, znS, al 2 O 3 Etc.; the materials of other structures are the same as those of embodiment 1, and are not described again.
S2, optimizing geometric parameters and arrangement modes of the superstructure to enable the difference between high emissivity and low emissivity to be larger than or equal to 0.2 at high temperature and low temperature;
in embodiment 1, the geometrical parameters of the superstructure are optimized such that the surface of the thermotropic phase-change material structure 21 in the metal state and the insulation state is in a high-emission state and a low-emission state, respectively.
The geometrical parameters of the superstructure to be optimized mainly include: the thickness of the thermotropic phase change material structure 21, the thickness of the dielectric material structure 22, the thickness of the first metal structure 23, the thickness of the first substrate 31, the shape and geometric parameters of the second metal structure 24, the geometric parameters and arrangement of the semiconductor crystal grains, the shape and geometric parameters of the third metal structure 25, and the thickness of the second substrate 32. The COMSOL can be used for calculating the emissivity of the FP resonant cavity if the calculated superstructure is in an infrared band lambda min ,λ max ]Within the range, when the thermotropic phase change material structure is in a metal state and an insulation state, the surfaces of the infrared spectrum sections of the superstructure are respectively in a high emission state and a low emission state; during actual design, the difference value between the high emissivity and the low emissivity is greater than or equal to 0.2, namely the design requirement is met, the geometric parameters of the superstructure meet the design requirement, and the whole superstructure can realize the function of regulating and controlling the infrared emissivity.
In example 2, the thickness of the infrared transparent material 22-1, the particle size and the doping ratio of the thermotropic phase change material particles 21-1 need to be optimized, and other geometric parameters and arrangement are the same as those in example 1.
If the calculated superstructure is in the infrared band [ lambda ] min ,λ max ]In the range of thermotropic phase change material structure in metalUnder the state and the insulation state, the surface of the superstructure infrared spectrum section is respectively in a high-emission state and a low-emission state; during actual design, the difference value between the high emissivity and the low emissivity is greater than or equal to 0.2, namely the design requirement is met, the geometric parameters of the superstructure meet the design requirement, and the whole superstructure can realize the function of regulating and controlling the infrared emissivity.
The spectral emissivity can be evaluated as follows:
step one, knowing the relation between the emissivity and the absorptivity of an object according to kirchhoff's law:
α λ ＝ε λ (1)
in the formula (1), α λ And ε λ The absorption rate and the emissivity are respectively, and lambda is the wavelength, so that the absorption rate of the object can be obtained as long as the emissivity of the object is calculated; and kirchhoff's law holds for any wavelength.
Step two, [ lambda ] min ,λ max ]The average emissivity over the wavelength range is:
in the formula (2) I BB Is Planck black body radiation intensity, c 0 ＝3×10 8 m/s is the speed of light in vacuum, h =6.63 × 10 -34 J · s is planck constant, k =1.38 × 10 -23 J·K -1 Boltzmann constant, T is temperature.
Calculating object [ lambda ] by formula (3) min ,λ max ]Average emissivity over a range of wavelengths.
It is noted that the above description is only for the convenience of the skilled person, and the specific geometrical parameters and materials of the superstructure will be given later, and the specific geometrical parameters, shapes and material choices of the superstructure are not limited herein. In principle, it is only necessary to design the above-mentioned methodThe superstructure is in infrared band [ lambda ] min ,λ max ]When the thermochromic thin film is respectively at high temperature and low temperature in the range, the thermochromic material structure 21 is respectively in a metal state and an insulation state, the superstructure is respectively in a high-emission state and a low-emission state in an infrared spectrum section at the moment, the difference value between the high-emission rate and the low-emission rate is more than or equal to 0.2, the surface emission rate can be regulated and controlled through the temperature, and the geometric parameters and material selection of the superstructure meet the design and use requirements.
Example (a):
fig. 1 shows a schematic diagram of the superstructure in this embodiment.
In this embodiment 1, the superstructure with adjustable temperature and emissivity in the infrared spectrum simultaneously is obtained by the above design method. The thermotropic phase change material structure 21, the dielectric material structure 22 and the first metal structure 23 are all isotropic thin films, and the thermotropic phase change material structure 21 is made of W x V 1-x O 2 The doping proportion of W atoms is 1.5at%, and the thickness is 50nm; the dielectric material structure 22 is Ge with a thickness of 490nm; the first metal structure 23 is made of Ag and has a thickness of 100nm. The material of the first substrate 31 and the second substrate 32 is selected as a ceramic substrate, and the thickness is 1mm; the semiconductor crystal grain material is selected to be Bi 2 Te 3 The side length of the cross section of the superstructure is 1.0mm, the height of the cross section is 3.0mm, and the edge of the crystal grain is parallel to the edge of the superstructure; the electrodes at both ends of the semiconductor die, i.e. the second 24 and third 25 metal structures, are selected from copper, which has a cross-sectional width greater than 0.1mm compared to the semiconductor die, thus ensuring a good connection with the semiconductor die. The second metal structure 24 and the third metal structure 25 are both 0.1mm thick, 1.2mm wide and 3.1mm long, and are arranged in the same manner as the semiconductor crystal grains.
In fig. 3, example 2, the thermochromic thin film is an infrared transparent material 22-1 doped with thermotropic phase change material particles 21-1; the infrared transparent material 22-1 is specifically infrared nondestructive resin; the thermotropic phase change material particle 21-1 is VO 2 A particle; the particle size of the particles is 100nm-200nm; the VO2 doping proportion is 30-50 wt%; the thickness of the thermochromic film is 10-30 μm;
fig. 4 is a simulation result of the emissivity in the infrared spectrum band of the superstructure in this embodiment 1.
Referring to FIG. 4, the superstructure is designed for selected infrared radiation bands, i.e., commonly used infrared detection bands [8um,14um]In W x V 1-x O 2 When the thermotropic phase change material structure 21 is in a metal state, the average emissivity of the superstructure is 0.74; when the thermotropic phase change material structure 21 is in an insulation state, the average emissivity of the superstructure is 0.17, the regulation and control range of the average emissivity is 0.57, and the whole superstructure can realize dynamic regulation and control of the emissivity of an infrared spectrum band. At this time, the geometric parameters of the designed superstructure meet the design requirements.
FIG. 5 is a graph of the emissivity of the super-surface structure as a function of temperature in this example.
Referring to FIG. 5, for the selected infrared spectrum, i.e. the commonly used infrared detection band [8um,14um]And the emissivity of the designed superstructure corresponding to different temperatures is increased and decreased in temperature. Due to W x V 1-x O 2 The phase change degree of the thermotropic phase change material is positively correlated with the temperature, so when the temperature is lower, W is x V 1-x O 2 The thermotropic phase change material is kept in an insulating state, and the surface average emissivity is low (0.17); when the temperature reached the phase transition temperature (38 ℃ C.), W was further raised in temperature x V 1-x O 2 The material is subjected to phase change, the volume fraction of a metal state is increased, and the superstructure emissivity is increased; when W x V 1-x O 2 When the thermotropic phase change material is completely changed from an insulating state to a metal state, the average emissivity of the superstructure reaches the maximum (0.74). W is a group of x V 1-x O 2 The material has a hysteresis effect during phase change, so that the emissivity of the device also has a hysteresis phenomenon in the processes of temperature rise and temperature drop. The calculation result proves that the superstructure designed by the embodiment has a good surface emissivity adjusting function, and further effectively realizes the dynamic tuning of the infrared radiation characteristic.
Fig. 6 is a surface average temperature change curve of the superstructure in this embodiment.
In simulation calculation, the heat exchange coefficient of the upper surface of the superstructure is set to be 15W/(m) 2 K), the upper surface initial temperature was set to 25 ℃. Referring to fig. 6, the temperature of the superstructure surface in the present embodiment may be controlled byThe applied current is effectively regulated. When the current direction is changed, the superstructure can be switched between a heating working mode and a cooling working mode. In the heating operation mode, the surface temperature of the top layer is continuously increased along with the increase of the loading current, which is shown as the negative part of the current in the figure 6; in the cooling working mode, the surface temperature of the top layer is firstly reduced and then increased along with the increase of the loading current, which is mainly because the ohm resistance in the superstructure is heated and increased along with the further increase of the loading current, so that the surface temperature is increased. The calculation result proves that the superstructure designed by the embodiment has a good surface temperature adjusting function, and further, the dynamic tuning of the infrared radiation characteristic is effectively realized.
Fig. 7 is a graph showing the variation of the radiation exitance with temperature according to the present embodiment.
Referring to FIG. 7, for this example and for a fixed emissivity material (calculated herein using the lowest and highest emissivity of this example), at temperature, [8um,14um]Internal radiation emittance. The radiation emittance (W.m) of the material with fixed emissivity changes with temperature -2 ) There is a smaller regulatory range. The radiation emittance for high emissivity materials may be from 332W m -2 Regulating to 460 W.m -2 The radiation still has higher radiation emittance at low temperature; and the radiant exitance can be from 85 W.m for low emissivity materials -2 Regulating to 118 W.m -2 Still, there is a lower radiation emittance at high temperatures. The embodiment combines the positive correlation regulation and control of temperature and emissivity, has lower average emissivity (0.17) at low temperature, and has very low radiation emittance at the time; and a higher average emissivity (0.74) at high temperatures, where there is a higher degree of radiation extraction, the total degree of radiation extraction may be from 85 W.m -2 Regulating to 460 W.m -2 . Therefore, the metamaterial with the temperature and emissivity regulated and controlled in the positive correlation mode can improve the heat radiation regulation and control range.
Although the illustrative embodiments of the present invention have been described in order to facilitate those skilled in the art to understand the invention, it is to be understood that the invention is not limited in scope to the specific embodiments, but rather, it will be apparent to those skilled in the art that various changes may be made without departing from the spirit and scope of the invention as defined and defined in the appended claims, and it is intended that all matter contained in the invention and created by the inventive concept be protected.
Claims (12)
1. A superstructure with simultaneously adjustable temperature and emissivity in the infrared region, comprising:
pyroelectric structures and thermochromic thin films;
the thermoelectric structure realizes the regulation and control of the temperature of the superstructure through the semiconductor thermoelectric effect;
the thermochromic thin film can be subjected to phase change in the process of temperature change of the superstructure.
2. The superstructure capable of adjusting temperature and emissivity in the infrared spectrum simultaneously according to claim 1, wherein the thermochromic thin film is a FP resonator comprising:
the thermotropic phase change material structure (21) is provided with a medium material structure (22), a first metal structure (23), a first substrate (31) and a second metal structure (24) below in sequence.
3. The superstructure capable of adjusting temperature and emissivity simultaneously in the infrared spectrum and according to claim 1, wherein the thermochromic thin film comprises:
the coating of the thermotropic phase change material particles (21-1) is provided with a first metal structure (23), a first substrate (31) and a second metal structure (24) below the thermotropic phase change material particles in sequence.
4. The superstructure according to claim 2 or 3, wherein the temperature and emissivity is adjustable simultaneously, and the superstructure is characterized in that:
in the infrared band [ lambda ] min ,λ max ]Within the range, when the thermotropic phase change material is in a metal state and an insulation state respectively, the superstructure is in a high-emission state and a low-emission state respectively, and the difference value between the high-emission rate and the low-emission rate is larger than or equal to 0.2.
5. A superstructure adjustable in temperature and emissivity in the infrared spectrum simultaneously according to claim 2, wherein:
the thermotropic phase change material structure (21) is made of VO 2 Or a GST alloy; the dielectric material structure (22) is made of an infrared transparent material, the first metal structure (23) is made of an infrared band high-reflection material, the thickness of the first metal structure is 30-100 nm, the second metal structure (24) is a conductor, and the first substrate (31) is made of a high-thermal-conductivity material.
6. A superstructure adjustable in temperature and emissivity in the infrared spectrum simultaneously according to claim 3, wherein:
the thermotropic phase change material particles (21-1) are VO 2 Particles, the substrate material is infrared transparent material (22-1); the first metal structure (23) is made of an infrared band high-reflection material, the second metal structure (24) is a conductor, and the first substrate (31) is made of a high-thermal-conductivity material.
7. A superstructure according to claim 6, with adjustable temperature and emissivity in the infrared spectrum, characterized in that:
the infrared transparent material (22-1) is infrared nondestructive resin; the first metal structure (23) is Ag or Al or Au or Cu; the second metal structure (24) is Cu, and the first substrate (31) is a ceramic substrate or Rogers TC350 TM Plus laminates.
8. The superstructure for simultaneous temperature and emissivity in the infrared spectrum, according to claim 1, wherein said thermoelectric structure comprises:
a third metal structure (25), a P-type semiconductor crystal grain (11) and an N-type semiconductor crystal grain (12) which connect the thermochromic thin film and the third metal structure (25), and a second substrate (32);
the second metal structure (24) of the thermochromic thin film, the P-type semiconductor crystal grain (11), the N-type semiconductor crystal grain (12) and the third metal structure (25) form a complete circuit of the thermoelectric structure, wherein the second metal structure (24) or the third metal structure (25) is optionally connected with an external circuit, and current for regulating and controlling the thermoelectric structure is introduced.
9. The superstructure with simultaneously adjustable temperature and emissivity in the infrared spectrum according to claim 8, wherein:
the third metal structure (25) is a conductor, the second substrate (32) is a high-thermal-conductivity material, and the P-type semiconductor crystal grains (11) and the N-type semiconductor crystal grains (12) are made of materials with Seebeck coefficients larger than 200 uV/K.
10. The superstructure according to claim 8, with adjustable temperature and emissivity in the infrared spectrum, characterized in that:
the third metal structure (25) is Cu; the second substrate (32) is a ceramic substrate or Rogers TC350 TM A Plus laminate; the P-type semiconductor crystal grain (11) and the N-type semiconductor crystal grain (12) are Bi 2 Te 3 。
11. The superstructure with simultaneously adjustable temperature and emissivity in the infrared spectrum according to claim 8, wherein:
the thermochromism film is manufactured by adopting a magnetron sputtering process, the thermoelectric structure is manufactured by adopting a refrigerating sheet processing process, and the thermoelectric structure and the refrigerating sheet are bonded together by adopting heat-conducting glue.
12. Method for designing a superstructure with adjustable temperature and emissivity in the infrared spectrum simultaneously according to any of claims 1-11, comprising the steps of:
s1, selecting materials of a thermoelectric structure and a thermochromic thin film;
s2, optimizing geometrical parameters and arrangement mode of the superstructure, so that the difference between high emissivity and low emissivity is larger than or equal to 0.2 at high temperature and low temperature.
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