CN114047566A - Super-structure surface based on photoresist material - Google Patents

Super-structure surface based on photoresist material Download PDF

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Publication number
CN114047566A
CN114047566A CN202111465417.1A CN202111465417A CN114047566A CN 114047566 A CN114047566 A CN 114047566A CN 202111465417 A CN202111465417 A CN 202111465417A CN 114047566 A CN114047566 A CN 114047566A
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photoresist material
super
micro
nano
nano array
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文静
彭嘉
张大伟
吴双宝
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University of Shanghai for Science and Technology
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University of Shanghai for Science and Technology
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    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/002Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of materials engineered to provide properties not available in nature, e.g. metamaterials

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  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

The invention discloses a super-structure surface based on a photoresist material, which is characterized in that the super-structure surface is constructed by adopting the photoresist material, the basic structure of the super-structure surface is a micro-nano array structure, the micro-nano array structure is composed of basic units, and the super-structure surface is formed by periodically extending the basic structure. With conventional TiO2The invention provides a super-structure surface composed of photoresist materials, and experiments prove that a submicron-level structure array with high depth-to-width ratio can be processed on the premise of changing the super-structure surface materials, the effect required by the super-structure surface composed of traditional materials such as Si can be achieved, and the selectivity of the materials is widened.

Description

Super-structure surface based on photoresist material
Technical Field
The invention relates to the field of a super-structure surface material, in particular to a super-structure surface based on a photoresist material.
Background
The super-structure surface can change the reflection and refraction phenomena of incident light at the interface of two media, is an artificially designed sub-wavelength optical element, and can generate an ultrathin plane optical device by adjusting the layout of a unit structure of the super-structure surface in the design. However, several commonly used materials for forming the super-structured surface are made of high-refractive-index dielectric materials such as TiO2, Si or GaN, and the materials are all subject to the disadvantages of complex process, high price, high control requirement and the like during processing.
Therefore, those skilled in the art are dedicated to develop a super-structured surface composed of a non-high refractive index material photoresist, and experiments prove that a sub-micron level structure array with a high depth-to-width ratio can be processed on the premise of changing the super-structured surface material, the effect to be achieved by forming the super-structured surface by using a traditional material such as Si can be achieved, and the selectivity of the material is widened. When the photoresist is used for processing, the method has the advantages of simple operation, low cost, high speed and direct forming without a mask. Therefore, the submicron-scale ultra-structure surface structure based on the photoresist material can expand a wider development space for the application of the future ultra-structure surface.
Disclosure of Invention
In view of the above-mentioned defects of the existing materials, the technical problem to be solved by the present invention is how to design the product structure so that the super-structured surface of the photoresist material can achieve the effect to be achieved by forming the super-structured surface with the traditional materials such as Si.
In order to achieve the purpose, the invention provides a super-structure surface based on a photoresist material, which is characterized in that the super-structure surface is constructed by the photoresist material, the basic structure of the super-structure surface is a micro-nano array structure, the micro-nano array structure is composed of basic units, and the super-structure surface is formed by periodically extending the basic structure.
Further, the length, width and transverse dimension of the micro-nano array structure are less than 1 micron.
Further, the depth-to-width ratio of the micro-nano array structure is larger than 10, so that the regulation and control effect on the wave surface is achieved.
Furthermore, the micro-nano array structure realizes the modulation of the phase by adjusting the rotation direction of the basic unit.
Further, the micro-nano array structure is an array of the basic units, the rotation directions of the basic units are different, the unit distance between adjacent basic units is the size of a sub-wavelength, the phase of the basic units is regulated and controlled by changing the rotation angle, and the basic units with different rotation directions of the loaded phase meet the Nyquist sampling theorem.
Further, the rotation angle of the basic unit satisfies the formula:
Figure BDA0003391210150000011
wherein, (x, y) is the spatial position corresponding to the micro-nano array structure center, f is the focal length, and lambda is the wavelength.
Further, the basic unit is one of a rectangular parallelepiped nano-pillar or an ellipsoidal nano-pillar.
Further, the micro-nano array structure controls the optical path difference of the electromagnetic waves transmitted in the surface of the super structure by adjusting different sizes of the basic units so as to regulate and control the phase.
Further, the basic unit is one of a rectangular parallelepiped nanocolumn, an ellipsoidal nanocolumn, a tetragonal nanocolumn or a cylindrical nanocolumn.
Further, the photoresist material has a two-photon absorption effect.
The super-structure surface based on the photoresist material has the following beneficial effects:
1. the nanostructured surface is usually made of TiO2And high-refractive-index dielectric materials such as Si or GaN and the like are processed, the selection of the materials is limited, and the materials all have the defects of complex process, high price, high control requirement and the like. The choice of the metamaterial surface material is provided with more possibilities based on the metamaterial surface structure of the photoresist material.
2. When the photoresist is selected to process the super-structure surface, the method has the advantages of simple operation, low cost, high speed and direct forming without a mask.
3. The ultrastructure surface of the photoresist material can be processed to form a high aspect ratio micro-nano structure with a basic structure of submicron, and experiments prove that the ultrastructure surface of the processed photoresist material can achieve the effect to be achieved by forming the ultrastructure surface by traditional materials such as Si.
Drawings
FIG. 1 is a schematic representation of a processed sample of a resist material based meta-surface in accordance with a preferred embodiment of the present invention;
FIG. 2 is a schematic diagram of an array of periodically extending basic cells of a photoresist-based meta-structure surface in accordance with a preferred embodiment of the present invention;
FIG. 3 is a schematic diagram of the basic cell rotation of a resist material based meta-surface in accordance with a preferred embodiment of the present invention;
FIG. 4 is a schematic diagram of a basic unit with micro-nano size based on the super-structured surface of the photoresist material according to a preferred embodiment of the present invention;
FIG. 5 is a graph of spot focusing efficiency for a photoresist material based microstructured surface in accordance with a preferred embodiment of the present invention;
FIG. 6 is a graph illustrating experimental results of a focused spot on a meta-structure surface based on photoresist material in accordance with a preferred embodiment of the present invention;
Detailed Description
A preferred embodiment of the present invention will be described below with reference to the accompanying drawings for clarity and understanding of the technical contents thereof. The present invention may be embodied in many different forms of embodiments and the scope of the invention is not limited to the embodiments set forth herein.
A super-structure surface based on a photoresist material is constructed by adopting the photoresist material, the basic structure of the super-structure surface is a micro-nano array structure, as shown in FIG. 4, the basic structure is a submicron micro-nano array structure with a high depth-to-width ratio, the depth-to-width ratio of the basic structure is more than 10, the micro-nano array structure is composed of basic units, and the super-structure surface is formed by periodically extending the basic structure.
As shown in fig. 2, the basic structure is periodically extended according to a certain rule to form a super-structured surface, where the certain rule includes but is not limited to a geometric phase (also called Pancharatnam-Berry phase, PB phase for short), the phase is modulated by adjusting the rotation direction of the basic unit, and when the basic unit is extended according to the geometric phase, the basic unit is one of a rectangular parallelepiped nanocolumn or an ellipsoidal nanocolumn. The certain rule includes but is not limited to a transmission phase, the phase is regulated and controlled by adjusting the optical path difference of the basic unit when the electromagnetic waves are transmitted in the surface of the super structure, and when the basic unit extends according to the transmission phase, the basic unit is one of a cuboid-shaped nano-cylinder, an ellipsoid-shaped nano-cylinder, a cuboid-shaped nano-cylinder or a cylinder-shaped nano-cylinder.
The above designs are all based on photoresist, the photoresist material has two-photon absorption effect, and the kind of the photoresist is not limited. The micro-nano scale 3D printer is used for processing a super-structure surface micro-nano structure by utilizing a two-photon polymerization 3D printing laser direct writing technology, a laser direct writing technology or a three-dimensional laser photoetching technology is adopted, a laser direct writing (DLW) photoetching technology utilizes laser to directly scan and process a material, and a mask or a die is not needed to directly manufacture a complex three-dimensional micro-nano structure. Two-photon polymerization is a photopolymerization process initiated by a substance after two-photon absorption occurs. In general, when a molecule or atom transitions from a ground state to an excited state, only one photon can be absorbed at a time. If the light intensity is high, two-photon transition can be generated, namely two photons can be absorbed at one time, and two-photon polymerization only occurs in a small area near a focus, so that high spatial resolution can be realized.
In this embodiment, taking Pancharatnam-berry (pb) phase-type super-structured surface as an example, the photoresist sub-micron structure array is an array of rectangular parallelepiped nano-pillars with different rotation directions, the rectangular parallelepiped nano-pillars adjust and control the phase by changing the rotation angle and the size thereof, and the period of the rectangular parallelepiped nano-pillar array loaded with the phase satisfies the nyquist sampling theorem. The rotation angle of the cuboid-shaped nano column meets the formula:
Figure BDA0003391210150000031
wherein, (x, y) is a spatial position corresponding to a central O point of the photoresist micro-nano array structure, f is a focal length, λ is a wavelength, and a rotation diagram of the rectangular nano column is shown in fig. 3.
The length (L), width (W) and height (H) of the final processed basic structure of the super-structure surface are respectively 600nm, 200nm and 5000 nm. The cell period P is 980nm, and the aspect ratio of the basic structure is 25. The structure of the processed sample is shown in fig. 1. The focusing efficiency of the super-structure surface is shown in figure 5 and the light spot distribution is shown in figure 6 after simulation and experiment, the peak focusing efficiency is 52%, and when the incident wavelength is 750nm-850nm, the focusing efficiency exceeds 50%. Fig. 6 shows a tightly focused, bright and symmetrical spot at the center of the focal plane. The results prove that the super-structure surface structure of submicron level based on the photoresist material has good optical field focusing performance.
The foregoing detailed description of the preferred embodiments of the invention has been presented. It should be understood that numerous modifications and variations could be devised by those skilled in the art in light of the present teachings without departing from the inventive concepts. Therefore, the technical solutions available to those skilled in the art through logic analysis, reasoning and limited experiments based on the prior art according to the concept of the present invention should be within the scope of protection defined by the claims.

Claims (10)

1. A super-structure surface based on a photoresist material is characterized in that the super-structure surface is constructed by adopting the photoresist material, the basic structure of the super-structure surface is a micro-nano array structure, the micro-nano array structure is composed of basic units, and the super-structure surface is formed by periodically extending the basic structure.
2. The photoresist material-based nanostructured surface of claim 1, wherein the micro-nano array structures have a length, width and lateral dimension of less than 1 micron.
3. The photoresist material-based nanostructured surface of claim 2, wherein the micro-nano array structures have an aspect ratio of greater than 10 to provide wavefront control.
4. The photoresist material-based nanostructured surface of claim 1, wherein the micro-nano array structure effects modulation of phase by adjusting the handedness of the elementary cells.
5. The photoresist material-based nanostructured surface of claim 4, wherein the micro-nano array structure is an array of the basic units, the rotation directions of the basic units are different, the unit distance between adjacent basic units is a sub-wavelength size, the phase of the basic units is adjusted by changing the rotation angle, and the basic units with different rotation directions of the loaded phase satisfy the Nyquist sampling theorem.
6. The photoresist material-based metamorphic surface of claim 5 wherein the rotation angle of the base unit satisfies the equation:
Figure FDA0003391210140000011
wherein, (x, y) is the spatial position corresponding to the micro-nano array structure center, f is the focal length, and lambda is the wavelength.
7. The photoresist material-based nanostructured surface of claim 4 wherein the base unit is one of a cuboid-shaped nano-pillar or an ellipsoid-shaped nano-pillar.
8. The photoresist material-based nanostructured surface according to claim 1, wherein the micro-nano array structure performs phase control by adjusting the different sizes of the basic units to control the optical path difference of electromagnetic waves transmitted in the nanostructured surface.
9. The photoresist material-based surface of claim 8, wherein the base unit is one of a cuboid-shaped nanocolumn, an ellipsoid-shaped nanocolumn, a cuboid-shaped nanocolumn or a cylindrical nanocolumn.
10. The microstructured surface of a photoresist-based material of claim 1, wherein said photoresist material exhibits two-photon absorption.
CN202111465417.1A 2021-12-03 2021-12-03 Super-structure surface based on photoresist material Pending CN114047566A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114966941A (en) * 2022-06-15 2022-08-30 武汉大学苏州研究院 Optical super-structure surface film for realizing precise phase correction

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Publication number Priority date Publication date Assignee Title
CN108983337A (en) * 2018-07-23 2018-12-11 南方科技大学 Super structure surface primary mirror, auxiliary mirror and primary mirror, auxiliary mirror preparation method and optical system
CN109196387A (en) * 2016-04-05 2019-01-11 哈佛学院院长及董事 Super lens for subwavelength resolution imaging
CN110376665A (en) * 2019-07-31 2019-10-25 郝成龙 A kind of super lens and the optical system with it
CN112558419A (en) * 2020-12-18 2021-03-26 中国科学院光电技术研究所 Processing method of large-caliber flexible optical super-structure surface structure
CN112965171A (en) * 2021-02-05 2021-06-15 华南师范大学 Method for manufacturing optical fiber collimator
CN113917574A (en) * 2021-09-30 2022-01-11 深圳迈塔兰斯科技有限公司 Stepped substrate super-surface and related design method, processing method and optical lens

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109196387A (en) * 2016-04-05 2019-01-11 哈佛学院院长及董事 Super lens for subwavelength resolution imaging
CN108983337A (en) * 2018-07-23 2018-12-11 南方科技大学 Super structure surface primary mirror, auxiliary mirror and primary mirror, auxiliary mirror preparation method and optical system
CN110376665A (en) * 2019-07-31 2019-10-25 郝成龙 A kind of super lens and the optical system with it
CN112558419A (en) * 2020-12-18 2021-03-26 中国科学院光电技术研究所 Processing method of large-caliber flexible optical super-structure surface structure
CN112965171A (en) * 2021-02-05 2021-06-15 华南师范大学 Method for manufacturing optical fiber collimator
CN113917574A (en) * 2021-09-30 2022-01-11 深圳迈塔兰斯科技有限公司 Stepped substrate super-surface and related design method, processing method and optical lens

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114966941A (en) * 2022-06-15 2022-08-30 武汉大学苏州研究院 Optical super-structure surface film for realizing precise phase correction

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