CN114047157A - Evaluation processing method and device for laser excitation source - Google Patents
Evaluation processing method and device for laser excitation source Download PDFInfo
- Publication number
- CN114047157A CN114047157A CN202111352890.9A CN202111352890A CN114047157A CN 114047157 A CN114047157 A CN 114047157A CN 202111352890 A CN202111352890 A CN 202111352890A CN 114047157 A CN114047157 A CN 114047157A
- Authority
- CN
- China
- Prior art keywords
- laser
- excitation source
- parameter
- crystal
- laser excitation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005284 excitation Effects 0.000 title claims abstract description 65
- 238000011156 evaluation Methods 0.000 title claims abstract description 9
- 238000003672 processing method Methods 0.000 title claims abstract description 6
- 239000013078 crystal Substances 0.000 claims abstract description 112
- 230000003287 optical effect Effects 0.000 claims abstract description 57
- 238000000034 method Methods 0.000 claims abstract description 26
- 238000012545 processing Methods 0.000 claims description 4
- 230000008569 process Effects 0.000 abstract description 9
- 238000005516 engineering process Methods 0.000 abstract description 7
- 239000000835 fiber Substances 0.000 description 22
- 238000010521 absorption reaction Methods 0.000 description 9
- 239000013307 optical fiber Substances 0.000 description 9
- 238000001328 terahertz time-domain spectroscopy Methods 0.000 description 9
- 230000005855 radiation Effects 0.000 description 5
- 239000006185 dispersion Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 3
- KXNLCSXBJCPWGL-UHFFFAOYSA-N [Ga].[As].[In] Chemical compound [Ga].[As].[In] KXNLCSXBJCPWGL-UHFFFAOYSA-N 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 238000004590 computer program Methods 0.000 description 3
- 238000002310 reflectometry Methods 0.000 description 3
- 238000004088 simulation Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- PCTMTFRHKVHKIS-BMFZQQSSSA-N (1s,3r,4e,6e,8e,10e,12e,14e,16e,18s,19r,20r,21s,25r,27r,30r,31r,33s,35r,37s,38r)-3-[(2r,3s,4s,5s,6r)-4-amino-3,5-dihydroxy-6-methyloxan-2-yl]oxy-19,25,27,30,31,33,35,37-octahydroxy-18,20,21-trimethyl-23-oxo-22,39-dioxabicyclo[33.3.1]nonatriaconta-4,6,8,10 Chemical compound C1C=C2C[C@@H](OS(O)(=O)=O)CC[C@]2(C)[C@@H]2[C@@H]1[C@@H]1CC[C@H]([C@H](C)CCCC(C)C)[C@@]1(C)CC2.O[C@H]1[C@@H](N)[C@H](O)[C@@H](C)O[C@H]1O[C@H]1/C=C/C=C/C=C/C=C/C=C/C=C/C=C/[C@H](C)[C@@H](O)[C@@H](C)[C@H](C)OC(=O)C[C@H](O)C[C@H](O)CC[C@@H](O)[C@H](O)C[C@H](O)C[C@](O)(C[C@H](O)[C@H]2C(O)=O)O[C@H]2C1 PCTMTFRHKVHKIS-BMFZQQSSSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000012854 evaluation process Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
- G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
- G01N21/3581—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light using far infrared light; using Terahertz radiation
- G01N21/3586—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light using far infrared light; using Terahertz radiation by Terahertz time domain spectroscopy [THz-TDS]
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/28—Investigating the spectrum
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
The application discloses an evaluation processing method and device of a laser excitation source, wherein the method comprises the following steps: acquiring a first parameter of laser output when a plurality of PPLN crystals with different thicknesses are respectively used as optical frequency doubling crystals in a laser excitation source; selecting a PPLN crystal with a first thickness as the optical frequency doubling crystal according to a first parameter corresponding to the PPLN crystal with each thickness; acquiring a plurality of groups of position combinations; acquiring a second parameter of the laser output under each group of the plurality of groups of position combinations; selecting one set from the plurality of sets of position combinations as the position of the PPLN crystal and the at least one lens disposed in the laser excitation source according to the second parameter. By the method and the device, the problem that how to process frequency doubling of 780nm laser in the prior art does not disclose related technologies is solved, so that crystals with proper thickness and the set positions can be selected, and the quality of the 780nm laser light source is improved.
Description
Technical Field
The application relates to the field of laser, in particular to an evaluation processing method and device of a laser excitation source.
Background
The radiation source of the terahertz time-domain spectroscopy system is usually obtained by a method of exciting a photoconductive antenna by femtosecond pulse laser, therefore, the femtosecond pulse excitation source is one of the most core components of the terahertz time-domain spectroscopy system, and the radiation source determines the spectral range, the dynamic range and the resolution of the system and is related to the performance, the cost and the industrialization degree of the terahertz time-domain spectroscopy system. At present, two types of radiation sources of a relatively mature terahertz time-domain spectroscopy system at home and abroad are mainly used, one type is generated by exciting a photoconductive antenna by a femtosecond fiber laser with the central wavelength of 1560nm, but indium gallium arsenide (InGaAs) materials adopted by the base of the photoconductive antenna are difficult to grow, only a small number of companies can produce the terahertz time-domain spectroscopy system in batches at present, the price is high, the supply time is long, in addition, the InGaAs damage threshold is low, and the terahertz radiation source is easily damaged in the using process; the other is generated by exciting a photoconductive antenna by a femtosecond laser with the central wavelength of about 780nm, the substrate of the antenna is usually made of gallium arsenide (GaAs) material, and the antenna has stable performance, low cost and high damage-resistant threshold
The inventor finds that the 780nm femtosecond fiber laser is good in stability, high in cost performance, small in size and easy to integrate as an excitation source, but how to process 780nm frequency doubling is not disclosed in the prior art, and the frequency doubling treatment influences the performance of the excitation source.
Disclosure of Invention
The embodiment of the application provides an evaluation processing method and device of a laser excitation source, so as to solve at least the problem that how to process frequency doubling of 780nm laser does not disclose the related technology in the prior art.
According to an aspect of the present application, there is provided a method of evaluating a laser excitation source, including: acquiring a first parameter of laser output when a plurality of PPLN crystals with different thicknesses are respectively used as optical frequency doubling crystals in a laser excitation source; selecting a PPLN crystal with a first thickness as the optical frequency doubling crystal according to a first parameter corresponding to the PPLN crystal with each thickness; acquiring a plurality of sets of position combinations, wherein each set of position combination comprises a first position and a second position, wherein the first position is a position of the PPLN crystal with the first thickness in the laser excitation source, and the second position is a position of at least one lens in the laser excitation source; acquiring a second parameter of the laser output under each group of the plurality of groups of position combinations; selecting one set from the plurality of sets of position combinations as the position of the PPLN crystal and the at least one lens disposed in the laser excitation source according to the second parameter.
Further, the first parameter and the second parameter each include: the amplitude and/or optical power of the frequency doubled optical pulses.
Further, selecting a PPLN crystal of a first thickness as the optical frequency doubling crystal according to the first parameter corresponding to each thickness of the PPLN crystal comprises: and selecting the PPLN crystal corresponding to the maximum frequency doubling optical pulse amplitude as the optical frequency doubling crystal.
Further, selecting one of the plurality of sets of positions as the position at which the PPLN crystal and the at least one lens are disposed in the laser excitation source according to the second parameter comprises: selecting a combination of locations where optical power is greatest as locations where the PPLN crystal and the at least one lens are disposed in the laser excitation source.
Further, the laser used by the laser excitation source is 780nm laser.
According to another aspect of the present application, there is also provided an evaluation processing apparatus of a laser excitation source, including: the first acquisition module is used for acquiring first parameters of output laser when a plurality of PPLN crystals with different thicknesses are respectively used as optical frequency doubling crystals in the laser excitation source; the first selection module is used for selecting the PPLN crystal with the first thickness as the optical frequency doubling crystal according to the first parameter corresponding to the PPLN crystal with each thickness; a second obtaining module, configured to obtain a plurality of sets of position combinations, where each set of position combination includes a first position and a second position, where the first position is a position of the PPLN crystal with the first thickness in the laser excitation source, and the second position is a position of at least one lens in the laser excitation source; a third obtaining module, configured to obtain a second parameter of the laser output under each of the multiple groups of position combinations; a second selection module for selecting one of the sets of position combinations as a set of positions of the PPLN crystal and the at least one lens in the laser excitation source according to the second parameter.
Further, the first parameter and the second parameter each include: the amplitude and/or optical power of the frequency doubled optical pulses.
Further, the first selection module is configured to: and selecting the PPLN crystal corresponding to the maximum frequency doubling optical pulse amplitude as the optical frequency doubling crystal.
Further, the second selection module is configured to: selecting a combination of locations where optical power is greatest as locations where the PPLN crystal and the at least one lens are disposed in the laser excitation source.
Further, the laser used by the laser excitation source is 780nm laser.
In the embodiment of the application, a first parameter of laser output when a plurality of PPLN crystals with different thicknesses are respectively used as optical frequency doubling crystals in a laser excitation source is obtained; selecting a PPLN crystal with a first thickness as the optical frequency doubling crystal according to a first parameter corresponding to the PPLN crystal with each thickness; acquiring a plurality of sets of position combinations, wherein each set of position combination comprises a first position and a second position, wherein the first position is a position of the PPLN crystal with the first thickness in the laser excitation source, and the second position is a position of at least one lens in the laser excitation source; acquiring a second parameter of the laser output under each group of the plurality of groups of position combinations; selecting one set from the plurality of sets of position combinations as the position of the PPLN crystal and the at least one lens disposed in the laser excitation source according to the second parameter. By the method and the device, the problem that how to process frequency doubling of 780nm laser in the prior art does not disclose related technologies is solved, so that crystals with proper thickness and the set positions can be selected, and the quality of the 780nm laser light source is improved.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this application, illustrate embodiments of the application and, together with the description, serve to explain the application and are not intended to limit the application. In the drawings:
fig. 1 is a flow chart of an evaluation process of a laser excitation source according to an embodiment of the present application.
Detailed Description
It should be noted that the embodiments and features of the embodiments in the present application may be combined with each other without conflict. The present application will be described in detail below with reference to the embodiments with reference to the attached drawings.
It should be noted that the steps illustrated in the flowcharts of the figures may be performed in a computer system such as a set of computer-executable instructions and that, although a logical order is illustrated in the flowcharts, in some cases, the steps illustrated or described may be performed in an order different than presented herein.
In the present embodiment, a method for evaluating a laser excitation source is provided, and fig. 1 is a flowchart of evaluating a laser excitation source according to an embodiment of the present application, and as shown in fig. 1, the flowchart includes the following steps:
step S102, acquiring first parameters of output laser when a plurality of PPLN crystals with different thicknesses are respectively used as optical frequency doubling crystals in a laser excitation source; for example, the laser used as the laser excitation source is 780nm laser. The first parameter involved in this step and the second parameter involved in the following steps may both include: the amplitude and/or optical power of the frequency doubled optical pulses.
And step S104, selecting the PPLN crystal with the first thickness as the optical frequency doubling crystal according to the first parameter corresponding to the PPLN crystal with each thickness. The thickness of the crystals can be chosen from 0.5 to 3mm, preferably 2.5 mm.
For example, a PPLN crystal corresponding to a maximum doubled optical pulse amplitude may be selected as the optical frequency doubling crystal.
Step S106, acquiring a plurality of sets of position combinations, wherein each set of position combination includes a first position and a second position, the first position is a position of the PPLN crystal with the first thickness in the laser excitation source, and the second position is a position of at least one lens in the laser excitation source. Step S108, acquiring a second parameter of the laser output under each group of the plurality of groups of position combinations.
Step S110, selecting one group from the plurality of groups of position combinations as the positions of the PPLN crystal and the at least one lens in the laser excitation source according to the second parameter.
For example, a combination of positions where the optical power is the largest may be selected as the positions where the PPLN crystal and the at least one lens are disposed in the laser excitation source.
For example, the lens group, PPLN crystal, lens group is a collimated focusing system composed of a first lens and a second lens; the laser output end is positioned at the focal point of the incident plane of the first lens; the PPLN crystal is arranged in the temperature control system, and the incident end face is positioned at the focal point of the emergent face of the second lens; the focus of the off-axis parabolic reflector is located at the focus of the emergent surface of the second lens, and the central small hole is collinear with the laser output end, the center of the first lens, the center of the second lens and the center of the PPLN crystal.
The steps solve the problem that how to process frequency doubling of 780nm laser in the prior art does not disclose the problems caused by the related technology, so that crystals with proper thickness and arranged positions can be selected, and the quality of a 780nm laser light source is improved.
After step S110, the method may further include: obtaining a plurality of mode locking modes, and testing each mode locking mode by using the thickness of the selected PPLN crystal, the position of the PPLN crystal and the position of the lens to obtain a parameter corresponding to each mode locking mode, wherein the parameter comprises at least one of the following parameters: relaxation time, absorption bandwidth, saturated absorption light intensity, modulation depth, unsaturated absorption loss, nonlinear reflectivity, gain bandwidth of laser working substance, self-phase modulation (SPM) and intracavity group velocity dispersion. And selecting one mode from the multiple mode locking modes according to the parameters.
Optionally, after the mode locking mode is selected, different fiber laser cavity types are tested by using the selected PPLN crystal thickness, mode locking mode, PPLN crystal position, and lens position (or the selected PPLN crystal thickness, PPLN crystal position, and lens position may also be used), so as to obtain the corresponding optical power of each fiber laser cavity type under the same input condition, and the fiber laser cavity type with the largest optical power is selected as the fiber laser cavity type used in the laser excitation source.
Optionally, after the fiber laser cavity type is selected, different fiber laser gain media are tested by using the selected fiber laser cavity type, the PPLN crystal thickness, the mode locking manner, the PPLN crystal position, and the lens position (or the selected fiber laser cavity type, the PPLN crystal thickness, the PPLN crystal position, and the lens position may also be used), so as to obtain the corresponding optical power of each fiber laser gain medium under the same input condition, and the fiber laser gain medium with the largest optical power is selected as the fiber laser gain medium used in the laser excitation source.
In this embodiment, can select SESAM and NALM hybrid mode locking mode, SESAM self-starting is comparatively easy, can make up the unable self-starting defect in the anti-saturation absorption zone of NALM structure, utilizes the fast advantage of NALM response time to obtain narrower pulse simultaneously. The SESAM generally adopts a reflection type structure in a modulation mode of hybrid mode locking, and is easily influenced by parameters such as the SESAM nonlinear reflectivity, the modulation depth, the saturable absorber saturation energy and the like; the NALM uses Sagnac loop structure, and the factors such as the transmittance of the loop mirror and the nonlinear phase difference in the loop are related to the modulation degree of the fiber laser femtosecond pulse, so the fiber femtosecond laser SESAM and NALM hybrid mode locking are adopted in the embodiment.
As an excitation source of a terahertz time-domain spectroscopy system, performance parameters of 780nm hybrid mode-locked femtosecond fiber laser, such as output power, pulse width, repetition frequency, output light stability and the like, are important factors for determining terahertz radiation source and detection performance. The simulation model of 780nm frequency doubling hybrid mode-locked femtosecond laser performance parameters under the condition of the full polarization maintaining optical fiber is established, and the influence of factors such as an optical fiber laser gain medium, optical fiber dispersion characteristics, an optical fiber laser cavity type, PPLN crystal frequency doubling characteristics, an SESAM and NALM hybrid mode-locked structure and material characteristics on output laser performance parameters can be simulated from a theoretical level in the embodiment.
In this embodiment, stable operation of 780nm fully-polarization-maintaining fiber coupled femtosecond laser based on a SESAM and NALM hybrid mode locking mechanism and frequency multiplication of a periodically-polarized lithium niobate (PPLN) crystal is realized, and the device has the advantages of high stability, wide frequency spectrum, high power, narrow pulse width, low cost, miniaturization, easiness in packaging and integration and the like, and can meet the industrial requirements of a terahertz time-domain spectroscopy system.
(1) And considering factors such as relaxation time, absorption bandwidth, saturated absorption light intensity, modulation depth, unsaturated absorption loss, nonlinear reflectivity, gain bandwidth of laser working substances, self-phase modulation (SPM), intra-cavity group velocity dispersion and the like of SESAM and NALM mode locking, and carrying out simulation of SESAM and NALM mixed mode locking.
(2) According to the transmission characteristic of the Gaussian beam, the parameter influence of the characteristic and the thickness of the PPLN frequency doubling crystal on the femtosecond laser of the output optical fiber is evaluated, and a proper lens combination and a proper frequency doubling crystal are selected. For example, the frequency doubling cavity type of the fiber femtosecond laser can be designed through an ABCD transmission matrix, a frequency doubling conversion efficiency formula and the like so as to select a proper lens combination and frequency doubling crystal.
(3) The method utilizes the ultra-short pulse to transmit and evolve in the optical fiber and follow tools such as a nonlinear Schrodinger equation and the like, and simulates the influence of factors such as laser working substances, optical fiber dispersion characteristics, optical fiber laser cavity types, PPLN crystal frequency doubling characteristics, SESAM and NALM hybrid mode locking structures and materials on the performance parameters of output femtosecond lasers, so as to obtain the stable operation condition of 780nm frequency doubling SESAM and NALM hybrid mode locking optical fiber femtosecond lasers.
The experimental scheme is as follows:
(1) in the SESAM and NALM mixed mode-locked fiber femtosecond laser, the damage threshold of the SESAM is low, the SESAM is damaged when the power is too high, and the phenomenon that the SESAM is subjected to Q-switching mode locking can be caused when the power is too low, so that the NALM structure cannot exceed the reverse saturation absorption threshold. Therefore, the shape of the SESAM and the lens group are designed in a modified mode, the optical power density of a unit area is reduced, and the damage threshold of the SESAM is improved; and a half-wave plate is added into the NALM ring mirror cavity, and the delay of half phase period is introduced to improve the saturable absorption threshold of the NALM.
(2) A plurality of PPLN crystals with different thicknesses are respectively selected as optical frequency doubling crystals, and the influence of different PPLN crystals on the pulse width and the optical power of frequency doubling light is analyzed under the same condition by using instruments such as a power meter, an autocorrelator and the like. And determining the positions of optical devices such as crystals, lenses and the like by combining theoretical simulation and considering crystal thermal effect, coating factors and the like so as to obtain the optimal frequency doubling light output parameters.
(3) Due to the influence of the hybrid mode locking structure and the frequency doubling process, the power of output femtosecond laser is reduced, and the excitation condition of a photoconductive antenna in a terahertz time-domain spectroscopy system cannot be met, so that an erbium-doped fiber amplifier is considered to be added into the fiber femtosecond laser, and the output power of the 780nm frequency doubling hybrid mode locking fiber femtosecond laser is improved.
The terahertz time-domain spectroscopy system excitation source realized by the embodiment is based on the principle of hybrid mode locking, and uses a PPLN crystal as a frequency doubling crystal.
In this embodiment, an electronic device is provided, comprising a memory in which a computer program is stored and a processor configured to run the computer program to perform the method in the above embodiments.
The programs described above may be run on a processor or may also be stored in memory (or referred to as computer-readable media), which includes both non-transitory and non-transitory, removable and non-removable media, that implement information storage by any method or technology. The information may be computer readable instructions, data structures, modules of a program, or other data. Examples of computer storage media include, but are not limited to, phase change memory (PRAM), Static Random Access Memory (SRAM), Dynamic Random Access Memory (DRAM), other types of Random Access Memory (RAM), Read Only Memory (ROM), Electrically Erasable Programmable Read Only Memory (EEPROM), flash memory or other memory technology, compact disc read only memory (CD-ROM), Digital Versatile Discs (DVD) or other optical storage, magnetic cassettes, magnetic tape magnetic disk storage or other magnetic storage devices, or any other non-transmission medium that can be used to store information that can be accessed by a computing device. As defined herein, a computer readable medium does not include a transitory computer readable medium such as a modulated data signal and a carrier wave.
These computer programs may also be loaded onto a computer or other programmable data processing apparatus to cause a series of operational steps to be performed on the computer or other programmable apparatus to produce a computer implemented process such that the instructions which execute on the computer or other programmable apparatus provide steps for implementing the functions specified in the flowchart flow or flows and/or block diagram block or blocks, and corresponding steps may be implemented by different modules.
Such an apparatus or system is provided in this embodiment. The device is called an evaluation processing device of a laser excitation source, and comprises: the first acquisition module is used for acquiring first parameters of output laser when a plurality of PPLN crystals with different thicknesses are respectively used as optical frequency doubling crystals in the laser excitation source; the first selection module is used for selecting the PPLN crystal with the first thickness as the optical frequency doubling crystal according to the first parameter corresponding to the PPLN crystal with each thickness; a second obtaining module, configured to obtain a plurality of sets of position combinations, where each set of position combination includes a first position and a second position, where the first position is a position of the PPLN crystal with the first thickness in the laser excitation source, and the second position is a position of at least one lens in the laser excitation source; a third obtaining module, configured to obtain a second parameter of the laser output under each of the multiple groups of position combinations; a second selection module for selecting one of the sets of position combinations as a set of positions of the PPLN crystal and the at least one lens in the laser excitation source according to the second parameter.
The system or the apparatus is used for implementing the functions of the method in the foregoing embodiments, and each module in the system or the apparatus corresponds to each step in the method, which has been described in the method and is not described herein again.
For example, the first parameter and the second parameter each include: the amplitude and/or optical power of the frequency doubled optical pulses. Optionally, the first selection module is configured to: and selecting the PPLN crystal corresponding to the maximum frequency doubling optical pulse amplitude as the optical frequency doubling crystal. Optionally, the second selecting module is configured to: selecting a combination of locations where optical power is greatest as locations where the PPLN crystal and the at least one lens are disposed in the laser excitation source.
For another example, the laser used as the laser excitation source is 780nm laser.
The embodiment solves the problem that how to process frequency doubling of 780nm laser in the prior art does not disclose the related technology, so that crystals with proper thickness and the arranged positions can be selected, and the quality of a 780nm laser light source is improved.
The above are merely examples of the present application and are not intended to limit the present application. Various modifications and changes may occur to those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application should be included in the scope of the claims of the present application.
Claims (10)
1. An evaluation processing method of a laser excitation source, comprising:
acquiring a first parameter of laser output when a plurality of PPLN crystals with different thicknesses are respectively used as optical frequency doubling crystals in a laser excitation source;
selecting a PPLN crystal with a first thickness as the optical frequency doubling crystal according to a first parameter corresponding to the PPLN crystal with each thickness;
acquiring a plurality of sets of position combinations, wherein each set of position combination comprises a first position and a second position, wherein the first position is a position of the PPLN crystal with the first thickness in the laser excitation source, and the second position is a position of at least one lens in the laser excitation source;
acquiring a second parameter of the laser output under each group of the plurality of groups of position combinations;
selecting one set from the plurality of sets of position combinations as the position of the PPLN crystal and the at least one lens disposed in the laser excitation source according to the second parameter.
2. The method of claim 1, wherein the first parameter and the second parameter each comprise: the amplitude and/or optical power of the frequency doubled optical pulses.
3. The method of claim 2, wherein selecting a PPLN crystal of a first thickness as the optical frequency doubling crystal according to the first parameter for each thickness of the PPLN crystal comprises:
and selecting the PPLN crystal corresponding to the maximum frequency doubling optical pulse amplitude as the optical frequency doubling crystal.
4. The method of claim 2, wherein selecting a set of positions from the plurality of sets of position combinations as positions in the laser excitation source for the PPLN crystal and the at least one lens based on the second parameter comprises:
selecting a combination of locations where optical power is greatest as locations where the PPLN crystal and the at least one lens are disposed in the laser excitation source.
5. The method according to any one of claims 1 to 4, wherein the laser used by the laser excitation source is 780nm laser.
6. An evaluation processing device of a laser excitation source, comprising:
the first acquisition module is used for acquiring first parameters of output laser when a plurality of PPLN crystals with different thicknesses are respectively used as optical frequency doubling crystals in the laser excitation source;
the first selection module is used for selecting the PPLN crystal with the first thickness as the optical frequency doubling crystal according to the first parameter corresponding to the PPLN crystal with each thickness;
a second obtaining module, configured to obtain a plurality of sets of position combinations, where each set of position combination includes a first position and a second position, where the first position is a position of the PPLN crystal with the first thickness in the laser excitation source, and the second position is a position of at least one lens in the laser excitation source;
a third obtaining module, configured to obtain a second parameter of the laser output under each of the multiple groups of position combinations;
a second selection module for selecting one of the sets of position combinations as a set of positions of the PPLN crystal and the at least one lens in the laser excitation source according to the second parameter.
7. The apparatus of claim 6, wherein the first parameter and the second parameter each comprise: the amplitude and/or optical power of the frequency doubled optical pulses.
8. The apparatus of claim 7, wherein the first selection module is configured to:
and selecting the PPLN crystal corresponding to the maximum frequency doubling optical pulse amplitude as the optical frequency doubling crystal.
9. The apparatus of claim 7, wherein the second selection module is configured to:
selecting a combination of locations where optical power is greatest as locations where the PPLN crystal and the at least one lens are disposed in the laser excitation source.
10. The apparatus according to any one of claims 6 to 9, wherein the laser used by the laser excitation source is 780nm laser.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111352890.9A CN114047157A (en) | 2021-11-16 | 2021-11-16 | Evaluation processing method and device for laser excitation source |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111352890.9A CN114047157A (en) | 2021-11-16 | 2021-11-16 | Evaluation processing method and device for laser excitation source |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN114047157A true CN114047157A (en) | 2022-02-15 |
Family
ID=80209351
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111352890.9A Pending CN114047157A (en) | 2021-11-16 | 2021-11-16 | Evaluation processing method and device for laser excitation source |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114047157A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000173124A (en) * | 1998-12-08 | 2000-06-23 | Olympus Optical Co Ltd | Magneto-optical disk device |
| CN1464598A (en) * | 2002-06-25 | 2003-12-31 | 中国科学院物理研究所 | High-power semiconductor laser frequency converter |
| CN107104361A (en) * | 2017-06-19 | 2017-08-29 | 中科和光（天津）应用激光技术研究所有限公司 | A kind of miniaturization blue laser of semiconductor laser direct frequency doubling |
-
2021
- 2021-11-16 CN CN202111352890.9A patent/CN114047157A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000173124A (en) * | 1998-12-08 | 2000-06-23 | Olympus Optical Co Ltd | Magneto-optical disk device |
| CN1464598A (en) * | 2002-06-25 | 2003-12-31 | 中国科学院物理研究所 | High-power semiconductor laser frequency converter |
| CN107104361A (en) * | 2017-06-19 | 2017-08-29 | 中科和光（天津）应用激光技术研究所有限公司 | A kind of miniaturization blue laser of semiconductor laser direct frequency doubling |
Non-Patent Citations (1)
| Title |
|---|
| 吴嘉瑞 等: "基于准相位匹配的掺铒飞秒光纤激光器倍频特性研究", 中国激光, no. 2018, 31 July 2018 (2018-07-31), pages 1 - 7 * |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Dubietis et al. | Ultrafast supercontinuum generation in bulk condensed media (Invited Review) | |
| Demaria et al. | Picosecond laser pulses | |
| Soures et al. | High power Nd: glass laser for fusion applications | |
| CN103427320B (en) | The tunable Totally positive dispersion femto second optical fiber laser of a kind of near-infrared wavelength | |
| Zhao et al. | Femtosecond pulse propagation in optical fibers: higher order effects | |
| US4268801A (en) | Mode-locked laser using a saturable absorber in a cavity | |
| Touil et al. | Spectral correlations in a fiber-optical parametric oscillator | |
| CN114047157A (en) | Evaluation processing method and device for laser excitation source | |
| Kudryashov et al. | Laser resonators: novel design and development | |
| Massey et al. | Wavelength-tunable optical mixing experiments between 208 nm and 259 nm | |
| CN112636146B (en) | High-power mode-locked disc laser | |
| Gorobets et al. | Studies of nonlinear optical characteristics of IR crystals for frequency conversion of TEA-CO2 laser radiation | |
| Hanna et al. | Tunable medium infrared generation in silver thiogallate (AgGaS 2) by down-conversion of flash-pumped dye-laser radiation | |
| CN104659648A (en) | Neodymium-doped langasite self-frequency-doubling ultra-short pulse laser | |
| US3624544A (en) | Self mode-locking of lasers using dyes | |
| US3636474A (en) | Ultrashort optical pulse generation utilizing laserpumped lasers | |
| Van den Heuvel et al. | Experimental and numerical study of stimulated Raman scattering in an astigmatic focus | |
| Agnesi | Kerr-lens modelocking of solid-state lasers and unidirectional ring cavities | |
| CN219917893U (en) | Solid laser with bias selection function | |
| CN110190501B (en) | Active Q-switching method based on volume Bragg grating | |
| Guo | Research on high frequency and high reliability laser technology | |
| Zhang et al. | Theoretical and experimental study of single mode-locking pulse generation with low repetition rate in a dual-loss-modulated QML YVO 4/Nd: YVO 4 laser with EO and GaAs | |
| He et al. | Phase-conjugation property of one-photon pumped backward stimulated emission from a lasing medium | |
| Jewell | Fabrication, Investigation and Optimization of Gallium-arsenide Optical Bistable Devices and Logic Gates | |
| CN105633785A (en) | Light-path system for mode-locked ultraviolet laser |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |