CN114038923A - 一种薄膜铌酸锂光波导与InP基光电探测器异质集成结构 - Google Patents
一种薄膜铌酸锂光波导与InP基光电探测器异质集成结构 Download PDFInfo
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Abstract
本发明公开了一种薄膜铌酸锂光波导与InP基光电探测器异质集成结构，该结构主要包括InP基光电探测器外延层、耦合层、薄膜铌酸锂光波导、缓冲层和衬底；InP基光电探测器外延层通过耦合层集成于薄膜铌酸锂光波导正上方，缓冲层和衬底依次分布于薄膜铌酸锂光波导下方；沿薄膜铌酸锂光波导传输至InP基光电探测器的光信号通过倏逝波耦合机制，从薄膜铌酸锂光波导透过耦合层先耦合进入其正上方的InP基锥形过渡区，再进入InP基光电探测器外延层，实现薄膜铌酸锂光波导与InP基光电探测器外延层片上异质集成，满足薄膜铌酸锂光芯片和InP基光电探测器芯片的低损耗异质集成需求。
Description
技术领域
本发明属于光电集成芯片领域，特别是一种薄膜铌酸锂光波导与InP基光电探测器异质集成结构。
背景技术
薄膜铌酸锂光波导具有卓越的电光调控特性和低损耗优势，在高速电光调控器件和低损耗无源光器件领域均具有广泛的应用前景。但是，薄膜铌酸锂材料暂不能做光电探测器，这是该材料目前的一个技术短板。因此，需要一种薄膜铌酸锂光波导与InP基光电探测器异质集成结构，实现InP基光电探测器与薄膜铌酸锂光波导的片上集成，补齐薄膜铌酸锂集成光子平台的光探测短板。
发明内容
本发明的目的在于提供一种薄膜铌酸锂光波导与InP基光电探测器异质集成结构，补齐薄膜铌酸锂集成光子平台的光探测短板。
实现本发明目的的技术方案为：一种薄膜铌酸锂光波导与InP基光电探测器异质集成结构，该结构主要由衬底、缓冲层、薄膜铌酸锂光波导、耦合层、InP基光电探测器外延层、P电极和N电极构成；
所述InP基光电探测器外延层通过耦合层集成于薄膜铌酸锂光波导正上方，缓冲层和衬底依次分布于薄膜铌酸锂光波导下方；
所述InP基光电探测器外延层由P型掺杂层、光吸收层、N型掺杂层、N型掺杂锥形过渡区构成；
所述P电极位于P型掺杂层上表面，N电极位于N型掺杂层上表面；
沿薄膜铌酸锂光波导传输至InP基光电探测器外延层的光信号通过倏逝波耦合机制，从薄膜铌酸锂光波导透过耦合层先耦合进入其正上方的N型掺杂锥形过渡区，再经N型掺杂层进入光吸收层，在P型掺杂层、N型掺杂层之间产生光电流，并由P电极、N电极输出。
进一步的，所述P电极为整面电极，由薄膜铌酸锂光波导耦合进入InP基光电探测器外延层的光吸收层的光在P电极的下表面形成反射，再次进入光吸收区，形成二次光吸收。
进一步的，所述N型掺杂锥形过渡区临近N型掺杂层区域为锥形宽区域，远离N型掺杂层区域为锥形顶端。
进一步的，所述薄膜铌酸锂光波导为脊型光波导，薄膜铌酸锂光波导两侧含有一定厚度的薄膜铌酸锂平板层。
进一步的，所述薄膜铌酸锂光波导为矩形光波导。
进一步的，所述耦合层为二氧化硅、氮化硅、氧化铝或聚合物。
进一步的，所述衬底为硅、铌酸锂、碳化硅、蓝宝石或氮化铝。
进一步的，所述缓冲层为二氧化硅、氮化硅、氧化铝或聚合物。
相比现有技术，本发明具有以下有益效果：本发明提供了一种薄膜铌酸锂光波导与InP基光电探测器异质集成结构，将InP基光电探测器芯片外延层薄膜与薄膜铌酸锂光波导通过倏逝波机制实现片上光子异质集成，解决了薄膜铌酸锂集成光路的片上光探测问题。
附图说明
图1为本发明一种薄膜铌酸锂光波导与InP基光电探测器异质集成结构的侧视示意图。
图中各标号的含义为：1、衬底；2、缓冲层；3、薄膜铌酸锂光波导；4、耦合层；5、InP基光电探测器外延层；5-1、N型掺杂锥形过渡区；5-2、N型掺杂层；5-3、光吸收层；5-4、P型掺杂层；6、P电极；7、N电极。
具体实施方式
为进一步了解本发明的内容，结合附图对本发明作详细描述。
如图1所示，本发明的一种薄膜铌酸锂光波导与InP基光电探测器异质集成结构，包括衬底1、缓冲层2、薄膜铌酸锂光波导3、耦合层4、InP基光电探测器外延层5、P电极6和N电极7；所述衬底1、缓冲层2、薄膜铌酸锂光波导3、耦合层4、InP基光电探测器外延层5由下而上依次设置。
所述InP基光电探测器外延层5由P型掺杂层5-4、光吸收层5-3、N型掺杂层5-2、N型掺杂锥形过渡区5-1构成；P型掺杂层5-4、光吸收层5-3、N型掺杂层5-2自下而上依次设置，N型掺杂锥形过渡区5-1与N型掺杂层5-2均位于耦合层4顶部。P电极位于P型掺杂层5-4上表面，N电极7位于N型掺杂层5-2上表面；InP基光电探测器外延层5通过耦合层4集成于薄膜铌酸锂光波导3正上方，缓冲层2和衬底1依次分布于薄膜铌酸锂光波导3下方；沿薄膜铌酸锂光波导3传输至InP基光电探测器外延层5的光信号通过倏逝波耦合机制，从薄膜铌酸锂光波导3透过耦合层4先耦合进入其正上方的N型掺杂锥形过渡区5-1，再经N型掺杂层5-2进入光吸收层5-3，在P型掺杂层5-4、N型掺杂层5-2之间产生光电流，并由P电极6、N电极7输出。
所述P电极6为整面电极，由薄膜铌酸锂光波导3耦合进入InP基光电探测器外延层5的光吸收区5-3的光会在P电极6的下表面形成反射，再次进入光吸收区5-3，形成二次光吸收，增大光电探测器响应度。
所述N型掺杂锥形过渡区5-1，临近N型掺杂层5-2区域为锥形宽区域，远离N型掺杂层5-2区域为锥形顶端。
所述薄膜铌酸锂光波导3包含脊型光波导、矩形光波导，当为脊型光波导结构时，薄膜铌酸锂光波导3两侧含有一定厚度的薄膜铌酸锂平板层；当为矩形光波导结构时，薄膜铌酸锂光波导3两侧没有薄膜铌酸锂平板层。
所述耦合层4为二氧化硅、氮化硅、氧化铝或聚合物；所述衬底1为硅、铌酸锂、碳化硅、蓝宝石或氮化铝；所述缓冲层2为二氧化硅、氮化硅、氧化铝或聚合物。
本发明提供了一种薄膜铌酸锂光波导与InP基光电探测器异质集成结构，将InP基光电探测器芯片外延层薄膜与薄膜铌酸锂光波导通过倏逝波机制实现片上光子异质集成，解决了薄膜铌酸锂集成光路的片上光探测问题。
Claims (8)
1.一种薄膜铌酸锂光波导与InP基光电探测器异质集成结构，其特征在于，该结构主要由衬底(1)、缓冲层(2)、薄膜铌酸锂光波导(3)、耦合层(4)、InP基光电探测器外延层(5)、P电极(6)和N电极(7)构成；
所述InP基光电探测器外延层(5)通过耦合层(4)集成于薄膜铌酸锂光波导(3)正上方，缓冲层(2)和衬底(1)依次分布于薄膜铌酸锂光波导(3)下方；
所述InP基光电探测器外延层(5)由P型掺杂层(5-4)、光吸收层(5-3)、N型掺杂层(5-2)、N型掺杂锥形过渡区(5-1)构成；
所述P电极(6)位于P型掺杂层(5-4)上表面，N电极(7)位于N型掺杂层(5-2)上表面；
沿薄膜铌酸锂光波导(3)传输至InP基光电探测器外延层(5)的光信号通过倏逝波耦合机制，从薄膜铌酸锂光波导(3)透过耦合层(4)先耦合进入其正上方的N型掺杂锥形过渡区(5-1)，再经N型掺杂层(5-2)进入光吸收层(5-3)，在P型掺杂层(5-4)、N型掺杂层(5-2)之间产生光电流，并由P电极(6)、N电极(7)输出。
2.根据权利要求1所述的薄膜铌酸锂光波导与InP基光电探测器异质集成结构，其特征在于，所述P电极(6)为整面电极，由薄膜铌酸锂光波导(3)耦合进入InP基光电探测器外延层(5)的光吸收层(5-3)的光在P电极(6)的下表面形成反射，再次进入光吸收区，形成二次光吸收。
3.根据权利要求1所述的薄膜铌酸锂光波导与InP基光电探测器异质集成结构，其特征在于，所述N型掺杂锥形过渡区(5-1)临近N型掺杂层(5-2)区域为锥形宽区域，远离N型掺杂层(5-2)区域为锥形顶端。
4.根据权利要求1所述的薄膜铌酸锂光波导与InP基光电探测器异质集成结构，其特征在于，所述薄膜铌酸锂光波导(3)为脊型光波导，薄膜铌酸锂光波导(3)两侧含有一定厚度的薄膜铌酸锂平板层。
5.根据权利要求1所述的薄膜铌酸锂光波导与InP基光电探测器异质集成结构，其特征在于，所述薄膜铌酸锂光波导(3)为矩形光波导。
6.根据权利要求1所述的薄膜铌酸锂光波导与InP基光电探测器异质集成结构，其特征在于，所述耦合层(4)为二氧化硅、氮化硅、氧化铝或聚合物。
7.根据权利要求1所述的薄膜铌酸锂光波导与InP基光电探测器异质集成结构，其特征在于，所述衬底(1)为硅、铌酸锂、碳化硅、蓝宝石或氮化铝。
8.根据权利要求1所述的薄膜铌酸锂光波导与InP基光电探测器异质集成结构，其特征在于，所述缓冲层(2)为二氧化硅、氮化硅、氧化铝或聚合物。
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| CN103489953A (zh) * | 2013-09-09 | 2014-01-01 | 中国科学院半导体研究所 | 一种双步消逝场耦合的雪崩光电探测器 |
| CN111736370A (zh) * | 2020-06-12 | 2020-10-02 | 南京中电芯谷高频器件产业技术研究院有限公司 | 一种薄膜铌酸锂基集成芯片及制备方法 |
| CN111917482A (zh) * | 2020-06-30 | 2020-11-10 | 中国电子科技集团公司第五十五研究所 | 薄膜铌酸锂基异构集成微波光子收发芯片 |
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| CN111736370A (zh) * | 2020-06-12 | 2020-10-02 | 南京中电芯谷高频器件产业技术研究院有限公司 | 一种薄膜铌酸锂基集成芯片及制备方法 |
| CN111917482A (zh) * | 2020-06-30 | 2020-11-10 | 中国电子科技集团公司第五十五研究所 | 薄膜铌酸锂基异构集成微波光子收发芯片 |
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