CN114035129A - Atomic gas cell with high transmittance, manufacturing method thereof and atomic magnetometer - Google Patents
Atomic gas cell with high transmittance, manufacturing method thereof and atomic magnetometer Download PDFInfo
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- CN114035129A CN114035129A CN202111305879.7A CN202111305879A CN114035129A CN 114035129 A CN114035129 A CN 114035129A CN 202111305879 A CN202111305879 A CN 202111305879A CN 114035129 A CN114035129 A CN 114035129A
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- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/032—Measuring direction or magnitude of magnetic fields or magnetic flux using magneto-optic devices, e.g. Faraday or Cotton-Mouton effect
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/0011—Arrangements or instruments for measuring magnetic variables comprising means, e.g. flux concentrators, flux guides, for guiding or concentrating the magnetic flux, e.g. to the magnetic sensor
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
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- G01R33/0052—Manufacturing aspects; Manufacturing of single devices, i.e. of semiconductor magnetic sensor chips
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Abstract
The application discloses atom gas chamber and preparation method and atom magnetometer with high transmissivity, atom gas chamber includes: the glass air chamber is provided with a first through hole and a second through hole at two opposite sides; the first cavity mirror structure is arranged on one side, far away from the second through hole, of the first through hole; the second cavity mirror structure is arranged on one side, far away from the first through hole, of the second through hole; the first multi-reflection cavity is arranged on the surface of one side, away from the first through hole, of the first cavity mirror structure; and the second multi-reflecting cavity is arranged on one side surface of the second cavity mirror structure, which is away from the second through hole. By applying the technical scheme provided by the invention, the multi-reflection cavity is arranged outside the glass gas chamber, and the glass window with high transmissivity is matched for use, so that the high transmissivity of the atomic gas chamber can be ensured.
Description
Technical Field
The invention relates to the technical field of atomic devices, in particular to an atomic gas chamber with high transmissivity, a manufacturing method thereof and an atomic magnetometer.
Background
Among many research topics for precision measurement using atomic spectroscopy, atomic gas cells play a crucial role, and items such as atomic magnetometers, atomic interferometers, and atomic clocks are implemented without departing from atomic gas cells. The early atomic gas chamber can be formed by blowing glass, and the atomic gas chamber is produced by utilizing a hot pressing process and manufactured by utilizing an anodic bonding technology in a micromachining process, so that a new idea is developed for manufacturing the atomic gas chamber, and the large-scale and miniaturized manufacturing of the atomic gas chamber is more promising.
In experiments using atomic gas cells, various means are typically required to increase the signal-to-noise ratio in order to increase the sensitivity of the experimental measurements. Some of the most commonly used methods include increasing the power of the probe light or increasing the number of atoms, but these methods require more hardware resources and are more demanding on the experiment. Increasing the distance between the light and the atoms is also an effective means for improving the signal-to-noise ratio, but the atomic gas chamber is not suitable to be too large, so that the multi-reflection cavity is introduced into the atomic gas chamber to increase the distance between the atoms and the light, and the miniaturization of the atomic gas chamber is kept.
However, in the prior art, glue needs to be used for adhesion to fix the multi-reflection cavity inside the atomic gas chamber, so that the glue may react with atoms in the atomic gas chamber under a high temperature condition, impact between the atoms and the cavity mirror is affected, relaxation time of the atoms is reduced, and the signal-to-noise ratio of precise measurement is limited.
Disclosure of Invention
In view of this, the present application provides an atomic gas cell with high transmittance, a method for manufacturing the atomic gas cell, and an atomic magnetometer, in which a multi-reflection cavity is disposed outside a glass gas cell, and a glass window with high transmittance is used in cooperation, so as to ensure the high transmittance of the atomic gas cell.
In order to achieve the above purpose, the invention provides the following technical scheme:
an atomic gas cell having high transmissivity, the atomic gas cell comprising:
the glass air chamber is provided with a first through hole and a second through hole at two opposite sides;
the first cavity mirror structure is arranged on one side, far away from the second through hole, of the first through hole;
the second cavity mirror structure is arranged on one side, far away from the first through hole, of the second through hole;
the first multi-reflection cavity is arranged on the surface of one side, away from the first through hole, of the first cavity mirror structure;
and the second multi-reflecting cavity is arranged on one side surface of the second cavity mirror structure, which is away from the second through hole.
Preferably, in the atomic gas cell, the first cavity mirror structure and the second cavity mirror structure are the same and each have: a silicon wafer and a glass window;
and the surface of one side of the silicon wafer is fixedly connected with the glass air chamber, and the surface of the other side of the silicon wafer is fixedly connected with the glass window.
Preferably, in the atomic gas chamber, the silicon wafer and the glass gas chamber are fixedly connected through anodic bonding, and the silicon wafer and the glass window are fixedly connected through anodic bonding.
Preferably, in the atomic gas chamber, the silicon wafer is a double-side polished silicon wafer with the thickness of 20mm multiplied by 20mm, the thickness is 0.5mm, and the crystal orientation is <100 >;
the middle area of the silicon chip is also provided with a light through hole, and the light through hole is rectangular or circular.
Preferably, in the atomic gas chamber, the two opposite side surfaces of the glass window are provided with coating areas;
the coating area is used for coating an antireflection film, and the size of the coating area is not larger than that of the light through hole.
Preferably, in the atomic gas chamber, the first multi-reflection cavity is arranged opposite to the glass window, and the first multi-reflection cavity completely covers the coating region;
the second multi-reflection cavity is opposite to the glass window, and the second multi-reflection cavity completely covers the film coating area.
The invention also provides a manufacturing method of the atomic gas chamber with high transmissivity, which comprises the following steps:
providing a glass air chamber, wherein a first through hole and a second through hole are formed in two opposite sides of the glass air chamber;
a first cavity mirror structure is arranged on one side of the first through hole, which is far away from the second through hole;
a second cavity mirror structure is arranged on one side, far away from the first through hole, of the second through hole;
a first multi-reflection cavity is arranged on the surface of one side, away from the first through hole, of the first cavity mirror structure;
and a second multi-reflection cavity is arranged on the surface of one side of the second cavity mirror structure, which is far away from the second through hole.
The present invention also provides an atomic magnetometer, comprising: an atomic gas cell having high transmissivity as described in any one of the above.
Preferably, the atomic magnetometer further includes: the device comprises a heat preservation box, a placing device and a multilayer permalloy magnetic shielding barrel;
the placing device is formed by 3D printing, a first accommodating groove and a second accommodating groove are formed in the placing device, the atom air chamber is placed in the heat preservation box, the heat preservation box is placed in the first accommodating groove, the optical fiber head is placed in the second accommodating groove, so that light is emitted into the atom air chamber along a fixed angle, and the placing device is arranged in the multilayer permalloy magnetic shielding barrel.
Preferably, in the atomic magnetometer, the multilayer permalloy magnetic shielding barrel is a five-layer permalloy magnetic shielding barrel.
As can be seen from the above description, in the atomic gas chamber with high transmittance, the manufacturing method thereof and the atomic magnetometer provided by the technical solution of the present invention, the multi-reflection cavity is disposed outside the glass gas chamber, and the glass window with high transmittance is used in a matching manner, so that the high transmittance of the atomic gas chamber can be ensured. Compared with a system with a multi-reflection cavity in a glass gas chamber, the system can improve the relaxation time of the nuclear spin gas, effectively reduce the volume of the atomic gas chamber and reduce the heating power.
Furthermore, the anodic bonding method is applied to the fixation of the glass window and the silicon chip and the sealing of the glass window and the silicon chip, so that the instability and the uncontrollable error caused by artificial glue are avoided, the possible reaction of the glue and subsequently filled atoms is avoided, the standardized and batch preparation is realized, and the stability is improved.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly introduced below, it is obvious that the drawings in the following description are only embodiments of the present application, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts.
The structures, proportions, and dimensions shown in the drawings and described in the specification are for illustrative purposes only and are not intended to limit the scope of the present disclosure, which is defined by the claims, but rather by the claims, it is understood that these drawings and their equivalents are merely illustrative and not intended to limit the scope of the present disclosure.
FIG. 1 is a schematic structural diagram of an atomic gas cell with high transmittance according to an embodiment of the present invention;
FIG. 2 is a schematic structural view of a glass gas cell according to an embodiment of the present invention;
FIG. 3 is a schematic structural diagram of a silicon wafer according to an embodiment of the present invention;
FIG. 4 is a schematic structural diagram of a glass window according to an embodiment of the present invention;
fig. 5 is a schematic structural diagram of a mold according to an embodiment of the present invention;
fig. 6 is a schematic structural diagram of an atomic magnetometer according to an embodiment of the present invention.
Detailed Description
Embodiments of the present application will now be described more fully hereinafter with reference to the accompanying drawings, in which embodiments of the application are shown, and in which it is to be understood that the embodiments described are merely illustrative of some, but not all, of the embodiments of the application. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
Among many research topics for precision measurement using atomic spectroscopy, atomic gas cells play a crucial role, and items such as atomic magnetometers, atomic interferometers, and atomic clocks are implemented without departing from atomic gas cells. Early atomic gas cells could be blown from glass, and later appeared to be produced by a hot pressing process, and the atomic gas cells were fabricated by anodic bonding in a micromachining process. Opens up a new idea for the manufacture of the atomic gas chamber, and also has more prospect for the large-scale and miniaturized manufacture of the atomic gas chamber.
In experiments using atomic gas cells, various means are typically required to increase the signal-to-noise ratio in order to increase the sensitivity of the experimental measurements. Some of the most commonly used methods include increasing the power of the probe light or increasing the number of atoms, but these methods require more hardware resources and are more demanding on the experiment. Increasing the distance between light and atoms is also an effective means for improving the signal-to-noise ratio, but the atomic gas chamber is not suitable for being too large, so that the multi-reflection cavity is introduced into the atomic gas chamber to increase the distance between atoms and light, and keep the miniaturization of the atomic gas chamber.
A multi-reflecting cavity is a geometric optical cavity known as a Herriott cavity, and a conventional geometric optical cavity is understood to mean that light enters from a small hole in the front of one mirror, then reflects back and forth between the mirrors with curvature for many times, and then exits from another small hole. With the development of Herriott chambers, a wide variety of variants have evolved to date, and intensive Herriott chambers are discussed in this patent.
With the development of science and technology, the Herriott chamber is applied to the atomic magnetometer for the first time, and compared with the signal-to-noise ratio of the traditional atomic gas chamber, the experimental result is improved by more than one magnitude. Scalar magnetometers with magnetic field sensitivities on the order of sub-fT have been achievable in laboratory conditions by 2013. In 2021, it was already possible to place a part of the optical path of a multi-reflecting cavity outside the atomic gas cell for more complex system studies. With the continuous progress of scientific technology, some domestic units also develop research on multi-reflection cavities, and perform a series of researches on atomic magnetometers based on the multi-reflection cavities, and attempt to separate the multi-reflection cavities from atomic gas chambers, but the standardized manufacturing is not realized.
In the prior art, the following three problems are mainly faced in the research of the atomic gas cell containing the multi-reflection cavity: the first problem is that glue bonding is needed to fix the multi-reflection cavity inside the atomic gas chamber, but if the glue bonding method is used for fixing, not only can standardization and batch manufacturing be realized, but also the glue can react with atoms in the atomic gas chamber under high temperature. The second problem is that the multi-reflection cavity exists in the atom gas chamber, so that collision between atoms and the cavity mirror is introduced, the relaxation time of the atoms is influenced, the relaxation time is particularly obvious for the nuclear spin gas, and the reduction of the relaxation time of the atoms limits the signal-to-noise ratio of precise measurement. The third problem is that if the multi-reflection cavity is taken out of the atomic gas chamber, the problem of light power attenuation after multiple reflections is solved, and the most conceivable solution is to coat an antireflection film on the light-passing surface of the atomic gas chamber. One piece of glass has two glass surfaces, the glass surface outside the atomic gas chamber is easy to be coated, but the direct coating of the glass surface inside the atomic gas chamber cannot be effectively realized, and the high transmittance of the whole atomic gas chamber cannot be ensured in the comprehensive view.
Therefore, in order to solve the above problems, the present invention provides an atomic gas cell having a high transmittance, a method of manufacturing the same, and an atomic magnetometer. Wherein the atomic gas cell comprises:
the glass air chamber is provided with a first through hole and a second through hole at two opposite sides;
the first cavity mirror structure is arranged on one side, far away from the second through hole, of the first through hole;
the second cavity mirror structure is arranged on one side, far away from the first through hole, of the second through hole;
the first multi-reflection cavity is arranged on the surface of one side, away from the first through hole, of the first cavity mirror structure;
and the second multi-reflecting cavity is arranged on one side surface of the second cavity mirror structure, which is away from the second through hole.
As can be seen from the above description, in the atomic gas chamber with high transmittance, the manufacturing method thereof and the atomic magnetometer provided by the technical scheme of the invention, the multi-reflection cavity is arranged outside the glass gas chamber, and the glass window with high transmittance is used in a matching manner, so that the high transmittance of the atomic gas chamber can be ensured. Compared with a system with a multi-reflection cavity in a glass gas chamber, the system can improve the relaxation time of the nuclear spin gas, effectively reduce the volume of the atomic gas chamber and reduce the heating power.
Furthermore, the anodic bonding method is applied to the fixation of the glass window and the silicon chip and the sealing of the glass window and the silicon chip, so that the instability and the uncontrollable error caused by artificial glue are avoided, the possible reaction of the glue and subsequently filled atoms is avoided, the standardized and batch preparation is realized, and the stability is improved.
In order to make the aforementioned objects, features and advantages of the present application more comprehensible, the present application is described in further detail with reference to the accompanying drawings and the detailed description.
Referring to fig. 1 and 2, fig. 1 is a schematic structural diagram of an atomic gas cell with high transmittance according to an embodiment of the present invention, and fig. 2 is a schematic structural diagram of a glass gas cell according to an embodiment of the present invention.
As shown in fig. 1 and 2, the atomic gas cell includes:
the glass gas chamber 10 is provided with a first through hole 11 and a second through hole 12 on two opposite sides of the glass gas chamber 10;
a first cavity mirror structure 13 arranged at a side of the first through hole 11 away from the second through hole 12;
a second cavity mirror structure 14 disposed on a side of the second through hole 12 away from the first through hole 11;
a first multi-reflecting cavity (not shown) provided on a surface of the first cavity mirror structure 13 facing away from the first through hole 11;
a second multi-reflecting cavity (not shown) provided on a surface of the second cavity mirror structure 14 facing away from the second through hole 12.
In an embodiment of the present invention, the first cavity mirror structure 13 and the second cavity mirror structure 14 are the same and both have: a silicon wafer 21 and a glass window 22; the first surface of the silicon wafer 21 is fixedly connected with the glass window 22, and the second surface of the silicon wafer 21 is fixedly connected with the glass air chamber 10.
The silicon wafer 21 and the glass air chamber 10 and the silicon wafer 21 and the glass window 22 can be connected and fixed by an anodic bonding method.
In the embodiment of the present invention, the method for anodic bonding the silicon wafer 21 and the glass window 22 includes:
1. a wafer dicing machine is used to cut a silicon wafer 21 with 20mm multiplied by 20mm and polished double sides, the thickness is 0.5mm, and the crystal orientation is <100 >. The silicon wafer 21 may be as shown in fig. 3, and fig. 3 is a schematic structural diagram of a silicon wafer according to an embodiment of the present invention, and the size and thickness of the silicon wafer 21 may be set based on requirements, which is not limited to the method of the present invention.
2. A square with a side length of 12.5mm is cut in the middle area of the silicon wafer 21 by a laser cutting machine to form a light passing hole 211. The light passing hole 211 may be rectangular or circular, the size of the light passing hole 211 is determined by the size of the glass window 22, and the size of the glass window 22 is larger than that of the light passing hole 211.
3. The cut silicon wafer 21 is cleaned with piranha solution (concentrated sulfuric acid: hydrogen peroxide: 3: 1), and then ultrasonically cleaned with acetone, isopropyl alcohol, and pure water, respectively. The silicon wafer 21 is cleaned in order to satisfy the requirement of anodic bonding for surface cleanliness and flatness of the silicon wafer 21.
4. The two opposite side surfaces of the glass window 22 are coated, the coating area 221 is located in the central area of the glass window 22, the coating area 221 can be circular, the coating area 221 can be used for coating an antireflection film to ensure high transmittance, and the rest can be polished and then left to be bonded with the silicon wafer 21. The glass window 22 can be as shown in fig. 4, and fig. 4 is a schematic structural diagram of a glass window provided in an embodiment of the present invention, and in order to ensure standardized bonding between the subsequent silicon wafer 21 and the glass window 22, the size of the plating region 221 is not greater than the size of the light-passing hole 211.
5. And bonding and positioning the cut silicon wafer 21 and the anti-reflection film coated glass window 22 by using a self-made die.
Fig. 5 shows a schematic structural diagram of a mold according to an embodiment of the present invention, where the mold includes: a positioning member 42 and a frame 41, wherein the positioning member 42 can be a ceramic positioning member, and the frame 41 can be a copper frame. The frame 41 is provided with a first groove for positioning the silicon wafer 21, and the positioning piece 42 is provided with a second groove for positioning the glass window 22; by fixing the silicon wafer 21 in the first groove, fixing the glass window 22 in the second groove, and contacting one side surface of the glass window 22 with the first surface of the silicon wafer 21, the precision positioning of the silicon wafer 21 and the glass window 22 can be ensured by the precision of the mold.
It should be noted that the processing material of the copper frame is pure copper, which can realize both heat conduction and electric conduction, and ensure that the silicon wafer 21 is connected with the positive electrode of the power supply. The hollow part at the center is used for bonding the silicon wafer 21 and the glass air chamber 10, the glass window 22 is not contacted with the positive electrode of the power supply, and the coating area 221 is not damaged to influence the light transmittance. The ceramic spacer material is ceramic and does not allow the glass window 22 or the glass gas cell 10 to contact the positive power supply while conducting heat. The sizes of the silicon wafer 21, the glass window 22 and the glass air chamber 10 are all fixed, and the high precision of the machined die can ensure the accurate positioning among the silicon wafer, the glass window and the glass air chamber.
6. The positioned silicon wafer 21 and glass window 22 are bonded together using a home-made anodic bonding apparatus. The die is placed on the worktable of the anodic bonding device and is connected with a power supply, the anode of the power supply is connected with one end of the silicon wafer 21, and the cathode is connected with one end of the glass window 22. The anodic bonding process requires high temperature and high voltage, and the ceramic spacer can heat the silicon wafer 21 and the glass window 22 to be bonded to 280 ℃ and apply 1000V of dc voltage after allowing the temperature to stabilize for about 30 minutes. Wherein, the current in the bonding process is monitored and recorded in real time to check the bonding progress. Initially, the bonding current is typically several tens of microamperes, and after about two hours, the current drops to less than 10% of the initial value, at which point the heating device and dc voltage source are turned off, the bonding of the silicon wafer 21 to the glass window 22 is completed, and the mold is removed.
It should be noted that the anodic bonding apparatus may be composed of a heating stage, a high voltage source, a three-dimensional displacement stage and related mechanical structures.
A complete atomic gas cell requires two sides to pass light and the bonding of another set of silicon wafers 21 and glass windows 22 is done in the same way.
In the embodiment of the invention, the method for bonding the silicon wafer 21 and the glass gas chamber 10 comprises the following steps:
1. and bonding and positioning the silicon wafer 21 bonded with the glass window 22 and the glass air chamber 10 by using a self-made mold, wherein the second surface of the silicon wafer 21 is in contact with the glass air chamber 10.
2. The positioned silicon wafer 21 and the glass air chamber 10 are placed on a workbench of an anode bonding device and connected with a power supply, wherein the anode of the power supply is connected with one end of the silicon wafer 21, and the cathode of the power supply is connected with one end of the glass air chamber 10. The positioning of the glass air cell 10 and the silicon wafer 21 can also be ensured by the mold to achieve standardized bonding. The bonding process also requires high temperature and high voltage, the temperature is heated to 280 ℃ and allowed to stabilize for about 30 minutes, a direct current voltage of 1500V is applied, and bonding can be stopped when the bonding current changes to below 10% of the initial value.
The bonding of the other side of the atomic gas cell is accomplished using exactly the same steps. The atomic gas chamber finally bonded can ensure higher transmittance.
After the first cavity mirror structure 13 and the second cavity mirror structure 14 are bonded, a first multi-reflection cavity is arranged on the surface of one side of the first cavity mirror structure 13, which deviates from the first through hole 11, and a second multi-reflection cavity is arranged on the surface of one side of the second cavity mirror structure 14, which deviates from the second through hole 12. The first multi-reflecting cavity is arranged opposite to the glass window 22, and completely covers the film coating area 221; the second multi-reflecting cavity is disposed opposite to the glass window 22, and the second multi-reflecting cavity completely covers the film coating region 221.
As can be seen from the above description, in the atomic gas cell with high transmittance provided in the technical solution of the present invention, by placing the multi-reflection cavity outside the atomic gas cell and using the glass gas cell 10 with high transmittance in a matching manner, it can be ensured that only a small amount of optical power is lost. Compared with the experiment without a plurality of reflection cavities, the signal-to-noise ratio in the precise atomic spectrum measurement can be improved, and the detection sensitivity is enhanced. Compared with a system with a multi-reflection cavity in an atomic gas chamber, the nuclear spin gas heating system can improve the relaxation time of the nuclear spin gas, effectively reduce the volume of the atomic gas chamber and reduce the heating power. The transmittance is not too low like the traditional atomic gas chamber, and the multi-reflection cavity can not be adapted to multiple light passing, so that the optical power loss is caused. For the single glass window 22 in the patent, the transmissivity reaches 99.7%, and when the multi-reflection cavity with the reflection times of 22 passes through the atomic gas chamber, the transmissivity of the optical power is still 87.6%, so that the high transmissivity of the atomic gas chamber is ensured.
Further, the anodic bonding technique is applied to the bonding of the antireflection film coated glass window 22 and the silicon wafer 21 and the subsequent sealing of the glass air chamber 10 and the silicon wafer 21, and the mutual positioning of the bonded samples can be accurately ensured by means of a machined die, because the machining die ensures that the tolerance is better than 0.1 mm. In addition, glue is not needed in the scheme, and bonding can be realized in a standardized manner. The bonding avoids the possibility that the alkali metal atoms may react with the glue at high temperature when the glue is used for bonding. Meanwhile, uncertainty and inconsistency brought under the condition of manual adhesion can be avoided, standardized manufacturing of the atomic gas chambers is guaranteed, and batch production of the atomic gas chambers in the later period is facilitated.
Compared with the traditional multi-reflection cavity which is arranged in an atomic gas chamber, the atomic relaxation time can be increased, and the promotion is more obvious for the nuclear spin gas. And after the multi-reflection cavity is separated from the atomic gas chamber, the size of the atomic gas chamber can be reduced, and the requirement on heating power is reduced. In addition, the use of the multi-reflection cavity is more flexible and diversified, and the requirement of the multiple-reflection cavity on the rigor is not limited.
As described in the above embodiments, another embodiment of the present invention further provides a method for manufacturing an atomic gas cell with high transmittance, as shown in fig. 1 to 5, the method including:
step S11: as shown in fig. 2, a glass gas chamber 10 is provided, and a first through hole 11 and a second through hole 12 are provided on two opposite sides of the glass gas chamber 10;
the glass gas chamber 10 further has a gas inlet, and the gas inlet can be used for filling buffer gases such as alkali metal atoms, inert gas atoms, nitrogen and the like.
Step S12: as shown in fig. 1, a first cavity mirror structure 13 is disposed on a side of the first through hole 11 away from the second through hole 12;
in the embodiment of the present invention, the method for providing the first cavity mirror structure 13 on the side of the first through hole 11 far away from the second through hole 12 includes:
step S21: as shown in FIG. 3, a silicon wafer 21 is provided, wherein the silicon wafer 21 is a 20mm × 20mm double-side polished silicon wafer with a thickness of 0.5mm and a crystal orientation <100 >. The middle region of the silicon wafer 21 also has a light passing hole 211 of 12.5mm by 12.5 mm.
Step S22: as shown in fig. 4, a glass window 22 is provided, the two opposite side surfaces of the glass window 22 are provided with plating regions 221, the plating regions 221 are used for plating antireflection films, and the size of the plating regions 221 is not larger than that of the light through holes 211.
Step S23: as shown in fig. 5, a self-made mold is used to bond the silicon wafer 21 and the glass window 22 in position. So as to ensure the accuracy of positioning and ensure the standardized manufacture of the atomic gas chamber.
Step S24: the positioned silicon wafer 21 and glass window 22 are bonded together using an anodic bonding apparatus. The die is placed on the worktable of the anodic bonding device and is connected with a power supply, the anode of the power supply is connected with one end of the silicon wafer 21, and the cathode is connected with one end of the glass window 22. The anodic bonding process needs high temperature and high voltage, the ceramic positioning piece can heat the silicon wafer 21 and the glass window 22 to be bonded to 280 ℃, after the temperature is stabilized for about 30 minutes, 1000V direct current voltage is applied, when the current is reduced to be less than 10% of the initial value, the heating device and the direct current voltage source are closed, the bonding of the silicon wafer 21 and the glass window 22 is completed, and the mold is removed.
Step S25: the positioned silicon wafer 21 and the glass air cell 10 are bonded together using an anodic bonding apparatus. The silicon chip 21 bonded with the glass window 22 is placed on a workbench of an anodic bonding device, the second surface of the silicon chip 21 faces upwards, a glass air chamber 10 with one side of a first through hole 11 is covered, a power supply is connected, the anode of the power supply is connected with one end of the silicon chip 21, and the cathode of the power supply is connected with one end of the glass air chamber 10. The positioning of the glass air cell 10 and the silicon wafer 21 can also be ensured by the mold to achieve standardized bonding. The bonding process also requires high temperature and high voltage, the temperature is heated to 280 ℃ and allowed to stabilize for about 30 minutes, a direct current voltage of 1500V is applied, and bonding is completed when the bonding current changes to less than 10% of the initial value.
Step S13: as shown in fig. 1, a second cavity mirror structure 14 is disposed on a side of the second through hole 12 away from the first through hole 11;
in the embodiment of the present invention, the method of disposing the second cavity mirror structure 14 on the side of the second through hole 12 away from the first through hole 11 is the same as the method of disposing the first cavity mirror structure 13 on the side of the first through hole 11, and is not described herein again.
Step S14: a first multi-reflection cavity is arranged on the surface of one side, away from the first through hole 11, of the first cavity mirror structure 13; wherein, the first multi-reflecting cavity is arranged opposite to the glass window 22, and the first multi-reflecting cavity completely covers the film coating area 221;
step S15: a second multi-reflecting cavity is arranged on a side surface of the second cavity mirror structure 14 facing away from the second through hole 12. The second multi-reflecting cavity is disposed opposite to the glass window 22, and the second multi-reflecting cavity completely covers the coating region 221.
After the atomic gas chamber 30 is manufactured, the atomic gas chamber 30 can be connected to a vacuum device according to actual experimental requirements, buffer gases such as alkali metal atoms, inert gas atoms and nitrogen are filled into the atomic gas chamber, and finally the atomic gas chamber is sealed by flame burning.
As can be seen from the above description, in the method for manufacturing an atomic gas cell with high transmittance provided by the technical solution of the present invention, by placing the multi-reflection cavity outside the atomic gas cell and using a glass gas cell with high transmittance in a matching manner, it is ensured that only a small amount of optical power is lost. Compared with the experiment without a plurality of reflection cavities, the signal-to-noise ratio in the precise atomic spectrum measurement can be improved, and the detection sensitivity is enhanced. Compared with a system with a multi-reflection cavity in an atomic gas chamber, the nuclear spin gas heating system can improve the relaxation time of the nuclear spin gas, effectively reduce the volume of the atomic gas chamber and reduce the heating power. The transmittance is not too low like the traditional atomic gas chamber, and the multi-reflection cavity can not be adapted to multiple light passing, so that the optical power loss is caused. For a single glass window in the patent, the transmissivity reaches 99.7%, and when the multi-reflection cavity with the reflection times of 22 passes through the atomic gas chamber, the transmissivity of the optical power is still 87.6%, so that the high transmissivity of the atomic gas chamber is ensured.
Furthermore, the anodic bonding method is applied to the fixation of the glass window and the silicon chip and the sealing of the glass window and the silicon chip, so that the instability and the uncontrollable error caused by artificial glue are avoided, the possible reaction of the glue and subsequently filled atoms is avoided, the standardized and batch preparation is realized, and the stability is improved.
Through the foregoing description of the embodiments, another embodiment of the present invention further provides an atomic magnetometer, as shown in fig. 6, fig. 6 is a schematic structural diagram of the atomic magnetometer provided by the embodiment of the present invention, where the atomic magnetometer includes: an atomic gas cell 30 having high transmittance as described in the above embodiment.
As shown in fig. 6, the atomic magnetometer further includes: a heat preservation box, a placing device 33 and a multilayer permalloy magnetic shielding barrel;
the placing device 33 is formed by 3D printing, a first accommodating groove 35 and a second accommodating groove 34 are formed in the placing device 33, the atom gas chamber 30 is placed in the heat preservation box, the heat preservation box is placed in the first accommodating groove 35, the optical fiber head is placed in the second accommodating groove 34, so that light is emitted into the atom gas chamber 30 along a fixed angle (the angle can be set based on requirements, such as 15 degrees), and the placing device 33 is arranged in the multilayer permalloy magnetic shielding barrel. The multilayer permalloy magnetic shielding barrel can be a five-layer permalloy magnetic shielding barrel.
As can be seen from the above description, in the atomic magnetometer provided in the technical scheme of the present invention, the multi-reflection cavity is disposed outside the glass gas chamber, and the glass window having high transmittance is used in cooperation, so that the high transmittance of the atomic gas chamber can be ensured. Compared with a system with a multi-reflection cavity in a glass gas chamber, the signal-to-noise ratio in precise atomic spectrum measurement can be improved, the detection sensitivity is enhanced, the relaxation time of the nuclear spin gas can be prolonged, the volume of the atomic gas chamber is effectively reduced, and the heating power is reduced.
And the anodic bonding method is applied to the fixation of the glass window and the silicon chip and the sealing of the glass window and the silicon chip, so that the instability and the uncontrollable error caused by artificial glue are avoided, the possible reaction of the glue and subsequently charged atoms is avoided, the standardized and batch preparation is realized, and the stability is improved.
The embodiments in the present description are described in a progressive manner, or in a parallel manner, or in a combination of a progressive manner and a parallel manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments can be referred to each other. The method for manufacturing the atomic gas chamber and the atomic magnetometer disclosed in the embodiments correspond to the atomic gas chamber disclosed in the embodiments, so that the description is relatively simple, and the relevant points can be referred to the description of the atomic gas chamber.
It is noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that an article or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such article or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other like elements in an article or device that comprises the element.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present application. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the application. Thus, the present application is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (10)
1. An atomic gas cell having a high transmittance, the atomic gas cell comprising:
the glass air chamber is provided with a first through hole and a second through hole at two opposite sides;
the first cavity mirror structure is arranged on one side, far away from the second through hole, of the first through hole;
the second cavity mirror structure is arranged on one side, far away from the first through hole, of the second through hole;
the first multi-reflection cavity is arranged on the surface of one side, away from the first through hole, of the first cavity mirror structure;
and the second multi-reflecting cavity is arranged on one side surface of the second cavity mirror structure, which is away from the second through hole.
2. An atomic gas cell according to claim 1, characterised in that said first and second cavity mirror structures are identical, each having: a silicon wafer and a glass window;
and the surface of one side of the silicon wafer is fixedly connected with the glass air chamber, and the surface of the other side of the silicon wafer is fixedly connected with the glass window.
3. The atomic gas cell according to claim 2, wherein the silicon wafer is fixed to the glass gas cell by anodic bonding, and the silicon wafer is fixed to the glass window by anodic bonding.
4. The atomic gas cell according to claim 3, wherein the silicon wafer is a 20mm x 20mm double-side polished silicon wafer with a thickness of 0.5mm and a crystal orientation <100 >;
the middle area of the silicon chip is also provided with a light through hole, and the light through hole is rectangular or circular.
5. An atomic gas cell according to claim 4, characterized in that the glass window has coating areas on its opposite surfaces;
the coating area is used for coating an antireflection film, and the size of the coating area is not larger than that of the light through hole.
6. The atomic plenum of claim 5, wherein the first multi-reflecting cavity is disposed opposite the glass window and completely covers the plated area;
the second multi-reflection cavity is opposite to the glass window, and the second multi-reflection cavity completely covers the film coating area.
7. A method of making an atomic gas cell having high transmissivity, the method comprising:
providing a glass air chamber, wherein a first through hole and a second through hole are formed in two opposite sides of the glass air chamber;
a first cavity mirror structure is arranged on one side of the first through hole, which is far away from the second through hole;
a second cavity mirror structure is arranged on one side, far away from the first through hole, of the second through hole;
a first multi-reflection cavity is arranged on the surface of one side, away from the first through hole, of the first cavity mirror structure;
and a second multi-reflection cavity is arranged on the surface of one side of the second cavity mirror structure, which is far away from the second through hole.
8. An atomic magnetometer, comprising: the atomic gas cell having high transmittance according to any one of claims 1 to 6.
9. The atomic magnetometer of claim 8, further comprising: the device comprises a heat preservation box, a placing device and a multilayer permalloy magnetic shielding barrel;
the placing device is formed by 3D printing, a first accommodating groove and a second accommodating groove are formed in the placing device, the atom air chamber is placed in the heat preservation box, the heat preservation box is placed in the first accommodating groove, the optical fiber head is placed in the second accommodating groove, so that light is emitted into the atom air chamber along a fixed angle, and the placing device is arranged in the multilayer permalloy magnetic shielding barrel.
10. The atomic magnetometer of claim 9, wherein the multilayer permalloy magnetic shielding barrel is a five-layer permalloy magnetic shielding barrel.
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| CN116609710A (en) * | 2023-03-29 | 2023-08-18 | 中国科学技术大学 | Manufacturing method of atomic air chamber containing multiple reflecting cavities based on cavity mirror side bonding |
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| CN108226821A (en) * | 2018-02-10 | 2018-06-29 | 金代圣 | The method for improving atom magnetometer detection sensitivity |
| CN110146831A (en) * | 2019-05-30 | 2019-08-20 | 湖南科技大学 | Chamber cascade enhancing and the adjustable atomic air chamber of sensitivity |
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| CN116609710B (en) * | 2023-03-29 | 2024-03-29 | 中国科学技术大学 | Manufacturing method of atomic air chamber containing multiple reflecting cavities based on cavity mirror side bonding |
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