CN114034942B - High-flux measurement method for piezoelectric coefficient of piezoelectric film - Google Patents
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- 238000000691 measurement method Methods 0.000 title claims abstract description 9
- 239000010408 film Substances 0.000 claims abstract description 64
- 238000012360 testing method Methods 0.000 claims abstract description 40
- 239000010409 thin film Substances 0.000 claims abstract description 25
- 239000000463 material Substances 0.000 claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 238000000034 method Methods 0.000 claims abstract description 22
- 238000005259 measurement Methods 0.000 claims abstract description 20
- 238000004519 manufacturing process Methods 0.000 claims abstract description 7
- 238000005452 bending Methods 0.000 claims description 7
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 238000007405 data analysis Methods 0.000 claims description 2
- 239000002210 silicon-based material Substances 0.000 claims description 2
- 230000004907 flux Effects 0.000 claims 1
- 238000012512 characterization method Methods 0.000 abstract description 4
- 238000002360 preparation method Methods 0.000 abstract description 4
- 239000000523 sample Substances 0.000 description 5
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
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- 238000006243 chemical reaction Methods 0.000 description 2
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R29/00—Arrangements for measuring or indicating electric quantities not covered by groups G01R19/00 - G01R27/00
- G01R29/22—Measuring piezoelectric properties
Abstract
The invention relates to a high-flux measurement method for piezoelectric coefficients of piezoelectric films, which belongs to the technical field of piezoelectric coefficient measurement and comprises the following steps: manufacturing a test piece comprising a plurality of laminated cantilever beams, wherein each laminated cantilever beam is sequentially provided with a substrate layer, a bottom electrode layer, a piezoelectric film layer and a top electrode layer; applying voltage to the piezoelectric thin film layer through the bottom electrode layer and the top electrode layer, and acquiring a deformation image of each laminated cantilever beam through a digital holographic system to obtain the maximum deflection of each cantilever beam; and obtaining the piezoelectric coefficient of the piezoelectric film on each laminated cantilever beam according to the structural size and material parameters of the substrate layer on the laminated cantilever beam, the applied voltage value and the obtained maximum deflection. The method can simultaneously measure more than one and hundreds of piezoelectric coefficients of the piezoelectric film at one time, realizes high-flux measurement of the piezoelectric coefficients of the film material, and provides a quick and effective piezoelectric performance characterization means for high-flux preparation of the piezoelectric film.
Description
Technical Field
The invention belongs to the technical field of piezoelectric coefficient measurement, and particularly relates to a high-flux measurement method for piezoelectric coefficients of a piezoelectric film.
Background
The piezoelectric film is an extremely important functional structure for realizing electromechanical energy conversion and coupling, and the electromechanical coupling performance of the piezoelectric film has an important influence on the electromechanical energy conversion efficiency of the micro-machine. The piezoelectric coefficient is an important parameter for representing the electromechanical coupling performance of the piezoelectric film, and is very important for quickly preparing the piezoelectric film with high performance by efficiently and accurately measuring the piezoelectric coefficient of the piezoelectric film depending on the components of the film material and the thickness of the film.
At present, piezoelectric coefficient measurement methods of piezoelectric films mainly include methods based on positive piezoelectric effect and methods based on inverse piezoelectric effect, wherein the former method is to apply alternating mechanical load to a sample and measure charge information generated by the piezoelectric film to obtain the piezoelectric coefficient, and the methods include local vertical loading of the film, bubbling air pressure loading, cantilever beam vibration loading and the like; the latter is to apply alternating electric load to the piezoelectric film, measure the vibration displacement of the test piece to obtain the piezoelectric coefficient, including laser Doppler measurement and laser interferometry. In addition to these two types of methods, which can only measure a single sample, there are piezoelectric force microscopy and microwave microscopy.
The inventor finds that in the two methods, the probe is used for scanning the array test piece at present, the piezoelectric film samples are measured one by one, the piezoelectric coefficients of the samples in batches are obtained, and high-throughput measurement is realized. However, these two methods have high requirements on the positional accuracy of the specimen array samples, and the measurement cycle is long if hundreds of specimens are measured.
Disclosure of Invention
Aiming at the problem of long measurement period in the prior art, the invention provides a high-flux measurement method for piezoelectric coefficients of a piezoelectric film. The method can simultaneously measure the piezoelectric coefficients of a plurality of piezoelectric films or even more than one hundred piezoelectric films at one time, realizes high-flux measurement of the piezoelectric coefficients of the film materials, and provides a quick and effective piezoelectric performance characterization means for high-flux preparation of the piezoelectric films.
The embodiment of the invention provides a high-flux measurement method for piezoelectric coefficients of a piezoelectric film, which comprises the following steps:
manufacturing a test piece comprising a plurality of laminated cantilever beams, wherein each laminated cantilever beam is sequentially provided with a substrate layer, a bottom electrode layer, a piezoelectric film layer and a top electrode layer;
applying voltage to the bottom electrode layer and the top electrode layer, and acquiring a deformation image of each laminated cantilever beam through a digital holographic system to obtain the maximum deflection of each laminated cantilever beam;
and obtaining the piezoelectric coefficient of the piezoelectric film on each laminated cantilever beam according to the structural size and material parameters of the substrate layer on the laminated cantilever beam, the applied voltage value and the obtained maximum deflection.
Preferably, a common bottom electrode and a common top electrode are arranged on the test piece, wherein the common bottom electrode is connected with the bottom electrode layer of each laminated cantilever beam, the common top electrode is connected with the top electrode layer of each laminated cantilever beam, and the common bottom electrode and the common top electrode are connected with the same power supply.
Preferably, all bottom and top electrode layers on the test piece are applied simultaneouslyVoltage is applied to make the piezoelectric film layer on each laminated cantilever beam be at e 31 And (4) working modes.
Preferably, the digital holographic system comprises an image analyzer, a laser source, a beam splitter and a reflector, wherein laser emitted by the laser source is split into a target beam and a reference beam through the beam splitter, the target beam irradiates the test piece and is reflected to the image analyzer, the reference beam is reflected to the image analyzer through the reflector, and the image analyzer obtains the maximum deflection deformation of each laminated cantilever beam by receiving the reflected target beam and reference beam.
Preferably, the substrate layer is made of silicon material, the bottom electrode layer and the top electrode layer are made of platinum or silver, and the material composition or the thickness of the piezoelectric film layer changes in a gradient manner.
Preferably, in the process of manufacturing the test piece, it is ensured that the ratio of the thickness of the base layer to the thickness of the piezoelectric thin film layer is greater than 100.
Preferably, a piezoelectric coefficient model of the piezoelectric film is obtained, and the structural size and material parameters of the cantilever substrate layer, the applied voltage value and the obtained maximum deflection are input into the model to obtain the piezoelectric coefficient of the piezoelectric film.
The invention has the following beneficial effects:
the piezoelectric coefficient measuring method provided by the invention can acquire the maximum deformation deflection of a plurality of or even more than one hundred laminated cantilever beams under the condition that the top electrode layer and the bottom electrode layer of the piezoelectric film are electrified by a digital holographic system at one time, and then substitutes the structural size and material parameters of the substrate layer, the applied voltage value and the obtained maximum deflection of the laminated cantilever beams into a piezoelectric coefficient principle model, thereby obtaining the piezoelectric coefficients of the piezoelectric films, realizing the high-flux measurement of the piezoelectric coefficients of the film materials, and providing a quick and effective piezoelectric performance characterization means for the high-flux preparation of the piezoelectric films.
Drawings
FIG. 1 is a schematic structural diagram of a device for measuring piezoelectric coefficients of a piezoelectric thin film according to an embodiment of the present invention;
FIG. 2 is a schematic structural diagram of a cantilever array test piece according to an embodiment of the present invention;
FIG. 3 is a schematic view of a local cantilever structure of a test piece provided in an embodiment of the present invention;
fig. 4 is a diagram of a prediction result of the principle model according to the embodiment of the present invention.
In the figure: 1. the device comprises a top electrode layer, 2, a piezoelectric thin film layer, 3, a bottom electrode layer, 4, a substrate layer, 5, a common bottom electrode, 6, a common top electrode, 7, a cantilever beam array test piece, 8, a CCD camera, 9, a laser source, 10, a beam splitter, 11, an insulating block, 12, a reflector, 13, an air flotation shock insulation table, 14, a direct current power supply, 15 and a computer.
Detailed Description
As shown in fig. 1, an embodiment of the present invention provides a device for measuring piezoelectric coefficients of a piezoelectric thin film, which mainly includes a test bench, a cantilever array test piece 7 and a digital holographic system, where the cantilever array test piece 7 is provided with a plurality of horizontally arranged laminated cantilevers, and the top of each laminated cantilever is a top electrode layer 1, a piezoelectric thin film layer 2, a bottom electrode layer 3, and a substrate layer 4 from top to bottom, where the top electrode layer 1 and the bottom electrode layer 3 are respectively connected to a positive electrode and a negative electrode of a power supply, and the digital holographic system obtains a holographic image of a test piece by using interference of a target beam reflected by the cantilever array test piece 7 and a reference beam, and performs data analysis on the obtained holographic image, so as to obtain deflection deformation of each laminated cantilever.
Specifically, referring to fig. 2 and 3, the number of the laminated cantilever beams on the cantilever beam array test piece 7 in this embodiment may be several to hundreds, and the laminated cantilever beams sequentially include a substrate layer 4, a bottom electrode layer 3, a piezoelectric film layer 2, and a top electrode layer 1 from bottom to top.
In this embodiment, a dc power supply is connected between the common top electrode and the common bottom electrode, and a voltage is applied to the piezoelectric thin film layer through the common top electrode and the common bottom electrode, so that the piezoelectric thin film layer is at e after being electrified 31 The working mode, and then the laminated cantilever beam is in the bending deformation mode, in particular when the piezoelectric film layer 2 on the laminated cantilever beam is subjected to axial extension generated by voltage,the cantilever beam generates bending deformation.
Preferably, the bottom of the cantilever array test piece 7 in this embodiment is fixed on the workbench through an insulating block 11.
Referring to fig. 1, the image acquisition system in the present embodiment is a digital holographic measurement system, which mainly includes a CCD camera 8, a laser source 9, a beam splitter 10, and a reflective mirror 12, wherein the CCD camera 8 is placed directly above the cantilever array test piece 7, and the laser source 9, the beam splitter 10, and the reflective mirror 12 are disposed between the cantilever array test piece 7 and the CCD camera 8.
The laser source 9, the beam splitter 10 and the reflective mirror 12 are coaxially arranged, the beam splitter 10 is arranged between the laser source 9 and the reflective mirror 12, and the beam splitter 10 is arranged at the top of the cantilever array test piece 7, so that a light beam emitted by the laser source 9 is split into a target light beam and a reference light beam through the beam splitter 10, wherein the target light beam can directly irradiate on the cantilever array test piece 7 and is reflected into the CCD camera 8 through the cantilever array test piece 7; the reference beam can be emitted into the CCD camera 8 through the mirror 12, so that the target beam and the reference beam can be contrastingly analyzed by the CCD camera 8 to obtain the deformation of the entire piezoelectric thin film layer 2.
In order to apply voltage to all the top electrode layers 1 and the bottom electrode layers 3 on the substrate 4 in this embodiment, as shown in fig. 2, in this embodiment, a common top electrode 6 and a common bottom electrode 5 may be disposed on the cantilever array test piece 7, the common top electrode 6 is connected to the top electrode layer 1 on each laminated cantilever, the common bottom electrode 5 is connected to the bottom electrode layer 3 on each cantilever, and the common top electrode 6 and the common bottom electrode 5 are directly connected to the dc power supply 14, as shown in fig. 1, so that voltage can be applied to each laminated cantilever simultaneously to perform simultaneous testing on all the laminated cantilevers.
Preferably, the test bench in this embodiment is preferably an air-float vibration isolation bench 13, and the air-float vibration isolation bench 13 can prevent the peripheral vibration from affecting the measurement of the device.
Referring to fig. 1, the measuring device in this embodiment further includes a computer 15, wherein the computer 15 is connected to the CCD camera 8, and the computer 15 is connected to the dc power supply 14, so that the computer 15 can control the whole measuring experiment and observe the measuring result on the computer 15.
The following describes in detail a measurement method based on the above measurement apparatus, which mainly includes the following steps:
before measurement, based on Euler Bernoulli Beam theory, piezoelectric film layer e was used 31 The working mode provides a principle model for measuring the piezoelectric coefficient of the piezoelectric film.
(1)e 31 The constitutive equation of the mode laminated cantilever beam piezoelectric thin film material is as follows
Wherein the content of the first and second substances,
e 31 and
respectively, the elastic constant, piezoelectric stress coefficient, and dielectric constant of the piezoelectric material. When a voltage V is applied to a voltage between the upper and lower surfaces of the piezoelectric film, the potential in the piezoelectric layer is
In the formula, h p Is the piezoelectric film thickness.
At this time, the piezoelectric film is at e 31 Mode, axial deformation is produced, which produces bending of the laminated cantilever beam. For the case that the thickness of the piezoelectric layer is much smaller than that of the base layer, the bending moment applied to the piezoelectric laminated cantilever beam is
Where b is the width of the cantilever beam, h s Is the thickness of the base layer.
(2) The bending deflection of the laminated cantilever beam can be obtained by considering the constant bending moment and the fixed end conditions of the laminated cantilever beam
Where δ and l are cantilever end deflection and length, respectively. The strain and stress of the piezoelectric film layer can be obtained by a beam geometric equation and a balance equation
In the formula, E s Is the elastic constant of the base layer material.
(3) The potential, strain and stress of the piezoelectric film layer are substituted into the constitutive equation of the piezoelectric material to obtain the piezoelectric coefficient of the piezoelectric film material
From the prediction result of the principle model, as shown in fig. 4, in the case that the thickness of the piezoelectric film is much smaller than the thickness of the substrate, for example, smaller than 100 times, the principle model can be approximated as
The approximate model can estimate the piezoelectric coefficient without predicting other performance parameters of the piezoelectric film.
The following begins the piezoelectric coefficient test for a batch of piezoelectric thin film layers:
the method comprises the following steps: manufacturing a test piece comprising a plurality of laminated cantilever beams, wherein each laminated cantilever beam is respectively provided with a substrate layer, a bottom electrode layer, a piezoelectric film layer and a top electrode layer from bottom to top;
specifically, in the first step, a bottom electrode layer, a piezoelectric film layer, and a top electrode layer may be plated on the substrate layer in advance, then each laminated cantilever beam is processed, and finally, a common bottom electrode and a common top electrode are processed.
Or, processing cantilever beams on the substrate layer in advance, then plating a bottom electrode layer, a piezoelectric film layer and a top electrode layer on each cantilever beam in sequence to form a laminated cantilever beam, and finally processing a common bottom electrode and a common top electrode.
Preferably, the substrate layer in this embodiment may be made of silicon or the like, the bottom electrode layer and the top electrode layer are made of platinum or silver, the piezoelectric thin film layer is a material sample to be tested, and the material composition or thickness may change in a gradient manner.
In this embodiment, the ratio of the thickness of the base layer to the thickness of the piezoelectric thin film layer is greater than 100.
Step two: connecting the common bottom electrode and the common top electrode with a power supply, applying voltage to the piezoelectric film, and acquiring a deformation image of each laminated cantilever beam through a digital holographic system to obtain the maximum deflection of each laminated cantilever beam;
specifically, in the step, the cantilever array test piece array is placed in a digital holographic system window, then a power supply is adjusted to output appropriate voltage signals, voltage is applied to a common top electrode and a common bottom electrode on the laminated cantilever beams, the piezoelectric film layer can axially deform under the inverse piezoelectric effect, meanwhile, the laminated cantilever beams are bent and deformed, at the moment, the digital holographic system is started, the CCD camera can collect holographic images of the deformation of the laminated cantilever beams, and the maximum deflection deformation of each laminated cantilever beam is obtained through analysis.
Step three: obtaining the piezoelectric coefficient of the piezoelectric film on each laminated cantilever beam according to the structural size and material parameters of the substrate layer on the laminated cantilever beams, the applied voltage value and the obtained maximum deflection;
specifically, in this step, the structural size and material parameters of the substrate layer, the output voltage, and the measured maximum deflection deformation of the end portion of each laminated cantilever beam may be substituted into the principle model to obtain the piezoelectric coefficient of each laminated cantilever beam piezoelectric material sample.
Therefore, the measuring method provided by the embodiment can measure the piezoelectric coefficient e of the batch samples on the array test piece at one time 31 The method realizes high-flux measurement of the piezoelectric coefficient of the piezoelectric film material, and provides a quick and effective piezoelectric performance characterization means for high-flux preparation of the piezoelectric film.
Finally, the above embodiments are only intended to illustrate the technical solutions of the present invention and not to limit the present invention, and although the present invention has been described in detail with reference to the preferred embodiments, it will be understood by those skilled in the art that modifications or equivalent substitutions may be made on the technical solutions of the present invention without departing from the spirit and scope of the technical solutions, and all of them should be covered by the claims of the present invention.
Although the embodiments of the present invention have been described with reference to the accompanying drawings, it is not intended to limit the scope of the invention, and it should be understood by those skilled in the art that various modifications and variations can be made without inventive changes in the technical solutions of the present invention.
Claims (7)
1. A high-flux measurement method for piezoelectric coefficients of piezoelectric films is characterized by comprising the following steps:
manufacturing a test piece comprising a plurality of laminated cantilever beams, wherein each laminated cantilever beam is sequentially provided with a substrate layer, a bottom electrode layer, a piezoelectric film layer and a top electrode layer;
applying voltage to the piezoelectric film layer through the bottom electrode layer and the top electrode layer, and acquiring a deformation image of each laminated cantilever beam through a digital holographic system to obtain the maximum deflection of each laminated cantilever beam;
obtaining the piezoelectric coefficient of the piezoelectric film on each laminated cantilever beam according to the structural size and material parameters of the substrate layer on each laminated cantilever beam, the applied voltage value and the obtained maximum deflection;
arranging a common bottom electrode and a common top electrode on the test piece, wherein the common bottom electrode is connected with the bottom electrode layer of each cantilever beam, the common top electrode is connected with each top electrode layer, and the common bottom electrode and the common top electrode are connected with the same power supply; the power supply is a direct current power supply;
applying a voltage to the piezoelectric thin film layer through the common top electrode and the common bottom electrode to make the piezoelectric thin film layer be in e after being electrified 31 A working mode, so that the laminated cantilever beam is in a bending deformation mode;
the digital holographic system comprises an image analyzer, a laser source, a beam splitter and a reflector, wherein laser emitted by the laser source is split into a target beam and a reference beam through the beam splitter, the target beam irradiates on the test piece to form scanning light and returns, the scanning light interferes with the reference beam reflected by the reflector through the beam splitter, and the image analyzer records interference images and performs data analysis on the interference images to obtain the maximum deflection deformation of each laminated cantilever; thereby obtaining deformation of the entire piezoelectric thin film layer.
2. A method for high throughput measurement of piezoelectric coefficient of piezoelectric thin film as in claim 1 wherein voltage is applied simultaneously to all bottom and top electrode layers on the test piece to bring the piezoelectric thin film layer on each laminated cantilever beam to e 31 And (4) working modes.
3. A method for high throughput measurement of piezoelectric coefficient of piezoelectric thin film as claimed in claim 1, wherein the base layer is made of silicon material, the bottom and top electrodes are made of platinum or silver, and the material composition or thickness of the piezoelectric thin film layer is varied in gradient.
4. A method for high throughput measurement of the piezoelectric coefficient of a piezoelectric thin film as claimed in claim 1, wherein the ratio of the thickness of the base layer to the thickness of the piezoelectric thin film is ensured to be greater than 100 during the fabrication of the test piece.
5. The method for high-throughput measurement of piezoelectric coefficients of piezoelectric films according to claim 1, wherein a piezoelectric coefficient model of the piezoelectric film is obtained, and the piezoelectric coefficient of the piezoelectric film is obtained by inputting cantilever beam substrate layer structure size and material parameters, applied voltage value and obtained maximum deflection into the model.
6. The method for high throughput measurement of piezoelectric coefficient of piezoelectric thin film according to claim 1, wherein in the process of manufacturing the test piece including the laminated cantilever beam, the substrate layer, the bottom electrode layer, the piezoelectric thin film layer and the top electrode layer are sequentially coated on the test piece, and then the plurality of laminated cantilever beams are processed on the test piece.
7. The method for high flux measurement of piezoelectric coefficient of piezoelectric film according to claim 1, wherein in the process of fabricating a test piece comprising laminated cantilevers, a plurality of cantilevers are first fabricated on the test piece, and then a substrate layer, a bottom electrode layer, a piezoelectric thin film layer and a top electrode layer are sequentially plated on top of each cantilever to form the laminated cantilever.
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