CN114024110B - Adjustable high-frequency electromagnetic band gap band-pass filter - Google Patents
Adjustable high-frequency electromagnetic band gap band-pass filter Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/207—Hollow waveguide filters
- H01P1/208—Cascaded cavities; Cascaded resonators inside a hollow waveguide structure
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- H—ELECTRICITY
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- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
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Abstract
The invention discloses an adjustable high-frequency electromagnetic band gap band-pass filter, and belongs to the field of microwave/millimeter wave filters. The high frequency electromagnetic band gap band-pass filter is manufactured by an LTCC process and comprises the following components: the EBG resonant cavity comprises a capacitor structure. According to the filter, the high-Q-value capacitor structure is introduced into the EBG cavity, so that the working frequency of the filter is greatly reduced, the small-size EBG structure can work in a low-frequency band, the working frequency can be adjusted by adjusting the size of the capacitor plate, and the relative bandwidth is kept unchanged; the invention adopts a multilayer structure, and improves the energy storage capacity of the filter and the Q value by adding the dielectric plate and the metal plate structure on the bottom layer; in addition, the invention has the advantages of simplicity, adjustability, simple structure, easy integration and the like, and can be applied to the future high-frequency field.
Description
Technical Field
The invention relates to an adjustable high-frequency electromagnetic band gap band-pass filter, and belongs to the field of microwave/millimeter wave filters.
Background
With the rapid development of wireless communication technology, modern communication systems have more stringent requirements for signal selection. And the existing frequency spectrum resources are more and more tense nowadays, and the high working frequency, the wide out-of-band stop band and the high squareness degree become the mainstream direction of the filter development. Therefore, the development of high-performance millimeter wave filters is receiving wide attention, but the millimeter wave filters based on the traditional microstrip line or waveguide structure generally have the problems of complex structure, overlarge volume and the like, and due to the existence of high-order modes, the two types of filters can generate higher harmonics at high frequency to influence the out-of-band performance.
The scholars have proposed many solutions to the above problems, such as: transmission zero is generated by comb lines, load stub resonators and the like to improve the out-of-band rejection capability of the microstrip filter, but the structures can increase extra circuit area, and strict impedance selection is required for part of microstrip structures. In addition, other schemes have been proposed by scholars, such as suppressing the generation of harmonics at specific locations by introducing a Defected Ground Structure (DGS), exciting additional coupling. Although the method does not affect the circuit size, the number of structural layers is large, and the design is complex.
For cavity filters, such as Substrate Integrated Waveguide (SIW), the Q value of the filter is high, and the performance of the filter can be improved by controlling various types of coupling between cavities, but the Waveguide filter suffers from the problem of over-size. There have also been improvements made by researchers to half-mode, quarter-mode and eighth-mode substrate integrated waveguides, but they still suffer from the problem of being bulky compared to other types of filters.
In view of the above-mentioned problems commonly existing in the millimeter wave filter of the conventional microstrip line or waveguide structure, attention has been paid to an Electromagnetic Band Gap (EBG) filter. The EBG filter based on the periodic structure has the characteristics of high Q value, wide stop band, simple structure and the like in a high frequency band, so that the EBG filter has advantages in microwave and millimeter wave frequency band application.
The EBG filters proposed so far are generally realized by simply modifying the periodic structure of the EBG substrate, which limits the application of such filters in a wide frequency band. Meanwhile, the EBG is currently processed generally using a Printed Circuit Board (PCB) process; the filter has the problems of large size and high working frequency under the influence of low processing precision.
Disclosure of Invention
In order to solve the problems of large size, high working frequency and large influence of process machining precision of the conventional EBG filter, the invention provides an adjustable high-frequency electromagnetic band-gap band-pass filter, which comprises: an EBG resonant cavity and a bottom stacked structure;
the bottom stacking structure is positioned at the bottom of the EBG resonant cavity and used for improving the energy storage capacity and the Q value of the high-frequency electromagnetic band-gap band-pass filter;
the EBG resonant cavity is internally provided with a capacitor structure, and the resonant frequency of the high-frequency electromagnetic band-gap band-pass filter can be adjusted by adjusting the size of a capacitor plate of the capacitor.
Optionally, the high-frequency electromagnetic band gap band-pass filter includes: the capacitor comprises a top metal plate, a through hole metal plate, a metal plate embedded in a capacitor polar plate, a metal floor and a dielectric plate between the metal plates; the metal columns are embedded into and penetrate through the dielectric plate and are connected with the metal plates on two sides of the dielectric plate to form a periodic lattice structure and a cavity structure;
the top metal plate is provided with an input port and an output port;
the top metal plate, the through hole metal plate, the metal plate embedded in the capacitor polar plate, the metal floor, the dielectric plate between the metal plates and the metal column of the periodic lattice structure on the dielectric plate form an EBG resonant cavity.
Optionally, the bottom layer stack structure includes:
the metal floor comprises a metal floor and a dielectric plate between the metal floors, wherein the metal floor and the dielectric plate are stacked repeatedly, metal columns are arranged on the dielectric plate periodically, and the metal columns are embedded into and penetrate through the dielectric plate and are connected with the metal floors on two sides of the dielectric plate.
Optionally, the high-frequency electromagnetic band gap band-pass filter includes: an energy coupling structure;
the energy coupling structure is designed on the top metal plate and comprises: the input port and the output port adopt a slot line energy coupling structure and are used for realizing input and output coupling of energy.
Optionally, the input impedance and the coupling coefficient of the high-frequency electromagnetic bandgap band-pass filter are changed by adjusting the length of the slot line and the radius of the hollow circle.
Optionally, the capacitor structure is: the capacitor plate embedded in the metal plate of the capacitor plate forms a capacitance effect with the upper and lower metal plates and is connected to the top metal plate through the metal column.
Optionally, the capacitor plate embedded in the metal plate of the capacitor plate is a metal disc, the metal disc and the upper and lower metal plates form the capacitor structure, and are connected to the top metal plate through a metal column, and the radius of the metal disc is adjusted to change the operating frequency of the high-frequency electromagnetic band-gap band-pass filter.
Optionally, the distance and radius of the metal posts are adjustable, and the metal posts are used for adjusting the bandwidth and the operating frequency of the filter.
Optionally, the radius of the metal column at the center of the EBG resonant cavity is adjustable, so as to adjust the electric coupling and magnetic coupling capability between the resonant cavities.
Optionally, the capability of adjusting the electric coupling and the magnetic coupling between the resonant cavities is represented as: when the radius of the metal column is increased, the electric coupling between the resonant cavities is weakened, and the magnetic coupling is enhanced.
Optionally, the high frequency electromagnetic band gap band pass filter is manufactured by LTCC process.
The invention has the beneficial effects that:
the filter provided by the invention can be manufactured by an LTCC process, and the problems of large size, high working frequency, poor uniformity and the like of the traditional EBG device are solved;
according to the EBG filter, the high-Q-value capacitor structure is introduced into the EBG cavity, so that the working frequency of the filter is greatly reduced, the small-size EBG structure can work in a low-frequency band, the resonance frequency of the filter can be adjusted by adjusting the size of the capacitor plate, and the relative bandwidth is kept unchanged;
compared with the traditional single-layer and double-layer EBG filter, the invention adopts a multi-layer structure, improves the energy storage capacity of the filter by adding a dielectric plate and a metal plate structure on the bottom layer, and improves the Q value;
different from the traditional EBG filter, the invention can enable the filter to work between 5GHz and 17GHz by simple adjustment;
in addition, the invention has the advantages of simplicity, adjustability, simple structure, easy integration and the like.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
Fig. 1 is an exploded view of the second embodiment.
Fig. 2 is a schematic diagram of a three-dimensional model according to the second embodiment.
FIG. 3 is a surface view of the top metal plate of the second embodiment.
Fig. 4 is a surface diagram of a first dielectric layer between a top metal plate and a second through-hole metal plate or a surface diagram of a second dielectric layer between the second metal plate and a third metal plate in the second embodiment.
Fig. 5 is a surface view of a second layer of via metal plate according to the second embodiment.
Fig. 6 is a surface view of a third metal plate according to example two.
Fig. 7 is a surface view of a third dielectric plate or a surface view of a fourth dielectric plate and a fifth dielectric plate between a third metal plate and a fourth metal plate according to a second embodiment of the present invention.
Fig. 8 is a simulation characteristic curve of four filters according to the present invention.
FIG. 9 is a comparison graph of S parameter simulation and actual measurement when the slot line length, the metal disc radius size and the hollow circle radius are different according to the present invention; FIG. 9a is a comparison between simulation and actual measurement characteristic curves according to the second embodiment of the present invention; FIG. 9b is a comparison of simulated and measured characteristic curves according to a third embodiment of the present invention; FIG. 9c is a comparison of simulated and measured characteristic curves according to a fourth embodiment of the present invention; FIG. 9d is a comparison of the five simulated and measured characteristic curves of the present invention.
101: top metal plate, 102: first-layer dielectric plate, 103: second-layer via-metal plate, 104: a second layer of dielectric sheet; 105: third-layer metal plate, 106: third-layer dielectric plate, 107: fourth-layer metal plate, 108: fourth-layer dielectric plate, 109: fifth-layer metal plate, 110: fifth-layer dielectric plate, 111: sixth-layer bottom-surface metal plate, 112: multiple highly uniform metallized via arrays through a first layer of dielectric slab, 113: multiple highly uniform metallized via arrays through the second dielectric plate, 114: multiple highly uniform metallized via arrays through the third dielectric slab, 115: multiple highly identical arrays of metallized vias through the fourth layer of dielectric slab, 116: a plurality of metallized through hole arrays with the same height penetrate through the fifth layer dielectric plate;
201. 202: a resonant cavity;
401 a: a central metal column penetrating through the first dielectric plate, 401b, a central metal column penetrating through the second dielectric plate, 401 c: center metal post through the third dielectric slab, 402a, 402 b: metal posts through the first dielectric plate, 402c, 402 d: a metal column penetrating through the second dielectric plate;
301: input port, 302: output port, 303: slot line, 304: a hollow circle;
501: via metal pillar, 502: the diameter of the hole;
601a, 601 b: a metal disc.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
The first embodiment is as follows:
the embodiment provides an adjustable high frequency electromagnetic band gap band-pass filter, which is characterized in that the high frequency electromagnetic band gap band-pass filter comprises: an EBG resonant cavity and a bottom stacking structure;
the bottom stacking structure is positioned at the bottom of the EBG resonant cavity and used for improving the energy storage capacity and the Q value of the high-frequency electromagnetic band-gap band-pass filter;
the EBG resonant cavity is internally provided with a capacitor structure, and the resonant frequency of the high-frequency electromagnetic band-gap band-pass filter can be adjusted by adjusting the size of a capacitor plate of the capacitor.
The high-frequency electromagnetic band gap band-pass filter provided by the embodiment introduces the high-Q value capacitor structure into the EBG cavity, so that the working frequency of the filter is greatly reduced, the small-size EBG structure can work in a low-frequency band, the resonance frequency of the filter can be adjusted by adjusting the size of the metal plate of the capacitor polar plate, and the relative bandwidth is kept unchanged;
compared with the traditional single-layer and double-layer EBG filter, the invention adopts a multi-layer structure, and improves the energy storage capacity and the Q value of the filter by adding the dielectric plate and the metal plate structure on the bottom layer.
Example two:
the present embodiment provides an adjustable high frequency electromagnetic bandgap bandpass filter.
The structure of the filter of this embodiment is shown in exploded view 1, and includes: a top metal plate 101, a first dielectric plate 102, a second through-hole metal plate 103, a second dielectric plate 104, a third metal plate 105, a third dielectric plate 106, a fourth metal plate 107, a fourth dielectric plate 108, a fifth metal plate 109, a fifth dielectric plate 110 and a sixth bottom metal plate 111;
the top metal plate 101 and the second through hole metal plate 103 are connected by a plurality of metalized through hole arrays 401 with the same height penetrating through the first dielectric plate 112; the second layer of through hole metal plate 103 and the third layer of metal plate 105 are connected by a plurality of metalized through hole arrays 113 with the same height penetrating through the second layer of dielectric plate 104; the third-layer metal plate 105 and the fourth-layer metal plate 107 are connected by a plurality of metalized through hole arrays 114 with the same height penetrating through the third-layer dielectric plate 106; the fourth-layer metal plate 107 and the fifth-layer metal plate 109 are connected by a plurality of metalized through hole arrays 115 with the same height penetrating through the fourth-layer dielectric plate 108; the fifth layer metal plate 109 and the sixth layer metal plate 111 are connected by a plurality of metalized via arrays 116 of uniform height through the third layer dielectric plate 110.
The metal columns between each two metal plates form a periodic lattice structure, which also determines the basic structure of the resonant cavity 201 and 202.
Two via hole metal columns 501 in the middle of the second layer of via hole metal plate 103 are connected to the top layer metal plate 101 through metal columns 402a and 402b in the first layer of dielectric plate upward, and connected to the metal disk 601a and the metal disk 601b in the middle of the third layer of metal plate 105 through metal columns 402c and 402d in the second layer of dielectric plate 104 downward, and the metal disk 601 is sandwiched between the second layer of via hole metal plate 103 and the fourth layer of metal plate 107, so as to form a high-Q value metal-dielectric-metal (MIM) capacitor, so that the resonant frequency of the resonant cavity 201 and the resonant cavity 202 is reduced, and the size of the device is greatly reduced.
In the present embodiment, as shown in fig. 3, the slot line 303 and the hollow circle 304 are designed on the top metal plate 101 of the resonant cavity, so that the coupling and conversion of energy are realized. The input port 301 and the output port 302 of the filter are used as input and output of energy. Meanwhile, the filter can change the input impedance of the device and the external coupling coefficient by adjusting the length of the slot line 303 and the radius of the hollow circle 304.
Fig. 4 shows a surface view of the first dielectric slab 102. The first dielectric slab 102 is the same as the second dielectric slab 104 in schematic view, and the two surfaces have similar structures and differ only in height. The metal column 401 located at the center in the first, second, and third dielectric slabs can adjust the coupling between the resonant cavity 201 and the resonant cavity 202.
The size of the via metal pillar 501 shown in fig. 5 is consistent with the size of the rest of the metal pillars except the metal pillar 401, so as to ensure uniform distribution and linearity adjustment of the electromagnetic field. The size of the aperture 502 in the second layer of via metal plate 103 affects the amount of capacitance generated by the metal disks 601a and 601b shown in fig. 6. Therefore, the size of the aperture 502 is adjusted, and the resonant frequency of the filter can be adjusted in a small range.
Fig. 7 is a schematic surface view of a third dielectric plate 106, a fourth dielectric plate 108 and a fifth dielectric plate 110, where the third, fourth and fifth dielectric plates are identical in structure. As shown in fig. 1, the third dielectric plate 106 and the metal bottom plate 107 are connected to the third metal plate 105 to form an EBG structure and a lower capacitor structure. Fourth layer dielectric-slab 108, fifth layer metal sheet 109, fifth layer dielectric-slab 110 and sixth layer bottom metal sheet 111 set up behind the fourth layer metal sheet, have promoted the energy storage ability of wave filter, improve wave filter Q value, reduce the device loss.
In each layer of dielectric slab of this embodiment, the metal columns are periodically arranged, and the radius of the metal columns is kept consistent except for the metal column 40 located at the center of the periodic metal column. The metal post radius can act to adjust the relative bandwidth of the filter. And the metal distance between the metal posts in the x-axis direction and the y-axis direction can be used for adjusting the resonant frequency of the filter.
Fig. 8 shows simulation results of S parameters of four types of electromagnetic band gap filters with different radii of metal discs 601a and 601b, as shown in the figure, the center frequencies of the filters are respectively 5.32GHz, 7.59GHz, 11.46GHz, and 17GHz, the relative bandwidths of the filters are 3%, the absolute values of insertion loss in the filters are all less than 3dB, the return loss is all better than-30 dB, the out-of-band rejection of the filters is all greater than 35dB, and the filters all have ultra-wide out-of-band rejection ranges.
The slot line 303 of this embodiment is 2.5mm in length, the hollow circle 304 has a radius of 0.45mm, and the metal circular disks 601a and 601b have a radius of 1 mm. Fig. 9a is a comparison curve of transmission coefficients S parameters of the simulation result and the actual measurement result of the filter according to this embodiment, where the actual measurement result and the simulation result are substantially consistent, the center frequency of the filter is 5.34GHz, the relative bandwidth is 3%, and the out-of-band rejection exceeds-21 dB. It is obvious that the filter still has the ultra-wide band rejection capability under the condition of not increasing an additional rejection circuit structure.
EXAMPLE III
The difference between this embodiment and the second embodiment is that, in this embodiment, the length of the slot line 303 is 1.9mm, the radius of the metal discs 601a and 601b is 0.65mm, the radius of the hollow circle 304 is changed to 0.5mm, and the S parameter simulation and actual measurement comparison curve of this embodiment is shown in fig. 9 b.
Example four
The difference between this embodiment and the second embodiment is that in this embodiment, the length of the slot line 303 is changed to 1.6mm, the radius of the metal circular disks 601a and 601b is changed to 0.4mm, and the radius of the hollow circle 304 is changed to 0.5 mm; the S parameter simulation and actual measurement comparison curve of this example is shown in FIG. 9 c.
EXAMPLE five
The present embodiment is different from the second embodiment in that, in the present embodiment, the slot line 303 is 1.3mm in length, the metal circular disks 601a and 601b are 0.354mm in radius size, and the hollow circle 304 is replaced with a slot line having a length of 0.3 mm. The S parameter simulation and actual measurement comparison curve of this example is shown in FIG. 9 d.
By combining the simulation and actual measurement comparison curves of the above embodiments, it can be seen that each filter has excellent out-of-band rejection performance without adding an additional circuit structure. With the increase of the working frequency of the filter, the insertion loss is smaller, fig. 9c shows the performance of the EBG band-pass filter working at 17GHz, the insertion loss is-1.9 dB, and the performance is excellent; the invention can keep higher precision under the condition of realizing adjustable working frequency, and can be widely applied to the future high-frequency field.
Some steps in the embodiments of the present invention may be implemented by software, and the corresponding software program may be stored in a readable storage medium, such as an optical disc or a hard disk.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents, improvements and the like that fall within the spirit and principle of the present invention are intended to be included therein.
Claims (9)
1. An adjustable high frequency electromagnetic bandgap bandpass filter, the high frequency electromagnetic bandgap bandpass filter comprising: an EBG resonant cavity and a bottom stacked structure;
the bottom stacking structure is positioned at the bottom of the EBG resonant cavity and used for improving the energy storage capacity and the Q value of the high-frequency electromagnetic band-gap band-pass filter;
the EBG resonant cavity comprises a capacitor structure, and the resonant frequency of the high-frequency electromagnetic band-gap band-pass filter is adjusted by adjusting the size of a capacitor plate of the capacitor;
the high frequency electromagnetic band gap band pass filter includes: the capacitor comprises a top metal plate, a through hole metal plate, a metal plate embedded in a capacitor polar plate and a metal floor, wherein the top metal plate, the through hole metal plate, the metal plate embedded in the capacitor polar plate and the metal floor are sequentially arranged from top to bottom, and a dielectric plate is arranged between the metal plates;
the metal columns are embedded into and penetrate through the dielectric plate and are connected with the metal plates on two sides of the dielectric plate to form a periodic lattice structure and a cavity structure;
the top metal plate is provided with an input port and an output port;
the top metal plate, the through hole metal plate, the metal plate embedded in the capacitor polar plate, the metal floor, the dielectric plate between the metal plates and the metal column of the periodic lattice structure on the dielectric plate form an EBG resonant cavity.
2. A high frequency electromagnetic bandgap bandpass filter according to claim 1, wherein the bottom stack comprises:
the metal floor comprises a metal floor and a dielectric plate between the metal floors, wherein the metal floor and the dielectric plate are stacked repeatedly, metal columns are arranged on the dielectric plate periodically, and the metal columns are embedded into and penetrate through the dielectric plate and are connected with the metal floors on two sides of the dielectric plate.
3. The high frequency electromagnetic bandgap bandpass filter according to claim 1, further comprising: an energy coupling structure;
the energy coupling structure is designed on the top metal plate and comprises: the input port and the output port adopt a slot line energy coupling structure and are used for realizing input and output coupling of energy.
4. The HF-EM bandgap bandpass filter according to claim 3, wherein the HF-EM bandgap bandpass filter changes an input impedance and a coupling coefficient of the HF-EM bandgap bandpass filter by adjusting the length of the slot line, the radius of the hollow circle.
5. A high frequency electromagnetic bandgap bandpass filter as claimed in claim 1, wherein the capacitive structure is: the capacitor plate embedded in the metal plate of the capacitor plate forms a capacitance effect with the upper and lower metal plates and is connected to the top metal plate through the metal column.
6. The high frequency electromagnetic band gap bandpass filter according to claim 5, wherein the capacitor plate embedded in the metal plate of the capacitor plate is a metal disc, the metal disc and the upper and lower metal plates form the capacitor structure and are connected to the top metal plate through a metal column, and the radius of the metal disc is adjusted to change the operating frequency of the high frequency electromagnetic band gap bandpass filter.
7. A high frequency electromagnetic bandgap bandpass filter as claimed in claim 1, wherein the spacing and radius of the metal posts are adjustable to adjust the bandwidth and operating frequency of the filter.
8. A high frequency electromagnetic band gap bandpass filter according to claim 1, wherein the radius of the metal pillar at the center of the EBG resonant cavity is adjustable for adjusting the electric coupling and magnetic coupling capability between the resonant cavities: when the radius of the metal column is increased, the electric coupling between the resonant cavities is weakened, and the magnetic coupling is enhanced.
9. The high frequency electromagnetic bandgap bandpass filter according to claim 1, wherein the high frequency electromagnetic bandgap bandpass filter is manufactured by LTCC process.
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