CN107123844A - A kind of electric tunable electro-magnetic bandgap wave filter of miniature restructural - Google Patents
A kind of electric tunable electro-magnetic bandgap wave filter of miniature restructural Download PDFInfo
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- CN107123844A CN107123844A CN201710219842.XA CN201710219842A CN107123844A CN 107123844 A CN107123844 A CN 107123844A CN 201710219842 A CN201710219842 A CN 201710219842A CN 107123844 A CN107123844 A CN 107123844A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/207—Hollow waveguide filters
- H01P1/208—Cascaded cavities; Cascaded resonators inside a hollow waveguide structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P7/00—Resonators of the waveguide type
- H01P7/06—Cavity resonators
- H01P7/065—Cavity resonators integrated in a substrate
Abstract
The present invention provides a kind of resonator/filter for being based on electro-magnetic bandgap (EBG) substrate, including top-level metallic plate, underlying metal plate, middle dielectric layer, periodicity metal column and the outside control network being made up of a series of resonator/filter working frequency control element.Wherein, periodicity EBG substrates are constituted in the metal column embedding medium layer of periodic arrangement；The energy coupling structure designed on top-level metallic plate is made up of co-planar waveguide with the line of rabbet joint；Frequency controlling elements can be built-in or CSET, be connected with central metal post, collectively form tuning of the resonant network realization to frequency.On this basis, a kind of double-passband filter, including two or more single tape wave filters based on EBG substrates, and a series of outside control network being made up of frequency controlling elements are also provided with the present invention.By sharing miniaturization and high-performance that EBG substrates realize wave filter between single tape wave filter.
Description
Technical field
The invention belongs to handle cavity resonator/wave filter of electromagnetic signal (being typically radiofrequency signal), more particularly to one
Cavity resonator/wave filter based on EBG substrates is planted, including by a series of resonator/filter working frequency control element groups
Into outside control network.The invention further relates to a kind of dual frequency filter based on EBG structures, including it is two or more
Single tape wave filter and outside control network.
Background technology
Multiband resource in radio communication is widely used in the communication apparatus such as smart mobile phone and tablet personal computer.With mobile phone
In communication system exemplified by, it is necessary to support Wifi simultaneously, bluetooth, GSM, the communication standard such as LTE is increasingly improved with to meet people
Wireless application demand.Support the small-sized band logical RF/Microwave wave filter of multiband turns into promote these communication apparatus further
Integrated important devices.
WiMax is also in wide scope wireless network, the particularly width in the range of the 2-11GHz that IEEE802.16 standards are supported
Received significant attention in broad-band wireless access.The small-sized band logical RF/Microwave wave filter of ultra wide band of 2-11GHz frequency ranges can be supported
It is the important devices of WiMax hand-hold communication appliances.
In order to obtain wide band working frequency, the present invention proposes and have extensively studied different types of wave filter.For
Plane microwave filters, 4.14-6.26GHz and 1.178-3.6GHz can be worked in respectively by having worked out, and size is respectively 17*
20mm2With 13*18mm2Microwave filter.However, due to the use of quarter-wave resonance device, Plane microwave filters are not
Wider working band can be realized.By contrast, the disappearance mode resonant cavity of capacitive column load has been demonstrated that broader work can be achieved
Make frequency band, working frequency is respectively 41.5*24.9*3.17mm in 0.98-3.48GHz and 1.9-5GHz frequency range sizes3With
30.0*18.0*4.5mm3.Moreover, using silicon chip micro fabrication, above-mentioned wave filter design can realize that reduced size is
10.0*5.0*2.5mm3, correspondence working frequency is 6-24GHz.
However, due to the limitation of the relative narrow band energy coupling ability of cavity body structure, above-mentioned wave filter return loss is with inserting
Requirement can not be met by entering loss.
EBG wave filters rely on its high QuIt is worth (internal Q), it is easy to integrated to be arisen at the historic moment with low-loss characteristic.So
And, the EBG wave filters/resonator proposed at present is generally realized by improving the periodic structure of EBG substrates, this method limit
Application of such wave filter in broad frequency range is made.
In addition, more wireless systems are in the urgent need to the multi-functional multiband application based on single broadband transceiver module.It is small
Type, planar structure turn into device essential in each transceiver configuration with high performance multi-band bandpass filter.
Multiband filter has been widely studied, and its implementation is broadly divided into three classes.The first is by combining two
Or multiple multimode resonators come realize wave filter many bands work.By the fundamental mode operation frequency and height that adjust the multimode resonator
Order frequency, makes the wave filter be operated in required frequency.The quasi resonant oscillator has the impedance rank in dual-band bandpass filter (BPF)
Four mould resonators in jump resonator (SIR), Load resonators, and four band filters.Generally, it is necessary to each humorous
Each mode of resonance of device of shaking carries out appropriate energy coupling to set up each passband.Due to the quasi resonant oscillator each mode of resonance it
Between usually interact, many band filters that should be realized in this way are sometimes difficult to be operated in frequency set in advance.
It is the single resonance device by using multimode operation to realize the function in the multistage filtering of multiple frequency bands for second.Such
Wave filter due to size is small, simple physical layout and the features such as easy design method, by the green grass or young crops of wave filter researcher
Look at.Signal isolation is not fully up to expectations between the frequency band for the double-mode double-band wave filter but realized so far using single resonance device,
There is channel-shaped stopband before second passband, influence the normal work of wave filter.
The many band filters of last class are realized by combining multiple single-frequency band filters.Each single tape wave filter works
In its respective frequency, by shared signal input output end mouthful, many bands work of wave filter is realized.Such many band filter has
Signal isolation ability between stronger frequency band.But the size of such wave filter is commonly greater than the size sum of each single tape wave filter, no
Beneficial to the system integration.
The content of the invention
It is an object of the invention to propose a kind of cavity resonator/wave filter based on EBG substrates, including by a series of filters
The outside control network of ripple device working frequency control element composition.
The specific embodiment of the present invention is a kind of cavity resonator/wave filter, including is used as periodic lattice structure
Metal column.These metal columns are embedded in middle dielectric layer, are connected with top-level metallic plate with underlying metal plate.This periodicity
Lattice structure constitutes substrate cavity resonator structure with metallic plate.Controllable capacitive and perceptual coupling are introduced by outside or built-in element
Close.
Another embodiment is a kind of controllable cavity resonant chamber/wave filter, including input and output energy coupling structure, cavity
Structure and a kind of controllable reactance structure.
Another controllable cavity resonant chamber/wave filter includes double layer of metal plate, metal above and below middle dielectric layer, dielectric layer
Post array, a kind of hat-shaped structure and capacitive or inductive load element.
Also one invention is small sized double frequency band filter, including builds two single tape filters in same EBG substrat structures
Ripple device and one group of external capacitor.
Brief description of the drawings
One of embodiments in accordance with the present invention, Fig. 1 a show the wave filter knot for having built-in capacitor based on EBG substrates
The threedimensional model schematic diagram of structure；
Fig. 1 b are profile of the wave filter on the basis of 1b-1b lines shown in Fig. 1 a；
Fig. 1 c and Fig. 1 d are the top view and bottom view of metallic plate shown in Fig. 1 a；
One of embodiments in accordance with the present invention, Fig. 2 a show the threedimensional model schematic diagram of tunable optic filter；
Fig. 2 b are the bottom view of wave filter shown in Fig. 2 a；
Fig. 2 c and Fig. 2 d are that the bottom of the tunable optic filter with three outside tuned cells of two kinds of different structures is regarded
Figure；
Fig. 3 is tuned cell equivalent circuit diagram, including lumped capacitor, lumped inductor, built-in capacitor, the poles of PIN bis-
Pipe, varactor, and can be configured such that tuning and the switch of frequency reconfigurable element；
One of embodiments in accordance with the present invention, Fig. 4 a are the threedimensional model schematic diagram of typical resonator framework；
Fig. 4 b are the partial enlarged drawing of the resonant element of resonator shown in Fig. 4 a；
One of embodiments in accordance with the present invention, Fig. 5 is the signal for the single-frequency band filter being made up of two adjacent resonators
Figure；
Fig. 6 be by two single band wave filter groups into dual frequency filter schematic diagram；
Fig. 7 is the dual frequency filter schematic diagram that a kind of low energy is lost；
Fig. 8 is the dual frequency filter schematic diagram that a kind of frequency band isolation is improved；
Fig. 9 is a kind of dual frequency filter schematic diagram of miniaturization；
The EBG substrat structure schematic diagrames of the multiband filter of Figure 10 optimization designs；
Figure 11 a are the N band filter threedimensional model schematic diagrames of multiple single tape filter banks；
Figure 11 b are the top view of wave filter shown in Figure 11 a；
Figure 11 c are the bottom view of wave filter shown in Figure 11 a；
Figure 12 is EBG substrat structure schematic diagram of the band separation from the multiband filter that degree is improved；
Figure 13 is band separation from the multiband filter threedimensional model schematic diagram that degree is improved；
A kind of threedimensional model schematic diagram for the tunable double frequency-band EBG wave filters of miniaturization that Figure 14 a realize for the present invention；
Figure 14 b and Figure 14 c are the bottom view of resonator different structure in Figure 14 a；
Figure 15 a are the threedimensional model schematic diagram of the wave filter of built-in capacitor in EBG substrates；
Figure 15 b are profile of Figure 15 a median filters on the basis of 15b-15b lines；
Figure 15 c are the bottom view of Figure 15 a median filters；
Micro- view at the top of Fig. 2 a median filters that Figure 16 a realize for processing；
The micro- view in Fig. 2 a median filters bottom that Figure 16 b realize for processing；
Figure 17 is the Q value changes curves of ATC600L series capacitors at different frequencies；
Figure 18 is the emulation in Figure 16 a with wave filter shown in Figure 16 b and test S parameter comparison diagram；
Figure 19 is the emulation in Figure 16 a with wave filter shown in Figure 16 b and test insertion loss and return loss comparison diagram
And ATC series capacitors are in the corresponding Q values of different frequent points；
Figure 20 is S parameter schematic diagram obtained by Figure 16 a are tested in different capacitances from wave filter shown in Figure 16 b；
Figure 21 is that centre frequencies of Figure 16 a from Figure 16 b median filters in different capacitances changes line chart；
The micro- view in top of dual frequency filter in Figure 14 a that Figure 22 a realize for processing；
The micro- view in bottom of dual frequency filter in Figure 14 a that Figure 22 b realize for processing；
Figure 23 is emulation and the test S parameter comparison diagram of wave filter shown in Figure 22 a and Figure 22 b；
It is noted that in figures listed above, same or similar label represents same or like from beginning to end
Element or with similar or similar functions elements.Described embodiment is a part of exemplary implementation of the present invention
Example, rather than whole embodiments, it is intended to for explaining the present invention, and it is not intended that the limitation of the present invention.Based on the present invention
Embodiment, the every other embodiment that those of ordinary skill in the art are obtained under the premise of creative work is not made,
Belong to the scope of protection of the invention.
Embodiment
The present invention is to provide the cavity resonator based on EBG substrates and wave filter, including by a series of resonator/filtering
The outside control network that device working frequency control element is constituted.Further provide for a kind of double frequency-band band logical based on EBG substrates
Wave filter, including two or more single tape bandpass filters and CSET.
Fig. 1 a show a kind of threedimensional model schematic diagram of cavity resonator/wave filter 100, including are built directly in EBG
Built-in capacitor 110 in substrate；
Fig. 1 b, Fig. 1 c and Fig. 1 d are respectively the profile of wave filter 100, top view and bottom view shown in Fig. 1 a；
Embodiments in accordance with the present invention, the cavity resonator/wave filter 100 generally includes middle dielectric layer 102, top layer gold
Belong to plate 104 and bottom metal 106.Metal column between dielectric layer 102, top-level metallic plate 104 and underlying metal plate 106
108 constitute periodic lattice structure.The wave filter 100 further comprises built-in capacitor 110a and 110b.Built-in capacitor
110a and 110b includes thin layer of dielectric material 120 and bottom electrode 122.The metal column 108 for constituting periodic lattice structure is embedded in
Dielectric layer 102 and connect top-level metallic plate 104 and underlying metal plate 106.Periodic lattice structure (metal column 108) and top
Layer 104 determines resonant cavity elementary structure with underlying metal plate 106.By built-in element 110a and 110b introduce controllable capacitive or
It is inductive coupled.CPW is designed on the top-level metallic plate 104 of resonator with slot line structure, realizes input and output energy coupling.
A kind of threedimensional model schematic diagram for tunable optic filter 200 that Fig. 2 a provide for the present invention.The tunable optic filter
200 have similar structure to the wave filter in Fig. 1 a, but the difference is that the tunable optic filter 200 has outside control
Element, and wave filter 100 has built-in capacitor 100a and 100b.
Fig. 2 b are the bottom view of wave filter shown in Fig. 2 a；Fig. 2 c and 2d be by three outside tuned cells constitute can
The bottom view of tuning filtering device.
Embodiments in accordance with the present invention, tunable optic filter 200 include middle dielectric layer 202, top-level metallic plate 204 with
Bottom metal 206.Metal column 208 between dielectric layer 202, top-level metallic plate 204 and underlying metal plate 206 constitutes week
The lattice structure of phase property.Wave filter 200 further comprises outward element 202a-d, and is introduced by these outward elements 202a-d
Controllable capacitive is inductive coupled.The embedding medium of metal column 208 layer 202 of periodic lattice structure is constituted, and connects top layer gold
Belong to plate 204 and underlying metal plate 206.The wave filter 200 further also includes input port 212 and output port 214.
Above-described outward element 202a-d can be capacitor, inductor, PIN diode, varactor or
It is the combination of above different elements.Outward element can be capacitor and the inductor of discrete or two or more
Discrete inductor forms (tunable optic filter for being operated in specific frequency) with capacitor bank.Fig. 2 b show bias
Network 216 is controlled, wherein each outside control network includes two discretes element 202a-202c and 202b-202d, by adding
Bias to adjust varactor or PIN diode capacitance.It is each outer in bias voltage control network 216 shown in Fig. 2 c and 2d
Portion's control network includes three discretes element 202a-202b-202e and 202c-202d-202f, and change is adjusted by biasing
Hold diode or PIN diode capacitance values.
Fig. 3, which show the tuning circuit structure 300 combined by multiple element, includes lumped capacitor, lumped inductance
Device, built-in capacitor, PIN diode, varactor is switched with frequency tuning.As shown in figure 3, outside control network or tuning
Circuit structure 300 may include the controlling switch 310 with lumped capacitor 302, lumped inductor 304, PIN diode 306 with
Varactor forms different combinations.Special frequency channel or restructural can be operated in by designing these tuned cells to realize
Multi-band tunable wave filter.
According to another embodiment of the invention, a kind of controllable cavity resonator/wave filter includes input and output energy coupling
Structure, cavity body structure and controllable reactance structure.Middle dielectric layer, top-level metallic plate, the gold between underlying metal plate and metallic plate
Belong to the basic structure that post array constitutes resonator.CPW and the line of rabbet joint design on top-level metallic plate in resonator to realize input
Export energy coupling.Controllable reactance structure is made up of outward element and connected with cavity resonator structure.Or, the reactive structure also may be used
It is made up of built-in element.The reactive structure is connected by a circular metal plate with resonator, will by a hollow shading ring
Circular metal plate is kept apart with the outer metal of ring, and in resonator a metal column is connected with this circular metal plate, and plays resistance
Anti- effect.Realize that the outward element of reaction is also connected with this circular metal plate.Either built-in element or external
Element can realize the control to the reactance between first reactance and second reactance.Such as Fig. 1 a-d, Fig. 2 a-d and Fig. 3
Shown, the working frequency of cavity body filter is together decided on by reactance with impedance.
Another embodiment of the present invention is controllable cavity resonator/wave filter, including middle dielectric layer, hat-shaped structure with
And capacitive or inductive element.Part I in this hat-shaped structure is kept apart with Part II by a hollow isolation channel, by gold
Dielectric layer is connected by category post with Part I.Capacitive and inductive load element can be lamped elements, built-in element or
A series of tuned cells being at least partly welded on groove (such as shown in Fig. 1 a-d, 2a-d and Fig. 3).
It is below the embodiment of EBG double band bandpass filters of the invention：
Present invention also offers a dual frequency filter based on EBG substrates, one group is passed through by two single tape wave filters
CSET is combined.Biobelt EBG wave filters are realized based on two layers of PCB technology, two of which single tape wave filter base
In Fig. 1 a-d, Fig. 2 a-d with designed by wave filter shown in Fig. 3.Biobelt EBG wave filters are selective by improving working frequency,
Isolation and the problems such as size between passband, realizes expected performance.Compared with respectively accounting for the substrate of half, two single tape wave filters lead to
Cross shared EBG substrates, can all store more energy of electromagnetic fields (there is higher Q values).In addition, two groups of CSETs draw
Enter to make the design non-interference of single filter structure., can accurate adjustment wave filter by tuning corresponding capacitor capacitance
The working frequency of each passband.The dual frequency filter of the present invention has the size smaller than two single tape wave filters, and can work
Make in different Frequency points, and make the performance of single passband unaffected.
The controllable multi-frequency band filter of the present invention includes input and output energy coupling structure, controllable reactance structure and optimization
EBG substrat structures.The EBG substrates resonator structure 400 of optimization is as shown in Fig. 4 a-b.
Fig. 4 a are the structural representation of embodiments of the invention resonator 400.Fig. 4 b are the humorous of the resonator 400 shown in Fig. 4 a
Shake the enlarged drawing of unit.
The resonator structure 400 includes middle dielectric layer 404, metal column 402, top metal plate 408 and bottom metal
406.Wherein, reactive structure is made up of the lamped element 410a and 410b being connected with resonator 400, and the reactance value of lamped element is determined
Determine the working frequency of resonator 400.It is worthy of note that, 402a-f points of metal column shown in Fig. 4 a is A classes and B classes.A eka-golds
Category post is connected with reactive structure, and B metalloids post is not connected then with reactive structure.
Fig. 5 show the structural representation of single tape wave filter 500 of the present invention, by two adjacent resonators 502 and 504
Constituted.The two resonators share same row metal column 506 and with identical reactance value, wave filter 500 is operated in spy
Determine frequency.The part 508 marked in the wave filter 500 by cross spider shade is that first resonator 502 stores magnetic field energy
Effective substrate.The area increase of dash area, the magnetic field energy stored by first resonator 502 just increases therewith.
Fig. 6 is a kind of schematic diagram of dual frequency filter 600 of the present invention.The dual frequency filter include two it is adjacent
Single tape wave filter 602 and 604.Wave filter 600 includes top-level metallic plate 608, underlying metal plate 612, input port 610, output
Port 614 and metal column 616.By adjusting corresponding reactance value, the dual frequency filter 600 can be operated in two it is customizable
Frequency band.
Fig. 7 is the structural representation of dual frequency filter 700 that a kind of energy loss reduces.By the number for increasing metal column
Amount, makes the dual frequency filter 700 have smaller energy loss.The wave filter 700 includes two adjacent single tape wave filters
702 and 704, underlying metal plate 706, input port 710, output port 712 and top-level metallic plate 714.Dotted line table in Fig. 7
Bright wave filter 700 introduces more metal columns 708 by wave filter 600 and formed.
Fig. 8 is a kind of band separation from the dual frequency filter 800 that degree is improved, including two adjacent wave filters 802 with
804, underlying metal plate 806, top-level metallic plate 808, metal column 810, input port 812 and output port 814.By at two
One group of metal column 816 is introduced between single tape wave filter 802 and 804 to improve band separation from degree.It is worthy of note that, Ke Yiyin
Enter more metal columns further to improve the isolation between frequency band.
Fig. 9 is a kind of dual frequency filter 900 of miniaturization, including top-level metallic plate 910, underlying metal plate 912, gold
Belong to post 918, input port 914 and output port 916.The wave filter is by four common group of resonators 902,904,906 and 908
Into wherein resonator 902 and 904 is operated in same specific frequency, and resonator 906 and 908 is operated in another specific frequency.Pass through
Combination resonator 904 and 908 reduces the overall dimensions of wave filter 900 and improves its energy storage capability, resonator 902 and
906 also combine.Dash area 920 in Fig. 9 represents that resonator 902 stores having for magnetic field energy with 906 combining structures
Imitate substrate.In view of its size, the wave filter 900 has smaller insertion loss (IL) and higher Qu values.Pass through resonator
Shared substrat structure, the wave filter 900 has greater compactness of structure, and there is each independent single tape wave filter more preferable energy to store up
Ability is deposited, therefore the performance of the wave filter 900 is improved.
Figure 10 is a kind of structural representation of EBG substrates 1000 of optimization design, customizable for design work number of frequency bands
Multiband filter, wherein N represents the quantity of wave filter working band.Realize that single tape is filtered using two A metalloids posts
Coupling in device between two resonators.In Fig. 10, L (substrate length) is more than or equal to W (substrate width), optimal x directions
Interval S L=(L-2D)/(N+4-1), optimal y directions interval S W=(W-2D)/6, wherein D value is between 0.33*SL and 0.15*
Between SW (end value is determined by emulation).
Figure 11 a are the threedimensional model schematic diagram of N pass filters 1100, are formed by multiple single tape filter banks.Figure 11 b
It is respectively the top and bottom view of Figure 11 a median filters 1100 with Figure 11 c.The N band filters 1100 have and Figure 10 institutes
Show wave filter identical EBG substrat structures, including top-level metallic plate 1108, underlying metal plate 1110, metal column 1116, input
Mouth 1112 and output port 1114.The substrate of the N band filters 1100 is by multiple single tape wave filter groups into including first humorous
Shake device 1102, second resonator 1104, until n-th resonator 1106.By adjusting specific reactance value, the wave filter
1100 can be operated in N number of frequency band, and with customizable frequency band and the band separation improved from degree.The N band filters it is defeated
Enter to export energy conversion with coupled structure by CPW, circle open circuit groove is realized with the discrete line of rabbet joint, wherein real by circle open circuit groove
Existing CPW to the line of rabbet joint patten transformation, then the signal in the line of rabbet joint be coupled to by the discrete line of rabbet joint in EBG substrates.It is this discrete
The formula line of rabbet joint can realize the effective energy coupling between each single tape wave filter in the wave filter 1100.This energy conversion and coupling
Closing structure can also be realized by other microstrip transmission lines such as microstrip line.
Figure 12 be another N band filters the schematic diagram of EBG substrat structures 1200, the band separation with raising from
Degree.The EBG substrates 1200 include adjacent single tape wave filter and the one group of metal column shared by two single tape wave filters.Utilize
Two A metalloids posts realize the coupling in single tape wave filter between two resonators.In fig. 12, L (substrate length) is more than
Or equal to W (substrate width), optimal x directions interval S L=(L-2D)/(N+4-1), optimal y directions interval S W=(W-2D)/6,
Wherein D value (end value by emulation determine) between 0.33*SL and 0.15*SW.
Figure 13 is N band filter 1300 of the band separation from degree raising, and its EBG substrat structure is as shown in Figure 12.The N
Band filter 1300 includes top-level metallic plate 1308, underlying metal plate 1306, input port 1310, output port 1312 and gold
Belong to post 1314, combined by multiple resonators, including first resonator 1302, second resonator 1304, until n-th
Resonator 1316.
The threedimensional model schematic diagram for the tunable dual frequency filter 1400 that Figure 14 a realize for the present invention, Figure 14 b and figure
14c is the bottom view of the wave filter 1400 of different structure.The wave filter 1400 includes top metal plate 1410, bottom metal
Plate 1412, input port 1414, output port 1416, metal column 1418 and four resonators 1402,1404,1406 with
1408。
Figure 14 b are the bottom view of tunable dual frequency filter 1400, including two outward elements are as tuned cell,
The bottom view of the wave filter 1400 shown in Figure 14 c is then used as tuned cell including three outward elements.The outward element
It can be discrete element, include the various combination of lumped capacitor, lumped inductor, and two or more discrete elements
(can be achieved to be operated in the tunable resonator of specific frequency).Figure 14 b and Figure 14 c show control bias network, by change
Hold diode or PIN diode biasing to change its capacitance.
Figure 15 a are the threedimensional model schematic diagram of the wave filter 1500 of built-in capacitor in EBG substrates, Figure 15 b and 15c points
Not Wei the wave filter 1500 profile and bottom view.It is worthy of note that, wave filter 1500 and Figure 14 a shown in Figure 15 a
Shown wave filter has similar structure, the difference is that the wave filter shown in Figure 14 a has outward element, and is filtered shown in Figure 15 a
Ripple utensil has built-in capacitor 1502.
It is below the experimental result of wave filter specific embodiment of the invention：
Figure 16 a and Figure 16 b regard for by substrate of RO4350, the top and bottom of wave filter is micro- shown in Fig. 2 a of processing realization
Figure.The filter construction includes the serial lumped capacitors of ATC600L.Based on RO4350 medium substrates, the size of wave filter is
2.50*3.00*1.00mm3.Lumped capacitor is replaced using varactor, it is contemplated that can realize the tunable multiband of compact
Wave filter.
Energy conversion and the termination power of the wave filter are designed on the top-level metallic copper coin of pcb board.Electro-coppering open tubular column
As the periodic lattice structure in EBG materials, top-level metallic plate is linked together with underlying metal plate.Two hollow isolation
Ring design keeps apart metal in ring with metallic plate outside ring in bottom metal.Utilize CPW of the design on top-level metallic plate
By couple electromagnetic energy into EBG cavitys.As illustrated in fig 16 a, wave filter is realized with termination power by CPW and line of rabbet joint conversion
Broadband performance and cramped construction.The common line of rabbet joint is substituted using the rectangle line of rabbet joint in the structure, bigger characteristic impedance is made it have,
So as at its short circuit grounding, obtain larger induction reactance, energy coupling ability is improved.
The wave filter realized jointly by two coupled resonatorses and the metal column in rectangle lattice structure, its working frequency by
External harmoniousness capacitor is determined.Energy is limited in cavity by typical electro-magnetic bandgap wave filter by designing multiple rows of metal column
To realize high q-factor resonator, it is different from, one group of metal column is devised in the wave filter, energy is limited by disappearance mould
Make in cavity.The space of metal intercolumniation similarly helps to realize effective energy limitation.
Coupling between adjacent resonators is influenceed by the parameter of metal column, when the diameter of metal column is increased to by 100um
300um, the 1dB bandwidth of wave filter is reduced to 4.19% by 9.41% therewith.Wave filter shown in Figure 16 a uses 200um gold
Belong to column diameter, realize 5.7% filter bandwidht.
The performance of the wave filter is influenceed by metal loss caused by the induced-current of metal.Metal loss and wave filter volume
It is directly related, and the volume of wave filter is influenceed by the thickness of medium substrate.Therefore, the loss of wave filter is with dielectric substrate thickness
Increase and reduce.However, the thickness of medium substrate is limited by parasitic higher order mode, it can influence the band gap of wave filter
Can, and then influence the spuious scope of wave filter.Wave filter shown in Figure 16 a uses thickness for 1mm medium substrate, in order to
Other RF headend equipments are integrated.
Figure 17 is ATC600L series capacitors in the corresponding Q values of different frequency.Figure 18 is shown in Figure 16 a and Figure 16 b
The emulation of wave filter and test comparison figure.
The capacitance of capacitor shown in Figure 16 a and Figure 16 b is 3.3pf, and Q values are 91.9 when being operated in 3.5GHz, utilize mark
It is welded on EBG substrates by quasi- SMT technologies.By entering to its self-resonant frequency on ATC600L series capacitors databooks
Row analysis is calculated, and can extract out capacitor and introduce stray inductance value is 0.069nH.Wave filter is re-started after carrying it into imitative
Very, as shown in figure 18, filters to test result is 3.22GHz to acquired results as known in the figure, basically identical with simulation result.
As shown in figure 18, wave filter is measured with a width of 4.7%, less than emulation acquired results 5.7%.3.22GHz's
In center frequency points, test gained insertion loss is 3.48dB, more than simulation result 2.47dB.Measured loss is main by outer
The influence of lumped capacitor Q values is connect, by the extraction and analysis to test result, the Q values of wave filter correspondence resonator are
81.Maximum return loss of the wave filter in passband is 18.91dB.From test result, in 1GHz to 2.70GHz frequencies
In the range of rate and 3.49GHz is in 10GHz frequency ranges, filter noise suppresses to be more than 20dB.
Figure 19 show the insertion loss of wave filter shown in Figure 16 a and Figure 16 b and the emulation of return loss and tied with test
Fruit contrasts, and ATC sequence of filter is in the corresponding Q values of different frequency.As shown in figure 19, when the external 2.2pF electric capacity of wave filter
During device, its center operating frequency is 4.07GHz, and insertion loss is 2.93dB, and the result directly exists with 2.2pF capacitors
4.07GHz Q values are relevant.It is 2.07dB in insertion loss obtained by 4.07GHz emulation, the little deviation tested with simulation result is
Caused by mismachining tolerance.When the capacitance of wave filter CSET is 3.6pF, its center operating frequency is
3.00GHz, the Q values of corresponding capacitance device are 104, and measured insertion loss is 3.56dB.It is worthy of note that, measured echo
Loss is more than 10.8dB in 3.00GHz to 4.1GHz frequency ranges.
Figure 20 show Figure 16 a and the S parameter shown in Figure 16 b obtained by filters to test.As seen from the figure, CSET is worked as
Capacitance from 5.8pF be decreased to 0.2pF when, the center operating frequency of wave filter is improved to 12.0GHz by 2.6GHz, accordingly
Insertion loss is improved to 1.48dB by 3.34dB, and the return loss of wave filter is better than 8.0dB, the filtering in whole frequency band range
Device can be effectively operating in whole band limits.
Figure 21 is the filter center working frequency obtained by test, and its center operating frequency can be represented by below equation：
Wherein, ClumpedFor the capacitance of external lumped capacitor, LorigWith CorigThe respectively electricity of EBG cavitys inherently
Capacitance and inductance value.It can be seen that ω2With the capacitance (C of CSETlumped) fixed slope is presented in change curve substantially,
Illustrate the intrinsic parameter C in inside of the electro-magnetic bandgap wave filterorigIt is held essentially constant in wideband frequency range, the wave filter
Working frequency depends primarily on CSET capacitance, can make the wave filter work by selecting specific CSET capacitance
On the Frequency point that work is arbitrarily designated in 2.6-12.0GHz frequency ranges.
Figure 22 a and Figure 22 b show the top of dual frequency filter shown in Figure 14 that processing is realized by substrate of RO4350
With the micro- view in bottom.The wave filter uses dielectric constant 3.66, and thickness is 1.524mm, and loss tangent value is 0.004 RO4350
Substrate is processed.Hollow metal post, top-level metallic plate and underlying metal plate are realized using traditional PCB technology.The filtering
Device makes full use of the characteristic of its size small (0.5mm*1.0mm) and high q-factor using the serial lumped capacitors of ATC600L0402.
The dual frequency filter that the processing is realized includes the external lumped capacitor schematic diagram and its equivalent LC circuits of amplification
Model.The dual frequency filter is made up of two single tape wave filters, wherein each single tape wave filter is made up of two resonators.
First single tape wave filter is constituted by first with second resonator, and two resonators connect capacitance identical capacitor, work
Make in same frequency point.Another working band of dual frequency filter is determined by the 3rd with the 4th resonator.Above institute
State four resonators and share same EBG substrates, and do not influence each other and disturb between resonator.By the way that two single tape are filtered
Device merges, and not only increases the performance of the dual frequency filter, equally reduces the size of the dual frequency filter.
Emulation and test result S parameter comparison diagram of the Figure 23 for the wave filter, it can be seen that the wave filter has bilateral
Band, the center frequency point of first passband is 2.3GHz, and the center frequency point of second passband is 4.1GHz.In the 1dB of two passbands
Bandwidth is respectively 2.3% and 2.5%.The insertion loss of heart frequency is respectively 2.18dB and 2.24dB in the pass-band.Test result
It has been shown that, return loss of the two band filter in two passbands is better than -14.0dB.Due to the wave filter built-in quality because
Number is limited by external lumped capacitor quality factor, therefore the wave filter natural quality factor obtained by testing is 293,
The quality factor of wave filter during much smaller than external lossless capacitor.Between test result, the two band filter passband
Band separation be better than 48.0dB.In 4.5GHz to 9.0GHz frequency ranges, the out-of-band noise of the wave filter suppresses to be better than
30dB。
The present invention wave filter have the advantages that it is numerous, one of advantage be external control element selection flexibility.
External control element shown here is lamped element, according to described above, can be with other invention examples portion control elements
It is built-in element and a series of tuned cells.Therefore, the need for according to practical application, designed multiband filter can work
In specific frequency.
For three-dimensional disappearance mould (EVA) wave filter that MEMS (MEMS) is controlled, it is necessary to complicated making with
Integrated technique carrys out these integrated wave filters.And for the wave filter of the present invention, the limitation of integrated technique is relaxed.
Because the frequency tuning range of the wave filter of the present invention is decided by external control element, and independent of the chi of through hole
Very little and height, the size of wave filter can be significantly reduced.With proposing that with large-size be 40.00*30.00* in the past
1.00mm3Wave filter compare, wave filter of the invention has smaller size, is 2.50*3.00*1.00mm3, it is periodically golden
It is 0.65mm and 0.9mm to belong to the spacing between post.The corresponding Qu values of wave filter described herein are 80 to 150.
It is integrated that the external control element that the present invention is used is that wave filter is easier to, not only as efficient system encapsulation side
Method, and with more preferable design freedom.
The outside control that the wave filter of the present invention is easily obtained using printed circuit board (PCB) (PCB) substrate of industrial standard with the market
Element processed, therefore production in enormous quantities can be realized, it is easy to other radio-frequency front-end integration of equipments, and with smaller cost of manufacture.
Compared with the planar designs such as micro-strip resonantor/wave filter, this wave filter has the resonator and broader parasitism of higher Q values miscellaneous
Dissipate scope.
The wave filter of the present invention need not change the periodic lattice structure of EBG substrates, therefore not limited by working band
System.Due to utilizing EBG substrates and external control element, this wave filter can realize wider frequency range.
The band separation of the multiband filter of the present invention is better than 48dB from degree, with smaller size, can be operated in not
With frequency and the performance of single passband will not influence each other.
The foregoing is only a specific embodiment of the invention, but protection scope of the present invention is not limited thereto, any
Those skilled in the art the invention discloses technical scope in, the change and replacement that can be readily occurred in should all be covered
Within protection scope of the present invention.Therefore, protection scope of the present invention should be based on the protection scope of the described claims.
Claims (9)
1. a kind of tunable electro-magnetic bandgap band-pass resonator/wave filter, it is characterised in that：Including EBG resonators, energy coupling knot
Structure and controllable reactance structure.
The EBG resonators include middle dielectric layer, top-level metallic plate, the metal column of underlying metal plate and periodic arrangement.
The controllable reactance includes one or more CSETs, inductor, PIN diode or varactor and built-in
Tuned cell.
2. tunable electro-magnetic bandgap band-pass resonator/wave filter according to claim 1, it is characterised in that：The cycle
Property metal column insertion middle dielectric layer in constitute periodicity EBG substrates, and be connected with top-level metallic plate and underlying metal plate.
3. tunable electro-magnetic bandgap band-pass resonator/wave filter according to claim 1, it is characterised in that：The energy
Coupled structure is designed on top-level metallic plate, and the input and output for realizing energy by co-planar waveguide-line of rabbet joint energy converting structure are coupled.
4. tunable electro-magnetic bandgap band-pass resonator/wave filter according to claim 1, it is characterised in that：It is described controllable
Reactive structure includes a kind of attachment structure, and the hollow shading ring on underlying metal plate keeps apart metal in ring with metal outside ring
Come, metal is connected by metal column with resonator cavity body structure in ring, and outward element is connected with metal in ring.
5. tunable electro-magnetic bandgap band-pass resonator/wave filter according to claim 1, it is characterised in that：The metal
The impedance of post is the function for the metal column parameter being connected with metal in ring, and the value of the controllable reactance is built-in element or external member
The function of part value.
6. tunable electro-magnetic bandgap band-pass resonator/wave filter according to claim 1, it is characterised in that：It is described controllable
Reactive structure further comprises a kind of cap-like structure and a series of electric capacity and inductance control element.
7. tunable electro-magnetic bandgap band-pass resonator/wave filter according to claim 6, it is characterised in that：The hat shape
Structure includes the Part I and Part II kept apart by hollow isolation channel, and Part I passes through metal column and middle dielectric layer
It is connected.
8. tunable electro-magnetic bandgap band-pass resonator/wave filter according to claim 6, it is characterised in that：The capacitive
Can be lamped element, built-in element or a series of tunings member being welded on hollow isolation channel with inductive load element
Part.
9. tunable electro-magnetic bandgap band-pass resonator/wave filter according to claim 1, it is characterised in that：The EBG chambers
Body structure further comprises the controllable reactance structure being located in middle dielectric layer.
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108648978A (en) * | 2018-05-25 | 2018-10-12 | 东南大学 | A kind of micro-strip meander-line slow wave structure based on period metal cylinder |
| CN108808183A (en) * | 2018-06-08 | 2018-11-13 | 合肥工业大学 | A kind of terahertz filter based on taper metamaterial unit |
| CN109149036A (en) * | 2018-08-03 | 2019-01-04 | 深圳鲲鹏无限科技有限公司 | A kind of filter construction |
| CN109755706A (en) * | 2019-02-28 | 2019-05-14 | 江南大学 | The electromagnetism branch coupling filter of high out-of-side rejection |
| CN110098453A (en) * | 2018-01-31 | 2019-08-06 | 株式会社Kmw | Radio-frequency filter |
| CN110504945A (en) * | 2019-08-05 | 2019-11-26 | 电子科技大学 | A kind of restructural loop filtering device |
| CN111342179A (en) * | 2020-04-14 | 2020-06-26 | 南京航空航天大学 | 2.5D miniaturized electromagnetic band gap structure for microwave circuit module package |
| CN112216938A (en) * | 2020-09-11 | 2021-01-12 | 电子科技大学 | Reconfigurable filter and method for realizing 0dB cross-coupling filtering and filtering power division |
| CN114024110A (en) * | 2021-10-28 | 2022-02-08 | 江南大学 | Adjustable high-frequency electromagnetic band gap band-pass filter |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012089977A (en) * | 2010-10-18 | 2012-05-10 | Yamaha Corp | High frequency filter structure |
| CN105489988A (en) * | 2014-09-20 | 2016-04-13 | 南京理工大学 | Half-mode substrate integrated waveguide structure-based dual-passband differential bandpass filter |
-
2017
- 2017-04-06 CN CN201710219842.XA patent/CN107123844A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012089977A (en) * | 2010-10-18 | 2012-05-10 | Yamaha Corp | High frequency filter structure |
| CN105489988A (en) * | 2014-09-20 | 2016-04-13 | 南京理工大学 | Half-mode substrate integrated waveguide structure-based dual-passband differential bandpass filter |
Non-Patent Citations (1)
| Title |
|---|
| YU GUO: "A Compact Configurable EBG Filter on PCB", 《IEEE TRANSACTIONS ON COMPONENTS, PACKAGING AND MANUFACTURING TECHNOLOGY》 * |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110098453A (en) * | 2018-01-31 | 2019-08-06 | 株式会社Kmw | Radio-frequency filter |
| US11196137B2 (en) | 2018-01-31 | 2021-12-07 | Kmw Inc. | Radio frequency filter |
| CN108648978A (en) * | 2018-05-25 | 2018-10-12 | 东南大学 | A kind of micro-strip meander-line slow wave structure based on period metal cylinder |
| CN108648978B (en) * | 2018-05-25 | 2023-09-19 | 东南大学 | Microstrip meanderline slow wave structure based on periodic metal cylinder |
| CN108808183A (en) * | 2018-06-08 | 2018-11-13 | 合肥工业大学 | A kind of terahertz filter based on taper metamaterial unit |
| CN109149036A (en) * | 2018-08-03 | 2019-01-04 | 深圳鲲鹏无限科技有限公司 | A kind of filter construction |
| CN109149036B (en) * | 2018-08-03 | 2024-05-07 | 深圳鲲鹏无限科技有限公司 | Filter structure |
| CN109755706A (en) * | 2019-02-28 | 2019-05-14 | 江南大学 | The electromagnetism branch coupling filter of high out-of-side rejection |
| CN110504945B (en) * | 2019-08-05 | 2022-12-02 | 电子科技大学 | Reconfigurable annular filtering device |
| CN110504945A (en) * | 2019-08-05 | 2019-11-26 | 电子科技大学 | A kind of restructural loop filtering device |
| CN111342179A (en) * | 2020-04-14 | 2020-06-26 | 南京航空航天大学 | 2.5D miniaturized electromagnetic band gap structure for microwave circuit module package |
| CN112216938A (en) * | 2020-09-11 | 2021-01-12 | 电子科技大学 | Reconfigurable filter and method for realizing 0dB cross-coupling filtering and filtering power division |
| CN114024110B (en) * | 2021-10-28 | 2022-04-29 | 江南大学 | Adjustable high-frequency electromagnetic band gap band-pass filter |
| CN114024110A (en) * | 2021-10-28 | 2022-02-08 | 江南大学 | Adjustable high-frequency electromagnetic band gap band-pass filter |
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