CN114023711A

CN114023711A - Chip packaging structure with high copper column

Info

Publication number: CN114023711A
Application number: CN202111283108.2A
Authority: CN
Inventors: 饶跃峰
Original assignee: Shanghai Baizexin Semiconductor Technology Co ltd
Current assignee: Shanghai Baizexin Semiconductor Technology Co ltd
Priority date: 2021-11-01
Filing date: 2021-11-01
Publication date: 2022-02-08

Abstract

The invention discloses a chip packaging structure with a high copper column, and belongs to the technical field of integrated circuit packaging. The integrated copper column integrated platform comprises an integrated copper column integrated platform and a high copper column; and a plurality of high copper columns are arranged on the integrated platform, and electroplated layers are arranged at the tail ends of the high copper columns. The single and isolated copper columns are collected to the integrated copper column integration platform to be integrated into a whole, and the integrated copper column integration platform is used as a stress point for absorbing and placing equipment, so that the copper columns can be automatically used in the subsequent packaging process; the size of the copper columns is miniaturized, the positions of the copper columns are rearranged, the required fine spacing between the copper columns is achieved, a copper column array is formed, and the copper columns are fixed by the aid of the integrated copper column integration platform.

Description

Chip packaging structure with high copper column

Technical Field

The invention relates to a chip packaging structure with a high copper column, and belongs to the technical field of integrated circuit packaging.

Background

The trend in integrated circuits is to pursue more and more functions, high performance, high heat dissipation, high integration, high reliability, and low cost. The chip packaging technology plays a crucial role in the manufacturing process of the integrated circuit, and the feasibility, packaging quality and packaging reliability of the chip packaging technology directly determine whether the integrated circuit meets the design requirements and can be manufactured. The packaging process determines the structure and performance of the integrated circuit. The packaging cost is also increasing in proportion to the total cost of the integrated circuit. As the wafer process of integrated circuits is developed to the nanometer level, the number of transistors integrated on the chip is developed to a higher density, the number of input/output signal IO pins is higher and higher, the spacing of the IO pins is developed to be less than 100 μm, and the packaging technology is developed to a higher density. The copper pillar bump packaging technology has become a core technology of an advanced chip packaging technology by virtue of unique bump fine pitch advantage, good heat conduction performance, electromigration resistance, quality consistency and reliability, and is dominant to the development of the chip packaging technology towards high density and superfine pitch.

At present, the technical scheme of copper column encapsulation mainly includes two prior arts: directly using a single copper column, and packaging the single copper column into a braid mode; and (II) a laser grooving copper electroplating mode.

The defects of the prior art (I):

the prior art (one) directly uses a single copper column. The single copper column is processed singly by adopting a machining mode, surface treatment is carried out, and then a braid mode is made, so that the single copper column is convenient to use in an automatic mode. The process comprises the following main steps:

(1) preparing a copper plate and a machining die;

(2) the copper column is formed by punching and machining to obtain a single copper column with the required size;

(3) treating the surface of the copper pillar;

(4) copper post braid packing, pack single copper post in the rolling tape material, make things convenient for the automated mode of encapsulation equipment to use.

The use mode of the single copper pillar braid in the prior art (I) has the characteristics of low cost and high production rate, but is not widely used in the packaging process, and the main problems are as follows:

(1) the difficulty in processing the solder bump is large: the single copper column is not beneficial to fixing, and the difficulty of processing the soldering tin bump at the tail end of the copper column is high;

(2) the single copper columns packaged by the braids are used one by one in the packaging process, so that the production efficiency is low;

(3) the size of a single copper column is limited by the aspects of a mechanical processing method, an electronic manufacturing process and the like, the diameter of the copper column cannot be further reduced, the size is generally reduced to 200 mu m, and the continuous miniaturization is limited by the process and the application;

(4) the length of the single copper column cannot be too long, the single copper column is limited by a processing method and a copper column welding process, the single copper column is easy to topple, the position deviation is easy to occur in the welding process, and the application quality of the copper column and the customer satisfaction degree are affected.

The defects of the prior art (II):

in the prior art (II), a copper column plating technology is performed on a bonding pad on the surface of a substrate, and the implementation of the technology mainly comprises the following steps:

(1) performing laser grooving on the surface of the plastic packaging material after the plastic packaging process (molding process) is finished, ablating the plastic packaging material by utilizing a high-energy, high-precision, programmable and automatic laser beam, and processing a circular deep hole or a groove;

(2) the pretreatment such as cleaning and the like is carried out in the circular deep hole or the groove, so that the realization of an electroplating process is facilitated;

(3) and in the copper electroplating process, a copper column with a required shape and depth is electroplated in the laser deep hole or the groove.

Tmv (throughput moldvia) technology is one of the current advanced packaging technologies, and is commonly used in fan-out packaging (Fanout) processes, such as FOPOP, 2.5D, double-sided SiP, etc., which are being used by a large number of packaging factories, and has the main disadvantages:

(1) the equipment investment cost is high; the laser ablation technology has complex process and great control difficulty;

(2) the laser grooving process is that the patterns are ablated one by laser, so that the efficiency is low and the cost is high;

(3) whether the laser capability is dug to a required position in the height direction is difficult to control and detect;

(4) the laser grooving process is characterized in that the quality is related to whether the substrate is deformed or not and the height of the plastic package material. The difficulty in controlling the deformation of the substrate and the thickness change of the plastic package material is high, the quality of the depth of the laser grooving is influenced, and the subsequent copper column electroplating quality is further influenced;

(5) deep hole electroplating has process limitations, and currently, the depth-to-width ratio is generally 10: 1, the height of mass-produced copper columns is about 100 μm at most.

The TMV process for processing the copper column has the disadvantages of multiple working procedures, high quality control difficulty, the problems of bubbles, discontinuity in the electroplated copper column and the like, and the problem of reliability of a packaged chip using the process. The copper column electroplating process is restricted by the depth and width of the groove, and a high copper column cannot be manufactured, so that the development of the current chip packaging process is limited to a certain extent. Therefore, a chip package structure with a high copper pillar and a method for manufacturing the same are needed to be designed. Wherein, the high copper column refers to a copper column with a height of more than 50 μm, and the end of the copper column is provided with an electroplated metal layer for the requirements of packaging process and quality. The processing method of the high copper column can be any one of the processes of precision die casting forming, precision stamping processing, precision etching processing and precision laser processing or the matching combination of the processes.

Disclosure of Invention

Aiming at the technical problems and challenges of the prior art, the invention provides a chip packaging structure with a high copper column and a preparation method thereof. The technical scheme of the invention solves the technical problem of applying a single copper column in the packaging process, optimizes the process, quality, reliability and efficiency of batch use of the copper columns in the packaging process, and promotes batch application of the copper column structure in the chip packaging process.

The technical problem to be solved by the invention is realized by adopting the following technical scheme:

a chip packaging structure with high copper columns comprises an integrated copper column integrated platform and high copper columns (the height is 50-5000 μm);

and a plurality of high copper columns are arranged on the integrated copper column platform, and electroplated layers are arranged at the tail ends of the high copper columns.

The electroplated layer at the tail end of the high copper column comprises an electroplated nickel layer and a soldering tin layer, the electroplated nickel layer is positioned between the tail end of the high copper column and the soldering tin layer, the thickness range of the electroplated nickel layer is between 0.1 and 10 mu m, the soldering tin layer adopts pure tin or soldering tin alloy, the soldering tin alloy adopts at least one of SnPb, SnAg, SnCu, SnBi, SnAgCu and SnAgCuNi, and the thickness range of the soldering tin layer is between 1 and 100 mu m.

The cross section of the high copper column is in any one of but not limited to rectangle, circle, ellipse and regular polygon.

As a preferred example, the integrated copper pillar integrated platform adopts: firstly, a copper integrated copper column integrated platform; (II) a high copper column integrated platform with a chip; thirdly, glue curing integrated copper column integration platform; and (IV) integrating the high copper column with the carrier plate. Wherein:

the copper integrated copper column integrated platform and the high copper column are formed by adopting any one or a plurality of combined processing modes of but not limited to precision die casting processing, precision stamping processing, precision etching processing and laser precision processing. The copper column and the integrated copper column platform are made of the same material, and have the advantages of high connection strength, simple processing and high cost competitiveness.

And (II) the integrated platform with the chip and the high copper column comprises a chip body and bump bumps (bump means bumps, which is a term in the field of chips and is used for completing the assembly and interconnection of the chip and the outside) on the chip body, wherein the chip body is connected with the high copper column through the bump bumps, and the high copper column is connected with the bump bumps in a welding mode. Stress between the chip and the high copper column is relieved and absorbed through bump soldering tin, and stress concentration at bump positions of the chip is reduced. According to the bump type of the chip, the integrated platform is divided into a soldermass (solder paste bump) type high copper column integrated platform and a copperpilarbmass (short copper column bump) type high copper column integrated platform. The integrated platform with the chip and the high copper column solves the process limit of electroplating bump height in the wafer bumping electroplating process, and an ultra-long bump structure is obtained; meanwhile, the connection mode of the welding process improves the stress problem of the high copper column, and is suitable for application scenes of chips elevated on the space of a packaging structure

And thirdly, the glue curing integrated copper column integrated platform is formed by curing glue curing high copper columns, and the high copper columns and the curing glue are connected into a whole.

According to different application scenes of the packaging process and different heights of the curing glue platform relative to the copper cylinder, the form of the glue curing high copper cylinder integrated platform has the following modes:

1) the curing glue fully encapsulates the whole height of the copper column: filling and encapsulating the whole height of the copper pillar by using the curing glue; the electroplated nickel layer and the soldering tin layer are outside the curing glue, and the packaging structure is suitable for application scenes without UF (ultraviolet) bottom filling or molding plastic package;

2) the height of the copper column is partially encapsulated by the curing glue: the solidified glue encapsulates a part of the height of the copper pillar, and a part of the exposed copper pillar is exposed; the packaging structure is suitable for application scenes that UF bottom filling or molding plastic packaging is needed after copper columns are integrated. The copper pillar structure is exposed on one side and exposed on two sides.

3) According to different welding modes of copper columns in the glue-cured high-copper-column integrated platform, the copper column structure with a single-side electroplated metal layer, the copper column structure with double-side electroplated metal layers and the copper column structure without an electroplated metal layer are distinguished.

And (IV) the high copper column integrated platform with the carrier plate consists of a packaging carrier plate, a carrier plate surface bonding pad and plastic packaging glue, wherein the packaging carrier plate and the high copper column are sealed by the plastic packaging glue, the high copper column is connected with the carrier plate surface bonding pad of the packaging carrier plate in a routing mode, the height of the high copper column is 50-5000 mu m, the packaging carrier plate comprises but not limited to an organic substrate, an inorganic substrate, a ceramic substrate, a metal frame and an RDL circuit layer, and the number of the packaging carrier plate layers is more than or equal to 1.

The invention has the beneficial effects that:

(1) the integrated copper column integrated platform and the high copper column structure are adopted, the high copper column is processed without a complex and high-cost electroplating process, the manufacturing method of the copper column is simplified, and the manufacturing cost can be reduced;

(2) the system integrated chip (SiP) packaging structure with the high copper column structure and an electroless plating process can be developed as a basic packaging structure, and has stable quality and high reliability;

(3) the use method of the copper column in the packaging process is optimized, the processing work of the pipelined copper column in the packaging process is separated, the copper column structure can be made in advance by the modularized packaging process, the processing time of the electroplated copper column in continuous packaging production is saved, the packaging efficiency is improved, the packaging quality level is improved by modularized automatic processing, and the chip packaging reliability is improved;

(4) based on the chip packaging structure with the high copper column, the application technology of the copper column in the packaging process can simplify the packaging flow, and the standardization and the automatic processing are easy;

(5) the single and isolated copper columns are collected to the integrated copper column integration platform to be integrated into a whole, and the integrated copper column integration platform is used as a stress point for absorbing and placing equipment, so that the copper columns can be automatically used in the subsequent packaging process;

(6) the positions of the copper columns are rearranged, the required fine spacing between the copper columns is realized, an array is formed, and then the copper columns are fixed by utilizing the integrated copper column integration platform;

(7) the tail end of the copper column is plated with nickel metal and a welding alloy material as required to meet the welding requirement of the chip packaging process;

(8) based on the chip packaging structure with the high copper column, the development of a chip packaging technology can be promoted, a high copper column integrated platform is provided, and a basic packaging structure is provided for advanced packaging processes such as 2.5D, 3D, SiP and FO packaging;

(9) the present copper pillar structures are suitable for use including, but not limited to: the semiconductor packaging process, the wafer process and the common electronic manufacturing process, such as communication electronics, medical electronics, automotive electronics, aerospace electronics and the like, are widely applied.

Drawings

Fig. 1 is a schematic structural diagram of an integrated platform of embodiment 1, which uses integrated copper high copper columns;

FIG. 2 is a schematic view showing the structure of the copper plate material according to example 1;

FIG. 3 is a schematic view showing the structure of the copper plate plated in example 1;

FIG. 4 is a schematic structural view after laser cutting is performed in example 1;

FIG. 5 is a schematic view showing a structure for reflow welding, cleaning and single dicing in example 1;

fig. 6 is a schematic structural view of a wire bonding package carrier in embodiment 2;

FIG. 7 is a schematic structural view of wire bonding in example 2;

fig. 8 is a schematic structural diagram of plastic packaging of the copper pillar in embodiment 2;

FIG. 9 is a schematic view showing the structure of the flat grinding, electroplating and pre-flux coating in example 2;

FIG. 10 is a schematic view showing the structure of a carrier and a chip with short copper pillars in example 2;

FIG. 11 is a schematic structural view of the chip bonding with short copper pillars according to example 2;

FIG. 12 is a schematic view of a structure of removing an adhesive package of a chip with solder bumps according to embodiment 2;

FIG. 13 is a schematic view of the structure of a carrier and a chip with solder bumps of example 2;

FIG. 14 is a schematic view of a solder bumped die bonding configuration of example 2;

FIG. 15 is a schematic structural view of a solder bump-attached chip de-encapsulant in accordance with embodiment 2;

FIG. 16 is a schematic diagram showing a pre-cut structure of the copper plate according to example 3;

FIG. 17 is a schematic structural view of a glue seal at the bottom of a copper plate in example 3;

FIG. 18 is a schematic structural view of a laser-cut copper pillar according to example 3;

FIG. 19 is a schematic view of a structure of single division in example 3;

FIG. 20 is a schematic structural view of the secondary adhesive sealing in embodiment 3;

FIG. 21 is a schematic view showing a structure of flat grinding and electroplating in example 3;

FIG. 22 is a schematic view showing a reflow soldering and cleaning in example 3;

FIG. 23 is a schematic structural view of removing a molding compound in embodiment 3;

fig. 24 is a schematic structural view of a wire bonding package carrier in embodiment 4;

FIG. 25 is a schematic diagram of wire bonding structure in accordance with embodiment 4;

fig. 26 is a schematic structural view of plastic packaging of copper pillars according to embodiment 4;

FIG. 27 is a schematic view showing a structure of flat grinding and plating at both ends in example 4;

FIG. 28 is a schematic view of the Reflow welding and cleaning in accordance with example 4;

FIG. 29 is a schematic structural view of the embodiment 4 with the upper half of the plastic material reserved;

FIG. 30 is a schematic view showing a single-chip cutting structure after the upper plastic material is retained in the embodiment 4;

FIG. 31 is a schematic view of the embodiment 4 with the middle plastic material retained;

FIG. 32 is a schematic view of a single cutting operation after the middle plastic material is retained in the middle of the plastic film in example 4;

fig. 33 is a schematic structural view of a wire bonding package carrier in accordance with embodiment 5;

FIG. 34 is a schematic structural view of wire bonding in accordance with embodiment 5;

FIG. 35 is a schematic structural diagram of plastic encapsulation of copper pillars according to embodiment 5;

FIG. 36 is a schematic view showing the upper end flat grinding and plating structure in example 5;

FIG. 37 is a schematic view showing the structure of Reflow welding and cleaning in example 5;

FIG. 38 is a schematic view of the embodiment 5 with the lower portion of the plastic material retained;

FIG. 39 is a schematic view of a single cutting operation after the lower portion of the plastic material is retained in the embodiment 5.

In the figure: the high copper column comprises a high copper column 1, a copper wire 101, a welding spot 102, an electroplated nickel layer 2, a soldering tin layer 3, a copper integrated high copper column integrated platform 4, a copper plate 401, a cutting groove 402, a routing packaging carrier plate 5, a bonding pad 501, a plastic package material 6, soldering flux 7, a carrier 8, a chip 9, a short copper column 901, a soldering tin bump 902, a container 10 and glue 11.

Detailed Description

In order to make the technical means, the original characteristics, the achieved purpose and the efficacy of the invention easily understood, the invention is further described with reference to the following embodiments.

Embodiment 1. Integrated copper column integration platform adopts copper integrated high copper column integration platform 4

As shown in fig. 1-5, a chip package with high copper pillars has a schematic structure and a flow process. The high copper column integrated packaging structure comprises an electroless high copper column 1, an electroplated nickel layer 2, bump bumps formed at the tail ends of the high copper column 1 through a soldering tin layer 3, and the high copper column 1 is integrated on a copper integrated high copper column integrated platform 4 to form a complete packaging structure whole.

The chip packaging structure with the high copper pillar can adopt any one processing method or a combination method of the processing methods, but not limited to laser precision processing, precision die casting processing, precision stamping processing and precision etching processing. The following description will be made by taking laser cutting as an example.

As shown in fig. 2 to 5, a manufacturing process of a chip package structure with high copper pillars includes, but is not limited to, the following steps:

s1: and (4) preparing materials. Preparing a preformed copper plate 401 material, the thickness of the copper plate 401 is 50-5000 μm (or more);

s2: and (4) electroplating. Pretreating the surface of the preformed copper plate 401; then, electroplating of the metal layer is performed: an electroplated nickel layer 2 and a solder layer 3. The soldering tin layer 3 is used as a welding alloy of the high copper column 1 and the surface bonding pad 501 of the packaging carrier plate, plays a role in forming a welding spot 102, and controls the integration strength and stress buffering of the high copper column 1 and the packaging carrier plate; the nickel electroplating layer 2 plays a role in metal atom diffusion retarding layer in the welding process of the high copper column 1, and the quality and reliability of the welding spot 102 are improved;

s3: and (5) laser cutting and forming. And (3) ablating the preformed copper plate 401 material by using laser beams, and engraving the high copper cylinder 1 and the copper integrated copper cylinder integrated platform. The method comprises the following steps of reserving the thickness of a copper material with a certain thickness without cutting by using laser equipment with the height accurately controlled, so that a high copper column 1 and a copper integrated copper column integrated platform are connected into a whole;

s4: flux 7 is applied, reflow soldering and cleaning. The soldering flux 7 is applied to the surface of the solder layer 3 at the tail end of the high copper column 1, and the application of the soldering flux 7 can be but is not limited to spray-coating the soldering flux 7, dipping solder paste and the like. And then, forming the soldering tin bump by adopting a Reflow Reflow soldering mode so that the copper integrated copper column integrated platform is compatible with the packaging requirements in the subsequent packaging process. Finally, cleaning residues, pollutants and the like of the soldering flux 7 on the surface of the solder bump of the high copper post 1;

s5: and (6) cutting. The cutting of the copper integrated copper column integrated platform integrated with the high copper column can be but is not limited to laser cutting, mechanical blade cutting, mechanical stamping and the like. Preferably, laser cutting is selected, and a copper integrated copper column integrated platform of a single integrated high copper column 1 is obtained after cutting;

s6: and (7) packaging and storing. The tape (tape reel) mode is selected according to the requirement, and the tape (tape reel) mode can also be a Tray mode, so that the tape can be conveniently used for bump protection, storage, transportation and packaging process automation of the high copper column 1.

Embodiment 2 the integrated copper column integration platform adopts a high copper column integration platform with a chip

As shown in fig. 6-15, a schematic diagram of a chip package structure with high copper pillars and a process flow for manufacturing the structure are shown.

A preparation process of a chip packaging structure with high copper columns comprises but is not limited to the following steps:

s1: preparing a wire bonding package carrier 5. A wire bonding package carrier board 5 is prepared, and a wire bonding process (wired) pad 501 is disposed on the surface of the carrier board. The wire bonding package carrier 5 includes, but is not limited to, an organic substrate, an inorganic substrate, a ceramic substrate, a metal frame, and an RDL circuit layer.

S2: and (5) wire bonding. The wire bonding operation is carried out on a bonding pad 501 on the surface of the wire bonding packaging carrier plate 5, a copper wire 101 (other wires can be adopted) is preferably selected, a welding spot 102 is formed between the copper wire 101 and the wire bonding carrier plate, the height of the high copper column 1 is more than 50-5000 microns, and the wire bonding adopts a vertical wire bonding process.

S3: and (5) plastic packaging of the copper column. And (3) performing plastic packaging fixing on the routing packaging carrier plate 5, the surface bonding pad 501 of the packaging carrier plate, the copper wire 101, the welding spot 102 on the carrier plate and the high copper column 1 through a plastic packaging process to form a plastic packaging material 6. The upper boundary of the plastic package material 6 is higher than the maximum height of the copper pillar 1.

S4: flat grinding, electroplating and pre-coating the soldering flux 7. And grinding the double surfaces of the high copper column 1 and the routing packaging carrier plate 5 which are plastically fixed by the plastic package material 6, and grinding off the routing packaging carrier plate 5, the bonding pad 501 and the welding spot 102. The upper surface and the lower surface of the plastic package material 6 are exposed out of the cross sections of the two ends of the high copper column 1. Then, double-sided electroplating is carried out, and an electroplated nickel layer 2 and a soldering tin layer 3 are respectively formed at two ends of the high copper column 1. In order to meet the reflow process requirements of the solder layer 3, a flux 7 is applied to the surfaces of the nickel plating layer 2 and the solder layer 3 in advance.

S5: an upper carrier 8 and an upper chip 9. One surface of the plastic-packaged high copper column 1 pre-coated with the soldering flux 7 faces to the inside of the carrier 8, grooving is carried out inside the carrier 8, the grooving depth meets the requirement of safe avoidance of the electroplated nickel layer 2 and the soldering tin layer 3, and no spatial interference occurs.

On the other surface of the molding compound 6, a flux 7 is applied. The flux 7 may be applied in, but is not limited to, the following manner: printing, spot coating, spraying, scribing, and printing solder paste.

Then, a high-speed, high-precision and automatic chip mounter is used to suck and mount the chip 9 to the corresponding position of the copper pillar pad 501, and the chip 9 may be a chip 9 with a short copper pillar 901bump structure or a chip 9 with a solder bump 902.

The soldering flux 7 plays a role in temporarily fixing the chip 9 before the chip 9reflow soldering, so that the position of the chip 9 is not deviated; the welding process has the effect of helping welding, so that the chip 9 has a good welding effect and is integrated with the high copper column 1.

S6: reflow welding and cleaning. Reflow Reflow soldering is carried out on a system formed by the chip 9 with the flux 7 precoated and the short copper column 901bump structure or the chip 9 with the soldermass soldering tin bump 902, so that the integration of the chip 9 and the high copper column 1 in a soldering mode is realized; the soldering tin layer 3 forms an arc bump, which is beneficial to the use of the high copper column integrated packaging platform with the chip 9 in the subsequent packaging process. Finally, cleaning residues, pollutants and the like of the soldering tin bump surface scaling powder 7 of the high copper column 1;

s7: removing the plastic package material 6

By utilizing the selective cutting characteristic of a laser light source, the organic plastic packaging material 6 is selectively ablated, and the high copper column 1, the electroplated nickel layer 2 and the soldering tin layer 3 are reserved. And selectively ablating the plastic package material 6 around the high copper pillar 1 by using laser equipment with the height capable of being accurately controlled without affecting the surface of the chip 9.

S8: cutting of

The cutting mode of the integrated tape chip 9 high copper column integrated packaging platform can be but is not limited to laser cutting, mechanical blade cutting and the like. Preferably selecting a laser cutting mode, and obtaining a single high copper column 1 integrated packaging platform with the chip 9 after cutting;

s9: and (7) packaging and storing. The tape (tape reel) mode is selected according to the requirement, and the tape (tape reel) mode can also be a Tray mode, so that the tape can be conveniently used for bump protection, storage, transportation and packaging process automation of the high copper column 1.

Embodiment 3 integration copper post integration platform adopts gluey solidification high copper post integration platform

The glue-cured high-copper-column integrated packaging platform 4 is made of curing glue, and the plurality of high-copper columns 1 are bonded and cured through the curing glue.

As shown in fig. 16-23, a schematic diagram of a chip package structure with high copper pillars and a flow chart of a manufacturing process of the structure are shown.

s2: laser pre-cutting. The pre-cut is made on one side of the copper plate 401 using a laser device whose height can be precisely controlled to form the cutting grooves 402 having a depth of 10-200 μm.

S3: and pre-cutting the copper column glue seal. The laser-cut groove 402 is fixed downward in a container 10, and the container 10 is filled with glue 11 to fix the material of the copper plate 401.

S4: and (5) laser cutting. By using laser equipment with accurately controllable height, programmable and high-precision cutting is carried out, the copper plate 401 material is cut through from the surface of the copper plate 401 material along the position of the laser pre-cutting groove 402, and a plurality of independent high copper columns 1 are obtained.

S5: and (6) cutting. This step is an optional step. And (5) fixing the structure of the high copper column 1 by the glue seal completed in the step S4, and cutting. The cutting may be, but is not limited to, laser cutting, mechanical blade cutting, mechanical stamping, and the like. As a preferred example, laser cutting is selected, and a single glue 11 high copper column 1 integrated packaging platform is obtained after cutting;

s6: and (7) performing secondary glue sealing. And (4) performing second filling and curing of the glue 11 on the glue 11 surface of the glue-sealed and fixed high copper pillar 1 structure finished in the step (S4) to finish covering type filling and fixing of the high copper pillar 1.

S7: and (4) flat grinding and electroplating a metal layer. And (3) carrying out surface grinding on the structure of the high copper column 1 packaged and fixed by the glue 11 to expose the cross section of the high copper column 1 and the surface of the glue 11. Then, electroplating is performed on the cross section of the high copper column 1 to form an electroplated nickel layer 2 and a soldering tin layer 3.

S8: flux 7 is applied, reflow soldering and cleaning. The soldering flux 7 is applied to the surface of the solder layer 3 at the tail end of the high copper column 1, and the application of the soldering flux 7 can be but is not limited to spray-coating the soldering flux 7, dipping solder paste and the like. Then, the formation of the solder bump222 is realized by adopting a Reflow soldering manner, so that the high copper pillar integrated platform is compatible with the packaging requirements in the subsequent packaging process. Finally, cleaning residues, pollutants and the like of the soldering flux 7 on the surface of the solder bump222 of the high copper pillar 1;

s9: removing the plastic package material 6

And (3) ablating the sealing adhesive by using laser cutting equipment with the lifting height capable of being accurately controlled, reserving the molding adhesive, and exposing the high copper column 1.

S10: and (6) cutting. The cutting method may be, but is not limited to, laser cutting, mechanical blade cutting, mechanical stamping, and the like. As a preferred example, laser cutting is selected, and a single glue 11 high copper column 1 integrated packaging platform is obtained after cutting;

s11: and (7) packaging and storing. The tape (tape reel) mode is selected according to the requirement, and the tape (tape reel) mode can also be a Tray mode, so that the tape can be conveniently used for bump protection, storage, transportation and packaging process automation of the high copper column 1.

Embodiment 4 integration copper post integration platform adopts gluey solidification high copper post integration platform

As shown in fig. 24-32, a schematic diagram of a chip package structure with high copper pillars and a process flow for manufacturing the structure are shown.

The chip packaging structure with the high copper pillar can adopt any one processing method or a combination method of the processing methods, but not limited to laser precision processing, precision die casting processing, precision stamping processing and precision etching processing. As a preferred example, laser cutting processing is exemplified.

S2: and (5) wire bonding. The wire bonding operation is performed on the bonding pad 501 on the surface of the wire bonding packaging carrier plate 5, as a preferred example, a copper wire 101 is selected, a welding spot 102 is formed between the copper wire 101 and the wire bonding carrier plate, the height of the high copper pillar 1 is more than 50-5000 μm, and the wire bonding adopts a vertical wire bonding process.

S3: and (5) plastic packaging the high copper column 1. And (3) performing plastic packaging and fixing on the routing packaging carrier plate 5, the surface bonding pad 501 of the packaging carrier plate, the copper wire 101, the carrier plate welding point and the copper column through a plastic packaging process. The upper boundary of the plastic package material 6 is higher than the maximum value of the height of the copper column.

S4: and (4) flat grinding and electroplating. And grinding the two sides of the high copper column 1 and the packaging carrier plate structure which are plastically fixed by the plastic package material 6, and grinding the packaging carrier plate, the bonding pad 501 and the routing welding point 102. The upper surface and the lower surface of the plastic package material 6 are exposed out of the cross section of the copper column. Then, double-sided electroplating is carried out, and an electroplated nickel layer 2 and a soldering tin layer 3 are respectively formed at two ends.

S5: reflow welding and cleaning. Reflow Reflow soldering is carried out on the structure formed in the step S4, and the preparation of the double-end soldering tin bump of the high copper pillar 1 is achieved; the soldering tin layer 3 forms an arc bump, which is beneficial to the use of the high copper column integrated packaging platform with the chip in the subsequent packaging process. Finally, cleaning residues, pollutants and the like of the soldering tin bump surface scaling powder 7 of the high copper column 1;

s6: laser cutting of 6 parts of plastic package material

The laser cutting equipment with the lifting height capable of being accurately controlled is used for ablating part of the curing adhesive and reserving part of the curing adhesive for fixing the high copper column 1.

The high copper column 1 and the soldering tin bump are exposed, so that compatibility of a UF (ultraviolet) filling process and a molding sealing process in a subsequent packaging process of the glue-cured high copper column integrated packaging structure is facilitated, the use performance and flexibility of the glue-cured high copper column integrated packaging structure are improved, and the requirement of the packaging process is fully met.

The glue curing integrated platform can be used as a suction and placement stress plane of an automatic glue curing high copper column integrated packaging structure.

S7: cutting of

The cutting mode of the integrated tape chip high copper column integrated packaging platform can be but is not limited to laser cutting, mechanical blade cutting and the like. As a preferred example, a laser cutting mode is selected, and a single high copper column integrated packaging platform with the chip 9 is obtained after cutting;

s8: and (7) packaging and storing. The tape (tape reel) mode is selected according to the requirement, and the tape (tape reel) mode can also be a Tray mode, so that the tape can be conveniently used for bump protection, storage, transportation and packaging process automation of the high copper column 1.

Embodiment 5 integration copper post integration platform adopts area carrier plate high copper post integration platform

As shown in fig. 33-39, a schematic diagram of a chip package structure with high copper pillars and a process flow for manufacturing the structure are shown.

In the figure: the high copper pillar 1 is fixed with the bonding pad 501 on the surface of the chip 9 package carrier by wire bonding (wire bonding) process to form the solder joint 102. The wire bonding process adopts a mature vertical wire bonding mode, and the height of a vertical line is 50-5000 mu m or more. The tail end of the high copper column 1 is provided with an electroplated nickel layer 2 and a soldering tin layer 3, the soldering tin layer 3 is used for supporting welding integration of the high copper column 1 in a chip 9 packaging process to form permanent soldering points 102 for connection, so that connection of electrical performance and mechanical performance enhancement between the high copper column 1 and a chip 9 packaging substrate are realized, and the welding quality of the high copper column 1 and the reliability of a chip 9 packaging structure are ensured. The molding compound 6 is used to further enhance the mechanical reliability of the high copper pillar 1 and the package carrier, and protect the solder joint 102 and the package carrier. The exposed part of the high copper column 1 is compatible with a UF (ultraviolet) bottom filling process and a molding plastic package process applied in a subsequent packaging process, so that the usability of the high copper column 1 integrated packaging structure is enhanced.

S2: and (5) wire bonding. The wire bonding operation is performed on the bonding pad 501 on the surface of the wire bonding packaging carrier plate 5, as a preferred example, a copper wire 101 is selected, a welding spot 102 is formed between the copper wire 101 and the wire bonding carrier plate, the height of the high copper pillar 1 is between 50 and 5000 micrometers, or more than 5000 micrometers, and the wire bonding process adopts vertical wire bonding.

S4: and (4) flat grinding and electroplating. And grinding the two sides of the high copper column 1 and the packaging carrier plate structure which are plastically fixed by the plastic package material 6, and grinding the packaging carrier plate, the bonding pad 501 and the routing welding point 102. The upper surface and the lower surface of the plastic package material 6 are exposed out of the cross section of the copper column. Then, electroplating is performed to form an electroplated nickel layer 2 and a solder layer 3.

S5: reflow welding and cleaning. Reflow Reflow soldering is carried out on the structure formed in the step S4, and the preparation of the double-end soldering tin bump of the high copper pillar 1 is achieved; the soldering tin layer 3 forms an arc bump, which is beneficial to the realization of the soldering tin process of the high copper column integrated packaging platform with the packaging carrier plate in the subsequent packaging process. Finally, cleaning residues, pollutants and the like of the soldering tin bump surface scaling powder 7 of the high copper column 1;

s6: laser cutting of 6 parts of plastic package material

By using the laser cutting equipment with the lifting height capable of being accurately controlled, a part of the thickness of the plastic sealant is ablated, and a part of the thickness is reserved, so that the welding point 102 is safely encapsulated. The plastic package material 6 with the remaining thickness is used to further enhance the mechanical reliability of the high copper pillar 1 and the package carrier, and protect the solder joint 102 and the package carrier. The exposed part of the high copper column 1 is compatible with a UF (ultraviolet) bottom filling process and a molding plastic package process applied in a subsequent packaging process, so that the usability of the high copper column 1 integrated packaging structure is enhanced.

S7: cutting of

The cutting method of the high copper pillar integrated package platform with the package carrier can be, but is not limited to, laser cutting, mechanical blade cutting and the like. As a preferred example, a laser cutting mode is selected, and a single high copper column integrated packaging platform with the chip 9 is obtained after cutting;

The foregoing illustrates and describes the principles, general features, and advantages of the present invention. It will be understood by those skilled in the art that the present invention is not limited to the embodiments described above, and that various changes and modifications may be made without departing from the spirit and scope of the invention as defined in the appended claims. The scope of the invention is defined by the appended claims and equivalents thereof.

Claims

1. A chip packaging structure with a high copper column is characterized by comprising an integrated copper column integrated platform and the high copper column;

2. The chip packaging structure with the high copper column according to claim 1, wherein the integrated copper column integration platform is any one of a copper integrated copper column integration platform, a chip-equipped high copper column integration platform, a glue-cured integrated copper column integration platform, and a carrier plate-equipped high copper column integration platform.

3. The chip packaging structure with the high copper column according to claim 2, wherein the integrated copper column platform and the high copper column are formed by any one or more combined processing methods selected from but not limited to precision mold casting, precision stamping, precision etching and laser precision processing.

4. The chip package structure with the high copper pillar according to claim 2, wherein the integrated platform with the chip and the high copper pillar comprises a chip body and bump bumps on the chip body, the chip body and the high copper pillar are connected through the bump bumps, and the high copper pillar is connected with the bump bumps by welding.

5. The chip package structure with high copper pillars of claim 2, wherein the glue-cured integrated copper pillar integrated platform is formed by curing glue-cured high copper pillars, and the plurality of high copper pillars are integrally connected with the curing glue.

6. The chip package structure with high copper columns according to claim 2, wherein the integrated platform with carrier board and high copper columns is composed of a package carrier board, carrier board surface pads, and a molding compound, the molding compound seals the package carrier board and the high copper columns, the high copper columns are connected with the carrier board surface pads of the package carrier board by wire bonding, the height of the high copper columns is 50-5000 μm, the package carrier board is composed of layers including but not limited to organic substrate, inorganic substrate, ceramic substrate, metal frame and RDL circuit, and the number of the package carrier board layers is 1 or more.

7. The chip package structure with high copper columns according to claim 1, wherein the electroplated layer at the ends of the high copper columns comprises an electroplated nickel layer and a solder layer, the electroplated nickel layer is located between the ends of the high copper columns and the solder layer, the thickness of the electroplated nickel layer is in the range of 0.1-10 μm, the solder layer is made of pure tin or solder alloy, the solder alloy is made of at least one of SnPb, SnAg, SnCu, SnBi, SnAgCu and SnAgCuNi, and the thickness of the solder layer is in the range of 1-100 μm.

8. The chip package structure with the high copper pillar according to claim 1, wherein the height of the high copper pillar is between 50 μm and 5000 μm.

9. The chip package structure with the high copper pillar as claimed in claim 1, wherein the cross-sectional shape of the high copper pillar is but not limited to any one of rectangle, circle, ellipse and regular polygon.