CN114016128A - Method for copying and growing heteroepitaxial monocrystal diamond - Google Patents
Method for copying and growing heteroepitaxial monocrystal diamond Download PDFInfo
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- CN114016128A CN114016128A CN202111228647.6A CN202111228647A CN114016128A CN 114016128 A CN114016128 A CN 114016128A CN 202111228647 A CN202111228647 A CN 202111228647A CN 114016128 A CN114016128 A CN 114016128A
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- 239000010432 diamond Substances 0.000 title claims abstract description 120
- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 108
- 238000000034 method Methods 0.000 title claims abstract description 28
- 239000013078 crystal Substances 0.000 claims abstract description 81
- 239000000758 substrate Substances 0.000 claims abstract description 66
- 230000012010 growth Effects 0.000 claims abstract description 28
- 238000004140 cleaning Methods 0.000 claims abstract description 12
- 230000010076 replication Effects 0.000 claims description 12
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 5
- 229910052593 corundum Inorganic materials 0.000 claims description 5
- 230000006911 nucleation Effects 0.000 claims description 5
- 238000010899 nucleation Methods 0.000 claims description 5
- 238000002360 preparation method Methods 0.000 claims description 5
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 5
- 239000011259 mixed solution Substances 0.000 claims description 3
- 229910017604 nitric acid Inorganic materials 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- 229910002370 SrTiO3 Inorganic materials 0.000 claims description 2
- 238000001035 drying Methods 0.000 claims description 2
- -1 (100) Si Inorganic materials 0.000 claims 1
- 230000034655 secondary growth Effects 0.000 abstract description 4
- 239000012528 membrane Substances 0.000 abstract description 3
- 230000008646 thermal stress Effects 0.000 description 4
- 229910052741 iridium Inorganic materials 0.000 description 3
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 3
- 230000035882 stress Effects 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 229910002367 SrTiO Inorganic materials 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000000861 blow drying Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
- C30B25/183—Epitaxial-layer growth characterised by the substrate being provided with a buffer layer, e.g. a lattice matching layer
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/18—Metallic material, boron or silicon on other inorganic substrates
- C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
- C23C16/0281—Deposition of sub-layers, e.g. to promote the adhesion of the main coating of metallic sub-layers
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
- C23C16/274—Diamond only using microwave discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/04—Diamond
Abstract
The invention discloses a method for copying and growing a heteroepitaxial monocrystal diamond, which comprises the steps of preparing a first Ir film layer with a crystal orientation (001) on a first heteroepitaxial substrate; preparing a first epitaxial diamond core in the (001) direction on the first surface of the first Ir film layer; epitaxially growing a first epitaxial diamond core, and forming a first single crystal diamond in a (001) direction on the first surface of the first Ir film layer to obtain a second epitaxial substrate; cleaning the second epitaxial substrate to obtain an Ir/Dianomd substrate; preparing a second epitaxial diamond core on the second surface of the first Ir membrane layer; growing the second epitaxial diamond core in MP-CVD to obtain a second single crystal diamond; the substrate and the growth layer are both single crystal diamonds and have the same thermal expansion coefficient, and the crystal quality of the single crystal diamond subjected to secondary growth can be improved by using the heteroepitaxial single crystal diamond as the substrate.
Description
Technical Field
The invention belongs to a preparation method of heteroepitaxial monocrystal diamond, and particularly relates to a replication growth method of heteroepitaxial monocrystal diamond.
Background
Diamond is a wide bandgap semiconductor with an extreme thermal conductivity of 2200W/m/K and electron mobility (electrons 4500, holes 3800 cm)2Vs) are of great importance for new quantum and high power electronics.
Due to the special mode that diamond nucleates on the Ir film, the single crystal diamond epitaxially grown on Ir has the characteristics of high nucleation density and good crystal orientation consistency, so that iridium becomes the most important plating layer substrate material for preparing single crystal diamond wafers.
Growth on iridium always means epitaxial growth of an iridium layer on another substrate. The epitaxial growth of the single crystal diamond can generate thermal stress and thermal strain with the substrate in the growth process, and particularly, the influence caused by the thermal stress is larger and larger along with the increase of the area of the hetero-epitaxial single crystal diamond, so that the quality of the hetero-epitaxial single crystal diamond can be seriously influenced.
Disclosure of Invention
The invention aims to provide a method for duplicating and growing heteroepitaxial monocrystal diamond, which is used for reducing the thermal stress and the thermal strain between the epitaxially grown monocrystal diamond and a substrate and improving the quality of the heteroepitaxial monocrystal diamond.
The invention adopts the following technical scheme: a method of heteroepitaxial single crystal diamond replication growth comprising the steps of:
preparing a first Ir film layer with the crystal orientation of (001) on a first heteroepitaxial substrate;
preparing a first epitaxial diamond core in the (001) direction on the first surface of the first Ir film layer;
epitaxially growing an epitaxial diamond core, and forming a first single crystal diamond in a (001) direction on the first surface of the first Ir film layer to obtain a second epitaxial substrate;
cleaning the second epitaxial substrate to obtain an Ir/Dianomd substrate;
preparing a second epitaxial diamond core on the second surface of the first Ir membrane layer;
growing the second epitaxial diamond core in MP-CVD to obtain a second single crystal diamond.
Further, obtaining the Ir/Dianom substrate further comprises:
and performing Ir magnetron sputtering on the second surface of the first Ir film layer.
Further, cleaning the second epitaxial substrate includes:
using H2SO4And HNO3And cleaning the second epitaxial substrate by using the mixed solution, and removing the first heteroepitaxial substrate to obtain the Ir/Dianomd substrate.
Further, the thickness of the first Ir film layer is 1 nm-1 μm.
Further, the first heteroepitaxial substrate is selected from a-direction sapphire, Si and SrTiO with (100) crystal direction3MgO or Al2O3。
Further, the first single crystal diamond and the second single crystal diamond are uniform in size.
Further, the preparation method of the first Ir film layer is a magnetron sputtering method.
Further, the first epitaxial diamond core and the second epitaxial diamond core are both prepared by adopting an enhanced bias nucleation method.
Further, before the preparing the first Ir film layer with the crystal orientation of (001) on the first heteroepitaxial substrate, the method further comprises the following steps:
and ultrasonically cleaning the first heteroepitaxial substrate and drying.
The invention has the beneficial effects that: the substrate and the growth layer are both single crystal diamonds and have the same thermal expansion coefficient, and the diamonds have extremely high thermal conductivity, so that the stress generated between the heteroepitaxial single crystal diamonds and the substrate during growth can be greatly reduced, and meanwhile, the crystal quality of the secondarily grown single crystal diamonds can be improved by using the heteroepitaxial single crystal diamonds as the substrate.
Drawings
FIG. 1 is a schematic flow diagram of a heteroepitaxial single crystal diamond replication growth method according to an embodiment of the present invention;
FIG. 2 is a representation of a single crystal first Ir (001) film at various stages in an embodiment of the present invention;
FIG. 3 is an XRD rocking graph of a first single crystal diamond and a second single crystal diamond in an example of the invention;
fig. 4 is a SEM sectional feature of upper and lower heteroepitaxial single crystal diamonds prepared in an example of the present invention (the intermediate layer is a first Ir (001) film layer).
Detailed Description
The present invention will be described in detail below with reference to the accompanying drawings and specific embodiments.
The use of diamond as a single crystal diamond heteroepitaxial substrate has significant advantages in that minimal stress strain can be achieved using diamond as a single crystal diamond heteroepitaxial substrate, however, typical single crystal diamond (e.g., high temperature high pressure process (HPHT)) as well as CVD grown single crystal diamond are too small in size, typically less than 1 inch. The preparation of the high-orientation Ir film is difficult to realize on the surface of the polycrystalline diamond, and the area of the heteroepitaxial single crystal diamond can be larger than 2 inches, so that the preparation of the single crystal diamond with the same size by taking the heteroepitaxial single crystal diamond as a substrate for epitaxial growth is a good method.
The invention discloses a method for copying and growing heteroepitaxial monocrystal diamond, which comprises the following steps as shown in figure 1: preparing a first Ir film layer with the crystal orientation of (001) on a first heteroepitaxial substrate; preparing a first epitaxial diamond core in the (001) direction on the first surface of the first Ir film layer; epitaxially growing an epitaxial diamond core, and forming a first single crystal diamond in a (001) direction on the first surface of the first Ir film layer to obtain a second epitaxial substrate; cleaning the second epitaxial substrate to obtain an Ir/Dianomd substrate; preparing a second epitaxial diamond core on the second surface of the first Ir membrane layer; and the first epitaxial diamond core and the second epitaxial diamond core are both high-orientation diamond cores, and the second epitaxial diamond core is grown in MP-CVD to obtain the second single-crystal diamond.
The substrate and the growth layer are both single crystal diamonds and have the same thermal expansion coefficient, and the diamonds have extremely high thermal conductivity, so that the stress generated between the heteroepitaxial single crystal diamonds and the substrate during growth can be greatly reduced, and meanwhile, the crystal quality of the secondarily grown single crystal diamonds can be improved by using the heteroepitaxial single crystal diamonds as the substrate.
In the invention, the first heteroepitaxial substrate selects a-direction sapphire and (100) crystal direction Si and SrTiO3MgO or Al2O3. Specifically, in this example, Al is selected2O3(11-20) as a substrate, ultrasonically cleaning the substrate with acetone, absolute ethyl alcohol and deionized water for 10 minutes, and then carrying out high-pressure N2Air blow drying (substrate size 20X 20mm used in this example)2)。
By magnetron sputtering on Al2O3And (11-20) depositing an Ir (001) film (namely the first Ir film layer) on the surface to improve the surface quality of the Ir film. The temperature of the sputtering substrate is 800 ℃, the duration time is 60 minutes, the purity of the Ir target is 99.95 percent, the Ar flow is 50sccm, the Ir deposition rate is about 2nm/min, and the thickness of the first Ir film layer is 1 nm-1 μm.
Preparing a second epitaxial diamond core on the Ir (001) surface by using a DC-CVD enhanced bias nucleation mode, applying a voltage of-350V on the Ir surface when the substrate temperature is 750 ℃, and introducing CH with the concentration of 5 percent4/H2The gas mixture, DC supply current 1.5A, duration 150 s.
Growing the obtained sample wafer in MP-CVD to obtain heteroepitaxial monocrystal diamond with growth power of 3500W, temperature of 950 deg.C, and pressure in cavity of 110torr and CH4/H240sccm and 500sccm, respectively, and 50ppm of N is introduced2And as an auxiliary growth gas, growing for about 50h to obtain a diamond substrate master plate, and taking the diamond substrate master plate as a second epitaxial substrate.
Subjecting the obtained second epitaxial substratePut into H2SO4/HNO3And cleaning in the mixed solution to remove oxide residues to obtain a clean Ir/Dianomd substrate.
And performing Ir magnetron sputtering on the Ir surface of the Ir/Diamond again to improve the surface quality of the Ir film, and the process is the same as the above.
And preparing the high-orientation Diamond core on the Ir (001) surface by using a DC-CVD enhanced bias nucleation mode on the Ir/Diamond substrate by the same process.
And growing the substrate in MP-CVD to obtain the heteroepitaxial single-crystal diamond, and realizing the reproduction of the heteroepitaxial single-crystal diamond.
By the above method, the first single crystal diamond and the second single crystal diamond obtained are uniform in size.
The invention first utilizes Ir (001)/Al2O3A substrate, heteroepitaxially growing 20 × 20 × 0.5mm on Ir surface3The FWHM of the thick single crystal diamond film of (1) 0.124 °. Then the obtained heteroepitaxial monocrystal diamond is used as a mother set to copy and grow the heteroepitaxial monocrystal diamond with the same size as the mother set on the Ir surface, and finally the heteroepitaxial monocrystal diamond with the size of 20 multiplied by 1mm is obtained3Dimension Diamond/Ir/Diamond structure thick film.
The method utilizes the heteroepitaxial single crystal diamond as the substrate to carry out secondary heteroepitaxial single crystal diamond growth, completely eliminates the thermal stress between the single crystal diamond of secondary epitaxial growth and the substrate, and the master diamond is used as the substrate, the crystal quality of the master diamond does not influence the quality of the heteroepitaxial single crystal diamond of secondary growth, and the quality of the heteroepitaxial single crystal diamond is only related to the quality of the Ir film. The FWHM of the heteroepitaxial single crystal diamond after the secondary growth was 0.058 °. The method can effectively improve the quality of the heteroepitaxial single crystal diamond and provides a new direction for the heteroepitaxial growth of the single crystal diamond.
In conclusion, the technology for preparing the single crystal diamond by taking the heteroepitaxial single crystal diamond as the substrate is realized, the heteroepitaxial single crystal diamond can realize epitaxial growth on the inch-scale oxide substrate, a large-size substrate can be provided for secondary growth of the single crystal diamond, and the consumption of the Ir target material can be saved and the cost can be reduced by utilizing the Ir film attached to the heteroepitaxial single crystal diamond.
Claims (9)
1. A method for heteroepitaxial single crystal diamond replication growth, comprising the steps of:
preparing a first Ir film layer with the crystal orientation of (001) on a first heteroepitaxial substrate;
preparing a first epitaxial diamond core in the (001) direction on the first surface of the first Ir film layer;
epitaxially growing the first epitaxial diamond core, and forming a first single crystal diamond in a (001) direction on the first surface of the first Ir film layer to obtain a second epitaxial substrate;
cleaning the second epitaxial substrate to obtain an Ir/Dianomd substrate;
preparing a second epitaxial diamond core on a second surface of the first Ir film layer;
growing the second epitaxial diamond core in MP-CVD to obtain a second single crystal diamond.
2. A method of heteroepitaxial single crystal diamond replication growth in accordance with claim 1, wherein obtaining an Ir/diamond substrate further comprises:
and performing Ir magnetron sputtering on the second surface of the first Ir film layer.
3. A method of heteroepitaxial single crystal diamond replication growth in accordance with claim 1, wherein cleaning the second epitaxial substrate comprises:
using H2SO4And HNO3And cleaning the second epitaxial substrate by using the mixed solution, and removing the first heteroepitaxial substrate to obtain the Ir/Dianomd substrate.
4. A method of heteroepitaxial single crystal diamond replication growth in accordance with claim 1, wherein the thickness of the first Ir film layer is in the range of 1nm to 1 μm.
5. As in claimA method of heteroepitaxial single crystal diamond replication growth as claimed in claim 1 wherein the first heteroepitaxial substrate is selected from a sapphire, (100) Si, SrTiO3MgO or Al2O3。
6. A method of heteroepitaxial single crystal diamond replication growth in accordance with claim 1, wherein the first single crystal diamond and the second single crystal diamond are of uniform size.
7. The method of heteroepitaxial single crystal diamond replication growth of claim 1, wherein the first Ir film layer is prepared by magnetron sputtering.
8. A heteroepitaxial single crystal diamond replication growth method according to claim 1, wherein the first and second epitaxial diamond cores are prepared by enhanced bias nucleation.
9. A heteroepitaxial single crystal diamond replication growth method according to claim 1, wherein the preparation of the first Ir film layer with a crystal orientation (001) on the first heteroepitaxial substrate further comprises:
and ultrasonically cleaning the first heteroepitaxial substrate and drying.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060203346A1 (en) * | 2005-03-14 | 2006-09-14 | Shin-Etsu Chemical Co., Ltd. | Multilayer substrate, method for producing a multilayer substrate, and device |
| CN107268076A (en) * | 2017-07-28 | 2017-10-20 | 西安交通大学 | A kind of method based on heteroepitaxial growth single-crystal diamond |
| US20200208298A1 (en) * | 2017-09-08 | 2020-07-02 | J2 Materials, Llc | Diamonds and hetero-epitaxial methods of forming diamonds |
| CN113430640A (en) * | 2021-06-23 | 2021-09-24 | 西安交通大学 | Method for preparing heteroepitaxial single crystal diamond by using Pt metal as Ir buffer layer |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060203346A1 (en) * | 2005-03-14 | 2006-09-14 | Shin-Etsu Chemical Co., Ltd. | Multilayer substrate, method for producing a multilayer substrate, and device |
| CN107268076A (en) * | 2017-07-28 | 2017-10-20 | 西安交通大学 | A kind of method based on heteroepitaxial growth single-crystal diamond |
| US20200208298A1 (en) * | 2017-09-08 | 2020-07-02 | J2 Materials, Llc | Diamonds and hetero-epitaxial methods of forming diamonds |
| CN113430640A (en) * | 2021-06-23 | 2021-09-24 | 西安交通大学 | Method for preparing heteroepitaxial single crystal diamond by using Pt metal as Ir buffer layer |
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