CN114016125B - Single crystal furnace charging method and device and storage medium - Google Patents
Single crystal furnace charging method and device and storage medium Download PDFInfo
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- CN114016125B CN114016125B CN202111325944.2A CN202111325944A CN114016125B CN 114016125 B CN114016125 B CN 114016125B CN 202111325944 A CN202111325944 A CN 202111325944A CN 114016125 B CN114016125 B CN 114016125B
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/002—Continuous growth
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/005—Simultaneous pulling of more than one crystal
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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Abstract
The application discloses a single crystal furnace charging method, a single crystal furnace charging device and a storage medium, and relates to the technical field of production and manufacturing, wherein the method comprises the following steps: acquiring configuration information of each single crystal furnace in a crystal pulling workshop; dividing each single crystal furnace into at least two groups according to the configuration information; for each group, configuring feeders for the group according to the total loading amount of each single crystal furnace in the group and the loading capacity of each feeder; and feeding the single crystal furnaces of each group through a feeder configured for each group. The problem of among the prior art can lead to many single crystal growing furnaces can't receive silicon raw materials and then influence single crystal growing furnace production in a certain time when the charging machine breaks down is solved, reached and to distribute the charging machine as required to feed in raw material for each single crystal growing furnace through the charging machine of distribution, eliminate the effect to the influence of single crystal growing furnace production.
Description
Technical Field
The invention relates to a single crystal furnace charging method, a single crystal furnace charging device and a storage medium, and belongs to the technical field of production and manufacturing.
Background
With the rapid development of the photovoltaic industry, the demand for single crystal silicon rods is rapidly increased, hundreds or even thousands of single crystal furnaces are frequently produced in a crystal pulling workshop, and in order to ensure that each single crystal furnace can continuously work, the single crystal furnaces are required to be charged on time. Under the traditional single crystal furnace feeding method, each single crystal furnace is provided with one feeder, but in the single crystal furnace material melting process, the situation that the utilization rate of the feeders is low is caused by long idle time of the feeders, the production cost is increased, and especially the situation of simultaneous production of multiple single crystal furnaces.
In the existing scheme, in order to reduce the production cost, the common method comprises the following steps: the method comprises the steps of configuring a plurality of single crystal furnaces for one feeder, obtaining the next single crystal furnace to be fed after feeding for one single crystal furnace, driving the feeder to the position of the single crystal furnace to be fed by a driver, then hermetically butting a discharge port of the feeder of the single crystal furnace with a feed port of the single crystal furnace to be fed, controlling the feeder to feed materials to the single crystal furnace, and finally circularly executing the step of determining the next single crystal furnace to be fed.
The method can achieve the aims of improving the utilization rate of the feeder and reducing the production cost to a certain extent. However, in the production process of the single crystal furnace, each feeder is used as a pivot node, and once a fault occurs, a plurality of single crystal furnaces related to the feeder cannot receive silicon raw materials within a certain time, so that the production of the single crystal furnaces is influenced.
Disclosure of Invention
The invention aims to provide a single crystal furnace charging method, a single crystal furnace charging device and a storage medium, which are used for solving the problems in the prior art.
In order to achieve the purpose, the invention provides the following technical scheme:
according to a first aspect, the embodiment of the invention provides a single crystal furnace charging method, which comprises the following steps:
acquiring configuration information of each single crystal furnace in a crystal pulling workshop;
dividing the single crystal furnaces into at least two groups according to the configuration information;
for each group, allocating feeders for the group according to the total charge amount of each single crystal furnace in the group and the load capacity of each feeder;
and feeding the single crystal furnaces of each group through a feeder configured for each group.
Optionally, the dividing the single crystal furnaces into at least two groups according to the configuration information includes:
dividing each single crystal furnace into Q types according to the type of the silicon raw material required to be added in each single crystal furnace and/or the diameter of the single crystal rod required to be pulled by each single crystal furnace in the configuration information, wherein Q is a positive integer;
for each class, dividing each single crystal furnace of the class into k groups according to the position of each single crystal furnace in the configuration information, wherein k is an integer greater than 1.
Optionally, the dividing the classified single crystal furnaces into k groups according to the positions of the single crystal furnaces in the configuration information includes:
randomly selecting k single crystal furnaces from the single crystal furnaces as central single crystal furnaces;
calculating the distance between each classified single crystal furnace and each central single crystal furnace according to the position of each single crystal furnace;
dividing each single crystal furnace into the same groups as the central single crystal furnace closest to the central single crystal furnace;
and if the preset conditions are not met, the step of randomly selecting k single crystal furnaces from the single crystal furnaces as the central single crystal furnaces is executed again, otherwise, grouping conditions are output, and the preset conditions comprise that the iteration times reach the preset times and/or the randomly selected central single crystal furnaces are unchanged.
Optionally, the configuring the feeders for the grouping according to the total charge amount of each single crystal furnace in the grouping and the load capacity of each feeder includes:
the number of configured feeders is as follows:
wherein N is the number of configured feeders, N is a positive integer, and w F The loading capacity of a single feeder, W s The total charge of all single crystal furnaces in the group.
Optionally, the charging of the single crystal furnaces of each group is performed by a charging machine configured for each group, and includes:
initializing the charging marks of the single crystal furnaces to be not added to the charging task;
acquiring a feeder list at intervals of preset time, wherein all feeders in the feeder list are sorted in an ascending order according to the number of distributed feeding tasks;
for each single crystal furnace, acquiring a charging mark of the single crystal furnace and charging weight to be charged;
if the feeding mark indicates that the single crystal furnace is not added to the feeding task and the feeding weight to be fed is not 0, selecting a feeder at the head position from the feeder list, adding the single crystal furnace to the task list of the selected feeder, updating the feeding mark of the single crystal furnace, and executing the step of obtaining the feeder list at preset time intervals again;
controlling each feeder to feed the single crystal furnaces in the associated task list;
and updating the charging mark of the single crystal furnace after charging is finished.
Optionally, the adding the single crystal furnace to the task list of the selected feeder includes:
obtaining the total weight of the residual silicon raw material in the single crystal furnace;
calculating the ratio of the charging weight to be charged to the total weight;
and adding the single crystal furnaces to a task list of the selected feeder according to the descending order of the ratio.
Optionally, controlling each feeder to feed the single crystal furnace in the associated task list includes:
and controlling each feeder to sequentially feed the single crystal furnaces according to the sequence of the single crystal furnaces in the associated task list.
Optionally, if the charging mark indicates that the charging mark is added to the charging task and the charging weight to be charged is 0, deleting the single crystal furnace from the task list where the single crystal furnace is located, updating the charging mark of the single crystal furnace, and executing the step of obtaining the list of the charging machines at preset time intervals again.
In a second aspect, there is provided a single crystal furnace charging apparatus comprising a memory having at least one program instruction stored therein and a processor for implementing the method of the first aspect by loading and executing the at least one program instruction.
In a third aspect, there is provided a computer storage medium having stored therein at least one program instruction which is loaded and executed by a processor to implement the method of the first aspect.
The configuration information of each single crystal furnace in the crystal pulling workshop is obtained; dividing each single crystal furnace into at least two groups according to the configuration information; for each group, allocating feeders for the group according to the total charge amount of each single crystal furnace in the group and the load capacity of each feeder; and feeding the single crystal furnaces of each group through a feeder configured for each group. The problem of among the prior art can lead to many single crystal growing furnaces can't receive the silicon raw materials and then influence single crystal growing furnace production in a certain period when the charging machine breaks down is solved, reached and to distribute the charging machine as required to feed for each single crystal growing furnace through the charging machine of distribution, eliminate the effect to the influence of single crystal growing furnace production.
The foregoing description is only an overview of the technical solutions of the present invention, and in order to make the technical solutions of the present invention more clearly understood and to implement them in accordance with the contents of the description, the following detailed description is given with reference to the preferred embodiments of the present invention and the accompanying drawings.
Drawings
FIG. 1 is a flow chart of a method for charging a single crystal furnace according to an embodiment of the invention.
Detailed Description
The technical solutions of the present invention will be described clearly and completely with reference to the accompanying drawings, and it should be understood that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in a specific case to those of ordinary skill in the art.
Furthermore, the technical features involved in the different embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.
Referring to fig. 1, a flow chart of a method of charging a single crystal furnace according to an embodiment of the present application is shown, and as shown in fig. 1, the method includes:
the configuration information includes at least one of a type of silicon raw material that needs to be added in each single crystal furnace, a diameter of a single crystal rod that needs to be pulled by each single crystal furnace, and a position of each single crystal furnace. In actual implementation, when the configuration information includes a plurality of configuration information, each configuration information may be acquired simultaneously or may be acquired separately, and the acquisition time of the configuration information is not limited in this embodiment.
102, dividing each single crystal furnace into at least two groups according to the configuration information;
in practical implementation, the steps include:
firstly, dividing each single crystal furnace into Q types according to the type of silicon raw materials required to be added in each single crystal furnace and/or the diameter of a single crystal rod required to be pulled by each single crystal furnace in the configuration information, wherein Q is a positive integer;
for example, the single crystal furnaces to which the silicon raw material is added are classified into one type; for another example, the pulled single crystal rods are classified into one type with the same diameter; for another example, the raw materials are classified into the same type and the same diameter.
In actual implementation, Q may be 1 or an integer greater than 1, depending on the actual production conditions in the crystal pulling plant, and is not limited thereto. In addition, according to actual needs, classification may be performed according to other information, and this embodiment is only illustrated by including types and diameters of raw materials, which is not limited to this.
Secondly, for each class, dividing each classified single crystal furnace into k groups according to the position of each single crystal furnace in the configuration information, wherein k is an integer larger than 1.
(1) Randomly selecting k single crystal furnaces from the single crystal furnaces as central single crystal furnaces;
(2) Calculating the distance between each classified single crystal furnace and each central single crystal furnace according to the position of each single crystal furnace;
positional information L, i.e./of all single crystal furnaces in a crystal pulling plant 1 (x 1 ,y 1 ),l 2 (x 2 ,y 2 )，Kl n (x n ,y n )；
If the jth single crystal furnace and the ith central single crystal furnace belong to the same category, calculating the distance from the jth furnace point to the ith central single crystal furnace, wherein the calculation formula is as follows:
wherein d is ij The distance between the jth furnace point and the ith central furnace point is shown, and TN is the total number of the single crystal furnaces.
(3) Dividing each single crystal furnace into the same groups as the central single crystal furnace closest to the central single crystal furnace;
for any single crystal furnace point l j (x j ,y j ) And if the distance from the point to the ith central single crystal furnace is minimum, classifying the jth point as the ith area unit.
(4) And if the preset conditions are not met, the step of randomly selecting k single crystal furnaces from the single crystal furnaces as the central single crystal furnaces is executed again, otherwise, grouping conditions are output, and the preset conditions comprise that the iteration times reach the preset times and/or the randomly selected central single crystal furnaces are unchanged.
The embodiment is only illustrated by including the two steps at the same time, and in actual implementation, the embodiment may also include only the first step or only the second step, which is not limited thereto.
Through the steps, the single crystal furnaces which draw the same type of silicon raw materials with the same diameter and the same type of silicon raw materials and have the same distance can be divided into the same region. Therefore, in the same region, different charging machines can charge materials to any single crystal furnace, the scheduling distance is the minimum, and the scheduling flexibility of the charging machines is greatly improved.
103, for each group, configuring feeders for the group according to the total loading amount of each single crystal furnace in the group and the loading capacity of each feeder;
the number of configured feeders is:
wherein N is the number of configured feeders, N is a positive integer, and w F The loading capacity of a single feeder, W s The total charge of all single crystal furnaces in the group.
In practical implementation, if the ratio of the two is not an integer, the smallest integer larger than the ratio is taken as the number of feeders.
And 104, charging the single crystal furnaces of each group through a charger configured for each group.
The method comprises the following steps:
(1) Initializing the charging marks of the single crystal furnaces to be not added to the charging task;
for example, the charging mark is represented by T, T =0 indicates that the single crystal furnace is not added to the charging task, and T =1 indicates that the single crystal furnace is added to the charging task.
(2) Acquiring a feeder list at intervals of preset time, and sequencing all feeders in the feeder list according to the ascending order of the number of distributed feeding tasks;
for example, the number of the N feeders is a, B, C and D, the number of the single crystal furnaces to be fed by each feeder is 5, 2, 3 and 1, and the sequence of each feeder in the feeders is D, B, C and a.
The predetermined time interval may be t seconds.
(3) For each single crystal furnace, acquiring a charging mark of the single crystal furnace and the charging weight to be charged;
the weight of the material to be charged is W L 。
(4) If the feeding mark indicates that the single crystal furnace is not added to the feeding task and the feeding weight to be fed is not 0, selecting a feeder at the head position from the feeder list, adding the single crystal furnace to the task list of the selected feeder, updating the feeding mark of the single crystal furnace, and executing the step of obtaining the feeder list at preset time intervals again;
for example, in the example in (2), the feeder D may be selected.
In practical implementation, the step of adding the single crystal furnace to the task list of the selected charging machine comprises the following steps:
A. obtaining the total weight of the residual silicon raw material in the single crystal furnace;
the obtained total weight is: w R 。
B. Calculating the ratio of the feeding weight to be fed to the total weight;
the calculated ratio is:
rw i 、W Li and W Ri Is the corresponding information of the ith single crystal furnace.
C. And adding the single crystal furnaces to a task list of the selected feeders according to the descending order of the ratio.
Since the ratio of each single crystal furnace can be calculated when the single crystal furnace is added to the task list every time, the single crystal furnaces which need to be added at present can be inserted into the task list according to the descending order of the ratio corresponding to each single crystal furnace.
And each single crystal furnace is divided into groups, a feeder list is maintained, the feeder lists are arranged according to the ascending sequence of tasks to be fed, tasks are preferentially distributed to the first feeder in the list, and the balance of the number of the feeding tasks of the feeders is ensured.
Optionally, after the single crystal furnace is added to the task list, the charging flag is updated to indicate that it has been added to the charging task.
(5) Controlling each feeder to feed the single crystal furnaces in the associated task list;
and controlling each feeder to sequentially feed materials to the single crystal furnaces according to the sequence of the single crystal furnaces in the associated task list.
According to the scheme, the single crystal furnaces can be charged as required, and the single crystal furnaces with the most material shortage and the least material residue are ensured to be charged preferentially.
(6) And updating the charging mark of the single crystal furnace after charging.
For example, the charge mark of the single crystal furnace is updated from 1 to 0. And deleting the single crystal furnace after charging from the corresponding task list.
In actual implementation, if the update or the deletion fails, multiple attempts may be made, and if the multiple attempts still fail, the subsequent process is continued.
(7) And if the charging mark indicates that the charging mark is added to the charging task and the charging weight to be charged is 0, deleting the single crystal furnace from the task list, updating the charging mark of the single crystal furnace, and executing the step of acquiring the charger list at preset time intervals again.
It should be noted that, in each of the above embodiments, if a certain feeder fails, each single crystal furnace to be fed in the task list of the feeder is allocated to another feeder, and during allocation, for each task to be allocated, the feeder at the head is selected from the other feeders in the feeder list, the feeder list is updated, and the feeder at the head is selected from the other feeders in the feeder list again until all the single crystal furnaces to be fed are allocated completely.
In conclusion, the configuration information of each single crystal furnace in the crystal pulling workshop is obtained; dividing each single crystal furnace into at least two groups according to the configuration information; for each group, configuring feeders for the group according to the total loading amount of each single crystal furnace in the group and the loading capacity of each feeder; and feeding the single crystal furnaces of each group through a feeder configured for each group. The problem of among the prior art can lead to many single crystal growing furnaces can't receive silicon raw materials and then influence single crystal growing furnace production in a certain time when the charging machine breaks down is solved, reached and to distribute the charging machine as required to feed in raw material for each single crystal growing furnace through the charging machine of distribution, eliminate the effect to the influence of single crystal growing furnace production.
The single crystal furnace which takes the same type of silicon raw materials with the same diameter and the same type of silicon raw materials and has similar distances is divided into the same area. Therefore, in the same region, different charging machines can charge materials to any single crystal furnace, the scheduling distance is the minimum, and the scheduling flexibility of the charging machines is greatly improved.
And each single crystal furnace is divided into groups, a feeder list is maintained, the feeder lists are arranged according to the ascending sequence of tasks to be fed, tasks are preferentially distributed to the first feeder in the list, and the balance of the number of the feeding tasks of the feeders is ensured.
According to the scheme, the single crystal furnaces can be charged according to the requirement, and the single crystal furnaces with the most material shortage and the least material residue are guaranteed to be charged preferentially.
The application also provides a single crystal furnace charging device which comprises a memory and a processor, wherein the memory is stored with at least one program instruction, and the processor is used for realizing the method by loading and executing the at least one program instruction.
The present application also provides a computer storage medium having stored therein at least one program instruction, which is loaded and executed by a processor to implement the method as described above.
All possible combinations of the technical features of the above embodiments may not be described for the sake of brevity, but should be considered as within the scope of the present disclosure as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is specific and detailed, but not to be understood as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.
Claims (8)
1. A single crystal furnace charging method is characterized by comprising the following steps:
acquiring configuration information of each single crystal furnace in a crystal pulling workshop;
dividing each single crystal furnace into at least two groups according to the configuration information;
for each group, configuring feeders for the group according to the total loading amount of each single crystal furnace in the group and the loading capacity of each feeder;
feeding the single crystal furnaces of each group through a feeder configured for each group;
the step of configuring the feeders for the grouping according to the total material loading of the single crystal furnaces and the load capacity of each feeder in the grouping comprises the following steps:
the number of configured feeders is:
wherein N is the number of configured feeders, N is a positive integer, and w F The loading capacity of a single feeder, W s The total charge of all the single crystal furnaces in the group;
the feeding of the single crystal furnaces of each group is carried out through a feeder configured for each group, and the method comprises the following steps:
initializing the charging mark of each single crystal furnace to be not added to the charging task;
acquiring a feeder list at intervals of preset time, wherein all feeders in the feeder list are sorted in an ascending order according to the number of distributed feeding tasks;
for each single crystal furnace, acquiring a charging mark of the single crystal furnace and charging weight to be charged;
if the feeding mark indicates that the feeding mark is not added to the feeding task and the feeding weight to be fed is not 0, selecting a feeder at the head position from the feeder list, adding the single crystal furnace to the task list of the selected feeder, updating the feeding mark of the single crystal furnace, and executing the step of obtaining the feeder list at preset time intervals again;
controlling each feeder to feed the single crystal furnaces in the associated task list;
and updating the charging mark of the single crystal furnace after charging is finished.
2. The method of claim 1, wherein the dividing the respective single crystal furnaces into at least two groups according to the configuration information comprises:
dividing each single crystal furnace into Q types according to the type of the silicon raw material required to be added in each single crystal furnace and/or the diameter of the single crystal rod required to be pulled by each single crystal furnace in the configuration information, wherein Q is a positive integer;
for each class, dividing each single crystal furnace into k groups according to the position of each single crystal furnace in the configuration information, wherein k is an integer greater than 1.
3. The method of claim 2, wherein the dividing the sorted single crystal furnaces into k groups according to the position of each single crystal furnace in the configuration information comprises:
randomly selecting k single crystal furnaces from the single crystal furnaces as central single crystal furnaces;
calculating the distance between each classified single crystal furnace and each central single crystal furnace according to the position of each single crystal furnace;
dividing each single crystal furnace into the same groups as the central single crystal furnace closest to the central single crystal furnace;
and if the preset conditions are not met, the step of randomly selecting k single crystal furnaces from the single crystal furnaces as the central single crystal furnaces is executed again, otherwise, grouping conditions are output, and the preset conditions comprise that the iteration times reach the preset times and/or the randomly selected central single crystal furnaces are unchanged.
4. The method of claim 1, wherein adding the single crystal furnace to a task list of selected loaders comprises:
obtaining the total weight of the residual silicon raw material in the single crystal furnace;
calculating the ratio of the charging weight to be charged to the total weight;
and adding the single crystal furnaces to a task list of the selected feeder according to the descending order of the ratio.
5. The method of claim 4, wherein controlling each feeder to feed the single crystal furnace in the associated task list comprises:
and controlling each feeder to sequentially feed materials to the single crystal furnaces according to the sequence of the single crystal furnaces in the associated task list.
6. The method of claim 3,
and if the charging mark indicates that the charging mark is added to the charging task and the charging weight to be charged is 0, deleting the single crystal furnace from the task list, updating the charging mark of the single crystal furnace, and executing the step of acquiring the charger list at preset time intervals again.
7. A single crystal furnace charging apparatus, characterized in that the apparatus comprises a memory and a processor, wherein at least one program instruction is stored in the memory, and the processor loads and executes the at least one program instruction to realize the method according to any one of claims 1 to 6.
8. A computer storage medium having stored therein at least one program instruction which is loaded and executed by a processor to implement the method of any one of claims 1 to 6.
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| CN110952138A (en) * | 2019-12-13 | 2020-04-03 | 亚洲硅业(青海)股份有限公司 | Secondary feeding device and method for single crystal furnace |
| CN111020700A (en) * | 2019-12-20 | 2020-04-17 | 银川隆基硅材料有限公司 | Method, device and equipment for determining monocrystalline silicon charging data |
| WO2020253032A1 (en) * | 2019-06-17 | 2020-12-24 | 宁夏隆基硅材料有限公司 | Crystal pulling method and single crystal furnace |
| CN113046823A (en) * | 2021-02-07 | 2021-06-29 | 宇泽半导体(云南)有限公司 | Single crystal feeding method |
| CN113355738A (en) * | 2021-06-15 | 2021-09-07 | 无锡松瓷机电有限公司 | Single crystal furnace charging method and single crystal furnace charging system |
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2021
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| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2020253032A1 (en) * | 2019-06-17 | 2020-12-24 | 宁夏隆基硅材料有限公司 | Crystal pulling method and single crystal furnace |
| CN110952138A (en) * | 2019-12-13 | 2020-04-03 | 亚洲硅业(青海)股份有限公司 | Secondary feeding device and method for single crystal furnace |
| CN111020700A (en) * | 2019-12-20 | 2020-04-17 | 银川隆基硅材料有限公司 | Method, device and equipment for determining monocrystalline silicon charging data |
| CN113046823A (en) * | 2021-02-07 | 2021-06-29 | 宇泽半导体(云南)有限公司 | Single crystal feeding method |
| CN113355738A (en) * | 2021-06-15 | 2021-09-07 | 无锡松瓷机电有限公司 | Single crystal furnace charging method and single crystal furnace charging system |
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