CN111020700A

CN111020700A - Method, device and equipment for determining monocrystalline silicon charging data

Info

Publication number: CN111020700A
Application number: CN201911329944.2A
Authority: CN
Inventors: 李博一; 王慧智; 罗向玉; 冉瑞应; 金雪; 周宏坤; 陈龙; 杨东
Original assignee: Yinchuan Longi Silicon Materials Co Ltd
Current assignee: Yinchuan Longi Silicon Materials Co Ltd
Priority date: 2019-12-20
Filing date: 2019-12-20
Publication date: 2020-04-17

Abstract

The invention provides a method, a device and equipment for determining monocrystalline silicon charging data, which comprises the following steps: acquiring the process step state of the single crystal furnace; acquiring operation parameter data of the single crystal furnace under the condition that the process step state is the silicon rod unloading process step; and under the condition that the charging operation is determined to be started according to the operation parameter data, acquiring the information of a crucible in the single crystal furnace and the raw material information of raw materials required by the single crystal furnace, and determining the charging data according to the information of the crucible, the raw material information and the operation parameter data. According to the invention, when the silicon rod unloading process step is in the process step of silicon rod unloading, the feeding data can be determined through the operation parameter data of the single crystal furnace, the crucible information and the raw material information, so that the feeding operation for preparing the monocrystalline silicon is quicker and more accurate, the time for determining the monocrystalline silicon feeding data is shortened, and the production efficiency of the monocrystalline silicon is improved.

Description

Method, device and equipment for determining monocrystalline silicon charging data

Technical Field

The invention relates to the technical field of monocrystalline silicon, in particular to a method, a device and equipment for determining monocrystalline silicon charging data.

Background

With the continuous consumption of traditional energy and the increasingly serious negative impact on the environment, the function of the crystalline silicon solar cell in the aspects of changing the energy structure, relieving the environmental pressure and the like is increasingly prominent, and the monocrystalline silicon as one of the important basic materials of the crystalline silicon solar cell has wide market demand.

In the prior art, a multi-charging crystal pulling technology is usually adopted to prepare monocrystalline silicon, and the specific process is as follows: after the preparation of a single crystal silicon rod is completed through operations of seeding, shouldering, shoulder rotating, diameter equalizing, ending and the like, raw materials and doping agents are added into the quartz crucible again through feeding, and the preparation of the single crystal silicon rod is continued, wherein the determination process of the weight of the raw materials needing to be added during feeding is as follows: and manually weighing the obtained weight of the silicon single crystal rod and the weight of filter residue filtered from the silicon melt raw material, taking the sum of the weight of the silicon single crystal rod and the weight of the filter residue as the weight of the raw material to be added during feeding, and further manually calculating and determining the weight of the dopant to be added during feeding according to the weight of the raw material and a related formula.

However, in the prior art, the weights of the silicon single crystal rod and the filter residue need to be manually weighed, and the weight of the raw material and the weight of the dopant need to be added during the charging process need to be manually calculated according to the weighing result, so that the charging operation of the single crystal silicon charging process is performed according to the obtained charging data of the single crystal silicon, and therefore, the process of determining the weight of the raw material and the weight of the dopant need to be added is long in time consumption and poor in accuracy during the charging process.

Disclosure of Invention

The invention provides a method, a device and equipment for determining monocrystalline silicon charging data, and aims to improve the accuracy of a process of determining the weight of raw materials and the weight of a dopant to be charged in the charging operation of preparing monocrystalline silicon by a Czochralski method and shorten the time consumption of the process.

In a first aspect, an embodiment of the present invention provides a method for determining monocrystalline silicon charging data, where the method includes:

acquiring the process step state of the single crystal furnace;

acquiring operation parameter data of the single crystal furnace under the condition that the process step state is a silicon rod unloading process step;

and under the condition that the charging operation is determined to be started according to the operation parameter data, acquiring the information of a crucible in the single crystal furnace and the raw material information of raw materials required by the single crystal furnace, and determining the charging data according to the information of the crucible, the raw material information and the operation parameter data.

Optionally, the charging data includes: the weight of the raw material to be charged and the weight of the dopant to be charged;

the step of acquiring information of a crucible in the single crystal furnace and raw material information of raw materials required by the single crystal furnace under the condition of determining to start feeding operation according to the operation parameter data, and determining feeding data according to the information of the crucible, the raw material information and the operation parameter data comprises the following steps:

acquiring the information of the crucible and the raw material information from a monocrystalline silicon production management system under the condition that the charging operation is determined to be started according to the operation parameter data;

determining the weight of the fed raw materials according to the information of the crucible, the raw material information and the operation parameter data;

and determining the weight of the fed dopant according to the information of the crucible, the raw material information, the operation parameter data and the weight of the fed raw material.

Optionally, the information of the crucible includes: the type of the crucible and the size of the crucible;

the raw material information comprises: the density of the feed material;

the operational parameter data includes: a first position of the crucible in the seeding process and a second position of the crucible in the silicon rod unloading process;

the step of determining the weight of the charged raw material according to the information of the crucible, the raw material information and the operation parameter data comprises the following steps:

according to the type of the crucible and the size of the crucible, carrying out region division on the crucible to obtain a plurality of regions and a volume calculation formula corresponding to each region;

determining the liquid level descending size of the raw material according to the first position and the second position;

determining the consumption of the raw materials according to the volume calculation formula and the liquid level descending size;

determining the weight of the feed material based on the consumption and the density of the feed material.

Optionally, the raw material information further includes: the resistivity of the single crystal silicon rod, the number of dopant impurity atoms of the raw material, the dopant concentration of the single crystal silicon rod, the impurity concentration of the charging raw material, the segregation coefficient of the dopant, the impurity concentration corresponding to the resistivity of the head of the single crystal silicon rod prepared after the charging operation and the impurity concentration of the dopant;

the operational parameter data further comprises: the size of the single crystal silicon rod;

the information of the crucible further includes: a designed total charge volume of the crucible;

the step of determining the weight of the charged dopant based on the information of the crucible, the information of the raw material, the data of the operating parameters and the weight of the charged raw material comprises:

determining the volume of the single crystal silicon rod according to the size of the single crystal silicon rod;

determining the volume of the residual raw material according to the designed total charging volume of the crucible, the volume calculation formula and the liquid level descending size;

determining the dopant concentration of the residual raw material according to the raw material information, the volume of the single crystal silicon rod and the volume of the residual raw material;

determining the weight of the residual raw material according to the volume of the residual raw material and the density of the residual raw material;

determining the feed dopant weight based on the weight of the remaining feedstock, the dopant concentration of the remaining feedstock, the feed feedstock weight, and the feedstock information.

Optionally, the operation parameter data includes: the length of the single crystal silicon rod, the running time of the single crystal furnace and the pressure in the single crystal furnace;

determining to start the feeding operation under the conditions that the length of the single crystal silicon rod is greater than a preset length value, the running time is less than a preset time value, and the pressure in the furnace is less than a first preset pressure value;

and acquiring the information of the crucible and the raw material information, and determining the charging data according to the information of the crucible, the raw material information and the operation parameter data.

Optionally, after the step of determining the weight of the feed material based on the consumption and the density of the feed material, the method further comprises:

and determining the weight of the new crystal pulling raw material and the weight of the repeated crystal pulling raw material contained in the feeding raw material from a preset database according to the weight of the feeding raw material.

Optionally, after the step of obtaining information of a crucible in the single crystal furnace and raw material information of raw materials required by the single crystal furnace and determining charging data according to the information of the crucible, the raw material information and the operating parameter data when it is determined to start the charging operation according to the operating parameter data, the method further includes:

and sending the charging data to a charging device so that the charging device can complete the batching operation, the transportation operation and the charging operation of the charging raw material and the charging dopant in the monocrystalline silicon charging process according to the charging data.

Optionally, after the step of obtaining the process step state of the single crystal furnace, the method further includes:

and acquiring the operating parameter data of the single crystal furnace under the condition that the process step state is an abnormal state and the command of starting the feeding operation sent by the single crystal furnace is determined to be received.

In a second aspect, an embodiment of the present invention provides an apparatus for determining monocrystalline silicon charging data, the apparatus including:

the first acquisition module is used for acquiring the process step state of the single crystal furnace;

the second acquisition module is used for acquiring the operating parameter data of the single crystal furnace under the condition that the process step state is the silicon rod unloading process step;

the first determining module is used for acquiring the information of the crucible in the single crystal furnace and the raw material information of the raw material required by the single crystal furnace under the condition of determining to start the feeding operation according to the operation parameter data, and determining the feeding data according to the information of the crucible, the raw material information and the operation parameter data.

Optionally, the charging data includes: the first determining module comprises:

the acquisition submodule is used for acquiring the information of the crucible and the raw material information from a monocrystalline silicon production management system under the condition that the charging operation is determined to be started according to the operation parameter data;

the first determining submodule is used for determining the weight of the fed raw material according to the information of the crucible, the raw material information and the operation parameter data;

and the second determining submodule is used for determining the weight of the fed dopant according to the information of the crucible, the raw material information, the operation parameter data and the weight of the fed raw material.

the raw material information comprises: the density of the feed material;

the first determination submodule includes:

the first determining unit is used for dividing the crucible into a plurality of regions according to the type of the crucible and the size of the crucible to obtain a volume calculation formula corresponding to each region;

the second determining unit is used for determining the liquid level descending size of the raw material according to the first position and the second position;

a third determining unit, configured to determine a consumption amount of the raw material according to the volume calculation formula and the liquid level decreasing size;

a fourth determining unit for determining the weight of the charging raw material based on the consumption amount and the density of the charging raw material.

the second determination submodule includes:

a sixth determining unit, configured to determine a volume of the single crystal silicon rod according to the size of the single crystal silicon rod;

a seventh determining unit for determining the volume of the remaining raw material based on the designed total charge volume of the crucible, the volume calculation formula, and the liquid level decreasing size;

an eighth determining unit, configured to determine a dopant concentration of the remaining raw material according to the raw material information, the volume of the single crystal silicon rod, and the volume of the remaining raw material;

a ninth determining unit for determining the weight of the remaining raw material based on the volume of the remaining raw material and the density of the remaining raw material;

a tenth determining unit for determining the charged dopant weight based on the weight of the remaining raw material W1, the dopant concentration of the remaining raw material, the charged raw material weight, and the raw material information.

Optionally, the operation parameter data includes: the length of the single crystal silicon rod, the running time of the single crystal furnace and the pressure in the furnace are determined, and the first determination module comprises:

the third determining submodule is used for determining to start the feeding operation under the conditions that the length of the single crystal silicon rod is greater than a preset length value, the running time is less than a preset time value, and the pressure in the furnace is less than a first preset pressure value;

and the fourth determining submodule is used for acquiring the information of the crucible and the raw material information and determining the charging data according to the information of the crucible, the raw material information and the operation parameter data.

Optionally, the first determining sub-module may further include:

a fifth confirming unit for determining the weight of the new crystal pulling raw material and the weight of the repeated crystal pulling raw material contained in the feed raw material from a preset database according to the weight of the feed raw material.

Optionally, the apparatus further comprises:

and the sending module is used for sending the charging data to a charging device so that the charging device can complete the batching operation, the transportation operation and the charging operation of the charging raw materials and the charging dopant in the monocrystalline silicon charging process according to the charging data.

Optionally, the apparatus may further include:

and the second determining module is used for acquiring the operating parameter data of the single crystal furnace under the condition that the process step state is an abnormal state and the instruction for starting the feeding operation sent by the single crystal furnace is determined to be received.

In a third aspect, an embodiment of the present invention provides an apparatus for determining monocrystalline silicon charging data, where the apparatus includes: the system comprises an interface, a bus, a memory and a processor, wherein the interface, the memory and the processor are connected through the bus, the memory is used for storing an executable program, and the processor is configured to run the executable program to realize the steps of the determination method of the monocrystalline silicon charging data.

A fourth aspect of the present invention provides a computer-readable storage medium having stored thereon an executable program, the executable program being executed by a processor to perform the steps of the method for determining monocrystalline silicon loading data.

The method for determining monocrystalline silicon charging data provided by the embodiment of the invention comprises the following steps: acquiring the process step state of the single crystal furnace; acquiring operation parameter data of the single crystal furnace under the condition that the process step state is the silicon rod unloading process step; and under the condition that the charging operation is determined to be started according to the operation parameter data, acquiring the information of a crucible in the single crystal furnace and the raw material information of raw materials required by the single crystal furnace, and determining the charging data according to the information of the crucible, the raw material information and the operation parameter data. In the application, when the process step state is the silicon rod unloading process step, the feeding data can be determined through the operation parameter data of the single crystal furnace, the information of the crucible and the raw material information, so that the feeding operation for preparing the monocrystalline silicon is quicker and more accurate, the time for determining the feeding data of the monocrystalline silicon is shortened, and the production efficiency of the monocrystalline silicon is improved.

Drawings

In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the description of the embodiments of the present invention will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art that other drawings can be obtained according to these drawings without inventive labor.

FIG. 1 is a flow chart illustrating the steps of a method for determining single crystal silicon loading data according to a first embodiment of the present invention;

FIG. 2 is a flow chart illustrating the steps of a method for determining single crystal silicon loading data in a second embodiment of the present invention;

FIG. 3 is a schematic view showing the division of the crucible into zones according to the second embodiment of the present invention;

FIG. 4 is a schematic view showing a crucible size mark in the second embodiment of the present invention;

FIG. 5 is a flow chart illustrating steps of a method for intelligent dosing and feeding in a third embodiment of the present invention;

FIG. 6 is a schematic view showing a data configuration of an apparatus for determining charging data of single-crystal silicon according to a third embodiment of the present invention;

FIG. 7 is a block diagram showing a configuration of a device for determining single crystal silicon charging data according to a third embodiment of the present invention;

fig. 8 is a schematic diagram showing a logical structure of an apparatus for determining single crystal silicon charging data according to an embodiment of the present invention.

Detailed Description

The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.

Example one

Referring to fig. 1, fig. 1 is a flow chart illustrating steps of a method for determining monocrystalline silicon charging data according to a first embodiment of the invention. The method may comprise the steps of:

and 101, acquiring the process step state of the single crystal furnace.

In this step, the process step state of the single crystal furnace can be acquired by the single crystal furnace equipment, so that it can be determined whether the charging operation for the single crystal furnace can be started or not according to the process step state of the single crystal furnace.

Specifically, in the process for producing the silicon single crystal rod by the czochralski method, raw materials are firstly loaded into a quartz crucible in a single crystal furnace, protective gas is introduced into the furnace body after the furnace body is sealed, a material block is heated to 1400 ℃ through a heater to be melted, the raw materials are formed after the raw materials pre-loaded in the quartz crucible are melted, the crystal pulling process of the silicon single crystal rod is completed through the work steps of seeding, shouldering, rotating shoulder, ending, detaching the silicon rod and the like, after the silicon single crystal rod is pulled, the raw materials are added into the quartz crucible again through the feeding operation, and the silicon single crystal rod is pulled through the work steps of seeding, shouldering, rotating shoulder, diameter equalizing, ending, detaching the silicon rod and the like, and the process is repeated, and finally the heater is closed to stop the furnace for cooling.

And step 102, acquiring the operation parameter data of the single crystal furnace under the condition that the process step state is the silicon rod unloading process step.

In this step, if the process step state of the single crystal furnace obtained from the single crystal furnace equipment is the silicon rod unloading process step, it indicates that the seeding, shouldering, shoulder rotating, diameter equalizing and ending process steps of one single crystal silicon rod are completed at this time, the single crystal silicon rod obtained by drawing is being unloaded from the single crystal furnace, at this time, the operation parameter data of the single crystal furnace can be obtained, and the feeding data in the feeding operation is calculated and determined in combination with other data, so that the feeding into the crucible of the single crystal furnace can be completed according to the feeding data, and the equipment can continue to perform the drawing process of the next single crystal silicon rod.

It should be noted that, in the embodiment of the present invention, after the ending process step of the process for preparing single crystal silicon by the czochralski method is completed, the size of the already-pulled single crystal silicon rod can be determined, and then the weight of the raw material consumed in the process for pulling the single crystal silicon rod can be determined, so as to determine the weight of the raw material to be added into the crucible in the feeding operation, but the weight of the single crystal silicon rod can be determined by manually weighing the silicon rod after the silicon rod unloading process step is completed and after the pulled single crystal silicon rod is cooled to the normal temperature. Therefore, the embodiment of the invention can determine the charging data more quickly and accurately, shorten the time for determining the monocrystalline silicon charging data and improve the production efficiency of the monocrystalline silicon.

In the embodiment of the present invention, when the charging operation is performed in the production of single crystal silicon by the czochralski method, the raw material may be a liquid silicon raw material.

Specifically, the operation parameter data of the single crystal furnace may include a size of the pulled single crystal silicon rod, an operation time of the single crystal furnace, a furnace pressure of the single crystal furnace, a first position where the crucible is located during the seeding process, a second position where the crucible is located during the silicon rod removing process, and the like.

103, under the condition that the charging operation is determined to be started according to the operation parameter data, acquiring the information of the crucible in the single crystal furnace and the raw material information of the raw material required by the single crystal furnace, and determining the charging data according to the information of the crucible, the raw material information and the operation parameter data.

In this step, whether to start the charging operation can be judged according to the acquired operation parameter data of the single crystal furnace.

Further, if it is determined that the charging operation is not performed according to the operation parameter data of the single crystal furnace, no operation is performed. If the charging operation is determined to be started according to the operation parameter data of the single crystal furnace, the information of the crucible in the single crystal furnace can be obtained through single crystal furnace equipment, the raw material information of the raw materials required by the single crystal furnace is obtained through a single crystal silicon production management system, and the charging data in the charging operation process is determined according to the information of the crucible, the raw material information and the operation parameter data.

It should be noted that, when preparing single crystal silicon, the raw material for pulling single crystal silicon is polysilicon, usually a certain amount of impurity elements, i.e. dopants, are added, the added impurity elements determine the electrical properties of the doped single crystal silicon, such as conductivity, resistivity, minority carrier lifetime, etc., when preparing N-type single crystal silicon, group V elements (such as phosphorus, arsenic, antimony, bismuth) are used, when preparing P-type single crystal silicon, group iii elements (such as boron, aluminum, gallium, indium, titanium) are used, and the amount of the impurity elements in the single crystal silicon determines the resistivity of the single crystal silicon, so the feeding data includes the weight of the feeding raw material and the weight of the feeding dopants.

Specifically, the information of the crucible in the single crystal furnace comprises the type and corresponding size parameters of the crucible in the single crystal furnace equipment, so that the shape of the crucible can be divided into regions, the plurality of regions obtained after division are analyzed, a volume calculation formula corresponding to each region is determined, the volume and weight of the raw materials consumed in the whole process of preparing the single crystal silicon rod can be calculated by combining the descending size of the liquid level of the raw materials in the process of pulling the single crystal silicon rod, the weight of the raw materials needing to be added into the crucible in the feeding operation can be determined, and the weight of the added dopant can be determined according to the weight of the added raw materials through the calculation of a related formula.

In an embodiment of the present invention, a method for determining monocrystalline silicon charging data includes: acquiring the process step state of the single crystal furnace; acquiring operation parameter data of the single crystal furnace under the condition that the process step state is the silicon rod unloading process step; and under the condition that the charging operation is determined to be started according to the operation parameter data, acquiring the information of a crucible in the single crystal furnace and the raw material information of raw materials required by the single crystal furnace, and determining the charging data according to the information of the crucible, the raw material information and the operation parameter data. In the application, when the process step state is the silicon rod unloading process step, the feeding data can be determined through the operation parameter data of the single crystal furnace, the information of the crucible and the raw material information, so that the feeding operation for preparing the monocrystalline silicon is quicker and more accurate, the time for determining the feeding data of the monocrystalline silicon is shortened, and the production efficiency of the monocrystalline silicon is improved.

Example two

Referring to fig. 2, a flow chart of steps of a method for determining monocrystalline silicon charging data in a second embodiment of the invention is shown, and the method may include the following steps:

step 201, acquiring the process step state of the single crystal furnace.

This step may specifically refer to step 101, which is not described herein again.

After step 201, step 202 may be performed, or step 203 may be performed.

Step 202, acquiring the operation parameter data of the single crystal furnace under the condition that the process step state is an abnormal state and the instruction for starting the feeding operation sent by the single crystal furnace is determined to be received.

In the step, if the process step state of the single crystal furnace obtained from the single crystal furnace equipment is an abnormal state, namely an abnormal situation occurs in the operation process of the single crystal furnace, and the single crystal furnace does not operate according to the automatic process steps of seeding, shouldering, shoulder rotating, diameter equalizing, ending and silicon rod unloading, whether the single crystal silicon rod is in the silicon rod unloading process step or not cannot be monitored, an operator of the single crystal furnace equipment can initiate manual feeding requirement through a secondary material calling button on the single crystal furnace equipment, namely, the single crystal furnace sends an instruction for starting feeding operation, and under the condition of receiving the instruction, the operator can determine that the single crystal furnace is in the silicon rod unloading process step through observation at the moment, and the single crystal rate can carry out feeding operation at the moment, so that the feeding operation can be started, the operation parameter data can be obtained, and other data are further combined, so that the feeding data in the feeding operation can be calculated and determined, therefore, the charging into the crucible of the single crystal furnace can be finished according to the charging data, so that the equipment can continue to perform the drawing process of the next single crystal silicon rod.

It should be noted that, in the embodiment of the present invention, after the ending process step of the process for preparing the single crystal silicon rod by the czochralski method is completed, the size of the already-pulled single crystal silicon rod can be determined, and then the weight of the consumed raw material in the process for pulling the single crystal silicon rod can be determined, so as to determine the weight of the raw material which needs to be added into the crucible in the feeding operation, but the weight of the single crystal silicon rod can be determined by manually weighing the pulled single crystal silicon rod after the silicon rod is completely removed and after the pulled single crystal silicon rod is cooled to the normal temperature. Therefore, the embodiment of the invention can determine the charging data more quickly and accurately, shorten the charging operation time of preparing the monocrystalline silicon rod by the Czochralski method and improve the production efficiency of the monocrystalline silicon.

After step 202, step 205 may be performed.

And 203, acquiring the operation parameter data of the single crystal furnace under the condition that the process step state is the silicon rod unloading process step.

This step may specifically refer to step 102, which is not described herein again.

Step 204, the operation parameter data includes: the length of the single crystal silicon rod, the running time of the single crystal furnace and the pressure in the single crystal furnace; and determining to start the feeding operation under the conditions that the length of the single crystal silicon rod is greater than a preset length value, the running time is less than a preset time value, and the pressure in the furnace is less than a first preset pressure value.

In this step, it can be further determined whether the single crystal furnace apparatus can perform the charging operation at this time based on the operational parameter data of the single crystal furnace.

Specifically, the operation parameter data includes: the length of the single crystal silicon rod, the running time of the single crystal furnace and the pressure in the single crystal furnace.

In the embodiment of the invention, under the condition that the length of the single crystal silicon rod is greater than a preset length value, the running time is less than a preset time value, and the pressure in the furnace is less than a first preset pressure value, the charging operation is determined to be started.

In the preparation process of the single crystal silicon rod, the single crystal silicon rod is required to have a certain length, and then taken out of the single crystal furnace through the silicon rod unloading step to be used as a qualified single crystal silicon rod product for subsequent processing, if the length of the single crystal silicon rod cannot meet the qualified product requirement, the pulled single crystal silicon rod is re-melted in the crucible and is used as a raw material to continue to be pulled for the single crystal silicon rod, so that the raw material in the crucible cannot be consumed, and when the length of the single crystal silicon rod is less than or equal to a preset length value, the feeding operation is not carried out.

Further, in the preparation process of the single crystal silicon rod, a quartz crucible is used as a container for loading raw materials, but the quartz crucible cannot continuously work for a long time in a high-temperature environment of the single crystal furnace, so that when the operation time of the single crystal furnace is greater than or equal to a preset time value, the feeding operation is not performed.

In addition, in the preparation process of the single crystal silicon rod, a furnace body of the single crystal furnace needs to be in a sealed state, protective gas is introduced into the single crystal furnace body, and if the pressure in the single crystal furnace is too high, the preparation requirement of the single crystal silicon rod cannot be met, so that when the pressure in the single crystal furnace is greater than or equal to a first preset pressure value, the feeding operation is not carried out.

Preferably, the preset length value may be 500 mm, the preset time value may be 280 hours, and the first preset pressure value may be 15 torr.

Optionally, when the operation time of the single crystal furnace is greater than the preset time value, the charging operation can be continued, but the precondition is that the pressure in the single crystal furnace cannot exceed a second preset pressure value.

Preferably, the second preset pressure value may be 18 torr.

Step 205, obtaining the information of the crucible and the raw material information, and determining the charging data according to the information of the crucible, the raw material information and the operation parameter data.

In this step, the charging data may be determined according to the obtained crucible information, raw material information, and operating parameter data, and specifically includes:

substep 2051, the loading data comprising: and the weight of the fed raw material and the weight of the fed dopant, and the information of the crucible and the raw material information are acquired from a monocrystalline silicon production management system under the condition that the start of the feeding operation is determined according to the operation parameter data.

In this step, in the case where it is determined that the charging operation is started, information of the crucible in the single crystal furnace and raw material information of raw materials required for the single crystal furnace can be acquired from the single crystal silicon production management system.

Specifically, the single crystal silicon production management system may include: a Manufacturing Execution System (MES) and an integrated management information System (ERP), wherein the MES can complete the functions of manufacturing Resource allocation and status report, detailed process operation planning, production scheduling, data acquisition, process management, etc., and the ERP is a highly integrated System applied in the whole company range and covers the management work of customers, projects, inventory and procurement, supply, production, etc.

The operation parameter data comprises the size of the pulled silicon single crystal rod, the operation time of the single crystal furnace, the pressure in the single crystal furnace, the first position of the crucible in the seeding process, the second position of the crucible in the silicon rod unloading process and the like.

The information of the crucible in the single crystal furnace comprises the type and corresponding size parameters of the crucible in the single crystal furnace equipment, so that the shape of the crucible can be divided into regions, the plurality of regions obtained after division are analyzed, a volume calculation formula corresponding to each region is determined, the volume and the weight of the consumed raw materials in the whole process of preparing the single crystal silicon rod can be calculated by combining the descending size of the liquid level of the raw materials in the process of drawing the single crystal silicon rod, the weight of the raw materials needing to be added into the crucible in the feeding operation can be determined, and the weight of the added dopant can be determined according to the weight of the added raw materials through the calculation of a relevant formula.

The raw material information of the raw materials required by the single crystal furnace comprises the resistivity of the single crystal silicon rod, the dopant concentration of the single crystal silicon rod, the density of the fed raw materials, the impurity concentration of the fed raw materials, the number of dopant impurity atoms of the raw materials, the segregation coefficient of the dopant, the impurity concentration corresponding to the resistivity of the head of the prepared single crystal silicon rod after the feeding operation and the like.

Substep 2052 of determining the weight of the charged material based on the crucible information, the feedstock information, and the operating parameter data.

In this step, the information of the crucible includes: the model of crucible, the size of crucible, raw materials information includes: the density of the feed material, the operational parameter data comprising: a first position of the crucible during the seeding process and a second position of the crucible during the silicon rod unloading process.

Substep 2052 specifically comprises:

and a substep A1, dividing the crucible into a plurality of regions according to the type of the crucible and the size of the crucible to obtain a plurality of regions and a volume calculation formula corresponding to each region.

Referring to FIG. 3, a schematic view of the zone division of a crucible in the second embodiment of the present invention is shown, according to the type of the crucible, the shape and the structure of the crucible can be determined, the crucible shown in FIG. 3 can be divided into a straight wall portion, a reverse arc portion and a bottom arc portion, and the volumes of the three portions of the crucible are V₁、V₂And V₃。

Referring to fig. 4, a schematic diagram of a crucible size mark in the second embodiment of the present invention is shown, wherein the external size parameters of the crucible are as follows: radius of base arc R₁Radius of reverse arc R₂Opening radius R₃Height H of the quartz crucible, wall thickness D of the quartz crucible, and internal dimension parameters of the crucible after the wall thickness is removed are as follows: radius of base arc r₁＝R₁D, radius of the reverse arc r₂＝R₂D, opening radius r₃＝R₃D, the quartz crucible height H ═ H-D, and the quartz crucible is designed with a total charge volume K.

Further, according to the internal dimension parameter of the quartz crucible, the dimension parameter of the quartz crucible along the axial direction of the crucible can be determined, which are respectively:

Y₁＝r₁-Y

Y₁＝r₁/(r₁-r₂)×Y-Y

Y₃＝Y₁-Y₂

Y₄＝h-Y₁

wherein Y is the distance from the bottom of the straight wall part of the crucible to the center of the bottom arc part, and Y is₁Is the distance from the bottom of the straight wall to the bottom of the bottom arc, Y₂Height of the inverted arc portion, Y₃Is the height of the base arc portion, Y₄The height of the straight wall portion.

The corresponding volumes of the straight wall part, the inverted arc part and the bottom arc part of the crucible are respectively V₁，V₂And V₃The volume calculation formula corresponding to each part of the crucible is as follows:

V₁(Y₄)＝π×r₃ ²×Y₄

and a substep A2 of determining a level drop size of the feedstock based on the first position and the second position.

In the process of preparing the monocrystalline silicon by the czochralski method, the raw material in the crucible is gradually reduced along with the pulling of the monocrystalline silicon rod, and in order to ensure that the liquid level position of the raw material in the crucible is not changed, the position of the crucible needs to be adjusted along with the pulling of the monocrystalline silicon rod, so that the height of the liquid level reduction is compensated by the movement of the quartz crucible in the process of producing the monocrystalline silicon rod by the czochralski method, and the liquid level of the raw material is ensured to be always kept at a determined relative position.

Therefore, the size of the liquid level drop of the raw material can be determined by the position of the crucible at the start of pulling of the single crystal silicon rod and the position of the crucible at the end of straightening of the single crystal silicon rod.

Specifically, the height of the first position where the crucible is located in the seeding process is G₁The height of the second position of the crucible in the step of detaching the silicon rod is G₂The size of the liquid level drop of the raw material in the quartz crucible is G₂-G₁。

And a substep A3 of determining the consumption of said raw material based on said volume calculation formula and said level-drop size.

In this step, the formula V is calculated based on the volumes of the straight wall portion, the inverted arc portion and the bottom arc portion of the crucible determined in the sub-step A2₁，V₂And V₃And determining the consumption of raw materials in the process of pulling the single crystal silicon rod according to the liquid level descending size X.

In particular, if X is less than or equal to Y₄That is, in the process of pulling the single crystal silicon rod, only part or all of the raw material of the straight wall part of the crucible is consumed, the consumption of the raw material is as follows:

V＝π×r₃ ²×X

if Y is₄＜X≤Y₄+Y₂That is, in the process of pulling the single crystal silicon rod, all the raw materials of the straight wall part in the crucible and part or all of the raw materials of the inverted arc part in the crucible are consumed, the consumption of the raw materials is as follows:

V＝V₁(Y₄)+V₂(X-Y₄)

if Y is₄+Y₂＜X≤Y₄+Y₂+Y₃That is, when the whole raw materials of the straight wall part and the inverted arc part in the crucible and the part or the whole raw materials of the bottom arc part in the crucible are consumed in the process of pulling the single crystal silicon rod, the consumption of the raw materials is explainedThe amount is:

V＝V₁(Y₄)+V₂(Y₁)+V₃(X-Y₄-Y₂)

substep a4, determining the weight of the feed material based on the consumption and the density of the feed material.

In this step, the feed material weight W is determined based on the consumption of the feed material determined in sub-step A3, and the density of the feed material₂＝V×ρ。

Wherein, W₂Rho is the weight of the feed material, rho is the density of the feed material, and V is the consumption of the feed material.

Substep 2053 of determining the weight of the new crystal pulling raw material and the weight of the repeated crystal pulling raw material contained in the feed raw material from a preset database based on the feed raw material weight.

In this step, the crystal pulling results are different due to the weight of the new crystal pulling raw material and the different ratios of the crystal pulling repeating raw material, and meanwhile, the crystal pulling repeating raw material has a plurality of kinds (also called re-pulling material), and the different ratios of the re-pulling material are different.

Therefore, a preset database can be constructed through big data modeling, the preset database is established with the weight of the new crystal pulling raw material in the feeding raw material and the matching proportion of the repeated crystal pulling raw material, and different resistivity weight proportion models of the repeated crystal pulling raw material, and the weight proportion of the new crystal pulling raw material and the weight proportion of the repeated crystal pulling raw material in the feeding raw material proportion are calculated.

Therefore, in the preset database, the output data of different raw material collocation is determined according to the past data: the yield and the output in unit hour are modeled to obtain an optimal raw material collocation scheme, and the optimal scheme is preferably collocated in the existing raw material collocation process on the basis of the on-site guidance of modeling analysis.

Substep 2054 of determining the charged dopant weight based on the crucible information, the feedstock information, the operating parameter data, and the charged feedstock weight.

In this step, the raw material information further includes: the resistivity of the single crystal silicon rod, the number of dopant impurity atoms of the raw material, the dopant concentration of the single crystal silicon rod, the impurity concentration of the charging raw material, the segregation coefficient of the dopant, the impurity concentration corresponding to the head resistivity of the single crystal silicon rod prepared after the charging operation, and the impurity concentration of the dopant, wherein the operation parameter data further comprises: the information on the crucible further includes: the designed total charge volume of the crucible.

Sub-step 2054 specifically includes:

and a substep B1 of determining the volume of the single crystal silicon rod according to the size of the single crystal silicon rod.

In this step, a volume of the single crystal silicon rod is determined based on operational parameter data including a size of the single crystal silicon rod.

In the embodiment of the invention, the silicon single crystal rod is a cylindrical round single crystal rod, and the volume of the silicon single crystal rod is the product of the sectional area and the length of the silicon single crystal rod.

And a substep B2 of determining the volume of the remaining source material based on the designed total charge volume of the crucible, the volume calculation formula, and the liquid level down size.

In this step, according to the substeps a1 and a2, a volume calculation formula corresponding to each of the regions of the crucible and a level-down size of the source material are determined, respectively, to thereby determine a consumption amount V of the source material, and since the quartz crucible is designed to have a total charge volume K, a volume V' of the remaining source material is K-V.

And a substep B3 of determining a dopant concentration of the remaining raw material based on the raw material information, the volume of the single crystal silicon rod, and the volume of the remaining raw material.

In this step, the resistivity of the silicon single crystal rod is stored as a production standard parameter in the silicon single crystal production management system as a known parameter value at the time of preparing the silicon single crystal rod.

Specifically, in the first step, the dopant concentration of the single crystal silicon rod may be determined according to the resistivity of the single crystal silicon rod, and specifically, the dopant concentration may be calculated by the following formula:

for boron-doped silicon single crystals:

for a phosphorus-doped silicon single crystal:

wherein X is log₁₀ρ₁，A₀＝-3.1083，A₁＝-3.2626，A₂＝-1.2196，A₃＝-0.13923，B₁＝1.0265，B₂＝0.38755，B₃＝0.041833，N₃Is the dopant concentration, rho, of the single crystal silicon rod₃Is the resistivity of the single crystal silicon rod.

And secondly, determining the number of dopant impurity atoms of the monocrystalline silicon according to the calculated dopant concentration of the monocrystalline silicon rod and the calculated volume of the monocrystalline silicon rod, and specifically calculating according to the following formula:

A₃＝N₃×V₃

wherein, V₃Calculating the volume of the single crystal silicon rod obtained for substep B1, A₃Is the number of dopant impurity atoms of the single crystal silicon rod.

Thirdly, determining the number of dopant impurity atoms of the residual liquid silicon according to the number of dopant impurity atoms of the raw material and the number of dopant impurity atoms of the single crystal silicon rod, and specifically calculating by the following formula:

A₁＝A₂-A₃

wherein A is₁Number of dopant impurity atoms, A, for the remaining liquid silicon₂The number of dopant impurity atoms as a starting material.

In the fourth step, the dopant concentration of the remaining liquid silicon may be determined according to the number of dopant impurity atoms of the remaining liquid silicon and the volume of the remaining liquid silicon calculated in sub-step B2, and specifically calculated by the following formula:

wherein N is₁Is the dopant concentration of the remaining liquid silicon and V' is the volume of the remaining liquid silicon.

And a substep B4 of determining the weight of the remaining raw material based on the volume of the remaining raw material and the density of the remaining raw material.

In this step, the weight of the remaining raw material may be determined according to the volume of the remaining raw material and the density of the remaining raw material.

Substep B5, determining the feed dopant weight based on the weight of the remaining feedstock, the dopant concentration of the remaining feedstock, the feed feedstock weight, and the feedstock information.

In this step, the weight of the added dopant may be determined according to the weight of the remaining raw material, the dopant concentration of the remaining raw material, the weight of the added raw material, the impurity concentration of the added raw material, the segregation coefficient of the dopant, the impurity concentration corresponding to the head resistivity of the single crystal silicon rod prepared after the addition operation, and the impurity concentration of the dopant, and specifically calculated by the following formula:

m＝[K₀×(W₁×N₁+W₂×N₂)]÷(C_T-C_m×K₀)

wherein m is the weight of the dopant charge, N₁Is the dopant concentration, W, of the remaining liquid silicon₁Is the weight of the remaining liquid silicon, W₂Is the weight of the raw materials added, N₂Is the impurity concentration of the feed material, K₀Is the segregation coefficient of the dopant, C_TIs the impurity concentration C corresponding to the resistivity of the head of the single crystal silicon rod prepared after charging_mIs the impurity concentration of the dopant.

And step 206, sending the feeding data to a feeding device, so that the feeding device can complete the batching operation, the transportation operation and the feeding operation of the feeding raw material and the feeding dopant in the monocrystalline silicon feeding process according to the feeding data.

In the step, according to the feeding data determined in the step, the weight of the raw material and the weight of the dopant which need to be added into the crucible in the feeding operation process can be determined, and further according to the feeding data, the polycrystalline silicon raw material and the dopant with corresponding weights are added into the crucible, so that the single crystal furnace can continue to prepare the single crystal silicon rod.

In the step, the calculated weight of the charging raw material and the calculated weight of the charging dopant are sent to the charging device, so that the charging device can perform the batching operation, the transporting operation and the charging operation of the charging raw material and the charging dopant according to the weight of the charging raw material and the weight of the charging dopant.

Specifically, the feeding device may include a batching device, a feeder and a transportation device, the batching device may select the feeding raw material and the feeding dopant according to the feeding data, and add the feeding raw material and the feeding dopant of corresponding weights into the feeder, and the feeder has a first code; further, the first code of the charger having been loaded with the charging source material and the charging dopant and the second code of the target single crystal furnace on which the charging operation is to be performed are sent to the transporting means, so that the transporting means transports the charger to the target single crystal furnace, and finally the charging source material and the charging dopant in the charger are added to the single crystal furnace, thereby completing the charging operation.

Preferably, the batching device can be a batching robot, namely, the batching robot is adopted to replace manpower to complete the batching process of feeding operation, so that the monocrystalline silicon preparation process is less humanized, and the labor intensity of personnel is reduced; the conveying device can be an Automatic Guided Vehicle (AGV), namely, the AGV is adopted to replace manpower to finish the conveying process of the feeding operation, the monocrystalline silicon preparation process is less humanized, and the labor intensity of personnel is reduced.

EXAMPLE III

Referring to fig. 5, a flowchart of steps of an intelligent batching and feeding method in a third embodiment of the present invention is shown, and applied to a feeding system including a single crystal furnace, a single crystal silicon feeding data determining device, and a feeding device, the method may include the following steps:

and 301, collecting the working state of the single crystal furnace.

And step 302, judging whether the single crystal furnace is in the silicon rod unloading step.

In the step, whether the single crystal furnace is in the silicon rod unloading step or not is judged according to the single crystal furnace step state collected by the single crystal furnace, if yes, the step 303 is executed, and if not, the step 306 is executed, and the feeding device does not respond.

And step 303, acquiring the operation parameter data of the single crystal furnace.

In this step, the single crystal furnace collects operation parameter data, specifically, the operation parameter data of the single crystal furnace may include a size of the single crystal silicon rod that has been pulled, an operation time of the single crystal furnace, a furnace internal pressure of the single crystal furnace, a first position where the crucible is located in the seeding process, a second position where the crucible is located in the silicon rod unloading process, and the like.

Step 304, acquiring operation parameter data.

In this step, the single crystal silicon charging data determining means acquires the operating parameter data of the single crystal furnace from the single crystal furnace equipment.

Step 305, judging whether to perform feeding operation.

In this step, it is judged whether or not the charging operation is performed based on the operation parameter data of the single crystal furnace, and if so, the step 307 is executed, and if not, the step 306 is executed, and the charging device does not respond.

This step may specifically refer to step 204, which is not described herein again.

Step 306, no response is made.

Step 307, raw material data and crucible information are acquired from the production management system.

This step may specifically refer to sub-step 2051, which is not described herein.

And step 308, determining charging data and generating a charging and batching instruction.

In this step, the process of determining the charging data according to the operation parameter data, the raw material data and the crucible information may specifically refer to sub-steps 2052, 2053 and 2054, which are not described herein again.

Specifically, the charging data may include the weight of the charging material and the weight of the charging dopant, and further, the weight of the new crystal pulling material and the weight of the repeated crystal pulling material contained in the charging material, generate a charging batching command containing the charging data, and send the command to the charging device.

And 309, finishing the batching operation according to the batching feeding instruction.

This step may be referred to specifically as step 206 above.

In addition, the raw materials gets into the workshop of prepareeing material after, can transport to batching robot through the transmission band and snatch and wait to expect the district, and the sign indicating number device is swept in the transmission band setting, and the raw materials transports to sweeping yard device after, sweeps yard device and sweeps a bar code on the sign indicating number raw materials, can be in order to discern raw materials information in the bar code and transmit the confirming device to the reinforced data of monocrystalline silicon.

At step 310, a charge delivery instruction is generated.

In the step, if the fact that the robot finishes the batching process is detected, a feeding transportation instruction is generated and sent to an AGV trolley in a feeding device.

Specifically, the instructions may include a first code for a loader already loaded with the feed material and the dopant, and a second code for a target single crystal furnace that is required to perform the loading operation.

And 311, completing the transportation operation and the charging operation according to the charging transportation instruction.

In this step, the AGV cart can transport the loader to the target single crystal furnace according to the first code and the second code in the instruction, and finally add the charging raw material and the dopant in the loader to the target single crystal furnace, thereby completing the charging operation.

And step 312, displaying the feeding operation information after the feeding operation is finished.

In this step, after the completion of the charging operation is detected, the charging operation information may be displayed on a personal computer, a mobile terminal, or a display screen connected to the monocrystalline silicon charging data determining device, so that a worker can visually and clearly understand the charging operation process.

Referring to fig. 6, a data configuration diagram of a single crystal silicon charging data determining apparatus in the third embodiment of the present invention is shown, in which a data warehouse in the single crystal silicon charging data determining apparatus may obtain various kinds of operation parameter data of the apparatus from the single crystal furnace, the robot and the AGV, may obtain raw material data and crucible information from the MES and ERP system, and may also obtain display information from the personal computer device, the mobile terminal or the display screen, and store the information in the data warehouse, so that the single crystal silicon charging data determining apparatus may obtain only the operation parameter data, the raw material data and the crucible information from the data warehouse.

In addition, the device for determining monocrystalline silicon feeding data can control the robot and the AGV to work by issuing instructions, and send related data of feeding operation to a Personal Computer (PC), a mobile terminal or a display screen, so that the personal computer, the mobile terminal or the display screen can display feeding operation information.

It should be noted that, for simplicity of description, the method embodiments are described as a series of acts or combination of acts, but those skilled in the art will recognize that the embodiments are not limited by the order of acts described, as some steps may occur in other orders or concurrently depending on the embodiments. Further, those skilled in the art will appreciate that the embodiments described in the specification are presently preferred and that no particular act is required to implement the embodiments of the application.

Example four

Referring to fig. 7, a block diagram of a device for determining monocrystalline silicon charging data in a fourth embodiment of the present invention is shown, which may specifically include:

the first obtaining module 401 is configured to obtain a process step state of the single crystal furnace.

And a second obtaining module 402, configured to obtain the operating parameter data of the single crystal furnace when the process step status is a silicon rod unloading process step.

A first determining module 403, configured to, when it is determined to start a charging operation according to the operation parameter data, obtain information of a crucible in the single crystal furnace and raw material information of raw materials required by the single crystal furnace, and determine charging data according to the information of the crucible, the raw material information, and the operation parameter data.

the first determining module 403 includes:

Optionally, the information of the crucible includes: the type of crucible, the size of the crucible;

the raw material information comprises: the density of the feed material;

the first determination submodule includes:

Optionally, the first determining sub-module may further include:

the second determination submodule includes:

Optionally, the operation parameter data includes: the length of the single crystal silicon rod, the operation time of the single crystal furnace and the pressure in the furnace, and the first determining module 403 comprises:

Optionally, the apparatus further comprises:

Optionally, the apparatus may further include:

In an embodiment of the present invention, an apparatus for determining monocrystalline silicon charging data includes: acquiring the process step state of the single crystal furnace; acquiring operation parameter data of the single crystal furnace under the condition that the process step state is the silicon rod unloading process step; and under the condition that the charging operation is determined to be started according to the operation parameter data, acquiring the information of a crucible in the single crystal furnace and the raw material information of raw materials required by the single crystal furnace, and determining the charging data according to the information of the crucible, the raw material information and the operation parameter data. In the application, when the process step state is the silicon rod unloading process step, the feeding data can be determined through the operation parameter data of the single crystal furnace, the information of the crucible and the raw material information, so that the feeding operation for preparing the monocrystalline silicon is quicker and more accurate, the time for determining the feeding data of the monocrystalline silicon is shortened, and the production efficiency of the monocrystalline silicon is improved.

Fig. 8 is a schematic diagram showing a logical structure of an apparatus for determining single crystal silicon charging data according to an embodiment of the present invention. As shown in fig. 8, an apparatus for determining monocrystalline silicon charging data according to an embodiment of the present invention may include: an interface 41, a processor 42, a memory 43, and a bus 44; the bus 44 is used for realizing connection communication among the interface 41, the processor 42 and the memory 43; the memory 43 stores an executable program, and the processor 42 is configured to execute the executable program stored in the memory 43, so as to implement the steps of the method for determining monocrystalline silicon charging data in fig. 1, fig. 2, or fig. 5, embodiment one, embodiment two, or embodiment three, and achieve the same or similar effects, which is not repeated herein in order to avoid redundancy.

The present invention further provides a computer-readable storage medium, where one or more executable programs are stored, where the one or more executable programs are executable by one or more processors to implement the steps of the method for determining monocrystalline silicon charging data in fig. 1, fig. 2, or fig. 5 according to the first embodiment, the second embodiment, or the third embodiment, and achieve the same or similar effects, and therefore, the description thereof is omitted here for avoiding repetition.

It should be noted that, in this document, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element.

Through the above description of the embodiments, those skilled in the art will clearly understand that the method of the above embodiments can be implemented by software plus a necessary general hardware platform, and certainly can also be implemented by hardware, but in many cases, the former is a better implementation manner. Based on such understanding, the technical solutions of the present invention may be embodied in the form of a software product, which is stored in a storage medium (such as ROM/RAM, magnetic disk, optical disk) and includes instructions for enabling a terminal (such as a mobile phone, a computer, a server, an air conditioner, or a network device) to execute the method according to the embodiments of the present invention.

While the present invention has been described with reference to the embodiments shown in the drawings, the present invention is not limited to the embodiments, which are illustrative and not restrictive, and it will be apparent to those skilled in the art that various changes and modifications can be made therein without departing from the spirit and scope of the invention as defined in the appended claims.

Claims

1. A method for determining single crystal silicon feed data, the method comprising:

acquiring the process step state of the single crystal furnace;

2. The method of claim 1, wherein the loading data comprises: the weight of the raw material to be charged and the weight of the dopant to be charged;

3. The method of claim 2, wherein the information of the crucible comprises: the type of the crucible and the size of the crucible;

the raw material information comprises: the density of the feed material;

4. The method of claim 3,

the raw material information further includes: the resistivity of the single crystal silicon rod, the number of dopant impurity atoms of the raw material, the dopant concentration of the single crystal silicon rod, the impurity concentration of the charging raw material, the segregation coefficient of the dopant, the impurity concentration corresponding to the resistivity of the head of the single crystal silicon rod prepared after the charging operation and the impurity concentration of the dopant;

5. The method of claim 1, wherein the operational parameter data comprises: the length of the single crystal silicon rod, the running time of the single crystal furnace and the pressure in the single crystal furnace;

6. The method of claim 3, wherein after said step of determining the weight of said feed material based on said consumption and the density of said feed material, said method further comprises:

7. The method according to claim 1, wherein after the step of acquiring information on a crucible in the single crystal furnace and raw material information on a raw material required for the single crystal furnace in the case where it is determined to start the charging operation based on the operational parameter data, and determining the charging data based on the information on the crucible, the raw material information, and the operational parameter data, the method further comprises:

8. The method of claim 1, wherein after the step of obtaining the process step status of the single crystal furnace, the method further comprises:

9. An apparatus for determining single crystal silicon charging data, the apparatus comprising:

10. An apparatus for determining single crystal silicon charging data, the apparatus comprising: an interface, a bus, a memory and a processor, wherein the interface, the memory and the processor are connected through the bus, the memory is used for storing an executable program, and the processor is configured to run the executable program to realize the steps of the method for determining monocrystalline silicon charging data according to any one of claims 1 to 8.

11. A computer-readable storage medium, characterized in that the computer-readable storage medium stores thereon an executable program which is executed by a processor to implement the steps of the method for determining single crystal silicon charging data as claimed in any one of claims 1 to 8.