CN114015233B - Polyimide material and preparation method and application thereof - Google Patents
Polyimide material and preparation method and application thereof Download PDFInfo
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- CN114015233B CN114015233B CN202111451693.2A CN202111451693A CN114015233B CN 114015233 B CN114015233 B CN 114015233B CN 202111451693 A CN202111451693 A CN 202111451693A CN 114015233 B CN114015233 B CN 114015233B
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- 229920001721 polyimide Polymers 0.000 title claims abstract description 176
- 239000000463 material Substances 0.000 title claims abstract description 73
- 239000004642 Polyimide Substances 0.000 title claims abstract description 63
- 238000002360 preparation method Methods 0.000 title abstract description 25
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 63
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 56
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 55
- 239000011574 phosphorus Substances 0.000 claims abstract description 55
- 239000009719 polyimide resin Substances 0.000 claims abstract description 49
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 26
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 25
- 239000011231 conductive filler Substances 0.000 claims abstract description 25
- 239000010703 silicon Substances 0.000 claims abstract description 25
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 32
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- RLSSMJSEOOYNOY-UHFFFAOYSA-N m-cresol Chemical compound CC1=CC=CC(O)=C1 RLSSMJSEOOYNOY-UHFFFAOYSA-N 0.000 claims description 4
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- MDTGSTSUJPGOOG-UHFFFAOYSA-N 4-[4,5-dicarboxy-2-(trifluoromethyl)phenyl]-5-(trifluoromethyl)phthalic acid Chemical group C1=C(C(O)=O)C(C(=O)O)=CC(C=2C(=CC(=C(C(O)=O)C=2)C(O)=O)C(F)(F)F)=C1C(F)(F)F MDTGSTSUJPGOOG-UHFFFAOYSA-N 0.000 claims description 3
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- QJIYAHVRWCDLCB-UHFFFAOYSA-N 4-(2-diphenylphosphorylphenoxy)aniline Chemical compound NC1=CC=C(OC2=C(C=CC=C2)P(C2=CC=CC=C2)(C2=CC=CC=C2)=O)C=C1 QJIYAHVRWCDLCB-UHFFFAOYSA-N 0.000 claims description 2
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- NXDMHKQJWIMEEE-UHFFFAOYSA-N 4-(4-aminophenoxy)aniline;furo[3,4-f][2]benzofuran-1,3,5,7-tetrone Chemical compound C1=CC(N)=CC=C1OC1=CC=C(N)C=C1.C1=C2C(=O)OC(=O)C2=CC2=C1C(=O)OC2=O NXDMHKQJWIMEEE-UHFFFAOYSA-N 0.000 description 1
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Images
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- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J5/00—Manufacture of articles or shaped materials containing macromolecular substances
- C08J5/18—Manufacture of films or sheets
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
- C08G73/1057—Polyimides containing other atoms than carbon, hydrogen, nitrogen or oxygen in the main chain
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
- C08G73/1067—Wholly aromatic polyimides, i.e. having both tetracarboxylic and diamino moieties aromatically bound
- C08G73/1071—Wholly aromatic polyimides containing oxygen in the form of ether bonds in the main chain
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2379/00—Characterised by the use of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen, or carbon only, not provided for in groups C08J2361/00 - C08J2377/00
- C08J2379/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
- C08J2379/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2483/00—Characterised by the use of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen, or carbon only; Derivatives of such polymers
- C08J2483/04—Polysiloxanes
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Abstract
The invention relates to the technical field of functional thin film materials, in particular to a polyimide material and a preparation method and application thereof. The polyimide material comprises the following components in parts by weight: 1-40 parts of conductive filler, 1-30 parts of silicon-containing atomic oxygen resisting filler and 30-98 parts of phosphorus-containing polyimide resin. According to the polyimide material, the silicon-containing atomic oxygen resisting filler and the conductive filler are introduced into the phosphorus-containing polyimide resin with intrinsic atomic oxygen resisting property, so that the polyimide material is endowed with excellent atomic oxygen resisting property and antistatic discharge property while the good comprehensive performance of the polyimide material is kept, and the polyimide material can be used in the field of aerospace.
Description
Technical Field
The invention relates to the technical field of functional thin film materials, and particularly relates to a polyimide material and a preparation method and application thereof.
Background
In recent years, the space exploration activities in our country have been increasing and great progress has been made. Among many space activities, a low earth orbit (LEO, with an altitude of 200-1000 km) is one of the most important activity areas, and a space station built in China runs in the orbit area. In the orbital space environment, Atomic Oxygen (AO) is one of the most important and dangerous factors affecting the service life of polymer materials for spacecrafts. Atomic oxygen is oxygen molecules subjected to a wavelength less than 243nm (energy)>5.12eV) and generates molecular bond breaking after being irradiated by solar protons to form a high-energy substance. In an LEO operating aircraft, when the aircraft travels at the operating speed of 7.8km/s, the front surface and atomic oxygen of the aircraft can generate 1012～1016Collision/cm · s. This process generates energy as high as 4.5-5.0 eV, which may cause degradation of the organic material or deterioration of the performance. Meanwhile, when the surface of the spacecraft is irradiated by space plasma environment and sunlight, the spacecraft is made of materialsFactors such as secondary emission characteristics and difference in conductivity can generate unequal surface charges on the surface of the spacecraft, and electrostatic discharge (ESD) can be caused when the electrostatic electric field of the spacecraft exceeds the insulation strength of the polymer. The ESD on the surface of the spacecraft may interfere with the spacecraft electronics and affect scientific measurements, cause spacecraft contamination, and even spurious commands of the navigation system, affecting the survival and life of the spacecraft. To prevent unequal charging of the spacecraft surface and its ESD problems, the surface resistance of the material needs to be less than 1010Ω/□。
The Polyimide (PI) material is a polymer material containing imide rings on a main chain, has the advantages of excellent high temperature resistance, low temperature resistance, high strength and high modulus, high creep resistance, high dimensional stability, radiation resistance, corrosion resistance and the like, and has the characteristics of low vacuum volatile matter, less volatile condensable matter and the like. Due to the excellent comprehensive performance, the polyimide material is widely applied to the space field, and comprises a satellite solar cell substrate, a satellite thermal control felt, an instrument heater, a large solar sail and the like. However, the polyimide material has the problems of being not resistant to atomic oxygen corrosion, good in insulating property, not in line with the requirements of surface electrification protection of the spacecraft and the like when used in a low-earth orbit. The polyimide material is used in the field of spacecraft, and not only needs atomic oxygen resistance and antistatic discharge characteristics, but also has excellent optical performance, mechanical performance and the like. Therefore, how to improve the conductivity of polyimide materials while maintaining the excellent atomic oxygen resistance and other comprehensive properties of polyimide materials is a problem of great attention in spacecraft.
In view of the above, the present invention is particularly proposed.
Disclosure of Invention
The first purpose of the present invention is to provide a polyimide material, so as to solve the problem that the polyimide material in the prior art cannot give consideration to antistatic discharge, atomic oxygen corrosion resistance and other comprehensive properties.
The second object of the present invention is to provide a method for producing the polyimide material.
The third purpose of the invention is to provide the application of the polyimide material in aerospace.
In order to achieve the above purpose of the present invention, the following technical solutions are adopted:
the invention provides a polyimide material, which comprises the following components in parts by weight: 1-40 parts of conductive filler, 1-30 parts of silicon-containing atomic oxygen resisting filler and 30-98 parts of phosphorus-containing polyimide resin.
On the other hand, the invention also provides a preparation method of the polyimide material, which comprises the steps of uniformly mixing the raw materials in an organic solvent and carrying out curing treatment.
In another aspect, the invention also provides the application of the polyimide material in aerospace.
Compared with the prior art, the invention has the beneficial effects that:
according to the polyimide material, the silicon-containing atomic oxygen resisting filler is added into the phosphorus-containing polyimide resin which is intrinsically resistant to atomic oxygen, so that the atomic oxygen resisting performance of the polyimide material can be remarkably improved, the conductivity of the polyimide material can be enhanced on the premise that the atomic oxygen resisting performance and other comprehensive performances of the polyimide material are not remarkably reduced by further adding the conductive filler, and the polyimide material is endowed with the antistatic discharge (ESD) characteristic; the material is used in the field of aerospace, and can avoid the damage of ESD and atomic oxygen to the surface of a spacecraft.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are required to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained according to the drawings without inventive efforts.
FIG. 1 is a 3D graph showing color parameters of polyimide films according to examples 1 to 3 and comparative examples 1 to 3.
FIG. 2 is a histogram of surface resistivity and a histogram of atomic oxygen attack rate for polyimide films of examples 1 to 3 and comparative examples 1 to 3.
Detailed Description
The technical solutions of the present invention will be described clearly and completely with reference to the following detailed description, but those skilled in the art will understand that the following described examples are some, not all, of the examples of the present invention, and are only used for illustrating the present invention, and should not be construed as limiting the scope of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention. The examples, in which specific conditions are not specified, were conducted under conventional conditions or conditions recommended by the manufacturer. The reagents or instruments used are conventional products which are not indicated by manufacturers and are commercially available.
The polyimide material, the preparation method and the application of the polyimide material of the embodiment of the invention are specifically described below.
Some embodiments of the present invention provide a polyimide material, comprising, in parts by weight: 1-40 parts of conductive filler, 1-30 parts of silicon-containing atomic oxygen resisting filler and 30-98 parts of phosphorus-containing polyimide resin.
The polyimide material can be endowed with excellent atomic oxygen resistance by introducing Si and P elements into the polyimide material, and after the material is corroded by atomic oxygen in an atomic oxygen environment, an inorganic silicate protective layer can be generated in situ, so that the polyimide material has the characteristics of self-healing or self-repairing. Meanwhile, the added conductive filler can enhance the conductivity of the polyimide material and endow the polyimide material with the characteristic of electrostatic discharge (ESD).
In order to obtain a polyimide material with more excellent performance, the proportional relation of the above raw materials is optimized, and in some embodiments of the present invention, the polyimide material includes, by weight: 5-20 parts of conductive filler, 15-30 parts of silicon-containing atomic oxygen resisting filler and 50-80 parts of phosphorus-containing polyimide resin.
In some embodiments of the present invention, the phosphorus-containing polyimide resin has the structural formula:
in some embodiments of the present invention, the phosphorus-containing polyimide resin has a number average molecular weight of 100000 to 250000.
In some embodiments of the invention, the conductive filler comprises one or both of graphene and carbon nanotubes; typically, but not by way of limitation, the conductive filler may be graphene, or carbon nanotubes, or a combination of both graphene and carbon nanotubes, wherein the ratio of graphene to carbon nanotubes is 1: 1-20; preferably, the particle size of the conductive filler is 1-15 nm. The conductive filler, the atomic oxygen resisting filler and the polyimide matrix can be uniformly mixed together by using the nanoscale conductive filler, the surface of the film is uniform, the electrostatic discharge characteristic of the film is endowed, the loss of the atomic oxygen resisting performance of the film is avoided, if the particle size of the conductive filler is too large, the atomic oxygen resisting filler is possibly distributed unevenly, and the undercutting effect is generated when the conductive filler collides with atomic oxygen.
In some embodiments of the invention, the silicon-containing atomic oxygen resistant filler comprises a silicon-containing cage polysilsesquioxane, preferably, the silicon-containing cage polysilsesquioxane comprises a trisilanolphenyl cage polysilsesquioxane (TSP-POSS).
The phosphorus-containing polyimide resin has intrinsic atomic oxygen resistance due to phosphorus elements contained in the molecular structure, can generate a protective layer in situ by interacting with atomic oxygen, and silicon elements can play the same role as the phosphorus elements after silicon-containing atomic oxygen resistance filler trisilanol phenyl cage polysilsesquioxane (TSP-POSS) is introduced to form the protective layer to prevent the atomic oxygen from further corroding lower-layer materials, so that the polyimide material is endowed with excellent atomic oxygen resistance; the further introduction of the graphene and/or the carbon nano tube can enhance the electrical conductivity of the polyimide material and endow the polyimide material with the characteristic of electrostatic discharge (ESD). In addition, the added filler can improve the atomic oxygen resistance and the electrical conductivity of the polyimide material, and can not seriously affect other comprehensive properties such as optical property, mechanical property, thermal property and the like of the polyimide material.
In some embodiments of the invention, the polyimide is a polyimideThe atomic oxygen corrosion rate of the material is 0.1X 10-24～0.3×10-24cm3Polyimide material having a surface resistivity of 9X 107～9.5×108Ω/□。
In some embodiments of the invention, the polyimide material comprises a polyimide film.
Some embodiments of the invention also provide a preparation method of the polyimide material, which comprises the steps of uniformly mixing the raw materials in an organic solution, and carrying out curing treatment; preferably, the organic solvent comprises one or more of N, N-dimethylacetamide, N-methylpyrrolidone, and dimethylsulfoxide; preferably, the organic solvent is N, N-dimethylacetamide.
In some embodiments of the present invention, a method for preparing a polyimide material specifically comprises the following steps:
(A) uniformly mixing a composite solution containing silicon-containing antioxidant atom filler and phosphorus-containing polyimide resin with a dispersion solution containing conductive filler to obtain a mixed solution;
(B) and heating the mixed solution to solidify.
In some embodiments of the present invention, the temperature-rising curing includes spreading the mixed solution on the surface of the substrate, and obtaining the polyimide film after the temperature-rising curing.
In some embodiments of the present invention, an organic solution of a phosphorus-containing polyimide resin is mixed with an organic solution in which a silicon-containing atomic oxygen inhibitor filler is dissolved to obtain a composite solution.
In some embodiments of the present invention, a conductive material is dispersed in an organic solvent to obtain a dispersion liquid containing a conductive filler; preferably, the method of dispersion comprises an ultrasonic dispersion method.
In some embodiments of the present invention, in step (a), the mass ratio of the silicon-containing atomic oxygen resistant filler to the phosphorus-containing polyimide resin in the composite solution is 1: 2-6; typically, but not by way of limitation, for example, the mass ratio of the silicon-containing atomic oxygen inhibitor filler to the phosphorus-containing polyimide resin in the composite solution is 1: 1. 1: 2. 1: 3. 1: 4. 1: 5 or 1: 6, and so on.
In some embodiments of the present invention, in the step (a), a ratio of a total mass of the silicon-containing atomic oxygen inhibitor-containing filler and the phosphorus-containing polyimide resin in the mixed solution to a mass of the conductive filler is 6 to 20: 1; typically, but not by way of limitation, for example, the ratio of the total mass of the silicon-containing atomic oxygen resisting filler and the phosphorus-containing polyimide resin in the mixed solution to the mass of the conductive filler is 6: 1. 7: 1. 8: 1. 9: 1. 10: 1. 11: 1. 12: 1. 13: 1. 14: 1. 15: 1. 16: 1. 17: 1. 18: 1. 19: 1 or 20: 1, etc.
In some embodiments of the invention, step (a) is carried out by mixing in a mixing and defoaming machine; and uniformly mixing the mixed solution by adopting a mode of carrying out high-speed rotation on a mixing defoaming machine.
In some embodiments of the present invention, step (B), the elevated temperature curing comprises: preserving heat for 0.5-1.5 h at 70-90 ℃, preserving heat for 0.5-1.5 h at 110-130 ℃, preserving heat for 0.5-1.5 h at 140-160 ℃, preserving heat for 0.5-1.5 h at 170-190 ℃, and preserving heat for 0.5-1.5 h at 220-240 ℃.
In some embodiments of the invention, elevated temperature curing comprises: keeping the temperature at 80 deg.C for 1h, at 120 deg.C for 1h, at 150 deg.C for 1h, at 180 deg.C for 1h, and at 230 deg.C for 1 h.
In some embodiments of the present invention, the mixed solution is placed in a 100-grade clean temperature-programmed drying oven for temperature-rising curing.
In some embodiments of the present invention, in the step (a), the method for preparing the phosphorus-containing polyimide resin comprises the steps of:
reacting a phosphorus-containing aromatic diamine monomer and an aromatic fluorine-containing dianhydride monomer in an aprotic strong polar solvent to obtain a polyamic acid reaction solution;
adding toluene and isoquinoline into the polyamic acid reaction solution to react to obtain the phosphorus-containing polyimide resin.
In some embodiments of the present invention, in the step (a), the method for preparing the phosphorus-containing polyimide resin comprises the steps of:
reacting a phosphorus-containing aromatic diamine monomer and an aromatic fluorine-containing dianhydride monomer in an aprotic strong polar solvent at 20-30 ℃ for 18-24 h to obtain a polyamic acid reaction solution;
adding toluene and isoquinoline into the polyamic acid reaction solution, reacting at 140-150 ℃ for 14-18 h, heating to 170-200 ℃ and reacting for 0.5-1.5 h to obtain polyimide resin solution containing phosphorus;
cooling the phosphorus-containing polyimide resin solution to 50-80 ℃, adding the phosphorus-containing polyimide resin solution into 5-15 mass percent of absolute ethyl alcohol for precipitation, and drying the precipitate to obtain phosphorus-containing polyimide resin; preferably, the drying comprises drying at 20-30 ℃ for 20-30 h, and then vacuum drying at 110-130 ℃ for 20-30 h.
In some embodiments of the invention, the phosphorus-containing aromatic diamine monomer is 2, 5-bis [ (4-aminophenoxy) phenyl ] diphenylphosphine oxide;
and/or the aromatic fluorine-containing dianhydride monomer is 2,2' -bis (trifluoromethyl) -4,4',5,5' -biphenyl tetracarboxylic dianhydride.
In some embodiments of the invention, the aprotic strongly polar solvent comprises one or more of N, N-dimethylacetamide, N-methylpyrrolidone, m-cresol, γ -butyrolactone, and dimethylsulfoxide; preferably, the aprotic strongly polar solvent is N, N-dimethylacetamide.
Also provided in some embodiments of the invention are the use of polyimide materials in aerospace. Preferably, the material is applied to one or more of an outer surface protective material, a thermal control material, a radiation absorbing material and an electromagnetic shielding material of the spacecraft.
The features and properties of the present invention are described in further detail below with reference to examples.
Example 1
The polyimide film provided in this example is a polyimide film containing 10 wt% of graphene and 18 wt% of trisilanolphenyl cage polysilsesquioxane (TSP-POSS).
The preparation method of the polyimide film provided by the embodiment comprises the following steps:
a500 mL three-necked flask equipped with a mechanical stirrer, an electric heating bath, a Dean-Stark trap device, and a nitrogen inlet and outlet was charged with 2, 5-bis [ (4-aminophenoxy) phenyl ] diphenylphosphine (BADPO, 24.6250g, 50mmol) and N, N-dimethylacetamide (DMAc, 120.0g) at room temperature, and stirred under nitrogen to give a homogeneous solution, and then 2,2' -bis (trifluoromethyl) -4,4',5,5' -biphenyltetracarboxylic dianhydride (6FBPDA, 21.5105g, 50mmol) and N, N-dimethylacetamide (DMAc, 64.5g) were added to the solution. The solid content of the reaction mixture was controlled to 20 wt%. The reaction was stirred at 25 ℃ for 20 hours to give a polyamic acid (PAA) reaction solution. To a polyamic acid (PAA) reaction solution were added toluene (100.0g) and isoquinoline (1.0g), and the mixture was heated to 140 ℃ to react for 16 hours. Then the temperature is increased to 180 ℃ to react for 1 h. It was then cooled to 70 ℃. The obtained viscous solution was precipitated into 2L of an aqueous ethanol solution (10 wt%), and the resulting precipitate was dried at 25 ℃ for 24 hours and then vacuum-dried at 120 ℃ for 24 hours to obtain a phosphorus-containing polyimide resin.
10g of phosphorus-containing polyimide resin was dissolved in 40g of N, N-dimethylacetamide, 2.50g of silanol-phenyl cage polysilsesquioxane was dissolved in 10g of N, N-dimethylacetamide, and the two solutions were mixed well under mechanical stirring, and then, the mixture was allowed to stand and defoamed to obtain a composite solution. And ultrasonically dispersing 1.39g of graphene with the particle size of 5nm in 10g of N, N-dimethylacetamide, pouring the liquid solution obtained by dispersion into the composite solution, and uniformly mixing and defoaming by using a uniform mixing and defoaming machine in a high-speed rotation manner to obtain a mixed solution. Coating the mixed solution on a clean glass plate, and placing the glass plate in a 100-grade clean program temperature control drying box at the speed of 80 ℃/1 h; 120 ℃/1 h; 150 ℃/1 h; 180 ℃/1 h; gradually raising the temperature and curing at the temperature of 230 ℃/1h to obtain the polyimide film.
Example 2
The polyimide film provided in this example is a polyimide film containing 10 wt% of carbon nanotubes and 18 wt% of trisilanolphenyl cage polysilsesquioxane (TSP-POSS).
The preparation method of the polyimide film provided by the embodiment comprises the following steps:
the preparation method of the phosphorus-containing polyimide resin was the same as in example 1.
The polyimide film was prepared by referring to example 1, except that graphene was replaced with carbon nanotubes.
Example 3
The polyimide film provided in this example is a polyimide film containing 10 wt% of graphene, 10 wt% of carbon nanotubes, and 16 wt% of trisilanolphenyl cage polysilsesquioxane (TSP-POSS).
The preparation method of the polyimide film provided in this embodiment is as follows:
the preparation method of the polyimide resin containing phosphorus is the same as that of example 1.
10g of phosphorus-containing polyimide resin was dissolved in 38g of N, N-dimethylacetamide, 2.50g of silanol-phenyl cage polysilsesquioxane was dissolved in 10g of N, N-dimethylacetamide, and the two solutions were mixed well under mechanical stirring, and then, the mixture was allowed to stand and defoamed to obtain a composite solution. 1.56g of graphene with the particle size of 5nm and 1.56g of carbon nano tubes with the particle size of 5nm are ultrasonically dispersed in 12g of N, N-dimethylacetamide, then the liquid solution obtained by dispersion is poured into the composite solution, and a uniform mixing defoaming machine is used for carrying out high-speed rotation to uniformly mix and defoam to obtain the mixed solution. Coating the mixed solution on a clean glass plate, and placing the glass plate in a 100-grade clean program temperature control drying box at the speed of 80 ℃/1 h; 120 ℃/1 h; 150 ℃/1 h; 180 ℃/1 h; gradually raising the temperature and curing at the temperature of 230 ℃/1h to obtain the polyimide film.
Example 4
The polyimide film provided by the embodiment is a polyimide film containing 5 wt% of graphene and 30 wt% of trisilanolphenyl cage polysilsesquioxane (TSP-POSS).
The preparation method of the polyimide film provided by the embodiment comprises the following steps:
the preparation method of the phosphorus-containing polyimide resin was the same as in example 1.
The polyimide film was prepared by referring to example 1 except that the mass of graphene was 0.77g and the mass of trisilanolphenyl cage polysilsesquioxane was 4.61 g.
Example 5
The polyimide film provided in this example is a polyimide film containing 40 wt% of graphene and 30 wt% of trisilanolphenyl cage polysilsesquioxane (TSP-POSS).
The preparation method of the polyimide film provided by the embodiment comprises the following steps:
the preparation method of the phosphorus-containing polyimide resin was the same as in example 1.
The polyimide film was prepared by referring to example 1 except that the mass of graphene was 13.33g and the mass of trisilanolphenyl cage polysilsesquioxane was 9.99 g.
Example 6
The polyimide film provided in this example is a polyimide film containing 1 wt% of graphene and 1 wt% of trisilanolphenyl cage polysilsesquioxane (TSP-POSS).
The preparation method of the polyimide film provided by the embodiment comprises the following steps:
the preparation method of the phosphorus-containing polyimide resin was the same as in example 1.
The polyimide film was prepared by referring to example 1 except that the graphene was 0.1g in mass and the trisilanolphenyl cage polysilsesquioxane was 0.1g in mass.
Comparative example 1
The polyimide film provided in this comparative example is a polyimide material containing 20 wt% trisilanolphenyl cage polysilsesquioxane (TSP-POSS).
The preparation method of the polyimide film provided by the comparative example comprises the following steps:
the preparation method of the phosphorus-containing polyimide resin was the same as in example 1.
10g of phosphorus-containing polyimide resin was dissolved in 50g of N, N-dimethylacetamide, 2.5g of silanol-phenyl cage polysilsesquioxane was dissolved in 10g of N, N-dimethylacetamide, and the two solutions were mixed well under mechanical stirring, and then, the mixture was allowed to stand and defoamed to obtain a composite solution. Coating the composite solution on a clean glass plate, and placing the glass plate in a 100-grade clean program temperature control drying box at the speed of 80 ℃/1 h; 120 ℃/1 h; 150 ℃/1 h; 180 ℃/1 h; gradually raising the temperature and curing at the temperature of 230 ℃/1h to obtain the polyimide film.
Comparative example 2
The polyimide film provided in this comparative example was a phosphorus-containing polyimide resin.
The preparation method of the polyimide film provided by the comparative example comprises the following steps:
the preparation method of the phosphorus-containing polyimide resin was the same as in example 1.
Dissolving 10g of phosphorus-containing polyimide resin in 50g of N, N-dimethylacetamide, coating the solution on a clean glass plate, and placing the glass plate in a 100-level clean program temperature control drying oven at the speed of 80 ℃/1 h; 120 ℃/1 h; 150 ℃/1 h; 180 ℃/1 h; gradually raising the temperature and curing at the temperature of 230 ℃/1h to obtain the polyimide film.
Comparative example 3
The polyimide film provided in this comparative example was poly (pyromellitic dianhydride-oxydianiline) (PMDA-ODA, Kapton-type film).
Purchased from Dupont.
Comparative example 4
The polyimide film provided in this comparative example was a polyimide film containing 10 wt% of graphene and 18 wt% of trisilanolphenyl cage polysilsesquioxane (TSP-POSS).
The preparation method of the polyimide film provided by the comparative example comprises the following steps:
the preparation method of the phosphorus-containing polyimide resin was the same as in example 1.
The polyimide film was prepared by referring to example 1 except that the particle size of the graphene was 1 μm.
Comparative example 5
The polyimide film provided in this comparative example was a polyimide film containing 10 wt% of graphene and 18 wt% of trisilanolphenyl cage polysilsesquioxane (TSP-POSS).
The preparation method of the polyimide film provided by the comparative example comprises the following steps:
the polyimide resin containing phosphorus was the polyimide resin obtained in patent CN 109337365B.
The polyimide film was prepared in the same manner as in example 1.
Test examples
Color parameters were evaluated for the polyimide films of examples 1 to 3 and comparative examples 1 to 5. The results of examples 1 to 3 and comparative examples 1 to 3 are shown in FIG. 1, and the values of the color parameters of examples 1 to 3 and comparative examples 1 to 5 are shown in Table 1.
The test method comprises the following steps: the polyimide films of examples 1 to 3 and comparative examples 1 to 5 were tested using a U.S. X-rite Ci7600 spectrophotometer, and then color parameters were calculated according to the CIE Lab formula. L is luminance, where 100 represents white and 0 represents black. and a represents red when the value is positive, and represents green when the value is negative. b indicates yellow when the value is positive and indicates blue when the value is negative. This test allows to obtain the color parameters of the polyimide film.
The polyimide films of examples 1 to 3 and comparative examples 1 to 5 were subjected to thermal property evaluation, and the thermal property data thereof are summarized in table 1.
The test method comprises the following steps: the polyimide films of examples 1 to 3 and comparative examples 1 to 5 were measured using a thermal gravimetric analyzer STA8000 from PerkinElmer, usa, and the rate of temperature rise was: 20 ℃/min and nitrogen atmosphere. This test can yield a 5% weight loss temperature (T) for the polyimide film5％) And (4) data. The polyimide films of examples 1 to 3 and comparative examples 1 to 5 were measured using a TA Q100 model differential scanning calorimeter, and the rate of temperature rise was: 10 ℃/min, nitrogen atmosphere. This test results in the glass transition temperature (T) of the PIg) And (4) data.
The polyimide films of examples 1 to 3 and comparative examples 1 to 5 were evaluated for surface resistivity properties. The results of examples 1 to 3 and comparative examples 1 to 3 are shown in FIG. 2, and the data of the surface resistivity of examples 1 to 3 and comparative examples 1 to 5 are shown in Table 1.
The test method comprises the following steps: the polyimide films of examples 1 to 3 and comparative examples 1 to 5 were tested at room temperature according to GB/T1410-. This test allows the acquisition of surface resistivity data of the polyimide film.
The polyimide films of examples 1 to 3 and comparative examples 1 to 5 were evaluated for atomic oxygen corrosion resistance. The results of examples 1 to 3 and comparative examples 1 to 3 are shown in FIG. 2, and data of atomic oxygen corrosion resistance of examples 1 to 3 and comparative examples 1 to 5 are shown in Table 1.
The test method comprises the following steps: the anti-atomic oxygen performance of the polyimide film is evaluated by eroding the polyimide film by adopting an AO ground simulator, a sample with the size of 2cm multiplied by 2cm is cut out from the prepared polyimide film to carry out an AO ground simulator erosion test, the test is carried out on an electron cyclotron resonance ion source type AO effect simulation device, and the beam density is 3 multiplied by 1015atoms/cm2S, beam energy of 5-10 eV, cumulative atomic oxygen flux of 1.07X 1021atoms/cm2. The atomic oxygen resistance of the polyimide film can be obtained through the test.
TABLE 1
As can be seen from table 1, as can be seen from comparison of the Kapton materials of comparative example 2 and comparative example 3, the polyimide film prepared in comparative example 2 has excellent atomic oxygen resistance, demonstrating that the phosphorus-containing polyimide resin has intrinsic atomic oxygen resistance; as can be seen from comparison of comparative example 1 and comparative example 2, the introduction of the silicon-containing atomic oxygen resisting filler trisilanolphenyl cage polysilsesquioxane (TSP-POSS) further improves the atomic oxygen resistance of the polyimide film; as can be seen from the comparison between example 1 and comparative example 4, the use of the conductive filler in the micron order causes the reduction of the atomic oxygen resistance; as can be seen from the comparison between example 1 and comparative example 5, the use of the phosphorus-containing polyimide resin having a specific structure according to the present invention allows the polyimide film to be prepared with more excellent thermal properties; compared with the comparative examples 1 to 3, the polyimide films prepared in the examples 1 to 3 have excellent atomic oxygen corrosion resistance and greatly reduced surface resistivity, and the addition of the conductive filler can improve the polyimideESD phenomenon of the thin film. Wherein the atomic oxygen etching rate of the polyimide film containing graphene and carbon nanotubes in example 3 is 0.205 × 10-24cm3(atom), 6.8% of the Kapton film prepared in comparative example 3, the surface resistivity of the film was only 9.68X 107Ω/□。
L of the optical properties is the brightness, where 100 denotes white and 0 denotes black. and a represents red when the value is positive, and represents green when the value is negative. b indicates yellow when the value is positive and indicates blue when the value is negative. In example 3, the color parameter of 0 indicates that the film is pure black, and can satisfy some special applications requiring a black film, such as an electromagnetic interference elimination material and a parasitic light absorption material.
In conclusion, TSP-POSS is added into the phosphorus-containing polyimide resin which is intrinsically resistant to atomic oxygen, so that the atomic oxygen resistance of the polyimide film can be remarkably improved, and the conductivity of the film can be enhanced on the premise that the atomic oxygen resistance of the composite film is not remarkably reduced by further adding conductive filler, so that the damage of ESD to spacecraft components is avoided.
The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. A polyimide material is characterized by comprising the following components in parts by weight: 5-20 parts of conductive filler, 15-30 parts of silicon-containing atomic oxygen resisting filler and 50-80 parts of phosphorus-containing polyimide resin;
the structural formula of the phosphorus-containing polyimide resin is as follows:
the number average molecular weight of the phosphorus-containing polyimide resin is 100000-250000;
the conductive filler comprises one or two of graphene and carbon nanotubes;
the silicon-containing atomic oxygen resisting filler comprises silicon-containing cage polysilsesquioxane;
the silicon-containing cage polysilsesquioxane comprises trisilanol phenyl cage polysilsesquioxane.
2. The polyimide material of claim 1, wherein the polyimide material comprises a polyimide film.
3. The method for preparing a polyimide material according to claim 1 or 2, comprising: uniformly mixing all the raw materials in an organic solvent, and curing;
the organic solvent comprises one or more of N, N-dimethylacetamide, N-methylpyrrolidone and dimethylsulfoxide.
4. The method for preparing a polyimide material according to claim 3, comprising the steps of:
(A) uniformly mixing a composite solution containing the silicon-containing anti-oxygen atom filler and the phosphorus-containing polyimide resin with a dispersion liquid containing the conductive filler to obtain a mixed solution;
(B) heating and curing the mixed solution;
and the heating and curing step comprises the steps of spreading the mixed solution on the surface of a substrate, and heating and curing to obtain the polyimide film.
5. The method for producing a polyimide material according to claim 4, wherein in step (A), the mass ratio of the silicon-containing atomic oxygen inhibitor filler to the phosphorus-containing polyimide resin in the composite solution is 1: 2-6;
and/or in the step (A), the ratio of the total mass of the silicon-containing atomic oxygen resisting filler and the phosphorus-containing polyimide resin in the mixed solution to the mass of the conductive filler is 6-20: 1.
6. the method for preparing polyimide material according to claim 4, wherein in the step (A), the mixing comprises using a mixing defoaming machine;
in the step (B), the temperature-increasing curing includes: preserving heat for 0.5-1.5 h at 70-90 ℃, preserving heat for 0.5-1.5 h at 110-130 ℃, preserving heat for 0.5-1.5 h at 140-160 ℃, preserving heat for 0.5-1.5 h at 170-190 ℃, and preserving heat for 0.5-1.5 h at 220-240 ℃.
7. The method for producing a polyimide material according to claim 4, wherein in the step (A), the method for producing the phosphorus-containing polyimide resin comprises the steps of:
reacting a phosphorus-containing aromatic diamine monomer and an aromatic fluorine-containing dianhydride monomer in an aprotic strong polar solvent to obtain a polyamic acid reaction solution;
and adding toluene and isoquinoline into the polyamic acid reaction solution to react to obtain the phosphorus-containing polyimide resin.
8. The method for preparing a polyimide material according to claim 7, wherein the phosphorus-containing aromatic diamine monomer is 2, 5-bis [ (4-aminophenoxy) phenyl ] diphenylphosphineoxide;
and/or the aromatic fluorine-containing dianhydride monomer is 2,2' -bis (trifluoromethyl) -4,4',5,5' -biphenyl tetracarboxylic dianhydride;
the aprotic highly polar solvent comprises one or more of N, N-dimethylacetamide, N-methylpyrrolidone, m-cresol, gamma-butyrolactone and dimethyl sulfoxide.
9. The method for preparing a polyimide material according to claim 8, wherein the aprotic highly polar solvent is N, N-dimethylacetamide.
10. Use of a polyimide material according to claim 1 or 2 in aerospace.
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