CN114014295B - Mask device and method for controlling local roughness of surface of high-density carbon hollow microsphere - Google Patents
Mask device and method for controlling local roughness of surface of high-density carbon hollow microsphere Download PDFInfo
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- CN114014295B CN114014295B CN202111419010.5A CN202111419010A CN114014295B CN 114014295 B CN114014295 B CN 114014295B CN 202111419010 A CN202111419010 A CN 202111419010A CN 114014295 B CN114014295 B CN 114014295B
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/05—Preparation or purification of carbon not covered by groups C01B32/15, C01B32/20, C01B32/25, C01B32/30
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E30/00—Energy generation of nuclear origin
- Y02E30/10—Nuclear fusion reactors
Abstract
The invention discloses a mask device for controlling the surface local roughness of a high-density carbon hollow microsphere and an application method thereof, wherein the mask device comprises the following steps: a mask middle section, on which a tapered hole for accommodating the HDC hollow microsphere is arranged; the quartz plate is arranged above the middle section of the mask, and mask holes are formed in the quartz plate; an elastic film arranged below the middle section of the mask to flexibly support the HDC hollow microspheres; and the middle section of the mask, the quartz plate and the elastic film are packaged through the base and the upper cover which are matched. The invention provides a mask device for controlling the local roughness of the surface of an HDC hollow microsphere and an application method thereof, which can protect other regions of the HDC hollow microsphere except a bonding region in the surface etching process, only improve the roughness of the bonding region to a sub-micron order, and simultaneously obtain a clean fresh surface, thereby improving the bonding performance, realizing the good sealing of the HDC hollow microsphere, and further fixing the microsphere in the subsequent process.
Description
Technical Field
The invention belongs to the field of carbon material processing and forming, and particularly relates to a mask device for controlling the surface local roughness of a high-density carbon hollow microsphere and a method for improving the gas packaging tightness of the microsphere by locally etching the microsphere by using the mask device.
Background
In recent years, advanced countries such as the United states adopt high-density carbon (HDC) hollow microspheres as target pellets of Inertial Confinement Fusion (ICF) to obtain attractive experimental results, so that the HDC hollow microspheres are more and more attracted by the current ICF research and have potential application prospects in ICF energy targets. The fuel gas for ICF is typically deuterium, tritium or a mixture of deuterium and tritium. One method of injecting fuel gas into the HDC hollow microspheres is to place the microspheres with gas-filled pores into a gas-filled chamber and complete the filling of the HDC hollow microspheres and the sealing of the gas-filled pores by a gas encapsulation process. The air charging hole is sealed and bonded by adopting an adhesive, and the ICF target has high requirements on the air tightness of the HDC hollow microsphere air charging hole in the preparation and use processes. The HDC pellets are polished prior to perforation, but the smooth surface has a relatively small bonding area and is detrimental to the bonding by reducing the "pinning effect" which deteriorates the sealing of the HDC pellets.
The surface roughness of the HDC hollow microsphere can be improved by adopting a surface etching processing technology. However, methods such as molten salt etching, solid phase etching under catalyst catalysis, or gas-solid phase hybrid etching are generally performed at high temperature, and the HDC hollow microspheres often need to be cleaned after etching. The methods of laser etching, microwave-assisted reactive ion etching, electron cyclotron resonance discharge reactive ion etching and the like have high requirements on equipment. In general, a surface roughness of the order of micrometers significantly improves adhesion performance, but adversely affects symmetry, stability, and the like of interest in ICF experiments.
Disclosure of Invention
An object of the present invention is to solve at least the above problems and/or disadvantages and to provide at least the advantages described hereinafter.
To achieve these objects and other advantages and in accordance with the purpose of the invention, there is provided a mask device for controlling local roughness of a surface of a high-density carbon hollow microsphere, comprising:
the mask middle section is provided with a tapered hole for accommodating the HDC hollow microsphere;
the quartz plate is arranged above the middle section of the mask, and mask holes for exposing the local parts of the HDC hollow microspheres outside are formed in the quartz plate;
an elastic film arranged below the middle section of the mask to flexibly support the HDC hollow microspheres;
and the middle section of the mask, the quartz plate and the elastic film are packaged through the base and the upper cover which are matched with each other.
Preferably, the opposite surfaces of the base and the upper cover are respectively provided with matched annular bosses so as to construct a clamping part of the middle section of the mask in space;
wherein, the outer side of the annular boss of the upper cover is provided with an annular groove for accommodating a PTFE gasket;
the outer side of the middle section of the mask is provided with a protruding part matched with the annular boss, and the base, the upper cover and the middle section of the mask are integrally packaged through matched threaded holes and screws.
Preferably, the bottom surface angle of the tapered hole is configured to be 45 ° to 75 °.
Preferably, when the height of the tapered hole is defined as h, the diameter of the HDC hollow microsphere is d ≧ h +100 μm, and the amount of deformation Δ of the elastic membrane satisfies Δ = d-h.
Preferably, the base, the middle section of the mask and the upper cover are all made of aluminum alloy materials.
Preferably, the diameter of the mask aperture is configured to be larger than a target value of a spot size;
the mask hole is approximately concentric with the projection of the smaller diameter end of the tapered hole, and the concentricity deviation is not more than 5 mu m.
A method for applying a device for controlling the local roughness of the surface of a high-density carbon hollow microsphere comprises the following steps:
the method comprises the following steps that firstly, high-density carbon HDC hollow microspheres to be etched are limited through a mask device, and parts to be etched are exposed outside;
placing the mask device filled with the HDC hollow microspheres into a reactive ion etching machine to etch the exposed surfaces of the HDC hollow microspheres;
step three, after the etching is finished, taking out the mask device filled with the HDC hollow microspheres so as to process air filling holes on the exposed surfaces of the HDC hollow microspheres;
and step four, placing the mask device with the processed inflation holes into an inflation cabin to complete inflation and micropore sealing of the HDC hollow microspheres.
Preferably, in the mask device, the middle section of the mask, the PTFE washer, the quartz plate and the upper cover form an upper half section of the mask, and the base and the elastic film form a lower half section of the mask;
in the first step, the HDC hollow microspheres are limited by a mask device, and the method comprises the following steps:
s10, assembling the upper half section of the mask device through screws, keeping the large-diameter end of the conical hole downward in the assembling process, processing a mask hole concentric with the projection of the small-diameter end of the conical hole on a quartz plate by adopting femtosecond laser, removing cut quartz and cleaning processing residues;
s11, turning over the upper half section of the assembled mask device to enable the end, with the large diameter, of the conical hole in the middle section of the mask device to face upwards; placing the outer HDC hollow microspheres into the tapered holes so that the HDC hollow microspheres fall into the small holes at the bottoms of the tapered holes under the action of gravity;
s12, placing the disk-shaped elastic film above the conical hole and the microsphere in the middle section of the mask, and assembling the base by using screws to complete structural fixation and limit the HDC hollow microsphere.
Preferably, in the second step, the method of performing reactive ion etching by a reactive ion etcher is configured to include:
s20, opening the reactive ion etching machine to enable the equipment to be in a standby state;
s21, placing at least one mask device with HDC hollow microspheres in a reactive ion etching machine;
s22, setting the etching power of the reactive ion etching machine to be 200w-500w, introducing oxygen into equipment after vacuumizing is completed, configuring the flow rate of the oxygen to be 100-400sccm, and etching for 2-10min;
s23, after the reactive ion etching is finished, pumping out residual gas in the equipment cavity through a vacuum pump, and introducing inert gas until the internal pressure and the external pressure of the equipment cavity are equal and the cabin door can be opened;
and S24, taking out the mask device, and completing the local surface reactive ion etching of the HDC hollow microspheres.
Preferably, the method further comprises:
and step five, after the aeration and micropore sealing of the HDC hollow microspheres are finished, taking out the mask device, detaching the screws on the base to separate the base and the elastic film from the upper half section of the mask device, and further taking out the HDC hollow microspheres to finish parameter detection and integral target assembly.
The invention at least comprises the following beneficial effects: the invention provides a mask device for controlling the local roughness of the surface of an HDC hollow microsphere and an application method thereof, which can protect other regions of the HDC hollow microsphere except for a bonding region in surface etching, gas filling hole processing and subsequent processes, only improve the roughness of the bonding region to a sub-micron order, and simultaneously obtain a clean fresh surface, thereby improving the bonding performance and realizing good sealing of the HDC hollow microsphere.
Additional advantages, objects, and features of the invention will be set forth in part in the description which follows and in part will become apparent to those having ordinary skill in the art upon examination of the following or may be learned from practice of the invention.
Drawings
FIG. 1 is a schematic view of an exploded structure of a mask assembly according to an embodiment of the present invention;
FIG. 2 is a schematic cross-sectional view of a mask assembly according to another embodiment of the present invention;
FIG. 3 is an enlarged schematic view of the dotted line in FIG. 2;
FIG. 4 is an enlarged schematic view of a dotted line shown in FIG. 3;
FIG. 5 is a schematic diagram illustrating the assembled mask assembly of the present invention.
Detailed Description
The present invention is further described in detail below with reference to the attached drawings so that those skilled in the art can implement the invention by referring to the description text.
It will be understood that terms such as "having," "including," and "comprising," as used herein, do not preclude the presence or addition of one or more other elements or groups thereof.
It is to be understood that in the description of the present invention, the terms indicating orientation or positional relationship are based on the orientation or positional relationship shown in the drawings, and are used only for convenience in describing the present invention and for simplification of the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present invention.
In the description of the present invention, it should be noted that, unless otherwise specifically stated or limited, the terms "mounted," "disposed," "sleeved/connected," "connected," and the like, should be construed broadly, such as "connected," which may be fixedly connected, detachably connected, or integrally connected, mechanically connected, electrically connected, directly connected, indirectly connected through an intermediate medium, or connected between two elements.
Fig. 1 to 5 show an implementation form of a mask device for controlling the local roughness of the surface of the high-density carbon hollow microsphere according to the present invention, which comprises:
the mask middle section 1 is provided with a tapered hole 3 for accommodating the HDC hollow microsphere 2, the hollow microsphere is matched through the height of the mask middle section in space, and the position of the hollow microsphere is further limited through the tapered hole;
the quartz plate 4 is arranged above the middle section of the mask, the quartz plate is provided with a mask hole 5 which exposes the local part of the HDC hollow microsphere outside, the smaller end of the conical hole is communicated with the outside through the mask hole on the quartz plate, and then the local part of the hollow microsphere is exposed outside so as to be matched with external etching equipment, so that the etching operation on the local part of the surface of the hollow microsphere is realized, other surfaces of the hollow microsphere are protected through the middle section of the mask and the quartz plate and are not subjected to the etching action, the submicron-scale roughness is obtained, the bonding area is increased, the bonding strength of the adhesive is favorably improved through a pinning effect, meanwhile, a clean and fresh surface can be obtained, and the sealing property and the bonding compactness of the HDC target pill are improved;
the elastic film 6 is arranged below the middle section of the mask to flexibly support the HDC hollow microspheres and is used for flexibly supporting the hollow microspheres, and due to the design of the elastic material, the elastic film can have elastic expansion allowance and can be matched with the HDC hollow microspheres with rated sizes, so that the mask has better adaptability;
the middle section of the mask, the quartz plate and the elastic film are packaged through the base 7 and the upper cover 8 which are matched with each other, a through hole 16 which is basically concentric with the mask hole and has a diameter larger than that of the mask hole is arranged above the upper cover, so that the mask hole can be fully exposed outside in later etching and other processes, and in actual application, the volume of the mask device is as small as possible, so that a plurality of HDC hollow microspheres (target pellets) can be etched simultaneously when a cavity of the reactive ion etching equipment is small.
In another embodiment, as shown in fig. 1-2, on the opposite surfaces of the base and the upper cover, there are respectively provided with matched annular bosses 9 to spatially construct a clamping portion 10 of the middle section of the mask;
wherein, an annular groove 12 for accommodating a PTFE gasket 11 is arranged outside the annular boss of the upper cover;
the mask middle section outside is provided with the protruding part 13 with annular boss matched with, the base, the upper cover, the mask middle section is through the integrative encapsulation of matched with screw hole 14, screw 15, in this kind of structure, through the effect of annular boss, make the base, the contact position of upper cover and mask middle section can be injectd, area of contact can be controlled, carry out the centre gripping with the mask middle section in the space and injectd, guarantee structure complex stability, the elastic film of being convenient for simultaneously has flexible space, and the effect of PTFE packing ring lies in guaranteeing the inside gas tightness of mask device, and then make it in sculpture or subsequent inflation link, guarantee that sealing performance satisfies the processing needs, the effect of protruding part lies in being convenient for to interfere each other between the structure, provide the position of processing screw hole simultaneously, cooperation screw is fixed base, the upper cover respectively with the mask middle section.
In another embodiment, the bottom surface angle of the tapered hole is set to 45 ° -75 °, and the height of the tapered hole is defined as h, then the diameter of the HDC hollow microsphere is d ≧ h +100 μm, and the height of the tapered hole at the middle section of the mask is slightly less than the outer diameter of the HDC hollow microsphere, and the difference between the two should be within the deformation range of the elastic membrane. In view of processing and measurement errors, it is recommended that the difference between the height of the tapered holes and the outer diameter of the microspheres be 100 μm or more. The lower surfaces of the HDC hollow microspheres are supported by the elastic film, and the upper surfaces of the microspheres are in contact with the quartz plate through the tension of the deformed film. The conical holes, the quartz plate and the elastic film play a role in fixing the HDC hollow microspheres, so the bottom surface angle of the conical holes is not suitable to be too small, and is recommended to be 45-75 degrees. The diameter of the tapered holes is determined by the outer diameter and the base angle of the HDC hollow microspheres.
And the elastic film should have a certain thickness and rigidity to be self-supporting and easy to handle. The thickness of the film can be determined according to the elasticity of the film, the film with larger elasticity can be selected to be thicker, and the film with smaller elasticity can be selected to be thinner. The minimum value Δ of the amount of deformability of the elastic membrane should satisfy: Δ = outer diameter of HDC hollow microsphere-height of the tapered pore. Suggested elastic films include polyethylene films, natural or nitrile rubber films, polyvinyl butyral films, and the like.
In another embodiment, the base, the middle mask section and the upper cover are all made of aluminum alloy materials, and the screw is made of oxidation-resistant materials so as to guarantee the service life and the structural stability under specific environments.
In another embodiment, the diameter of the mask holes should be slightly larger than the target value of the size of the glue spots, typically 60-100 μm; the mask hole and the projection of the end with the small diameter of the conical hole on the middle section of the mask are concentric, the deviation is not more than 5 mu m, the size of the mask hole is limited, so that certain operation allowance is provided during local operation, and meanwhile, the concentric operation can also ensure that the processing precision meets the requirement.
An etching method for improving and controlling the local surface roughness of HDC hollow microspheres and simultaneously obtaining clean fresh surfaces comprises the following steps:
the method comprises the following steps that firstly, high-density carbon HDC hollow microspheres to be etched are limited through a mask device, and parts to be etched are exposed outside;
placing the mask device filled with the HDC hollow microspheres into a reactive ion etching machine, operating a reactive ion etching program by using oxygen as process gas, and etching the exposed surfaces of the HDC hollow microspheres, wherein the radio frequency power supply frequency of the reactive ion etching equipment is 13.56MHz in actual application; the purity of oxygen is recommended to be not less than 99% (when the purity is lowered, it is not favorable for obtaining a rough surface), and the flow rate of oxygen, etching time, power, etc. are related to the frequency, model, specification, etc. of the reactive ion etching equipment, and when other equipment is used, the above process parameters may be greatly different from those listed in the present invention, and the reactive ion etching in this step comprises the steps of:
d1. opening the reactive ion etching machine to enable the equipment to be in a standby state;
d2. placing a mask device with HDC hollow microspheres in a reactive ion etching machine; a plurality of mask devices can be placed at the same time to process a plurality of microspheres;
d3. setting the etching power to be 200w-500 w; vacuumizing according to the requirement of an equipment operation specification, and then introducing oxygen into the equipment, wherein the flow rate of the oxygen is 100-400 sccm; the etching time is 2 min-10 min.
d4. After the reactive ion etching is finished, pumping out residual gas in the equipment cavity through a vacuum pump, and introducing inert gas such as nitrogen or argon until the internal and external pressures of the equipment cavity are equal and the cabin door can be opened;
d5. taking out the mask device to complete the local surface reactive ion etching of the HDC hollow microspheres;
step three, after the etching is finished, taking out the mask device with the HDC hollow microspheres, entering a laser processing gas filling hole procedure, and processing gas filling holes at the exposed surfaces of the HDC hollow microspheres;
step four, after the processing of the air charging hole is finished, the mask device filled with the HDC hollow microspheres is placed in an air charging cabin and enters a gas packaging process, and the air charging and micropore sealing of the HDC hollow microspheres are finished;
and step five, after the aeration and micropore sealing of the HDC hollow microspheres are completed, taking out the mask device, overturning and placing the mask device to enable the base to be on the upper part, then taking down the screws on the base, sequentially taking down the base and the elastic film to separate the base and the elastic film from the upper half section of the mask device, further taking out the HDC hollow microspheres, and carrying out subsequent procedures such as parameter detection, integral target assembly and the like.
In another embodiment, in the step one, the step of defining the HDC hollow microspheres by a mask device comprises the steps of:
s1, firstly assembling the upper half section of the mask device through a screw, keeping the large end of the conical hole downward in the assembling process, then processing a mask hole concentric with the small end of the conical hole in diameter projection on a quartz plate by adopting femtosecond laser, removing cut quartz and cleaning processing residues, wherein the step can also be called mask preparation, and the upper half section of the mask sequentially comprises the following steps of: the middle section of the mask (the end with the large diameter of the taper hole is downward), the PTFE washer, the quartz plate and the upper cover are fixed by screws, the mask hole is processed on the quartz plate by femtosecond laser (the cut quartz is removed and processing residues are cleaned), when the mask device is actually used, the upper half section of the mask device with the mask hole can be repeatedly used, and only when a damaged or polluted part (usually the quartz plate) is replaced, the mask device needs to be disassembled. After the upper half section of the mask device is disassembled, the quartz plate must be replaced and the mask holes are processed again by femtosecond laser;
s2, turning over the upper half section of the assembled mask device to enable the end, with the large diameter, of the conical hole in the middle section of the mask to face upwards; placing the outer HDC hollow microspheres into the tapered hole so that the HDC hollow microspheres fall into the small hole at the bottom of the tapered hole under the action of gravity;
s3, placing the disk-shaped elastic film above the conical hole and the microspheres in the middle section of the mask by using tweezers, assembling the base, and fixing by using screws to finish the limitation of the HDC hollow microspheres; the assembled mask assembly is then turned over so that the base is on the lower side and the exposed microsphere surface is on the upper side.
The invention adopts oxygen plasma generated by radio frequency reactive ion etching equipment to perform Reactive Ion Etching (RIE) on the HDC surface exposed below the mask, namely, the oxygen plasma and the HDC surface exposed below the mask are subjected to oxidation reaction, the generated carbon oxide is pumped by a vacuum pump, and the protected area is not etched. The roughness of the submicron order can be obtained through the process, so that the bonding area is increased, the bonding strength of the adhesive is improved through the pinning effect, and a clean fresh surface can be obtained, so that the sealing property and the bonding firmness of the HDC target pellets are improved. The etching process maintains the smoothness of the non-bonded area, so that important indexes such as the symmetry and the stability of the ICF cannot be influenced. The mask device and the surface etching method are simple to operate and wide in application range, and are beneficial to improving the sealing property of the HDC hollow microspheres. For improving and controlling the surface local roughness of the microsphere made of other materials, the mask device and the etching method are also applicable as long as the microsphere material has a nano or micron crystal structure and can perform an oxidation reaction with oxygen plasma.
Example 1:
the embodiment comprises the following steps:
1. a mask is prepared. Assembling the upper half section of the mask device according to the attached figure 1 of the specification, and sequentially comprising the following steps from bottom to top: the middle section of the mask (the end with the large diameter of the taper hole faces downwards), a PTFE gasket, a quartz plate and an upper cover are fixed by screws. And then processing mask holes on the quartz plate by adopting femtosecond laser. The target value of the glue spot diameter of the HDC hollow microspheres in this example is no more than 30 microns, so the target diameter of the mask holes was set to 60 ± 5 microns according to previous process experience. The cut quartz is removed and the process residue is cleaned. The mask hole and the projection of the end with the small diameter of the conical hole on the middle section of the mask are concentric, and the deviation between the centers of the two holes is about 4 mu m when measured under an optical microscope.
2. Turning over the upper half section of the assembled mask device to enable the end with the large diameter of the conical hole in the middle section of the mask to face upwards; putting HDC hollow microspheres with the outer diameter of 1000 microns into the tapered holes, wherein the microspheres automatically reach the small holes at the bottom under the action of gravity;
3. placing a disk-shaped preservative film (polyethylene film) above the tapered hole and the microsphere in the middle section of the mask by using tweezers, assembling a base, and fixing by using screws; then, turning over the assembled mask device to enable the base to be located at the lower part and the exposed surface of the microsphere to be located at the upper part;
4. the mask device with the HDC hollow microspheres is placed in a reactive ion etching machine with the frequency of a radio frequency power supply of 13.56MHz, oxygen is used as process gas, a reactive ion etching program is operated, and the exposed surfaces of the HDC hollow microspheres are etched. The technological parameters of the reactive ion etching are as follows: the purity of the oxygen is 99 percent, and the etching power is 200w; vacuumizing according to the requirement of an equipment operation instruction, and then introducing oxygen into the equipment, wherein the oxygen flow rate is 100sccm; etching time is 10min; after the etching program is finished, pumping out residual gas in the equipment cavity through a vacuum pump, introducing nitrogen until the pressure inside and outside the equipment cavity is equal and the cabin door can be opened, taking out the mask device, and finishing the local surface etching of the HDC hollow microspheres;
5. taking out the mask device with the HDC hollow microspheres, entering a laser processing inflation hole procedure, and processing inflation holes on the exposed surfaces of the HDC hollow microspheres; then placing the mask device filled with the HDC hollow microspheres into an inflation cabin, and performing a gas packaging process to complete inflation of the HDC hollow microspheres and sealing of inflation holes;
6. taking out the mask device with the HDC hollow microspheres, turning over and placing the mask device to enable the base to be on the upper portion, taking down the screws on the base, and sequentially taking down the base and the elastic film; and finally, taking out the HDC hollow microspheres, and performing subsequent procedures such as parameter detection, integral target assembly and the like.
The sealing test result shows that the room temperature leakage rate of the HDC hollow microspheres is 1.9310 after the air charging holes are sealed -6 Pa.L/s, and meets the ICF experiment requirements.
Example 2:
example 2 the procedure of example 1 was essentially the same, with the primary differences being that the HDC hollow microspheres had an outer diameter of 1200 microns, the target spot diameter was no more than 40 microns, and the mask holes had diameters of 70 ± 5 microns; the elastic film adopts a polyvinyl butyral film with the thickness of 30 microns; the technological parameters of the reactive ion etching are as follows: the purity of the oxygen is 99 percent, and the etching power is 400w; etching time is 5min; a vacuum was applied as required by the equipment operating instructions and oxygen was then passed into the equipment at a flow rate of 200sccm.
The sealing test result shows that the room temperature leak rate of the HDC hollow microspheres is 3.2310 after the air charging holes are sealed -6 Pa.L/s, and meets the ICF experiment requirements.
Example 3:
example 3 the procedure of example 1 is essentially the same, with the main differences being that the HDC hollow microspheres have an outer diameter of 2000 microns, the target value for the speck diameter is no more than 60 microns, and the mask holes have a diameter of 90 ± 5 microns; the elastic film is a nitrile rubber film (cut from a nitrile rubber glove); the technological parameters of the reactive ion etching are as follows: the purity of the oxygen is 99%, and the etching power is 500w; etching time is 2min; a vacuum was applied as required by the equipment operating instructions and oxygen was then passed into the equipment at a flow rate of 400sccm.
The sealing test result shows that the room temperature leak rate of the HDC hollow microspheres is 2.7310 after the gas filling holes are sealed -6 Pa.L/s, and meets the ICF experiment requirements.
In practical application, the sealing performance after gas encapsulation is one of key performance indexes of the HDC hollow microsphere, and in each link in the actual inflation hole sealing operation, the control of the local roughness of the surface of the HDC hollow microsphere and the simultaneous obtaining of a clean fresh surface are one of important links influencing the sealing performance, so that the sealing performance can be effectively ensured to meet the use requirement by improving the local roughness of the surface of the HDC hollow microsphere, the roughness of other parts shielded by a mask device is hardly influenced, and the product performance meets the use requirement.
The above scheme is merely illustrative of a preferred example, and is not limiting. When the invention is implemented, appropriate replacement and/or modification can be carried out according to the requirements of users.
The number of apparatuses and the scale of the process described herein are intended to simplify the description of the present invention. Applications, modifications and variations of the present invention will be apparent to those skilled in the art.
While embodiments of the invention have been disclosed above, it is not intended that they be limited to the applications set forth in the specification and examples. It can be applied to all kinds of fields suitable for the present invention. Additional modifications will readily occur to those skilled in the art. Therefore, the invention is not to be limited to the specific details and illustrations shown and described herein, without departing from the general concept as defined by the claims and their equivalents.
Claims (6)
1. A mask device for controlling local roughness of the surface of a high-density carbon hollow microsphere is characterized by comprising:
a mask middle section, on which a tapered hole for accommodating the HDC hollow microsphere is arranged;
the quartz plate is arranged above the middle section of the mask, and mask holes for exposing the local parts of the HDC hollow microspheres outside are formed in the quartz plate;
an elastic film arranged below the middle section of the mask to flexibly support the HDC hollow microspheres;
the middle section of the mask, the quartz plate and the elastic film are packaged through the base and the upper cover which are matched with each other;
the method for applying the mask device for controlling the local roughness of the surface of the high-density carbon hollow microsphere comprises the following steps of:
step one, limiting the high-density carbon HDC hollow microspheres to be etched through a mask device, and exposing the parts to be etched outside;
placing the mask device filled with the HDC hollow microspheres into a reactive ion etching machine to etch the exposed surfaces of the HDC hollow microspheres;
step three, after the etching is finished, taking out the mask device filled with the HDC hollow microspheres to process air filling holes on the exposed surfaces of the HDC hollow microspheres;
step four, the mask device with the processed inflation holes is placed in an inflation cabin to complete inflation and micropore sealing of the HDC hollow microspheres;
the bottom surface angle of the conical hole is configured to be 45-75 degrees;
defining the height of the tapered hole as h, wherein the diameter d of the HDC hollow microsphere is more than or equal to h +100 mu m, and the deformation delta of the elastic film satisfies delta = d-h;
the diameter of the mask aperture is configured to be greater than a target value for a glue spot size;
the mask hole is approximately concentric with the projection of the smaller diameter end of the tapered hole, and the concentricity deviation is not more than 5 mu m.
2. The mask device for controlling the local roughness of the surface of the high-density carbon hollow microsphere as claimed in claim 1, wherein, the opposite surfaces of the base and the upper cover are respectively provided with matched annular bosses so as to construct a clamping part at the middle section of the mask in space;
wherein, the outer side of the annular boss of the upper cover is provided with an annular groove for accommodating a PTFE gasket;
the outer side of the middle section of the mask is provided with a protruding part matched with the annular boss, and the base, the upper cover and the middle section of the mask are integrally packaged through matched threaded holes and screws.
3. The mask device for controlling the local roughness of the surface of the high-density carbon hollow microsphere as claimed in claim 1, wherein the base, the middle section of the mask and the upper cover are all made of aluminum alloy materials.
4. The mask device for controlling the local roughness of the surface of the high-density carbon hollow microsphere as claimed in claim 1, wherein in the mask device, the middle mask segment, the PTFE gasket, the quartz plate and the upper cover form the upper mask half segment, and the base and the elastic membrane form the lower mask half segment;
in step one, the definition of the HDC hollow microspheres by the masking means comprises the steps of:
s10, assembling the upper half section of the mask device through screws, keeping the large-diameter end of the conical hole downward in the assembling process, processing a mask hole concentric with the projection of the small-diameter end of the conical hole on a quartz plate by adopting femtosecond laser, removing cut quartz and cleaning processing residues;
s11, turning over the upper half section of the assembled mask device to enable the end, with the large diameter, of the conical hole in the middle section of the mask to face upwards; putting the HDC hollow microspheres into the tapered hole, so that the HDC hollow microspheres fall into the small hole at the bottom of the tapered hole under the action of gravity;
s12, placing the disk-shaped elastic film above the conical hole and the microsphere in the middle section of the mask, and assembling the base by using screws to complete structural fixation and limit the HDC hollow microsphere.
5. The mask device for controlling the local roughness of the surface of the high-density carbon hollow microsphere as claimed in claim 1, wherein in the second step, the method for performing the reactive ion etching by the reactive ion etcher is configured to comprise:
s20, opening the reactive ion etching machine to enable the equipment to be in a standby state;
s21, placing at least one mask device with HDC hollow microspheres in a reactive ion etching machine;
s22, setting the etching power of the reactive ion etching machine to be 200W-500W, introducing oxygen into equipment after vacuumizing is completed, configuring the flow rate of the oxygen to be 100-400sccm, and etching for 2-10min;
s23, after the reactive ion etching is finished, pumping out residual gas in the equipment cavity through a vacuum pump, and introducing inert gas until the internal pressure and the external pressure of the equipment cavity are equal and the cabin door can be opened;
and S24, taking out the mask device, and completing the local surface reactive ion etching of the HDC hollow microspheres.
6. The mask apparatus for controlling the local roughness of the surface of the high-density hollow carbon microspheres as claimed in claim 1, further comprising:
and step five, after the aeration and micropore sealing of the HDC hollow microspheres are finished, taking out the mask device, detaching the screws on the base to separate the base and the elastic film from the upper half section of the mask device, and further taking out the HDC hollow microspheres to finish parameter detection and integral target assembly.
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| CN202111419010.5A CN114014295B (en) | 2021-11-26 | 2021-11-26 | Mask device and method for controlling local roughness of surface of high-density carbon hollow microsphere |
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| CN202111419010.5A CN114014295B (en) | 2021-11-26 | 2021-11-26 | Mask device and method for controlling local roughness of surface of high-density carbon hollow microsphere |
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| CN114014295B true CN114014295B (en) | 2023-01-13 |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101105636A (en) * | 2002-02-22 | 2008-01-16 | Asml控股股份有限公司 | System and method for using a two part cover for protecting a reticle |
| CN102586890A (en) * | 2012-03-20 | 2012-07-18 | 北京大学 | Device for preparing black silicon |
| CN102664054A (en) * | 2012-05-10 | 2012-09-12 | 深圳大学 | X-ray absorption grate manufacturing method and filling device thereof |
| CN205879358U (en) * | 2015-05-26 | 2017-01-11 | 柯尼卡美能达株式会社 | Combination, color measurement meter and mask of total mark ball and mask |
| CN107817653A (en) * | 2017-12-12 | 2018-03-20 | 中国科学院光电技术研究所 | Super resolution lithography device based on flexible material |
| JP7153664B2 (en) * | 2017-03-28 | 2022-10-14 | ロケット フレール | 1,4:Acrylic acid derivative of 3,6-dianhydrohexitol |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07153664A (en) * | 1993-11-30 | 1995-06-16 | Canon Inc | Mask holding device and aligner using it as well as manufacture of device |
-
2021
- 2021-11-26 CN CN202111419010.5A patent/CN114014295B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101105636A (en) * | 2002-02-22 | 2008-01-16 | Asml控股股份有限公司 | System and method for using a two part cover for protecting a reticle |
| CN102586890A (en) * | 2012-03-20 | 2012-07-18 | 北京大学 | Device for preparing black silicon |
| CN102664054A (en) * | 2012-05-10 | 2012-09-12 | 深圳大学 | X-ray absorption grate manufacturing method and filling device thereof |
| CN205879358U (en) * | 2015-05-26 | 2017-01-11 | 柯尼卡美能达株式会社 | Combination, color measurement meter and mask of total mark ball and mask |
| JP7153664B2 (en) * | 2017-03-28 | 2022-10-14 | ロケット フレール | 1,4:Acrylic acid derivative of 3,6-dianhydrohexitol |
| CN107817653A (en) * | 2017-12-12 | 2018-03-20 | 中国科学院光电技术研究所 | Super resolution lithography device based on flexible material |
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