CN114005753A - Oxidation process method of IGBT product and IGBT product after oxidation - Google Patents
Oxidation process method of IGBT product and IGBT product after oxidation Download PDFInfo
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- 238000004140 cleaning Methods 0.000 claims abstract description 13
- 239000007789 gas Substances 0.000 claims description 62
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 57
- 239000001301 oxygen Substances 0.000 claims description 57
- 229910052760 oxygen Inorganic materials 0.000 claims description 57
- 238000001816 cooling Methods 0.000 claims description 16
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 13
- 238000002360 preparation method Methods 0.000 claims description 13
- 238000006243 chemical reaction Methods 0.000 claims description 12
- 238000010438 heat treatment Methods 0.000 claims description 7
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- 238000002844 melting Methods 0.000 claims description 4
- 230000008018 melting Effects 0.000 claims description 4
- 238000003486 chemical etching Methods 0.000 claims description 2
- 238000013507 mapping Methods 0.000 claims description 2
- 239000012535 impurity Substances 0.000 abstract description 13
- 238000012805 post-processing Methods 0.000 abstract description 13
- 238000005192 partition Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 14
- 239000000758 substrate Substances 0.000 description 7
- 238000012986 modification Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
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- 229910001882 dioxygen Inorganic materials 0.000 description 1
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- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
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- 230000002452 interceptive effect Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
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Abstract
An oxidation process method of an IGBT product and the IGBT product after oxidation, the process method comprises the steps of placing the IGBT product, post-processing a furnace tube and post-processing a dummy wafer; placing the IGBT products comprises alternately arranging the IGBT products and dummy wafers; the post-treatment of the furnace tube comprises the step of treating the furnace tube by adopting DCE gas; when DCE gas is adopted for treatment, the flow rate of the DCE gas is 0.2-0.5 SLM, the treatment temperature is 1000-1100 ℃, and the holding time is 1-2 h; the post-treatment of the dummy wafer comprises the removal and cleaning of an oxide layer on the surface of the dummy wafer and the growth of a new oxide layer. According to the oxidation process method, the influence of impurities is effectively eliminated through product partition groove placement, dummy wafer post-treatment and DCE treatment of an oxidation equipment chamber in the oxidation process, the influence of the impurities on the oxidation process can be effectively controlled, the film thickness uniformity baseline of the IGBT product oxidized by the process is less than 2%, the film thickness uniformity of the oxidation process is remarkably improved, and the consistency and reliability of the product are improved.
Description
Technical Field
The invention belongs to the field of novel processes for improving the performance and the yield of semiconductor devices, and relates to an oxidation process method of an IGBT product and the IGBT product after oxidation.
Background
In order to reduce the on-resistance of the IGBT product and improve the power of the IGBT product, the substrate of the IGBT product is usually a heavily doped substrate, the substrate resistivity of part of the product reaches 0.002-0.005 omega-cm, and the substrate impurity concentration reaches 2E19Per cm3. The process of the IGBT product generally includes depositing a layer of thick epitaxial process on the substrate surface, and then performing subsequent steps of photolithography, etching, oxidation, diffusion, thin film deposition, and the like to form a specific device. After the epitaxial process of the IGBT product, in an oxidation process chamber, along with accumulation of operation products, impurities in the substrate overflow and diffuse to the oxidation process chamber and the surfaces of dummy wafers in the chamber, and during operation of the oxidation process, the impurities increase reaction lattice points of oxidation diffusion, so that oxidation rate reaction is promoted, and the uniformity of a local oxidation process is poor. Namely, the uniformity of the film thickness of the product is poor and reaches 5% due to the overflow effect of high-concentration impurities on the substrate in the subsequent oxidation process, the requirements of key levels of the product part cannot be met, and particularly, the IGBT product with high yield, parameter consistency and reliability requirements has great influence.
Disclosure of Invention
Aiming at the problems in the prior art, the invention provides an oxidation process method of an IGBT product and the IGBT product after oxidation, so that the film thickness uniformity of the IGBT product is effectively controlled, and the yield and the reliability of the product are improved.
The invention is realized by the following technical scheme:
an oxidation process method of an IGBT product comprises the steps of placing the IGBT product, post-treating a furnace tube and post-treating a dummy wafer;
the IGBT product placing comprises the step of alternately arranging IGBT products and dummy wafers;
the post-treatment of the furnace tube comprises the step of treating the furnace tube by adopting DCE gas; when DCE gas is adopted for treatment, the flow rate of the DCE gas is 0.2-0.5 SLM, the treatment temperature is 1000-1100 ℃, and the holding time is 1-2 h;
the post-treatment of the dummy wafer comprises the steps of removing and cleaning an oxide layer on the surface of the dummy wafer and growing a new oxide layer.
Preferably, the sheet placing of the IGBT product is that at least two dummy sheets are arranged between two IGBT products.
Preferably, before the DCE gas treatment furnace tube is adopted, the method further comprises the following steps:
s11: feeding the furnace tube, setting the temperature of the furnace tube after feeding the furnace tube to 700-800 ℃, introducing oxygen 12-16 SLM, and maintaining for 25 min;
s12: heating, setting the temperature to be 1000-1100 ℃, introducing 12-16 SLM oxygen, and maintaining for 1 h;
s13: and (3) performing primary gas conversion, setting the temperature to be 1000-1100 ℃, introducing 10-12 SLM (Selective laser melting) oxygen and 0.2-0.5 SLM DCE (gas chemical etching) gas, and maintaining for 10 s.
Preferably, after the furnace tube is treated by the DCE gas, the method further comprises the following steps:
s21: converting secondary gas, setting the temperature to be 700-800 ℃, introducing nitrogen into 12-16 SLM, and maintaining for 10 s;
s22: cooling, setting the temperature to be 700-800 ℃, introducing oxygen into 12-16 SLM, and maintaining for 2 h;
s23: taking out the boat, setting the temperature at 700-800 ℃, introducing oxygen into the range of 12-16 SLM, and maintaining for 25 min;
s24: and cooling, setting the temperature to be 700-800 ℃, introducing oxygen for 12-16 SLM (selected mapping), and maintaining for 40min to finish the post-treatment of the furnace tube.
Preferably, the DCE gas treatment process is performed in a furnace tube for at most 6 times in an accumulated manner.
Preferably, the DCE gas is introduced in an oxygen atmosphere, and the flow rate of the oxygen is 10-12 SLM.
Preferably, the oxidation process method further comprises the preparation of a dummy wafer, and the preparation of the dummy wafer comprises the growth of an oxide layer on the surface of the dummy wafer.
Preferably, the thickness of the oxide layer grown on the surface of the dummy wafer is
Preferably, the dummy pieces are cumulatively used up to 6 times for post-processing of the dummy pieces.
According to the oxidized IGBT product prepared by any one of the oxidation process methods, the film thickness uniformity baseline of the oxidized IGBT product is less than 2%.
Compared with the prior art, the invention has the following beneficial technical effects:
the utility model provides an oxidation technology method of IGBT product, can effectively avoid the mutual pollution of impurity between the product piece through placing the product compartment in to oxidation technology, through adopting DCE gas to carry out aftertreatment to the boiler tube and can effectively reduce the influence of impurity in the cavity to the product piece, through the aftertreatment to the dummy piece, effectively get rid of the impurity on the dummy piece, reduced the influence of impurity on the dummy piece in the oxidation process to the sample piece. By improving the existing oxidation process, the influence of the dummy wafer and the chamber impurities on the performance of the product wafer is effectively controlled, and the film thickness uniformity of the oxidation process is obviously improved.
Furthermore, the IGBT product is put the piece and is set up two at least false pieces between two IGBT products, can fully reduce the interactive influence between the IGBT product piece.
Furthermore, before the DCE gas is adopted to treat the furnace tube, a preparation environment is gradually prepared for the DCE treatment process through the processes of boat entering, temperature rising and primary gas conversion, so that the effectiveness of the process is ensured.
Furthermore, after the DCE gas is adopted to treat the furnace tube, the processes of secondary gas conversion, cooling, boat discharging and cooling are also included, so that the cleanness of the furnace tube is effectively ensured.
Furthermore, the DCE gas treatment process is carried out on the furnace tube at most 6 times of accumulated operation, so that the removal of impurities on the surface of the furnace tube is facilitated.
Furthermore, DCE gas is introduced under the oxygen atmosphere, so that the gas conversion of the equipment is smoother, and the stability of the equipment is ensured.
Furthermore, the oxidation process method also comprises the preparation of a dummy wafer, and the preparation of the dummy wafer comprises the growth of the thickness of the dummy wafer on the surface of the dummy wafer
The oxide layer can effectively protect the dummy wafer.
Furthermore, the dummy wafer is accumulated and used for at most 6 times for post-treatment, so that the removal of impurities on the surface of the dummy wafer is facilitated.
The base line of the film thickness uniformity of the oxidized IGBT product is less than 2%, and the consistency and the reliability are good.
Drawings
Fig. 1 is a schematic position diagram of an IGBT product sheet placement in embodiment 1 of the present invention;
fig. 2 is a comparison result of the uniformity of the oxide film in the field oxidation process of embodiment 1 of the present invention and the uniformity of the oxide film in the field oxidation process of the prior art;
fig. 3 is a comparison result of the uniformity of the oxide film in the gate oxidation process of embodiment 1 of the present invention and the uniformity of the oxide film in the gate oxidation process of the prior art.
Detailed Description
To make the features and effects of the present invention comprehensible to those skilled in the art, general description and definitions are made below with reference to terms and expressions mentioned in the specification and claims. Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs.
The theory or mechanism described and disclosed herein, whether correct or incorrect, should not limit the scope of the present invention in any way, i.e., the present disclosure may be practiced without limitation to any particular theory or mechanism.
All features defined herein as numerical ranges or percentage ranges, such as values, amounts, levels and concentrations, are for brevity and convenience only. Accordingly, the description of numerical ranges or percentage ranges should be considered to cover and specifically disclose all possible subranges and individual numerical values (including integers and fractions) within the range.
Unless otherwise specified herein, "comprising," including, "" containing, "" having, "or the like, means" consisting of … … "and" consisting essentially of … …, "e.g.," a comprises a "means" a comprises a and the other, "and" a comprises a only.
In this context, for the sake of brevity, not all possible combinations of features in the various embodiments or examples are described. Therefore, the respective features in the respective embodiments or examples may be arbitrarily combined as long as there is no contradiction between the combinations of the features, and all the possible combinations should be considered as the scope of the present specification.
The invention provides an oxidation process method of an IGBT product and the IGBT product after oxidation, and the invention is further explained by combining with specific embodiments. It should be understood that these examples are for illustrative purposes only and are not intended to limit the scope of the present invention. Further, it should be understood that various changes or modifications of the present invention may be made by those skilled in the art after reading the teaching of the present invention, and such equivalents may fall within the scope of the present invention as defined in the appended claims.
The following examples use instrumentation conventional in the art. The experimental procedures, in which specific conditions are not noted in the following examples, are generally carried out under conventional conditions or conditions recommended by the manufacturers. The various starting materials used in the examples which follow, unless otherwise indicated, are conventional commercial products having specifications which are conventional in the art. In the description of the present invention and the following examples, "%" represents weight percent, "parts" represents parts by weight, and proportions represent weight ratios, unless otherwise specified.
Example 1
An oxidation process method of an IGBT product comprises the steps of placing the IGBT product, post-processing a furnace tube, preparing a dummy wafer and post-processing the dummy wafer;
firstly, as shown in fig. 1, the placing of the IGBT product specifically sets two dummy pieces between two IGBT products to avoid the interaction between the IGBT product pieces.
Secondly, when the post-treatment process of the furnace tube is the furnace tube accumulative operation for 6 times, introducing C in the oxygen atmosphere2H2Cl2(DCE) gas cleaning the furnace tube, comprising the steps of:
s11: feeding the furnace tube, setting the temperature of the furnace tube at 800 ℃, and introducing oxygen 16SLM for 25 min;
s12: heating, setting the temperature at 1100 ℃, introducing oxygen 16SLM, and maintaining for 1 h;
s13: performing primary gas conversion, setting the temperature at 1100 ℃, introducing oxygen 12SLM (Selective vacuum melting), introducing DCE (gas chemical oxygen enhanced) gas 0.5SLM, and maintaining for 10 s;
s0: DCE gas treatment, setting the temperature at 1100 ℃, introducing oxygen 12SLM (Selective vacuum melting), and maintaining the DCE gas at 0.5SLM for 2 hours;
s21: switching secondary gas, setting the temperature at 800 ℃, introducing nitrogen 16SLM, and maintaining for 10 s;
s22: cooling, setting the temperature at 800 ℃, introducing oxygen 16SLM, and maintaining for 2 h;
s23: taking out the boat, setting the temperature at 800 ℃, introducing oxygen 16SLM, and maintaining for 25 min;
s24: cooling, setting the temperature at 800 ℃, introducing oxygen 16SLM, maintaining for 40min, and finishing the post-treatment of the furnace tube.
Thirdly, the preparation of the dummy wafer comprises growing an oxide layer on the surface of the dummy wafer, wherein the thickness of the oxide layer is
Can effectively protect the false sheet.
Fourthly, after the dummy wafer is used for 6 times in an accumulated way, post-treatment is carried out on the dummy wafer, and the post-treatment specifically comprises the steps of removing and cleaning an oxide layer on the surface of the dummy wafer and growing a new oxide layer.
Aiming at the problem of poor uniformity of the oxidation process in the process of the IGBT product flow sheet, the invention innovatively provides the measure of controlling the uniformity of the film thickness through the product isolation groove placement, dummy sheet preparation and post-treatment and the DCE treatment mode of the oxidation equipment chamber. In the field oxidation process, the uniformity test result of the oxide film after the technical solution of the present embodiment is shown in fig. 2, while the technical solution of the present embodiment is not adopted, that is, the field oxidation process of the prior art is performed, and the uniformity test result of the oxide film is also shown in fig. 2. It can be seen that this method can optimize the oxidation process uniformity from 5% of baseline to within 2%. The invention can effectively improve the parameter consistency and reliability of the IGBT product. Meanwhile, in the gate oxidation process, the uniformity test result of the oxide film after the technical scheme of the embodiment is adopted is shown in fig. 3, and meanwhile, the technical scheme of the embodiment is not adopted, namely, the gate oxidation process of the prior art is carried out, and the uniformity test result of the oxide film is also shown in fig. 3. It can be seen that this method can optimize the oxidation process uniformity from 5% of baseline to within 2%. The invention can effectively improve the parameter consistency and reliability of IGBT products.
Example 2
An oxidation process method of an IGBT product comprises the steps of placing the IGBT product, post-processing a furnace tube, preparing a dummy wafer and post-processing the dummy wafer;
firstly, the IGBT product is put the piece and is specifically set up three false piece between two IGBT products.
Secondly, when the post-treatment process of the furnace tube is the furnace tube accumulative operation for 5 times, introducing C in the oxygen atmosphere2H2Cl2(DCE) gas cleaning the furnace tube, comprising the steps of:
s11: feeding the furnace tube, setting the temperature of the furnace tube at 778 ℃, introducing oxygen 15.4SLM, and maintaining for 25 min;
s12: heating, setting the temperature at 1070 ℃, introducing oxygen 15.4SLM, and maintaining for 1 h;
s13: performing primary gas conversion, setting the temperature at 1080 ℃, introducing oxygen 11.8SLM and DCE gas 0.48SLM, and maintaining for 10 s;
s0: DCE gas treatment, setting the temperature at 1065 ℃, introducing oxygen 11.7SLM and DCE gas 0.45SLM, and maintaining for 1.7 h;
s21: converting the secondary gas, setting the temperature at 750 ℃, introducing 15.5SLM nitrogen, and maintaining for 10 s;
s22: cooling, setting the temperature at 770 ℃, introducing oxygen 15.5SLM, and maintaining for 2 h;
s23: taking out the boat, setting the temperature at 770 ℃, introducing oxygen into the range of 15.5SLM, and maintaining for 25 min;
s24: cooling, setting the temperature at 770 ℃, introducing oxygen 15.5SLM, maintaining for 40min, and finishing the post-treatment of the furnace tube.
Thirdly, the preparation of the dummy wafer comprises growing an oxide layer on the surface of the dummy wafer, wherein the thickness of the oxide layer is
Fourthly, after the dummy wafer is used for 5 times in an accumulated way, the dummy wafer is subjected to post-treatment, and the post-treatment specifically comprises the steps of removing and cleaning an oxide layer on the surface of the dummy wafer and growing a new oxide layer.
Example 3
An oxidation process method of an IGBT product comprises the steps of placing the IGBT product, post-processing a furnace tube, preparing a dummy wafer and post-processing the dummy wafer;
firstly, the IGBT product is put the piece and is specifically set up four false pieces between two IGBT products.
Secondly, when the post-treatment process of the furnace tube is the furnace tube accumulative operation for 4 times, introducing C in the oxygen atmosphere2H2Cl2(DCE) gas cleaning the furnace tube, comprising the steps of:
s11: feeding the furnace tube, setting the temperature of the furnace tube at 740 ℃, introducing oxygen 14.7SLM, and maintaining for 25 min;
s12: heating, setting the temperature at 1050 ℃, introducing oxygen 14.8SLM, and maintaining for 1 h;
s13: performing primary gas conversion, setting the temperature at 1050 ℃, introducing oxygen 11.7SLM and DCE gas 0.44SLM, and maintaining for 10 s;
s0: DCE gas treatment, setting the temperature to be 1045 ℃, introducing oxygen gas to be 11.5SLM, and keeping DCE gas to be 0.37SLM for 1.3 h;
s21: switching secondary gas, setting the temperature at 740 ℃, introducing 14.7SLM nitrogen, and maintaining for 10 s;
s22: cooling, setting the temperature at 760 ℃, introducing 14.6SLM of oxygen, and maintaining for 2 h;
s23: taking out, setting the temperature at 750 ℃, introducing oxygen 14.5SLM, and maintaining for 25 min;
s24: cooling, setting the temperature at 750 ℃, introducing oxygen 14.5SLM, maintaining for 40min, and finishing the post-treatment of the furnace tube.
Third, the preparation of the dummy wafer comprises growing on the surface of the dummy waferAn oxide layer having a thickness of
Fourthly, after the dummy wafer is used for 4 times in an accumulated way, carrying out post-treatment on the dummy wafer, specifically comprising the steps of removing and cleaning an oxide layer on the surface of the dummy wafer and growing a new oxide layer.
Example 4
An oxidation process method of an IGBT product comprises the steps of placing the IGBT product, post-processing a furnace tube, preparing a dummy wafer and post-processing the dummy wafer;
firstly, the IGBT product is put the piece and is specifically set up four false pieces between two IGBT products.
Secondly, when the post-treatment process of the furnace tube is the furnace tube accumulative operation for 3 times, introducing C in the oxygen atmosphere2H2Cl2(DCE) gas cleaning the furnace tube, comprising the steps of:
s11: feeding the furnace tube, setting the temperature of the furnace tube at 720 ℃ after the furnace tube is fed, introducing oxygen 12.5SLM, and maintaining for 25 min;
s12: heating, setting the temperature at 1020 ℃, introducing oxygen 12.6SLM, and maintaining for 1 h;
s13: performing primary gas conversion, setting the temperature at 1030 ℃, introducing oxygen 11.5SLM and DCE gas 0.3SLM, and maintaining for 10 s;
s0: DCE gas treatment, wherein the temperature is set to be 1030 ℃, oxygen is introduced into the system at 10.5SLM, the DCE gas is introduced into the system at 0.25SLM, and the DCE gas is maintained for 1.2 h;
s21: switching secondary gas, setting the temperature at 720 ℃, introducing nitrogen gas into the reactor for 12.8SLM for 10 s;
s22: cooling, setting the temperature at 740 ℃, introducing oxygen 12.5SLM, and maintaining for 2 h;
s23: taking out the boat, setting the temperature at 720 ℃, introducing oxygen 12.6SLM, and maintaining for 25 min;
s24: cooling, setting the temperature at 740 ℃, introducing oxygen 12.5SLM, maintaining for 40min, and finishing the post-treatment of the furnace tube.
Thirdly, the preparation of the dummy wafer comprises growing an oxide layer on the surface of the dummy wafer, wherein the thickness of the oxide layer is
Fourthly, after the dummy wafer is used for 3 times in an accumulated mode, post-treatment is carried out on the dummy wafer, and specifically, the post-treatment comprises removing and cleaning an oxide layer on the surface of the dummy wafer and growing a new oxide layer.
Example 5
An oxidation process method of an IGBT product comprises the steps of placing the IGBT product, post-processing a furnace tube, preparing a dummy wafer and post-processing the dummy wafer;
firstly, the IGBT product is put the piece and is specifically set up 5 false pieces between two IGBT products.
Secondly, when the post-treatment process of the furnace tube is the furnace tube accumulative operation for 2 times, C is introduced under the oxygen atmosphere2H2Cl2(DCE) gas cleaning the furnace tube, comprising the steps of:
s11: feeding the furnace tube, setting the temperature of the furnace tube after feeding the furnace tube at 700 ℃, introducing oxygen 12SLM, and maintaining for 25 min;
s12: heating, setting the temperature at 1000 ℃, introducing oxygen 12SLM, and maintaining for 1 h;
s13: performing primary gas conversion, setting the temperature at 1000 ℃, introducing oxygen 10SLM and DCE gas 0.2SLM, and maintaining for 10 s;
s0: DCE gas treatment, setting the temperature at 1000 ℃, introducing oxygen 10SLM, and maintaining the DCE gas at 0.2SLM for 0.2 h;
s21: switching secondary gas, setting the temperature at 700 ℃, introducing nitrogen 12SLM, and maintaining for 10 s;
s22: cooling, setting the temperature at 700 ℃, introducing oxygen 12SLM, and maintaining for 2 h;
s23: taking out, setting the temperature at 700 ℃, introducing oxygen 12SLM, and maintaining for 25 min;
s24: cooling, setting the temperature at 700 ℃, introducing oxygen 12SLM, maintaining for 40min, and finishing the post-treatment of the furnace tube.
Thirdly, the preparation of the dummy wafer comprises growing an oxide layer on the surface of the dummy wafer, wherein the thickness of the oxide layer is
Fourthly, after the dummy wafer is used for 2 times in an accumulated way, carrying out post-treatment on the dummy wafer, specifically comprising the steps of removing and cleaning an oxide layer on the surface of the dummy wafer and growing a new oxide layer.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that those skilled in the art can make various improvements and modifications without departing from the principle of the present invention, and these improvements and modifications should also be construed as the protection scope of the present invention.
Finally, it should be noted that the above embodiments are only used for illustrating the technical solutions of the present invention and not for limiting the protection scope of the present invention, and although the present invention is described in detail with reference to the preferred embodiments, it should be understood by those skilled in the art that modifications or equivalent substitutions can be made on the technical solutions of the present invention without departing from the spirit and scope of the technical solutions of the present invention.
Claims (10)
1. An oxidation process method of an IGBT product is characterized by comprising the steps of placing the IGBT product, post-treating a furnace tube and post-treating a dummy wafer;
the IGBT product placing comprises the step of alternately arranging IGBT products and dummy wafers;
the post-treatment of the furnace tube comprises the step of treating the furnace tube by adopting DCE gas; when DCE gas is adopted for treatment, the flow rate of the DCE gas is 0.2-0.5 SLM, the treatment temperature is 1000-1100 ℃, and the holding time is 1-2 h;
the post-treatment of the dummy wafer comprises the steps of removing and cleaning an oxide layer on the surface of the dummy wafer and growing a new oxide layer.
2. The oxidation process method of the IGBT product according to claim 1, wherein the placing of the IGBT product is to arrange at least two dummy wafers between two IGBT products.
3. The oxidation process method of an IGBT product according to claim 1, characterized in that before said DCE gas treatment furnace tube, it further comprises the following steps:
s11: feeding the furnace tube, setting the temperature of the furnace tube after feeding the furnace tube to 700-800 ℃, introducing oxygen 12-16 SLM, and maintaining for 25 min;
s12: heating, setting the temperature to be 1000-1100 ℃, introducing 12-16 SLM oxygen, and maintaining for 1 h;
s13: and (3) performing primary gas conversion, setting the temperature to be 1000-1100 ℃, introducing 10-12 SLM (Selective laser melting) oxygen and 0.2-0.5 SLM DCE (gas chemical etching) gas, and maintaining for 10 s.
4. The oxidation process method of an IGBT product according to claim 1, characterized in that after said furnace tube is treated with said DCE gas, it further comprises the following steps:
s21: converting secondary gas, setting the temperature to be 700-800 ℃, introducing nitrogen into 12-16 SLM, and maintaining for 10 s;
s22: cooling, setting the temperature to be 700-800 ℃, introducing oxygen into 12-16 SLM, and maintaining for 2 h;
s23: taking out the boat, setting the temperature at 700-800 ℃, introducing oxygen into the range of 12-16 SLM, and maintaining for 25 min;
s24: and cooling, setting the temperature to be 700-800 ℃, introducing oxygen for 12-16 SLM (selected mapping), and maintaining for 40min to finish the post-treatment of the furnace tube.
5. The oxidation process method of IGBT products according to claim 1, characterized in that the DCE gas treatment process is performed at most 6 times of accumulated operation of furnace tubes.
6. The oxidation process method of the IGBT product according to claim 1, wherein the DCE gas is introduced under an oxygen atmosphere, and the flow rate of the oxygen is 10-12 SLM.
7. The oxidation process method of an IGBT product according to claim 1, further comprising a dummy wafer preparation, the dummy wafer preparation comprising a growth of an oxide layer on a dummy wafer surface.
8. The oxidation process method of an IGBT product according to claim 7, characterized in that said dummyThe thickness of the oxide layer grown on the surface of the wafer is as follows
9. The oxidation process method for the IGBT product as claimed in claim 1, wherein the dummy wafer is cumulatively used up to 6 times for post-treatment of the dummy wafer.
10. The oxidized IGBT product prepared by the oxidation process method according to any one of claims 1 to 9, wherein the base line of the film thickness uniformity of the oxidized IGBT product is less than 2%.
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