CN113976864B - Device and method for reducing generation of blade mixed crystals by adopting gas film method - Google Patents
Device and method for reducing generation of blade mixed crystals by adopting gas film method Download PDFInfo
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- CN113976864B CN113976864B CN202111626154.8A CN202111626154A CN113976864B CN 113976864 B CN113976864 B CN 113976864B CN 202111626154 A CN202111626154 A CN 202111626154A CN 113976864 B CN113976864 B CN 113976864B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22D—CASTING OF METALS; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES
- B22D27/00—Treating the metal in the mould while it is molten or ductile ; Pressure or vacuum casting
- B22D27/04—Influencing the temperature of the metal, e.g. by heating or cooling the mould
- B22D27/045—Directionally solidified castings
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
- C30B35/007—Apparatus for preparing, pre-treating the source material to be used for crystal growth
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Abstract
The invention provides a device for reducing the generation of blade mixed crystals by adopting a gas film method, which comprises a water-cooling disc, a seed crystal mould shell arranged on the water-cooling disc and a seed crystal arranged in the seed crystal mould shell, wherein a cavity is reserved between the upper surface of the seed crystal and the inner wall of the top of the seed crystal mould shell, the top of the seed crystal mould shell is communicated with a spiral section, and the spiral section is communicated with the cavity; a first air flow channel is formed in the water-cooling disc, a second air flow channel is formed in the seed crystal, one end of the second air flow channel is communicated with the first air flow channel, and the other end of the second air flow channel is communicated with the cavity; the protective gas film can be formed on the surface of the seed crystal to protect the surface of the seed crystal, so that the surface is effectively prevented from generating deposits, and impurities or mixed crystals are reduced.
Description
Technical Field
The invention relates to the technical field of single crystal high-temperature alloys, in particular to a device and a method for reducing mixed crystals of a blade by adopting a gas film method.
Background
Single crystal superalloy blades are one of the core components of aircraft engines. The high-temperature gas-corrosion-resistant steel can work in the environments of high temperature, high pressure, complex stress conditions and high-temperature gas corrosion for a long time. Therefore, the aeroengine blade has strict requirements on materials, the nickel-based single crystal superalloy is a common superalloy blade material at present, and the preparation method of the nickel-based single crystal superalloy generally adopts a directional solidification mode. The bottom of the module is placed on a water cooling disc (or in liquid metal) in a casting mode of directional solidification, a longitudinal temperature gradient is formed between the bottom of the module and the upper part of the module in the heating belt, and the module is pulled out of a hot area of the heating belt in a traction mode, so that the purpose of sequentially solidifying casting grains in the module from bottom to top is achieved.
At present, the mode of preparing the single crystal blade is mainly divided into two modes, one mode is that a crystal starter and a spiral crystal selector are added at the bottom, mixed crystals are filtered out in the directional solidification process, and a single crystal tissue close to the <001> direction is selected, which is called as a crystal selection method; the other method is that a seed crystal with the <001> orientation is prefabricated and placed on a base, and then the poured molten metal is used for growing a single crystal blade by 'copying' the orientation of the seed crystal in the solidification process, namely a 'seed crystal method'. The crystal selection method has relatively simple process and is widely applied in industry, but the three-dimensional orientation of the single crystal blade cannot be accurately controlled as a result of natural competitive growth of crystal grains. The seed crystal method overcomes the defect and can effectively control the transverse orientation of the blade. However, in actual production, the surface of the seed crystal is prone to generate mixed crystals due to various factors, and therefore, a combination of the seed crystal method and the crystal selection method is generally adopted.
The prefabricated seed crystal is put into the bottom of the seed crystal mould shell and is connected with the spiral section, and the other end of the spiral section is connected with the blade and is communicated with the atmosphere in the furnace. However, in the temperature rising and holding process of the seed crystal mould shell, the high-temperature atmosphere in the furnace and trace components in the seed crystal mould shell can be deposited on the surfaces of the water-cooling disc, the bottom plate of the seed crystal mould shell and the seed crystal. A deposition layer is formed on the surface of the seed crystal, the contact between the seed crystal and molten metal is blocked by the deposition layer, the growth process that the molten metal duplicates the orientation of the seed crystal is seriously disturbed, small-angle grain boundaries and mixed crystals are easily generated, the crystal selection failure is caused or a single crystal tissue which does not meet the technical requirement is finally selected, and the blade has inclusion or mixed crystal defects.
Disclosure of Invention
The invention aims to provide a device and a method for reducing the generation of blade mixed crystals by adopting a gas film method, which can form a protective gas film on the surface of seed crystals to protect the surface of the seed crystals and effectively avoid the generation of deposits on the surface, thereby reducing the generation of impurities or mixed crystals.
The embodiment of the invention is realized by the following technical scheme:
a device for reducing the generation of blade mixed crystals by adopting a gas film method comprises a water-cooling disc, a seed crystal mould shell arranged on the water-cooling disc and a seed crystal arranged in the seed crystal mould shell, wherein a cavity is reserved between the upper surface of the seed crystal and the inner wall of the top of the seed crystal mould shell, the top of the seed crystal mould shell is communicated with a spiral section, and the spiral section is communicated with the cavity; a first air flow channel is formed in the water-cooling disc, a second air flow channel is formed in the seed crystal, one end of the second air flow channel is communicated with the first air flow channel, and the other end of the second air flow channel is communicated with the cavity.
Furthermore, the air outlet end at the top of the second airflow channel is circumferentially and uniformly communicated with a plurality of obliquely arranged drainage channels, and the drainage channels extend to the upper surface of the seed crystal and form air holes.
Further, the number of the drainage channels is 3-8.
Further, the inner diameter of the drainage channel is 0.5-1 mm.
Further, the air hole is located at the distance from the center 1/2 r-3/5 r of the seed crystal.
Further, the height of the cavity accounts for 1/6-1/2 of the height of the seed crystal mould shell.
Further, the first air flow channel and the second air flow channel are coaxially arranged.
Further, the inner diameter of the second air flow passage is smaller than the inner diameter of the first air flow passage.
Further, the spiral section is arranged in a spiral manner.
A method for reducing the generation of blade mixed crystals by adopting a gas film method comprises the device and comprises the following steps:
s1, vacuumizing a seed crystal mould shell after the seed crystal mould shell is put into a furnace, wherein when the vacuum degree reaches 10-4~10-5When mbar exists, introducing inert gas into a first gas flow channel in the water-cooling disc at a speed of 1-10L/min, introducing the inert gas into the cavity through a second gas flow channel, and continuously vacuumizing;
s2, continuously heating to 1200-1500 ℃, preserving heat for a period of time, and closing inert gas before pouring molten metal;
s3, raising the vacuum degree to 10-4~10-5After mbar, the metal bath is poured in.
The technical scheme of the embodiment of the invention at least has the following advantages and beneficial effects:
according to the invention, argon is introduced from the first air flow channel of the water-cooling disc to the air hole on the surface of the seed crystal, and in the temperature rise process of the whole module, the argon is dissipated on the top surface of the seed crystal to form a protective air film to protect the surface of the seed crystal, so that the surface is effectively prevented from generating deposits, and thus the generation of impurities or mixed crystals is reduced. And after the molten metal is poured, the molten metal is quickly and completely solidified when not approaching the water-cooling disc, and the molten metal cannot flow into the first air flow channel of the water-cooling disc to block the channel.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained according to the drawings without inventive efforts.
FIG. 1 is a schematic structural diagram of an apparatus for reducing generation of leaf mixed crystals by using a gas film method according to embodiment 1 of the present invention;
FIG. 2 is a top view of a seed crystal provided in example 1 of the present invention;
FIG. 3 is a gold phase diagram of the product of example 1 of the present invention without a deposited layer;
fig. 4 is a gold phase diagram of the deposited layer of the product of comparative example 1.
Icon: 1-spiral section, 2-cavity, 3-seed crystal mould shell, 4-seed crystal, 5-water cooling disc, 6-air hole, 7-drainage channel, 8-second air flow channel and 9-first air flow channel.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below. The examples, in which specific conditions are not specified, were conducted under conventional conditions or conditions recommended by the manufacturer. The reagents or instruments used are not indicated by the manufacturer, and are all conventional products available commercially.
Example 1
A device for reducing the generation of blade mixed crystals by adopting a gas film method comprises a water-cooling disc 5, a seed crystal mould shell 3 arranged on the water-cooling disc 5 and a seed crystal 4 arranged in the seed crystal mould shell 3, wherein a cavity 2 is reserved between the upper surface of the seed crystal 4 and the inner wall of the top of the seed crystal mould shell 3, the top of the seed crystal mould shell 3 is communicated with a spiral section 1, and the spiral section 1 is communicated with the cavity 2; a first air flow channel 9 is formed in the water-cooling disc 5, a second air flow channel 8 is formed in the seed crystal 4, one end of the second air flow channel 8 is communicated with the first air flow channel 9, and the other end of the second air flow channel 8 is communicated with the cavity 2; preferably, the gas outlet end at the top of the second gas flow channel 8 is circumferentially and uniformly communicated with a plurality of obliquely arranged flow guide channels 7, and the flow guide channels 7 extend to the upper surface of the seed crystal 4 and form gas holes 6. Specifically, the first air flow path 9, the second air flow path 8, and the air holes 6 may be prefabricated by an electrical discharge drilling process.
And introducing inert gas such as argon from the water-cooling disc 5 to the air hole 6 on the surface of the seed crystal 4, wherein the argon is dissipated on the top surface of the seed crystal 4 to form a layer of air film to protect the surface of the seed crystal 4 and avoid surface deposits in the heating process of the whole module, thereby reducing the generation of mixed crystals. After the metal liquid is poured, the metal liquid is rapidly solidified when the metal liquid is close to the water-cooling disc 5, and the metal liquid cannot flow into the first air flow channel 9 of the water-cooling disc 5 to block the channel. The arrangement of the spiral section 1 enables the orientation of the central position of the seed crystal 4 to be normally copied, the mixed crystal can be further filtered when the seed crystal enters the spiral section through the necking section, and the normal orientation copying cannot be influenced even if the mixed crystal grows out of the air hole 6 of the seed crystal 4.
In this embodiment, the number of the drainage channels 7 is 3 to 8.
In this embodiment, the inner diameter of the drainage channel 7 is 0.5 to 1 mm.
In the embodiment, the radius of the seed crystal is r, and the air hole 6 is far from the center 1/2 r-3/5 r of the seed crystal 4.
In this embodiment, the height of the cavity 2 is 1/6-1/2 of the height of the seed crystal mold shell 3, so that argon forms a sufficient protective gas film at the cavity 2, the surface of the seed crystal 4 is protected by the gas film, and the generation of a deposition layer caused by the atmosphere in the furnace is effectively prevented.
In this embodiment, the first gas flow channel 9 is arranged coaxially with the second gas flow channel 8, so that the argon gas can enter the cavity 2 more smoothly and quickly.
In this embodiment, the inner diameter of the second airflow channel 8 is smaller than the inner diameter of the first airflow channel 9, so that the processing is more convenient, and on the other hand, the inner diameter of the second airflow channel 8 is small, so that the flow rate and the pressure of the argon entering the second airflow channel 8 are increased, and the argon entering the cavity 2 can quickly and stably escape on the surface of the seed crystal 4 to form a protective gas film, thereby preventing the generation of a deposition layer.
A method for reducing the generation of blade mixed crystals by using the device and adopting a gas film method comprises the following steps:
s1, vacuumizing a seed crystal mould shell after the seed crystal mould shell is put into a furnace, wherein when the vacuum degree reaches 10-5When mbar occurs, introducing inert gas into a first gas flow channel in the water-cooling disc at the speed of 6L/min, introducing the inert gas into the cavity through a second gas flow channel, and continuously vacuumizing to keep the gas pressure stable;
s2, continuously heating to 1500 ℃, preserving heat for a period of time, and closing the inert gas before pouring the metal liquid;
s3, raising the vacuum degree to 10-5After mbar, the metal bath is poured in, the casting is completed and the blade is obtained.
Argon is dissipated on the surface of the seed crystal to form a protective gas film, so that the generation of a deposition layer caused by the atmosphere in the furnace is effectively prevented. After the molten metal is poured into the module, the surface of the seed crystal is melted, the molten metal flows downwards along with the air holes, but the molten metal is completely solidified when not approaching the water-cooling disc, and the first air flow channel at the water-cooling disc cannot be blocked. The microscopic non-deposition layer schematic diagram of the gold phase diagram of the non-deposition oxide of the product prepared in the embodiment is shown in fig. 3, and as can be seen from fig. 3, the blade prepared by the invention well controls the generation of mixed crystals.
Example 2
The present embodiment is different from embodiment 1 in that: the method comprises the following steps:
s1, vacuumizing a seed crystal mould shell after the seed crystal mould shell is put into a furnace, wherein when the vacuum degree reaches 10-4When mbar exists, inert gas is introduced into a first gas flow channel in the water-cooling disc at a speed of 10L/min, the inert gas is introduced into the cavity through a second gas flow channel, and meanwhile, the air pressure is kept stable through continuous vacuum pumping;
s2, continuing to heat to 1200 ℃, preserving the heat for a period of time, and closing the inert gas before pouring the metal liquid;
s3, raising the vacuum degree to 10-4After mbar, the metal bath is poured in, the casting is completed and the blade is obtained.
Comparative example 1
This comparative example differs from example 1 in that: a first air flow channel is not arranged in the water-cooling disc, and a second air flow channel is not arranged in the seed crystal. FIG. 4 is a diagram of a gold phase in which deposition occurs without using the present invention and mixed crystals occur, and it can be seen from FIG. 4 that in this comparative example, since there is no gas film to protect the surface of the seed crystal, a deposition layer is formed on the surface of the seed crystal, and mixed crystals occur on the surface of the product, and are very obvious.
In conclusion, the method of the embodiment of the invention well controls the generation of the mixed crystal. The technical scheme of the invention successfully inhibits the surface of the seed crystal from generating a deposition layer so as to reduce the mixed crystal condition caused by the deposition layer, and the technical advantages are very obvious and the market popularization prospect is very wide.
The above is only a preferred embodiment of the present invention, and is not intended to limit the present invention, and various modifications and changes will occur to those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (9)
1. A device for reducing the generation of blade mixed crystals by adopting a gas film method is characterized in that: the seed crystal mold comprises a water-cooling disc, a seed crystal mold shell arranged on the water-cooling disc and a seed crystal arranged in the seed crystal mold shell, wherein a cavity is reserved between the upper surface of the seed crystal and the inner wall of the top of the seed crystal mold shell, the top of the seed crystal mold shell is communicated with a spiral section, and the spiral section is communicated with the cavity;
a first air flow channel is formed in the water-cooling disc, a second air flow channel is formed in the seed crystal, one end of the second air flow channel is communicated with the first air flow channel, and the other end of the second air flow channel is communicated with the cavity;
the operation method comprises the following steps:
s1, vacuumizing a seed crystal mould shell after the seed crystal mould shell is put into a furnace, wherein when the vacuum degree reaches 10-4~10-5When mbar occurs, inert gas is introduced into the first air flow in the water-cooling disc, and the inert gas is introduced into the cavity through the second air flow channel and is continuously vacuumized;
s2, continuously heating to 1200-1500 ℃, preserving heat for a period of time, and closing inert gas before pouring molten metal;
s3, raising the vacuum degree to 10-4~10-5After mbar, the metal bath is poured in, the casting is completed and the blade is obtained.
2. The device for reducing the generation of the mixed crystals on the blades by the gas film method as claimed in claim 1, wherein a plurality of obliquely arranged flow guide channels are uniformly communicated with the gas outlet end at the top of the second gas flow channel in the circumferential direction, and the flow guide channels extend to the upper surface of the seed crystal and form air holes.
3. The device for reducing the generation of the impurity crystal of the blade by the air film method as claimed in claim 2, wherein 3-8 drainage channels are provided.
4. The device for reducing the generation of the impurity crystal of the blade by the gas film method as claimed in claim 3, wherein the inner diameter of the flow guide channel is 0.5-1 mm.
5. The device for reducing the generation of the mixed crystals on the blade by the gas film method as claimed in claim 2, wherein the gas hole is 1/2 r-3/5 r away from the center of the seed crystal.
6. The device for reducing the generation of the mixed crystals of the blade by the gas film method as claimed in claim 1, wherein the height of the cavity accounts for 1/6-1/2 of the height of the seed crystal mold shell.
7. The device for reducing the generation of the impurity crystal of the blade by the gas film method as claimed in claim 1, wherein the first gas flow channel and the second gas flow channel are coaxially arranged.
8. The apparatus for reducing the generation of miscellaneous crystals of the blade by the vapor deposition method as set forth in claim 1, wherein an inner diameter of the second gas flow path is smaller than an inner diameter of the first gas flow path.
9. The device for reducing the generation of the impurity crystal of the blade by the gas film method as claimed in claim 1, wherein the inert gas is introduced into S1 at a speed of 1-10L/min.
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