CN113964255A - LED lamp bead packaging method based on quantum dot fluorescent film - Google Patents
LED lamp bead packaging method based on quantum dot fluorescent film Download PDFInfo
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- CN113964255A CN113964255A CN202111060057.7A CN202111060057A CN113964255A CN 113964255 A CN113964255 A CN 113964255A CN 202111060057 A CN202111060057 A CN 202111060057A CN 113964255 A CN113964255 A CN 113964255A
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- quantum dot
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- 238000004806 packaging method and process Methods 0.000 title claims abstract description 99
- 239000002096 quantum dot Substances 0.000 title claims abstract description 45
- 239000011324 bead Substances 0.000 title claims abstract description 29
- 238000000034 method Methods 0.000 title claims abstract description 21
- 239000003292 glue Substances 0.000 claims abstract description 93
- 230000017525 heat dissipation Effects 0.000 claims abstract description 27
- 239000011248 coating agent Substances 0.000 claims abstract description 18
- 238000000576 coating method Methods 0.000 claims abstract description 18
- 229910052751 metal Inorganic materials 0.000 claims abstract description 12
- 239000002184 metal Substances 0.000 claims abstract description 12
- 239000007788 liquid Substances 0.000 claims abstract description 4
- 239000000463 material Substances 0.000 claims description 47
- 238000001035 drying Methods 0.000 claims description 32
- 239000000843 powder Substances 0.000 claims description 14
- 238000011049 filling Methods 0.000 claims description 10
- 239000000203 mixture Substances 0.000 claims description 10
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 claims description 6
- 239000002243 precursor Substances 0.000 claims description 6
- 238000005303 weighing Methods 0.000 claims description 6
- 238000002156 mixing Methods 0.000 claims description 5
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 5
- YBNMDCCMCLUHBL-UHFFFAOYSA-N (2,5-dioxopyrrolidin-1-yl) 4-pyren-1-ylbutanoate Chemical compound C=1C=C(C2=C34)C=CC3=CC=CC4=CC=C2C=1CCCC(=O)ON1C(=O)CCC1=O YBNMDCCMCLUHBL-UHFFFAOYSA-N 0.000 claims description 3
- 229910003373 AgInS2 Inorganic materials 0.000 claims description 3
- 229910004613 CdTe Inorganic materials 0.000 claims description 3
- 229910002601 GaN Inorganic materials 0.000 claims description 3
- 229910005543 GaSe Inorganic materials 0.000 claims description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 3
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 3
- -1 InN Chemical compound 0.000 claims description 3
- 229910000673 Indium arsenide Inorganic materials 0.000 claims description 3
- 229910017680 MgTe Inorganic materials 0.000 claims description 3
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 claims description 3
- 229910019142 PO4 Inorganic materials 0.000 claims description 3
- 229910002665 PbTe Inorganic materials 0.000 claims description 3
- 229910020698 PbZrO3 Inorganic materials 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910007709 ZnTe Inorganic materials 0.000 claims description 3
- 150000004645 aluminates Chemical class 0.000 claims description 3
- 229910002113 barium titanate Inorganic materials 0.000 claims description 3
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 claims description 3
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 claims description 3
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 3
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 claims description 3
- 150000004767 nitrides Chemical class 0.000 claims description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 claims description 3
- 239000010452 phosphate Substances 0.000 claims description 3
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 239000011780 sodium chloride Substances 0.000 claims description 3
- 238000004528 spin coating Methods 0.000 claims description 3
- 238000003756 stirring Methods 0.000 claims description 3
- OCGWQDWYSQAFTO-UHFFFAOYSA-N tellanylidenelead Chemical compound [Pb]=[Te] OCGWQDWYSQAFTO-UHFFFAOYSA-N 0.000 claims description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims description 2
- 230000000694 effects Effects 0.000 abstract description 14
- 238000005538 encapsulation Methods 0.000 description 12
- 238000010438 heat treatment Methods 0.000 description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- XPIIDKFHGDPTIY-UHFFFAOYSA-N F.F.F.P Chemical compound F.F.F.P XPIIDKFHGDPTIY-UHFFFAOYSA-N 0.000 description 1
- 108010043121 Green Fluorescent Proteins Proteins 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H01L33/504—Elements with two or more wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/642—Heat extraction or cooling elements characterized by the shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/644—Heat extraction or cooling elements in intimate contact or integrated with parts of the device other than the semiconductor body
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The invention discloses a packaging method of an LED lamp bead based on a quantum dot fluorescent film, which relates to the field of LED lamp bead packaging, and comprises the following steps: the method comprises the following steps: turning over the bracket, placing the fin heat dissipation plate in a groove at the bottom of the bracket to enable the fin heat dissipation plate to be tightly attached to the metal coating, and dripping first packaging glue into a gap between the fin heat dissipation plate and the bracket, wherein the liquid level of the first packaging glue is not more than one fourth of the fins of the fin heat dissipation plate; step two: and (4) putting the bracket obtained in the step one into an oven, baking the first packaging glue, and turning over the bracket. According to the invention, the groove is formed in the bottom of the bracket, the fin heat dissipation plate tightly attached to the metal coating is fixed in the groove by using the first packaging glue, heat generated by the chip can be transferred to the fin heat dissipation plate through the metal coating, and finally the heat is dissipated through the fins of the fin heat dissipation plate, so that the heat dissipation effect is better.
Description
Technical Field
The invention relates to the field of LED lamp bead packaging, in particular to a packaging method of an LED lamp bead based on a quantum dot fluorescent film.
Background
Since the twenty-first century, the backlight technology has developed rapidly, new technologies and new products are continuously provided, and LED backlights have become the mainstream of the market, compared with the traditional CCFL backlights, the LED backlights have many advantages of high color gamut, high brightness, long service life, energy saving, environmental protection, real-time color controllability, and the like, especially the high color gamut LED backlights enable the screens of electronic products such as televisions, mobile phones, tablet computers, and the like, which use the LEDs to have more vivid colors and higher color reduction degree, the current commonly used LED backlights adopt a form that a blue light chip excites YAG yellow fluorescent powder, and because of lack of red light components in the backlight, the color gamut value can only reach NTSC 65% -72%, in order to further improve the color gamut value, technicians generally adopt a mode that the blue light chip simultaneously excites the red fluorescent powder and the green fluorescent powder, but because the half-wave width of the existing fluorescent powder is wider, even if the mode is adopted, the color gamut value of the backlight source can only be increased to about NTSC 80%, and meanwhile, the excitation efficiency of the existing fluorescent powder is low, so that a large amount of fluorescent powder is needed for realizing high-color-gamut white light, and the concentration of the fluorescent powder (the proportion of the fluorescent powder in packaging glue) in the LED packaging process is very high, thereby greatly increasing the difficulty of packaging operation and the reject ratio of products.
When the existing LED lamp bead is packaged, the packaging glue for filling and fixing the chip is generally added to a certain amount at one time, and then drying is carried out.
However, after the filling is completed once, air bubbles may exist in the glue, which affects the packaging quality, and the chip and the metal layer are wrapped by the glue and the bracket, so that the heat dissipation is poor.
Disclosure of Invention
Based on the above, the invention aims to provide a packaging method of an LED lamp bead based on a quantum dot fluorescent film, so as to solve the technical problems that bubbles may exist in glue during packaging and a chip is poor in heat dissipation after packaging is completed in the conventional packaging method of the LED lamp bead.
In order to achieve the purpose, the invention provides the following technical scheme: a packaging method of an LED lamp bead based on a quantum dot fluorescent film comprises the following steps:
the method comprises the following steps: turning over the bracket, placing the fin heat dissipation plate in a groove at the bottom of the bracket to enable the fin heat dissipation plate to be tightly attached to the metal coating, and dripping first packaging glue into a gap between the fin heat dissipation plate and the bracket, wherein the liquid level of the first packaging glue is not more than one fourth of the fins of the fin heat dissipation plate;
step two: putting the bracket obtained in the step one into an oven, baking the first packaging glue, and turning over the bracket;
step three: pouring a certain amount of second packaging glue into the support with the chip and the bonding wire fixed well, drying the second packaging glue until the second packaging glue does not exceed the chip and fixing the glue;
step four: pouring second packaging glue into the support obtained in the third step again, vibrating the support to discharge bubbles in the second packaging glue, then placing the support into an oven to be baked and cured after the top surface of the second packaging glue is self-leveled, wherein the total amount of the second packaging glue is not more than 60-80% of the volume of the support;
step five: weighing a first luminescent material and a second luminescent material with equal components, and mixing, wherein the first luminescent material is quantum dot fluorescent powder;
step six: weighing a quantum dot film material and a mixture of the first luminescent material and the second luminescent material, wherein the ratio of the quantum dot film material to the mixture of the first luminescent material and the second luminescent material is 1:50-350, and uniformly stirring;
step seven: coating the glue mixture obtained in the fourth step on a jig, preparing a quantum dot fluorescent film precursor with the thickness of 10-250 mu m in a spin coating mode, and baking to solidify the precursor;
step eight: cutting the quantum dot fluorescent film according to the size of the opening at the top of the support, and then attaching the cut quantum dot fluorescent film on the second packaging glue of the lamp bead obtained in the fourth step;
step nine: coating third packaging glue on the upper surface of the quantum dot fluorescent film obtained in the step eight, standing the bracket, and filling gaps between the quantum dot fluorescent film and the bracket with the third packaging glue after the third packaging glue flows;
step ten: and (4) putting the support obtained in the ninth step into an oven for drying treatment until the third packaging glue coated on the quantum dot fluorescent film is cured, and obtaining the quantum dot fluorescent film type LED lamp bead.
Through adopting above-mentioned technical scheme, through using the fixed fin heating panel of hugging closely with the metallic coating of first encapsulation glue in the recess of support bottom, the heat accessible metallic coating that the chip produced transmits on the fin heating panel, the heat is finally dispelled through the fin of fin heating panel, the radiating effect is better, when filling second encapsulation glue, partly second encapsulation glue that does not pass the chip of earlier filling, after drying it, filling remaining encapsulation glue again, shake and carry out the bubble processing of exhausting to second encapsulation glue, make second encapsulation glue more penetrating.
The invention is further set that the second packaging glue and the third packaging glue are organic silicon packaging glue.
By adopting the technical scheme, the organic silicon type packaging adhesive has better bonding effect and does not need primer.
The invention is further set that the wavelength of the chip is 230-480 nm.
By adopting the technical scheme, the wavelength of the chip is 230nm-480nm, and the chip can be matched with the luminescent material to emit white light.
The invention further provides that the composition of the first luminescent material is: at least one of BaS, AgInS2, NaCl, Fe2O3, In2O3, InAs, InN, InP, CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, GaAs, GaN, GaS, GaSe, InGaAs, MgS, MgSe, MgTe, PbS, PbSe, PbTe, Cd (SxSe1-x), BaTiO3, PbZrO3, CsPbCl3, CsPbBr3, CsPbI3, SiC, Si, AI2O 3.
By adopting the technical scheme, the first luminescent material is prepared by mixing one or more materials, so that the luminescent effect is better.
The invention is further configured that the second luminescent material is a rare earth element doped phosphor, and the phosphor is at least one of silicate, aluminate, phosphate, nitride, and fluoride phosphor.
By adopting the technical scheme, the second luminescent material is prepared by mixing the materials with the rare earth elements, so that the luminescent effect is better.
The invention is further set that the drying temperature in the third step is 50-180 ℃, and the drying time is 0.2-4 h.
By adopting the technical scheme, the drying temperature is 50-180 ℃, the drying time is 0.2-4 h, and the drying speed is higher.
The invention is further set that the baking temperature in the fourth step is 50-180 ℃, and the drying time is 0.4-8 h.
By adopting the technical scheme, the second packaging glue is dried at the baking temperature of 50-180 ℃ for 0.4-8 h, so that the drying effect is better.
The invention is further set that the drying temperature of the step ten is 30-60 ℃, and the drying time is 2-14 h.
By adopting the technical scheme, the third packaging glue is dried at the drying temperature of 30-60 ℃ for 2-14 h, so that the drying effect is better.
In summary, the invention mainly has the following beneficial effects:
1. according to the invention, the groove is formed at the bottom of the bracket, the fin heat dissipation plate tightly attached to the metal coating is fixed in the groove by using the first packaging glue, heat generated by the chip can be transferred to the fin heat dissipation plate through the metal coating, and finally the heat is dissipated through the fins of the fin heat dissipation plate, so that the heat dissipation effect is better;
2. when the second packaging glue is filled, a part of the second packaging glue which does not exceed the chip is filled firstly, the rest packaging glue is filled after the second packaging glue is dried, and the second packaging glue is vibrated to carry out air bubble exhausting treatment on the second packaging glue, so that the second packaging glue is more permeable.
Drawings
FIG. 1 is a schematic view of an LED lamp bead of the invention after fixing a fin heat dissipation plate;
FIG. 2 is a schematic diagram of an LED lamp bead of the invention after a chip is fixed;
FIG. 3 is a schematic diagram of an LED lamp bead attached with a quantum dot fluorescent film after the second packaging glue is dried;
fig. 4 is a schematic diagram of an encapsulated LED lamp bead according to the present invention.
In the figure: 1. a support; 2. a metal plating layer; 3. a fin plate; 4. first packaging glue; 5. a chip; 6. a bonding wire; 7. second packaging glue; 8. a quantum dot film material; 9. a first light-emitting material; 10. a second luminescent material; 11. and thirdly, packaging glue.
Detailed Description
The technical solution in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. The embodiments described below with reference to the accompanying drawings are illustrative only for the purpose of explaining the present invention, and are not to be construed as limiting the present invention.
The following describes an embodiment of the present invention based on its overall structure.
A packaging method of LED lamp beads based on quantum dot fluorescent films is disclosed, as shown in figures 1-4, and comprises the following steps:
the method comprises the following steps: turning the bracket 1, placing the fin heat dissipation plate 3 in a groove at the bottom of the bracket 1, enabling the fin heat dissipation plate 3 to be tightly attached to the metal coating 2, and dripping first packaging glue 4 into a gap between the fin heat dissipation plate 3 and the bracket 1, wherein the liquid level of the first packaging glue 4 is not more than one fourth of the fins of the fin heat dissipation plate 3;
step two: putting the bracket 1 obtained in the step one into an oven, baking the first packaging glue 4, and turning over the bracket 1;
step three: pouring a certain amount of second packaging glue 7 into the support 1 with the chip 5 and the bonding wire 6 fixed well, wherein the amount of the second packaging glue 7 does not exceed the chip 5, and drying the second packaging glue 7 to fix the glue;
step four: pouring the second packaging glue 7 into the support 1 obtained in the third step, vibrating the support 1 to discharge bubbles in the second packaging glue 7, and then putting the support into an oven to bake and solidify after the top surface of the second packaging glue 7 is self-leveled, wherein the total amount of the second packaging glue is not more than 60-80% of the volume of the support 1;
step five: weighing and mixing a first luminescent material 9 and a second luminescent material 10 with equal components, wherein the first luminescent material 9 is quantum dot fluorescent powder;
step six: weighing a quantum dot film material 8 which is mixed with the first luminescent material 9 and the second luminescent material 10 in a ratio of 1:50-350, and uniformly stirring the mixture of the first luminescent material 9 and the second luminescent material 10;
step seven: coating the glue mixture obtained in the fourth step on a jig, preparing a quantum dot fluorescent film precursor with the thickness of 10-250 mu m in a spin coating mode, and baking to solidify the precursor;
step eight: cutting the quantum dot fluorescent film according to the size of the opening at the top of the support 1, and then attaching the cut quantum dot fluorescent film on the second packaging glue 7 of the lamp bead obtained in the fourth step;
step nine: coating third packaging glue 11 on the upper surface of the quantum dot fluorescent film obtained in the step eight, standing the bracket, and filling gaps between the quantum dot fluorescent film and the bracket 1 with the third packaging glue 11 after flowing;
step ten: and (4) putting the support 1 obtained in the step nine into an oven for drying treatment until the third packaging glue 11 coated on the quantum dot fluorescent film is cured, and obtaining the quantum dot fluorescent film type LED lamp bead.
Through using the fixed fin heating panel 3 that hugs closely with metal coating 2 of first encapsulation glue 4 in the recess of support 1 bottom, the heat accessible metal coating 2 that chip 5 produced transmits on fin heating panel 3, the heat is finally dispelled through the fin of fin heating panel 3, the radiating effect is better, when filling second encapsulation glue 7, fill partly second encapsulation glue 7 that does not sink chip 5 earlier, dry it the back, remaining encapsulation glue 7 of filling again, shake and carry out the gassing to second encapsulation glue 7 and handle, make second encapsulation glue 7 more penetrating.
Referring to fig. 2-4, the second packaging adhesive 7 and the third packaging adhesive 11 are silicone packaging adhesives, which have better bonding effect and do not need primer.
Referring to FIGS. 2-4, the wavelength of the chip 5 is 230-480nm, and the chip can emit white light in cooperation with the luminescent material.
Referring to fig. 3 and 4, the composition of the first luminescent material 9 is: at least one of the materials of BaS, AgInS2, NaCl, Fe2O3, In2O3, InAs, InN, InP, CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, GaAs, GaN, GaS, GaSe, InGaAs, MgS, MgSe, MgTe, PbS, PbSe, PbTe, Cd (SxSe1-x), BaTiO3, PbZrO3, CsPbCl3, CsPbBr3, CsPbI3, SiC, Si, and AI2O3, and the single material or a plurality of materials are mixed to prepare the first luminescent material 9, so that the luminescent effect is better.
Referring to fig. 3 and 4, the second luminescent material 10 is a rare earth doped phosphor, and the phosphor is at least one of silicate, aluminate, phosphate, nitride, and fluoride phosphors, and the second luminescent material 10 made of the above materials mixed with rare earth elements has a better luminescent effect.
Referring to fig. 2, in the third step, the drying temperature is 50 ℃ to 180 ℃, the drying time is 0.2h to 4h, and the second packaging glue 7 is dried at a faster drying speed.
Referring to fig. 3, the baking temperature in the fourth step is 50 ℃ to 180 ℃, the drying time is 0.4h to 8h, and the second packaging glue 7 is dried, so that the drying effect is better.
Referring to fig. 4, in the step ten, the drying temperature is 30-60 ℃, the drying time is 2-14 hours, and the third packaging glue 11 is dried, so that the drying effect is better.
Although embodiments of the present invention have been shown and described, it is intended that the present invention should not be limited thereto, that the particular features, structures, materials or characteristics described may be combined in any suitable manner in any one or more embodiments or examples, and that modifications, substitutions, variations or the like, which are not inventive and may be made by those skilled in the art without departing from the principle and spirit of the present invention and without departing from the scope of the claims.
Claims (8)
1. A packaging method of LED lamp beads based on a quantum dot fluorescent film is characterized in that: the packaging method comprises the following steps:
the method comprises the following steps: turning the bracket (1), placing the fin heat dissipation plate (3) in a groove at the bottom of the bracket (1) to enable the fin heat dissipation plate (3) to be tightly attached to the metal coating (2), and dripping first packaging glue (4) into a gap between the fin heat dissipation plate (3) and the bracket (1), wherein the liquid level of the first packaging glue (4) is not more than one fourth of the fins of the fin heat dissipation plate (3);
step two: putting the bracket (1) obtained in the step one into an oven, baking the first packaging glue (4), and turning over the bracket (1);
step three: pouring a certain amount of second packaging glue (7) into the support (1) for fixing the chip (5) and the bonding wire (6), wherein the amount of the second packaging glue (7) does not exceed the chip (5), and drying the second packaging glue to fix the glue;
step four: pouring second packaging glue (7) into the support (1) obtained in the third step, vibrating the support (1) to discharge air bubbles in the second packaging glue (7), and then putting the support into an oven to bake and solidify after the top surface of the second packaging glue (7) is self-leveled, wherein the total amount of the second packaging glue is not more than 60% -80% of the volume of the support (1);
step five: weighing and mixing a first luminescent material (9) and a second luminescent material (10) with equal components, wherein the first luminescent material (9) is quantum dot fluorescent powder;
step six: weighing a quantum dot film material (8) which is mixed with the first luminescent material (9) and the second luminescent material (10) in a ratio of 1:50-350, and uniformly stirring the mixture of the first luminescent material (9) and the second luminescent material (10);
step seven: coating the glue mixture obtained in the fourth step on a jig, preparing a quantum dot fluorescent film precursor with the thickness of 10-250 mu m in a spin coating mode, and baking to solidify the precursor;
step eight: cutting the quantum dot fluorescent film according to the size of the opening at the top of the support (1), and then attaching the cut quantum dot fluorescent film on the second packaging glue (7) of the lamp bead obtained in the fourth step;
step nine: coating third packaging glue (11) on the upper surface of the quantum dot fluorescent film obtained in the step eight, standing the bracket, and filling gaps between the quantum dot fluorescent film and the bracket (1) with the third packaging glue (11) in a flowing manner;
step ten: and (4) putting the support (1) obtained in the ninth step into an oven for drying treatment until the third packaging glue (11) coated on the quantum dot fluorescent film is cured, and obtaining the quantum dot fluorescent film type LED lamp bead.
2. The packaging method of the LED lamp bead based on the quantum dot fluorescent film as claimed in claim 1, wherein: the second packaging glue (7) and the third packaging glue (11) are organic silicon packaging glue.
3. The packaging method of the LED lamp bead based on the quantum dot fluorescent film as claimed in claim 1, wherein: the wavelength of the chip (5) is 230-480 nm.
4. The packaging method of the LED lamp bead based on the quantum dot fluorescent film as claimed in claim 1, wherein: the composition of the first luminescent material (9) is: at least one of BaS, AgInS2, NaCl, Fe2O3, In2O3, InAs, InN, InP, CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, GaAs, GaN, GaS, GaSe, InGaAs, MgS, MgSe, MgTe, PbS, PbSe, PbTe, Cd (SxSe1-x), BaTiO3, PbZrO3, CsPbCl3, CsPbBr3, CsPbI3, SiC, Si, AI2O 3.
5. The packaging method of the LED lamp bead based on the quantum dot fluorescent film as claimed in claim 1, wherein: the second luminescent material (10) is rare earth element doped fluorescent powder, and the fluorescent powder is at least one of silicate, aluminate, phosphate, nitride and fluoride fluorescent powder.
6. The packaging method of the LED lamp bead based on the quantum dot fluorescent film as claimed in claim 1, wherein: the drying temperature in the third step is 50-180 ℃, and the drying time is 0.2-4 h.
7. The packaging method of the LED lamp bead based on the quantum dot fluorescent film as claimed in claim 1, wherein: the baking temperature in the fourth step is 50-180 ℃, and the drying time is 0.4-8 h.
8. The packaging method of the LED lamp bead based on the quantum dot fluorescent film as claimed in claim 1, wherein: the drying temperature of the step ten is 30-60 ℃, and the drying time is 2-14 h.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111060057.7A CN113964255A (en) | 2021-09-10 | 2021-09-10 | LED lamp bead packaging method based on quantum dot fluorescent film |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111060057.7A CN113964255A (en) | 2021-09-10 | 2021-09-10 | LED lamp bead packaging method based on quantum dot fluorescent film |
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| Publication Number | Publication Date |
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| CN113964255A true CN113964255A (en) | 2022-01-21 |
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|---|---|---|---|
| CN202111060057.7A Withdrawn CN113964255A (en) | 2021-09-10 | 2021-09-10 | LED lamp bead packaging method based on quantum dot fluorescent film |
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| Country | Link |
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