CN113960446B - SiC chip power cycle experimental apparatus of controllable temperature - Google Patents
SiC chip power cycle experimental apparatus of controllable temperature Download PDFInfo
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- CN113960446B CN113960446B CN202111178666.2A CN202111178666A CN113960446B CN 113960446 B CN113960446 B CN 113960446B CN 202111178666 A CN202111178666 A CN 202111178666A CN 113960446 B CN113960446 B CN 113960446B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2851—Testing of integrated circuits [IC]
- G01R31/2855—Environmental, reliability or burn-in testing
- G01R31/2872—Environmental, reliability or burn-in testing related to electrical or environmental aspects, e.g. temperature, humidity, vibration, nuclear radiation
- G01R31/2874—Environmental, reliability or burn-in testing related to electrical or environmental aspects, e.g. temperature, humidity, vibration, nuclear radiation related to temperature
- G01R31/2875—Environmental, reliability or burn-in testing related to electrical or environmental aspects, e.g. temperature, humidity, vibration, nuclear radiation related to temperature related to heating
Abstract
The invention discloses a temperature-controllable SiC chip power cycle experiment device, which comprises: the device comprises a box body, a bearing table, an environment heater, a cooling water tank, silicone grease, a SiC chip, an Al2O3 insulating layer, a chip heater and a thermocouple. The device provides the inside ambient temperature of box through the ambient heater, simulates the heat that the SiC chip produced by self during operation through the chip heater, later accelerates the cooling of SiC chip through cooling water tank, accomplishes a power cycle. The environment heater and the chip heater are provided with stable power supply through the stabilized voltage power supply, and the circulation times and the circulation time of the device are controlled through the control computer, so that the aim of accelerating experiments is fulfilled.
Description
Technical Field
The invention relates to the technical field of electronic component packaging and testing, in particular to a temperature-controllable SiC chip power cycle experimental device.
Background
With the rapid development of SiC power chips, the requirements for performance and reliability of SiC chips in some emerging fields are becoming more stringent. In general, the performance and reliability of a SiC power chip are related to the operating environment temperature and its own heat generation, for example, the switching and conduction of the chip during operation, the change of the external environment, etc. all cause the temperature change of the chip itself and the environment in which it is located. The temperature change caused by these factors ranges from 0 to 100 ℃, and the influence time can be several microseconds or several months. Therefore, from research and development to mass production, each stage needs to perform power cycle experiments on the chip, and the chip is continuously and high-frequency heated-kept-cooled to accelerate the ageing, fatigue and other processes of the internal components, so that the typical failure mode is finally obtained, and the performance and reliability of the chip are known. The existing power circulation device has problems such as too slow heating of the chip, uneven heating and the like, and the problems have certain influence on accurately predicting the service life and failure mode of the chip, so that the problem can be improved.
Disclosure of Invention
The invention provides a temperature-controllable SiC chip power cycle experimental device, which aims to accurately predict the service life and failure modes of a SiC chip, shorten the experimental time and accelerate the experimental process. The device provides the inside ambient temperature of box through the ambient heater, simulates the heat that the SiC chip produced by self during operation through the chip heater, later accelerates the cooling of SiC chip through cooling water tank, accomplishes a power cycle. The environment heater and the chip heater are provided with stable power supply through the stabilized voltage power supply, and the circulation times and the circulation time of the device are controlled through the control computer, so that the aim of accelerating experiments is fulfilled.
The technical scheme of the invention is as follows:
a temperature controllable chip power cycle apparatus, comprising: box body, bearing table, environment heater, cooling water tank, silicone grease, siC chip and Al 2 O 3 Insulating layers, chip heaters, and thermocouples.
The box body is divided into an inner layer and an outer layer, wherein the outer layer is responsible for bearing load, and the inner layer is responsible for heat preservation; the bearing tables are symmetrically fixed at the middle position of the inner layer of the box body and used for bearing the cooling water tank. The environment heater is fixed on the side wall of the inner layer of the box body and used for providing stable temperature for the internal environment of the box body and simulating the environment temperature of the SiC chip under the actual working condition.
The cooling water tank crossbearer is placed on two plummer, and three holes in the middle of one side are the water inlet, and three holes in the lower of opposite side are as the delivery port for carrying out quick cooling for the SiC chip. The silicone grease is coated on the middle part of the upper surface of the cooling water tank, and a SiC chip is placed on the silicone grease. Al (Al) 2 O 3 The insulating layer is positioned between the SiC chip and the chip heater; the chip heater is located at Al 2 O 3 Over the insulating layer; the thermocouple is suspended at the position of two millimeters above the chip heater and is used for monitoring the temperature of the SiC chip in real time. The thermocouple is suspended above the chip heater and is connected by a thermocouple bracket.
Further, the middle part of the box door of the box body is made of visual high-temperature-resistant glass and is used for observing the experimental conditions in the box body.
Further, the silicone grease is used for transferring heat on the SiC chip to the cooling water tank in an accelerating way, so that the cooling effect of the cooling water tank is enhanced.
Further, al 2 O 3 The insulating layer is positioned between the SiC chip and the chip heater and is adhered to the SiC chip and the chip heater through the adhesive so as to transfer heat more uniformly, so that the chip heater can heat the SiC chip more uniformly, and the actual working condition can be better simulated.
Further, the chip heater is bonded to Al by a cement 2 O 3 And the upper surface of the insulating layer is used for heating the SiC chip to a specified temperature.
Further, the chip heater (8) is controlled by a control computer to heat, and the control computer is connected with a stabilized voltage supply.
A temperature-controllable SiC chip power cycle experiment method comprises the following steps: the surface of the SiC chip is heated and warmed more uniformly through the spiral heating pipe of the chip heater; and by adding a layer of Al with the thickness of 1 micrometer between the chip heater and the SiC chip 2 O 3 The heat transfer of the insulating layer dispersion makes the heating of the SiC chip more even than before, and the heat generated by the SiC chip in the actual use process is simulated more closely in this way, so that the service life and failure mode of the SiC chip can be predicted more accurately.
Compared with the prior art, the SiC chip power cycle experiment device and the method with the controllable temperature can be realized through the special spiral structure of the chip heater and Al 2 O 3 The insulating layer uniformly transfers the heat generated by the chip heater to the surface of the SiC chip, so that the practical use condition of the SiC chip can be simulated more truly and accurately by the experiment, more accurate experimental data and results can be obtained, and the service life and failure mode of the SiC chip can be predicted more conveniently and accurately.
Drawings
FIG. 1 is a schematic diagram of a temperature-controllable SiC chip power cycle experiment device according to an embodiment of the invention
FIG. 2a is a schematic diagram showing a temperature-controllable SiC chip power cycle experiment apparatus in a partial amplification manner according to an embodiment of the invention
FIG. 2b is a schematic diagram showing a temperature-controllable SiC chip power cycle experiment apparatus in a partial amplification manner according to an embodiment of the invention
Detailed Description
In order that the invention may be more readily understood, a detailed description of the invention will be rendered by reference to specific embodiments that are appended drawings. For ease of description, the components in the structures of the drawings of the embodiments are not to scale and thus do not represent actual relative sizes of the structures in the embodiments.
A temperature-controllable SiC chip power cycle experimental device is provided, as shown in FIG. 1. It comprises the following steps: the box body (1), the bearing table (2), the environment heater (3), the cooling water tank (4), the silicone grease (5), the SiC chip (6) and the Al 2 O 3 Insulating layer (7), chip heater (8), thermocouple (9), thermocouple support (10), control computer and constant voltage power supply.
As shown in fig. 1, the bearing table (201) and the bearing table (202) are symmetrically positioned at the middle position inside the box body (1); the environment heater (3) is arranged on the rear wall of the inner side of the box body (1); the cooling water tank (4) is transversely arranged on the two bearing tables (2), three equal-sized round holes are formed in the middle of the left side of the cooling water tank (4) and serve as water inlets (401), and three equal-sized round holes are formed in the lower portion of the right side of the cooling water tank and serve as water outlets (402); the silicone grease (5) is coated on the middle part of the upper surface of the cooling water tank (4), and a SiC chip (6) is placed on the silicone grease; the Al is 2 O 3 An insulating layer (7) is arranged on the SiC chip (6), a chip heater (8) is arranged on the insulating layer, al 2 O 3 The upper and lower surfaces of the insulating layer (7) are respectively adhered to the SiC chip and the chip heater through the adhesive; the thermocouple (9) is suspended at a position which is two millimeters above the chip heater (8), and a thermocouple bracket (10) is arranged on the thermocouple.
The box body (1) is divided into two layers, an outer layer (101) of the box body is a metal frame and provides support for the whole structure, an inner layer (102) of the box body is an insulating layer, the temperature of the inner environment of the box body provided by the environment heater (3) is kept at a set temperature, and the middle part of a box body door (103) is provided with visible glass (104) for observing the condition inside the box body.
The two bearing tables (2) are symmetrically arranged at the middle position of the inner side of the box body (1), and the bearing tables (201) and the bearing tables (202) are used for supporting the cooling water tank (4) and other parts.
The environment heater (3) provides a specified temperature for the internal environment of the box body (1), and is combined with the heat preservation layer of the inner layer (102) of the box body to keep the temperature of the internal environment of the box body at a specified experimental temperature.
The cooling water tank (4) is used for cooling the SiC chip (6). The left side and the right side of the water tank are respectively provided with three equal-sized round holes, wherein the three round holes (401) at the middle part of the left side are water inlets, and the three round holes (402) at the lower part of the right side are water outlets. The cooling water tank (4) is used for cooling the SiC chip (6) which is the experimental target, and after the SiC chip (6) is rapidly heated to the specified temperature by the chip heater (8) and kept for a certain time, the cooling water tank is used for rapidly cooling the SiC chip (6) so as to achieve the aim of accelerating experiments.
The silicon grease (5) provides higher heat dissipation rate for the SiC chip (6), strengthens the effect of the cooling water tank (4), and ensures that the heat of the SiC chip (6) is taken away by the cooling water tank (4) more quickly.
The SiC chip (6) may be a silicon carbide based MOSFET chip.
The Al is 2 O 3 The insulating layer (7) has the function of conducting heat generated by the chip heater (8) to the SiC chip (6) more uniformly through the attribute of the insulating layer, and is non-conductive in a solid state, so that the short circuit phenomenon of the chip is not caused.
After the chip heater (8) is electrified, a large amount of heat can be quickly generated to enable the SiC chip (6) to reach a specified temperature and be kept, and the heating of the SiC chip is more uniform due to the spiral structure of the SiC chip. The SiC chip (6) is then cooled rapidly by the cooling water tank (4). The chip heater (8) is matched with the cooling water tank (4) to circulate the SiC chip (6) once.
The thermocouple (9) is used for measuring the temperature of the SiC chip (6) in real time.
The thermocouple support (10) is used for fixing the thermocouple (9).
The temperature-controllable SiC chip power cycle experimental device is characterized in that an environment heater (3) provides a specified temperature for the interior of a box body (1), and the temperature in the box body is always kept at a set constant temperature by combining an inner heat preservation layer (102) of the box body; then the chip heater (8) heats the SiC chip (6) to a specified temperature by controlling a computerTemperature, wherein Al between the SiC chip (6) and the chip heater (8) 2 O 3 The insulating layer (7) can more uniformly conduct heat generated by a heating pipe of the chip heater (8) to the surface of the SiC chip (6) so as to better simulate the working condition of an actual SiC chip; and then the heat of the SiC chip (6) is taken away by the cooling water tank (4) at the lower part of the SiC chip (6), the temperature of the SiC chip (6) is rapidly reduced, wherein the silicone grease (5) between the SiC chip (6) and the cooling water tank (4) provides higher heat dissipation rate for the SiC chip (6), the effect of the cooling water tank (4) is enhanced, and the heat of the SiC chip (6) is taken away by the cooling water tank (4) more rapidly. The SiC chip (6) completes one-time power circulation, stable power is provided for the environment heater (3) and the chip heater (8) through the stabilized voltage power supply, and the circulation times and the time of each circulation can be set through the control computer, so that the accelerated life experiment of the SiC chip is carried out. In particular, due to the special spiral heating tube of the chip heater (8) and Al 2 O 3 The insulating layers (7) are matched with each other, so that the SiC chip is heated more uniformly, the experiment is more accurate, and the data is more reliable.
Claims (7)
1. The utility model provides a controllable SiC chip power cycle experimental apparatus of temperature which characterized in that includes: box body, bearing table, environment heater, cooling water tank, silicone grease, siC chip and Al 2 O 3 An insulating layer, a chip heater and a thermocouple;
the box body is divided into an inner layer and an outer layer, wherein the outer layer is responsible for bearing load, and the inner layer is responsible for heat preservation; the two bearing tables are symmetrically fixed at the middle position of the inner layer of the box body and used for bearing the cooling water tank; the environment heater is fixed on the side wall of the inner layer of the box body and used for providing stable temperature for the internal environment of the box body and simulating the environment temperature of the SiC chip under the actual working condition;
the cooling water tank cross frame is arranged on the two bearing tables, three holes in the middle of one side are water inlets, and three holes in the lower of the other side are water outlets for rapidly cooling the SiC chip; the silicone grease is coated on the middle part of the upper surface of the cooling water tank, and a SiC chip is placed on the silicone grease; al (Al) 2 O 3 The insulating layer is positioned between the SiC chip and the chip heater; chip heaterLocated at Al 2 O 3 Over the insulating layer; the thermocouple is used for monitoring the temperature of the SiC chip in real time; the thermocouple is suspended above the chip heater and is connected by a thermocouple bracket.
2. The temperature-controllable SiC chip power cycle experiment device of claim 1, wherein the middle part of the box door of the box body is made of visual high-temperature-resistant glass, so as to observe the experiment condition in the box body.
3. The SiC chip power cycle experiment apparatus of claim 1, wherein the silicone grease is used to transfer heat of the SiC chip to the cooling water tank in an accelerating manner, so as to enhance the cooling effect of the cooling water tank.
4. The temperature-controllable SiC chip power cycle experiment apparatus according to claim 1, wherein Al 2 O 3 The insulating layer is positioned between the SiC chip and the chip heater and is adhered to the SiC chip and the chip heater through the adhesive, so that heat is uniformly transferred, and the chip heater can more uniformly heat the SiC chip to simulate actual working conditions.
5. The temperature-controllable SiC chip power cycle experiment apparatus according to claim 1, wherein the chip heater is bonded to Al by a cement 2 O 3 And the upper surface of the insulating layer is used for heating the SiC chip to a specified temperature.
6. The SiC chip power cycle experiment apparatus of claim 1, wherein the chip heater (8) is controlled by a control computer for heating, and the control computer is connected with a regulated power supply.
7. The temperature-controllable SiC chip power cycle experiment device according to claim 1, wherein the experiment method of the device is characterized in that the surface of the SiC chip is more uniform through the spiral heating pipe of the chip heaterIs heated and heated; and by adding a layer of 1 micrometer Al between the chip heater and the SiC chip 2 O 3 The heat transfer of insulating layer dispersion heat makes the heating of SiC chip even, simulates the heat that the SiC chip produced by oneself in the in-service use, predicts its life and failure mode more accurately.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202111178666.2A CN113960446B (en) | 2021-10-10 | 2021-10-10 | SiC chip power cycle experimental apparatus of controllable temperature |
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| CN202111178666.2A CN113960446B (en) | 2021-10-10 | 2021-10-10 | SiC chip power cycle experimental apparatus of controllable temperature |
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| CN113960446A CN113960446A (en) | 2022-01-21 |
| CN113960446B true CN113960446B (en) | 2023-10-10 |
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| CN109738322A (en) * | 2019-01-23 | 2019-05-10 | 重庆理工大学 | The quick thermal fatigue test device of electric iron heated type and experimental method |
| CN112433138A (en) * | 2020-11-09 | 2021-03-02 | 桂林电子科技大学 | IGBT module temperature and stress testing device and method capable of generating heat through power circulation |
| CN112858910A (en) * | 2020-12-24 | 2021-05-28 | 南京能晶电子科技有限公司 | A simulation charging system for test of lithium cell chip |
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2021
- 2021-10-10 CN CN202111178666.2A patent/CN113960446B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104330277A (en) * | 2014-11-14 | 2015-02-04 | 昆山海益博散热器有限公司 | Refrigeration chip type heat pipe performance testing device |
| CN207221947U (en) * | 2017-02-20 | 2018-04-13 | 广东工业大学 | A kind of segmented micro-fluidic chip temperature regulating device |
| CN108704591A (en) * | 2018-08-07 | 2018-10-26 | 山东金德新材料有限公司 | A kind of integrated silicon carbide microchannel reactor of collection heat-exchange system |
| CN109433287A (en) * | 2018-09-27 | 2019-03-08 | 天津航天瑞莱科技有限公司 | A kind of cooling water tank with heat preservation temperature controlling function |
| CN109738322A (en) * | 2019-01-23 | 2019-05-10 | 重庆理工大学 | The quick thermal fatigue test device of electric iron heated type and experimental method |
| CN112433138A (en) * | 2020-11-09 | 2021-03-02 | 桂林电子科技大学 | IGBT module temperature and stress testing device and method capable of generating heat through power circulation |
| CN112858910A (en) * | 2020-12-24 | 2021-05-28 | 南京能晶电子科技有限公司 | A simulation charging system for test of lithium cell chip |
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| CN113960446A (en) | 2022-01-21 |
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