CN113960014B - Quantum dot residue detection circuit, display panel and manufacturing method - Google Patents
Quantum dot residue detection circuit, display panel and manufacturing method Download PDFInfo
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- CN113960014B CN113960014B CN202111217275.7A CN202111217275A CN113960014B CN 113960014 B CN113960014 B CN 113960014B CN 202111217275 A CN202111217275 A CN 202111217275A CN 113960014 B CN113960014 B CN 113960014B
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- 239000002096 quantum dot Substances 0.000 title claims abstract description 175
- 238000001514 detection method Methods 0.000 title claims abstract description 150
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- 238000012360 testing method Methods 0.000 claims abstract description 86
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/66—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light electrically excited, e.g. electroluminescence
Abstract
The application discloses a quantum dot residue detection circuit, a display panel and a manufacturing method, wherein the quantum dot residue detection circuit comprises: the device comprises a detection structure, a unit to be detected and an initialization unit; the detection structure is arranged on the front layer of the quantum dot luminous layer of the display panel and is connected with the control end of the unit to be detected; the detection structure is used for carrying out charge transfer with the quantum dots remained on the detection structure in the process of manufacturing the quantum dot luminescent layer; the initialization unit is connected with the control end of the unit to be tested and is configured to be connected with an initialization voltage, and the initialization unit is used for initializing the voltage of the control end of the unit to be tested; the input end of the unit to be tested is configured to be connected with a test voltage, and the current change size in the unit to be tested is used for representing the residual density of the quantum dots on the detection structure. The quantum dot residue detection circuit can accurately detect the quantum dot residue condition of the front layer of the quantum dot luminous layer.
Description
Technical Field
The application relates to the technical field of display, in particular to a quantum dot residue detection circuit, a display panel and a manufacturing method.
Background
Quantum dot display technology is becoming an important technology for future display by virtue of its high color gamut and high stability. At present, quantum dot light emitting diode (Quantum Dot Light Emitting Diodes, QLED) manufacturing is mainly realized through means of printing, transferring and the like. However, due to the control problems of the printing process, such as position and ink quantity, the stability and the accuracy of the display are not satisfied with the requirements of modern display on high PPI (pixel density), especially more than 300 PPI. The patterning of the QLED material by adopting the photoetching method has the advantages of positioning and processing, and has great advantages and prospects in the field of high PPI in the future. In the current photoetching process, the residual of the front-layer quantum dot material possibly occurs in the exposure and development process, so that the QLED structure is damaged by the residual, the stability of the QLED device is seriously affected, and color mixing and other defects are caused; therefore, how to accurately detect the lithography residue of the quantum dots becomes a current urgent problem to be solved.
Disclosure of Invention
In view of the above problems, the present application provides a quantum dot residue detection circuit, a display panel and a manufacturing method thereof, which can accurately detect the quantum dot residue condition of the front layer of the quantum dot light-emitting layer.
In a first aspect, the present application provides, by way of an embodiment, the following technical solutions:
a quantum dot residue detection circuit, comprising: the device comprises a detection structure, a unit to be detected and an initialization unit;
the detection structure is arranged on the front layer of the quantum dot luminous layer of the display panel and is connected with the control end of the unit to be detected; the detection structure is used for carrying out charge transfer with the quantum dots remained on the detection structure in the process of manufacturing the quantum dot luminescent layer; the initialization unit is connected with the control end of the unit to be tested and is configured to be connected with an initialization voltage, and the initialization unit is used for initializing the voltage of the control end of the unit to be tested; the input end of the unit to be tested is configured to be connected with a test voltage, and the current change size in the unit to be tested is used for representing the residual density of the quantum dots on the detection structure.
Optionally, the unit under test includes at least one transistor under test; the grid electrode of the transistor to be tested is respectively connected with the initialization unit and the detection structure, and the source electrode of the transistor to be tested is configured to be connected with the test voltage.
Optionally, the initializing unit includes at least one capacitor; the capacitor is connected with the grid electrode of the transistor to be tested, and one end of the capacitor connected with the grid electrode of the transistor to be tested is configured to be connected with an initialization voltage.
Optionally, the detection structure is an annular structure and is located at the front layer edge of the quantum dot light-emitting layer.
Optionally, the detection structure, the unit to be detected and the initialization unit are disposed on a glass substrate of the display panel.
Optionally, the method further comprises: at least one auxiliary test transistor; the auxiliary test transistor is connected in series with the unit under test, and the grid electrode of the auxiliary test transistor is configured to be connected with a test control signal, wherein the test control signal is used for controlling the maximum current allowed to pass by the auxiliary test transistor.
Optionally, the device further comprises a compensation unit, wherein the compensation unit is connected with the unit to be tested, and the compensation unit is configured to compensate the current of the unit to be tested.
Optionally, the compensation unit includes: and the output end of the current compensation circuit is connected with the input end of the unit to be tested, and the current compensation circuit is configured to output constant current to the unit to be tested when the voltage of the control end of the unit to be tested is initialized.
Optionally, the current compensation circuit includes: a first switch and a second switch; the first connection end of the first switch is configured to be connected with the initialization voltage, and the second connection end of the first switch is connected with the control end of the unit to be tested; the first connecting end of the second switch is configured to be connected with a constant current, the second connecting end of the second switch is connected with the input end of the unit to be tested, and the opening time sequence or closing time sequence of the first switch is the same as that of the second switch.
Optionally, the compensation unit includes: the input sub-circuit of the voltage compensation circuit is connected with the input end of the unit to be tested, and two ends of the charging sub-circuit of the voltage compensation circuit are respectively connected with the output end and the control end of the unit to be tested.
Optionally, the input sub-circuit includes a third switch, an input end of the third switch is configured to be connected to a compensation voltage, and an output end of the third switch is connected to an input end of the unit to be tested; the charging sub-circuit comprises a fourth switch, the input end of the fourth switch is connected with the output end of the unit to be tested, the output end of the fourth switch is connected with the control end of the unit to be tested, and the opening or closing time sequence of the third switch is the same as that of the fourth switch.
According to the second aspect, based on the same inventive concept, the present application provides, through an embodiment, the following technical solutions:
a quantum dot residue detection method applied to the quantum dot residue detection circuit described in any one of the first aspect, the method comprising:
charging an initialization unit by accessing an initialization voltage so as to initialize the voltage of a control end of the unit to be tested and obtain a first current in the unit to be tested; disconnecting the initialization voltage and accessing the test voltage, starting a preset excitation light source to irradiate the detection structure, and obtaining a second current in the unit to be detected; the quantum dots remained on the detection structure are subjected to charge transfer with the detection structure under the irradiation of the excitation light source; and obtaining the residual density of the quantum dots on the detection structure according to the first current and the second current.
In a third aspect, based on the same inventive concept, the present application provides, by an embodiment, the following technical solutions:
a display panel comprising the quantum dot residue detection circuit of any one of the preceding first aspects.
According to the fourth aspect, based on the same inventive concept, the present application provides, through an embodiment, the following technical solutions:
a manufacturing method of a display panel comprises the following steps:
before the quantum dot luminescent layer of the display panel is manufactured, a hole transport layer and a detection structure are manufactured; forming a quantum dot light emitting layer on the hole transport layer; the quantum dot material above the detection structure is etched or peeled off in the process of manufacturing the quantum dot luminescent layer; the detection structure is used for carrying out charge transfer with the quantum dots remained on the detection structure in the process of manufacturing the quantum dot luminescent layer.
Optionally, before the quantum dot light emitting layer of the display panel is fabricated, fabricating a hole transport layer and a detection structure, including:
forming the hole transport layer and a detection structure surrounding the hole transport layer.
The quantum dot residue detection circuit, the display panel and the manufacturing method provided by the embodiment of the application have at least the following technical effects:
through designing a detection structure, utilizing the photovoltaic effect of the quantum dot to generate charge transfer under illumination, adopting a control end of a unit to be detected to induce voltage change caused by charge transfer, changing current in the unit to be detected when the voltage of the control end of the unit to be detected changes, reflecting the residual density of the quantum dot on the detection structure according to the current change condition in the unit to be detected, and obtaining the density of the residual quantum dot through a quantum dot density-current change curve calibrated in advance, namely detecting the residual density of the quantum dot of a front layer of a quantum dot luminescent layer.
The foregoing description is only an overview of the present application, and is intended to be implemented in accordance with the teachings of the present application in order that the same may be more clearly understood and to make the same and other objects, features and advantages of the present application more readily apparent.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for the description of the embodiments will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present application, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art. In the drawings:
fig. 1 shows a schematic block diagram of a quantum dot residue detection circuit according to an embodiment of the present application;
FIG. 2 is a circuit diagram of a first implementation of a quantum dot residue detection circuit according to an embodiment of the present application;
fig. 3 is a schematic structural diagram of a first implementation circuit of a quantum dot residue detection circuit according to an embodiment of the present application, which is fabricated on a glass substrate;
FIG. 4 is a circuit diagram of a second implementation of a quantum dot residue detection circuit according to an embodiment of the present application;
FIG. 5 is a circuit diagram of a third implementation of a quantum dot residue detection circuit according to an embodiment of the present application;
fig. 6 is a schematic structural diagram of a third implementation circuit of a quantum dot residue detection circuit according to an embodiment of the present application, which is fabricated on a glass substrate;
FIG. 7 is a circuit diagram of a fourth implementation of a quantum dot residue detection circuit according to an embodiment of the present application;
fig. 8 is a schematic structural diagram of a fourth implementation circuit of a quantum dot residue detection circuit according to an embodiment of the present application, which is fabricated on a glass substrate;
fig. 9 shows a flowchart of a method for detecting quantum dot residues according to an embodiment of the present application;
fig. 10 is a flowchart illustrating a method for manufacturing a display panel according to an embodiment of the present application.
Detailed Description
Exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. While exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure may be embodied in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art.
The quantum dot residue detection circuit provided by the embodiment of the application can be applied to the manufacturing process of a display panel of a photoetching process, and can be used for detecting the quantum dot material remained in the front layer of the quantum dot luminescent layer after exposure and development; during detection, the detection can be performed after the quantum dot luminescent layer is manufactured, and whether the quantum dot residue exists can be determined; the method can also detect after the quantum dot in any color area is manufactured, and can determine what type or which process causes the quantum dot residue; the method can also be used for detecting after the whole display panel is manufactured, and determining whether the front layer of the quantum dot luminescent layer has quantum dot residues or not so as to verify the reliability and stability of the display panel. The concept of the present application will be illustrated and described in more detail by means of specific examples.
Referring to fig. 1, a quantum dot residue detection circuit 100 according to an embodiment of the present application is provided, the quantum dot residue detection circuit 100 includes: a detection structure 110, a unit under test 120 and an initialization unit 130.
The detection structure 110 is arranged on the front layer of the quantum dot light-emitting layer of the display panel and is connected with the control end of the unit 120 to be detected; a detection structure 110 for performing charge transfer with the quantum dots remaining on the detection structure 110; the initialization unit 130 is connected to the control terminal of the unit under test 120 and configured to access an initialization voltage, and the initialization unit 130 is used for initializing the voltage of the control terminal of the unit under test 120; the input end of the unit under test 120 is configured to be connected to a test voltage, and the magnitude of the current variation in the unit under test 120 is used to characterize the residual density of the quantum dots on the detection structure 110, and the current in the unit under test 120 can be measured by the external current measuring device 150.
Therefore, in the quantum dot residue detection circuit 100 provided in this embodiment, when the front layer of the quantum dot light-emitting layer needs to be detected, the control terminal voltage of the test unit is initialized by the initialization unit 130, so as to ensure that the initial state is consistent during each detection, then the detection structure 110 is irradiated by an appropriate excitation light source, and charge transfer occurs under illumination due to the photovoltaic effect of the quantum dot, and at this time, charge transfer also occurs on the detection structure 110; since the detecting structure 110 is connected to the control end of the unit to be detected 120, and the voltage of the control end of the unit to be detected 120 is unchanged, the voltage of the control end of the unit to be detected 120 is changed to change the current in the unit to be detected 120, the current change condition in the unit to be detected 120 can reflect the residual density of the quantum dots on the detecting structure 110, and the density of the residual quantum dots can be obtained through the quantum dot density-current change curve calibrated in advance, that is, the residual density of the quantum dots on the front layer of the quantum dot luminescent layer is detected.
The quantum dot residue detection circuit 100 of the embodiment can detect in the process, after detecting the residual density of the quantum dots, the residual density threshold generated by standard test can be controlled, if the residual density of the quantum dots is lower than the threshold, the process is continued to be carried out backwards; if the residual density of the quantum dots is higher than the threshold, the quantum dots are further removed by adopting a reworking process or a cleaning/stripping time increasing mode, and the like, and the subsequent process steps are continued until the residual density meets the requirements.
In this embodiment, some implementations of the components of the quantum dot residue detection circuit 100 can be referred to as follows:
for the detection structure 110, the front layer of the quantum dot light-emitting layer is a film layer fabricated before the quantum dot light-emitting layer, including, but not limited to, the glass substrate 210, an electrode layer on the glass substrate 210, a hole injection layer, a hole transport layer, and the like; for example, the detection structure 110 may be formed on the electrode layer of the glass substrate 210, or the detection structure 110 may be formed on the hole injection layer, and the formed detection structure 110 may form a Sensor Pad (Sensor Pad) for sensing the residual quantum dots. When the detection structure 110 is fabricated on the glass substrate 210 or the hole injection layer, the same material as the hole transport layer can be used, and the detection structure 110 can be fabricated together with the hole transport layer, thereby simplifying the fabrication process. Further, the shape of the detecting structure 110 may be a ring structure, a square structure, a bar structure, or the like; for example, the detection structure 110 may surround the front layer edge of the quantum dot light emitting layer, may be co-layer with the hole transport layer, and surround the edge of the hole transport layer. After the quantum dot luminescent layer is completed or the quantum dot of a certain color is manufactured, the quantum dot material on the detection structure 110 is etched or peeled off, so that the residual detection of the quantum dot meal can be performed.
The charge transfer between the detection structure 110 and the quantum dots includes: under the corresponding excitation light source, the carriers on the residual quantum dots are transferred to the detection structure 110; and under the corresponding excitation light source, the residual quantum dots acquire the carriers transferred by the detection structure 110.
For the unit under test 120, the present embodiment can use a transistor under test T1 or use a circuit composed of a plurality of transistors under test T1 and other devices equivalent to the transistor under test T1 to realize the same or similar function of the transistor under test T1, without limitation. The transistor T1 to be tested may be a P-type transistor or an N-type transistor, without limitation. The following description of the present embodiment takes the transistor T1 to be tested as a P-type transistor as an example, as shown in fig. 2. The detecting structure 110 is connected to the gate of the transistor T1 to be detected, and when the charge transfer occurs between the detecting structure 110 and the residual quantum dots, the gate voltage of the transistor T1 to be detected changes; the initialization unit 130 is connected to the gate of the transistor under test T1, and the source of the transistor under test T1 is configured to be connected to the test voltage.
For the initialization unit 130, the present embodiment may use a capacitor C1 or use a circuit formed by a plurality of devices equivalent to the capacitor C1 to implement the same or similar function of the capacitor C1. The following description of the present embodiment takes the initializing unit 130 as a capacitor C1 as an example, as shown in fig. 2. The capacitor C1 is connected to the gate of the transistor T1 to be tested, and one end of the capacitor C1 connected to the gate of the transistor T1 to be tested is configured to be connected to the initialization voltage. When the gate voltage of the transistor T1 to be tested needs to be initialized, the initialization voltage is conducted to the capacitor C1 to be charged, and the initialization of the gate of the transistor T1 to be tested can be completed.
Referring to the quantum dot residue detection circuit 100 shown in fig. 2, when testing is performed, the switch T11 is turned on to charge the capacitor C1, and after the charging is completed, the switch T11 is turned off, and the capacitor C1 is written with the initialization voltage V 0 Then, after the switch T12 is turned on, the current of the transistor T1 to be tested is obtained; at this time, the current of the transistor T1 to be measured isThen, the excitation light source is continuously turned on to irradiate the detection structure 110, and at this time, the detection structure 110 generates additional charge Q to the capacitor C1, and the voltage of the capacitor C1 is changed to +.>The current of the transistor T1 to be measured is again taken in +.>Wherein, is the ratio of width to length, mu is the mobility, C ox Is the gate capacitance, V + To test voltage, V th Is a threshold voltage; the current change caused by the residual quantum dots is +.> The density of the residual quantum dots in the front layer of the quantum dot luminescent layer can be determined through delta I and a pre-calibrated quantum dot density-current change curve. In fig. 2, the switches T11 and T12 may be P-type or N-type transistors, or may be timing controlled relays, without limitation.
It should be noted that, in this embodiment, the current measurement device 150 may use an oscilloscope or other apparatus to implement real-time acquisition and measurement, ensure measurement accuracy, and effectively capture charge transfer of the residual quantum dots, which is also the case in the subsequent implementation.
In the present embodiment, the detecting structure 110, the unit under test 120, and the initializing unit 130 are disposed on the glass substrate 210 of the display panel. That is, in the process of manufacturing the display panel, the corresponding unit to be tested 120 and the initialization unit 130 can be manufactured synchronously, so that complex test circuit design can be avoided, and uniformity and stability of the initialization unit 130 and the unit to be tested 120 are ensured. Test contacts can be reserved at the corresponding positions of the edges of the glass substrate 210, the test contacts are connected with an external circuit board through a common probe 250, and measurement can be completed on the external circuit 230 board. Referring to fig. 3, fig. 3 shows that after the detection structure 110, the transistor T1 to be detected and the capacitor C1 in fig. 2 are disposed on the glass substrate 210, a contact may be reserved for connection of an external probe 250, where the contact TP1 is connected to a control end of the transistor T1 to be detected, the contact TP2 is connected to an output end of the transistor T1 to be detected, the contact TP3 is connected to an input end of the transistor T1 to be detected, and the probe 250 is connected to the external circuit 230 to implement a test. After the quantum dot residue detection is performed on the display panel, the detection structure 110, the unit to be detected 120 and the initialization unit 130 integrated in the display panel may be cut off, or may be reserved, without limitation.
Referring to fig. 4, in some implementations, the quantum dot residue detection circuit 100 further includes: at least one auxiliary test transistor T21; the type of the auxiliary test transistor T21 may be a P-type or an N-type transistor as well, without limitation. The auxiliary test transistor T21 is connected in series with the unit under test 120 (transistor under test T1), and the gate of the auxiliary test transistor T21 is configured to be connected to a test control signal. After initializing the transistor T1 to be tested, controlling the maximum current which can be passed by the auxiliary test transistor T21 to be greater than the transistor T1 to be tested; at this time, the current passing through the transistor T1 to be tested and the auxiliary test transistor T21 is determined by the gate voltage of the transistor T1 to be tested, and therefore, when the gate voltage of the transistor T1 to be tested is changed, the residual density of the quantum dots can be determined by measuring the current change of the auxiliary test transistor T21.
During testing, the gate voltage of the auxiliary test transistor T21 is controlled to enable the upper limit of the on current of the transistor to be high enough, and the switch T13 is used for charging voltage into the capacitor C1 to initialize the transistor T1 to be tested, so that the transistor T1 to be tested works in a variable resistance region; measuring the current I through the transistor T1 under test by means of the auxiliary test transistor T21 01 The method comprises the steps of carrying out a first treatment on the surface of the Then, a preset excitation light source is turned on to illuminate the detection structure 110, and the current I passing through the transistor T1 to be detected is obtained again through the auxiliary test transistor T21 11 The current difference of the two measurements can reflect the density of the residual quantum dots.
The quantum dot residue detection circuit 100 provided in this embodiment further includes a compensation unit. The compensation unit is configured to compensate for the current of the unit under test 120. The consistency of the characteristics of the unit 120 to be tested and the test result can be ensured by the compensation of the compensation unit when different panels are tested each time, so that the result measured based on the quantum dot density-current change curve is accurate and reliable.
In some implementations, the compensation unit includes: the output end of the current compensation circuit is connected with the input end of the unit under test 120, and the current compensation circuit is configured to output constant current to the unit under test 120 when the voltage of the control end of the unit under test 120 is initialized.
Referring to fig. 5, the current compensation circuit may be implemented as follows, and may include: a first switch T14 and a second switch T15. The first connection end of the first switch T14 is configured to be connected to an initialization voltage, and the second connection end of the first switch T14 is connected to the control end of the unit under test 120; the first connection terminal of the second switch T15 is configured to be connected to a constant current (i+), the second connection terminal of the second switch T15 is connected to the input terminal of the unit under test 120, and the opening or closing timings of the first switch T14 and the second switch T15 are the same.
During testing, the first switch T14 and the second switch T15 are firstly started to charge the capacitor C1, and at the moment, the constant current connected to the first connecting end of the second switch T15 is used for connecting the second switch T15 with the transistor T1 to be tested in series, so that the current passing through the transistor T1 to be tested can be kept unchanged all the time during the charging process, and the consistency of initial states during each test is ensured; then, after the capacitor C1 is charged, the first switch T14 and the second switch T15 are turned off, and the input control switch T16 is turned on to obtain the current I of the transistor T1 to be tested 02 The method comprises the steps of carrying out a first treatment on the surface of the Then, the preset excitation light source is turned on to illuminate the detection structure 110, and the current I passing through the transistor T1 to be detected is obtained again 12 The current difference obtained in two times can reflect the density of the residual quantum dots.
Also, when the detection structure 110, the unit under test 120, and the initialization unit 130 in the quantum dot residue detection circuit 100 shown in fig. 5 are disposed on the glass substrate 210 of the display panel, the structure thereof may be as shown in fig. 6. The gate of the transistor T1 to be tested is externally connected with the capacitor C1 through the contact TP11, the output end of the transistor T1 to be tested is externally connected through the TP12, and the input end of the transistor T1 to be tested is configured to be connected with a constant current or a test voltage through the TP 13.
In some implementations, the compensation unit includes: the input sub-circuit of the voltage compensation circuit is connected with the input end of the unit 120 to be tested, and the two ends of the charging sub-circuit of the voltage compensation circuit are respectively connected with the output end and the control end of the unit 120 to be tested.
Referring to fig. 7, the input sub-circuit includes a third switch T17, a first connection terminal of the third switch T17 is configured to be connected to the compensation voltage, and a second connection terminal of the third switch T17 is connected to an input terminal of the unit under test 120; the charging sub-circuit comprises a fourth switch T18, a first connecting end of the fourth switch T18 is connected with an output end of the unit to be tested 120, a second connecting end of the fourth switch T18 is connected with a control end of the unit to be tested 120, and opening or closing time sequences of the third switch T17 and the fourth switch T18 are the same.
During testing, the third switch T17, the fourth switch T18 and the fifth switch T19 are firstly turned on, the initialization voltage and the compensation voltage are connected to charge the capacitor C1, and the transistor T1 to be tested is just turned off after the charging is completed; then, the third switch T17, the fourth switch T18 and the fifth switch T19 are turned off, and the sixth switch T31 and the seventh switch T32 are turned on to ensure that the current passing through the initial state of the transistor T1 to be tested is constant, and the current I of the transistor T1 to be tested can be obtained 03 The method comprises the steps of carrying out a first treatment on the surface of the Then, the preset excitation light source is turned on to illuminate the detection structure 110, and the current I passing through the transistor T1 to be detected is obtained again 13 The current difference obtained in two times can reflect the density of the residual quantum dots.
Also, when the detection structure 110, the unit under test 120, and the initialization unit 130 in the quantum dot residue detection circuit 100 shown in fig. 7 are disposed on the glass substrate 210 of the display panel, the structure thereof may be as shown in fig. 8. The gate of the transistor T1 to be tested and one end of the capacitor C1 are externally connected through the contact TP21, the output end of the transistor T1 to be tested is externally connected through the TP22, the other end of the capacitor C1 is configured to be connected to the test voltage through the TP23, and the input end of the transistor T1 to be tested is configured to be connected to the compensation voltage or the test voltage through the TP 24.
It should be noted that, in the above various possible implementations of the present embodiment, the first switch T14, the second switch T15, the third switch T17, the fourth switch T18, the fifth switch T19, the sixth switch T31, and the seventh switch T32 may be implemented by P-type or N-type transistors, or may be implemented by time-sequence controlled relays, which is not limited.
Referring to fig. 9, based on the same inventive concept, in yet another embodiment of the present application, there is further provided a method for detecting a quantum dot residue, which may be based on the quantum dot residue detection circuit in the foregoing embodiment, the method for detecting a quantum dot residue includes:
step S10: charging an initialization unit by accessing an initialization voltage so as to initialize the voltage of a control end of the unit to be tested and obtain a first current in the unit to be tested;
step S20: disconnecting the initialization voltage and accessing the test voltage, starting a preset excitation light source to irradiate the detection structure, and obtaining a second current in the unit to be detected; the quantum dots remained on the detection structure are subjected to charge transfer with the detection structure under the irradiation of the excitation light source;
step S30: and obtaining the residual density of the quantum dots on the detection structure according to the first current and the second current.
In the steps S10 to S30, the first current is the current in the unit to be measured before the excitation light source irradiates the detection structure; the second current is the current in the unit to be detected after the excitation light source irradiates the detection structure; the residual density of the quantum dots on the detection structure can be determined through a pre-calibrated quantum dot density-current change curve, and specifically, the residual density of the quantum dots on the detection structure can be obtained according to the difference value of the first current and the second current.
It should be noted that, in the method for detecting the residual quantum dot provided in this embodiment, the implementation of each step is described correspondingly when the corresponding structure is introduced in the foregoing embodiment of the detecting circuit for residual quantum dot, so that no further description is provided in this embodiment.
Based on the same inventive concept, in yet another embodiment of the present application, there is further provided a display panel including the quantum dot residue detection circuit described in any one of the foregoing embodiments.
It should be noted that the display panel provided in this embodiment may be applied to any product or component with a display function, such as a mobile phone, a liquid crystal panel, an OLED panel, an electronic paper, a tablet computer, a television, a display, a notebook computer, a digital photo frame, or a navigator. Since the display panel includes the quantum dot residue detection circuit, its specific implementation and technical effects are the same as those of the foregoing embodiments, and for brevity, reference may be made to the corresponding contents of the foregoing embodiments where no mention is made in this section of the embodiment.
Referring to fig. 10, based on the same inventive concept, in yet another embodiment of the present application, there is also provided a method for manufacturing a display panel, the method including:
step S100: and before the quantum dot luminescent layer of the display panel is manufactured, manufacturing a hole transport layer and a detection structure.
In step S100, specifically, the method includes: a hole transport layer and a detection structure surrounding the hole transport layer are formed. The hole transport layer and the detection structure can be formed by adopting the same material, and can be manufactured by the same process steps, so that the addition of extra process steps is avoided.
Step S200: covering quantum dot materials on the hole transport layer and the detection structure, and forming a quantum dot luminescent layer on the hole transport layer; the quantum dot material above the detection structure is etched or peeled off in the process of manufacturing the quantum dot luminescent layer; the detection structure is used for carrying out charge transfer with the quantum dots remained on the detection structure in the process of manufacturing the quantum dot luminescent layer.
Further, the method in this embodiment may further include the following steps: and manufacturing a unit to be detected connected with the detection structure and an initialization unit connected with a control end of the unit to be detected on the glass substrate of the display panel. In this way, the quantum dot residue detection circuit in the foregoing embodiment may be integrated on the glass substrate, that is, in the process of manufacturing the display panel, for example, when manufacturing the electrodes of the display panel, the corresponding unit to be tested and the initialization unit may be manufactured synchronously, so that a complex test circuit design may be avoided, and uniformity and stability of the initialization unit and the unit to be tested are ensured.
The detection of the residual density of the quantum dots can be realized through the manufactured detection structure, after the residual density of the quantum dots is detected, the residual density threshold generated by the standard test can be controlled, and if the residual density of the quantum dots is lower than the threshold, the process is continued to be carried out backwards; if the residual density of the quantum dots is higher than the threshold, the quantum dots are further removed by adopting a reworking process or a cleaning/stripping time increasing mode, and the like, and the subsequent process steps are continued until the residual density meets the requirements.
It should be noted that, because the manufacturing method of the display panel at least forms the detection structure of the quantum dot residue detection circuit in the manufacturing process, the same effects as those of the foregoing embodiments can be achieved through the detection structure, and for brevity, the use method and the corresponding effects of the detection structure can refer to the corresponding content in the foregoing embodiments.
In summary, the quantum dot residue detection circuit, the display panel and the manufacturing method provided by the application have at least the following technical effects:
through designing a detection structure, utilizing the photovoltaic effect of the quantum dot to generate charge transfer under illumination, adopting a control end of a unit to be detected to induce voltage change caused by charge transfer, changing current in the unit to be detected when the voltage of the control end of the unit to be detected changes, reflecting the residual density of the quantum dot on the detection structure according to the current change condition in the unit to be detected, and obtaining the density of the residual quantum dot through a quantum dot density-current change curve calibrated in advance, namely detecting the residual density of the quantum dot of a front layer of a quantum dot luminescent layer.
The term "and/or" as used herein is merely one association relationship describing the associated object, meaning that there may be three relationships, e.g., a and/or B, which may represent: a exists alone, A and B exist together, and B exists alone. In addition, the character "/" herein generally indicates that the front and rear associated objects are an "or" relationship; the word "comprising" does not exclude the presence of elements or steps not listed in a claim. The word "a" or "an" preceding an element does not exclude the presence of a plurality of such elements. The application may be implemented by means of hardware comprising several distinct elements, and by means of a suitably programmed computer. In the unit claims enumerating several means, several of these means may be embodied by one and the same item of hardware. The use of the words first, second, third, etc. do not denote any order. These words may be interpreted as names.
It will be appreciated by those skilled in the art that embodiments of the present application may be provided as a method, system, or computer program product. Accordingly, the present application may take the form of an entirely hardware embodiment, an entirely software embodiment or an embodiment combining software and hardware aspects. Furthermore, the present application may take the form of a computer program product embodied on one or more computer-usable storage media (including, but not limited to, disk storage, CD-ROM, optical storage, and the like) having computer-usable program code embodied therein.
The present application is described with reference to flowchart illustrations and/or block diagrams of methods, apparatus (systems) and computer program products according to embodiments of the application. It will be understood that each flow and/or block of the flowchart illustrations and/or block diagrams, and combinations of flows and/or blocks in the flowchart illustrations and/or block diagrams, can be implemented by computer program instructions. These computer program instructions may be provided to a processor of a general purpose computer, special purpose computer, embedded processor, or other programmable data processing apparatus to produce a machine, such that the instructions, which execute via the processor of the computer or other programmable data processing apparatus, create means for implementing the functions specified in the flowchart flow or flows and/or block diagram block or blocks.
These computer program instructions may also be stored in a computer-readable memory that can direct a computer or other programmable data processing apparatus to function in a particular manner, such that the instructions stored in the computer-readable memory produce an article of manufacture including instruction means which implement the function specified in the flowchart flow or flows and/or block diagram block or blocks.
These computer program instructions may also be loaded onto a computer or other programmable data processing apparatus to cause a series of operational steps to be performed on the computer or other programmable apparatus to produce a computer implemented process such that the instructions which execute on the computer or other programmable apparatus provide steps for implementing the functions specified in the flowchart flow or flows and/or block diagram block or blocks.
While preferred embodiments of the present application have been described, additional variations and modifications in those embodiments may occur to those skilled in the art once they learn of the basic inventive concepts. It is therefore intended that the following claims be interpreted as including the preferred embodiments and all such alterations and modifications as fall within the scope of the application.
It will be apparent to those skilled in the art that various modifications and variations can be made to the present application without departing from the spirit or scope of the application. Thus, it is intended that the present application also include such modifications and alterations insofar as they come within the scope of the appended claims or the equivalents thereof.
Claims (14)
1. A quantum dot residue detection circuit, comprising: the device comprises a detection structure, a unit to be detected and an initialization unit;
the detection structure, the unit to be detected and the initialization unit are arranged on the glass substrate of the display panel,
the hole transmission layer and the detection structure are covered with quantum dot materials, and the quantum dot materials above the detection structure are etched or peeled off in the process of manufacturing the quantum dot luminescent layer; forming a quantum dot luminescent layer on the hole transport layer;
the detection structure is arranged on the front layer of the quantum dot luminous layer of the display panel and is connected with the control end of the unit to be detected; the detection structure is used for carrying out charge transfer with the quantum dots remained on the detection structure in the process of manufacturing the quantum dot luminescent layer;
the initialization unit is connected with the control end of the unit to be tested and is configured to be connected with an initialization voltage, and the initialization unit is used for initializing the voltage of the control end of the unit to be tested;
the input end of the unit to be tested is configured to be connected with a test voltage, and the current change size in the unit to be tested is used for representing the residual density of the quantum dots on the detection structure.
2. The quantum dot residue detection circuit of claim 1, wherein the unit under test comprises at least one transistor under test; the grid electrode of the transistor to be tested is respectively connected with the initialization unit and the detection structure, and the source electrode of the transistor to be tested is configured to be connected with the test voltage.
3. The quantum dot residue detection circuit according to claim 2, wherein the initialization unit comprises at least one capacitor; the capacitor is connected with the grid electrode of the transistor to be tested, and one end of the capacitor connected with the grid electrode of the transistor to be tested is configured to be connected with an initialization voltage.
4. The quantum dot residue detection circuit of claim 1, wherein the detection structure is a ring structure and is located at a front layer edge of the quantum dot light emitting layer.
5. The quantum dot residue detection circuit of claim 1, further comprising: at least one auxiliary test transistor; the auxiliary test transistor is connected in series with the unit under test, and the grid electrode of the auxiliary test transistor is configured to be connected with a test control signal, wherein the test control signal is used for controlling the maximum current allowed to pass by the auxiliary test transistor.
6. The quantum dot residue detection circuit of claim 1, further comprising a compensation unit connected to the unit under test, the compensation unit configured to compensate for a current of the unit under test.
7. The quantum dot residue detection circuit of claim 6, wherein the compensation unit comprises: and the output end of the current compensation circuit is connected with the input end of the unit to be tested, and the current compensation circuit is configured to output constant current to the unit to be tested when the voltage of the control end of the unit to be tested is initialized.
8. The quantum dot residue detection circuit of claim 7, wherein the current compensation circuit comprises: a first switch and a second switch; the first connection end of the first switch is configured to be connected with the initialization voltage, and the second connection end of the first switch is connected with the control end of the unit to be tested; the first connecting end of the second switch is configured to be connected with a constant current, the second connecting end of the second switch is connected with the input end of the unit to be tested, and the opening time sequence or closing time sequence of the first switch is the same as that of the second switch.
9. The quantum dot residue detection circuit of claim 6, wherein the compensation unit comprises: the input sub-circuit of the voltage compensation circuit is connected with the input end of the unit to be tested, and two ends of the charging sub-circuit of the voltage compensation circuit are respectively connected with the output end and the control end of the unit to be tested.
10. The quantum dot residue detection circuit of claim 9, wherein the input sub-circuit comprises a third switch, an input of the third switch configured to be connected to a compensation voltage, an output of the third switch connected to an input of the unit under test; the charging sub-circuit comprises a fourth switch, the input end of the fourth switch is connected with the output end of the unit to be tested, the output end of the fourth switch is connected with the control end of the unit to be tested, and the opening or closing time sequence of the third switch is the same as that of the fourth switch.
11. A method for detecting a quantum dot residue, which is applied to the quantum dot residue detection circuit according to any one of claims 1 to 10, the method comprising:
charging the initializing unit by accessing an initializing voltage so as to initialize the voltage of a control end of the unit to be tested and obtain a first current in the unit to be tested;
disconnecting the initialization voltage and accessing the test voltage, starting a preset excitation light source to irradiate the detection structure, and obtaining a second current in the unit to be detected; the quantum dots remained on the detection structure are subjected to charge transfer with the detection structure under the irradiation of the excitation light source;
and obtaining the residual density of the quantum dots on the detection structure according to the first current and the second current.
12. A display panel comprising the quantum dot residue detection circuit of any one of claims 1-10.
13. A method for manufacturing a display panel, comprising:
before the quantum dot luminescent layer of the display panel is manufactured, a hole transport layer and a detection structure are manufactured;
covering quantum dot materials on the hole transport layer and the detection structure, and forming a quantum dot luminescent layer on the hole transport layer; the quantum dot material above the detection structure is etched or peeled off in the process of manufacturing the quantum dot luminescent layer; the detection structure is used for carrying out charge transfer with the quantum dots remained on the detection structure in the process of manufacturing the quantum dot luminescent layer.
14. The method of claim 13, wherein fabricating the hole transport layer and the detection structure prior to fabricating the quantum dot light emitting layer of the display panel comprises:
forming the hole transport layer and a detection structure surrounding the hole transport layer.
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