CN113957516A - Tray device for growing crystals by horizontal directional crystallization method and use method - Google Patents
Tray device for growing crystals by horizontal directional crystallization method and use method Download PDFInfo
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- CN113957516A CN113957516A CN202111275285.6A CN202111275285A CN113957516A CN 113957516 A CN113957516 A CN 113957516A CN 202111275285 A CN202111275285 A CN 202111275285A CN 113957516 A CN113957516 A CN 113957516A
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- horizontal directional
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- 239000013078 crystal Substances 0.000 title claims abstract description 82
- 238000000034 method Methods 0.000 title claims abstract description 36
- 238000007713 directional crystallization Methods 0.000 title claims abstract description 20
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims abstract description 60
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 38
- 239000010937 tungsten Substances 0.000 claims abstract description 38
- 239000000463 material Substances 0.000 claims description 10
- 239000002994 raw material Substances 0.000 claims description 8
- 238000002425 crystallisation Methods 0.000 claims 1
- 230000008025 crystallization Effects 0.000 claims 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 7
- 229910052750 molybdenum Inorganic materials 0.000 description 7
- 239000011733 molybdenum Substances 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 230000007547 defect Effects 0.000 description 6
- 239000002245 particle Substances 0.000 description 5
- 230000008602 contraction Effects 0.000 description 4
- 238000005336 cracking Methods 0.000 description 4
- 230000005012 migration Effects 0.000 description 4
- 238000013508 migration Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 230000002441 reversible effect Effects 0.000 description 3
- 230000007306 turnover Effects 0.000 description 3
- 238000001816 cooling Methods 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000002109 crystal growth method Methods 0.000 description 1
- 230000007123 defense Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
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Classifications
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
- C30B29/28—Complex oxides with formula A3Me5O12 wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. garnets
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention discloses a tray device for growing crystals by a horizontal directional crystallization method and a using method thereof, wherein the tray device comprises a guide rail and a tray arranged on the guide rail, and a buffer plate is arranged between the guide rail and the tray; a plurality of tungsten filament wires which are transversely arranged are uniformly laid on the upper surface of the tray at intervals along the length direction, so that a crucible to be placed is placed on the tray through the tungsten filament wires, the guide rail is composed of two guide rail rods and a plurality of transverse plates which are uniformly arranged between the two guide rail rods, and a plurality of positioning columns are uniformly and fixedly arranged on the surfaces of the transverse plates at the two ends at intervals respectively; positioning holes for the corresponding positioning columns to penetrate through are formed in the surfaces of the buffer plate and the tray in a one-to-one correspondence mode. The invention effectively solves the problem of stability of the tray when the guide rail is moved, avoids the adhesion of the tray and the bottom of the crucible, reduces the deformation of the tray and the guide rail, prolongs the service life of the tray and the guide rail and improves the crystal growth quality.
Description
Technical Field
The invention relates to the technical field of crystal material preparation, in particular to a tray device for growing crystals by a horizontal directional crystallization method and a using method thereof.
Background
The large-size slab Yb/YAG/Nd/YAG laser crystal is a gain medium mainly used by the conventional high-power solid laser, is applied to the fields of laser weapons, laser cutting and the like, and has important significance for developing high-quality large-size Yb/YAG/Nd/YAG laser crystals in national defense, military industry, industrial production and the like. The horizontal directional crystallization method is a crystal growth method suitable for large-size lath laser crystals, and the laser crystals grown by the method have the advantages of low cost, high crystal quality, no core and side core, small machining allowance and the like.
The laser crystal has a severe requirement on the crystal quality, and the high-power laser is a high-quality laser crystal without any defects such as cracks, cloud layers, bubbles, inclusions, flash particles and the like. In the scheme that adopts at present, the tray directly is arranged in on the guide rail, and relative displacement easily takes place with the guide rail to the tray when the guide rail carries out high temperature slow moving, makes the skew center pin of crucible, causes the temperature field asymmetry, seriously influences crystal quality, and the crucible also directly is arranged in on the tray simultaneously, easily under high temperature with the tray adhesion, increase crystal stress, arouses the crystal fracture, also does not benefit to the separation of growth crystal back crucible and tray. In addition, because the crucible is located in the middle of the tray, the tray and the guide rail are stressed unevenly, and obvious warping deformation is easy to occur after multiple growth.
Disclosure of Invention
Aiming at the defects of the prior art, the technical problems to be solved by the invention are as follows: how to provide a tray device and application method for horizontal directional crystallization method growth crystal, effectively solve the stability of tray when moving the guide rail, avoid tray and crucible bottom bonding, reduce tray and guide rail deformation simultaneously, prolong tray and guide rail life-span, improved crystal growth quality.
In order to solve the technical problems, the invention adopts the following technical scheme:
a tray device for growing crystals by a horizontal directional crystallization method comprises a guide rail and a tray arranged on the guide rail, wherein a buffer plate is arranged between the guide rail and the tray; a plurality of tungsten filament wires which are transversely arranged are uniformly laid on the upper surface of the tray at intervals along the length direction, so that the crucible to be placed is placed on the tray through the tungsten filament wires.
Furthermore, the guide rail is composed of two guide rail rods and a plurality of transverse plates which are uniformly arranged between the two guide rail rods, and a plurality of positioning columns are uniformly and fixedly arranged on the surfaces of the transverse plates at the two ends at intervals respectively; positioning holes for the corresponding positioning columns to penetrate through are formed in the surfaces of the buffer plate and the tray in a one-to-one correspondence mode.
Furthermore, the guide rail and the buffer plate, the buffer plate and the tray, the tray and the tungsten silk thread, and the tungsten silk thread and the crucible are all made of different materials so as to inhibit the bonding of the same materials at high temperature.
Furthermore, the cross plate surfaces at the two ends of the guide rail are respectively provided with 3-5 positioning columns which are uniformly and fixedly installed at intervals, the height of each positioning column is 5-10 mm, and the diameter of each positioning column is 3-6 mm.
Furthermore, the interval between two adjacent tungsten filament wires is 10-30 mm, and the diameter of each tungsten filament wire is 0.3-1 mm.
Furthermore, the thickness of the buffer plate is 0.5-2 mm, and the length and the width of the buffer plate correspond to the bottom size of the tray.
Furthermore, the size of the positioning hole relative to the positioning column is a positive tolerance, and the tolerance is not more than 0.2 mm.
By adopting the use method of the tray device for growing the crystal by the horizontal directional crystallization method, the tray device is taken out of the crystal furnace after the crystal growth is finished each time; taking the tray and the buffer plate down from the guide rail, turning over the buffer plate to be installed on the guide rail so that the original upper surface of the buffer plate faces downwards, and installing the tray on the buffer plate; placing the tungsten wire on the upper surface of the tray again; and after the crucible filled with the raw materials is placed on the tray, the next crystal growth can be carried out.
Further, after the tray device is taken out of the crystal furnace, if the tungsten wire is bent, the bent tungsten wire is straightened and placed on the upper surface of the tray or replaced by a new tungsten wire.
Compared with the prior art, the invention has the beneficial effects that:
1. the guide rail is composed of two guide rail rods and a plurality of transverse plates which are uniformly arranged between the two guide rail rods, so that the strength of the guide rail is improved, and the deformation of the guide rail at high temperature is effectively inhibited.
2. Be provided with the buffer board between guide rail and tray, after growth crystal tray and buffer board take place slight deformation once, carry out turn-over operation to the buffer board and grow next time again, buffer board warping part is relative with tray warpage department, can make here bear bigger stress, produces the strain reverse with last growth, eliminates last deformation effect from this, so used repeatedly, can keep the long-term level and smooth of tray and buffer board.
3. Tungsten wires are arranged between the tray and the crucible as a bedding, so that the tray is prevented from being directly contacted and bonded with the crucible. The tungsten wire is in line contact with the crucible, and the tungsten wire can eliminate stress changes caused by expansion with heat and contraction with cold, raw material melting and the like through partial deformation at high temperature, so that the stress on the crucible and the crystal in the growth process is effectively reduced, and the high-quality growth of the crystal is facilitated.
4. The guide rail and the buffer plate, the buffer plate and the tray, the tray and the tungsten filament yarn, and the tungsten filament yarn and the crucible are all made of different materials, so that the phenomenon of bonding easily occurring at high temperature between the same materials is effectively inhibited, and the bonding between adjacent components is better avoided.
Drawings
For purposes of promoting a better understanding of the objects, aspects and advantages of the invention, reference will now be made in detail to the present invention as illustrated in the accompanying drawings, in which:
fig. 1 is a schematic view of the overall structure of the present invention.
In the figure: guide rail 1, diaphragm 2, reference column 3, buffer board 4, tray 5, locating hole 6, tungsten filament 7.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings.
As shown in fig. 1, the tray device for growing crystals by the horizontal directional crystallization method in the present embodiment comprises a guide rail 1 and a tray 5 placed on the guide rail, wherein a buffer plate 4 is arranged between the guide rail 1 and the tray 5; a plurality of tungsten filament wires 7 which are transversely arranged are evenly laid on the upper surface of the tray 5 along the length direction at intervals, so that the crucible to be placed is placed on the tray through the tungsten filament wires.
In this scheme, set up buffer board 4 between guide rail 1 and tray 5, after accomplishing growth crystal tray and buffer board emergence slight deformation once, carry out the turn-over operation to the buffer board and carry out growth crystal next time again, 4 warping parts of buffer board are relative with 5 warping departments of tray, can make here bear bigger stress, produce and grow the reverse strain of crystal with last time, eliminate 4 deformations of buffer board last time from this, so use repeatedly, can keep leveling for a long time between tray 5 and the buffer board 4. Tungsten filament 7 is arranged between the tray and the crucible as a bedding, so that the direct contact and bonding phenomena between the tray and the crucible are avoided. The tungsten wire is in line contact with the crucible, and the tungsten wire 7 can eliminate stress changes caused by thermal expansion and cold contraction, raw material melting and the like through partial deformation at high temperature, so that the stress on the crucible and the crystal in the growth process is effectively reduced, and the high-quality growth of the crystal is facilitated.
In specific implementation, the guide rail 1 is composed of two guide rail rods and a plurality of transverse plates 2 uniformly arranged between the two guide rail rods, and a plurality of positioning columns 3 are uniformly and fixedly arranged on the surfaces of the transverse plates 2 at the two ends at intervals respectively; positioning holes 6 for the corresponding positioning columns 3 to penetrate through are formed in the surfaces of the buffer plate 2 and the tray 5 in a one-to-one correspondence mode.
Thus, by uniformly installing a plurality of transverse plates 2 at intervals between the two guide rail rods, the strength is increased, and the deformation of the guide rail at high temperature is effectively inhibited. Through reference column 3 with buffer plate 4 and tray 5 and guide rail 1 location, the tray takes place relative displacement when having avoided under high temperature slow movement guide rail, makes the skew center pin of crucible, causes the temperature field asymmetry, influences the growth crystal quality.
During specific implementation, in order to effectively prevent the guide rail 1, the buffer plate 2, the tray 5, the tungsten wire 7 and the crucible from being bonded with each other at high temperature, the guide rail and the buffer plate, the buffer plate and the tray, the tray and the tungsten wire, and the tungsten wire and the crucible are made of different materials, so that bonding is inhibited between the same materials at high temperature, and bonding of adjacent components is better avoided. In this embodiment, the guide rail 1 is made of molybdenum, the buffer plate 4 is made of tungsten, the tray 5 is made of molybdenum, the tungsten wire 7 is made of tungsten, and the crucible is made of molybdenum.
During specific implementation, the surfaces of the transverse plates 2 at the two ends of the guide rail 1 are respectively provided with 3-5 positioning columns which are uniformly and fixedly arranged at intervals, the height of each positioning column is 5-10 mm, and the diameter of each positioning column is 3-6 mm. The reference column that shows in this scheme is 3, is triangle-shaped fixed mounting and corresponds the horizontal plate surface, and reference column installation number also can be according to actual need and decide.
In specific implementation, the interval between two adjacent tungsten filaments 7 is 10-30 mm, and the diameter of each tungsten filament is 0.3-1 mm.
In specific implementation, the thickness of the buffer plate 4 is 0.5-2 mm, and the length and the width of the buffer plate correspond to the bottom size of the tray 5.
During specific implementation, due to expansion with heat and contraction with cold of the material, in order to conveniently take down the buffer plate 4 and the tray 5 from the guide rail 1 after growing the crystal, the size of the positioning hole 6 relative to the positioning column 3 is a positive tolerance, and the tolerance is not more than 0.2 mm.
By adopting the use method of the tray device for growing the crystal by the horizontal directional crystallization method, the tray device is taken out from the crystal furnace after the crystal growth is finished each time; taking the tray and the buffer plate down from the guide rail, turning over the buffer plate to be installed on the guide rail so that the original upper surface of the buffer plate faces downwards, and installing the tray on the buffer plate; placing the tungsten wire on the upper surface of the tray again; and after the crucible filled with the raw materials is placed on the tray, the next crystal growth can be carried out.
In this scheme, after accomplishing growth crystal tray and buffer board and take place slight deformation once, carry out turn-over operation to the buffer board and carry out growth crystal next time again, buffer board warping part is relative with tray warpage department, can make here bear bigger stress, produces the reverse strain with last growth crystal, eliminates last buffer board deformation from this, so repeatedly uses, can keep leveling for a long time between tray and the buffer board. Tungsten wires are arranged between the tray and the crucible as a bedding, so that the direct contact and bonding phenomena between the tray and the crucible are avoided. The tungsten wire is in multi-wire contact with the crucible, and the tungsten wire can eliminate stress changes caused by expansion and contraction, raw material melting and the like through partial deformation at high temperature, so that the stress on the crucible and the crystal in the growth process is effectively reduced, and the high-quality growth of the crystal is facilitated.
In specific implementation, after the tray device is taken out of the crystal furnace, if the tungsten filament yarns are bent, the bent tungsten filament yarns are straightened and then placed on the upper surface of the tray or replaced by new tungsten filament yarns.
The following examples are included to aid in a further understanding of the invention.
Example 1
Nd is grown using a tray apparatus for growing crystals by a horizontal directional crystallization method: YAG crystal.
The guide rail comprises two cylinder type molybdenum rods, has 4 diaphragm between two molybdenum rods, respectively has 3 reference columns on leading the diaphragm at both ends, and reference column height 5mm, diameter 4 mm. The thickness of the buffer plate is 1mm, the length is 500mm, and the width is 120 mm. The size of the bottom of the tray is 500mm multiplied by 120mm, and the height of the tray wall is 50 mm. The corresponding positions of the buffer plate and the tray are provided with positioning holes with the sizes consistent with those of the positioning columns, the sizes of the positioning holes relative to the positioning columns are in positive tolerance, and the tolerance is not larger than 0.2 mm. The diameter of the tungsten wire is 0.5 mm.
During the use, install the buffer board by vertical direction earlier on the guide rail, ensure that every reference column on the diaphragm penetrates corresponding locating hole on the buffer board, the buffer board is stable unable relative guide rail horizontal migration, then install the buffer board top with the tray by vertical direction, ensure that every reference column on the diaphragm penetrates corresponding locating hole on the tray, the stable unable relative guide rail horizontal migration of tray. Then, a plurality of tungsten wires were horizontally placed on a tray, the distance between adjacent tungsten wires was 15mm, and a boat-shaped crucible containing 2kg of a 1% doped Nd: YAG raw material was placed on the tungsten wires, the crucible size being 200X 100X 35 mm. And (4) installing the guide rail in a crystal furnace, vacuumizing, heating and growing crystals. And after the crystal growth is finished, cooling and taking out the crystal, the tray, the buffer plate, the tungsten wire and the guide rail, wherein the size of the crystal is 200 multiplied by 100 multiplied by 26mm, the quality of the crystal is good, and the defects of cracking, cloud layer, flash particles and the like are avoided. The guide rail basically has no warpage, the warpage is less than 1 degree, and the warpage of the tray and the buffer board is less than 3 degrees. The crystal growth process is repeated after the buffer plate is turned over and the tungsten wire is replaced, the crystal, the tray and the guide rail are taken out, the quality of the crystal is good, and the defects of cracking, cloud layer, flash particles and the like are avoided. The guide rail, the tray and the buffer plate are basically free of warpage, and the warping degree is smaller than 1 degree. The process is repeated for 8 times, the guide rail, the tray and the buffer plate are basically free of warpage, and the warping degree is smaller than 2 degrees.
Example 2
The tray device for growing the crystal by the horizontal directional crystallization method is utilized to grow large-size Yb: YAG crystal.
The guide rail comprises two cylinder type molybdenum rods, has 5 diaphragm between two molybdenum rods, respectively has 4 reference columns on the diaphragm at guide rail both ends, and reference column height 8mm, diameter 5 mm. The thickness of the buffer plate is 1mm, the length is 600mm, and the width is 220 mm. The size of the bottom of the tray is 600 multiplied by 220mm, and the height of the wall of the tray is 60 mm. The corresponding positions of the buffer plate and the tray are provided with positioning holes with the sizes consistent with those of the positioning columns, the sizes of the positioning holes relative to the positioning columns are in positive tolerance, and the tolerance is not larger than 0.2 mm. The diameter of the tungsten wire is 0.8 mm.
During the use, install the buffer board by vertical direction earlier on the guide rail, ensure that every reference column on the diaphragm penetrates corresponding locating hole on the buffer board, the buffer board is stable unable relative guide rail horizontal migration, then install the buffer board top with the tray by vertical direction, ensure that every reference column on the diaphragm penetrates corresponding locating hole on the tray, the stable unable relative guide rail horizontal migration of tray.
Then, a plurality of tungsten wires were horizontally placed on the tray with a spacing of 10mm, and a boat-shaped crucible containing 5.8kg of a raw material of Yb/YAG doped with 1% was placed on the tungsten wires with a crucible size of 260X 180X 45 mm. And (4) installing the guide rail in a crystal furnace, vacuumizing, heating and growing crystals. And after the crystal growth is finished, cooling and taking out the crystal, the tray, the buffer plate, the tungsten wire and the guide rail, wherein the size of the crystal is 260 multiplied by 180 multiplied by 32mm, the quality of the crystal is good, and the defects of cracking, cloud layer, flash particles and the like are avoided. The guide rail basically has no warpage, the warpage is less than 1 degree, and the warpage of the tray and the buffer board is less and is about 8 degrees. The crystal growth process is repeated after the buffer plate is turned over and the tungsten wire is replaced, the crystal, the tray and the guide rail are taken out, the quality of the crystal is good, and the defects of cracking, cloud layer, flash particles and the like are avoided. The guide rail, the tray and the buffer plate are basically free of warpage, and the warping degree is less than 1 degree. This process was repeated 4 times with the rail warp about 2 degrees, the tray about 4 degrees, and the bumper about 4 degrees.
Finally, it is noted that the above embodiments are merely intended to illustrate the technical solution of the present invention and not to limit the same, and although the present invention has been described with reference to preferred embodiments thereof, it will be understood by those skilled in the art that various changes in form and details may be made therein. All obvious changes which are introduced by the technical solution of the invention are still within the protective scope of the invention.
Claims (9)
1. A tray device for growing crystals by a horizontal directional crystallization method comprises a guide rail and a tray placed on the guide rail, and is characterized in that: a buffer plate is arranged between the guide rail and the tray; a plurality of tungsten filament wires which are transversely arranged are uniformly laid on the upper surface of the tray at intervals along the length direction, so that the crucible to be placed is placed on the tray through the tungsten filament wires.
2. A tray apparatus for use in a horizontal directional crystallization method for growing crystals according to claim 1, wherein: the guide rail is composed of two guide rail rods and a plurality of transverse plates which are uniformly arranged between the two guide rail rods, and a plurality of positioning columns are uniformly and fixedly arranged on the surfaces of the transverse plates at the two ends at intervals respectively; positioning holes for the corresponding positioning columns to penetrate through are formed in the surfaces of the buffer plate and the tray in a one-to-one correspondence mode.
3. A tray apparatus for use in a horizontal directional crystallization method for growing crystals according to claim 1, wherein: the guide rail and the buffer plate, the buffer plate and the tray, the tray and the tungsten silk thread, and the tungsten silk thread and the crucible are all made of different materials so as to inhibit the bonding of the same materials at high temperature.
4. A tray apparatus for use in a horizontal directional crystallization method for growing crystals according to claim 2, wherein: the cross plate surface at guide rail both ends is 3 ~ 5 reference columns of interval even fixed mounting respectively, and every reference column height is 5 ~ 10mm, and the diameter is 3 ~ 6 mm.
5. A tray apparatus for use in a horizontal directional crystallization method for growing crystals according to claim 1, wherein: the spacing between two adjacent tungsten filament wires is 10-30 mm, and the diameter of each tungsten filament wire is 0.3-1 mm.
6. A tray apparatus for use in a horizontal directional crystallization method for growing crystals according to claim 1, wherein: the thickness of the buffer plate is 0.5-2 mm, and the length and the width of the buffer plate correspond to the bottom size of the tray.
7. A tray apparatus for use in a horizontal directional crystallization method for growing crystals according to claim 2, wherein: the size of the positioning hole relative to the positioning column is a positive tolerance, and the tolerance is not more than 0.2 mm.
8. The use of a tray device for horizontally oriented crystallization of a crystal according to claim 1, wherein: taking out the tray device from the crystal furnace after the crystal growth is finished each time; taking the tray and the buffer plate down from the guide rail, turning over the buffer plate to be installed on the guide rail so that the original upper surface of the buffer plate faces downwards, and installing the tray on the buffer plate; placing the tungsten wire on the upper surface of the tray again; and after the crucible filled with the raw materials is placed on the tray, the next crystal growth can be carried out.
9. The use method of the tray device for the horizontal directional crystallization method crystal growth according to claim 8, characterized in that: and after the tray device is taken out of the crystal furnace, if the tungsten filament yarn is bent, straightening the bent tungsten filament yarn and then placing the tungsten filament yarn on the upper surface of the tray or replacing a new tungsten filament yarn.
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