CN113956839A - Fluorescent film adhesive for packaging high-power LED flip chip - Google Patents
Fluorescent film adhesive for packaging high-power LED flip chip Download PDFInfo
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- CN113956839A CN113956839A CN202111306737.2A CN202111306737A CN113956839A CN 113956839 A CN113956839 A CN 113956839A CN 202111306737 A CN202111306737 A CN 202111306737A CN 113956839 A CN113956839 A CN 113956839A
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- 239000000853 adhesive Substances 0.000 title claims abstract description 38
- 230000001070 adhesive effect Effects 0.000 title claims abstract description 38
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 33
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 21
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 21
- 239000010703 silicon Substances 0.000 claims abstract description 21
- 229920005989 resin Polymers 0.000 claims abstract description 18
- 239000011347 resin Substances 0.000 claims abstract description 18
- 239000001257 hydrogen Substances 0.000 claims abstract description 12
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 12
- 239000003054 catalyst Substances 0.000 claims abstract description 9
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 claims abstract description 9
- 239000002131 composite material Substances 0.000 claims abstract description 8
- 239000003112 inhibitor Substances 0.000 claims abstract description 8
- 239000013008 thixotropic agent Substances 0.000 claims abstract description 4
- -1 methyl vinyl hydrogen Chemical compound 0.000 claims abstract 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 claims description 10
- 229920002554 vinyl polymer Polymers 0.000 claims description 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 7
- 125000005341 metaphosphate group Chemical group 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 6
- WYTZZXDRDKSJID-UHFFFAOYSA-N (3-aminopropyl)triethoxysilane Chemical compound CCO[Si](OCC)(OCC)CCCN WYTZZXDRDKSJID-UHFFFAOYSA-N 0.000 claims description 5
- JQZGUQIEPRIDMR-UHFFFAOYSA-N 3-methylbut-1-yn-1-ol Chemical compound CC(C)C#CO JQZGUQIEPRIDMR-UHFFFAOYSA-N 0.000 claims description 5
- 229910004674 SiO0.5 Inorganic materials 0.000 claims description 4
- 229910020388 SiO1/2 Inorganic materials 0.000 claims description 2
- 229910052681 coesite Inorganic materials 0.000 claims description 2
- 229910052906 cristobalite Inorganic materials 0.000 claims description 2
- 125000000524 functional group Chemical group 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- 229910052682 stishovite Inorganic materials 0.000 claims description 2
- 229910052905 tridymite Inorganic materials 0.000 claims description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims 2
- 229910021485 fumed silica Inorganic materials 0.000 claims 2
- NECRQCBKTGZNMH-UHFFFAOYSA-N 3,5-dimethylhex-1-yn-3-ol Chemical compound CC(C)CC(C)(O)C#C NECRQCBKTGZNMH-UHFFFAOYSA-N 0.000 claims 1
- COWFALGRNJAHKW-UHFFFAOYSA-N 3,6-dimethylhept-1-yn-3-ol Chemical compound CC(C)CCC(C)(O)C#C COWFALGRNJAHKW-UHFFFAOYSA-N 0.000 claims 1
- OWRXWSVBJIIORE-UHFFFAOYSA-N 3,7,11-trimethyldodec-1-yn-3-ol Chemical compound CC(C)CCCC(C)CCCC(C)(O)C#C OWRXWSVBJIIORE-UHFFFAOYSA-N 0.000 claims 1
- ZDWQSEWVPQWLFV-UHFFFAOYSA-N C(CC)[Si](OC)(OC)OC.[O] Chemical compound C(CC)[Si](OC)(OC)OC.[O] ZDWQSEWVPQWLFV-UHFFFAOYSA-N 0.000 claims 1
- 238000007259 addition reaction Methods 0.000 claims 1
- LIKFHECYJZWXFJ-UHFFFAOYSA-N dimethyldichlorosilane Chemical compound C[Si](C)(Cl)Cl LIKFHECYJZWXFJ-UHFFFAOYSA-N 0.000 claims 1
- NKSJNEHGWDZZQF-UHFFFAOYSA-N ethenyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)C=C NKSJNEHGWDZZQF-UHFFFAOYSA-N 0.000 claims 1
- JLUFWMXJHAVVNN-UHFFFAOYSA-N methyltrichlorosilane Chemical compound C[Si](Cl)(Cl)Cl JLUFWMXJHAVVNN-UHFFFAOYSA-N 0.000 claims 1
- 229920001296 polysiloxane Polymers 0.000 claims 1
- 238000004381 surface treatment Methods 0.000 claims 1
- NBXZNTLFQLUFES-UHFFFAOYSA-N triethoxy(propyl)silane Chemical compound CCC[Si](OCC)(OCC)OCC NBXZNTLFQLUFES-UHFFFAOYSA-N 0.000 claims 1
- 238000004383 yellowing Methods 0.000 abstract description 6
- 239000002994 raw material Substances 0.000 abstract description 5
- 230000007774 longterm Effects 0.000 abstract description 4
- 125000004435 hydrogen atom Chemical group [H]* 0.000 abstract 1
- 238000012423 maintenance Methods 0.000 abstract 1
- 238000002834 transmittance Methods 0.000 abstract 1
- 238000002156 mixing Methods 0.000 description 13
- 238000012360 testing method Methods 0.000 description 11
- 239000000047 product Substances 0.000 description 9
- 238000000034 method Methods 0.000 description 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 8
- 238000002360 preparation method Methods 0.000 description 7
- 238000001914 filtration Methods 0.000 description 5
- 239000000565 sealant Substances 0.000 description 5
- 238000005303 weighing Methods 0.000 description 5
- 239000007789 gas Substances 0.000 description 4
- 239000003292 glue Substances 0.000 description 4
- 229910052697 platinum Inorganic materials 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 230000032683 aging Effects 0.000 description 2
- 239000000084 colloidal system Substances 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005496 eutectics Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000013065 commercial product Substances 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 239000003431 cross linking reagent Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- ARLJCLKHRZGWGL-UHFFFAOYSA-N ethenylsilicon Chemical compound [Si]C=C ARLJCLKHRZGWGL-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J183/00—Adhesives based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Adhesives based on derivatives of such polymers
- C09J183/04—Polysiloxanes
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
- C09J11/02—Non-macromolecular additives
- C09J11/04—Non-macromolecular additives inorganic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Led Device Packages (AREA)
Abstract
A fluorescent film adhesive for packaging a high-power LED flip chip comprises the following raw materials in parts by weight: 100 parts of methyl vinyl hydrogen-containing organic silicon resin, 0.5-1.5 parts of modified thixotropic agent, 1-3 parts of tackifier, 0.2-0.5 part of catalyst and 0.5-1.0 part of composite inhibitor; the fluorescent film adhesive prepared by the invention adopts MDQ type organic silicon resin, and the resin contains both vinyl groups and active hydrogen groups; and the M structural unit, the D structural unit and the Q structural unit in the molecular structure are optimally designed, so that the molecular structure has a special three-dimensional network space structure. The adhesive has good adhesion with the surface of an LED chip and a fluorescent film after being cured, and has excellent yellowing resistance and light transmittance for long-term application at high temperature, so that the light efficiency maintenance rate of long-term operation of an LED device is ensured.
Description
Technical Field
The invention relates to a fluorescent film adhesive for packaging a high-power LED flip chip and a preparation method thereof, belonging to the technical field of semiconductor light-emitting chip packaging application materials.
Background
With the gradual maturity of the LED packaging technology, the power of a single chip is higher and higher, the packaging integration level is higher and higher, and the heat dissipation requirement for the packaged device is also more and more severe, while the conventional front-mounted chip cannot meet the heat dissipation requirement for high-power high-integration packaging. Chip enterprises develop flip-chip structure chips with better heat dissipation and lighting effect advantages in many times, and solder paste or eutectic soldering is used, so that heat conduction in the working process of the chips is greatly improved, and the working junction temperature of the chips is reduced. Meanwhile, gold electrodes are not needed to be arranged on the front surface of the chip, so that the luminous efficiency of the chip can be further improved, and the performance of a packaging device is greatly improved.
The traditional upright chip is prepared into a light-emitting device by bonding the positive and negative electrodes and a support through an insulating base glue solid crystal, connecting the positive and negative electrodes and the support through a gold wire, an alloy wire or a copper wire by using a gold wire ball welding machine, and pouring sealant mixed with fluorescent powder on the inner point of a cup bowl of the support. In contrast, a flip Chip can Package a light source device by using a Chip Scale Package (CSP for short) technology without using a support, the size of the device is greatly reduced, the packaging density can be greatly improved, and then the device is soldered on a circuit board through solder paste or eutectic, so that the thermal conductivity is greatly improved compared with a normally-mounted Chip which is die-bonded by using an insulating base adhesive. Meanwhile, the CSP level packaging device is beneficial to controlling the product quality and the light source color uniformity, has great advantages on various product performances, and can become a mainstream form of future high-power LED packaging.
For the CSP packaging form, the most important process link is to bond the fluorescent powder film and the flip chip together, so that the adhesive needs to simultaneously ensure excellent adhesion with the fluorescent powder film and the chip surface, and simultaneously ensure that the problems of yellowing and cracking of the adhesive caused by heat generated by chip work in the using process of a device are avoided. At present, packaging enterprises can only use pouring sealant or solid crystal primer to bond a fluorescent film because the market has no special adhesive, and the pouring sealant has low hardness and weak bonding force in the application process and cannot meet the requirements of devices; the die bond base glue is selected for bonding, although the bonding force is enough, the die bond base glue is generally higher in hardness, and the problem that a glue film is cracked after being cured easily occurs in the working process of a high-power device.
With the increasingly competitive market of LEDs, the requirements for packaging devices are increasing, and particularly, products in subdivided application fields have stringent requirements for device performance. It is becoming more and more desirable to design a specialized adhesive suitable for CSP packaging type phosphor film bonding applications. Therefore, by designing the organic silicon resin with a special structure to substantially improve the physical and chemical properties of the material, the special adhesive developed by the invention can effectively improve the stability of the CSP packaging device product, and is a problem to be urgently solved.
Disclosure of Invention
Aiming at the defects of the prior art, the invention aims to provide the adhesive which has strong bonding performance with the surfaces of a fluorescent film and a chip and stable physicochemical properties of non-yellowing and non-tearing of a bonding layer under the long-term working state of a device, and the preparation method thereof. Compared with the traditional combination scheme of vinyl silicon resin and a hydrogen-containing cross-linking agent, the self-crosslinking silicone resin cured rubber mold has better flexibility and is not easy to crack at high temperature, and no phenyl and other easy-to-yellow groups exist in the resin chain segment, so that a packaging device can ensure low light attenuation and high reliability in the long-term working process.
The invention relates to a fluorescent film adhesive for packaging a high-power LED flip chip, which is an organic silicon insulating composite material and comprises the following substances in parts by weight:
in the fluorescent film adhesive for packaging the high-power LED flip chip, the structural formula of the MDQ type organic silicon resin is shown as (1):
[(CH3)3SiO0.5][(CH3)2(CH2＝CH)SiO0.5][(CH3)2SiO][CH3(H)SiO][SiO2] (1)
the molecular weight is 1000-3000, the mass fraction of vinyl is 3-5%, and the mass fraction of hydrogen is 0.15-0.25%.
Furthermore, in order to enhance the adhesive strength and flexibility of the resin cured product, M, D, Q structures in the molecular formula of the MDQ type organic silicon resin are respectively R3SiO1/2、R2SiO、SiO2(R is other functional groups), and the molar ratio of each structural unit is as follows: n is more than 1]:n[D+Q]＜2。
Further, in order to ensure that the cured colloid has high strength and high bonding performance, the molar ratio of each structural unit in the molecular formula of the MDQ type organic silicon resin is as follows: nD > nQ.
The invention also provides a preparation method of the fluorescent film adhesive for packaging the high-power LED flip chip, which comprises the following steps:
(1) weighing raw materials by weight, wherein the raw materials comprise MDQ type organic silicon resin and a modified thixotropic agent;
(2) mixing at 60 deg.C, and cooling to room temperature;
(3) adding the tackifier and the composite inhibitor into the raw materials weighed in the step (2), and uniformly mixing again;
(4) adding the raw materials uniformly mixed in the step (3) into a catalyst and uniformly mixing;
(5) and (3) carrying out post-treatment such as filtering and defoaming on the uniformly mixed adhesive in the step (4) to obtain the fluorescent film adhesive for packaging the LED flip chip.
Drawings
FIG. 1 is a cross-sectional view of a phosphor film adhesive package application of the present invention.
Fig. 2 is a photograph of each sample after the high temperature aging test.
Reference numerals: 1: a fluorescent film; 2: a binder; 3: an LED chip; 4: a circuit substrate; 5: tin paste; 6: and a copper electrode.
Detailed Description
Example 1
The implementation provides a preparation method of a fluorescent film adhesive for packaging a high-power LED flip chip, which comprises the following steps:
weighing 100 parts by weight of MDQ type organic silicon resin (the molecular weight is about 1000, the weight fraction of vinyl is 5.0%, the weight fraction of hydrogen is 0.25%, nM is nD + Q is 2.0, nQ is nD + Q is 0.5), gas silicon modified by hexamethyldisilazane 0.6 part is uniformly mixed at 60 ℃, and then the mixture is cooled to room temperature; then adding 1 part of a mixture of tackifier gamma-glycidoxypropyltrimethoxysilane and gamma-aminopropyltriethoxysilane and 0.5 part of composite inhibitor compounded by trimethyl metaphosphate and methylbutynol, and mixing uniformly again; then adding 0.2 part of Karstedt platinum catalyst and mixing uniformly; and finally, carrying out post-treatment such as filtering, defoaming and the like to obtain the fluorescent film adhesive.
Example 2
The implementation provides a preparation method of a fluorescent film adhesive for packaging a high-power LED flip chip, which comprises the following steps:
weighing 100 parts by weight of MDQ type organic silicon resin (the molecular weight is about 2000, the weight fraction of vinyl is 4.0%, the weight fraction of hydrogen is 0.20%, nM is 1.5, nQ is 0.8), gas silicon modified by hexamethyldisilazane is 0.3 part, evenly mixing at 60 ℃, and cooling to room temperature; then adding 1.5 parts of a mixture of tackifier gamma-glycidoxypropyltrimethoxysilane and gamma-aminopropyltriethoxysilane and 0.8 part of composite inhibitor compounded by trimethyl metaphosphate and methyl butynol, and uniformly mixing; then adding 0.3 part of Karstedt platinum catalyst and mixing uniformly; and finally, carrying out post-treatment such as filtering, defoaming and the like to obtain the fluorescent film adhesive.
Example 3
The implementation provides a preparation method of a fluorescent film adhesive for packaging a high-power LED flip chip, which comprises the following steps:
weighing 100 parts by weight of MDQ type organic silicon resin (the molecular weight is about 3000, the weight fraction of vinyl is 3.0%, the weight fraction of hydrogen is 0.15%, nM is 1.0, nQ is 0.2), gas silicon modified by hexamethyldisilazane is 0.1 part, evenly mixing at 60 ℃, and cooling to room temperature; then adding 2 parts of a mixture of tackifier gamma-glycidoxypropyltrimethoxysilane and gamma-aminopropyltriethoxysilane and 0.5 part of composite inhibitor compounded by trimethyl metaphosphate and methylbutynol, and mixing uniformly again; then adding 0.2 part of Karstedt platinum catalyst and mixing uniformly; and finally, carrying out post-treatment such as filtering, defoaming and the like to obtain the fluorescent film adhesive.
Example 4
The implementation provides a preparation method of a fluorescent film adhesive for packaging a high-power LED flip chip, which comprises the following steps:
weighing 100 parts by weight of MDQ type organic silicon resin (the molecular weight is about 1000, the weight fraction of vinyl is 4.0%, the weight fraction of hydrogen is 0.20%, nM is 1.6, nQ is 0.6), and 0.3 part of gas silicon modified by hexamethyldisilazane is uniformly mixed at 60 ℃, and is cooled to room temperature; then adding 3 parts of a mixture of tackifier gamma-glycidoxypropyltrimethoxysilane and gamma-aminopropyltriethoxysilane and 0.6 part of composite inhibitor compounded by trimethyl metaphosphate and methylbutynol, and mixing uniformly again; then adding 0.3 part of Karstedt platinum catalyst and mixing uniformly; and finally, carrying out post-treatment such as filtering, defoaming and the like to obtain the fluorescent film adhesive.
The fluorescent film adhesives prepared in examples 1, 2, 3, 4 were tested, test 1: peel force test, this example was used to prepare a phosphor film adhesive coating of 25 x 25mil2Flatly attaching the fluorescent powder film to the surface of the chip on the surface of the wafer, curing for 2 hours at 150 ℃, and then testing the peeling force between the wafer and the fluorescent film, wherein the test results are shown in the following table 1; and (3) testing 2: 4h 300 ℃ high temperature aging test, and the test result is shown in figure 2.
Comparative sample 1: pouring sealant (commercial product Beijing kang Mei Te KMT-2095)
Comparative sample 2: gu Jing jiao (commercially available SN-103F from Xinchuan Japan)
Table 1 examples peel force testing
Comparing table 1 and fig. 2, it can be seen that the hardness gradually decreases and the peeling force sequentially decreases after examples 1, 2 and 3 are cured, but the yellowing and powdering properties sequentially increase with decreasing hardness at 300 ℃; example 4 has a consistent hardness after curing, but inferior peel force and yellowing performance compared to example 2. Compared with a contrast sample, the pouring sealant has low hardness after being cured, insufficient bonding force, severe yellowing at high temperature and direct blackening; the stripping force of the solid crystal adhesive product can meet the bonding requirement, but the colloid is easy to crack and gradually pulverize at the high temperature of 300 ℃, and the test results of the embodiment show that the product has greatly improved performances, and the product meets and can further improve the performance of the high-power LED flip chip packaging product.
Descriptions not related to the embodiments of the present invention are well known in the art, and may be implemented by referring to the well-known techniques.
The invention obtains satisfactory trial effect through repeated test verification.
The above embodiments and examples are specific supports for the technical idea of the method for preparing the fluorescent film adhesive for high-power LED flip chip packaging, and the protection scope of the present invention should not be limited thereby, and any equivalent changes or equivalent modifications made on the basis of the technical scheme according to the technical idea of the present invention still belong to the protection scope of the technical scheme of the present invention.
Claims (6)
1. The fluorescent film adhesive for packaging the high-power LED flip chip is characterized by comprising the following components in percentage by weight: 100 parts of methyl vinyl hydrogen-containing organic silicon resin, 0.5-1.5 parts of modified thixotropic agent, 1-3 parts of tackifier, 0.2-0.5 part of catalyst and 0.5-1.0 part of composite inhibitor,
the organic silicon resin is MDQ polysiloxane, wherein the mol ratio of each structural unit in the molecular formula satisfies 1 < n [ M%]:n[D+Q]＜2，n[D]＞n[Q]Wherein M, D, Q has the structure R3SiO1/2、R2SiO、SiO2(R is other functional groups), the molecular weight is 1000-3000, the mass fraction of vinyl is 3-5%, the mass fraction of hydrogen content is 0.15-0.25%, and the specific molecular structural formula (1) is as follows:
[(CH3)3SiO0.5][(CH3)2(CH2＝CH)SiO0.5][(CH3)2SiO][CH3(H)SiO][SiO2] (1)。
2. the fluorescent film adhesive for high-power LED flip chip packaging as claimed in claim 1, wherein: the methyl vinyl hydrogen-containing organic silicon resin is simultaneously grafted with vinyl and silicon hydrogen bonds on a molecular chain segment, and the vinyl and silicon hydrogen bonds can realize addition reaction under certain conditions.
3. The fluorescent film adhesive for high-power LED flip chip packaging as claimed in claim 1, wherein: the modified thixotropic agent is fumed silica subjected to surface treatment by one or more of monomethyltrichlorosilane, dimethyldichlorosilane and hexamethyldisilazane, and the specific surface area of the fumed silica is 250-300 m2/g。
4. The fluorescent film adhesive for high-power LED flip chip packaging as claimed in claim 1, wherein: the tackifier is one or more of gamma-isocyanic acid propyl triethoxy silane, vinyl trimethoxy silane, gamma-glycide ether oxygen propyl trimethoxy silane and gamma-aminopropyl triethoxy silane.
5. The fluorescent film adhesive for high-power LED flip chip packaging as claimed in claim 1, wherein: the catalyst is a Karster catalyst with the concentration of 3000-5000 PPM.
6. The fluorescent film adhesive for high-power LED flip chip packaging as claimed in claim 1, wherein: the mixed inhibitor is a mixture of one of triethyl metaphosphate, trimethyl metaphosphate and triphenyl metaphosphate and one of 3, 7, 11-trimethyldodecyn-3-ol, 3, 6-dimethyl-1-heptyn-3-ol, 3, 5-dimethyl-1-hexyn-3-ol and methylbutynol.
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| CN202111306737.2A CN113956839B (en) | 2021-11-05 | 2021-11-05 | Fluorescent film adhesive for packaging high-power LED flip chip |
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| CN202111306737.2A CN113956839B (en) | 2021-11-05 | 2021-11-05 | Fluorescent film adhesive for packaging high-power LED flip chip |
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| CN102807756A (en) * | 2011-06-02 | 2012-12-05 | 日东电工株式会社 | Silicone resin composition, silicone resin sheet and producing method thereof, and optical semiconductor element device |
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| CN111592651A (en) * | 2019-12-31 | 2020-08-28 | 杭州师范大学 | Low-hydroxyl hydrogen-containing vinyl phenyl organic silicon resin and preparation method thereof |
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| CN108329474A (en) * | 2017-12-26 | 2018-07-27 | 嘉兴市新大陆机电有限公司 | A kind of one-component additional organosilicon impregnating varnish organic siliconresin and its preparation method and application |
| CN111592651A (en) * | 2019-12-31 | 2020-08-28 | 杭州师范大学 | Low-hydroxyl hydrogen-containing vinyl phenyl organic silicon resin and preparation method thereof |
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