CN113956797A - Jet polishing solution and polishing method for oxygen-free copper microstructure functional surface - Google Patents
Jet polishing solution and polishing method for oxygen-free copper microstructure functional surface Download PDFInfo
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- CN113956797A CN113956797A CN202111203121.2A CN202111203121A CN113956797A CN 113956797 A CN113956797 A CN 113956797A CN 202111203121 A CN202111203121 A CN 202111203121A CN 113956797 A CN113956797 A CN 113956797A
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- C09G—POLISHING COMPOSITIONS; SKI WAXES
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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Abstract
The invention provides oxygen-free copper microstructure functional surface jet polishing solution and a polishing method. The polishing solution comprises: based on the total mass of the polishing solution, the particles account for 1-20% by mass percentage; 0.1 to 10 percent of oxidant; 0.01 to 1 percent of complexing agent; 0.1 to 1 percent of pH regulator; 0.001 to 0.1 percent of oxidation balancing agent and the balance of deionized water. Therefore, the polishing solution can remarkably improve the ultraprecise machining efficiency of the surface of the oxygen-free copper microstructure, and simultaneously avoid the oxidation of the oxygen-free copper after machining.
Description
Technical Field
The invention relates to the technical field of metal microstructure processing, in particular to jet polishing solution and a polishing method for a functional surface of an oxygen-free copper structure.
Background
The Micro-structured Surface (Micro-structured Surface) is a Micro-structured Surface with a regular periodic array and capable of realizing specific functions of optics, physics, biology and the like, and the oxygen-free copper has excellent cold processing property, welding property, corrosion resistance and heat dissipation property, and has important application in high-requirement fields of light, electricity, magnetism, heat and the like, so the oxygen-free copper Micro-structured Surface has wide application prospect. The surface of the microstructure is required to have high smoothness and surface roughness, and in the production process, due to production equipment, material characteristics, processing technology and other reasons, the oxygen-free copper surface microstructure firstly adopts a mechanical processing mode and then adopts an ultra-precision processing technology to remove defects such as surface bulges, pits, processing lines, burrs and the like so as to improve the surface quality. Jet polishing is a processing technology capable of realizing atomic-level removal, and a non-damage surface with low surface roughness can be obtained after processing. The jet polishing has the advantages that the jet polishing has low requirements on the shape of a processed sample piece, is particularly suitable for ultraprecise processing of the surface of a complex structure, but the traditional jet polishing material has low removal efficiency, and oxygen-free copper belongs to nonferrous metals, has active molecules and is very easy to oxidize in the production links of all working procedures.
Therefore, the current oxygen-free copper structure functional surface jet polishing solution and polishing method still need to be improved.
Disclosure of Invention
The present invention is directed to solving, at least to some extent, one of the technical problems in the related art. Therefore, the invention aims to provide the jet polishing solution for the functional surface of the oxygen-free copper microstructure and the polishing method, the polishing solution can be used for remarkably improving the ultraprecise machining efficiency of the surface of the oxygen-free copper microstructure, and simultaneously avoiding the oxidation of the oxygen-free copper after machining.
To this end, in one aspect of the present invention, an oxygen-free copper microstructure functional surface jet polishing solution is provided, wherein the polishing solution comprises, by mass percentage based on the total mass of the polishing solution: 1% -20% of particles; 0.1 to 10 percent of oxidant; 0.01 to 1 percent of complexing agent; 0.1 to 1 percent of pH regulator; 0.001% -0.1% of oxidation balancing agent; and the balance of deionized water. Therefore, the polishing solution with the composition can obviously improve the ultraprecise machining efficiency of the surface of the oxygen-free copper microstructure, and simultaneously avoid the oxidation of the oxygen-free copper in the machining process.
In addition, the oxygen-free copper microstructure functional surface jet polishing solution according to the above embodiment of the present invention may also have the following additional technical features:
according to the embodiment of the invention, the polishing solution is a colloidal suspension, and the pH value of the colloidal suspension is 6-8. Therefore, the stability of the polishing solution and the antioxidation effect of the surface of the oxygen-free copper microstructure are improved.
According to an embodiment of the present invention, the particles are at least one of silicon oxide, cerium oxide, aluminum oxide, silicon carbide, iron oxide, zirconium oxide, and diamond. Therefore, the polishing effect of the polishing solution on the surface of the oxygen-free copper microstructure is improved.
According to an embodiment of the invention, the particles have an average particle size of 10-5000 nm. Therefore, the defect of the oxygen-free copper microstructure surface caused by too large particles in the polishing process is avoided.
According to an embodiment of the present invention, the oxidizing agent is at least one of hydrogen peroxide, urea peroxide, peroxyformic acid, peroxyacetic acid, sodium percarbonate, persulfuric acid, persulfate, periodic acid, periodate, perchloric acid, perchlorate, chloric acid, chlorate, hypochlorous acid, hypochlorite, molybdic acid, molybdate, sulfuric acid, sulfate, nitric acid, and nitrate. Therefore, the removal efficiency of the polishing solution on the surface of the oxygen-free copper microstructure is improved.
According to an embodiment of the present invention, the complexing agent is at least one of ethylenediaminetetraacetic acid, aminotrimethylenephosphonic acid, hydroxyethylidenediphosphonic acid, 2-hydroxyphosphonoacetic acid, dihexyltriaminepentamethylenephosphonic acid, 2-phosphono-1, 2, 4-butanetricarboxylic acid, 2-phosphonobutane-1, 2, 4-tricarboxylic acid, glycine, aspartic acid, serine, threonine, cysteine, proline, glutamic acid, histidine, and arginine. Therefore, the removal efficiency of the polishing solution on the surface of the oxygen-free copper microstructure is improved.
According to an embodiment of the invention, the pH adjusting agent is at least one of sodium hydroxide, potassium hydroxide and ammonia water. Therefore, the oxidation resistance of the polishing solution is improved, and the corrosion of the polishing solution to the surface of the oxygen-free copper microstructure is reduced.
According to an embodiment of the invention, the oxidative balancing agent comprises flavonoids, flavonols, flavanoids, isoflavonoids, dihydroisoflavonoids, chalcones, aurones, flavanoids, anthocyanidins and biflavonoids. Thereby, the oxidation performance of the polishing liquid is balanced.
According to an embodiment of the present invention, the oxidation balance agent is at least one of baicalein, baicalin, quercetin, rutin, hesperetin, liquiritin, silymarin, isosilymarin, daidzein, puerarin, rotenone, liquiritigenin, snapdragon, catechin, delphinidin, cyanidin, ginkgetin and isoginkgetin. Thereby, the oxidation performance of the polishing liquid is further balanced.
In another aspect of the invention, a method for polishing an oxygen-free copper microstructure functional surface is provided. According to an embodiment of the invention, the method comprises: and polishing the oxygen-free copper microstructure functional surface by using the polishing solution as a jet flow polishing solution. Therefore, the polishing by using the method has all the advantages of the polishing solution, and the description is omitted. Generally, the method has the advantages of high removal efficiency and good oxidation resistance.
Drawings
The above and/or additional aspects and advantages of the present invention will become apparent and readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings of which:
FIG. 1 is a graph showing the polishing effect of an oxygen-free copper surface after polishing in example 2 of the present invention;
FIG. 2 shows a graph of the polishing depth of an oxygen-free copper surface after polishing in example 2 of the present invention;
FIG. 3 is a graph showing the polishing effect of an oxygen-free copper surface after polishing in comparative example 1;
FIG. 4 shows a graph of the polishing depth of an oxygen-free copper surface after polishing of comparative example 1;
fig. 5 shows a graph of the polishing effect of the oxygen-free copper surface after polishing in comparative example 2.
Detailed Description
The following describes embodiments of the present invention in detail. The following examples are illustrative only and are not to be construed as limiting the invention. The examples, where specific techniques or conditions are not indicated, are to be construed according to the techniques or conditions described in the literature in the art or according to the product specifications. The reagents or instruments used are not indicated by the manufacturer, and are all conventional products commercially available.
In one aspect of the invention, the invention provides an oxygen-free copper microstructure functional surface jet polishing solution, which comprises the following components in percentage by mass based on the total mass of the polishing solution: 1 to 20 percent of particles, 0.1 to 10 percent of oxidant, 0.01 to 1 percent of complexing agent, 0.1 to 1 percent of pH regulator, 0.001 to 0.1 percent of oxidation balancing agent and the balance of deionized water. Therefore, the polishing solution can remarkably improve the ultraprecise machining efficiency of the surface of the oxygen-free copper microstructure and simultaneously avoid the oxidation of the oxygen-free copper after machining.
For convenience of understanding, the following is a brief description of the principle by which the polishing solution of the above composition can achieve the above beneficial effects:
as mentioned above, the processing of the current oxygen-free copper microstructure functional surface is usually performed by a jet polishing method, water is mostly adopted to perform high-pressure polishing in the jet polishing process, the removal efficiency is low, and in addition, oxygen-free copper belongs to nonferrous metals, molecules are active, and the oxygen-free copper is very easy to oxidize in the polishing process, so that the oxygen-free copper surface is blackened. According to the polishing solution provided by the invention, the particles, the oxidizing agent, the complexing agent, the pH regulator and the oxidation balancing agent are compounded, the particles play a mechanical role in jet polishing, the oxidizing agent reacts with copper on the surface of oxygen-free copper to generate copper oxide, and the complexing agent reacts with the copper oxide to generate a fluffy complex easy to leave, so that the removal efficiency of the polishing solution is improved, and the defects caused by the mechanical action of the particles are reduced; in addition, the free radical generated by the oxidation balancing agent in the polishing solution and the oxidant can generate a stable P-pi conjugated structure, so that the chain type chain reaction of the free radical can be effectively inhibited, the oxidation reaction rate is reduced, the phenomenon of blackening of the surface of the oxygen-free copper after polishing due to transitional oxidation is avoided, and the performance of the polishing solution is improved. Meanwhile, the inventors found that if the content of particles in the polishing solution is less than 1 wt%, the removal depth of the polishing solution is low, and if the content of particles is more than 20 wt%, pits appear on the polished surface; meanwhile, if the content of the oxidant is lower than 0.1 wt%, the removal efficiency is low, and if the content of the oxidant is higher than 10 wt%, the surface of the oxygen-free copper microstructure is excessively oxidized to generate a blackening phenomenon; if the content of the complexing agent is lower than 0.01 wt%, insufficient complexing occurs; if the content of the complexing agent is higher than 1 wt%, corrosion defects can be caused, so that the surface roughness difference of different polished areas is large; if the content of the pH regulator is lower than 0.1 wt%, the polishing solution can erode a non-polishing area of the surface of the oxygen-free copper microstructure, and if the content of the pH regulator is higher than 1 wt%, the roughness of the surface of the oxygen-free copper microstructure is increased; if the content of the oxidation balancing agent is higher than 0.1 wt%, only weak or no oxidation reaction occurs, and if the content of the oxidation balancing agent is lower than 0.001 wt%, the surface of the oxygen-free copper microstructure is excessively oxidized or is oxidized unevenly. Therefore, the polishing solution provided by the invention has the advantages of high removal efficiency and good surface quality when the polishing solution is used for polishing the surface of the oxygen-free copper microstructure through the synergistic effect of the particles, the oxidizing agent, the complexing agent, the oxidation balancing agent and the pH regulator, and the surface of the oxygen-free copper microstructure is prevented from blackening.
According to some embodiments of the present invention, the form of the polishing liquid is not particularly limited and may be freely selected by those skilled in the art as needed. According to some embodiments of the present invention, the polishing solution may be a colloidal suspension, such that the polishing solution has excellent stability and redispersibility, and the colloidal suspension has a pH of 6 to 8. The inventor finds that if the pH value is less than 6, the polishing solution can erode the non-polishing area of the oxygen-free copper microstructure surface; if the pH is more than 8, the surface roughness increases after polishing. Further, the kind of the pH adjusting agent in the above polishing liquid is not particularly limited as long as the pH requirement of the polishing liquid can be satisfied, and specifically, the pH adjusting agent includes, but is not limited to, at least one of sodium hydroxide, potassium hydroxide, and ammonia water. Therefore, the pH value of the polishing solution is in the range of 6-8 by adding the pH regulator, so that the oxidation resistance of the polishing solution can be further improved, the blackening of the oxygen-free copper surface in the polishing process can be avoided, and in addition, the corrosion of the polishing solution to the oxygen-free copper surface can be avoided.
According to some embodiments of the present invention, the kind of the particles in the polishing solution is not particularly limited, and may be selected by those skilled in the art according to need, and specifically, may include, but is not limited to, at least one of silicon oxide, cerium oxide, aluminum oxide, silicon carbide, iron oxide, zirconium oxide, and diamond. Therefore, the polishing effect of the polishing solution on the surface of the oxygen-free copper structure is improved. It is to be specifically noted herein that the particle size of the particles is not particularly limited and may be freely selected by those skilled in the art according to the polishing effect, and according to some embodiments of the present invention, the average particle size of the particles may be 10 to 5000nm, and specifically, may be 100nm, 500nm, 1000nm, 2000nm, 3000nm, 4000nm, and the like. Therefore, the defect of the oxygen-free copper surface caused by overlarge particle size in the polishing process is avoided.
According to some embodiments of the present invention, the kind of the oxidizing agent in the polishing solution is not particularly limited and may be freely selected by those skilled in the art as required, and specifically, may include, but is not limited to, at least one of hydrogen peroxide, urea peroxide, peroxyformic acid, peroxyacetic acid, sodium percarbonate, persulfuric acid, persulfate, periodic acid, periodate, perchloric acid, perchlorate, chloric acid, chlorate, hypochlorous acid, hypochlorite, molybdic acid, molybdate, sulfuric acid, sulfate, nitric acid, and nitrate. Therefore, by compounding the oxidizing agent with other components in the polishing solution, the oxidizing agent can chemically react with the surface of oxygen-free copper to generate a substance easy to leave, and the removal efficiency of the polishing solution is improved.
According to other embodiments of the present invention, the kind of complexing agent in the polishing solution is not particularly limited, and may be freely selected by those skilled in the art according to the requirements, and specifically, may be at least one of ethylene diamine tetraacetic acid, aminotrimethylene phosphonic acid, hydroxyethylene diphosphonic acid, 2-hydroxyphosphonoacetic acid, dihexene triamine pentamethylene phosphonic acid, 2-phosphono-1, 2, 4-butane tricarboxylic acid, 2-phosphonobutane-1, 2, 4-tricarboxylic acid, glycine, aspartic acid, serine, threonine, cysteine, proline, glutamic acid, histidine, and arginine. Therefore, the complexing agent in the polishing solution can chemically react with the oxygen-free copper surface to generate an easily-leaving substance, and the removal efficiency of the polishing solution is improved.
According to some embodiments of the present invention, the oxidation balance agent in the polishing solution comprises at least one of flavonoids, flavonols, dihydroflavonoids, isoflavonoids, dihydroisoflavonoids, chalcones, aurones, flavans, anthocyans, and biflavonoids. Therefore, the oxidation balancing agent can react with free radicals generated by an oxidant to generate a stable P-pi conjugated structure, so that the chain type chain reaction of the free radicals can be effectively inhibited, the oxidation reaction rate is effectively controlled, the phenomenon of blackening caused by excessive oxidation of the surface of the oxygen-free copper after polishing is avoided, and the oxidation resistance effect of the polishing solution is improved. Specifically, the oxidation balance agent includes, but is not limited to, at least one of baicalein, baicalin, quercetin, rutin, hesperetin, liquiritin, silymarin, isosilymarin, daidzein, puerarin, rotenone, liquiritigenin, snapdragon, catechin, delphinidin, cyanidin, ginkgetin and isoginkgetin.
In another aspect of the invention, a method of polishing an oxygen-free copper microstructured functional surface is provided. The method comprises the following steps: and polishing the oxygen-free copper microstructure functional surface by using the polishing solution as a jet flow polishing solution. Therefore, the polishing by using the method has all the advantages of the polishing solution, and the description is omitted. Generally, the method has the advantages of high removal efficiency and oxidation resistance.
Performance testing
The polishing solution is evaluated by adopting a jet polishing mode, and the polishing conditions are as follows:
evaluation area: linearly and reciprocally scanning the polishing area;
jet polishing pressure: 0.2-1 Mpa; polishing time: 30 min; polishing distance: 4 mm; moving distance: 5 mm; moving speed: 3 mm/min; polishing angle: 90 deg. vertical jet.
Polishing depth test method:
a white light interferometer is used, a proper objective lens (2.75X, 5X and 10X) and an eyepiece lens (2X, 1X and 0.5X) are selected to be combined, polishing spots or polishing areas are completely placed in a visual field to be measured, a measured three-dimensional height map is intercepted, a cross section is obtained, and the difference between the highest point and the lowest point of a profile curve is polishing depth.
The method for testing the surface roughness of the oxygen-free copper after polishing comprises the following steps:
selecting appropriate objective lens (2.75X, 5X, 10X) and eyepiece lens (2X, 1X, 0.5X) combination by using a white light interferometer, completely placing the polishing spot or polishing region in the visual field, measuring, intercepting an appropriate rectangular region (selected according to spot/shape size) on the polishing spot or polishing region, such as 50 μm, 100 μm, and analyzing roughness to obtain surface roughness information.
Example 1
Adding 20 wt% of 200nm silicon oxide particles, 0.1 wt% of perchloric acid, 0.5 wt% of ethylenediamine tetraacetic acid, 0.5 wt% of sodium hydroxide and 0.005 wt% of liquiritin into deionized water in sequence, continuously stirring until the silicon oxide particles, the perchloric acid and the liquiritin are uniformly mixed to form jet polishing solution, wherein the pH value of the polishing solution is 6.8. The oxygen-free copper surface is polished by jet polishing, and after polishing, the surface is cleaned and dried. The surface defects (scratches, pits) were observed by an optical microscope, and the polishing depth and the surface roughness of the polished sample were measured by a white light interferometer, and the results are shown in table 1.
Example 2
The other operation steps are the same as example 1, except that the polishing solution contains the following components: 10 wt% of 5000nm aluminum oxide particles, 10 wt% of hydrogen peroxide, 0.1 wt% of aspartic acid, 1 wt% of ammonia water and 0.001 wt% of puerarin are continuously stirred until the components are uniformly mixed, and a jet polishing solution is formed after the components are uniformly mixed, wherein the pH value of the polishing solution is 7.5. The surface defects (scratches, pits) were observed by an optical microscope, and the polishing depth and the surface roughness of the polished sample were measured by a white light interferometer, and the results are shown in table 1.
Example 3
The other operation steps are the same as example 1, except that the polishing solution contains the following components: 1 wt% of 1000nm diamond particles, 0.2 wt% of sulfuric acid, 1 wt% of glycine, 1 wt% of potassium hydroxide and 0.002 wt% of delphinidin, continuously stirring until the components are uniformly mixed, and forming a jet polishing solution after the components are uniformly mixed, wherein the pH value of the polishing solution is 8.0. The surface defects (scratches, pits) were observed by an optical microscope, and the polishing depth and the surface roughness of the polished sample were measured by a white light interferometer, and the results are shown in table 1.
Example 4
The other operation steps are the same as example 1, except that the polishing solution contains the following components: 2 wt% of 500nm silicon carbide particles, 0.5 wt% of periodic acid, 1 wt% of 2-hydroxyphosphonoacetic acid, 0.5 wt% of potassium hydroxide and 0.01 wt% of baicalin, continuously stirring until the silicon carbide particles, the periodic acid, the 2-hydroxyphosphonoacetic acid and the baicalin are uniformly mixed, forming jet polishing solution after the uniform mixing, wherein the pH value of the polishing solution is 6.0. The surface defects (scratches, pits) were observed by an optical microscope, and the polishing depth and the surface roughness of the polished sample were measured by a white light interferometer, and the results are shown in table 1.
Comparative example 1
The other operation steps are the same as example 1, except that the polishing solution contains the following components: 5 wt% of alumina particles with the particle size of 1000nm are stirred evenly, and the pH value of the liquid is 6.5. The surface defects (scratches, pits) were observed by an optical microscope, and the polishing depth and the surface roughness of the polished sample were measured by a white light interferometer, and the results are shown in table 1.
Comparative example 2
A commercial copper polishing solution was used, pH 6.0. The surface defects (scratches, pits) were observed by an optical microscope, and the polishing depth and the surface roughness of the polished sample were measured by a white light interferometer, and the results are shown in table 1.
TABLE 1
As can be seen from Table 1, the removal depth of the polishing solution provided by the invention is obviously higher than that of comparative example 1, and after polishing, the surface of the oxygen-free copper microstructure is free from defects and has no phenomenon of blackening; the polishing solution in comparative example 1 only contains an abrasive and water, the removal depth after polishing is small, and the surface of the oxygen-free copper structure is blackened, which indicates that the oxygen-free copper is oxidized; the polishing solution in comparative example 2 is a commercial polishing solution, and after the surface of the oxygen-free copper is polished, the non-polished area of the surface of the oxygen-free copper structure is easily corroded, and the removal effect is poor.
As can be seen from the attached drawings in the specification, after the polishing solution provided by the invention polishes the surface of oxygen-free copper, a polishing area is normal and is not blackened, and the attached drawing 2 can show that the removal depth is large and the removal efficiency is good; FIG. 3 shows that after polishing of comparative example 1, the surface polished area of the oxygen-free copper microstructure is blackened, the oxygen-free copper is oxidized, and it can be seen from FIG. 4 that the removal depth is small and the removal efficiency is low; FIG. 5 is a graph showing the polishing effect of comparative example 2, in which the non-polished region was darkened, indicating that the non-polished region had been corroded by the polishing liquid.
Although embodiments of the present invention have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present invention, and that variations, modifications, substitutions and alterations can be made to the above embodiments by those of ordinary skill in the art within the scope of the present invention.
Claims (10)
1. The oxygen-free copper microstructure functional surface jet polishing solution is characterized by comprising the following components in percentage by mass based on the total mass of the polishing solution:
1% -20% of particles;
0.1 to 10 percent of oxidant;
0.01 to 1 percent of complexing agent;
0.1 to 1 percent of pH regulator;
0.001% -0.1% of oxidation balancing agent; and
the balance being deionized water.
2. The polishing solution according to claim 1, wherein the polishing solution is a colloidal suspension having a pH of 6 to 8.
3. The polishing solution according to claim 1, wherein the particles comprise at least one of silicon oxide, cerium oxide, aluminum oxide, silicon carbide, iron oxide, zirconium oxide, and diamond.
4. The polishing solution according to claim 1 or 3, wherein the average particle diameter of the particles is 10 to 5000 nm.
5. The polishing solution of claim 1, wherein the oxidizing agent comprises at least one of hydrogen peroxide, urea peroxide, peroxyformic acid, peroxyacetic acid, sodium percarbonate, persulfuric acid, persulfate, periodic acid, periodate, perchloric acid, perchlorate, chloric acid, chlorate, hypochlorous acid, hypochlorite, molybdic acid, molybdate, sulfuric acid, sulfate, nitric acid, and nitrate.
6. The polishing solution of claim 1, wherein the complexing agent comprises at least one of ethylenediaminetetraacetic acid, aminotrimethylenephosphonic acid, hydroxyethylidenediphosphonic acid, 2-hydroxyphosphonoacetic acid, dihexyltriaminepentamethylenephosphonic acid, 2-phosphono-1, 2, 4-butanetricarboxylic acid, 2-phosphonobutane-1, 2, 4-tricarboxylic acid, glycine, aspartic acid, serine, threonine, cysteine, proline, glutamic acid, histidine, and arginine.
7. The polishing solution of claim 1, wherein the pH adjusting agent comprises at least one of sodium hydroxide, potassium hydroxide, and ammonia water.
8. The polishing solution according to claim 1, wherein the oxidation balance agent comprises at least one of flavonoids, flavonols, dihydroflavonoids, isoflavonoids, dihydroisoflavonoids, chalcones, aurones, flavans, anthocyans, and biflavonoids.
9. The polishing solution according to claim 1 or 8, wherein the oxidation balance agent comprises at least one of baicalein, baicalin, quercetin, rutin, hesperetin, liquiritin, silybin, isosilybin, daidzein, puerarin, rotenone, liquiritigenin, snapdragon, catechin, delphinidin, cyanidin, ginkgetin, and isoginkgetin.
10. A polishing method for an oxygen-free copper microstructure functional surface is characterized by comprising the following steps: polishing the oxygen-free copper microstructure functional surface with the polishing solution of any one of claims 1 to 9 as a jet polishing solution.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115895454A (en) * | 2022-11-22 | 2023-04-04 | 天津派森新材料技术有限责任公司 | Chemical mechanical polishing solution |
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