CN113948653B - Light emitting transistor, display substrate and display panel - Google Patents
Light emitting transistor, display substrate and display panel Download PDFInfo
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- CN113948653B CN113948653B CN202111204927.3A CN202111204927A CN113948653B CN 113948653 B CN113948653 B CN 113948653B CN 202111204927 A CN202111204927 A CN 202111204927A CN 113948653 B CN113948653 B CN 113948653B
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
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- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
Abstract
The invention provides a light emitting transistor, a display substrate and a display panel. The light-emitting transistor comprises a substrate, a first electrode, a second electrode, a light-emitting functional layer, a dielectric layer and a grid electrode, wherein the first electrode, the second electrode, the light-emitting functional layer, the dielectric layer and the grid electrode are positioned above the substrate; the first electrode is positioned on one side of the light-emitting functional layer, which is close to the substrate, and the second electrode is positioned on one side of the light-emitting functional layer, which is far away from the substrate; and the first pole and the second pole extend to overlap with the orthographic projection of the light-emitting functional layer on the substrate respectively; the grid is positioned on one side of the second pole away from the substrate, the dielectric layer is positioned between the grid and the second pole, and the grid at least partially overlaps with the orthographic projection of the second pole on the substrate; alternatively, the gate is located on a side of the first pole adjacent to the substrate, the dielectric layer is located between the gate and the first pole, and the gate at least partially overlaps with an orthographic projection of the first pole on the substrate. The light-emitting transistor realizes the scheme of the light-emitting transistor device capable of being driven independently, not only reduces the whole thickness of the light-emitting device, but also reduces the power consumption and the preparation cost of the light-emitting device.
Description
Technical Field
The invention belongs to the technical field of display, and particularly relates to a light-emitting transistor, a display substrate and a display panel.
Background
At present, an OLED (Organic Light-Emitting Diode) display product is more and more popular with people because the OLED display product is lighter and thinner, has high brightness, low power consumption, quick response, high definition, good flexibility and high luminous efficiency, and can meet the new requirements of consumers on display technology.
For an OLED display, the driving tube is usually used to drive the organic electroluminescent element through a pixel driving circuit, the pixel driving circuit includes a driving tube, and the driving tube is used to drive the organic electroluminescent element to emit light.
Disclosure of Invention
The present invention addresses the above-described problems by providing a light emitting transistor, a display substrate, and a display panel. The light-emitting transistor realizes the scheme of the light-emitting transistor device capable of being driven independently, not only reduces the overall thickness of the self-emitting device formed by the driving tube and the light-emitting element at present, but also reduces the power consumption and the preparation cost of the self-emitting device.
The invention provides a light-emitting transistor, which comprises a substrate, a first electrode, a second electrode, a light-emitting functional layer, a dielectric layer and a grid electrode, wherein the first electrode, the second electrode, the light-emitting functional layer, the dielectric layer and the grid electrode are arranged above the substrate;
the first electrode is positioned on one side of the light-emitting functional layer close to the substrate, and the second electrode is positioned on one side of the light-emitting functional layer away from the substrate; and the first pole and the second pole extend to overlap with orthographic projection of the light emitting functional layer on the substrate, respectively;
the grid electrode is positioned on one side of the second pole away from the substrate, the dielectric layer is positioned between the grid electrode and the second pole, and the grid electrode at least partially overlaps with the orthographic projection of the second pole on the substrate;
alternatively, the gate is located on a side of the first pole adjacent to the substrate, the dielectric layer is located between the gate and the first pole, and the gate at least partially overlaps with an orthographic projection of the first pole on the substrate.
Optionally, the orthographic projection of the first electrode on the substrate covers the orthographic projection of the light emitting functional layer on the substrate;
the orthographic projection of the second pole on the substrate covers the orthographic projection of the luminous functional layer on the substrate;
the orthographic projection of the grid electrode on the substrate covers the orthographic projection of the luminous functional layer on the substrate.
Optionally, the dielectric layer is lithium fluoride or aluminum oxynitride;
the light-emitting functional layer comprises a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer and an electron injection layer which are sequentially stacked;
the light-emitting layer adopts an organic electroluminescent material or a quantum dot light-emitting material.
Optionally, the thickness of the dielectric layer ranges from 100 to 150nm.
The invention also provides a display substrate which comprises a plurality of the light-emitting transistors.
Optionally, a planarization layer and a pixel defining layer are also included;
the gate of the light emitting transistor is located on the side of the second pole facing away from the substrate,
the first pole and the second pole of the light-emitting transistor are made of the same material and are arranged on the same layer;
the flat layer and the pixel defining layer are sequentially stacked on one side of the first pole and the second pole, which is away from the light emitting transistor substrate;
the pixel defining layer defines a plurality of opening areas, and the light emitting functional layer of the light emitting transistor is positioned in the opening areas;
the first electrode extends to a position between the light-emitting functional layer and the flat layer through a first via hole formed in the flat layer;
the second pole extends between the light emitting functional layer and the dielectric layer through a second via opening in the planarization layer and the pixel defining layer.
Optionally, the pixel defining layer further comprises a blocking layer, which is located at one side of the pixel defining layer away from the substrate and is located between the second poles of any two adjacent light emitting transistors, so as to separate the second poles of any two adjacent light emitting transistors from each other;
the front projection of the blocking layer on the substrate overlaps with the front projection of the pixel defining layer on the substrate, and the front projection of the blocking layer on the substrate does not overlap with the front projection of the second pole on the substrate.
Optionally, the blocking layer is made of an organic topological insulator material;
the thickness range of the blocking layer is 10-15 nm.
Optionally, the first electrode is made of a light-tight conductive material, and the second electrode and the grid electrode are made of a light-tight conductive material;
alternatively, the second pole and/or the gate electrode are made of opaque conductive material, and the first pole is made of transparent conductive material.
The invention also provides a display panel which comprises the display substrate.
The invention has the beneficial effects that: compared with the scheme that the driving tube and the organic electroluminescent element are respectively and independently arranged at present, the luminescent transistor provided by the invention combines the driving transistor and the luminescent element to form the luminescent transistor, the first pole of the driving transistor is multiplexed to be used as the anode of the luminescent element, the second pole of the driving transistor is multiplexed to be used as the cathode of the luminescent element, and the dielectric layer and the grid electrode are arranged, so that the scheme of the luminescent transistor device capable of independently driving is realized, the overall thickness of the luminescent device formed by the driving tube and the luminescent element at present is thinned, and the power consumption and the preparation cost of the luminescent device are reduced.
By adopting the light-emitting transistor, the display substrate provided by the invention not only reduces the thickness of the display substrate, but also reduces the power consumption and the preparation cost of the display substrate.
By adopting the display substrate, the display panel provided by the invention not only has a thinned thickness, but also reduces the power consumption and the preparation cost of the display panel.
Drawings
Fig. 1 is a schematic cross-sectional view of a light emitting transistor according to an embodiment of the present invention;
FIG. 2 is a schematic diagram illustrating charge separation of a dielectric layer under the action of an electric field according to an embodiment of the present invention;
FIG. 3 is a schematic diagram showing charge separation of a dielectric layer under the action of an electric field in a second stage of electron accumulation in accordance with an embodiment of the present invention;
FIG. 4 is a schematic diagram of a light emitting layer with holes on a first electrode and electrons on a second electrode injected into a light emitting functional layer according to an embodiment of the present invention;
FIG. 5 is a schematic diagram of a composite luminescence of carriers formed by holes and electrons in a luminescent layer according to an embodiment of the present invention;
FIG. 6 is a schematic diagram showing charge separation of a dielectric layer under the action of an electric field in a second electrode for more electrons to accumulate in an embodiment of the present invention;
FIG. 7 is a schematic diagram of a carrier formed by more holes and electrons in a light emitting layer for recombination of light emission in an embodiment of the present invention;
fig. 8 is a schematic cross-sectional view of another light emitting transistor according to an embodiment of the present invention;
FIG. 9 is a schematic top view of a partial structure of a display substrate according to an embodiment of the invention;
FIG. 10 is a schematic cross-sectional view of the structure taken along section line AA in FIG. 9;
fig. 11 is a schematic structural diagram of a display substrate for implementing bottom emission display in an embodiment of the present invention.
Wherein the reference numerals are as follows:
1. a substrate; 2. a first pole; 3. a second pole; 4. a light-emitting functional layer; 41. a hole injection layer; 42. a hole transport layer; 43. a light emitting layer; 44. an electron transport layer; 45. an electron injection layer; 5. a dielectric layer; 6. a gate; 7. a flat layer; 71. a first via; 72. a second via; 73. a third via; 8. a pixel defining layer; 9. a blocking layer; 10. a first gate; 11. an active layer; 12. a source electrode; 13. a drain electrode; 14. and an encapsulation layer.
Detailed Description
In order to make the technical scheme of the present invention better understood by those skilled in the art, the following describes a light emitting transistor, a display substrate and a display panel in further detail with reference to the accompanying drawings and the detailed description.
In order to better solve the problem that the thickness of the structure of the traditional OLED display screen is thicker, and the power consumption and the preparation cost are higher, the embodiment of the invention provides a light-emitting transistor, which comprises a substrate 1, a first electrode 2, a second electrode 3, a light-emitting functional layer 4, a dielectric layer 5 and a grid electrode 6 which are positioned above the substrate 1 as shown in figure 1; the first pole 2 is positioned on one side of the light-emitting functional layer 4 close to the substrate 1, and the second pole 3 is positioned on one side of the light-emitting functional layer 4 away from the substrate 1; and the first pole 2 and the second pole 3 extend to overlap with the orthographic projection of the light emitting functional layer 4 on the substrate 1, respectively; the gate electrode 6 is located on a side of the second pole 3 facing away from the substrate 1, the dielectric layer 5 is located between the gate electrode 6 and the second pole 3, and the gate electrode 6 at least partially overlaps with the orthographic projection of the second pole 3 on the substrate 1. Namely, the light emitting transistor provided in this embodiment is a top gate structure.
Optionally, the front projection of the first pole 2 on the substrate 1 covers the front projection of the light-emitting functional layer 4 on the substrate 1; the orthographic projection of the second pole 3 on the substrate 1 covers the orthographic projection of the light-emitting functional layer 4 on the substrate 1; the front projection of the gate electrode 6 onto the substrate 1 covers the front projection of the light-emitting functional layer 4 onto the substrate 1.
Optionally, the dielectric layer 5 is lithium fluoride or aluminum oxynitride; the light-emitting functional layer 4 includes a hole injection layer 41, a hole transport layer 42, a light-emitting layer 43, an electron transport layer 44, and an electron injection layer 45, which are stacked in this order; the light emitting layer 43 employs an organic electroluminescent material (i.e., the light emitting transistor is an OLET light emitting transistor) or a quantum dot light emitting material (i.e., the light emitting transistor is a QLET light emitting transistor). The light emitting layer 43 of the organic electroluminescent material may emit light such as red light, green light, blue light, white light, etc.; the light emitting layer 43 of the quantum dot light emitting material may emit light of red light, green light, blue light, etc.
Alternatively, the first pole 2, the second pole 3 and the gate electrode 6 are made of metal, metal alloy or metal oxide conductive materials, such as metals including magnesium, aluminum, silver, copper or metal alloy materials formed by any of several kinds of metals, or indium zinc oxide or the like.
Alternatively, the thickness of the dielectric layer 5 ranges from 100 to 150nm. The thickness of the gate electrode 6 ranges from 100 to 500nm.
In this embodiment, as shown in fig. 2 and 3, a voltage of-4V is applied to the gate electrode 6, and a voltage of 0V is applied to the second electrode 3; under the influence of the electric field between the gate 6 and the second pole 3, the charge in the dielectric layer 5 separates (fig. 2) and electrons accumulate on the second pole 3 (fig. 3). As shown in fig. 4 and 5, the voltage 0V is applied to the second electrode 3, the voltage 4V is applied to the first electrode 2, and holes on the first electrode 2 and electrons on the second electrode 3 are injected into the light-emitting layer 43 of the light-emitting functional layer 4 (fig. 4), and carriers formed by the holes and electrons recombine and emit light in the light-emitting layer 43 (fig. 5). As shown in fig. 6 and 7, by adjusting the voltage of the gate electrode 6, the light emission luminance of the light emitting layer 43 can be adjusted. If the voltage-6V is applied to the gate electrode 6 and 0V is applied to the second electrode 3, more charges are separated in the dielectric layer 5, more electrons are accumulated on the second electrode 3 (fig. 6) than if the voltage is applied to the gate electrode 6 in fig. 2, the voltage is applied to the first electrode 2, more holes and carriers formed by electrons are recombined in the light emitting layer 43 to emit light, and the light emitting brightness of the light emitting layer 43 is improved (fig. 7).
The preparation of the light emitting transistor in this embodiment includes: a first electrode 2, a light emitting functional layer 4, a second electrode 3, a dielectric layer 5, and a gate electrode 6 are sequentially prepared on a substrate 1. The first electrode 2, the second electrode 3 and the grid electrode 6 can be prepared by adopting a traditional composition process, and can also be prepared by adopting an evaporation process; the grid electrode 6 is prepared by an evaporation process, so that the damage to the light-emitting layer 43 caused by the etching of the grid electrode 6 can be avoided; each film layer in the light-emitting functional layer 4 can be prepared by adopting an evaporation process (for example, the light-emitting layer 43 adopts an organic electroluminescent material) or can be prepared by adopting a printing process (for example, the light-emitting layer 43 adopts a quantum dot light-emitting material); the dielectric layer 5 may be prepared using an evaporation process.
Compared with the scheme that the driving transistor and the organic electroluminescent element are respectively and independently arranged at present, the luminescent transistor provided by the embodiment combines the driving transistor and the luminescent element to form the luminescent transistor, the first pole 2 of the driving transistor is multiplexed to be used as the anode of the luminescent element, the second pole 3 of the driving transistor is multiplexed to be used as the cathode of the luminescent element, and the dielectric layer 5 and the grid electrode 6 are arranged, so that the scheme of the luminescent transistor device capable of independently driving is realized, the overall thickness of the luminescent device formed by the driving transistor and the luminescent element at present is reduced, and the power consumption and the preparation cost of the luminescent device are reduced.
Alternatively, as shown in fig. 8, the gate electrode 6 may also be located on a side of the first pole 2 close to the substrate 1, the dielectric layer 5 being located between the gate electrode 6 and the first pole 2, and the gate electrode 6 at least partially overlapping with the orthographic projection of the first pole 2 on the substrate 1. Namely, the light emitting transistor provided in this embodiment is of a bottom gate structure.
The principle of independent driving luminescence of the bottom gate type luminescence transistor is the same as that of the luminescence transistor with the top gate type structure, and positive voltage lower than positive voltage of the first electrode 2 is only required to be applied to the gate electrode 6, so that positive charge is accumulated on the first electrode 2, negative charge is accumulated on the gate electrode 6, and details are omitted here.
The embodiment of the invention also provides a display substrate which comprises the light-emitting transistor in the embodiment.
As shown in fig. 9 and 10, the display substrate further includes a planarization layer 7 and a pixel defining layer 8; the grid electrode 6 of the light emitting transistor is positioned on one side of the second electrode 3, which is away from the substrate 1, and the first electrode 2 and the second electrode 3 of the light emitting transistor are made of the same material and are arranged in the same layer; the flat layer 7 and the pixel defining layer 8 are sequentially stacked on the sides of the first pole 2 and the second pole 3 facing away from the light emitting transistor substrate 1; the pixel defining layer 8 defines a plurality of opening areas, and the light emitting functional layer 4 of the light emitting transistor is positioned in the opening areas; the first electrode 2 extends between the light emitting functional layer 4 and the planarization layer 7 through a first via hole 71 opened in the planarization layer 7; the second pole 3 extends between the light emitting functional layer 4 and the dielectric layer 5 through a second via 72 opening in the planarization layer 7 and the pixel defining layer 8.
Optionally, the display substrate further includes a blocking layer 9, which is located on a side of the pixel defining layer 8 away from the substrate 1 and between the second poles 3 of any two adjacent light emitting transistors, so as to separate the second poles 3 of any two adjacent light emitting transistors from each other; the front projection of the blocking layer 9 onto the substrate 1 overlaps with the front projection of the pixel defining layer 8 onto the substrate 1, and the front projection of the blocking layer 9 onto the substrate 1 does not overlap with the front projection of the second pole 3 onto the substrate 1. In this embodiment, the blocking layer 9 is located in the non-opening area of the pixel defining layer 8, so that the arrangement of the blocking layer 9 can be avoided to reduce the area of the opening area of the pixel defining layer 8, thereby ensuring the display aperture ratio of the display substrate.
Alternatively, the blocking layer 9 is made of an organic topology insulator material; the thickness of the blocking layer 9 ranges from 10 to 15nm. The thickness of the extension of the second pole 3 is in the range of 5-12 nm.
The preparation method of the display substrate in this embodiment includes: a pattern of the first pole 2 and the second pole 3, a pattern of the flat layer 7 and the first via hole 71 therein, a pattern of the extension portion of the first pole 2, a pattern of the pixel defining layer 8 and the second via hole 72, a pattern of the light emitting function layer 4, a pattern of the blocking layer 9, a pattern of the extension portion of the second pole 3, a pattern of the dielectric layer 5, a pattern of the gate electrode 6 are sequentially prepared on the substrate 1.
Wherein, the extension parts of the blocking layer 9 and the second pole 3 can be prepared by adopting an evaporation process; the blocking layer 9 will repel the material of the second pole 3, so that the material of the second pole 3 in the area where the blocking layer 9 is located cannot be evaporated, and the extension parts of the second poles 3 of different light emitting transistors are patterned, so that the extension parts of the second poles 3 can be reused as the second poles 3 of the light emitting transistors. In addition, the planarization layer 7 and the pixel defining layer 8 are prepared by patterning processes (e.g., steps including film coating, exposure, development, etc.), respectively.
Optionally, the display substrate further includes a pixel driving circuit for driving the light emitting transistors, and the pixel driving circuit may include a capacitor (C) and a plurality of transistors (T), as shown in fig. 10, one of the transistors in the pixel driving circuit includes a first gate electrode 10, an active layer 11, a source electrode 12, and a drain electrode 13, and the drain electrode 13 is connected to the gate electrode 6 of the light emitting transistor through a third via hole 73 opened in the planarization layer 7 and the pixel defining layer 8 to provide a driving signal to the gate electrode 6. The pixel driving circuit may employ conventional 6T1C, 8T1C, etc., and other transistors and capacitors in the pixel driving circuit are not shown one by one.
Optionally, the display substrate further includes an encapsulation layer 14, where the encapsulation layer 14 encapsulates the light emitting transistor and the pixel driving circuit on the substrate 1, preventing intrusion of external moisture and oxygen, and protecting the light emitting functional layer 4 from damage.
Alternatively, as shown in fig. 10, the first electrode 2 is made of a light-impermeable conductive material, and the second electrode 3 and the gate electrode 6 are made of a light-permeable conductive material, such as magnesium, silver, indium zinc oxide, or the like; thereby realizing the top emission display of the display substrate.
Alternatively, as shown in fig. 11, the second pole 3 and/or the gate electrode 6 may be made of a light-impermeable conductive material, and the first pole 2 may be made of a light-permeable conductive material; the base 1 is also made of a light-transmitting material, thereby realizing bottom emission display of the display substrate.
The display substrate provided in the embodiment not only reduces the thickness of the display substrate, but also reduces the power consumption and the manufacturing cost of the display substrate by adopting the light emitting transistor in the embodiment.
The embodiment of the invention also provides a display panel, which comprises the display substrate in the embodiment.
The display panel adopts the display substrate in the embodiment, so that the thickness of the display panel is reduced, and the power consumption and the preparation cost of the display panel are reduced.
The display panel provided by the invention can be any product or component with a display function, such as an OLET panel, an OLET television, a QLET panel, a QLET television, a display, a mobile phone, a navigator and the like.
It is to be understood that the above embodiments are merely illustrative of the application of the principles of the present invention, but not in limitation thereof. Various modifications and improvements may be made by those skilled in the art without departing from the spirit and substance of the invention, and are also considered to be within the scope of the invention.
Claims (8)
1. A display substrate, comprising a plurality of light emitting transistors;
the light emitting transistor comprises a substrate, a first electrode, a second electrode, a light emitting functional layer, a dielectric layer and a grid electrode, wherein the first electrode, the second electrode, the light emitting functional layer, the dielectric layer and the grid electrode are positioned above the substrate;
the first electrode is positioned on one side of the light-emitting functional layer close to the substrate, and the second electrode is positioned on one side of the light-emitting functional layer away from the substrate; and the first pole and the second pole extend to overlap with orthographic projection of the light emitting functional layer on the substrate, respectively;
the grid electrode is positioned on one side of the second pole away from the substrate, the dielectric layer is positioned between the grid electrode and the second pole, and the grid electrode at least partially overlaps with the orthographic projection of the second pole on the substrate;
the display substrate further includes a planarization layer and a pixel defining layer;
the first pole and the second pole of the light-emitting transistor are made of the same material and are arranged on the same layer;
the flat layer and the pixel defining layer are sequentially stacked on one side of the first pole and the second pole, which is away from the light emitting transistor substrate;
the pixel defining layer defines a plurality of opening areas, and the light emitting functional layer of the light emitting transistor is positioned in the opening areas;
the first electrode extends to a position between the light-emitting functional layer and the flat layer through a first via hole formed in the flat layer;
the second pole extends between the light emitting functional layer and the dielectric layer through a second via opening in the planarization layer and the pixel defining layer.
2. The display substrate of claim 1, wherein an orthographic projection of the first pole on the base covers an orthographic projection of the light emitting functional layer on the base;
the orthographic projection of the second pole on the substrate covers the orthographic projection of the luminous functional layer on the substrate;
the orthographic projection of the grid electrode on the substrate covers the orthographic projection of the luminous functional layer on the substrate.
3. The display substrate according to claim 2, wherein the dielectric layer is lithium fluoride or aluminum oxynitride;
the light-emitting functional layer comprises a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer and an electron injection layer which are sequentially stacked;
the light-emitting layer adopts an organic electroluminescent material or a quantum dot light-emitting material.
4. A display substrate according to claim 3, wherein the dielectric layer has a thickness in the range of 100 to 150nm.
5. The display substrate according to claim 1, further comprising a blocking layer located on a side of the pixel defining layer facing away from the base and between the second poles of any two adjacent light emitting transistors to block the second poles of any two adjacent light emitting transistors from each other;
the front projection of the blocking layer on the substrate overlaps with the front projection of the pixel defining layer on the substrate, and the front projection of the blocking layer on the substrate does not overlap with the front projection of the second pole on the substrate.
6. The display substrate of claim 5, wherein the blocking layer is an organic topology insulator material;
the thickness range of the blocking layer is 10-15 nm.
7. The display substrate according to any one of claims 1 to 6, wherein the first electrode is made of a light-impermeable conductive material, and the second electrode and the gate electrode are made of a light-permeable conductive material;
alternatively, the second pole and/or the gate electrode are made of opaque conductive material, and the first pole is made of transparent conductive material.
8. A display panel comprising the display substrate of any one of claims 1-7.
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