CN113948598B - Flexible thin film solar cell and preparation method thereof - Google Patents
Flexible thin film solar cell and preparation method thereof Download PDFInfo
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- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
- H01L31/0481—Encapsulation of modules characterised by the composition of the encapsulation material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0693—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells the devices including, apart from doping material or other impurities, only AIIIBV compounds, e.g. GaAs or InP solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
The invention discloses a flexible thin film solar cell and a preparation method thereof, comprising the following steps: n-Al x Ga 1‑x As single crystal wafer; n-Al x Ga 1‑x Doping the upper and lower surfaces of As single crystal wafer to form p + ‑Al x Ga 1‑x As layer and n + ‑Al x Ga 1‑x As layer, p + ‑Al x Ga 1‑x An antireflection film, a transparent conductive film and a front electrode are sequentially formed on the As layer, n + ‑Al x Ga 1‑x An antireflection film, a transparent conductive film and a back electrode are sequentially formed on the As layer, and polyester materials are respectively coated on the front electrode and the back electrode. The invention mainly uses Al x Ga 1‑x The As single crystal wafer is doped to form a PN junction to prepare the flexible thin film solar cell, so that higher photoelectric conversion efficiency is realized.
Description
Technical Field
The invention relates to the technical field of solar photovoltaic power generation, in particular to a flexible thin film solar cell and a preparation method thereof.
Background
With the advent of energy crisis represented by petroleum worldwide, one is increasingly aware of the limitations, limitations and non-renewable nature of conventional energy sources; at the same time, people are also faced with environmental pollution and extreme weather challenges caused by traditional energy consumption. Therefore, in recent years, various countries pay attention to the development of new energy, especially clean energy, and research and utilization are being conducted on energy forms represented by solar energy, nuclear energy, and geothermal energy. Among them, solar energy is the most abundant energy source, which derives energy forms such as wind energy, biomass energy, water potential energy, etc., while photovoltaic power generation is a very clean energy source because it has no transportation problem, which is certainly one of the main forms of future energy.
Gallium arsenide (GaAs) materials are the most widely used iii-v semiconductor materials in batteries, which possess very excellent photoelectric conversion efficiency, and are a class of photovoltaic cells that are particularly important and have very wide application fields. The GaAs material is a sphalerite structure and has a direct band gap, so that the GaAs material has a higher absorption coefficient than the Si material, and the high absorption coefficient allows the absorption of incident light substantially completely at about 4 μm thickness, so that the material is suitable for use in thin film batteries. Second, the bandgap of GaAs material is about 1.42eV, which is located near the golden bandgap of 1.4eV, thus having high conversion efficiency. Furthermore, the GaAs material with the wide band gap has a small temperature coefficient, so that the GaAs material has excellent working performance at high temperature, and also has good radiation resistance, so that the GaAs material is very suitable for being applied to photovoltaic cells in the fields of condensation and space. Finally, due to the crystal adjustability of the III-V compound semiconductor material, the III-V compound semiconductor material has the advantage of wide band gap range, and the lattice constants of the compounds can be adjusted and matched, so that the material is suitable for the preparation of multi-junction batteries, wherein the battery of GaAs materials is often used as one of sub-batteries of the multi-junction batteries.
AlGaAs materials, which are typical of III-V compound semiconductor materials, have high carrier mobility, are tunable in composition, are lattice-similar to GaAs, and have similar material properties and have been widely studied and used. One of the important applications is the fabrication of AlGaAs/GaAs solar cells using Metal Organic Chemical Vapor Deposition (MOCVD) or Molecular Beam Epitaxy (MBE). Because the AlGaAs material has high light absorption coefficient and is a direct band gap, the band gap can be regulated and controlled along with the change of Al components. Therefore, the AlGaAs material is very suitable for preparing flexible thin film solar cells, and the thin film solar cells are not only a high-efficiency energy product, but also a novel building material, and are easier to be perfectly combined with a building. The photovoltaic power generation module has the advantages of low cost and good weak light property, and is suitable for being combined with buildings.
Disclosure of Invention
The invention provides a flexible thin film solar cell and a preparation method thereof, aiming at the problems existing in the prior art.
The invention discloses a flexible thin film solar cell, comprising: n-Al x Ga 1-x As single crystal wafer;
the n-Al x Ga 1-x Doping the upper and lower surfaces of As single crystal wafer to form p + -Al x Ga 1-x As layer and n + -Al x Ga 1-x An As layer, p + -Al x Ga 1-x An antireflection film, a transparent conductive film and a front electrode are sequentially formed on the As layer, the n is that + -Al x Ga 1-x An antireflection film, a transparent conductive film and a back electrode are sequentially formed on the As layer, and the front electrode and the back electrode are respectively coated with polyester materials.
As a further improvement of the present invention, the polyester material includes one of a high molecular compound, a silicone rubber, a hard resin, and a fluoroplastic.
The invention also discloses a preparation method of the flexible thin film solar cell, which comprises the following steps:
for n-Al x Ga 1-x P-carrying out on the upper surface of As single-chip + Doping of the type to form p + -Al x Ga 1-x An As layer;
for n-Al x Ga 1-x Under surface of As single crystal wafer n + Doping of the type to form n + -Al x Ga 1-x An As layer;
at said p + -Al x Ga 1-x An antireflection film, a transparent conductive film and a front electrode are sequentially prepared on the As layer;
at said n + -Al x Ga 1-x An antireflection film, a transparent conductive film and a back electrode are sequentially formed on the As layer;
and respectively coating polyester materials on the front electrode and the back electrode.
As a further improvement of the present invention, the p + -Al x Ga 1-x The doping concentration of the As layer is 1×10 18 /cm 3 ～1×10 21 /cm 3 The doping thickness is 0.1 μm to 5 μm.
As a further improvement of the present invention, the n + -Al x Ga 1-x The doping concentration of the As layer is 1×10 18 /cm 3 ～1×10 21 /cm 3 The doping thickness is 0.1 μm to 5 μm.
As a further improvement of the present invention, the n-Al x Ga 1-x The doping of the As single crystal wafer adopts thermal diffusion or ion implantation.
As a further improvement of the present invention, the n-Al x Ga 1-x As single crystal wafer 0 < x < 0.8.
Compared with the prior art, the invention has the beneficial effects that:
the invention mainly uses Al x Ga 1-x As single crystal wafers are doped to form PN junctions to prepare the flexible thin film solar cell, the preparation process of the flexible thin film solar cell is simple, the light absorption efficiency is high, a thick silicon substrate is not needed, and the material cost is effectively reduced; in addition, the thin film solar cell can change the forbidden bandwidth by changing the Al component, and can absorb light with different wavelengths. Meanwhile, the surface of the flexible thin film solar cell is coated with a layer of polyester material, so that the inner cell chip can be protected from being corroded by strong acid and strong alkali, and the service life of the solar cell can be prolonged; finally, the flexible thin film solar cell with the polyester material substrate is suitable for places with severe environments such as buildings, can be prepared into components with different light transmittance according to requirements, can replace glass curtain walls, and greatly increases the application field.
Drawings
Fig. 1 is a schematic structural diagram of a flexible thin film solar cell according to an embodiment of the present invention.
In the figure:
1. polyester material, 2. Front electrode, 3. Ohmic contact layer, 4. Transparent conductive film, 5. Antireflection film, 6.p + -Al x Ga 1-x As layer, 7.N-Al x Ga 1-x As single crystal wafer, 8.N + -Al x Ga 1-x As layer, 9. Back electrode.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments of the present invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
The invention is described in further detail below with reference to the attached drawing figures:
as shown in fig. 1, the present invention provides a flexible thin film solar cell comprising: polyester material 1, front electrode 2, ohmic contact layer 3, transparent conductive film 4, antireflection film 5, p + -Al x Ga 1-x As layer 6, n-Al x Ga 1-x As single crystal wafer 7, n + -Al x Ga 1-x An As layer 8 and a back electrode 9; wherein,
n-Al x Ga 1-x doping the upper and lower surfaces of As single crystal wafer 7 to form p + -Al x Ga 1-x As layers 6 and n + -Al x Ga 1-x As layer 8,p + -Al x Ga 1-x An antireflection film 5, a transparent conductive film 4, an ohmic contact layer 3, and a front electrode 2, n are sequentially formed on the As layer 6 + -Al x Ga 1-x An antireflection film 5, a transparent conductive film 4, an ohmic contact layer 3, and a back electrode 9 are sequentially formed on the As layer 8, and the front electrode 2 and the back electrode 9 are respectively coated with the polyester material 1.
The polyester material 1 may be a polymer compound, and may be a material such as silicone rubber, hard resin, or fluoroplastic. The coating material of the silicone rubber can be made into a heat curing form and an ultraviolet curing form. The hard resin optical coating is a fluorine-containing acrylic resin and can be made into a heat curing form and an ultraviolet curing form. The fluoroplastic is a polyvinylidene fluoride material, and is coated on a quartz optical fiber when the optical fiber is drawn, and is solidified and sintered to form a film.
The invention provides a preparation method of a flexible thin film solar cell, which comprises the following steps:
for n-Al x Ga 1-x P on the upper surface of As single wafer 7 + Doping of the type to form p + -Al x Ga 1-x As layer6；
For n-Al x Ga 1-x The lower surface of As single crystal 7 is subjected to n + Doping of the type to form n + -Al x Ga 1-x An As layer 8;
at p + -Al x Ga 1-x An antireflection film 5, a transparent conductive film 4, an ohmic contact layer 3 and a front electrode 2 are sequentially prepared on the As layer 6;
at n + -Al x Ga 1-x An antireflection film 5, a transparent conductive film 4, an ohmic contact layer 3 and a back electrode 9 are sequentially formed on the As layer 8;
polyester material 1 is coated on the front electrode 2 and the back electrode 9, respectively.
The specific preparation method comprises the following steps:
step 1: n-type Al x Ga 1-x Preparation of As single crystal wafer. Firstly, taking a piece of n-type Al prepared by a pulling method x Ga 1-x As single crystal rod. The single crystal bar was then cut into single crystal wafers having a thickness of 10 μm to 100 μm using a thin Jin Gangsi. After cutting, al is added x Ga 1-x The As single crystal plate is adhered to the supporting substrate by an adhesive. N-type Al using Chemical Mechanical Polishing (CMP) x Ga 1-x The As single crystal wafer is thinned, and the thickness of the As single crystal wafer is thinned to 1-5 mu m. After thinning, washing with acetone or alcohol to obtain Al x Ga 1-x The As single crystal wafer is taken off from the supporting substrate;
step 2: al (Al) x Ga 1-x Doping of As single crystal wafers. For cut Al x Ga 1-x Doping the As single crystal wafer to obtain Al x Ga 1-x The As single crystal wafer is placed on a base station in the quartz furnace tube. Then the temperature in the furnace tube is increased to 800-1200 ℃, and then BBr is carried in the furnace 3 The impurity B gradually goes to Al x Ga 1-x Diffusion occurs in defined areas of the As single wafer surface. The flow rate of the gas is 0.1-6L/h, the time is at least 1h, and finally p is formed + -Al x Ga 1-x As. When p is + After the doping is finished, the temperature in the quartz furnace tube is reduced to room temperature, and Al on a base table in the furnace tube is reduced x Ga 1-x Turning the As single crystal wafer to the other side to prepare n + And (5) doping. At this time, the temperature in the furnace tube is raised again to 800-1200 ℃, and at this time, asH is carried in the quartz furnace 3 Or pH of 3 As or P impurities gradually go to Al in the mixed gas of nitrogen and oxygen x Ga 1-x The defined region of the As single wafer diffuses. The flow rate of the gas is 0.1-6L/h, the time is at least 1h, and finally n is formed + -Al x Ga 1-x As。n + After the doping is finished, naturally cooling the temperature in the quartz furnace to room temperature, and carrying out Al on the base station x Ga 1-x Taking out the As single crystal wafer to be reserved for standby;
step 3: and (3) preparing an antireflection film. At p respectively + -Al x Ga 1-x As and n + -Al x Ga 1-x Depositing and growing a layer of silicon nitride film on the As surface by utilizing a Plasma Enhanced Chemical Vapor Deposition (PECVD) method, wherein the deposition temperature is 400-600 ℃, and the deposition thickness is 10-50 nm;
step 4: and (3) preparing a transparent conductive film. Sputtering a layer of transparent conductive film on the antireflection film by magnetron sputtering, wherein the deposited material is indium tin oxide, and the thickness is 10 nm-50 nm;
step 5: ohmic contact layer and electrode preparation. After the transparent conductive film is deposited, preparing electrodes on the upper surface and the lower surface, wherein the electrode material is Ti/Al/Ti/Au;
step 6: coating of polyester material. The polyester material used may be cured and the thickness of the coating is 1 μm to 10. Mu.m. Finally forming a flexible thin film solar cell;
preferably, n-Al x Ga 1-x As single crystal wafer 0 < x < 0.8.
Preferably, p + -Al x Ga 1-x The doping concentration of the As layer is 1×10 18 /cm 3 ～1×10 21 /cm 3 The doping thickness is 0.1 μm to 5 μm.
Preferably n + -Al x Ga 1-x The doping concentration of the As layer is 1×10 18 /cm 3 ～1×10 21 /cm 3 The doping thickness is 0.1 μm to 5 μm.
Preferably, n-type Al x Ga 1-x Doping of the As single crystal wafer can be realized in a diffusion mode or an ion implantation mode;
preferably, the deposition of the anti-reflective film may also be achieved by means of laser deposition.
Example 1
Step 1: n-type Al 0.10 Ga 0.90 Preparation of As single crystal wafer. Firstly, taking a piece of n-type Al prepared by a pulling method 0.10 Ga 0.90 As single crystal rod. The single crystal rod was then cut into single crystal pieces having a thickness of 10 μm by a thin Jin Gangsi. After cutting, al is added 0.10 Ga 0.90 The As single crystal plate is adhered to the Si supporting substrate with an adhesive. N-type Al using Chemical Mechanical Polishing (CMP) 0.10 Ga 0.90 The As single crystal wafer was thinned to a thickness of 1 μm. After thinning, washing with acetone or alcohol to obtain Al 0.10 Ga 0.90 The As single crystal wafer is taken off from the supporting substrate;
step 2: al (Al) 0.10 Ga 0.90 Doping of As single crystal wafers. For cut Al 0.10 Ga 0.90 Doping the As single crystal wafer to obtain Al 0.10 Ga 0.90 The As single crystal wafer is placed on a base station in the quartz furnace tube. Then the temperature in the furnace tube is increased to 900 ℃, and then BBr is carried in the furnace 3 The impurity B gradually goes to Al 0.10 Ga 0.90 Diffusion occurs in defined areas of the As single wafer surface. The flow rate of the gas is 1L/h, the time is 10h, and p is finally formed + -Al 0.10 Ga 0.90 As. When p is + After the doping is finished, the temperature in the quartz furnace tube is reduced to room temperature, and Al on a base table in the furnace tube is reduced 0.10 Ga 0.90 Turning the As single crystal wafer to the other side to prepare n + And (5) doping. At this time, the temperature in the furnace tube is raised to 900 ℃ again, and at this time, asH carried by the furnace tube is introduced into the quartz furnace 3 Or pH of 3 As or P impurities gradually go to Al in the mixed gas of nitrogen and oxygen 0.10 Ga 0.90 The defined region of the As single wafer diffuses. The flow rate of the gas is 1L/h, the time is at least 1h, and n is finally formed + -Al 0.10 Ga 0.90 As。n + After the doping is finished, naturally cooling the temperature in the quartz furnace to room temperature, and carrying out Al on the base station 0.10 Ga 0.90 Taking out the As single crystal wafer to be reserved for standby;
step 3: and (3) preparing an antireflection film. At p respectively + -Al 0.10 Ga 0.90 As and n + -Al 0.10 Ga 0.90 Depositing and growing a layer of silicon nitride film on the As surface by utilizing a Plasma Enhanced Chemical Vapor Deposition (PECVD) method, wherein the deposition temperature is 500 ℃, and the deposition thickness is 10nm;
step 4: and (3) preparing a transparent conductive film. Magnetron sputtering a transparent conductive film on the antireflection film, wherein the deposited material is Indium Tin Oxide (ITO) with the thickness of 10nm;
step 5: preparation of the electrode. When the transparent conductive film is deposited, preparing electrodes on the upper surface and the lower surface, wherein the electrode materials are Ti/Al/Ti/Au, and the thicknesses of the electrodes are 100nm,40nm,100nm and 20nm respectively;
step 6: coating of polyester material. And coating a layer of polyester material on the upper and lower surfaces of the thin film solar cell, wherein the polyester material is fluorine-containing acrylic resin and can be cured by heating, and the coating thickness is 1 mu m. And finally forming the flexible thin film solar cell.
Example 2
Step 1: n-type Al 0.20 Ga 0.80 Preparation of As single crystal wafer. Firstly, taking a piece of n-type Al prepared by a pulling method 0.20 Ga 0.80 As single crystal rod. The single crystal rod was then cut into single crystal pieces having a thickness of 20 μm by a thin Jin Gangsi. After cutting, al is added 0.20 Ga 0.80 The As single crystal plate is adhered to the Si supporting substrate with an adhesive. N-type Al using Chemical Mechanical Polishing (CMP) 0.20 Ga 0.80 The As single crystal wafer was thinned to a thickness of 1 μm. After thinning, washing with acetone or alcohol to obtain Al 0.20 Ga 0.80 The As single crystal wafer is taken off from the supporting substrate;
step 2: al (Al) 0.20 Ga 0.80 Doping of As single crystal wafers. For cut Al 0.20 Ga 0.80 As single crystal waferDoping Al 0.20 Ga 0.80 The As single wafer is placed on the base of the ion implanter. For Al 0.20 Ga 0.80 The As single crystal wafer is implanted with boron ions, and the implantation concentration is 1 multiplied by 10 20 /cm 3 The implantation depth is 500nm, finally forming p + -Al 0.20 Ga 0.80 As. When p is + After doping is finished, al on the table top of the ion implanter 0.20 Ga 0.80 Turning the As single crystal wafer to the other side to prepare n + And (5) doping. For Al 0.20 Ga 0.80 As single crystal wafer is used for injecting arsenic or phosphorus ions with the injection concentration of 1 multiplied by 10 20 /cm 3 The implantation depth is 500nm, finally n is formed + -Al 0.20 Ga 0.80 As。n + After the doping is finished, naturally cooling the temperature in the quartz furnace to room temperature, and carrying out Al on the base station 0.20 Ga 0.80 Taking out the As single crystal wafer to be reserved for standby;
step 3: and (3) preparing an antireflection film. At p respectively + -Al 0.20 Ga 0.80 As and n + -Al 0.20 Ga 0.80 Depositing and growing a layer of silicon nitride film on the As surface by utilizing a Plasma Enhanced Chemical Vapor Deposition (PECVD) method, wherein the deposition temperature is 500 ℃, and the deposition thickness is 20nm;
step 4: and (3) preparing a transparent conductive film. Magnetron sputtering a transparent conductive film on the antireflection film, wherein the deposited material is Indium Tin Oxide (ITO) with the thickness of 20nm;
step 5: preparation of the electrode. When the transparent conductive film is deposited, preparing electrodes on the upper surface and the lower surface, wherein the electrode materials are Ti/Al/Ti/Au, and the thicknesses of the electrodes are 100nm,40nm,100nm and 20nm respectively;
step 6: coating of polyester material. And coating a layer of polyester material on the upper and lower surfaces of the thin film solar cell, wherein the polyester material is polyvinylidene fluoride material which can be heated and cured, and the coating thickness is 2 mu m. And finally forming the flexible thin film solar cell.
Example 3
Step 1: n-type Al 0.30 Ga 0.70 Preparation of As single crystal wafer. Firstly, taking a block by a pulling methodPrepared n-type Al 0.30 Ga 0.70 As single crystal rod. The single crystal bar was then cut into single crystal wafers with a thickness of 15 μm using a thin Jin Gangsi. After cutting, al is added 0.30 Ga 0.70 The As single crystal plate is adhered to the Si supporting substrate with an adhesive. N-type Al using Chemical Mechanical Polishing (CMP) 0.30 Ga 0.70 The As single crystal wafer was thinned to a thickness of 1 μm. After thinning, washing with acetone or alcohol to obtain Al 0.30 Ga 0.70 The As single crystal wafer is taken off from the supporting substrate;
step 2: al (Al) 0.30 Ga 0.70 Doping of As single crystal wafers. For cut Al 0.30 Ga 0.70 Doping the As single crystal wafer to obtain Al 0.30 Ga 0.70 The As single wafer is placed on the base of the ion implanter. For Al 0.30 Ga 0.70 The As single crystal wafer is implanted with boron ions, and the implantation concentration is 5 multiplied by 10 20 /cm 3 The implantation depth is 400nm, finally forming p + -Al 0.30 Ga 0.70 As. When p is + After doping is finished, al on the table top of the ion implanter 0.30 Ga 0.70 Turning the As single crystal wafer to the other side to prepare n + And (5) doping. For Al 0.30 Ga 0.70 As single crystal wafer is used for injecting arsenic or phosphorus ions with the injection concentration of 5 multiplied by 10 20 /cm 3 The implantation depth is 400nm, finally n is formed + -Al 0.30 Ga 0.70 As。n + After the doping is finished, naturally cooling the temperature in the quartz furnace to room temperature, and carrying out Al on the base station 0.30 Ga 0.70 Taking out the As single crystal wafer to be reserved for standby;
step 3: and (3) preparing an antireflection film. At p respectively + -Al 0.30 Ga 0.70 As and n + -Al 0.30 Ga 0.70 Depositing and growing a layer of silicon nitride film on the As surface by utilizing a laser pulse deposition method (PLD), wherein the deposition temperature is 500 ℃, and the deposition thickness is 20nm;
step 4: and (3) preparing a transparent conductive film. Magnetron sputtering a transparent conductive film on the antireflection film, wherein the deposited material is Indium Tin Oxide (ITO) with the thickness of 20nm;
step 5: preparation of the electrode. When the transparent conductive film is deposited, preparing electrodes on the upper surface and the lower surface, wherein the electrode materials are Ti/Al/Ti/Au, and the thicknesses of the electrodes are 100nm,40nm,100nm and 20nm respectively;
step 6: coating of polyester material. And coating a layer of polyester material on the upper and lower surfaces of the thin film solar cell, wherein the polyester material is polyvinylidene fluoride material which can be heated and cured, and the coating thickness is 2 mu m. And finally forming the flexible thin film solar cell.
The invention has the advantages that:
the invention mainly uses Al x Ga 1-x As single crystal wafers are doped to form PN junctions to prepare the flexible thin film solar cell, the preparation process of the flexible thin film solar cell is simple, the light absorption efficiency is high, a thick silicon substrate is not needed, and the material cost is effectively reduced; in addition, the thin film solar cell can change the forbidden bandwidth by changing the Al component, and can absorb light with different wavelengths. Meanwhile, the surface of the flexible thin film solar cell is coated with a layer of polyester material, so that the inner cell chip can be protected from being corroded by strong acid and strong alkali, and the service life of the solar cell can be prolonged; finally, the flexible thin film solar cell with the polyester material substrate is suitable for places with severe environments such as buildings, can be prepared into components with different light transmittance according to requirements, can replace glass curtain walls, and greatly increases the application field.
The above is only a preferred embodiment of the present invention, and is not intended to limit the present invention, but various modifications and variations can be made to the present invention by those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (6)
1. A flexible thin film solar cell, comprising: n-Al x Ga 1-x As single crystal wafer, said n-Al x Ga 1-x X is more than 0 and less than 0.8 in the As single crystal wafer;
the n-Al x Ga 1-x Upper and lower surface doping profile of As single crystal waferP is formed + -Al x Ga 1-x As layer and n + -Al x Ga 1-x An As layer, p + -Al x Ga 1-x An antireflection film, a transparent conductive film and a front electrode are sequentially formed on the As layer, the n is that + -Al x Ga 1-x An antireflection film, a transparent conductive film and a back electrode are sequentially formed on the As layer, and polyester materials are respectively coated on the front electrode and the back electrode;
the n-Al x Ga 1-x Doping the upper and lower surfaces of As single crystal wafer to form p + -Al x Ga 1-x As layer and n + -Al x Ga 1-x An As layer comprising: for cut Al x Ga 1-x Doping the As single crystal wafer to obtain Al x Ga 1-x The As single crystal wafer is placed on a base station in the quartz furnace tube; then the temperature in the furnace tube is increased to 800-1200 ℃, and then BBr is carried in the furnace 3 The impurity B gradually goes to Al x Ga 1-x Diffusing in a determined area of the surface of the As single crystal wafer; the flow rate of the gas is 0.1-6L/h, the time is at least 1h, and finally p is formed + -Al x Ga 1-x As; when p is + After the doping is finished, the temperature in the quartz furnace tube is reduced to room temperature, and Al on a base table in the furnace tube is reduced x Ga 1-x Turning the As single crystal wafer to the other side to prepare n + Doping; at this time, the temperature in the furnace tube is raised again to 800-1200 ℃, and at this time, asH is carried in the quartz furnace 3 Or pH of 3 As or P impurities gradually go to Al in the mixed gas of nitrogen and oxygen x Ga 1-x Diffusing a determined area of the As single crystal wafer; the flow rate of the gas is 0.1-6L/h, the time is at least 1h, and finally n is formed + -Al x Ga 1-x As；n + After the doping is finished, naturally cooling the temperature in the quartz furnace to room temperature, and carrying out Al on the base station x Ga 1-x The As single crystal wafer is removed to be left for use.
2. The flexible thin film solar cell of claim 1, wherein the polyester material comprises one of a polymer compound, a silicone rubber, a hard resin, and a fluoroplastic.
3. A method of manufacturing a flexible thin film solar cell as claimed in claim 1 or 2, comprising:
for n-Al x Ga 1-x P-carrying out on the upper surface of As single-chip + Doping of the type to form p + -Al x Ga 1-x An As layer;
for n-Al x Ga 1-x Under surface of As single crystal wafer n + Doping of the type to form n + -Al x Ga 1-x An As layer;
at said p + -Al x Ga 1-x An antireflection film, a transparent conductive film and a front electrode are sequentially prepared on the As layer;
at said n + -Al x Ga 1-x An antireflection film, a transparent conductive film and a back electrode are sequentially formed on the As layer;
and respectively coating polyester materials on the front electrode and the back electrode.
4. The method of claim 3, wherein p is + -Al x Ga 1-x The doping concentration of the As layer is 1×10 18 /cm 3 ～1×10 21 /cm 3 The doping thickness is 0.1 μm to 5 μm.
5. The method of claim 3, wherein n + -Al x Ga 1-x The doping concentration of the As layer is 1×10 18 /cm 3 ～1×10 21 /cm 3 The doping thickness is 0.1 μm to 5 μm.
6. The method of claim 3, wherein the n-Al is x Ga 1-x The doping of the As single crystal wafer adopts thermal diffusion or ion implantation.
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62171167A (en) * | 1986-01-23 | 1987-07-28 | Mitsubishi Electric Corp | Manufacture of solar cell |
| WO1999052155A1 (en) * | 1998-04-03 | 1999-10-14 | Picogiga, Societe Anonyme | Semiconductor structure having photovoltaic component |
| CN103035766A (en) * | 2012-12-12 | 2013-04-10 | 保定天威薄膜光伏有限公司 | Acid corrosion resistance thin-film solar battery component |
| CN205231075U (en) * | 2015-11-29 | 2016-05-11 | 湖北华昶能源科技有限公司 | Use solar cell of polymer membrane as protective layer |
| CN108666391A (en) * | 2017-04-01 | 2018-10-16 | 北京创昱科技有限公司 | A kind of production method and its battery component of binode Thinfilm solar cell assembly |
| CN109988466A (en) * | 2017-11-24 | 2019-07-09 | 大金氟化工（中国）有限公司 | Composition, coating, film, solar cell module back veneer and solar cell module |
-
2021
- 2021-10-18 CN CN202111210128.7A patent/CN113948598B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62171167A (en) * | 1986-01-23 | 1987-07-28 | Mitsubishi Electric Corp | Manufacture of solar cell |
| WO1999052155A1 (en) * | 1998-04-03 | 1999-10-14 | Picogiga, Societe Anonyme | Semiconductor structure having photovoltaic component |
| CN103035766A (en) * | 2012-12-12 | 2013-04-10 | 保定天威薄膜光伏有限公司 | Acid corrosion resistance thin-film solar battery component |
| CN205231075U (en) * | 2015-11-29 | 2016-05-11 | 湖北华昶能源科技有限公司 | Use solar cell of polymer membrane as protective layer |
| CN108666391A (en) * | 2017-04-01 | 2018-10-16 | 北京创昱科技有限公司 | A kind of production method and its battery component of binode Thinfilm solar cell assembly |
| CN109988466A (en) * | 2017-11-24 | 2019-07-09 | 大金氟化工（中国）有限公司 | Composition, coating, film, solar cell module back veneer and solar cell module |
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