CN113945599B - Method for removing charge effect of non-conductive sample in scanning electron microscope - Google Patents
Method for removing charge effect of non-conductive sample in scanning electron microscope Download PDFInfo
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- CN113945599B CN113945599B CN202111214492.0A CN202111214492A CN113945599B CN 113945599 B CN113945599 B CN 113945599B CN 202111214492 A CN202111214492 A CN 202111214492A CN 113945599 B CN113945599 B CN 113945599B
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- 230000000694 effects Effects 0.000 title claims abstract description 29
- 238000000034 method Methods 0.000 title claims abstract description 14
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 78
- 229910052751 metal Inorganic materials 0.000 claims description 77
- 239000002184 metal Substances 0.000 claims description 77
- 239000000919 ceramic Substances 0.000 claims description 37
- 239000002784 hot electron Substances 0.000 claims description 14
- 230000005684 electric field Effects 0.000 claims description 13
- 229910052721 tungsten Inorganic materials 0.000 claims description 12
- 239000010937 tungsten Substances 0.000 claims description 12
- 230000001105 regulatory effect Effects 0.000 claims description 11
- 239000000498 cooling water Substances 0.000 claims description 10
- 238000010438 heat treatment Methods 0.000 claims description 6
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- 239000011733 molybdenum Substances 0.000 claims description 4
- 238000001816 cooling Methods 0.000 claims description 3
- 230000007547 defect Effects 0.000 claims description 3
- 238000001000 micrograph Methods 0.000 claims description 3
- 238000000576 coating method Methods 0.000 abstract description 9
- 238000003384 imaging method Methods 0.000 abstract description 6
- 239000011248 coating agent Substances 0.000 abstract description 4
- 239000000523 sample Substances 0.000 description 67
- 230000002159 abnormal effect Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 239000012472 biological sample Substances 0.000 description 3
- 239000007888 film coating Substances 0.000 description 3
- 238000009501 film coating Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000005574 cross-species transmission Effects 0.000 description 2
- 230000005686 electrostatic field Effects 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 241001085205 Prenanthella exigua Species 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000004626 scanning electron microscopy Methods 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
- G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
- G01N23/2251—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion using incident electron beams, e.g. scanning electron microscopy [SEM]
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- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
Abstract
A method for removing the charge effect of a non-conductive sample in a scanning electron microscope relates to the field of scanning electron microscopes. In order to see the real appearance of an insulating sample without generating a charging effect under the condition of no coating, the patent provides a method for eliminating a non-conductive sample observed under a scanning electron microscope and a device for observing the non-conductive sample under the scanning electron microscope. The method can effectively eliminate the charge effect of part of the sample surface, and achieve the purpose of clear imaging. The invention not only omits a complex coating process, but also can clearly reflect the appearance of the insulating sample under a scanning electron microscope.
Description
Technical Field
The invention relates to the field of scanning electron microscopy.
Background
Scanning electron microscope is widely used in the technical fields of life science, physics, materials and the like, but because of the existence of charge effect, the scanning electron microscope is required to carry out film coating treatment on biological samples and non-conductive samples, so that the film coating process is tedious and time-consuming, and the film coating is very likely to change the surface of a sample wafer, so that the samples to be observed lose a certain degree of authenticity or partial imaging information of the samples is lost.
When a scanning electron microscope is used for observing a non-conductive sample or a sample with poor conductivity, high-energy electron beams bombard the surface of the sample, a large amount of electrons are injected into the sample, and as the sample is non-conductive, a large amount of electrons injected into the sample can reside on the surface of the sample and can not be conducted to the ground as much as the redundant free electrons of a metal sample with good grounding. Although there are many secondary electrons and backscattered electrons in the sample that spill over the sample surface, an unequal relationship is created in that the amount of electrons that reside is much higher than the amount of secondary electrons that spill over the sample surface, as compared to electrons that reside on the sample surface. The resident electrons form a pile-up on a part or the whole of the sample, and form electrostatic fields (negative fields) of unequal strength at the pile-up. The effect of the negative electric field influences the normal emission of secondary electrons at the position of the negative electric field, so that the phenomena of abnormal brightness, abnormal darkness and grinding of the surface topography of the sample can appear locally or completely, and the imaging quality is interfered. The electrostatic field formed by the accumulated electrons on the sample surface is called the "charge field". The phenomenon of local abnormal brightness, abnormal darkness and grinding of the scanning image formed under the interference of the charged field becomes a 'charged effect'.
In order to effectively eliminate the "charge effect", the morphology of the insulating sample or the biological sample is observed under the scanning electron microscope, and a coating method is adopted, namely, a layer of extremely thin metals such as gold, platinum and the like are coated on the insulating sample. However, the coating process is complex, and the metal film coated on the insulating sample changes the actual appearance of the sample, thereby sacrificing the imaging authenticity.
In order to see the real appearance of an insulating sample without generating a charging effect under the condition of no coating, the patent provides a method for eliminating a non-conductive sample observed under a scanning electron microscope and a device for observing the non-conductive sample under the scanning electron microscope. The method can effectively eliminate the charge effect of part of the sample surface, and achieve the purpose of clear imaging.
Disclosure of Invention
1. A method for removing the charge effect of a non-conductive sample in a scanning electron microscope is characterized by comprising the following steps:
step 1: placing an insulating sample in a metal shell with an upper opening, wherein a tungsten filament wound coil device is arranged in the metal shell for generating hot electrons; the positive electrode and the negative electrode of the tungsten wire are connected to the metal electrode of the heating power supply, so that the tungsten wire heats and overflows hot electrons under the action of a surrounding positive electric field; the metal shell is connected with a voltage-adjustable power supply anode to provide a positive bias voltage for the metal shell; by adjusting the bias power supply, the positive bias carried by the metal shell has an attraction effect on the charge accumulated on the surface of the insulating sample;
step 2: scanning the insulating sample by using a scanning electron microscope; until obvious charge phenomenon appears, namely, the naked eyes see the local or whole bright phenomenon of the sample image; the method comprises the steps of carrying out a first treatment on the surface of the
Step 3: a power supply direct current power supply is added to the tungsten wire, a bias voltage power supply is applied to the metal shell, the bias voltage power supply on the metal shell and the power supply direct current power supply of the tungsten wire are turned on, the voltage on the tungsten wire is regulated, the tungsten wire is heated to generate hot electrons, the bias voltage loaded on the metal shell is regulated, and the magnitude of the positive electric field with parameters is regulated; the electric charge accumulated on the surface of the insulating sample can be excited by electrons emitted from the tungsten wire, and the excited surface electric charge moves to the metal shell under the action of a positive electric field, so that the image defect caused by the charge effect is weakened or eliminated; the method comprises the steps of carrying out a first treatment on the surface of the
Step 4: and observing the change of the scanning image, and adjusting the temperature of the tungsten wire and the bias voltage on the metal shell until the brightness of the abnormally bright area on the scanning electron microscope image disappears.
2. The device for removing the charge effect of the non-conductive sample in the scanning electron microscope is characterized by comprising a metal shell (1), positive and negative electrodes (2), a cooling water pipeline (3), heat-insulating ceramics (4), tungsten wires (5) and a base (8);
the device is fixed on a sample stage of a scanning electron microscope by bolts through a base (8). The metal shell (1) is fixed in the middle of the base (8) and is connected with a positive bias power supply. At the midpoint of the metal housing (1) is a thermally insulating ceramic (4) which is fixed to a base (8). The outer side of the heat-insulating ceramic (4) is provided with a spiral tungsten wire (5); and a cooling water pipeline (3) is arranged on the metal shell (1) at the symmetrical side of the positive electrode and the negative electrode (2) and is used for cooling the whole device.
3. The device is characterized in that: the metal shell (1) is connected with a direct current positive bias voltage with adjustable 0-10kv through a wiring hole (7) and is used for attracting charges attached to a non-conductive sample.
4. The device is characterized in that: the heat-insulating ceramic (4) is cylindrical ceramic, and the upper surface of the heat-insulating ceramic (4) is flat and is used for placing a sample; and the upper surface of the heat insulating ceramic (4) is lower than the upper surface of the metal shell (1).
5. The device is characterized in that: the tungsten filament (5) is not contacted with the heat-insulating ceramic (4) and the upper surfaces of the tungsten filament and the heat-insulating ceramic are flush.
6. The device is characterized in that: a spiral molybdenum negative bias screw rod (6) is arranged outside the tungsten wire (5), and the negative bias screw rod (6) is fixed on the base (8) and is connected with a negative bias; the negative bias screw rod (6) can rebound part of hot electrons generated by heating the tungsten wire (5) to the sample, and the negative bias screw rod (6) can be spiral or cylindrical, and the upper surface of the negative bias screw rod is not higher than the upper surface of the tungsten wire (5).
7. The device is characterized in that: the cooling water pipeline (3) passes through the through hole on the upper side of the metal shell (1) from the outer side of the metal shell (1) to the inner side,
in order to effectively eliminate the 'charge effect', the morphology of an insulating sample or a biological sample is observed under a scanning electron microscope, a coating method is adopted, namely, a layer of very thin metals such as gold, platinum and the like are coated on the insulating sample, but the coating process is complex, and the metal film coated on the insulating sample changes the true morphology of the sample, so that the imaging authenticity is sacrificed. The patent provides a method for eliminating the charge effect of an insulating sample without coating the insulating sample. Not only omitting complex coating technique but also clearly reflecting the appearance of the insulating sample under the scanning electron microscope.
Drawings
FIG. 1 is a schematic diagram of the principle
FIG. 2 is one of the schematic diagrams of the apparatus
FIG. 3 is one of the schematic diagrams of the apparatus
Detailed Description
The schematic diagram is shown in fig. 1 below, in which: (9) The device is a metal shell, (10) is a sample surface charge, (11) is a sample, (12) is a tungsten wire, (13) is hot electrons generated by the tungsten wire, and (14) is a position for positively biasing the technical shell.
Step 1: the insulating sample is placed in an open top metal housing in which a tungsten filament wound coil arrangement is built for generating hot electrons. The positive and negative electrodes of the tungsten filament are connected to the metal electrode of the heating power supply, so that the tungsten filament heats and overflows hot electrons under the action of the surrounding positive electric field. The metal shell is connected with a voltage-adjustable power supply anode to provide a positive bias voltage for the metal shell. By adjusting the bias power supply, the positive bias carried by the metal housing has an attractive effect on the charge accumulated on the surface of the insulating sample.
Step 2: and (3) after the device and the sample in the step (1) are assembled, placing the assembled device and sample on a sample stage of a scanning electron microscope, and scanning the insulating sample by using the scanning electron microscope. Until a distinct charge phenomenon (abnormal brightness phenomenon of the sample image locally or wholly) appears.
Step 3: simultaneously, a power supply on the metal shell and a power supply of the tungsten wire (the power supply on the tungsten wire is not the same as the power supply for applying the bias voltage on the metal shell) are turned on, and the voltage connected to the heated tungsten wire is regulated, so that the tungsten wire is heated to generate hot electrons, the bias voltage loaded on the metal shell is regulated, and the magnitude of the positive electric field with parameters is regulated. (the charges accumulated on the surface of the insulator to be observed can be excited by electrons emitted from the tungsten wire, and the excited surface charges move towards the metal shell under the action of a positive electric field, so that image defects caused by a charging effect are reduced or eliminated).
Step 4: and observing the change of the scanning image, and adjusting the temperature of the tungsten wire and the bias voltage on the metal shell until the brightness of the abnormally bright area on the scanning electron microscope image is weakened or vanished. (the metal shell with positive bias has attraction effect on negative charge of the insulating sample surface, and the thermoelectrons emitted by the tungsten wire have excitation effect on accumulated negative electrons of the sample surface after wrapping the insulating sample surface, and the charge of the sample surface moves towards the metal shell with positive high voltage together with the thermoelectrons emitted by the tungsten wire so as to eliminate the charging effect of the sample surface).
The device comprises a metal shell (1), positive and negative electrodes (2), a cooling water pipeline (3), heat-insulating ceramics (4), tungsten wires (5), a negative bias screw rod (6), a wiring hole (7) and a base (8); the device is fixed on a sample stage of a scanning electron microscope by bolts through a base (8). The metal shell (1) is fixed at the middle position of the base (8) and is fixed by bolts at four corners of the metal shell. A wiring hole (7) is formed at the position 10mm away from the base below the metal shell (1) and is used for connecting a forward bias power supply to the metal shell (1). At the midpoint of the metal housing (1) is a cylindrical insulating ceramic (4) which is fixed to a base (8). The outer side of the cylindrical heat-insulating ceramic (4) is provided with a spiral tungsten wire (5); the legs of the tungsten filament (5) are fixed in the grooves of the positive and negative copper electrodes (2). The positive electrode and the negative electrode (2) pass through a through hole (which is not contacted with the metal shell (1)) on the metal shell (1) and are fixed on the base (8) through screws and ceramics. The outside of the tungsten wire (5) is a molybdenum spiral negative bias screw rod (6), and the device can rebound part of hot electrons generated by heating the tungsten wire (5) to the sample, thereby being beneficial to the charged excitation of the surface of the sample. And a cooling water pipeline (3) is arranged at the inner side of the metal shell (1) at one symmetrical side of the positive electrode and the negative electrode (2) and is used for cooling the whole device.
The metal shell (1) is connected with a direct current positive bias voltage with adjustable 0-10kv through a wiring hole (7) and is used for attracting the charges attached to a non-conductive sample.
The heat insulation ceramic (4) is cylindrical ceramic with the diameter of 10mm, has good heat insulation effect and is fixed on the base (8); the upper surface of the heat insulating ceramic (4) is flat and is used for placing a sample. And the upper surface of the heat-insulating ceramic (4) is lower than the upper surface of the metal shell (1), which is beneficial to the metal shell to provide an electric field for the charge of the surface of the sample, so that the surface charge is attracted by the positive electric field of the metal shell.
The periphery of the heat-insulating ceramic (4) is provided with a tungsten wire (5), the tungsten wire (5) is in non-contact with the heat-insulating ceramic (4), and the upper surfaces of the tungsten wire and the heat-insulating ceramic are flush. The tungsten wire (5) is of a spiral structure, the whole tungsten wire is cylindrical, and the diameter of the cylindrical tungsten wire (5) is 12mm, so that the tungsten wire is ensured to be in non-contact with the heat-insulating ceramic (4).
The negative bias screw rod (6) is made of molybdenum, the outer side of the tungsten wire (5) is spiral, and the negative bias screw rod (6) is fixed on the base (8) and is connected with 100v negative bias. The negative bias screw rod (6) can be spiral or cylindrical, and the upper surface of the negative bias screw rod is not higher than the upper surface of the tungsten wire (5).
The cooling water pipeline (3) is fixed on the base (8), and the upper part of the cooling water pipeline passes through a through hole on the upper side of the metal shell (1) and penetrates from the outer side to the inner side of the shell (1).
(1) The device is placed on a sample stage of a scanning electron microscope and the sample to be observed is placed on a thermally insulating ceramic (4) in the middle of a metal housing (1). Scanning the sample with a scanning electron microscope.
(2) The metal shell (1) is connected with a positive bias power supply with adjustable voltage to provide voltage for charges generated by a charging effect. The tungsten filament (5) is connected with the positive electrode and the negative electrode (2) and is connected with a direct current power supply with adjustable voltage, and the negative bias screw rod (6) is connected with a negative bias power supply. (the dc power supply is independent of the bias power supply and two different power supplies, the device requires three independent power supplies).
(3) When the phenomenon of charge effect (bright white area appears in a scanned image) appears on the surface of a sample, a direct current is started to supply power to a tungsten wire, and a bias power supply is started to provide positive bias for the metal shell (1).
(4) The bias power supply of the metal shell (1) is regulated, the positive voltage value of the metal shell (1) is increased, the tungsten wire power supply is regulated, the current in the tungsten wire is increased, and more hot electrons are released from the tungsten wire. The charged areas of the material surface are observed until the charged areas decrease to disappear.
Claims (6)
1. A method for removing the charge effect of a non-conductive sample in a scanning electron microscope is characterized by comprising the following steps:
step 1: placing a non-conductive sample in a metal shell with an upper opening, wherein a tungsten filament wound coil device is arranged in the metal shell for generating hot electrons; the positive electrode and the negative electrode of the tungsten wire are connected to the metal electrode of the heating power supply, so that the tungsten wire heats and overflows hot electrons under the action of a surrounding positive electric field; the metal shell is connected with a voltage-adjustable power supply anode to provide a positive bias voltage for the metal shell; by adjusting the bias power supply, the positive bias carried by the metal shell has an attraction effect on the charge accumulated on the surface of the non-conductive sample;
the middle of the metal shell (1) is provided with heat-insulating ceramic, and the upper surface of the heat-insulating ceramic (4) is flat and is used for placing a sample; the periphery of the heat-insulating ceramic (4) is provided with a spiral tungsten wire (5), the tungsten wire (5) is in non-contact with the heat-insulating ceramic (4), and the upper surfaces of the tungsten wire and the heat-insulating ceramic are flush;
step 2: scanning the non-conductive sample by using a scanning electron microscope; until obvious charge phenomenon appears, namely, the naked eyes see the local or whole bright phenomenon of the sample image;
step 3: a power supply direct current power supply is added to the tungsten wire, a bias voltage power supply is added to the metal shell, the bias voltage power supply on the metal shell and the power supply direct current power supply of the tungsten wire are turned on, the voltage on the tungsten wire is regulated, the tungsten wire is heated to generate hot electrons, the bias voltage loaded on the metal shell is regulated, and the magnitude of a positive electric field is regulated; the charges accumulated on the surface of the non-conductive sample can be excited by electrons emitted from the tungsten wire, and the excited surface charges move to the metal shell under the action of a positive electric field, so that image defects caused by a charging effect are weakened or eliminated; step 4: and observing the change of the scanning image, and adjusting the temperature of the tungsten wire and the bias voltage on the metal shell until the brightness of the abnormally bright area on the scanning electron microscope image disappears.
2. The device for removing the charge effect of the non-conductive sample in the scanning electron microscope is characterized by comprising a metal shell (1), positive and negative electrodes (2), a cooling water pipeline (3), heat-insulating ceramics (4), tungsten wires (5) and a base (8);
the device is fixed on a sample stage of a scanning electron microscope by bolts through a base (8); the metal shell (1) is fixed in the middle of the base (8), and the metal shell (1) is connected with a positive bias power supply; the central part of the metal shell (1) is provided with heat-insulating ceramic (4), the upper surface of the heat-insulating ceramic (4) is flat and is used for placing a sample, and the heat-insulating ceramic is fixed on a base (8); the outer side of the heat-insulating ceramic (4) is provided with a spiral tungsten wire (5), the tungsten wire (5) is in non-contact with the heat-insulating ceramic (4), and the upper surfaces of the tungsten wire and the heat-insulating ceramic are flush; connecting a tungsten wire (5) with the positive electrode and the negative electrode (2) and accessing a direct current power supply with adjustable voltage; and a cooling water pipeline (3) is arranged on the metal shell (1) at one symmetrical side of the positive electrode and the negative electrode (2) and is used for cooling the whole device.
3. The apparatus of claim 2, wherein: the metal shell (1) is connected with a direct current positive bias voltage with adjustable 0-10kv through a wiring hole (7) and is used for attracting charges attached to a non-conductive sample.
4. The apparatus of claim 2, wherein: the heat insulating ceramic (4) is cylindrical ceramic, and the upper surface of the heat insulating ceramic (4) is lower than the upper surface of the metal shell (1).
5. The apparatus of claim 2, wherein: a spiral molybdenum negative bias screw rod (6) is arranged outside the tungsten wire (5), and the negative bias screw rod (6) is fixed on the base (8) and is connected with a negative bias; the negative bias screw rod (6) bounces part of hot electrons generated by heating the tungsten wire (5) to the sample, and the negative bias screw rod (6) is spiral or cylindrical, and the upper surface of the negative bias screw rod is not higher than the upper surface of the tungsten wire (5).
6. The apparatus of claim 2, wherein: the cooling water pipeline (3) passes through a through hole on the upper side of the metal shell (1) and penetrates from the outer side to the inner side of the metal shell (1).
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| CN104126217A (en) * | 2012-03-01 | 2014-10-29 | 株式会社日立高新技术 | Charged particle beam device |
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| CN209822591U (en) * | 2019-04-17 | 2019-12-20 | 天津华慧芯科技集团有限公司 | Scanning electron microscope sample stage for non-conductive block sample |
| CN113109375A (en) * | 2021-03-16 | 2021-07-13 | 合肥波林新材料股份有限公司 | Thin-film material scanning electron microscope cross section sample preparation clamp and sample preparation method thereof |
| CN214012895U (en) * | 2020-12-23 | 2021-08-20 | 长沙元戎科技有限责任公司 | Novel ion source neutralizer |
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2021
- 2021-10-19 CN CN202111214492.0A patent/CN113945599B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104126217A (en) * | 2012-03-01 | 2014-10-29 | 株式会社日立高新技术 | Charged particle beam device |
| CN206193030U (en) * | 2016-10-11 | 2017-05-24 | 苏州阿特斯阳光电力科技有限公司 | Carry on one's shoulder or back electric guiding piece and be used for electron microscope's test platform |
| CN208738175U (en) * | 2018-10-18 | 2019-04-12 | 哈尔滨理工大学 | A kind of sample platform of scanning electronic microscope for being used to observe plastic sample with the charged phenomenon of inhibition |
| CN209822591U (en) * | 2019-04-17 | 2019-12-20 | 天津华慧芯科技集团有限公司 | Scanning electron microscope sample stage for non-conductive block sample |
| CN214012895U (en) * | 2020-12-23 | 2021-08-20 | 长沙元戎科技有限责任公司 | Novel ion source neutralizer |
| CN113109375A (en) * | 2021-03-16 | 2021-07-13 | 合肥波林新材料股份有限公司 | Thin-film material scanning electron microscope cross section sample preparation clamp and sample preparation method thereof |
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| CN113945599A (en) | 2022-01-18 |
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