CN113937444B - Compensation method for micro-coaxial process error and micro-coaxial - Google Patents
Compensation method for micro-coaxial process error and micro-coaxial Download PDFInfo
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- CN113937444B CN113937444B CN202111198575.5A CN202111198575A CN113937444B CN 113937444 B CN113937444 B CN 113937444B CN 202111198575 A CN202111198575 A CN 202111198575A CN 113937444 B CN113937444 B CN 113937444B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P3/00—Waveguides; Transmission lines of the waveguide type
- H01P3/02—Waveguides; Transmission lines of the waveguide type with two longitudinal conductors
- H01P3/06—Coaxial lines
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P11/00—Apparatus or processes specially adapted for manufacturing waveguides or resonators, lines, or other devices of the waveguide type
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Abstract
The invention discloses a compensation method of micro-coaxial process errors and micro-coaxial, wherein the compensation method comprises the following steps: obtaining the distribution of characteristic impedance errors of the micro-coaxial line on the wafer according to the micro-coaxial line distributed on the wafer, wherein the characteristic impedance error is the difference value of the actual characteristic impedance of the micro-coaxial line and the set characteristic impedance; and adjusting the micro-coaxial structure according to the distribution of the characteristic impedance error so as to compensate the characteristic impedance error. The compensation method of the invention can accurately compensate the characteristic impedance error by obtaining the distribution of the characteristic impedance error of the micro-coaxial on the wafer and adjusting the structure of the micro-coaxial in a targeted way, thereby reducing the influence on the transmission line performance caused by the process error of the micro-coaxial.
Description
Technical Field
The application relates to the technical field of radio frequency transmission, in particular to a micro-coaxial process error compensation method and micro-coaxial.
Background
The rectangular Micro-coaxial transmission technology is a radio frequency transmission technology based on MEMS (Micro-Electro-Mechanical Systems) Micro-machining process, and has the characteristics of ultra wide band, no dispersion, low loss, high power capacity, high isolation and the like due to the unique electromagnetic wave structure. The cross-sectional structure of the ideal design of the micro-coaxial cable is that the outer conductor and the inner conductor are mutually symmetrical rectangles. Due to process errors, the actually realized cross-sectional shape may be an irregular shape including a trapezoid or the like shown in fig. 1, causing the characteristic impedance of the microcoaxial to deviate from the design value. For example, the characteristic impedance deviates from the design value of 50 Ω, the transmission performance including S21 (forward transmission coefficient) is impaired. For example, a nominal micro-coaxial loss of 0.2db per 1 cm is designed to cause a 4% deviation in characteristic impedance due to 2 degrees of angular error of either φ 1 or φ 2 as shown in FIG. 1, doubling the loss to 0.4db.
Therefore, how to compensate the micro-coaxial machining process error is a technical problem to be solved urgently at present.
Disclosure of Invention
The invention relates to a micro-coaxial process error compensation method and micro-coaxial to compensate micro-coaxial processing process errors.
The embodiment of the invention provides the following scheme:
in a first aspect, an embodiment of the present invention provides a method for compensating a micro-coaxial process error, including:
obtaining the distribution of characteristic impedance errors of the micro-coaxial line on the wafer according to the micro-coaxial line distributed on the wafer, wherein the characteristic impedance error is the difference value of the actual characteristic impedance of the micro-coaxial line and the set characteristic impedance;
and adjusting the micro-coaxial structure according to the distribution of the characteristic impedance error so as to compensate the characteristic impedance error.
In an optional embodiment, the obtaining the distribution of the characteristic impedance error of the micro-coaxial line on the wafer according to the micro-coaxial line distributed on the wafer includes:
obtaining the wafer prepared according to a preset standard;
measuring the characteristic impedance of micro-coaxial lines distributed on the wafer to obtain the actual characteristic impedance;
obtaining the distribution of the characteristic impedance error according to the actual characteristic impedance and the set characteristic impedance; wherein the set characteristic impedance is a set value of the micro coaxial characteristic impedance in the preset standard.
In an alternative embodiment, the obtaining the actual characteristic impedance according to the measured value of the micro-coaxial characteristic impedance includes:
acquiring the current distribution state of the micro-coaxial shaft on the wafer;
and selecting to measure the characteristic impedance of the micro-coaxial one by one or in a distributed manner according to the current distribution state so as to obtain the actual characteristic impedance.
In an optional embodiment, the micro-coaxial cable includes an inner conductor and an outer conductor, the inner conductor is suspended in a cavity of the outer conductor, and the adjusting the structure of the micro-coaxial cable to compensate the characteristic impedance error according to the distribution of the characteristic impedance error includes:
and adjusting the centering deviation of the inner conductor at the outer conductor when the distributed characteristic impedance error is larger than a first impedance threshold value.
In an optional embodiment, the micro-coaxial line includes an inner conductor and an outer conductor, the inner conductor is suspended in a cavity of the outer conductor, and the micro-coaxial line is adjusted to compensate the characteristic impedance error according to the distribution of the characteristic impedance error, and further includes:
and when the distributed characteristic impedance error is larger than a second impedance threshold value, increasing and adjusting the width of the inner conductor.
In an optional embodiment, a plurality of release holes are provided at intervals on the top layer of the outer conductor of the micro-coaxial, and the structure of the micro-coaxial is adjusted to compensate the characteristic impedance error according to the distribution of the characteristic impedance error, further including:
reducing a surface area of the release hole to a surface area of the top layer when the characteristic impedance error according to distribution is not greater than a third impedance threshold.
In an alternative embodiment, the release holes are rectangular orthogonal to the top layer of the outer conductor, the reducing the ratio of the surface area of the release holes to the surface area of the top layer comprising:
and adjusting the length increase of the side of the release hole parallel to the length direction of the micro coaxial shaft.
In an alternative embodiment, the release holes are rectangular in shape orthogonal to the top layer of the outer conductor, the reducing the ratio of the surface area of the release holes to the surface area of the top layer, further comprising:
the hole pitch of the release holes is adjusted to be decreased, and the number of the release holes is increased.
In an alternative embodiment, the surface area of the release holes is adjusted to the surface area of the top layer by no more than 16.5%.
In a second aspect, embodiments of the present invention further provide a micro-coaxial cable treated by the method of any one of the first aspect.
Compared with the prior art, the micro-coaxial process error compensation method and the micro-coaxial process error compensation method provided by the invention have the following advantages:
according to the invention, the distribution of the micro-coaxial characteristic impedance errors is obtained on the wafer, the micro-coaxial structure is adjusted in a targeted manner, and the characteristic impedance errors can be accurately compensated, so that the influence on the transmission line performance caused by the micro-coaxial process errors is reduced.
Drawings
In order to more clearly illustrate the embodiments of the present specification or the technical solutions in the prior art, the drawings required to be used in the embodiments will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present specification, and it is obvious for those skilled in the art to obtain other drawings without creative efforts.
FIG. 1 is a schematic cross-sectional view of a microcoaxial with process tolerance;
fig. 2 is a flowchart of a method for compensating for micro-coaxial process errors according to an embodiment of the present invention;
FIG. 3 is a schematic structural diagram of a micro-coaxial cross-section without process errors according to an embodiment of the present invention;
FIG. 4 is a graph of adjustment reduction versus return loss for different releases Kong Zhanbi provided by an embodiment of the present invention;
FIG. 5 is a graph of insertion loss versus adjustment reduction for different releases Kong Zhanbi provided by an embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, rather than all embodiments, and all other embodiments obtained by those skilled in the art based on the embodiments of the present invention belong to the scope of protection of the embodiments of the present invention.
Referring to fig. 2, fig. 2 is a flowchart of a method for compensating for micro-coaxial process errors according to an embodiment of the present invention, including:
s11, obtaining the distribution of characteristic impedance errors of the micro-coaxial line on the wafer according to the micro-coaxial line distributed on the wafer, wherein the characteristic impedance error is the difference value between the actual characteristic impedance of the micro-coaxial line and the set characteristic impedance.
Specifically, the characteristic impedance is an inherent characteristic of the radio frequency transmission line which affects the amplitude and phase changes of the radio wave voltage and current, and is equal to the ratio of the voltage to the current at each place, and in a radio frequency circuit, a resistor, a capacitor and an inductor can block the flow of the current. And after the preparation is finished, scribing the wafer, and packaging the chip to obtain the radio frequency chip containing the micro-coaxial.
Actually measuring the characteristic impedance of the micro-coaxial line to obtain the actual characteristic impedance of the micro-coaxial line; when the characteristic impedance is set for designing a chip, the set value of the micro coaxial characteristic impedance in the standard is preset, the difference between the actual characteristic impedance and the set characteristic impedance is obtained, the characteristic impedance error corresponding to the micro coaxial can be obtained, and the distribution of the characteristic impedance error of the micro coaxial on the wafer can be known by knowing all the characteristic impedance errors on the wafer. It should be noted that, when chips are prepared from a wafer, the process error is distributed relatively stably on the wafer, and therefore, the characteristic impedance error is also distributed relatively stably on the wafer.
In an optional embodiment, the obtaining the distribution of the characteristic impedance error of the micro-coaxial line on the wafer according to the micro-coaxial line distributed on the wafer includes:
obtaining the wafer prepared according to a preset standard;
measuring the characteristic impedance of micro-coaxial lines distributed on the wafer to obtain the actual characteristic impedance;
obtaining the distribution of the characteristic impedance error according to the actual characteristic impedance and the set characteristic impedance; wherein the set characteristic impedance is a set value of the micro coaxial characteristic impedance in the preset standard.
The characteristic impedance measuring method can be used for testing the scattering parameters (or S parameters) of the micro-coaxial line through a vector network analyzer so as to represent the characteristic impedance of the micro-coaxial line; two-port calibration can be carried out on a vector network analyzer and a probe station by using SOLT, and then S11 (input reflection coefficient) and S22 (forward transmission coefficient) are respectively tested; and by the formula:
z0=50 × [1+ (S11)/1- (S11) ] estimates the characteristic impedance Z0 of the micro-axis, where 50 is an estimation coefficient.
In addition, a plurality of wafers prepared according to a preset standard, for example, 5 wafers, can be obtained, corresponding characteristic impedance error distributions are obtained respectively, and then an average value is obtained, so that the accuracy of obtaining the characteristic impedance error distributions can be improved.
In some specific implementations, the obtaining the actual characteristic impedance according to the measured value of the micro-coaxial characteristic impedance includes:
acquiring the current distribution state of the micro-coaxial shaft on the wafer;
and selecting to measure the characteristic impedance of the micro-coaxial one by one or in a distributed manner according to the current distribution state so as to obtain the actual characteristic impedance.
Specifically, the micro-coaxial is integrated inside the chip, and the preparation number of the chips on one wafer is determined according to the specification of the wafer and the area of the chips, so that the distribution state of the micro-coaxial on the wafer may be relatively dense and sparse. When the current distribution state is relatively dense, the characteristic impedance of the distributed measurement micro-coaxial can be selected, namely, the distribution selects part of the micro-coaxial for measurement. It can be understood that, part of the measurement can select micro-coaxial lines which are randomly and uniformly distributed on the wafer, and the average value is calculated after the measurement so as to obtain the actual characteristic impedance of the micro-coaxial lines; the distributed measurement can effectively reduce the measurement time and the measurement workload of the characteristic impedance. Of course, when the current distribution state is relatively sparse, the characteristic impedance of the micro-coaxial line can be measured one by one, and then the average value is calculated to obtain the actual characteristic impedance of the micro-coaxial line, and the actual characteristic impedance obtained by the method has higher precision. After the distribution of the characteristic impedance error of the micro-coaxial line on the wafer is obtained, the process proceeds to step S12.
And S12, adjusting the micro-coaxial structure according to the distribution of the characteristic impedance error to compensate the characteristic impedance error.
Specifically, the micro-coaxial structure is closely related to the characteristic impedance, so that the characteristic impedance error can be compensated by adjusting the micro-coaxial structure, and the micro-coaxial structure can be prepared by adjusting the micro-coaxial design structure to obtain the micro-coaxial structure meeting the design requirements. The ideal micro-coaxial cross-section structure is generally rectangular, but the structure is actually produced to be a non-rectangular structure, such as a trapezoidal irregular quadrilateral structure. Therefore, the dimension of the structure with deviation can be correspondingly modified during design, so that when the micro-coaxial is prepared again, an ideal rectangular structure can be obtained.
In some specific implementations, referring to fig. 3, the micro coaxial cable includes an inner conductor 2 and an outer conductor 1, the inner conductor 2 is suspended in a cavity of the outer conductor 1, and the adjusting the micro coaxial cable structure according to the distribution of the characteristic impedance error to compensate the characteristic impedance error includes:
and adjusting the centering deviation of the inner conductor at the outer conductor when the distributed characteristic impedance error is larger than a first impedance threshold value.
Specifically, the error of the characteristic impedance of the micro-coaxial line due to the MEMS manufacturing process can be summarized as the influence of the following three capacitance distributions:
1. the capacitance distribution between the inner conductor 2 and the top layer 3 conductor of the outer conductor 1.
2. The capacitance distribution between the inner conductor 2 and the bottom layer 4 conductor of the outer conductor 1.
3. The capacitance distribution between the inner conductor 2 and the side wall 5 of the outer conductor 1.
When inner conductor 2 was unsettled in the cavity of outer conductor in the middle, characteristic impedance was the minimum, and when the characteristic impedance error was greater than first impedance threshold value, positional deviation probably had appeared in outer conductor 1 and inner conductor 2, adjusts the deviation in the middle that the inner conductor is located the outer conductor, can effectively reduce little coaxial characteristic impedance.
Evaluating the characteristic impedance of the microcoaxial the relative position of the outer conductor 1 and the inner conductor 2 can be determined by evaluating the capacitance per unit length of the cross section of the microcoaxial. The capacitance per unit length C is calculated by equation 1-2.
The characteristic impedance Z0, L is inductance in unit length, C is capacitance in unit length, V is light velocity in free space, vm is light velocity in medium, and ε eff is equivalent dielectric constant of medium, so as to obtain capacitance in unit length, C, g1, w, g2, h1, b and h2 are obtained through formula 3, and corresponding adjustment is performed, it can be understood that one parameter of g1, w, g2, h1, b and h2 can be changed, other parameters are not changed so as to adjust characteristic impedance, and characteristic impedance can also be adjusted by correspondingly changing multiple parameters. As will be appreciated by those skilled in the art, equation 3 also characterizes the relationship between the capacitance per unit length C and the various parameters.
Furthermore, the centering deviation of the inner conductor on the outer conductor can be adjusted to effectively reduce the characteristic impedance of the micro-coaxial cable, but the mode can only be adjusted within a certain range, and the characteristic impedance of the micro-coaxial cable with a large characteristic impedance error needs to be further reduced.
In some implementations, the adjusting the micro-coaxial structure to compensate for the characteristic impedance error according to the distribution of the characteristic impedance error further includes:
and when the distributed characteristic impedance error is larger than a second impedance threshold value, increasing and adjusting the width of the inner conductor.
Specifically, the relationship between increasing the width of the inner conductor to reduce the characteristic impedance is: the characteristic impedance can be reduced by 4% by increasing the width by 10%, it should be noted that the proportional relationship is not a continuous linear relationship, the adjustment range of the width w of the inner conductor satisfies w >0.35 (w +2 g), g = max (g 1, g 2), and the characteristic impedance of the micro-axis can be correspondingly adjusted according to the width of the inner conductor. After the width of the inner conductor is increased, the cavity of the outer conductor may be correspondingly increased, and taking the characteristic impedance of the micro-coaxial line as 50 Ω as an example, after the width of the inner conductor and the distance from the outer conductor are increased, the corresponding change of the characteristic impedance is shown in table 1.
Table 1:
| inner conductor width (um) | Distance from outer conductor (um) | Characteristic impedance (50 omega) |
| 40 | 50 | 52 |
| 60 | 50 | 39 |
| 80 | 60 | 31 |
As can be seen from table 1, the characteristic impedance decreases from 50 Ω correspondingly when the width of the inner conductor and the distance from the outer conductor are increased.
Furthermore, the centering deviation of the inner conductor on the outer conductor is adjusted, the width of the inner conductor is increased and adjusted, the characteristic impedance of the micro-coaxial line can be effectively reduced, the mode is a coarse adjustment process, and the adjustment precision cannot be further improved, so another mode needs to be adopted for fine adjustment to improve the adjustment precision of the characteristic impedance error.
In some specific implementations, a plurality of release holes are provided at intervals on the top layer of the outer conductor of the micro-coaxial, and the adjusting the structure of the micro-coaxial to compensate the characteristic impedance error according to the distribution of the characteristic impedance error further includes:
reducing a surface area of the release hole to a surface area of the top layer when the characteristic impedance error according to distribution is not greater than a third impedance threshold.
Specifically, the space between the inner conductor and the outer conductor is a sacrificial layer, and the space structure of the sacrificial layer has capacitance, so that a release hole can be formed in the outer conductor to release the capacitance in the sacrificial layer, and the change of the capacitance will affect the characteristic impedance of the micro-coaxial line. The ratio of the surface area of the release holes to the surface area of the top layer is reduced, and the adjusted characteristic impedance ranges from 0 to 3 omega. Referring specifically to fig. 4, fig. 4 is a graph of the relationship between the adjustment reduction of the release Kong Zhanbi and the return loss according to the embodiments of the present invention, and it can be seen that the adjustment reduction of the ratio of the surface area of the release hole to the surface area of the top layer is 13.5% and 16.5%, and the return loss is correspondingly reduced.
It should be noted that the first impedance threshold, the second impedance threshold, and the third impedance threshold may be the same, and 3 Ω may be selected as the first impedance threshold, the second impedance threshold, and the third impedance threshold; of course, the method may also be different, and in actual application, a technician may select the method according to actual experience, or may determine the method through a test calibration test.
In some implementations, the release holes are rectangular orthogonal to the top layer of the outer conductor, the reducing a ratio of a surface area of the release holes to a surface area of the top layer, comprising:
and adjusting the length increase of the side of the release hole parallel to the length direction of the micro coaxial shaft.
Specifically, the length of the side of the release hole perpendicular to the length direction of the microcoaxial is required to be less than or equal to 1/3 of the width w of the inner conductor, the length of the side of the release hole parallel to the length direction of the microcoaxial can be calculated according to the ratio of the total area occupied by all the release holes to the total area of the top layer of the outer conductor, the length of the side of the release hole parallel to the microcoaxial is increased and adjusted, the surface area of the release hole is correspondingly increased, and the capacitance in the sacrificial layer can be released in a larger space to reduce the characteristic impedance of the microcoaxial.
In some implementations, the release holes are rectangular orthogonal to the top layer of the outer conductor, the reducing the ratio of the surface area of the release holes to the surface area of the top layer, further comprising:
the hole pitch of the release holes is adjusted to be decreased, and the number of the release holes is increased.
Specifically, decreasing the hole pitch of the release holes increases the number of release holes, as does the surface area of the release holes, to decrease the characteristic impedance of the microcoaxial. The length of the side of the micro-coaxial shaft in the length direction is increased and adjusted, or the hole distance of the release holes is reduced and the number of the release holes is increased, and technicians can select the release holes according to the MEMS manufacturing process.
In some implementations, the adjusted reduction in the surface area of the release holes to the surface area of the top layer is no greater than 16.5%.
Specifically, the influence of insertion loss and reflection loss on micro-coaxiality needs to be comprehensively considered on the surface area of the release hole, and the increase of the surface area of the release hole can correspondingly increase the insertion loss of the micro-coaxiality; therefore, it is considered that fig. 5 is a graph of the adjustment reduction of different releases Kong Zhanbi versus insertion loss, as shown in fig. 5. The adjustment reduction is not more than 16.5%, and the influence of insertion loss on the micro-coaxial transmission performance can be reduced while the characteristic impedance is adjusted.
Based on the same inventive concept as the compensation method of the micro-coaxial process error, the invention further provides a micro-coaxial which is processed by any one of the methods.
The technical scheme provided by the embodiment of the invention at least has the following technical effects or advantages:
1. the distribution of the micro-coaxial characteristic impedance errors is obtained on the wafer, the micro-coaxial structure is adjusted in a targeted mode, the characteristic impedance errors can be compensated accurately, and the influence on the transmission line performance caused by the micro-coaxial process errors is reduced.
2. Through coarse adjustment and fine adjustment of the micro-coaxial characteristic impedance, a micro-coaxial structure adjustment scheme can be accurately determined, and process error compensation is more accurate.
3. The error is accurately compensated after the actual characteristic impedance is measured, so that the micro-coaxial line meeting the requirement can be obtained, the production problem of the micro-coaxial line can be timely found and solved in the preparation process of the radio frequency chip, the loss caused by the fact that the micro-coaxial structure with poor quality flows into the next procedure is avoided, and the compensation method can be better applied to the trial production stage of the chip.
Since the electronic device described in this embodiment is an electronic device used for implementing the method for processing information in this embodiment, a person skilled in the art can understand the specific implementation manner of the electronic device of this embodiment and various variations thereof based on the method for processing information described in this embodiment, and therefore, how to implement the method in this embodiment by the electronic device is not described in detail here. Electronic devices used by those skilled in the art to implement the method for processing information in the embodiments of the present application are all within the scope of the present application.
Claims (9)
1. A method for compensating micro-coaxial process errors is applied to the micro-coaxial error compensation on a wafer and comprises the following steps:
obtaining the distribution of characteristic impedance errors of micro-coaxiality on a wafer according to the micro-coaxiality distributed on the wafer, wherein the characteristic impedance errors are the difference between the actual characteristic impedance of the micro-coaxiality and the set characteristic impedance;
adjusting the micro-coaxial structure to compensate the characteristic impedance error according to the distribution of the characteristic impedance error;
the obtaining of the distribution of the characteristic impedance error of the micro-coaxial line on the wafer according to the micro-coaxial line distributed on the wafer comprises:
obtaining the wafer prepared according to a preset standard;
measuring the characteristic impedance of micro-coaxial lines distributed on the wafer to obtain the actual characteristic impedance;
obtaining the distribution of the characteristic impedance error according to the actual characteristic impedance and the set characteristic impedance; wherein the set characteristic impedance is a set value of the micro coaxial characteristic impedance in the preset standard;
the measuring the characteristic impedance of the micro-coaxial line distributed on the wafer to obtain the actual characteristic impedance comprises the following steps:
obtaining the current distribution state of the micro-coaxial on the wafer;
and selecting to measure the characteristic impedance of the micro-coaxial one by one or in a distributed manner according to the current distribution state so as to obtain the actual characteristic impedance.
2. The method of claim 1, wherein the micro-coaxial cable comprises an inner conductor and an outer conductor, the inner conductor is suspended in a cavity of the outer conductor, and the adjusting the micro-coaxial structure to compensate the characteristic impedance error according to the distribution of the characteristic impedance error comprises:
and adjusting the centering deviation of the inner conductor at the outer conductor when the distributed characteristic impedance error is larger than a first impedance threshold value.
3. The method of claim 1, wherein the micro coaxial cable comprises an inner conductor and an outer conductor, the inner conductor is suspended in a cavity of the outer conductor, and the micro coaxial cable structure is adjusted to compensate the characteristic impedance error according to the distribution of the characteristic impedance error, and further comprising:
and when the distributed characteristic impedance error is larger than a second impedance threshold value, increasing and adjusting the width of the inner conductor.
4. The method for compensating for micro-coaxial process error according to claim 3, wherein when the width of the inner conductor is increased and adjusted, the adjustment range of the width w of the inner conductor satisfies the following formula: w >0.35 (w +2 g), g = max (g 1, g 2), where g1 is the inner cavity horizontal distance of the inner conductor from the outer conductor on one side and g2 is the inner cavity horizontal distance of the inner conductor from the outer conductor on the other side.
5. A method for compensating a process error of a micro-coaxial according to any one of claims 1 to 3, wherein a plurality of release holes are spaced on the top layer of the outer conductor of the micro-coaxial, and the structure of the micro-coaxial is adjusted to compensate the characteristic impedance error according to the distribution of the characteristic impedance error, further comprising:
reducing a surface area of the release hole to a surface area of the top layer when the characteristic impedance error according to distribution is not greater than a third impedance threshold.
6. The method of compensating for micro-coaxial process errors of claim 5, wherein the relief holes are rectangular orthogonal to the top layer of the outer conductor, the reducing a ratio of a surface area of the relief holes to a surface area of the top layer comprising:
and adjusting the length increase of the side of the release hole parallel to the length direction of the micro coaxial shaft.
7. The method of compensating for micro-coaxial process errors of claim 5, wherein the relief holes are rectangular orthogonal to the top layer of the outer conductor, the reducing a ratio of a surface area of the relief holes to a surface area of the top layer, further comprising:
and adjusting the hole spacing reduction of the release holes and increasing the number of the release holes.
8. The method of compensating for micro-coaxial process errors of claim 5, wherein the ratio of the surface area of the release holes to the surface area of the top layer is adjusted by no more than 16.5%.
9. A microcoaxial, characterized in that the microcoaxial is treated by the method of any one of claims 1 to 8.
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