CN112782486B - Multi-frequency-point dielectric constant measuring device based on stepped impedance resonance structure - Google Patents
Multi-frequency-point dielectric constant measuring device based on stepped impedance resonance structure Download PDFInfo
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- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R27/00—Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
- G01R27/02—Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
- G01R27/26—Measuring inductance or capacitance; Measuring quality factor, e.g. by using the resonance method; Measuring loss factor; Measuring dielectric constants ; Measuring impedance or related variables
- G01R27/2617—Measuring dielectric properties, e.g. constants
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R27/00—Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
- G01R27/02—Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
- G01R27/26—Measuring inductance or capacitance; Measuring quality factor, e.g. by using the resonance method; Measuring loss factor; Measuring dielectric constants ; Measuring impedance or related variables
- G01R27/2617—Measuring dielectric properties, e.g. constants
- G01R27/2623—Measuring-systems or electronic circuits
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Abstract
The invention relates to a multi-frequency-point dielectric constant measuring device based on a stepped impedance resonance structure, which comprises a first dielectric layer, a second dielectric layer and a third dielectric layer from top to bottom, wherein a first metal layer, a second metal layer and a third metal layer are etched on the lower surface of the first dielectric layer, a fourth metal layer is etched on the upper surface of the third dielectric layer, and a cavity filled with a material to be measured is arranged in the center of the second dielectric layer. The invention utilizes signal lines with different widths to form microstrip lines with different impedance sizes so as to form a stepped impedance resonance structure, the structure can generate a plurality of discrete resonance frequency points in a broadband, and the dielectric constant of a measured material in a cavity of a measured solid or liquid or solid powder can be deduced through electromagnetic parameters measured by a vector network analyzer and electromagnetic parameters simulated by electromagnetic simulation software HFSS, so that the multi-frequency-point dielectric constant measuring device based on the stepped impedance resonance structure is finally realized.
Description
Technical Field
The invention relates to a measuring device, in particular to a multi-frequency-point dielectric constant measuring device based on a stepped impedance resonance structure.
Background
The dielectric constant of a material is one of the most important properties in the design of microwave radio frequency devices. The dielectric constant of the material does not become constant with frequency changes, which can cause dispersion in the transmission line, resulting in pulse distortion in ultra-wideband systems. Therefore, the characteristics of the broadband dielectric constant material need to be well understood to allow precise design of microwave rf devices.
The dielectric constant measuring method of microwave frequency band material is mainly divided into resonance method and non-resonance method. In the non-resonant method, there is mainly a transmission-reflection technique. The non-resonant method for realizing broadband dielectric constant measurement is relatively easy to implement, however, the non-resonant method is influenced by calibration errors, irreproducibility caused by multiple measurements, mismatch of connectors and impedance and the like, so that the measurement result has larger errors.
A more accurate method of testing the dielectric constant of a material than a non-resonant method is the resonant method. The resonance method is to provide an accurate dielectric constant by full-wave analysis of electromagnetic field distribution using a special resonance structure, such as a resonant cavity, a dielectric resonance, and the like. However, most non-resonant methods for testing the dielectric constant of the material can only measure the dielectric constant value at a certain frequency point, and cannot obtain the dielectric constant change rule of the material in a wide frequency band. Therefore, the broadband dielectric constant measurement method is a very meaningful test method.
Disclosure of Invention
In order to solve the above problems, the present invention provides a multi-frequency-point dielectric constant measuring apparatus based on a stepped impedance resonance structure, which derives a node constant by generating a plurality of discrete resonance frequency points in a wide frequency band.
In order to achieve the purpose, the invention is realized by the following technical scheme:
the invention relates to a multi-frequency-point dielectric constant measuring device based on a stepped impedance resonance structure, which comprises a first dielectric layer, a second dielectric layer and a third dielectric layer from top to bottom, wherein a first metal layer, a second metal layer and a third metal layer are etched on the lower surface of the first dielectric layer, a fourth metal layer is etched on the upper surface of the third dielectric layer, and a cavity filled with a material to be measured is arranged in the center of the second dielectric layer.
The invention is further improved in that: the area size of the cavity surface is smaller than the area of the second metal layer.
The invention is further improved in that: the material to be detected in the cavity is solid or liquid or solid powder, such as Rogers plate, liquid crystal, ceramic powder and the like.
The invention is further improved in that: the first metal layer, the second metal layer and the third metal layer are conductor strips of microstrip lines with different impedances.
The invention is further improved in that: the first metal layer, the second metal layer, and the third metal layer have impedance values Z1, Z2, and Z3, respectively, and electrical lengths q1, q2, and q3, respectively, which must satisfy the formulas Z1/Z2= tan (q 1) · tan (q 2/2) and Z3/Z2= tan (q 3) · tan (q 2/2).
The invention is further improved in that: the ratio of the length of the microstrip line conductor strip corresponding to the second metal layer to the length of the microstrip line conductor strip corresponding to the first metal layer and the third metal layer is larger, the more resonance frequency points are generated, the more frequency points can be used for measuring the dielectric constant of the measured solid/liquid/solid powder, and the more abundant the result is.
The invention is further improved in that: the fourth metal layer is a grounding plate of the microstrip line.
The invention is further improved in that: the measuring device may be used to measure the dielectric constant of the dielectric anisotropic material at different bias voltages.
The invention is further improved in that: the measuring device can be used for measuring the dielectric constant of a plurality of frequency points of the measured material S within 0GHz-20 GHz.
The invention has the beneficial effects that: the invention utilizes signal lines with different widths to form microstrip lines with different impedance sizes so as to form a stepped impedance resonance structure, the structure can generate a plurality of discrete resonance frequency points in a broadband, and the dielectric constant of a measured material in a cavity of a measured solid or liquid or solid powder can be deduced through electromagnetic parameters measured by a vector network analyzer and electromagnetic parameters simulated by electromagnetic simulation software HFSS, so that the multi-frequency-point dielectric constant measuring device based on the stepped impedance resonance structure is finally realized.
The invention can measure the dielectric constant of solid, liquid or solid powder, measure the dielectric constant of a plurality of frequency points of a measured object in a wide frequency band, and measure the dielectric constant of a measured material under different voltages.
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FIG. 1 is a schematic diagram of the structure of the present invention after being disassembled.
Fig. 2 is a schematic view of the assembled structure of the present invention.
Detailed Description
In the following description, for purposes of explanation, numerous implementation details are set forth in order to provide a thorough understanding of the embodiments of the present invention. It should be understood, however, that these implementation details are not to be interpreted as limiting the invention. That is, in some embodiments of the invention, such implementation details are not necessary. In addition, some conventional structures and components are shown in simplified schematic form in the drawings.
As shown in fig. 1-2, the present invention is a multi-frequency-point dielectric constant measuring device based on a stepped impedance resonance structure, the measuring device includes a first dielectric layer D1, a second dielectric layer D2, and a third dielectric layer D3 from top to bottom, a first metal layer M1, a second metal layer M2, and a third metal layer M3 are etched on a lower surface of the first dielectric layer D1, a fourth metal layer M4 is etched on an upper surface of the third dielectric layer D3, the first metal layer M1, the second metal layer M2, and the third metal layer M3 are conductor strips of microstrip lines with different impedances, impedance values corresponding to the first metal layer M1, the second metal layer M2, and the third metal layer M3 are Z1, Z2, and Z3, electrical lengths are q1, q2, and q3, the microstrip line conductor strip structure has the advantages that the microstrip line conductor strip structure must satisfy the formulas Z1/Z2= tan (q 1) · (q 2/2) and Z3/Z2= tan (q 3) · (q 2/2), the ratio of the length of the microstrip line conductor strip corresponding to the second metal layer M2 to the length of the microstrip line conductor strip corresponding to the first metal layer M1 and the third metal layer M3 is larger, the more resonance frequency points are generated, the more frequency points capable of measuring the dielectric constant of the measured solid/liquid/solid powder are generated, the more the result is abundant, the fourth metal layer M4 is a ground plate of the microstrip line, a cavity W filled with the measured material is arranged in the center of the second medium layer D2, the area size of an XOY surface of the cavity W is smaller than the area of the second metal layer M2, and the measured material in the cavity W is solid or liquid or solid powder.
The measuring device can be used for measuring the dielectric constant of the measured material S under different bias voltages and can also be used for measuring the dielectric constant of a plurality of frequency points of the measured material S within 0GHz-20 GHz.
When the measured material is solid or liquid or solid powder, the dielectric constant of W when the measured material is solid or liquid or solid powder is given according to the S parameter of a specific vector network analyzer and the specific numerical value of the S parameter fitted by the HFSS, so that the multi-frequency-point dielectric constant measuring device is realized.
When the material to be measured is a material with dielectric anisotropy, firstly, a vector network analyzer is used for measuring an S1 parameter of the device under the condition of not applying external bias voltage, the dielectric constant 1 of the material to be measured corresponding to the S1 parameter is fitted through electromagnetic simulation software HFSS, so that the dielectric constant 1 of the material to be measured under the condition of not applying power is deduced, then, direct current bias voltage is applied between the first metal layer M1 and the second metal layer M2, a vector network analyzer is used for measuring an S2 parameter of the device under the condition of applying external bias voltage, electromagnetic simulation software HFSS is used for fitting the dielectric constant 2 of the material to be measured corresponding to the S2 parameter, so that the dielectric constant 2 of the material to be measured under the condition of applying external bias voltage is deduced, and finally the dielectric constant corresponding to the material with dielectric anisotropy under the condition of different bias voltages can be obtained.
When the detected material is a liquid crystal material, firstly, an orientation film is arranged on the surface of the second metal layer M2 or the fourth metal layer M4 to change the liquid crystal molecular orientation, then a vector network analyzer is used for measuring S1 parameters, the dielectric constant 1 of the liquid crystal corresponding to the S1 parameters is fitted through electromagnetic simulation software HFSS, so that the dielectric constant 1 corresponding to the molecular orientation of the liquid crystal at the moment is deduced, then, direct current bias voltage is applied between the first metal layer M1 and the second metal layer M2, so that the liquid crystal molecular orientation is parallel to the direction of the direct current bias voltage, the S2 parameters of the device at the moment are measured through the vector network analyzer, the dielectric constant 2 of the liquid crystal corresponding to the S2 parameters is fitted through the electromagnetic simulation software HFSS, so that the dielectric constant 2 corresponding to the liquid crystal molecules when the liquid crystal molecules are parallel to the applied bias voltage phase is deduced, and finally the dielectric constants corresponding to the liquid crystal molecules in different orientation directions can be obtained.
The above description is only an embodiment of the present invention, and is not intended to limit the present invention. Various modifications and alterations to this invention will become apparent to those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention should be included in the scope of the claims of the present invention.
Claims (8)
1. The utility model provides a multifrequency point dielectric constant measuring device based on ladder impedance resonance structure, measuring device includes first dielectric layer (D1), second dielectric layer (D2) and third dielectric layer (D3) from top to bottom, its characterized in that: a first metal layer (M1), a second metal layer (M2) and a third metal layer (M3) are etched on the lower surface of the first dielectric layer (D1), a fourth metal layer (M4) is etched on the upper surface of the third dielectric layer (D3), a cavity (W) filled with a material to be measured is arranged in the center of the second dielectric layer (D2), the cavity (W) is centrosymmetric, the impedance values corresponding to the first metal layer (M1), the second metal layer (M2) and the third metal layer (M3) are respectively Z1, Z2 and Z3, the electrical lengths are respectively q1, q2 and q3, and the formulas of Z1/Z2= tan (q 1) · (q 2/2) and Z3/Z2= tan (q 3) · (q 2/2) are required to be met.
2. The apparatus of claim 1, wherein the multi-frequency-point dielectric constant measuring device comprises: the size of the area of the XOY surface of the cavity (W) is smaller than the area of the second metal layer (M2).
3. The apparatus of claim 1, wherein the multi-frequency-point dielectric constant measuring device comprises: the material to be measured in the cavity (W) is liquid or solid powder.
4. The apparatus of claim 1, wherein the multi-frequency-point dielectric constant measuring device comprises: the first metal layer (M1), the second metal layer (M2) and the third metal layer (M3) are conductor strips of microstrip lines of different impedances.
5. The apparatus of claim 1, wherein the multi-frequency-point dielectric constant measuring device comprises: the ratio of the length of the microstrip line conductor strip corresponding to the second metal layer (M2) to the length of the microstrip line conductor strip corresponding to the first metal layer (M1) and the third metal layer (M3) is larger, the more resonance frequency points are generated, the more frequency points can be used for measuring the dielectric constant of the measured solid/liquid/solid powder, and the richer results are obtained.
6. The apparatus of claim 1, wherein the multi-frequency-point dielectric constant measuring device comprises: the fourth metal layer (M4) is a grounding plate of the microstrip line.
7. The multi-frequency-point dielectric-constant measuring device of any one of claims 1-6, wherein: the measuring device can be used for measuring the dielectric constant of the dielectric anisotropic material under different bias voltages.
8. The multi-frequency point dielectric constant measuring device based on the stepped impedance resonant structure as recited in any one of claims 1 to 6, wherein: the measuring device can be used for measuring the dielectric constants of a plurality of frequency points of the material S to be measured within 0GHz-20 GHz.
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| US10309909B2 (en) * | 2015-11-10 | 2019-06-04 | United Arab Emirates University | Dielectric constant detection method and device using anomalous phase dispersion |
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| CN111426885A (en) * | 2019-01-09 | 2020-07-17 | 华北电力大学（保定） | CSRR microstrip resonance sensor for measuring complex dielectric constant and application thereof |
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| CN110531164B (en) * | 2019-08-20 | 2022-05-13 | 杭州电子科技大学 | Microwave sensor for measuring dielectric constant based on SIW-CSRR |
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